CN1311525A - Exposure mask and its mfg. method - Google Patents
Exposure mask and its mfg. method Download PDFInfo
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- CN1311525A CN1311525A CN 01109110 CN01109110A CN1311525A CN 1311525 A CN1311525 A CN 1311525A CN 01109110 CN01109110 CN 01109110 CN 01109110 A CN01109110 A CN 01109110A CN 1311525 A CN1311525 A CN 1311525A
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Abstract
Exposure mask and its manufacturing method includes the following steps: It is judged whether a doughnut problem, a leaf problem, or an aspect ratio problem occurs in a mask pattern, the mask pattern is divided into two patterns, when it is found that a problem occurs, and the two patterns are allotted to two masks. When one of the problems occurs, the pattern of one of the masks is partially allotted to the other mask. When no doughnut problem and no leaf problem occur, it is determined for each mask as to whether an aspect ratio problem occurs, when it is found that an aspect ratio problem has occurred, the pattern of one of the masks is partially allotted to the other mask. When it is found that no aspect ratio problem occurs, it is determined whether a connection failure occurs to a pattern connection, and when it is found that a connection failure has occurred, an auxiliary pattern is provided to a pattern connection.
Description
The present invention relates to use beam of charged particles such as electron beam, ion beam to carry out the exposed mask and the manufacture method thereof of graph exposure.
In recent years, along with the Highgrade integration of semiconductor device, the figure that semiconductor wafer is exposed in the exposure of this Micropicture, adopts the exposure method of beam of charged particles such as using electron beam, ion beam also by miniaturization.In addition,, also beam of charged particles is controlled in the required beam area, by in batches or the technology of integrally figure being exposed in exploitation in order to improve the output of graph exposure.For example, in exposing, making the beam area on the wafer is 5 μ m in batches
2About, and in overall exposing, making the beam area on the wafer is 250 μ m
2About, expose with beam irradiation mask by such square measure.In the exposure of using this beam of charged particles, exposed mask adopts film masks or template mask.Especially, the profile of template mask 10 1 examples of representing as Figure 16, template mask be the corrosion desired thickness silicon substrate 1 the back side and form recess 2, on the formed thinner wall section 3 of the upper bottom surface of this recess 2, leave the mask of the figure opening 4 that forms the shape of wanting.By using this template mask 10, for example shine that figure opening 4 is absorbed by silicon with the electron beam of exterior domain or by wide-angle ground scattering, have only electron beam that semiconductor wafer is exposed by figure opening 4, thus can with these figure opening 4 corresponding mask graph exposures on semiconductor wafer.
So, because template mask is for being provided with the structure of opening on the thin plate of silicon, so for example form the figure peristome of the such ring-type of Figure 17 (a), then the silicon of the central part of figure opening part may be indeformable and come off, can not form the figure of ring-type, thereby the restriction when becoming the designing mask figure.This phenomenon is called annular problem.In addition, shown in Figure 17 (b), only in the part of acyclic periphery, be under the foliated figure open condition of connecting state, the silicon part of the central portion of figure opening does not directly come off, but the length of linking portion is short, so mechanical strength is low, this silicon part in use comes off mostly, has problems aspect reliability.The restriction of the mask graph design that the figure of this blade (leaf) shape is caused is called the blade problem.Have again, for annular problem, blade problem, by being provided for respectively the inside and the periphery of figure opening are linked the bridge portion that supports in a plurality of places of ring-type figure opening or a part or a plurality of place of foliaceous figure opening, attempt eliminating described annular problem and blade problem, but in this bridge portion, electron beam can not pass through, and the part of bridge portion correspondence is not exposed, can not with the expectation graph exposure on semiconductor wafer.
On the other hand, to described annular problem and blade problem, proposed with the expose technology of figure or foliaceous figure of ring-type of two masks.For example, open in the flat 6-132206 communique the spy and to have disclosed such technology, as shown in Figure 3, for the figure of the ring-type of exposing, template mask is split up into two, on a template mask, in mask graph, form figure graph of a correspondence opening with the directions X component, the figure graph of a correspondence opening of formation and Y durection component exposes by using these two masks simultaneously in another template mask, realizes the exposure of ring-type figure.In addition, open in the flat 11-204422 communique the spy, be not used in the content of the annular problem that solves template mask, but this communique has disclosed such technology, as shown in Figure 1 in this communique, when the ring-type figure is exposed, form the independent respectively mask that forms of figure with each component of directions X and Y direction, expose with these figures of cutting apart.Thereby, use this technology, also can eliminate the blade problem.
But the technology of above-mentioned communique is under the situation of simple graph at the figure or the foliated figure of ring-type, and each component that only this figure is divided into directions X and Y direction is just passable, but under the situation of complicated shape, the situation that produces new problem is arranged.For example, specifically, in the mask graph P00 that mixes MOS transistor TR shown in Figure 3 described later and diode D, under situation about will expose to each figure of each connecting wiring 105～107 of the gate patterns 103 that is used to form grid and connected XY direction, mask graph P00 is divided in figure portion that prolongs on the directions X and the figure portion that prolongs on the Y direction, they are formed on separately the template mask.Thus, except extremely special figure situation, can form the mask of having eliminated annular problem or blade problem basically.But, under the situation of this mask, in a template mask, the a plurality of gate patterns that prolong on the Y direction are the figure for arranging by slight gap on directions X, so by the figure opening clamp part the X size and the ratio of Y size, to be that length-width ratio becomes big, make this quilt clamp the intensity decreases of part, probably can produce figure deformation or figure breakage.This phenomenon is called the length-width ratio problem.In addition, become off-state by the described figure that is in connection status of cutting apart, but owing to must cut apart and the exposure by two masks of the part that disconnects connects to this, so at least one mask, take place between two figures, may produce bad connection under the situation of exposure position deviation.This phenomenon is called connectivity problem between figure.As the technology of recording and narrating in the above-mentioned communique, the method that mask graph is divided into simply directions X component and Y durection component is difficult to eliminate connectivity problem between these length-width ratio problems and figure.
The object of the present invention is to provide a kind of exposed mask and manufacture method thereof, can eliminate annular problem and blade problem, and eliminate the length-width ratio problem, but also can eliminate connectivity problem between figure.
The present invention is a kind of exposed mask, the mask graph of expecting is exposed same being exposed on the substrate by a plurality of masks mask graph that constitute, that be provided with in each mask is exposed respectively.And the figure that the mask graph that is provided with in described each mask is cut apart respectively by the ring-type figure that will exist in the desired mask graph, foliaceous figure, figure that length-width ratio is big constitutes.In addition, exposed mask of the present invention in the mask graph of at least one mask of described a plurality of masks, with part that other mask graph is connected in, form to the side-prominent auxiliary pattern of the figure of other mask.The described a plurality of masks that constitute exposed mask of the present invention are template masks, it is characterized in that, the mask graph of described each mask is the figure opening that is provided with on the photomask substrate that constitutes described template mask.
Flow chart with reference to Fig. 1, exposed mask manufacture method of the present invention is characterised in that, comprise following each step: first step (step S11), on for the mask graph that forms exposed mask, judge the big length-width ratio problem of asperratio that whether produces by figure forms the annular problem of ring-type, the part that surrounded by figure forms the part of clamping between foliated blade problem, the figure; Second step (step S12) being judged to be when producing described ring-type problem or blade problem at least, is divided into two figures with described mask graph, and divided each figure is assigned as two masks of first and second; Third step (step S13) is judged described annular problem or the blade problem of whether taking place to each figure that distributes in described two masks; The 4th step (step S14) is being judged to be when at least one problem takes place, and the part of a mask graph is distributed into another mask; The 5th step (step S15) is being judged to be the whichever mask when described annular problem and blade problem all do not take place, and each figure of each mask is judged the described length-width ratio problem that whether takes place; The 6th step (step S16) when described length-width ratio problem takes place, is distributed into another mask with the part of a mask graph in being judged to be at least one mask; The 7th step (step S17) is being judged to be the whichever mask when described length-width ratio problem does not all take place, and judges in the coupling part of the mask graph of described two masks whether produce the bad connection part; And the 8th step (step S18), be judged to be when producing described bad connection part, form auxiliary pattern in the coupling part of this figure of a mask at least.
Wherein, as described second step, comprise the threshold value that will constitute each graphic width of a plurality of figure portion of described mask graph and regulation compare, based on the size of this comparative result, above-mentioned a plurality of figures are cut apart, and are assigned to step in described two masks.Perhaps, in described second step, comprise described mask graph is divided into plural fixed block, directions X or the adjacent piece of Y direction are assigned to step in described two masks.In this case, when the piece in being assigned to described two masks was the some contact condition at least one mask, described cut-off rule of described mask graph was cut apart in change.
In addition, in described third step and the 4th step, comprise repeatedly repeat until eliminating described annular problem and blade problem or until the step that reaches stipulated number.In this case, even described third step and the 4th step are repeatedly repeated when reaching described stipulated number and also do not eliminate described annular problem and blade problem, comprise that a part with described figure is assigned to the step in another the 3rd mask.
And, in described the 6th step, comprise when annular problem or blade problem take place once more, the figure distribution of above-mentioned the 6th step is returned the step of original state.In addition, in described the 8th step, be included in the little figure coupling part of graphics standard (rule), form step to the outstanding described auxiliary pattern of the length direction of this figure.
According to exposed mask of the present invention and manufacture method thereof, be divided into after at least two masks by being exposed mask graph that substrate will expose semiconductor wafer etc. same, judge annular problem and blade problem in each mask, and when the problem of generation, carry out the mask figure correction of moving, distributing partly, thereby can eliminate annular problem and blade problem reliably as main cause.Thus, the polylith mask of formation does not have annular problem and blade problem, can form high-quality exposed mask.In addition, after eliminating annular problem and blade problem, by each mask is carried out the judgement of length-width ratio problem, and when having problems, the mask as main cause is partly moved, distributes, can eliminate the length-width ratio problem in each mask.And, forming auxiliary pattern by figure to each mask, connectivity problem between the figure in the time of can eliminating each figure that connects each mask can carry out optimum exposure to being exposed the mask graph that will carry out described exposure on the substrate.
Fig. 1 is the flow chart of explanation manufacturing step of the present invention.
Fig. 2 is the flow chart of explanation manufacturing step details of the present invention.
Fig. 3 is the figure of expression by mask graph one example of the exposed mask of the present invention's manufacturing.
Fig. 4 is the figure of explanation figure path and graphic width.
Fig. 5 is that expression is carried out the state diagram that figure is cut apart according to graphics standard.
Fig. 6 is the figure that the figure of the annular problem of expression elimination is cut apart example.
Fig. 7 is the figure that the figure of expression elimination blade problem is cut apart example.
Fig. 8 is the figure that the mask graph of annular problem and blade problem is eliminated in expression.
Fig. 9 is the illustration that the figure of expression elimination length-width ratio problem is cut apart.
Figure 10 is another illustration that the figure of expression elimination length-width ratio problem is cut apart.
Figure 11 is the figure of connectivity problem and auxiliary pattern between the explanation figure.
Figure 12 is the figure of each figure example of final two masks that obtain of expression.
Figure 13 is another illustration that expression is divided into mask graph two masks.
Figure 14 is the figure that expression is divided into mask graph the situation that the is not suitable for example under two mask situations.
Figure 15 is the illustration of cutting apart of the expression situation that is not suitable for of eliminating Figure 10.
Figure 16 is the profile of template mask one example.
Figure 17 is the figure that expression has the figure of annular problem and blade problem.
Below, with reference to accompanying drawing embodiments of the invention are described.Fig. 2 is a detail flowchart of representing the manufacture method of exposed mask of the present invention by process sequence.Mask graph example with reference to graphics shape shown in Figure 3 illustrates this flow chart.At first, in the source and drain areas 102 that on semiconductor wafer 101, forms, under the state that prolongs on the Y direction, the mask graph P00 of Fig. 3 is arranged in parallel on directions X at the gate patterns that is used to form MOS transistor TR.One end of above-mentioned each gate patterns 103 is extended to the extrinsic region 104 of the PN junction of formed formation diode D on above-mentioned semiconductor wafer 101.In addition, dispose Y direction connecting wiring 105 abreast with above-mentioned gate patterns 103.And above-mentioned each gate patterns 103 interconnects by an end and the directions X connecting wiring 106,107 that extends on the pars intermedia directions X, and another directions X connecting wiring 107 also is connected to the described Y direction connecting wiring 105 in this end.In addition, in above-mentioned directions X connecting wiring 106,107, be provided with the welding disk 108 that is used to carry out with the wide rectangular graph of the outer upper strata wiring of figure or the outside formation width that is connected of connecting up in a plurality of places.
Exposed mask for the mask graph P00 that is used to template mask manufacturing shown in Figure 16 expose such, the data (hereinafter referred to as graph data) of aforementioned mask figure P00 are taken into computer, in this computer, carry out the design of the mask graph of the reality that on mask, forms.At first, in the step S101 of Fig. 2, judge annular problem, blade problem, the length-width ratio problem of in aforementioned mask figure P00, whether taking place.When carrying out this judgement, from the graph data of aforementioned mask figure P00, extract the coordinate of each visuals, this coordinate from ± directions X process ± Y direction zone is a consecutive hours, just thinks the annular problem that produced.In addition, though from this coordinate ± place in directions X process ± Y direction zone is cut off under the situation, betwixt under little situation, also thinks the blade problem that taken place.And, even should have under the situation in a plurality of places under the cut-out situation, with the length of continuous visuals relatively, under this little at interval situation, also think the length-width ratio problem that takes place.Under the situation of Fig. 3, on gate patterns 103 and Y direction connecting wiring 105 and directions X connecting wiring 106,107, produce annular problem and blade problem.Have again, do not producing under the situation of these problems, owing to this graphics shape can be adopted as original mask graph, thus needn't the mask correction figure, do not carry out later correction (S103).
In above-mentioned steps S101, when being judged to be the annular problem of generation, blade problem, length-width ratio problem, carrying out graphics standard and extract, compare with threshold value (S102).Wherein, graphics standard when cutting apart with adjacent figure portion required border, is equivalent to the graphic width of this each figure portion of cutting apart at each figure that will constitute aforementioned mask figure P00, and this graphic width and threshold value as preset value are compared.Wherein, described graphic width refers to the narrow dimension of figure, for example, shown in Fig. 4 (a), under the situation that forms rectangular figure P101, the length L p of expression short side direction.In addition, not under the rectangular figure situation, for example, under the situation of the oblique line figure P102 shown in Fig. 4 (b), expression makes this figure rotation, the length L p of the directions X of the figure P102 ' when oblique line is converted to vertical direction.In addition, for above-mentioned graphic width being divided into big graphic width and little graphic width, above-mentioned threshold value is redefined for suitable value.Then, with the graphics standard more than the threshold value, be that the visuals of graphic width is fitted on (S201) among the mask A, the visuals of graphics standard that will be littler than threshold value is fitted on (S301) among the mask B.Thus, under the situation of the mask graph P00 of Fig. 3, as shown in Figure 5, the figure that constitutes welding disk 108 is assigned among the mask A as the P11 of figure portion, P12, P13, and the P21～P33 of figure portion that is equivalent to gate patterns 103, directions X connecting wiring 106,107, Y direction connecting wiring 106 respectively is assigned among the mask B.
Then, in step S202, S302,, judge annular problem, the blade problem of whether producing to the mask graph of being formed by the figure portion that distributes among each mask A, the mask B.The judgement of annular problem and blade problem is undertaken by the method identical with step S101.When mask A, mask B do not produce each problem, be transferred to the judgement of the length-width ratio of step S208 described later, S308.To this, in at least one of mask A, mask B, still take place under the situation of annular problem, blade problem (S104), in the mask of the problem of generation, extract as the figure portion that this problem principal element takes place, it is moved in other the mask, be assigned to the figure correction (S203, S303) in other mask.
When the figure correction of this step S203, S303, the border that can change figure portion.For example, under the situation that produces annular problem, as shown in Figure 6, figure portion is cut apart on directions X or Y direction, made length-width ratio (L2/L1) as the ratio of the Y size L1 of cutting apart the mask part that is produced by this situation and X size L2 become value near " 1 ".That is, be under the rectangular situation in the zone of looping, on the direction on the long limit of crosscut, introduce cut-off rule and cut apart.In addition, under the situation that the blade problem takes place, as shown in Figure 7, be under the rectangular situation in the zone that constitutes blade, on the direction on the long limit of crosscut, introduce cut-off rule and cut apart.Like this, by cutting apart, help eliminating the length-width ratio problem in the subsequent step.
By carrying out to so annular problem, the figure correction of blade problem, for example, in the mask graph example of Fig. 3, in the part of the (a) and (b) of the mask B of Fig. 5, (c), produce the blade problem, so will move as the P21 of figure portion, P22, the P29～P31 of the directions X of these main causes and be assigned to mask A, mask will be revised.In this case, suppose in mask A, also to produce under the situation of annular problem or blade problem, will move as the figure portion of this problem main cause and be assigned to mask B, figure is revised.Thus, as shown in Figure 8, carry out the figure correction of mask A, B.
Then, in step S204, S304, mask A, mask B to the distribution of the figure portion by is separately revised judge annular problem, the blade problem of whether producing once more.When mask A, mask B do not produce above-mentioned each problem, be transferred to the judgement of the length-width ratio of step S208 described later, S308.To this, at least one of mask A, mask B, still take place to make cycle values loop be "+1 " back (S205, S305) under the situation of annular problem, blade problem (S105) as variable, carry out the step of above-mentioned steps S203, S303 once more.Wherein, the initial value of cycle values loop is ' 0 '.Then, the same with the step of front, the local figure portion that has problems that extracts the mask A, the B that have problems moves it among mask B, the A that is assigned to other.Then, in step S204, S304, carry out the judgement of annular problem, blade problem once more.
Carry out above processing repeatedly, annular problem, blade problem in eliminating mask A, B.Then, after these problems of elimination, be transferred to the judgement that step S208, S308 carry out depth-width ratio.On the other hand, loop becomes ' 4 ' until cycle values, promptly, even carrying out 4 correction and judgements more again, when problem is not eliminated yet (S206, S306), prepare the new mask C different with mask A, B, the visuals that mask A, B is each had the problem place is extracted out from mask A, B, problematic visuals is moved be assigned to (S207, S307) among the new mask C.By mobile and distribution, almost can both eliminate annular problem and blade problem in all cases to mask C.Then, mask graph is cut apart constituted mask A, B, three masks of C.
Then, in step S208, S308, each mask A, B are judged the length-width ratio problem that whether takes place.In the judgement of length-width ratio problem, carry out according to the method identical with step S101.Take place under the situation of annular problem, blade problem at least one of mask A, B, extract the figure in the place that the mask of generation problem has problems out, carry out it is moved, is assigned to figure correction (S209, S309) in another mask.For example, Fig. 9 is illustrated under the situation that has length-width ratio among the mask A, to become figure P202 and P203 by extracting out to unplug between an adjacent figure as a plurality of parallel figure P201 that produces the length-width ratio main cause, one of this figure that unplugs P203 is moved and is assigned among the mask B every one.Perhaps, as shown in figure 10, to be formed on as a plurality of parallel figure P201 of the length-width ratio main cause that produces mask A after partition graph P204, the P205 cut apart on the length direction separately, the P206, adjacent partition graph P204, P205, P206 mutually moved and be assigned among the mask B.Have again, connect in each visuals of cutting apart in this case, form auxiliary pattern Ps described later.
In addition, when the length-width ratio problem does not take place, and after in step S209, S309, the length-width ratio problem being carried out the figure correction, in step S210, S310, once more mask A, the B that revises respectively judged annular problem, the blade problem of whether taking place.When new annular problem, blade problem take place, cancel the figure correction among step S209, the S309, turn back to original state (S211, S311).That is, make that the elimination of annular problem and blade problem is preferential.Have, this situation of cancelling the figure correction takes place in fact hardly again.Especially under the situation that forms new mask C, when producing the length-width ratio problem, as long as will move among the mask C as the visuals of this problem main cause and carry out the figure correction, then hardly annular problem and blade problem can take place once more.
Therefore, in step S212, S312, judge whether there is connectivity problem between figure.For example, under the situation of Fig. 8, locate, can carry out the connection in the little figure portion of graphics standard at (A), (B).In this connection, as shown in figure 11, for example, if connected visuals produces location dislocation on directions X, be that the little figure P1 of graphics standard is connected with the big figure P2 of graphics standard in this figure (a1), thereby be difficult to take place the bad connection that the dislocation because of directions X causes, but the bad connection that the dislocation because of the Y direction causes takes place easily.In addition, this figure (b1) connects between little figure P1 of graphics standard and the P3, thereby is difficult to take place the bad connection that the dislocation because of directions X causes, but the bad connection that the dislocation because of the Y direction causes takes place easily.Have, under situation about connecting between little figure P1 of the such graphics standard of this figure (c1) and the P4, directions X still is all to be easy to generate bad connection under the situation of Y direction dislocation again.
Therefore, under the situation that is easy to generate connectivity problem between each figure of Figure 11, form auxiliary pattern at this visuals.The figure end that this auxiliary pattern is little with graphics standard forms to connecting the figure that the other side's figure prolongs Len req.The black part of Figure 11 (a2), (b2), (c2) is divided an example of this auxiliary pattern of expression.In these figure, even taking place on directions X and the Y direction under the situation of dislocation, when the exposure of reality, the auxiliary pattern Ps shown in black part is divided still overlaps on the figure that connects the other side reliably, can eliminate connectivity problem between figure.
By above step, mask graph constitutes under the state that is divided into mask A, two masks of B, perhaps constitutes under the state that is divided into mask A, B, three masks of C.Additional disclosure once, Figure 12 is that the mask graph with Fig. 2 is divided into two masks of mask A, B, and the example that distributes.Then, though be omitted among the figure,, will have with two of the figure graph of a correspondence opening respectively cut apart or three template masks and make as exposed mask according to this figure of cutting apart.Then, by each template mask is arranged on the exposure device, sequentially use each template mask, and overlap and to carry out the exposure of charged particle beams such as electron beam, ion beam while carrying out the mutual alignment, the mask graph that can expect semiconductor wafer, promptly comprise that ring-shaped figure, blade figure and the big mask graph of length-width ratio expose.
As described above, mask graph is divided into two or three masks according to graphics standard after, judge annular problem and blade problem in each mask, and when the problem of generation, by the figure correction is carried out in mask mobile, the distribution partly as main cause, can eliminate annular problem and blade problem reliably.Thus, in two that form or three template mask, there are not ring-shaped figure and blade figure, form high-quality exposed mask.In addition, after eliminating annular problem and blade problem, each mask is judged the length-width ratio problem, and when problem produces,, can eliminate the length-width ratio problem in two or three the template mask by the mask as main cause is partly moved, distributes.And, forming auxiliary pattern by figure to each mask, connectivity problem between the figure in the time of can eliminating each figure that connects two or three masks can be realized the graph exposure to the best of semiconductor wafer.
Have again, in above-mentioned step S207, S307, even use new mask C, can not get rid of generation and not eliminate the possibility of annular problem, blade problem condition, but in this case, as mask D, E etc., also can cut apart and constitute more mask, but in fact constitute two mask A, B by cutting apart, almost can both achieve the goal in all cases, even under the situation of very special mask graph, just can eliminate each problem by cutting apart three masks of formation, need the situation of formation mask D, E few.
In addition, in above-mentioned steps S209, S309, under the situation of the figure correction of moving, distributing of carrying out figure in order to eliminate the length-width ratio problem, under the situation that annular problem takes place once more, in step S211, S311, former state is returned in this figure correction, but the such situation of in fact few generation.In addition, even under the situation that produces this situation,, just can eliminate the length-width ratio problem reliably by carrying out the distribution of mask C.
Wherein, visuals when the annular problem in will eliminating above-mentioned steps S102 to S201, S301, blade problem is assigned as in the step of mask A, B, can adopt a plurality of, the method for the rectangular block of two certain sizes for example that mask graph are divided into the graphic width that is no more than regulation.For example, in example shown in Figure 13, the figure of ring-type is divided into after foursquare and rectangular, to mutually on directions X or Y direction adjacent piece be marked with different symbol bA, bB, the piece of bA is distributed in mask A, and the piece of bB is distributed in mask B.Thus, because adjacent piece necessarily is assigned to mask A, B on directions X or the Y direction, so can eliminate annular problem and blade problem.So, after cutting apart mask graph and being assigned as mask A, B, much less, carry out the step identical with step S203, S303, just can eliminate connectivity problem between length-width ratio problem and figure.
Wherein, when carrying out the cutting apart of such mask graph, as shown in figure 14, when the adjacent block that will cut apart is assigned as mask A, B, produce the situation that piece bA, bB among each mask A, the B are configured with a contact condition in the bight.If produce such some contact condition, when then forming the figure opening on template mask, the collapse of shape just takes place easily on the figure opening of a contact portion.Such problem is called a contact problems, and producing under the situation of this some contact problems, as shown in figure 15, the change mask graph cut apart direction and cut-off rule, be assigned as under the situation of mask A, B at adjacent block bA, the bB that will cut apart, just do not produce a contact problems.
In addition, though omitted detailed explanation, as prior art,, can adopt the method for elimination length-width ratio problem of the present invention equally on directions X and Y direction for simply figure being cut apart and being formed each mask of two.In this case, when between such two masks of mask A, B, eliminating the length-width ratio problem,, also mask A can be divided into A, C, mask B is divided into B, D if worry to produce annular problem, blade problem once more.
The present invention according to above explanation, after mask graph is assigned as at least two masks, judge annular problem and blade problem in each mask, and when the problem of generation, by the figure correction is carried out in mask mobile, the distribution partly as main cause, can eliminate annular problem and blade problem reliably.Thus, make the polylith mask of formation no longer have annular problem and blade problem, can form high-quality exposed mask.In addition, after eliminating annular problem and blade problem, each mask is carried out the judgement of length-width ratio problem, and when the problem of generation,, can eliminate the length-width ratio problem in each mask by carrying out mobile, distribution as the mask part of main cause.And by each mask graph is formed auxiliary pattern, connectivity problem between the figure in the time of can eliminating each figure that connects each mask can be realized the optimum intersection figure exposure to semiconductor wafer.
Claims (12)
1. exposed mask, by will constitute by a plurality of masks, be arranged on mask graph in each mask and expose respectively and be exposed on the substrate same, to desired mask graph exposure, it is characterized in that set mask graph is made of the figure that the ring-type figure that exists in the needed mask graph, foliaceous figure, figure that length-width ratio is big are cut apart respectively in described each mask.
2. exposed mask as claimed in claim 1 is characterized in that, in the mask graph of described at least one mask, with part that other mask graph is connected in, form to the side-prominent auxiliary pattern of the figure of other mask.
3. exposed mask as claimed in claim 1 or 2 is characterized in that described mask is a template mask, and the mask graph of described mask is the figure opening that is provided with on the photomask substrate that constitutes described template mask.
4. the manufacture method of an exposed mask, it is characterized in that, comprise following each step: first step, on for the mask graph that forms exposed mask, judge whether produce by figure formed the annular problem of ring-type, the part that is surrounded by figure forms the big length-width ratio problem of asperratio of clamping part between foliated blade problem, the figure; Second step being judged to be when producing described ring-type problem or blade problem at least, described mask graph is divided into two figures, and each figure that will cut apart is assigned as two masks of first and second; Third step is judged described annular problem or the blade problem of whether taking place to each figure that distributes in described two masks; The 4th step is being judged to be when at least one problem takes place, and the part of a mask graph is distributed into another mask; The 5th step is being judged to be the whichever mask when described annular problem and blade problem all do not take place, and each figure of each mask is judged the described length-width ratio problem that whether takes place; The 6th step when described length-width ratio problem takes place, is distributed into another mask with the part of a mask graph in being judged to be at least one mask; The 7th step is being judged to be the whichever mask when described length-width ratio problem does not all take place, and judges in the coupling part of the mask graph of described two masks whether produce the bad connection part; And the 8th step, be judged to be when producing described bad connection part, form auxiliary pattern in the coupling part of this figure of a mask at least.
5. the manufacture method of exposed mask as claimed in claim 4, it is characterized in that, in described second step, comprise such step: will constitute each graphic width of a plurality of visuals of described mask graph and the threshold value of regulation and compare, cut apart described a plurality of figure according to the size of its comparative result, and be assigned as described two masks.
6. the manufacture method of exposed mask as claimed in claim 4, it is characterized in that, in described second step, comprise such step: described mask graph is divided into plural fixed block, adjacent piece on directions X or the Y direction is assigned as described two masks.
7. the manufacture method of exposed mask as claimed in claim 6 is characterized in that, when the piece that distributes at described two masks was in a some contact at least one mask, described cut-off rule of described mask graph was cut apart in change.
8. as the manufacture method of wherein any one described exposed mask of claim 4 to 7, it is characterized in that,, comprise such step: repeatedly repeat as described third step and the 4th step, until described annular problem of elimination and blade problem, or until reaching stipulated number.
9. the manufacture method of exposed mask as claimed in claim 8, it is characterized in that, even when described third step and the 4th step repeatedly being repeated to described stipulated number also not eliminating described annular problem and blade problem, the part of described figure is assigned as another the 3rd mask.
10. as the manufacture method of any one described exposed mask in the claim 4 to 9, it is characterized in that, in described the 6th step, when annular problem or blade problem take place once more, original state is returned in the figure distribution of described the 6th step.
11. manufacture method as any one described exposed mask in the claim 5,8,9,10, it is characterized in that, as described the 8th step, comprise such step: in the little figure coupling part of graphics standard, form to the outstanding auxiliary pattern of the length direction of this figure.
12. the manufacture method as any one described exposed mask in the claim 4 to 11 is characterized in that, forms described a plurality of mask by template mask.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000060393A JP3476410B2 (en) | 2000-03-01 | 2000-03-01 | Manufacturing method of exposure mask |
| JP060393/2000 | 2000-03-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1311525A true CN1311525A (en) | 2001-09-05 |
| CN1177352C CN1177352C (en) | 2004-11-24 |
Family
ID=18580719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB01109110XA Expired - Fee Related CN1177352C (en) | 2000-03-01 | 2001-02-26 | Exposure mask and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3476410B2 (en) |
| CN (1) | CN1177352C (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100380583C (en) * | 2002-03-26 | 2008-04-09 | 凸版印刷株式会社 | Method of dividing circuit pattern, method of manufacturing stencil mask, stencil mask and method of exposure |
| CN100380381C (en) * | 2001-12-10 | 2008-04-09 | 凸版光掩膜公司 | Photomask and method for qualifying it with template specification |
| CN102157350A (en) * | 2007-01-11 | 2011-08-17 | 瑞萨电子株式会社 | Manufacturing method for semiconductor device |
| CN105093808A (en) * | 2014-04-22 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Hole layer optical proximity correction method for avoiding large aspect ratio pattern |
| CN105989589A (en) * | 2015-02-09 | 2016-10-05 | 上海微电子装备有限公司 | Mask pattern graying method |
| CN107039281A (en) * | 2011-12-22 | 2017-08-11 | 英特尔公司 | The method of the semiconductor body of semiconductor devices and formation different in width with neck-shaped semiconductor body |
| CN113109992A (en) * | 2020-01-10 | 2021-07-13 | 中芯国际集成电路制造(北京)有限公司 | Pattern correction method and mask manufacturing method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4657646B2 (en) * | 2004-07-30 | 2011-03-23 | ソニー株式会社 | Mask pattern arranging method, mask manufacturing method, semiconductor device manufacturing method, program |
| CN112198754A (en) * | 2020-08-24 | 2021-01-08 | 株洲中车时代半导体有限公司 | Photolithography mask, alignment mark and preparation method thereof, and wet etching method |
-
2000
- 2000-03-01 JP JP2000060393A patent/JP3476410B2/en not_active Expired - Fee Related
-
2001
- 2001-02-26 CN CNB01109110XA patent/CN1177352C/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100380381C (en) * | 2001-12-10 | 2008-04-09 | 凸版光掩膜公司 | Photomask and method for qualifying it with template specification |
| CN100380583C (en) * | 2002-03-26 | 2008-04-09 | 凸版印刷株式会社 | Method of dividing circuit pattern, method of manufacturing stencil mask, stencil mask and method of exposure |
| CN102157350A (en) * | 2007-01-11 | 2011-08-17 | 瑞萨电子株式会社 | Manufacturing method for semiconductor device |
| CN102157350B (en) * | 2007-01-11 | 2013-08-21 | 瑞萨电子株式会社 | Manufacturing method for semiconductor device |
| CN107039281A (en) * | 2011-12-22 | 2017-08-11 | 英特尔公司 | The method of the semiconductor body of semiconductor devices and formation different in width with neck-shaped semiconductor body |
| CN107039281B (en) * | 2011-12-22 | 2021-06-18 | 英特尔公司 | Semiconductor device with necked semiconductor body and method of forming semiconductor bodies of different widths |
| CN105093808A (en) * | 2014-04-22 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Hole layer optical proximity correction method for avoiding large aspect ratio pattern |
| CN105093808B (en) * | 2014-04-22 | 2020-04-14 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method for hole layer for avoiding large length-width ratio pattern |
| CN105989589A (en) * | 2015-02-09 | 2016-10-05 | 上海微电子装备有限公司 | Mask pattern graying method |
| CN105989589B (en) * | 2015-02-09 | 2019-01-18 | 上海微电子装备（集团）股份有限公司 | A kind of mask graph gray processing method |
| CN113109992A (en) * | 2020-01-10 | 2021-07-13 | 中芯国际集成电路制造(北京)有限公司 | Pattern correction method and mask manufacturing method |
| CN113109992B (en) * | 2020-01-10 | 2022-07-19 | 中芯国际集成电路制造(北京)有限公司 | Pattern correction method and mask manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1177352C (en) | 2004-11-24 |
| JP2001244192A (en) | 2001-09-07 |
| JP3476410B2 (en) | 2003-12-10 |
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