CN1343015A - Gallium nitride-based III-V compound semiconductor device and manufacturing method thereof - Google Patents
Gallium nitride-based III-V compound semiconductor device and manufacturing method thereof Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 103
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 82
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 150000001875 compounds Chemical class 0.000 title claims abstract description 30
- 238000000137 annealing Methods 0.000 claims abstract description 50
- 230000004888 barrier function Effects 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 3
- 239000010936 titanium Substances 0.000 claims description 47
- 239000010931 gold Substances 0.000 claims description 45
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 21
- 229910002704 AlGaN Inorganic materials 0.000 description 18
- 238000000576 coating method Methods 0.000 description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 9
- 230000004913 activation Effects 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- 229910019080 Mg-H Inorganic materials 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- KSPMJHKUXSQDSZ-UHFFFAOYSA-N [N].[N] Chemical compound [N].[N] KSPMJHKUXSQDSZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
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Abstract
一种基于氮化镓的III－V族化合物半导体装置的制造方法,包括:在基板上方形成半导体叠层构造,半导体叠层构造包括n型半导体层、主动层以及p型半导体层;蚀刻半导体叠层构造,以露出n型半导体层的一部分;在n型半导体层上形成第一电极,其中第一层电极包括欧姆接触层、阻障层与焊垫层;进行退火制作工艺,用以降低第一电极与n型半导体层之间的接触电阻,同时活化p型半导体层;与在p型半导体层上形成一第二电极。
A method for manufacturing a III-V compound semiconductor device based on gallium nitride comprises: forming a semiconductor stack structure above a substrate, the semiconductor stack structure comprising an n-type semiconductor layer, an active layer and a p-type semiconductor layer; etching the semiconductor stack structure to expose a portion of the n-type semiconductor layer; forming a first electrode on the n-type semiconductor layer, wherein the first electrode comprises an ohmic contact layer, a barrier layer and a pad layer; performing an annealing process to reduce the contact resistance between the first electrode and the n-type semiconductor layer and activate the p-type semiconductor layer; and forming a second electrode on the p-type semiconductor layer.
Description
The present invention relates to a kind of III-V compound semiconductor device and manufacture method thereof based on gallium nitride.
Since the III-V group-III nitride, promptly comprise gallium nitride (GaN) for example, aluminium gallium nitride alloy (GaAIN), indium gallium nitride (InGaN), and after the epitaxial layer that waits of aluminum gallium nitride indium (InAlGaN) successfully become to grow first, because it has direct energy band, bandwidth height, satisfies and close characteristics such as drift speed height, breakdown electric field height and chemical inertness, is hopeful to be used to make the electronic installation of high temperature/high-capacity and the material of electrooptical device most so become.Recently because the enhancement of the crystalline quality of the epitaxial layer of higher-doped concentration high-quality laser diode, light-emitting diode, optical detector and the microwave field effect transnistor made from III-V group-III nitride brilliant structure of heap of stone etc. so develop.
Generally speaking, the performance of III-V group-III nitride device can be subjected to the restriction of its contact resistance.Therefore, the key technology of manufacturing high-performance III-V group-III nitride device is whether to produce the high Metal Contact of reliability.With GaN is example, though existing document has pointed out that many kinds of metals can be used as its contact, titanium/aluminium (Ti/Al) is double-deck to be the most widely-used ohmic contact layer as n type GaN on having now.Yet this Ti/Al bilayer is easily oxidized, and causes the rising of ohmic contact resistance in follow-up manufacture craft with operating period.
For fear of the at high temperature easily oxidized tendency of Ti/Al bilayer, can cover above it the low-resistance gold of one deck (Au) as passivation layer (passivation) so that its surface passivation.But gold can inwardly diffuse in titanium layer, the aluminium lamination and be penetrated in the GaN layer, and causes thermal stability, reliability and the ohmic contact characteristic variation of semiconductor device.
The cutaway view of Fig. 1 shows III-V compound semiconductor light-emitting diode (the light-emitting device based on GaN; LED) 100 typical construction.
Light-emitting diode 100 have one transparent and the insulation substrate 1, it is made with for example sapphire (sapphire).This substrate 1 has one first first type surface 1a and one second first type surface 1b.The made resilient coating 2 of GaN is formed on the first first type surface 1a of substrate 1.The III-V compound semiconductor layer 3 based on GaN of n type is formed on the resilient coating 2.This n type semiconductor layer 3 is mixed with for example germanium (Ge), selenium (Se), sulphur (S) or tellurium n type admixtures such as (Te).In addition, this n type semiconductor layer 3 can doped silicon (Si).
N type AlGaN layer 4 is formed on the n type semiconductor layer 3.Active layers 5 is formed on the n type AlGaN layer 4, and this active layers 5 is by the multiple quantum trap (MQW) that for example InGaN/GaN constituted, single quantum well (SQW) or two heterogeneous (DH) structure.P type AlGaN layer 6 is formed on the active layers 5.
The III-V compound semiconductor layer 7 based on GaN of one P type is formed on the p type AlGaN layer 6.This p type semiconductor layer 7 is mixed with p type admixtures such as for example beryllium (Be), strontium (Sr), barium (Ba), zinc (Zn) or magnesium.
As shown in Figure 1, light-emitting diode 100 has an electrode 8A and is formed on the n type semiconductor layer 3; Be formed on the p type semiconductor layer 7 with an electrode 8B.The existing electrode 8A metal materials such as titanium, aluminium, gold that comprise as indicated above.Electrode 8B is a kind of Ohmic electrode, and it can comprise for example metal materials such as nickel (Ni), chromium (Cr), gold, platinum (Pt) or titanium.
Then, with reference to the manufacturing process steps of the existing light-emitting diode 100 of the flowchart text of figure 2.
At first, shown in step 201, with resilient coating 2, n type semiconductor layer 3, n type AlGaN layer 4, active layers 5, p type AlGaN layer 6, be formed on substrate 1 top in regular turn with p type semiconductor layer 7.
Then, shown in step 202, heat-treat with activation p type AlGaN layer 6 and p type semiconductor layer 7.Because the magnesium that is mixed in p type AlGaN layer 6 and the p type semiconductor layer 7 can form the Mg-H bond, and causes the hole can't be provided.Be in this purpose of heat-treating and interrupt this Mg-H bond and activate p type AlGaN layer 6 and p type semiconductor layer 7.This heat treated condition is generally at 650 to 780 ℃ and heated 15 to 60 minutes down.
Then, shown in step 203, with p type semiconductor layer 7, p type AlGaN layer 6, active layers 5, and n type AlGaN layer 4 partially-etched removing, so that the surface of n type semiconductor layer 3 is exposed.At this, the surperficial part of n type semiconductor layer 3 is also etched to be removed.
Afterwards, shown in step 204, form electrode 8A and 8B, wherein electrode 8A is formed on the n type semiconductor layer 3, and electrode 8B is formed on the p type semiconductor layer 7.The formation of electrode 8A and 8B can utilize existing deposition technique, for example vapour deposition method or sputtering method etc.
Then, (annealing) manufacture craft of shown in step 205, annealing.The purpose of this step is for reducing the ohmic contact resistance of electrode 8A and 8B.The condition of this annealing manufacture craft is generally at 300 to 400 ℃ carries out.
The object of the present invention is to provide a kind of III-V compound semiconductor device and manufacture method thereof, to address the above problem based on gallium nitride.
The object of the present invention is achieved like this, and a kind of manufacture method of the III-V compound semiconductor device based on gallium nitride promptly is provided, and comprise following each step: a substrate is provided, and it has first and second first type surface; Form the semiconductor stromatolithic structure above first first type surface of this substrate, wherein this semiconductor laminated structure comprises the III-V compound semiconductor layer based on gallium nitride of the III-V compound semiconductor layer based on gallium nitride, an active layers and a p type of a n type; This semiconductor laminated structure of etching is to expose the part of n type semiconductor layer; Form one first electrode on the n type semiconductor layer, wherein this first electrode comprises that an ohmic contact layer, a barrier layer are positioned at this ohmic contact layer top, are positioned at this barrier layer top with a soldering pad layer; The manufacture craft of annealing in order to reduce the contact resistance between this first electrode and this n type semiconductor layer, reaches the effect of this p type semiconductor layer of activation simultaneously; With formation one second electrode on the p type semiconductor layer.
The present invention also provides kind of the III-V compound semiconductor device based on gallium nitride, comprising: the III-V compound semiconductor layer based on gallium nitride of a n type; And an electrode, be positioned on the III-V compound semiconductor layer based on gallium nitride of this n type, and this electrode comprises that an ohmic contact layer, a barrier layer are positioned at this ohmic contact layer top, are positioned at this barrier layer top with a soldering pad layer.
The present invention also provides a kind of III-V compound semiconductor device based on gallium nitride, comprising: a substrate, and it has first and second first type surface; The semiconductor stromatolithic structure, it is formed on first first type surface top of this substrate, and it comprises the III-V compound semiconductor layer based on gallium nitride of the III-V compound semiconductor layer based on gallium nitride, an active layers and a p type of a n type; One first electrode is positioned on the n type semiconductor layer, and this first electrode comprises that an ohmic contact layer, a barrier layer are positioned at this ohmic contact layer top, are positioned at this barrier layer top with a soldering pad layer; With one second electrode, be positioned on the p type semiconductor layer.
The ohmic contact of n type GaN of the present invention, its thermally-stabilised tolerance (thermal stabilityendurance) are much better than the thermally-stabilised tolerance of existing Ti/Al/Au multilayer.Therefore, the manufacture method of compound semi-conductor device of the present invention is simplified than existing method, and thereby can reduce cost and increase production capacity.
Below in conjunction with accompanying drawing, describe embodiments of the invention in detail, wherein:
Fig. 1 is the cutaway view according to the III-V compound semiconductor light-emitting diode that the present invention is based on GaN;
Fig. 2 is the flow chart of the manufacturing process steps of light-emitting diode 100;
Fig. 3 is the detailed construction cutaway view of electrode of the present invention;
Fig. 4 is shown in feature contact resistance that different annealing temperature bottom electrode Ti/Al/Pt/Au contacts with the n type GaN functional arrangement for annealing time;
Fig. 5 is the feature contact resistance that contacts with the n type GaN of unrecovered implanted silicon at the different annealing temperature bottom electrode Ti/Al/Pt/Au functional arrangement for annealing time;
Fig. 6 is the feature contact resistance that contacts at different annealing temperature bottom electrode Ti/Al/Pt/Au and implanted silicon and the n type GaN that the recovers functional arrangement for annealing time;
Fig. 7 is the feature contact resistance that contacts with n type GaN at the different annealing temperature bottom electrode Ti/Al/Pt/Au functional arrangement for annealing time;
Fig. 8 is the feature contact resistance that contacts with the n type GaN of unrecovered implanted silicon at the different annealing temperature bottom electrode Ti/Al/Pt/Au functional arrangement for annealing time;
Fig. 9 is the feature contact resistance that contacts at different annealing temperature bottom electrode Ti/Al/Pt/Au and implanted silicon and the n type GaN that the recovers functional arrangement for annealing time;
Figure 10 is for showing the manufacturing process steps flow chart of light-emitting diode of the present invention.
Among the present invention, the nitride-based semiconductor that " based on the III-V compound semiconductor of gallium nitride " speech means the III family element that comprises gallium is GaN, GaAlN, InGaN or InAlGaN etc. for example.
Describe the present invention in detail below with reference to accompanying drawing.
The present invention proposes the structure of a kind of electrode 8A, and it comprises: an ohmic contact layer comprises for example alloy of titanium nitride, titanium, aluminium, chromium, indium, palladium or above-mentioned metal; One barrier layer is positioned at this ohmic contact layer top, and this barrier layer comprises for example platinum, tungsten (W) or nickel; Be positioned at this barrier layer top with a weld pad (pad) layer, this soldering pad layer comprises for example gold.Electrode 8A of the present invention inwardly spreads and the phenomenon that is penetrated into semiconductor device inside so can prevent the existing gold of going up soldering pad layer owing to having barrier layer.
With reference to figure 3, it shows an example of the structure of electrode 8A of the present invention.In Fig. 3, indicate with identical reference number with Fig. 1 identical construction.As shown in Figure 3, the made resilient coating 2 of GaN is formed on the substrate 1.N type semiconductor layer 3 is formed on the resilient coating 2.This n type semiconductor layer 3 can doped silicon.Electrode 8A is formed on this n type semiconductor layer 3.Electrode 8A comprises that titanium layer 81, aluminium lamination 82 are formed on the titanium layer 81, platinum layer 83 is formed on the aluminium lamination 82 and gold layer 84 is formed on the platinum layer 83.To be the advantageous property of example explanation below with this electrode 8A (Ti/Al/Pt/Au) as the ohmic contact of n type GaN.Example one
On sapphire substrate, at 520 ℃ of thick GaN resilient coatings of one deck 300nm of growing down.Then, by Metalorganic Chemical Vapor Deposition (metalorganic chemical vapor deposition; MOCVD) under 1100 ℃, the thick n type GaN layer of growth one deck 2 μ m on the GaN resilient coating, wherein carrier concentration and mobility are respectively 6.7 * 10
17Cm
-3And 367cm
2/ V-S.
Then, on n type GaN layer, form electrode Ti/Al/Pt/Au of the present invention (25/100/50/200nm).In nitrogen (nitrogen) environment, respectively each sample is carried out annealing under different temperatures (750 ℃, 850 ℃ with 950 ℃) and the different time, and measure its feature contact resistance (specificcontact resistance; ρ C).The results are shown in Fig. 4.Example two
On sapphire substrate, at 520 ℃ of thick GaN resilient coatings of one deck 300nm of growing down.Then, the thick n type GaN layer of one deck 2 μ m because MOCVD under 1100 ℃, grows on the GaN resilient coating, wherein carrier concentration and mobility are respectively 6.7 * 10
17Cm
-3And 367cm
2/ V-S.Then, with the energy and 5 * 10 of 50KeV
15Cm
-2Dosage silicon is implanted in the n type GaN layer.
Then, on the n type GaN layer of implanted silicon, form electrode Ti/Al/Pt/Au of the present invention (25/100/50/200nm).In nitrogen environment, respectively each sample is carried out annealing under different temperatures (750 ℃, 850 ℃ with 950 ℃) and the different time, and measure its feature contact resistance (ρ C).The results are shown in Fig. 5.Example three
On sapphire substrate, in 520 ℃ of thick GaN resilient coatings of one deck 300nm of growing down.Then, the thick n type GaN layer of one deck 2 μ m because MOCVD under 1100 ℃, grows on the GaN resilient coating, wherein carrier concentration and mobility are respectively 6.7 * 10
17Cm
-3And 367cm
2/ V-S.Then, with the energy and 5 * 10 of 50KeV
15Cm
-2Dosage silicon is implanted in the n type GaN layer.Afterwards, in nitrogen environment, under 1050 ℃, annealed 30 minutes, recover (recovery), and simultaneously with the silicon activation of being implanted with the lattice that helps n type GaN layer.
Then, on the n type GaN layer of implanted silicon and recovery, form electrode Ti/Al/Pt/Au of the present invention (25/100/50/200nm).In nitrogen environment, respectively each sample is carried out annealing under different temperatures (750 ℃, 850 ℃ with 950 ℃) and the different time, and measure its feature contact resistance (ρ C).The results are shown in Fig. 6.Comparative example one
On sapphire substrate, at 520 ℃ of thick GaN resilient coatings of one deck 300nm of growing down.Then, the thick n type GaN layer of one deck 2 μ m because MOCVD under 1100 ℃, grows on the GaN resilient coating, wherein carrier concentration and mobility are respectively 6.7 * 10
17Cm
-3And 367cm
2/ V-S.
Then, on n type GaN layer, form the electrode Ti/Al/Au (25/100/200nm) of control group.In nitrogen environment, respectively each sample is carried out annealing under different temperatures (750 ℃, 850 ℃ with 950 ℃) and the different time, and measure its feature contact resistance (ρ C).The results are shown in Fig. 7.Comparative example two
On sapphire substrate, at 520 ℃ of thick GaN resilient coatings of one deck 300nm of growing down.Then, the thick n type GaN layer of one deck 2 μ m because MOCVD under 1100 ℃, grows on the GaN resilient coating, wherein carrier concentration and mobility are respectively 6.7 * 10
17Cm
-3And 367cm
2/ V-S.Then, with the energy and 5 * 10 of 50KeV
15Cm
-2Dosage silicon is implanted in the n type GaN layer.
Then, on the n type GaN layer of implanted silicon, form the electrode Ti/Al/Au (25/100/200nm) of control group.In nitrogen environment, respectively each sample is carried out annealing under different temperatures (750 ℃, 850 ℃ with 950 ℃) and the different time, and measure its feature contact resistance (ρ C).The results are shown in Fig. 8.Comparative example three
On sapphire substrate, at 520 ℃ of thick GaN resilient coatings of one deck 300nm of growing down.Then, the thick n type GaN layer of one deck 2um because MOCVD under 1100 ℃, grows on the GaN resilient coating, wherein carrier concentration and mobility are respectively 6.7 * 10
17Cm
-3And 367cm
2/ V-S.Then, with the energy and 5 * 10 of 50KeV
15Cm
-2Dosage silicon is implanted in the n type GaN layer.Afterwards, in nitrogen environment, under 1050 ℃, annealed 30 minutes, helping the recovery of n type GaN layer crystal lattice, and simultaneously with the silicon activation of being implanted.
Then, on the n type GaN layer of implanted silicon and recovery, form the electrode Ti/Al/Au (25/100/200nm) of control group.In nitrogen environment, respectively each sample is carried out annealing under different temperatures (750 ℃, 850 ℃ with 950 ℃) and the different time, and measure its feature contact resistance (ρ C).The results are shown in Fig. 9.
Data shown in the following table 1 can understand more that each example of the present invention creates conditions.
| Example one | Example two | Example three | Comparative example one | Comparative example two | Comparative example three | |
| Implanted silicon | ??√ | ??√ | ??√ | ??√ | ||
| Recover (recover) | ??√ | ??√ | ||||
| ???Ti/Al/Au | ??√ | ??√ | ??√ | |||
| ???Ti/Al/Pt/Au | ??√ | ??√ | ??√ | |||
| The results are shown in | Fig. 4 | Fig. 5 | Fig. 6 | Fig. 7 | Fig. 8 | Fig. 9 |
Example one is that electrode Ti/Al/Pt/Au of the present invention contacts with n type GaN, and Fig. 4 is shown under the different annealing temperature its feature contact resistance for the functional arrangement of annealing time.In Fig. 4, minimum feature contact resistance ρ C appear at respectively 750 ℃ 8 * 10
-6Ω-cm
2: 850 ℃ 7 * 10
-6Ω-cm
2And 950 ℃ 7 * 10
-6Ω-cm
2Comparative example one is that electrode Ti/Al/Au contacts with n type GaN, and Fig. 7 is for showing that its feature contact resistance is for the functional arrangement of annealing time under the different annealing temperature.Comparison diagram 4 can find that with Fig. 7 the minimal characteristic contact resistance that Ti/Al/Pt/Au multilayer and Ti/Al/Au multilayer can produce when contacting with n type GaN is approximately equal.But the thermally-stabilised tolerance of Ti/Al/Pt/Au multilayer but is much better than the thermally-stabilised tolerance of Ti/Al/Au multilayer.
Example two is that electrode Ti/Al/Pt/Au contacts with the n type GaN of unrecovered implanted silicon, and Fig. 5 is shown under the different annealing temperature its feature contact resistance for the functional arrangement of annealing time.Comparative example two is that electrode Ti/Al/Au contacts with the n type GaN of unrecovered implanted silicon, and Fig. 8 is shown under the different annealing temperature its feature contact resistance for the functional arrangement of annealing time.As Fig. 5 and shown in Figure 8, under 750 ℃ annealing temperature, the feature contact resistance of two kinds of electrodes is similar for the relation of annealing time before 60 minutes.It should be noted that in comparative example two, obtain minimum feature contact resistance down can be the time at 60 minutes at 750 ℃, and after 60 minutes the feature contact resistance just along with the time increases considerably.But in example two, as shown in Figure 5, when annealing down for 750 ℃, along with the increase of annealing time, the feature contact resistance still little by little reduces.
In Fig. 5, minimum feature contact resistance ρ C appear at respectively 750 ℃ (more than 600 minutes) 7 * 10
-4Ω-cm
2850 ℃ (540 minutes) 7 * 10
-5Ω-cm
2And 950 ℃ (60 minutes) 2 * 10
-5Ω-cm
2According to Fig. 5 and experimental result shown in Figure 8, the thermal stability of electrode Ti/Al/Pt/Au of the present invention is much better than the electrode Ti/Al/Pt/Au of control group.The thermally-stabilised tolerance of ohm performance of Ti/Al/Pt/Au multilayer be respectively 850 ℃ 540 minutes with 950 ℃ 60 minutes, can be 750 ℃ of following annealing above 600 minutes.
To be electrode Ti/Al/Pt/Au contact with implanted silicon and the n type GaN that recovers example three, and Fig. 6 is shown under the different annealing temperature its feature contact resistance for the functional arrangement of annealing time.In Fig. 6, minimum feature contact resistance ρ C appears at about 3 * 10 under 750 ℃, 850 ℃ and 950 ℃ of the annealing temperatures
-6Ω-cm
2To be electrode Ti/Al/Au contact with implanted silicon and the n type GaN that recovers comparative example three, and Fig. 9 is shown under the different annealing temperature its feature contact resistance for the functional arrangement of annealing time.Comparison diagram 6 and the shown experimental result of Fig. 9, the electrode Ti/Al/Au of control group approximately equates with electrode Ti/Al/Pt/Au of the present invention getable minimal characteristic contact resistance under same annealing temperature.But the thermally-stabilised tolerance of electrode Ti/Al/Pt/Au of the present invention but is much better than the thermally-stabilised tolerance of Ti/Al/Au multilayer.
Once mentioned hereinbefore because the magnesium that is mixed in p type AlGaN layer 6 and the p type semiconductor layer 7 can form the Mg-H bond and the hole can't be provided, activated p type AlGaN layer 6 and p type semiconductor layer 7 to interrupt this Mg-H bond after forming p type semiconductor layer 7 so existing meeting is heat-treated.The condition that this heat treatment is used is generally at 700 to 750 ℃ and heated 15 to 60 minutes down.Yet, because the thermally-stabilised tolerance height of Ti/Al/Pt/Au multilayer of the present invention, so in its annealing manufacture craft, the effect that reaches activation p type AlGaN layer 6 and p type semiconductor layer 7 when forming ohmic contact is obviously without a doubt.Therefore, the manufacture craft of light-emitting diode of the present invention can be omitted existing activation step, and reaches same effect in follow-up manufacture craft.The manufacture craft of light-emitting diode of the present invention is described below with reference to Figure 10.
At first, shown in step 101, with resilient coating 2, n type semiconductor layer 3, n type AlGaN layer 4, active layers 5, p type AlGaN layer 6, be formed on substrate 1 top in regular turn with p type semiconductor layer 7.
Then, shown in step 102, with p type semiconductor layer 7, p type AlGaN layer 6, active layers 5, and n type AlGaN layer 4 partially-etched removing, so that the surface of n type semiconductor layer 3 is exposed.At this, the surperficial part of n type semiconductor layer 3 is also etched to be removed.
Then, shown in step 103, electrode 8A is formed on the n type semiconductor layer 3.Electrode 8A forms and can utilize existing deposition technique, for example vapour deposition method or sputtering method etc.In addition, by the explanation of above-mentioned each example as can be known, with electrode 8A be formed on the n type semiconductor layer 3 before, can the implanted silicon atom to this n type semiconductor layer and carry out the recovery of this n type semiconductor layer.
Afterwards, shown in step 104, the manufacture craft of annealing.The purpose of this step is for reducing the ohmic contact resistance of electrode 8A.This annealing manufacture craft is to carry out under 400 to 950 ℃ temperature.Simultaneously, under this heating condition, can reach the purpose of activation p type semiconductor layer 7.
Then, shown in step 105, electrode 8B is formed on the p type semiconductor layer 7, can be undertaken by for example vapour deposition method or sputtering method etc.After forming electrode 8B, can carry out the process annealing below 700 ℃, to reduce the ohmic contact resistance of electrode 8B.
As mentioned above, owing in step 104, can reach the effect of annealing and activation simultaneously,, thereby can reduce cost and increase production capacity so the manufacture method of compound semi-conductor device provided by the present invention can be than the simplification of existing manufacture craft.
The above, only in order to be used for convenient explanation preferred embodiment of the present invention, be not with narrow sense of the present invention be limited to this preferred embodiment.All according to any change that the present invention did, all belong to claim scope of the present invention.
Claims (12)
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| CN103390639A (en) * | 2012-05-09 | 2013-11-13 | Nxp股份有限公司 | Group 13 nitride semiconductor device and method of its manufacture |
| CN103646961A (en) * | 2013-11-19 | 2014-03-19 | 中国电子科技集团公司第五十五研究所 | Silicon-based Group III nitride thin film containing high resistance parasitic conductive layer and growth method |
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| JP2006073619A (en) * | 2004-08-31 | 2006-03-16 | Sharp Corp | Nitride compound semiconductor light emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103390639A (en) * | 2012-05-09 | 2013-11-13 | Nxp股份有限公司 | Group 13 nitride semiconductor device and method of its manufacture |
| US9147732B2 (en) | 2012-05-09 | 2015-09-29 | Nxp B.V. | Group 13 nitride semiconductor device and method of its manufacture |
| CN103390639B (en) * | 2012-05-09 | 2018-02-23 | 安世有限公司 | 13rd nitride semiconductor devices and its manufacture method |
| CN103646961A (en) * | 2013-11-19 | 2014-03-19 | 中国电子科技集团公司第五十五研究所 | Silicon-based Group III nitride thin film containing high resistance parasitic conductive layer and growth method |
| CN103646961B (en) * | 2013-11-19 | 2017-02-22 | 中国电子科技集团公司第五十五研究所 | Silicon-based Group III nitride thin film containing high resistance parasitic conductive layer and growth method |
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