CN1365141A - Bump making method - Google Patents
Bump making method Download PDFInfo
- Publication number
- CN1365141A CN1365141A CN01101618A CN01101618A CN1365141A CN 1365141 A CN1365141 A CN 1365141A CN 01101618 A CN01101618 A CN 01101618A CN 01101618 A CN01101618 A CN 01101618A CN 1365141 A CN1365141 A CN 1365141A
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- CN
- China
- Prior art keywords
- metal layer
- photoresist
- layer
- projection
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 40
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000010410 layer Substances 0.000 claims description 72
- 238000004519 manufacturing process Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 25
- 239000011241 protective layer Substances 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000011505 plaster Substances 0.000 claims description 7
- 239000006071 cream Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 abstract description 5
- 230000004224 protection Effects 0.000 abstract description 3
- 238000002955 isolation Methods 0.000 abstract 5
- 238000003466 welding Methods 0.000 abstract 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 238000009713 electroplating Methods 0.000 description 6
- 238000005304 joining Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000010808 liquid waste Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
A method for making convex block includes forming isolation metal layer and under ball metal layer on welding pad and protection layer on chip, defining convex block forming position above welding pad and removing under ball metal layer out of said position to leave isolation metal layer at bottom layer. Forming patterned photoresist on the unremoved isolation metal layer, filling tin-lead paste into the photoresist opening in a printing mode, wherein the opening is positioned at the position of the bump to be grown, reflowing the solder before stripping the photoresist, and finally removing the isolation metal layer. Since the photoresist is formed on the isolation metal layer, it can be completely stripped.
Description
The present invention relates to a kind of projection (bump) manufacture method, particularly relate to and a kind ofly can be effectively wafer (wafer) be gone up the method for producing lug that remaining organic material and tin ion are removed.
The encapsulation of first stratum mainly is connected to crystal grain on the carrier (carrier), three kinds of encapsulation kenels are roughly arranged, be respectively bonding wire (wire bond), paste be with automatic joining technique (Tape Automated Bonding, TAB) and the flip-chip joining technique (Flip Chip, F/C).Wherein, paste to be with automatic joining technique (TAB) or flip-chip joining technique (F/C) no matter be, in the process that engages, all must on the weld pad (I/O pad) of wafer, carry out projection and grow up (bumping), and by projection as the media that is electrically connected between core grain (chip) and the carrier.And be with in automatic joining technique (TAB) or the flip-chip joining technique (F/C) in subsides, the uniformity (height uniformity) of core grain upper protruding block height is very important, and at present producing lug all develops towards high bump height, good bump height uniformity and projection direction with little spacing (fine pitch).
Please refer to Figure 1A to Fig. 1 C, it is the schematic flow sheet of existing method for producing lug.At first please refer to Figure 1A, a wafer 100 is provided, have tens thousand of weld pads 102 and on the wafer 100 and be covered in weld pad 102 edges and wafer 100 lip-deep protective layers 104.Then on weld pad 102 and protective layer 104, form a ball substrate layer (Under Bump Metallurgy; UBM) 106; and ball substrate layer 106 is the structure of a multilayer; comprise a titanium coating 106a and a copper metal layer 106b, produce the phenomenon of dissolving each other with Solder Bumps (solder bump) and the weld pad 102 that forms after effectively preventing.
Then please refer to Figure 1B, on wafer 100, cover the photoresist 108 of a patterning with ball substrate layer 106, on ball substrate layer 106, to limit the position that projection is grown up, then form a tin lead layer 110 on the ball substrate layer 106 that is not covered in the mode of electroplating (electroplating) again by photoresist 108, the thickness of its tin lead layer 110 is mainly controlled in the parameter of electroplating, and the thickness of tin lead layer 110 is electroplated manufacture craft therewith direct association is arranged.
Please refer to Fig. 1 C at last, photoresist 108 is divested, carry out the step of a reflow (reflow) again, make tin lead layer 110 after reflow, because of cohesive force becomes spherical projection 112.Be photomask (mask) with spherical projection 112 more preferably,, so promptly finished the making of projection not removed by the ball substrate layer 106 of spherical projection 112 protections.
In the existing method for producing lug, because the formation of projection, with the plating mode tin lead layer of on ball substrate layer, growing up, in the plating manufacture craft that projection is grown up, CURRENT DISTRIBUTION on the entire wafer often phenomenon pockety may occur, and formed tin lead layer is in uneven thickness, the tin amount difference to some extent that falls of each projection so can cause.And the manufacture method of existing projection is unhappy with the speed of electroplating manufacture craft formation tin lead layer, influences production capacity (throughput).
In addition, the manufacture method of existing projection, because the formation of projection is with the plating mode tin lead layer of growing up on ball substrate layer, it is 63: 37 that tin lead content in the electroplate liquid need be controlled at tin/lead ratio, because the proportional control of tin/lead is difficult for, causing tin/lead ratio in the formed tin lead layer is not 63: 37 ratio, so the temperature when the tin lead layer reflow is estimated to be difficult for.
The object of the present invention is to provide a kind of method for producing lug, its mode with printing (printing) forms tin lead layer, because tin lead plaster (solderpaste) composition in order to printing is fixed, so the tin/lead proportion of the tin lead layer that forms can accurately be controlled, to improve the production capacity of electroplating manufacture craft.
The object of the present invention is achieved like this, a kind of method for producing lug promptly is provided, be suitable for the producing lug on the wafer, wherein have a plurality of weld pads and a protective layer on this wafer, this method for producing lug comprises at least: form an isolating metal layer on this each weld pad and this protective layer; On this isolating metal layer, form a ball substrate layer; Limit a projection and form the position, and the ball substrate layer beyond this projection formation position is removed, to expose this isolating metal layer; Form a photoresist, this photoresist has a plurality of openings, and wherein each this each opening forms the position corresponding to this projection; With mode of printing one metal cream is inserted in this each opening; Carry out a reflow step; Divest this photoresist; And remove the isolating metal layer that exposes.
Furtherly; a kind of method for producing lug provided by the present invention; provide a wafer; on weld pad on the wafer and protective layer, form the ball substrate layer of an isolating metal layer and a sandwich construction; above weld pad, limit projection afterwards and form the position; and the ball substrate layer that projection is formed beyond the position removes, and the isolating metal layer of bottom is come out.Then on ball substrate layer and isolating metal layer, be coated with a bed thickness photoresist, and with exposure, visualization way forms locational thick photoresist with projection and removes, with mode of printing one tin lead plaster being inserted projection again forms in the position, then before not divesting, thick photoresist carries out a reflow step earlier, again thick photoresist is divested, the isolating metal layer that will expose at last removes, and promptly finishes the making of wafer upper protruding block.Because photoresist is formed on the isolating metal layer, so that photoresist can be divested is very complete.
Below in conjunction with accompanying drawing, describe embodiments of the invention in detail, wherein:
Figure 1A to Fig. 1 C is the schematic flow sheet of existing method for producing lug;
Fig. 2 A to Fig. 2 D is the schematic flow sheet of method for producing lug in a preferred embodiment of the present invention.
Please refer to Fig. 2 A to Fig. 2 D, it is the schematic flow sheet according to method for producing lug in a preferred embodiment of the present invention.At first please refer to Fig. 2 A; one wafer 200 is provided; have tens thousand of weld pads 202 and on the wafer 200 and be covered in protective layer 204 on weld pad 202 edges and the wafer 200; the material of weld pad 202 for example is an aluminum metal; and the material of protective layer 204 for example is silica (silicon oxide), silicon nitride (silicon nitride, Si
3N
4) or polyimide (polyimide) etc.Then form an isolating metal layer 205 on wafer 200, isolating metal layer 205 must have can be with the effect of isolating between follow-up formation photoresist and the protective layer.Then form a ball substrate layer 206 again, ball substrate layer 206 for example is a sandwich construction, comprises a first metal layer 206a and one second metal level 206b at least.Wherein, the thickness of the first metal layer 206a for example is 3000 , the thickness of the second metal level 206b for example is that the above ball substrate layer 206 of the above-mentioned two-layer structure of 7000 has good resistance barrier (barrier) function, can prevent to dissolve each other between the projection (not illustrating) of follow-up formation and the weld pad 202.
Then please refer to Fig. 2 B, the projection position of growing up is removed with the ball substrate layer 206 of exterior domain, only keep ball substrate layer 206 part of projection growth position, weld pad 202 top, come out with the isolating metal layer 205 of exterior domain in projection growth position.And the method that ball substrate layer 206 removes is for example covered on the ball substrate layer 206 of weld pad 202 tops with a photoresist layer (show and illustrate), the ball substrate layer 206 that not covered by photoresist with etching mode divests again.
Then please refer to Fig. 2 C, form a photoresist 208 and be covered on the isolating metal layer 205 that exposes, wherein, photoresist 208 has several openings 209 corresponding to weld pad 202, and the thickness of photoresist 208 for example is more than 70 microns.Then tin lead plaster 210 is inserted in the opening 209 of photoresist 208 in the mode of printing.Afterwards, carry out the step of a reflow (reflow), make tin lead plaster 210 fusions (melting),, just photoresist 208 can be divested afterwards to form Solder Bumps (solderbump).Because the thickness of the photoresist that forms 208 for example can thickly reach more than 70 microns, so higher projection of height that can form, and can obtain well-proportioned bump height (heightuniformity), and do not have the unclear problem of production capacity (throughput).
Please refer to Fig. 2 C equally; after the reflow step; if not having isolating metal layer 205 will isolate between photoresist 208 and the protective layer 204; be photoresist if be formed directly on the protective layer 204; photoresist 208 has the phenomenon that can not be divested fully, can reach the effect of the photoresist 208 that divests organic material fully so add isolating metal layer 205.Therefore, the disclosed method of the present invention can divest photoresist and residual tin, lead button on the wafer fully, and the strip process that can be applicable to other photoresists after high-temperature process is technical, and not only is confined to the manufacture craft of producing lug.
Please refer to Fig. 2 D at last, after photoresist 208 (not illustrating) is divested, again the isolating metal layer 205 that it exposed is divested till the protective layer 204 that exposes on the wafer 200.Because photoresist 208 (not illustrating) is formed on the isolating metal layer 205 that exposes, so it is very complete that the photoresist 208 (not illustrating) of process reflow step can be peeled off when isolating metal layer 205 is removed when divesting, therefore, can follow-up packaging manufacturing process not polluted (contamination).
In sum, method for producing lug of the present invention has following advantage at least:
1. it is existing with plating mode formation tin lead layer that method for producing lug of the present invention forms the replacement of tin lead plaster with mode of printing, has higher production capacity.
2. method for producing lug of the present invention is to form the replacement of tin lead plaster with mode of printing to have now with plating mode formation tin lead layer, can improve the plating manufacture craft and form tin in the tin lead layer/lead proportion inequality and reach the uneven problem of Solder Bumps height.
3. the present invention's electroplate liquid liquid waste processing problem of not electroplating manufacture craft and being produced, and manufacture craft simply can significantly reduce manufacturing cost and improve production capacity.
4. the present invention removes the subregional ball substrate layer in ball substrate layer middle part in advance, to expose the isolating metal layer under it, on the isolating metal layer, form photoresist afterwards again, make the photoresist layer that is formed on the isolating metal layer after, do not have the difficulty that divests through the reflow step.
Though disclosed the present invention in conjunction with an above preferred embodiment; yet it is not in order to limit the present invention; any those skilled in the art can be used for a variety of modifications and variations without departing from the spirit and scope of the present invention, so protection scope of the present invention should be with being as the criterion that claim was defined.
Claims (3)
1. a method for producing lug is suitable for the producing lug on the wafer, wherein has a plurality of weld pads and a protective layer on this wafer, and this method for producing lug comprises at least:
On this each weld pad and this protective layer, form an isolating metal layer;
On this isolating metal layer, form a ball substrate layer;
Limit a projection and form the position, and the ball substrate layer beyond this projection formation position is removed, to expose this isolating metal layer;
Form a photoresist, this photoresist has a plurality of openings, and wherein each this each opening forms the position corresponding to this projection;
With mode of printing one metal cream is inserted in this each opening;
Carry out a reflow step;
Divest this photoresist; And
Remove the isolating metal layer that exposes.
2. method for producing lug as claimed in claim 1, wherein this isolating metal layer has the function of isolating this photoresist and this protective layer.
3. method for producing lug as claimed in claim 1, wherein the material of this metal cream comprises tin lead plaster (Sn
63Pb
37) or other materials can form the metal cream of projection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN01101618A CN1365141A (en) | 2001-01-12 | 2001-01-12 | Bump making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN01101618A CN1365141A (en) | 2001-01-12 | 2001-01-12 | Bump making method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1365141A true CN1365141A (en) | 2002-08-21 |
Family
ID=4652165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN01101618A Pending CN1365141A (en) | 2001-01-12 | 2001-01-12 | Bump making method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1365141A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100489630C (en) * | 2005-03-08 | 2009-05-20 | 友达光电股份有限公司 | Conductive bump and display panel |
| CN100499095C (en) * | 2006-11-03 | 2009-06-10 | 台湾积体电路制造股份有限公司 | Semiconductor device and method for manufacturing the same |
| CN100580899C (en) * | 2008-04-30 | 2010-01-13 | 日月光半导体制造股份有限公司 | Bumping process |
| CN1681099B (en) * | 2004-03-31 | 2010-04-28 | 国际商业机器公司 | Method for forming interconnection structure |
| CN102224586A (en) * | 2008-09-25 | 2011-10-19 | Lg伊诺特有限公司 | Structure and manufacture method for multi-row lead frame and semiconductor package |
| CN101740420B (en) * | 2008-11-05 | 2011-11-09 | 中芯国际集成电路制造(上海)有限公司 | Process for manufacturing copper strut |
| CN102347380A (en) * | 2010-08-06 | 2012-02-08 | 太聚能源股份有限公司 | Solar cell electrode and manufacturing process thereof |
| CN105006436A (en) * | 2015-06-05 | 2015-10-28 | 华进半导体封装先导技术研发中心有限公司 | Apparatus improving the preparation yield rate of micro-bumps and micro-bump preparation process |
| CN105006437A (en) * | 2015-07-28 | 2015-10-28 | 江阴长电先进封装有限公司 | Manufacturing method of high-density convex block structure |
| CN109065459A (en) * | 2018-07-27 | 2018-12-21 | 大连德豪光电科技有限公司 | The production method of pad |
-
2001
- 2001-01-12 CN CN01101618A patent/CN1365141A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1681099B (en) * | 2004-03-31 | 2010-04-28 | 国际商业机器公司 | Method for forming interconnection structure |
| CN100489630C (en) * | 2005-03-08 | 2009-05-20 | 友达光电股份有限公司 | Conductive bump and display panel |
| CN100499095C (en) * | 2006-11-03 | 2009-06-10 | 台湾积体电路制造股份有限公司 | Semiconductor device and method for manufacturing the same |
| CN100580899C (en) * | 2008-04-30 | 2010-01-13 | 日月光半导体制造股份有限公司 | Bumping process |
| US8659131B2 (en) | 2008-09-25 | 2014-02-25 | Lg Innotek Co., Ltd. | Structure for multi-row lead frame and semiconductor package capable of minimizing an under-cut |
| CN102224586A (en) * | 2008-09-25 | 2011-10-19 | Lg伊诺特有限公司 | Structure and manufacture method for multi-row lead frame and semiconductor package |
| CN102224586B (en) * | 2008-09-25 | 2013-12-11 | Lg伊诺特有限公司 | Structure and manufacture method for multi-row lead frame and semiconductor package |
| CN101740420B (en) * | 2008-11-05 | 2011-11-09 | 中芯国际集成电路制造(上海)有限公司 | Process for manufacturing copper strut |
| CN102347380A (en) * | 2010-08-06 | 2012-02-08 | 太聚能源股份有限公司 | Solar cell electrode and manufacturing process thereof |
| CN105006436A (en) * | 2015-06-05 | 2015-10-28 | 华进半导体封装先导技术研发中心有限公司 | Apparatus improving the preparation yield rate of micro-bumps and micro-bump preparation process |
| CN105006437A (en) * | 2015-07-28 | 2015-10-28 | 江阴长电先进封装有限公司 | Manufacturing method of high-density convex block structure |
| CN105006437B (en) * | 2015-07-28 | 2018-06-26 | 江阴长电先进封装有限公司 | A kind of manufacturing method of high density projection cube structure |
| CN109065459A (en) * | 2018-07-27 | 2018-12-21 | 大连德豪光电科技有限公司 | The production method of pad |
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