CN1389597A - High-strength and high-conductivity nanometer crystal copper material and its prepn. - Google Patents
High-strength and high-conductivity nanometer crystal copper material and its prepn. Download PDFInfo
- Publication number
- CN1389597A CN1389597A CN01114026A CN01114026A CN1389597A CN 1389597 A CN1389597 A CN 1389597A CN 01114026 A CN01114026 A CN 01114026A CN 01114026 A CN01114026 A CN 01114026A CN 1389597 A CN1389597 A CN 1389597A
- Authority
- CN
- China
- Prior art keywords
- strength
- nanocrystalline
- conductivity
- purity
- copper material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010949 copper Substances 0.000 title claims abstract description 108
- 239000000463 material Substances 0.000 title claims abstract description 77
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 56
- 239000013078 crystal Substances 0.000 title claims description 7
- 238000002360 preparation method Methods 0.000 claims abstract description 18
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 20
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 239000007864 aqueous solution Substances 0.000 claims description 10
- 238000005868 electrolysis reaction Methods 0.000 claims description 10
- 239000003792 electrolyte Substances 0.000 claims description 8
- 108010010803 Gelatin Proteins 0.000 claims description 6
- 229920000159 gelatin Polymers 0.000 claims description 6
- 239000008273 gelatin Substances 0.000 claims description 6
- 235000019322 gelatine Nutrition 0.000 claims description 6
- 235000011852 gelatine desserts Nutrition 0.000 claims description 6
- 239000011780 sodium chloride Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 5
- 239000012153 distilled water Substances 0.000 claims description 5
- 239000000243 solution Substances 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 4
- 239000002159 nanocrystal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 238000005096 rolling process Methods 0.000 description 13
- 239000007769 metal material Substances 0.000 description 5
- 239000002086 nanomaterial Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000002707 nanocrystalline material Substances 0.000 description 3
- 238000005482 strain hardening Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 238000005097 cold rolling Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000009864 tensile test Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- -1 ferrous metals Chemical class 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000001239 high-resolution electron microscopy Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000013535 sea water Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
Landscapes
- Electrolytic Production Of Metals (AREA)
Abstract
一种高强度高导电性纳米晶体铜材料,密度为8.91±0.03g/cm3,纯度达99.995±0.003wt%,晶粒尺寸5~80nm,电导率g达80~99%LACS,断裂强度达200~600MPa,晶粒之间的取向差为1~35°,变形量为0~5100%;其制备方法:1)利用电解沉积技术制备三维块状纳米晶体铜材料;2)制备高强度高导电性纳米晶体铜材料:将上述电解沉积纳米金属铜材料在室温下冷轧,变形速率为1×10-3~1×10-2/s。它具有高强度又有高导电性。A high-strength and high-conductivity nanocrystalline copper material with a density of 8.91±0.03g/cm 3 , a purity of 99.995±0.003wt%, a grain size of 5-80nm, a conductivity g of 80-99%LACS, and a fracture strength of 200~600MPa, the orientation difference between grains is 1~35°, and the deformation is 0~5100%; its preparation method: 1) prepare three-dimensional block nanocrystalline copper material by electrolytic deposition technology; 2) prepare high strength and high Conductive nano-crystalline copper material: cold-roll the above-mentioned electrodeposited nano-metal copper material at room temperature, with a deformation rate of 1×10 −3 to 1×10 −2 /s. It has high strength and high conductivity.
Description
本发明涉及纳米晶体金属材料,具体地说是一种高强度高导电性纳米晶体铜材料及制备方法。The invention relates to a nanocrystalline metal material, in particular to a high-strength and high-conductivity nanocrystalline copper material and a preparation method thereof.
铜及其合金是人类应用最早和最广的一种有色金属。我国是应用铜合金最早的国家之一,远在3700多年前的殷周时代就开始使用青铜制造钟鼎和武器,直到现在,铜及其合金仍是应用最广的金属材料。铜及其合金的主要特点是导电,导热性好(纯铜的导电,导热性在所有的金属材料中仅次于银(Ag)而居第二位),在大气,海水和许多介质中抗腐蚀性好,并有很好的塑性和耐磨性,适用于各种塑性加工和铸造方法生产的各种产品,是电力,电工,热工,化工,仪表,造船和机械制造等工业部门不可缺少的金属材料。Copper and its alloys are the earliest and most widely used non-ferrous metals. my country is one of the earliest countries to use copper alloys. Bronze was used to make bells, tripods and weapons as far back as the Yin and Zhou Dynasties more than 3,700 years ago. Until now, copper and its alloys are still the most widely used metal materials. The main characteristics of copper and its alloys are electrical conductivity and good thermal conductivity (the electrical conductivity and thermal conductivity of pure copper are second only to silver (Ag) among all metal materials), and they are resistant to air, seawater and many media. It has good corrosion resistance, good plasticity and wear resistance, and is suitable for various products produced by various plastic processing and casting methods. Missing metal material.
对于纯铜,它具有很高的变形能力,强度较低。因此,为了改善铜材料的性能,往往需要添加一些危害较小的合金元素(如Al,Fe,Ni,Sn,Cd,Zn,Ag,Sb等)以提高其强度和硬度。但是,这些合金元素的加入往往会使铜的导电性大幅度下降;另外,少量Fe和Ni对Cu的磁性有影响,对制造罗盘和航空仪器不利;Cd,Zn,Sn,Pb等在高温高真空中易挥发,制造电子管零件时受到限制。For pure copper, it has high deformability and low strength. Therefore, in order to improve the performance of copper materials, it is often necessary to add some less harmful alloying elements (such as Al, Fe, Ni, Sn, Cd, Zn, Ag, Sb, etc.) to improve its strength and hardness. However, the addition of these alloying elements tends to greatly reduce the conductivity of copper; in addition, a small amount of Fe and Ni have an impact on the magnetic properties of Cu, which is not good for the manufacture of compass and aviation instruments; Cd, Zn, Sn, Pb, etc. It is volatile in vacuum and is limited in the manufacture of electronic tube parts.
在当今的现代科学领域中,机械设备,工具器械和仪器仪表装置都在向高速度、高效率、高灵敏度、低能耗、微型化方向发展,因而无论是从精度、可靠性还是高综合性能方面都对铜材料提出了更高的综合要求。例如,在迅速发展的计算机行业,汽车工业领域、无线通讯业(如手提电话的插塞连接器及锂电池阳极等)、印刷业(如多层印制电路板和高密度印制电路板的制做等)等等高技术产品中,对新型高性能铜材料的需求也越来越高,往往在要求铜材料在具有高导电性的同时还具有高强度,高热稳定性和高的耐磨性。In today's modern scientific field, mechanical equipment, tools and instruments are all developing towards high speed, high efficiency, high sensitivity, low energy consumption, and miniaturization. Both put forward higher comprehensive requirements for copper materials. For example, in the rapidly developing computer industry, the automotive industry, the wireless communication industry (such as plug connectors for mobile phones and lithium battery anodes, etc.), the printing industry (such as multilayer printed circuit boards and high-density printed circuit boards) Manufacturing, etc.) and other high-tech products, the demand for new high-performance copper materials is also increasing, and copper materials are often required to have high strength, high thermal stability and high wear resistance while having high conductivity. sex.
纳米晶体材料是指由极细晶粒组成,特征维度尺寸在1~100纳米范围内的一类单相或多相固体材料。由于其极细小的晶粒和大量的界面密度及大量处于晶界和晶粒内的缺陷原子,纳米材料在物理化学性能上表现出与普通微米级多晶体材料巨大的差异,具有奇特的力学,电学,磁学,光学,热学及化学等诸多方面的性能。其晶粒大小是影响传统金属多晶体材料(晶粒尺寸在微米量级)力学性能的重要因素,随晶粒减小,材料的强度和硬度大幅度增大。早期测试一些纳米材料的硬度结果表明,随晶粒减小,单质纳米金属材料的硬度确实升高了(如Fe,Cu等)。与此同时,人们也发现由于纳米材料中的晶界体积百分比很高,晶界对电子的传导有一定的阻碍作用,因此,纳米材料的电导率较普通粗晶体材料小,并且晶粒尺寸越小,电导率下降越大。近期研究结果表明,无论是纳米材料的硬度/强度,还是其电导率都与材料本身的结构特征(如界面结构、微观应变)、应力状态及材料致密度等有着密切的关系。不同的制备与处理方法获得的同成分材料中,即使晶粒尺寸相同,也可表现出截然不同的力学性能和电学性能。据此,可以预测如果将某种材料的晶粒尺寸减小到纳米量级,并且能够控制其微观结构,则有可能获得既有高强度又有高导电性的新型高技术性能的“理想”材料。Nanocrystalline materials refer to a class of single-phase or multi-phase solid materials composed of extremely fine grains with characteristic dimensions ranging from 1 to 100 nanometers. Due to its extremely fine grains, large interface density and a large number of defective atoms in grain boundaries and grains, nanomaterials show huge differences in physical and chemical properties from ordinary micron-scale polycrystalline materials, and have peculiar mechanics. Electrical, magnetic, optical, thermal and chemical properties. The grain size is an important factor affecting the mechanical properties of traditional metal polycrystalline materials (grain size is on the order of microns). As the grain size decreases, the strength and hardness of the material increase greatly. Early tests on the hardness of some nano-materials showed that the hardness of single nano-metal materials did increase (such as Fe, Cu, etc.) as the grain size decreased. At the same time, people have also found that due to the high volume percentage of grain boundaries in nanomaterials, the grain boundaries have a certain hindering effect on the conduction of electrons. Therefore, the conductivity of nanomaterials is smaller than that of ordinary coarse crystal materials, and the larger the grain size The smaller the value, the greater the drop in conductivity. Recent research results show that both the hardness/strength and electrical conductivity of nanomaterials are closely related to the structural characteristics of the material itself (such as interface structure, microscopic strain), stress state, and material density. Materials with the same composition obtained by different preparation and processing methods can exhibit completely different mechanical and electrical properties even if the grain size is the same. Accordingly, it can be predicted that if the grain size of a certain material is reduced to the nanometer level, and its microstructure can be controlled, it is possible to obtain the "ideal" of new high-tech performances with both high strength and high conductivity. Material.
俄罗斯科学家R.Z.Valiev利用严重塑性变形法获得了亚微米级的纯铜材料。严重塑性变形法是通过严重塑性变形使材料产生剧烈塑性变形,导致位错增殖,运动,重排等一系列过程,从而使得材料中晶粒不断细化至亚微米量级甚至纳米量级,而且样品中不含有孔洞类缺陷,晶界洁净,缺点是样品中有较大的残余应力,室温下的电阻较大。Russian scientist R.Z.Valiev obtained submicron pure copper material by severe plastic deformation method. The severe plastic deformation method is to cause severe plastic deformation of the material through severe plastic deformation, resulting in a series of processes such as dislocation proliferation, movement, rearrangement, etc., so that the grains in the material are continuously refined to the submicron or even nanometer level, and The sample does not contain hole defects, and the grain boundary is clean. The disadvantage is that there is a large residual stress in the sample, and the resistance at room temperature is large.
目前国内生产手机用锂电池所使用的优质铜膜(通常要求有较高的强度同时有较小的电阻)一般大都是进口铜箔,分别为沉积态和轧制态。这种铜箔的厚度大约为15~20μm。其中轧制态铜箔的室温拉伸强度为175MPa,延伸率约为1%,室温电阻率为ρ=2.05×10-8Ωm(相当于电导率g=82%IACS,其中IACS为International annealed copper standard缩写)。沉积态铜箔的室温断裂强度为120MPa,延伸率约为5%,室温电阻率为ρ=1.96×10-8Ωm(相当于电导率g=86%IACS)。At present, the high-quality copper films used in domestic production of lithium batteries for mobile phones (usually requiring high strength and low resistance) are generally imported copper foils, which are deposited and rolled. The thickness of this copper foil is about 15-20 μm. Among them, the room temperature tensile strength of rolled copper foil is 175MPa, the elongation is about 1%, and the room temperature resistivity is ρ=2.05×10 -8 Ωm (equivalent to conductivity g=82% IACS, where IACS is International annealed copper standard abbreviation). The room temperature fracture strength of the as-deposited copper foil is 120 MPa, the elongation is about 5%, and the room temperature resistivity is ρ=1.96×10 -8 Ωm (equivalent to conductivity g=86% IACS).
本发明的目的是提供一种既有高强度又有高导电性的纳米晶体铜材料及制备方法。The purpose of the present invention is to provide a nanocrystalline copper material with high strength and high conductivity and a preparation method.
为了实现上述目的,本发明的技术方案是:In order to achieve the above object, technical scheme of the present invention is:
一种高强度高导电性纳米晶体铜材料,具有如下性质:密度为8.91±0.03g/cm3,纯度可达99.995±0.003wt%,晶粒尺寸5~80nm,电导率g达80~99%IACS,断裂强度达200~600MPa,晶粒之间的取向差为1~35°,变形量为0~5100%;A high-strength and high-conductivity nanocrystalline copper material has the following properties: a density of 8.91±0.03g/cm 3 , a purity of 99.995±0.003wt%, a grain size of 5-80nm, and an electrical conductivity g of 80-99% IACS, the fracture strength is 200-600MPa, the orientation difference between grains is 1-35°, and the deformation is 0-5100%;
所述高强度高导电性纳米晶体铜材料的制备方法,分两步进行:The preparation method of the high-strength and high-conductivity nanocrystalline copper material is carried out in two steps:
1)利用电解沉积技术制备三维块状纳米晶体铜材料:电解液用电子纯级高纯度硫酸铜CuSO4溶液,加配高纯度离子交换水或高纯度蒸馏水,酸度为0.7~1.2mol/l;阴、阳极:阳极为纯度高于99.99%的纯铜板,阴极为严格打磨抛光处理的钛板;添加剂成分:5~25%浓度的明胶水溶液0.02~0.15ml/l,5~25%浓度的高纯NaCl水溶液0.2~1.0ml/l;电解工艺参数:电流密度为5.50~60mA/cm2,槽电压为0.2~1.0V,阴极,阳极极距为30~300mm,电解温度为15~30℃;1) Preparation of three-dimensional block nanocrystalline copper materials by electrolytic deposition technology: Electron-grade high-purity copper sulfate CuSO 4 solution is used as the electrolyte, and high-purity ion-exchanged water or high-purity distilled water is added, and the acidity is 0.7-1.2mol/l; 1. Anode: The anode is a pure copper plate with a purity higher than 99.99%, and the cathode is a strictly polished titanium plate; additive components: 5-25% gelatin aqueous solution 0.02-0.15ml/l, 5-25% high-purity NaCl aqueous solution 0.2~1.0ml/l; electrolysis process parameters: current density 5.50~60mA/cm 2 , cell voltage 0.2~1.0V, cathode and
2)制备高强度高导电性纳米晶体铜材料:将上述电解沉积纳米金属铜材料在室温下冷轧,变形速率为1×10-3~1×10-2/s,制得纯度为99.995±0.003wt%、密度为8.91±0.03g/cm3、电导率g为80~99%IACS、断裂强度为200~600MPa、晶粒之间取向差为1~35°、变形量为0~5100%的铜材料。2) Preparation of high-strength and high-conductivity nanocrystalline copper material: cold-roll the above electrolytically deposited nano-metallic copper material at room temperature, with a deformation rate of 1×10 -3 to 1×10 -2 /s, and a purity of 99.995± 0.003wt%, density of 8.91±0.03g/cm 3 , conductivity g of 80-99% IACS, fracture strength of 200-600MPa, misorientation between grains of 1-35°, deformation of 0-5100% copper material.
本发明具有如下优点:The present invention has the following advantages:
1.具有高强度、高导电性。本发明方法,利用电解沉积技术中合理的工艺过程和工艺参数制备出高纯度、高致密度、低微观应变的块状纳米晶体Cu材料(晶粒尺寸为30nm,1nm=10-9m),该纳米晶体Cu材料在室温(仅为0.22Tm,Tm为材料的熔点温度)的断裂强度为210MPa,电阻率为ρ=1.72*10-8Ωm(相当于电导率g=99%IACS);轧制态纳米晶体Cu箔的室温断裂强度会大幅度提高(可高达600MPa),而室温电阻的变化却不十分明显,仍具有较好的导电性(电导率g=80~99%IACS),此强度和电导率值与目前市场上所用相同成分的材料相比均有大幅度的提高。另外,轧制变形时,不同变形量的纳米Cu箔材料,随变形量的增加(0~1000%),材料的断裂强度不断从200MPa增加到500MPa,相应的电导率从g=99%IACS下降为g=80%IACS。继续增加变形量,材料的强度和电阻均无明显变化。1. It has high strength and high conductivity. The method of the present invention utilizes reasonable process and process parameters in the electrolytic deposition technology to prepare block nanocrystalline Cu materials with high purity, high density and low microscopic strain (grain size is 30nm, 1nm= 10-9 m), The fracture strength of the nanocrystalline Cu material at room temperature (only 0.22T m , where T m is the melting point of the material) is 210 MPa, and the resistivity is ρ=1.72*10 -8 Ωm (equivalent to conductivity g=99% IACS) ; The room temperature fracture strength of rolled nanocrystalline Cu foil will be greatly improved (up to 600MPa), but the room temperature resistance change is not very obvious, and it still has good conductivity (conductivity g=80~99%IACS) , the strength and conductivity values are greatly improved compared with the materials of the same composition currently on the market. In addition, when rolling deformation, the nano-Cu foil materials with different deformations, with the increase of deformation (0-1000%), the breaking strength of the material continuously increases from 200MPa to 500MPa, and the corresponding electrical conductivity decreases from g=99%IACS It is g=80% IACS. Continue to increase the amount of deformation, the strength and resistance of the material have no significant change.
2.具有较高超塑延伸性。本发明利用电解沉积技术,在合理的工艺条件下获得高致密块状纳米晶体Cu材料在室温(仅为0.22Tm,Tm为材料的熔点温度)的断裂强度为210MPa,经室温下轧制获得延伸率高达5000%的纳米晶Cu箔材料,其厚度可达轧辊的极限厚度(小至微米量级)。2. High superplastic extensibility. The present invention utilizes electrolytic deposition technology to obtain a high-density block nanocrystalline Cu material at room temperature (only 0.22T m , T m is the melting point temperature of the material) with a fracture strength of 210MPa under reasonable process conditions. After rolling at room temperature A nanocrystalline Cu foil material with an elongation rate as high as 5000% is obtained, and its thickness can reach the limit thickness of the roll (as small as the order of microns).
3.应用性强。由于本发明在轧制变形时,不同变形量的纳米Cu箔材料,随变形量的增加(0~1000%),材料的断裂强度不断从200MPa增加到500MPa,相应的电导率从g=99%IACS下降为g=80%IACS,继续增加变形量,材料的强度和电阻均无明显变化。所以,采用本发明方法获得的高强度高导电性纳米晶体铜材料在实际使用时,可根据需求确定变形量以同时满足高强度和高导电性的需要。这种具有高强度,高导电性的纳米晶体Cu材料对迅速发展的计算机行业及无线通讯业及印刷业的发展具有重要的价值。3. Strong applicability. Because the present invention is rolling deformation, the nano-Cu foil material of different deformation, along with the increase of deformation (0~1000%), the breaking strength of material constantly increases from 200MPa to 500MPa, and corresponding electrical conductivity is from g=99% The IACS drops to g=80%IACS, and the deformation continues to increase, but the strength and electrical resistance of the material do not change significantly. Therefore, when the high-strength and high-conductivity nanocrystalline copper material obtained by the method of the present invention is actually used, the amount of deformation can be determined according to requirements to meet the requirements of high strength and high conductivity at the same time. This nanocrystalline Cu material with high strength and high conductivity is of great value to the rapidly developing computer industry, wireless communication industry and printing industry.
4.制备方法简单。采用本发明方法,在室温下轧制,无加工硬化效应,无需退火过程。4. The preparation method is simple. Adopting the method of the invention, rolling at room temperature has no work hardening effect and no annealing process.
图1为电解沉积纳米晶体Cu室温拉伸的真应力-真应变曲线。Figure 1 is the true stress-true strain curve of electrodeposited nanocrystalline Cu stretched at room temperature.
图2为电解沉积纳米晶体Cu不同拉伸速率时的真应力-真应变曲线(室温)。Fig. 2 is the true stress-true strain curve (room temperature) of electrodeposited nanocrystalline Cu at different stretching rates.
图3为室温条件下,不同变形量的轧制态纳米晶体Cu样品的宏观照片。Fig. 3 is a macroscopic photo of rolled nanocrystalline Cu samples with different deformations at room temperature.
图4为电解沉积纳米晶体Cu和轧制态纳米晶体Cu箔(变形量为1400%)室温拉伸应力-应变曲线。Fig. 4 is the tensile stress-strain curve at room temperature of electrodeposited nanocrystalline Cu and as-rolled nanocrystalline Cu foil (deformation amount is 1400%).
图5为电解沉积纳米晶体Cu和不同变形量的轧制态纳米晶体Cu的电阻率随温度的变化曲线。Fig. 5 is the resistivity curve of electrodeposited nano-crystal Cu and rolled nano-crystal Cu with different deformations as a function of temperature.
下面结合附图和实施例详述本发明。The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.
实施例1Example 1
1.利用电解沉积技术制备三维块状纳米晶体Cu材料:1. Preparation of three-dimensional bulk nanocrystalline Cu materials by electrolytic deposition technology:
电解沉积设备:双脉冲电解沉积设备Electrolytic deposition equipment: double pulse electrolytic deposition equipment
电解沉积所用电解液要求:电子纯级CuSO4溶液,严格控制电解液中重金属杂质含量,配电解液所用水应为高纯度离子交换水或高纯度蒸溜水,电解液酸度为:1.0mol/l。Requirements for the electrolyte used in electrolytic deposition: electronically pure grade CuSO 4 solution, strictly control the content of heavy metal impurities in the electrolyte, the water used for distributing the electrolyte should be high-purity ion-exchanged water or high-purity distilled water, and the acidity of the electrolyte is: 1.0mol/ l.
阴,阳极要求:阳极为纯度高于99.99%的纯铜板,阴极为严格打磨抛光处理的纯钛板。Cathode and anode requirements: the anode is a pure copper plate with a purity higher than 99.99%, and the cathode is a pure titanium plate that has been strictly ground and polished.
添加剂成分:明胶:0.1ml/l(15%浓度的明胶水溶液)Additive ingredients: gelatin: 0.1ml/l (15% gelatin aqueous solution)
高纯NaCl:0.6ml/l(15%浓度的NaCl水溶液) High-purity NaCl: 0.6ml/l (15% NaCl aqueous solution)
电解工艺参数:电流密度:30mA/cm2 Electrolysis process parameters: current density: 30mA/cm 2
槽电压:0.6VSlot voltage: 0.6V
阴极,阳极极距:150mmCathode, anode distance: 150mm
电解温度:20℃ Electrolysis temperature: 20°C
制备出高纯度、高致密度、低微观应变的块状纳米晶体Cu材料(晶粒尺寸为30nm,1nm=10-9m),该纳米晶体Cu材料在室温(仅为0.22Tm,Tm为材料的熔点温度)的断裂强度为210MPa,电阻率为ρ=1.72*10-8Ωm(相当于电导率g=99%IACS)。A bulk nanocrystalline Cu material with high purity, high density, and low microscopic strain (grain size is 30nm, 1nm=10 -9 m) is prepared, and the nanocrystalline Cu material is at room temperature (only 0.22T m is the melting point temperature of the material), the breaking strength is 210 MPa, and the resistivity is ρ=1.72*10 -8 Ωm (corresponding to the electrical conductivity g=99% IACS).
化学分析结果表明,沉积态纳米Cu样品的纯度为99.995wt%。微量杂质化学成分含量如下表所示:The results of chemical analysis showed that the purity of the deposited nano-Cu sample was 99.995wt%. The chemical composition content of trace impurities is shown in the table below:
元素 微含量(%) 元素 微含量(%)Element Trace Content (%) Element Trace Content (%)
Bi <0.0001 Sn <0.0001Bi <0.0001 Sn <0.0001
Sb 0.0001 Ag 0.0001Sb 0.0001 Ag 0.0001
As 0.0001 Co 0.0001As 0.0001 Co 0.0001
Pb 0.0001 Zn 0.0002Pb 0.0001 Zn 0.0002
Fe 0.0004 Ni 0.0002Fe 0.0004 Ni 0.0002
利用LECO TC-436氧/氮分析仪测定,样品中氧含量为24±1ppm。用Archimedes原理测量样品密度为8.91±0.03g/cm3,相当于多晶体纯Cu理论密度(8.96g/cm3)的99.4%。正电子湮灭谱实验结果表明,样品中既不包含空位团尺寸的缺陷也无大孔隙,这进一步证明了纳米晶Cu样品的高密致度性。X-射线衍射结果表明电解沉积纳米晶体Cu的平均晶粒尺寸约为30nm,样品中的微观应变很小,仅有0.03%。高分辨电子显微镜观察纳米晶体Cu的晶粒尺寸在几纳米到80纳米之间分布,平均晶粒尺寸为20nm。同时还发现大多数纳米晶颗粒之间的晶粒取向差都属于小角度晶界,一般都在1~10°之间,样品中的位错密度也很小。Using LECO TC-436 oxygen/nitrogen analyzer to measure, the oxygen content in the sample is 24±1ppm. The sample density measured by Archimedes principle is 8.91±0.03g/cm 3 , which is equivalent to 99.4% of the theoretical density (8.96g/cm 3 ) of polycrystalline pure Cu. The results of positron annihilation spectroscopy experiments show that the sample contains neither vacancy-sized defects nor large pores, which further proves the high density of nanocrystalline Cu samples. X-ray diffraction results show that the average grain size of electrodeposited nanocrystalline Cu is about 30nm, and the microscopic strain in the sample is very small, only 0.03%. High-resolution electron microscopy observed that the grain size of nanocrystalline Cu was distributed between several nanometers and 80 nanometers, and the average grain size was 20nm. At the same time, it is also found that the grain orientation difference between most nanocrystalline particles belongs to the small-angle grain boundary, generally between 1° and 10°, and the dislocation density in the sample is also very small.
电解沉积纳米晶体铜的室温拉伸:图1所示为电解沉积纳米晶体Cu样品室温下的真应力-应变曲线,从图中可以看出,当拉伸速率为1×10-4s-1时,电解沉积纳米晶体Cu的屈服强度σ0.2=119±5MPa,断裂强度σb=202±8MPa,更重要的是电解沉积纳米晶体Cu样品具有很好的的塑性,延伸率可达30%。Room temperature stretching of electrolytically deposited nanocrystalline copper: Figure 1 shows the true stress-strain curve of electrolytically deposited nanocrystalline Cu samples at room temperature. It can be seen from the figure that when the stretching rate is 1×10 -4 s -1 , the yield strength σ 0.2 of electrolytically deposited nanocrystalline Cu = 119±5MPa, and the breaking strength σb = 202±8MPa. More importantly, the electrolytically deposited nanocrystalline Cu sample has good plasticity, and the elongation can reach 30%.
电解沉积纳米晶体Cu在不同拉伸速率下的室温拉伸:图2所示为电解沉积纳米晶体Cu样品在室温下以不同拉伸速率(6×10-5~1.8×103s-1)拉伸实验的真应力-应变曲线。可以看出,电解沉积纳米晶体Cu的强度和塑性随拉伸速率的不同有明显的变化趋势:当拉伸速率从6×10-5s-1增加到1.8×103s-1,样品的屈服强度从72MPa增加到122MPa,而其断裂强度从156MPa增加到了292MPa,与此同时,材料的真应变也从15%增加到了33%(这种无论是拉伸强度还是真应变都随拉伸速率的增加而增加的现象是与普通粗晶体Cu材料随拉伸速率的变化趋势是截然不同的)。在更高的动态冲击拉伸实验中(拉伸速率为1.8×103s-1),电解沉积纳米晶体Cu的断裂强度可高达600MPa,延伸率高达55%。Room temperature stretching of electrolytically deposited nanocrystalline Cu samples at different stretching rates: Figure 2 shows the electrolytically deposited nanocrystalline Cu samples at room temperature at different stretching rates (6×10 -5 ~1.8×10 3 s -1 ) True stress-strain curves for tensile experiments. It can be seen that the strength and plasticity of electrodeposited nanocrystalline Cu have a clear trend of change with different stretching rates: when the stretching rate increases from 6×10 -5 s -1 to 1.8×10 3 s -1 , the The yield strength increased from 72MPa to 122MPa, and its fracture strength increased from 156MPa to 292MPa. At the same time, the true strain of the material also increased from 15% to 33% (this is whether the tensile strength or the true strain increases with the tensile rate. The phenomenon of the increase of the increase is completely different from the change trend of the ordinary coarse crystal Cu material with the stretching rate). In the higher dynamic impact tensile test (stretching rate of 1.8×10 3 s -1 ), the fracture strength of electrodeposited nanocrystalline Cu can be as high as 600MPa, and the elongation can be as high as 55%.
2.通过室温轧制获得高强度、高导电性的纳米体Cu材料(Cu线或Cu箔):2. Obtain high-strength, high-conductivity nanobody Cu material (Cu wire or Cu foil) by rolling at room temperature:
将所述电解沉积纳米金属Cu材料采用双辊轧辊设备,在室温条件下冷轧,其中变形量ε通过下式计算:ε=(δ0-δ)/δ,其中δ0和δ分别代表样品原始厚度和轧制完成时的厚度,变形速率为1×10-2/s。The electrodeposited nano-metallic Cu material is cold-rolled at room temperature using a two-roller roll equipment, wherein the amount of deformation ε is calculated by the following formula: ε=(δ 0 -δ)/δ, wherein δ 0 and δ represent the samples respectively The original thickness and the thickness at the completion of rolling, the deformation rate is 1×10 -2 /s.
将16mm×4mm×1mm、晶粒尺寸为30nm的一段电解沉积纳米晶体Cu样品在室温条件下冷轧,发现样品沿轧制方向长度不断增加,厚度方向尺寸不断减小,而样品宽度方向几乎不变(<5%)。经不断轧制,样品越来越长,最后纳米晶体Cu样品变成一条表面光滑四周无任何裂纹的薄膜条带,此时总变形量约为5100%,如图3所示,轧制结束时Cu膜样品厚度约为20μm(此为本轧机的极限厚度),进一步轧制仍可进行。制得纯度为99.995wt%、密度为8.91g/cm3、电导率g为80%IACS、断裂强度为500MPa、晶粒之间取向差为10~35°、变形量为700%的铜材料。A section of electrolytically deposited nanocrystalline Cu sample with a size of 16mm×4mm×1mm and a grain size of 30nm was cold-rolled at room temperature. change (<5%). After continuous rolling, the sample becomes longer and longer, and finally the nanocrystalline Cu sample becomes a film strip with a smooth surface and no cracks around it. At this time, the total deformation is about 5100%, as shown in Figure 3. At the end of rolling The thickness of the Cu film sample is about 20 μm (this is the limit thickness of this rolling mill), and further rolling can still be carried out. A copper material with a purity of 99.995wt%, a density of 8.91g/cm 3 , an electrical conductivity g of 80% IACS, a fracture strength of 500MPa, an orientation difference of 10-35° between crystal grains and a deformation of 700% was obtained.
X-射线衍射结果表明轧制态纳米晶体Cu的平均晶粒尺寸仍为30nm,样品中的微观应变增加到0.16%。高分辨电子显微镜观察冷轧后纳米晶体Cu样品的微观结构证明,在轧制过程中纳米晶体Cu样品中的晶粒大小的确未发生变化,但是在轧制态纳米晶体Cu样品中,位错密度(主要集中于晶界处)明显增加,晶粒与晶粒之间的取向差也明显增加了,统计结果表明,充分轧制后纳米晶体Cu样品中晶粒之间的取向差大约为10~35°,明显高于电解沉积态块状纳米晶体Cu样品中的晶粒取向差。X-ray diffraction results show that the average grain size of nanocrystalline Cu in the as-rolled state is still 30nm, and the microscopic strain in the sample increases to 0.16%. High-resolution electron microscope observation of the microstructure of nanocrystalline Cu samples after cold rolling proved that the grain size in the nanocrystalline Cu samples did not change during the rolling process, but in the as-rolled nanocrystalline Cu samples, the dislocation density (mainly concentrated at the grain boundary) increased significantly, and the orientation difference between the grains also increased significantly. The statistical results show that the orientation difference between the grains in the nanocrystalline Cu sample after full rolling is about 10~ 35°, significantly higher than the misorientation of grains in the electrodeposited bulk nanocrystalline Cu samples.
利用电解沉积技术,在合理的工艺条件下获得高致密块状纳米晶体Cu材料。该材料在室温下轧制时无加工硬化效应,无需退火过程既可在室温下获得延伸率高达5000%的纳米晶体Cu箔材料,其厚度可达轧辊的极限厚度(小至微米量级),在轧制过程中纳米晶体Cu膜中的晶粒尺寸保持不变,材料中也没有明显的加工硬化效应。轧制态纳米晶体Cu箔的室温断裂强度会大幅度提高(可高达600MPa),而室温电阻的变化却不十分明显,仍具有较好的导电性(电导率g=80%IACS),此强度和电导率值与目前市场上所用相同成分的材料相比均有大幅度的提高。Using electrolytic deposition technology, high-density bulk nanocrystalline Cu materials were obtained under reasonable process conditions. The material has no work hardening effect when rolled at room temperature, and nanocrystalline Cu foil material with an elongation rate of up to 5000% can be obtained at room temperature without an annealing process, and its thickness can reach the limit thickness of the roll (as small as microns), The grain size in the nanocrystalline Cu film remained unchanged during the rolling process, and there was no obvious work hardening effect in the material. The room temperature fracture strength of rolled nanocrystalline Cu foil will be greatly improved (up to 600MPa), but the room temperature resistance change is not very obvious, and it still has good conductivity (conductivity g=80%IACS), this strength Compared with the materials of the same composition currently on the market, both the conductivity and conductivity values have been greatly improved.
实施例2Example 2
与实施例1不同之处在于:The difference from Example 1 is:
1)利用电解沉积技术制备三维块状纳米晶体铜材料:电解液用电子纯级高纯度硫酸铜CuSO4溶液,加配高纯度离子交换水或高纯度蒸馏水,酸度为0.7mol/l;阴、阳极:阳极为纯度高于99.99%的纯铜板,阴极为严格打磨抛光处理的钛板;添加剂成分:5%浓度的明胶水溶液0.02ml/l,5%浓度的高纯NaCl水溶液0.2ml/l;电解工艺参数:电流密度为5.5mA/cm2,槽电压为0.2V,阴极,阳极极距为30mm,电解温度为15℃;1) Preparation of three-dimensional block nanocrystalline copper materials by electrolytic deposition technology: Electron-grade high-purity copper sulfate CuSO 4 solution is used as electrolyte, and high-purity ion-exchanged water or high-purity distilled water is added, with an acidity of 0.7mol/l; cathode and anode : The anode is a pure copper plate with a purity higher than 99.99%, and the cathode is a titanium plate that has been strictly polished and polished; additive ingredients: 5% concentration of gelatin aqueous solution 0.02ml/l, 5% concentration of high-purity NaCl aqueous solution 0.2ml/l; electrolysis Process parameters: current density is 5.5mA/cm 2 , cell voltage is 0.2V, distance between cathode and anode is 30mm, electrolysis temperature is 15℃;
2)制备高强度高导电性纳米晶体铜材料:将上述电解沉积纳米金属铜材料在室温下冷轧,变形速率为1×10-3/s,制得纯度为99.992wt%、密度为8.88g/cm3、电导率g为80%IACS、断裂强度为400MPa、晶粒之间取向差为8~30°、变形量为1400%的铜材料。2) Preparation of high-strength and high-conductivity nanocrystalline copper material: cold-roll the above electrolytically deposited nano-metallic copper material at room temperature with a deformation rate of 1×10 -3 /s to obtain a purity of 99.992wt% and a density of 8.88g /cm 3 , the electrical conductivity g is 80% IACS, the fracture strength is 400MPa, the misorientation between grains is 8-30°, and the deformation is 1400%.
轧制态纳米晶体Cu和电解沉积态纳米晶体Cu的拉伸性能比较:电解沉积纳米晶体Cu样品和变形量为1400%的轧制态纳米晶体Cu样品在室温下以相同的拉伸速率拉伸,其结果也不尽相同,如图4所示,轧制态的纳米晶体Cu箔的拉伸强度较沉积态大幅度提高,其屈服应力较沉积态增加了近3倍,从94MPa增加到380MPa,断裂应力也增加了1倍,高达400MPa。但从图中也可清楚的看出轧制态纳米晶体Cu箔的延伸率仅为1.7%,同沉积态纳米晶Cu相比,小了约一个量级。Comparison of tensile properties of as-rolled nanocrystalline Cu and electrodeposited nanocrystalline Cu: The electrodeposited nanocrystalline Cu sample and the as-rolled nanocrystalline Cu sample with a deformation of 1400% were stretched at the same tensile rate at room temperature , the results are not the same, as shown in Figure 4, the tensile strength of the rolled nanocrystalline Cu foil is greatly improved compared with the deposited state, and its yield stress is nearly three times higher than that of the deposited state, from 94MPa to 380MPa , the fracture stress also doubled, up to 400MPa. However, it can also be clearly seen from the figure that the elongation of the rolled nanocrystalline Cu foil is only 1.7%, which is about an order of magnitude smaller than that of the deposited nanocrystalline Cu foil.
轧制态纳米晶体Cu和电解沉积态纳米晶体Cu的低温电阻性能比较:图5所示为不同变形量的纳米晶体Cu材料的电阻率随温度的变化曲线。很明显,在一个给定的温度下,变形量越大,纳米晶体Cu的电阻率越大。如在273K时,电解沉积态纳米晶体Cu(ε=0%)的电阻率ρ=1.65×10-8Ωm,ε=450%的轧制态纳米晶体Cu箔的电阻率ρ=1.78×10-8Ωm,ε=800%的轧制态纳米晶体Cu箔的电阻率ρ=2.09×10-8Ωm,而当变形量超过1000%时,随变形量的增加,轧制态纳米晶体Cu箔的电阻率不再继续增加,而是基本保持为一恒定值,约为2.1×10-8Ωm。Comparison of the low-temperature resistance properties of rolled nanocrystalline Cu and electrodeposited nanocrystalline Cu: Figure 5 shows the resistivity curves of nanocrystalline Cu materials with different deformations as a function of temperature. It is obvious that at a given temperature, the greater the amount of deformation, the greater the resistivity of nanocrystalline Cu. For example, at 273K, the resistivity of electrodeposited nanocrystalline Cu (ε=0%) is ρ=1.65×10 -8 Ωm, and the resistivity of ε=450% rolled nanocrystalline Cu foil is ρ=1.78×10 - 8 Ωm, ε=800% as-rolled nanocrystalline Cu foil has a resistivity ρ=2.09×10 -8 Ωm, and when the deformation exceeds 1000%, with the increase of deformation, the resistivity of the as-rolled nanocrystalline Cu foil The resistivity does not continue to increase, but basically maintains a constant value, about 2.1×10 -8 Ωm.
实施例3Example 3
与实施例1不同之处在于:The difference from Example 1 is:
1)利用电解沉积技术制备三维块状纳米晶体铜材料:电解液用电子纯级高强度硫酸铜CuSO4溶液,加配高纯度离子交换水或高纯度蒸馏水,酸度为1.2mol/l;阴、阳极:阳极为纯度高于99.99%的纯铜板,阴极为严格打磨抛光处理的钛板;添加剂成分:25%浓度的明胶水溶液0.15ml/l,25%浓度的高纯NaCl水溶液1.0ml/l;电解工艺参数:电流密度为60mA/cm2,槽电压为1.0V,阴极,阳极极距为300mm,电解温度为30℃;1) Preparation of three-dimensional block nanocrystalline copper material by electrolytic deposition technology: Electron-grade high-strength copper sulfate CuSO 4 solution is used as electrolyte, and high-purity ion-exchanged water or high-purity distilled water is added, with an acidity of 1.2mol/l; cathode and anode : The anode is a pure copper plate with a purity higher than 99.99%, and the cathode is a strictly ground and polished titanium plate; additive components: 25% gelatin aqueous solution 0.15ml/l, 25% high-purity NaCl aqueous solution 1.0ml/l; electrolysis Process parameters: the current density is 60mA/cm 2 , the cell voltage is 1.0V, the distance between cathode and anode is 300mm, and the electrolysis temperature is 30°C;
2)制备高强度高导电性纳米晶体铜材料:将上述电解沉积纳米金属铜材料在室温下冷轧,变形速率为1×10-2/s,制得纯度为99.998wt%、密度为8.94g/cm3、电导率g为90%IACS、断裂强度为350MPa、晶粒之间取向差为5~20°、变形量为700%的铜材料。2) Preparation of high-strength and high-conductivity nanocrystalline copper material: cold-roll the above-mentioned electrolytically deposited nano-metallic copper material at room temperature with a deformation rate of 1×10 -2 /s to obtain a purity of 99.998wt% and a density of 8.94g /cm 3 , the electrical conductivity g is 90% IACS, the fracture strength is 350MPa, the misorientation between grains is 5-20°, and the deformation is 700%.
比较例1:普通退火态粗晶体纯铜(晶粒尺寸约为100μm)在室温下拉伸,其断裂极限强度σuts≤200MPa,屈服强度σy≤35MPa,延伸率δ≤60%。冷轧后的普通粗晶体纯铜的断裂强度和屈服强度分别可提高到290MPa和250MPa,其延伸率约为8%。因此,对于普通粗晶体纯铜(无论是退火态还是冷轧态)其极限断裂强度往往小于300MPa。Comparative Example 1: Coarse crystalline pure copper (grain size about 100 μm) in ordinary annealed state is stretched at room temperature, its fracture ultimate strength σ uts ≤ 200 MPa, yield strength σ y ≤ 35 MPa, and elongation δ ≤ 60%. The fracture strength and yield strength of ordinary coarse crystal pure copper after cold rolling can be increased to 290MPa and 250MPa respectively, and its elongation is about 8%. Therefore, for ordinary coarse crystal pure copper (whether it is annealed or cold-rolled), its ultimate fracture strength is often less than 300MPa.
比较例2:在同样的条件下冷轧普通粗晶纯Cu样品发现,当变形量大约为800%时,已有明显的裂纹产生。将30nm的纳米晶Cu样品在500℃真空条件下退火48小时,使其晶粒充分长大(晶粒尺寸大于100μm)。在相同的条件下冷轧退火态Cu样品,同样发现当变形量约为700%时,样品四周已有明显裂纹产生。通过以上实验对比可以排除纯度对样品室温塑性的影响。从而说明只有纳米晶体材料才有可能在室温条件下实现超塑延展性。Comparative Example 2: Under the same conditions, it was found that an ordinary coarse-grained pure Cu sample was cold-rolled, and when the deformation amount was about 800%, obvious cracks had already occurred. The 30nm nanocrystalline Cu sample was annealed at 500°C for 48 hours under vacuum conditions to make the grain grow sufficiently (grain size greater than 100 μm). The annealed Cu sample was cold-rolled under the same conditions, and it was also found that when the deformation was about 700%, there were obvious cracks around the sample. The influence of purity on room temperature plasticity of samples can be ruled out through the above experimental comparison. This shows that only nanocrystalline materials can achieve superplastic ductility at room temperature.
比较例3:美国科学家J.Weertman等人(P.G.Sanders,J.A.Eastman and J.R.Weertman,in Processing and Properties of Nanocrystalline Materials,C.Suryanarayana,J.Singh and F.H.Froes,Eds.(TMS,1996),p379)利用惰性气体冷凝法以及高真空(10-5~10-6Pa)原位加压技术(压力通常为1~5GPa),制备出平均晶粒尺寸在22~110nm的固体纳米晶体铜材料,样品的密度约为理论密度的96%,且样品中微观应变较大。室温静态拉伸实验结果表明,该纳米晶体铜材料的强度较普通粗晶体铜材料有较大幅度的提高,其断裂强度可高达415MPa~480MPa。样品的断裂强度与样品的制备工艺及平均晶粒尺寸有关系,(如晶粒尺寸越细小,其强度越高,晶粒尺寸越粗大,其强度较低),并且塑性随晶粒尺寸的减小而减小。利用超细粉冷压合成法制备的纳米晶体铜所体现出的这种高强度低塑性的现象与样品在制备过程中所引入的大量缺陷有关(如孔洞,污染,不完整晶界及较大的残余内应力等等)。Comparative Example 3: American scientists J.Weertman et al. (PGSanders, JAEastman and JRWeertman, in Processing and Properties of Nanocrystalline Materials, C.Suryanarayana, J.Singh and FHFroes, Eds. (TMS, 1996), p379) utilize inert gas condensation Method and high vacuum (10 -5 ~ 10 -6 Pa) in-situ pressurization technology (pressure is usually 1 ~ 5GPa), prepared solid nanocrystalline copper material with an average grain size of 22 ~ 110nm, the density of the sample is about 96% of the theoretical density, and the microscopic strain in the sample is relatively large. The results of the static tensile test at room temperature show that the strength of the nanocrystalline copper material is greatly improved compared with that of the common coarse crystalline copper material, and its fracture strength can be as high as 415MPa-480MPa. The fracture strength of the sample is related to the preparation process of the sample and the average grain size (for example, the finer the grain size, the higher the strength, the coarser the grain size, the lower the strength), and the plasticity increases with the decrease of the grain size. Small and reduced. The phenomenon of high strength and low plasticity of nanocrystalline copper prepared by ultrafine powder cold pressing synthesis is related to a large number of defects introduced in the sample preparation process (such as holes, pollution, incomplete grain boundaries and large residual internal stress, etc.).
比较例4:俄罗斯科学家R.Z.Valiev(R.K.Islamgaliev,P. Pekala,M.Pekalaand R.E.Valiev,Plys.Stat.Sol.(a) 162,559(1997))利用严重塑性变形法获得了亚微米级的纯铜材料,其平均晶粒尺寸为210nm,样品致密性较好,但残余很大。在室温下拉伸,其极限断裂强度可达500MPa,延伸率约为5%,这种材料室温下的电阻较大,电阻率为ρ=2.24×10-8Ωm(相当于电导率g=70%IACS)。Comparative example 4: Russian scientist RZValiev (RKIslamgaliev, P.Pekala, M.Pekalaand REValiev, Plys.Stat.Sol.(a) 162 , 559(1997)) obtained submicron pure copper material by severe plastic deformation method, Its average grain size is 210nm, and the sample has good compactness, but the residue is large. Stretched at room temperature, its ultimate breaking strength can reach 500MPa, and the elongation is about 5%. This material has a relatively high resistance at room temperature, and the resistivity is ρ=2.24×10 -8 Ωm (equivalent to conductivity g=70 %IACS).
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011140267A CN1181224C (en) | 2001-06-01 | 2001-06-01 | A preparation method of high-strength and high-conductivity nanocrystalline copper material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011140267A CN1181224C (en) | 2001-06-01 | 2001-06-01 | A preparation method of high-strength and high-conductivity nanocrystalline copper material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1389597A true CN1389597A (en) | 2003-01-08 |
| CN1181224C CN1181224C (en) | 2004-12-22 |
Family
ID=4660719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011140267A Expired - Lifetime CN1181224C (en) | 2001-06-01 | 2001-06-01 | A preparation method of high-strength and high-conductivity nanocrystalline copper material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1181224C (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004040042A1 (en) * | 2002-11-01 | 2004-05-13 | Institute Of Metal Research Chinese Academy Of Sciences | A nano icrystals copper material with super high strength and conductivity and method of preparing thereof |
| CN1320672C (en) * | 2005-07-25 | 2007-06-06 | 北京中科天华科技发展有限公司 | Nano-electrolytic copper foil suitable to lithium ion cell and preparation method |
| CN100553833C (en) * | 2008-01-14 | 2009-10-28 | 重庆大学 | The method for preparing metallic simple substance nano-crystal material |
| CN102031490A (en) * | 2010-12-30 | 2011-04-27 | 江苏大学 | High-strength high-conductivity nanocrystal copper material and preparation method thereof |
| CN105780066A (en) * | 2015-12-27 | 2016-07-20 | 佛山市领卓科技有限公司 | High-performance copper foil and preparation method thereof |
| CN105780065A (en) * | 2015-12-27 | 2016-07-20 | 佛山市领卓科技有限公司 | Electrolytic copper foil and preparation method thereof |
| CN105780064A (en) * | 2015-12-27 | 2016-07-20 | 佛山市领卓科技有限公司 | Copper foil for circuit board and preparation method thereof |
| CN105780052A (en) * | 2015-12-27 | 2016-07-20 | 佛山市领卓科技有限公司 | Pure metal material with both high strength and high plasticity and preparation method thereof |
| US9938606B2 (en) | 2013-04-08 | 2018-04-10 | Mitsubishi Materials Corporation | Hot-rolled copper plate |
| WO2021000511A1 (en) * | 2019-07-01 | 2021-01-07 | 宁德时代新能源科技股份有限公司 | Negative current collector, negative pole piece, electrochemical apparatus, battery module, battery pack and device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102400188B (en) * | 2010-09-10 | 2014-10-22 | 中国科学院金属研究所 | (111) texture nano-grade twin crystal Cu block material and preparation method thereof |
-
2001
- 2001-06-01 CN CNB011140267A patent/CN1181224C/en not_active Expired - Lifetime
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004040042A1 (en) * | 2002-11-01 | 2004-05-13 | Institute Of Metal Research Chinese Academy Of Sciences | A nano icrystals copper material with super high strength and conductivity and method of preparing thereof |
| US7736448B2 (en) | 2002-11-01 | 2010-06-15 | Institute Of Metal Research Chinese Academy Of Sciences | Nano icrystals copper material with super high strength and conductivity and method of preparing thereof |
| CN1320672C (en) * | 2005-07-25 | 2007-06-06 | 北京中科天华科技发展有限公司 | Nano-electrolytic copper foil suitable to lithium ion cell and preparation method |
| CN100553833C (en) * | 2008-01-14 | 2009-10-28 | 重庆大学 | The method for preparing metallic simple substance nano-crystal material |
| CN102031490A (en) * | 2010-12-30 | 2011-04-27 | 江苏大学 | High-strength high-conductivity nanocrystal copper material and preparation method thereof |
| US9938606B2 (en) | 2013-04-08 | 2018-04-10 | Mitsubishi Materials Corporation | Hot-rolled copper plate |
| CN105780065A (en) * | 2015-12-27 | 2016-07-20 | 佛山市领卓科技有限公司 | Electrolytic copper foil and preparation method thereof |
| CN105780064A (en) * | 2015-12-27 | 2016-07-20 | 佛山市领卓科技有限公司 | Copper foil for circuit board and preparation method thereof |
| CN105780052A (en) * | 2015-12-27 | 2016-07-20 | 佛山市领卓科技有限公司 | Pure metal material with both high strength and high plasticity and preparation method thereof |
| CN105780066A (en) * | 2015-12-27 | 2016-07-20 | 佛山市领卓科技有限公司 | High-performance copper foil and preparation method thereof |
| CN105780052B (en) * | 2015-12-27 | 2019-03-01 | 上海合富新材料科技股份有限公司 | It is a kind of to have both the high-intensitive pure metal material and preparation method thereof with high-ductility |
| CN105780066B (en) * | 2015-12-27 | 2019-06-04 | 深圳百嘉达新能源材料有限公司 | A kind of high-performance copper foil and preparation method thereof |
| WO2021000511A1 (en) * | 2019-07-01 | 2021-01-07 | 宁德时代新能源科技股份有限公司 | Negative current collector, negative pole piece, electrochemical apparatus, battery module, battery pack and device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1181224C (en) | 2004-12-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102400188B (en) | (111) texture nano-grade twin crystal Cu block material and preparation method thereof | |
| CN1234914C (en) | Nano twin crystal copper material with ultrahigh strength and superhigh conductivity as well as preparation method | |
| WO2004040042A1 (en) | A nano icrystals copper material with super high strength and conductivity and method of preparing thereof | |
| Wang et al. | Preparation of electro-reduced graphene oxide/copper composite foils with simultaneously enhanced thermal and mechanical properties by DC electro-deposition method | |
| Liu et al. | Control of the microstructure and mechanical properties of electrodeposited graphene/Ni composite | |
| CN1181224C (en) | A preparation method of high-strength and high-conductivity nanocrystalline copper material | |
| CN108149046B (en) | High-strength and high-conductivity graphene/copper nano composite material and preparation method and application thereof | |
| CN113621999B (en) | High-extensibility electrolytic copper foil and preparation method thereof | |
| CN100588749C (en) | A kind of nano-twinned nickel coating with high corrosion resistance and preparation method thereof | |
| CN113621998A (en) | Nano twin crystal copper foil and preparation method thereof | |
| CN108504908A (en) | A kind of preparation method of carbon nanotube enhanced aluminium-based composite material | |
| JP2012007231A (en) | Cu-Mg-P-BASED COPPER ALLOY BAR MATERIAL AND MANUFACTURING METHOD THEREFOR | |
| WO2012111567A1 (en) | Cu-Zr-BASED COPPER ALLOY PLATE AND PROCESS FOR MANUFACTURING SAME | |
| WO2013157598A1 (en) | Steel foil and method for producing same | |
| Bo et al. | Corrosion and discharge behavior of Mg− Zn− Mn− Nd alloys as primary Mg− air batteries anode | |
| KR20140002001A (en) | Cu-ni-si alloy wire having excellent bendability | |
| CN111534714A (en) | Nb and Al-containing titanium bronze alloy strip and preparation method thereof | |
| CN102031490B (en) | High-strength high-conductivity nanocrystal copper material and preparation method thereof | |
| CN117701929A (en) | AlCrCuFeNi high entropy alloy particles reinforced copper matrix composites | |
| CN117604318B (en) | In-situ authigenic graphene/copper composite material with orientation double-peak structure and preparation method thereof | |
| JP2004256902A (en) | Cu-Cr-Zr ALLOY, AND PRODUCTION METHOD THEREFOR | |
| CN112342596A (en) | Preparation method of copper-based composite material with high conductivity | |
| CN105648284A (en) | High-conductivity alloy material replacing copper with aluminum | |
| US11285532B2 (en) | Boron-nitride nanoplatelet(s)/metal nanocomposite powder and preparing method thereof | |
| CN1975949A (en) | Aluminium foil for electrolytic capacitor low-voltage anode use and producing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20041222 |