CN1303260C - Process for preparing carbon nano tube film through electrophoresis deposition - Google Patents
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Abstract
一种碳纳米管薄膜的电泳沉积制备方法,属纳米材料技术领域,本方法包含碳纳米管的纯化处理和表面修饰、碳纳米管稳定悬浮液的形成、电泳沉积碳纳米管薄膜、薄膜烘干和二次电泳沉积几个步骤。本发明具有生产设备简单、成膜快、薄膜厚度可控、基底形状不受限制等优点,工艺简单,适合大批量生产。A method for preparing a carbon nanotube film by electrophoretic deposition, belonging to the technical field of nanomaterials, the method includes carbon nanotube purification and surface modification, formation of a stable carbon nanotube suspension, electrophoretic deposition of a carbon nanotube film, and film drying and secondary electrophoretic deposition in several steps. The invention has the advantages of simple production equipment, fast film formation, controllable film thickness, unrestricted substrate shape, simple process and is suitable for mass production.
Description
技术领域technical field
本发明涉及碳纳米管薄膜的制备方法,特别是电泳沉积制备方法,属纳米材料技术领域。The invention relates to a preparation method of a carbon nanotube film, in particular to an electrophoretic deposition preparation method, and belongs to the technical field of nanometer materials.
背景技术Background technique
碳纳米管是目前人工制备的一种理想的一维纳米材料,由于本身组成结构的独特性,碳纳米管表现出许多独特的物理性质,在传感器、平板显示器、超级电容器、复合材料等方面得到了广泛的应用。其中,将碳纳米管按照一定规律组成的宏观薄膜结构在应用方面的前景更令人期待。Carbon nanotubes are currently an ideal one-dimensional nanomaterial prepared artificially. Due to their unique composition and structure, carbon nanotubes exhibit many unique physical properties, and are widely used in sensors, flat panel displays, supercapacitors, composite materials, etc. a wide range of applications. Among them, the prospect of the application of the macroscopic film structure composed of carbon nanotubes according to certain rules is more exciting.
目前,碳纳米管薄膜的制备方法主要有直接生长法和后处理法两种。At present, the preparation methods of carbon nanotube films mainly include direct growth method and post-processing method.
直接生长法是利用电弧放电、激光烧蚀、化学气相沉积等制备方法,在一定材料的基底上直接生长碳纳米管薄膜。其优点是碳纳米管的结构、尺寸可以通过工艺条件来调节,而且可以通过基底或者催化剂的图形来实现碳纳米管的图形化;其缺点是需要各种处理方法来改进碳纳米管薄膜的性能、对基底的选择性比较强,而且由于目前工艺条件所限,这些工艺过程大都需要高温条件,因此无法使用低熔点的材料作为基底,例如有机玻璃,这大大限制了碳纳米管薄膜在传感器、场发射显示器件等方面的应用。同时,由于高温条件会破坏微电子电路,因此导致了碳纳米管薄膜的制备工艺与微电子工艺的不兼容性。The direct growth method is to use arc discharge, laser ablation, chemical vapor deposition and other preparation methods to directly grow carbon nanotube films on a certain material substrate. The advantage is that the structure and size of carbon nanotubes can be adjusted through process conditions, and the patterning of carbon nanotubes can be realized through the graphics of the substrate or catalyst; the disadvantage is that various processing methods are required to improve the performance of carbon nanotube films , The selectivity to the substrate is relatively strong, and due to the limitation of the current process conditions, most of these processes require high temperature conditions, so it is impossible to use low melting point materials as the substrate, such as plexiglass, which greatly limits the use of carbon nanotube films in sensors, Field emission display devices and other applications. At the same time, because the high temperature condition will destroy the microelectronic circuit, it leads to the incompatibility between the preparation process of the carbon nanotube film and the microelectronic process.
后处理法是在前面提到的几种方法制备出碳纳米管的基础上,对碳纳米管进行修饰和性能改进,然后通过一定的后处理工艺得到统一、均匀的碳纳米管薄膜。后处理法最大的特点是对基底的要求不高,避免了工艺中出现高温,有可能实现与微电子工艺的兼容。目前常见的后处理法制备碳纳米管薄膜的方法包括喷涂法、蒸发法等,这些方法虽然工艺简单,但成膜速度较慢,而且薄膜厚度较难控制,不适合大批量、自动化生产,工业推广实现较难。The post-treatment method is to modify and improve the performance of carbon nanotubes on the basis of the preparation of carbon nanotubes by the above-mentioned methods, and then obtain a uniform and uniform carbon nanotube film through a certain post-treatment process. The biggest feature of the post-processing method is that it does not require high substrates, avoids high temperatures in the process, and may achieve compatibility with microelectronics processes. At present, common post-processing methods for preparing carbon nanotube films include spraying, evaporation, etc. Although these methods are simple in process, the film forming speed is relatively slow, and the film thickness is difficult to control, which is not suitable for mass production, automatic production, industrial Promotion is difficult.
电泳沉积是指依靠电场的作用,悬浮液中的带电固体微粒发生定向移动,并沉积在具有相反电荷和具有一定形状电极上的现象。它包括电泳和沉积两个步骤:电泳又叫电迁移,指带电粒子在一定介质中因电场作用而发生定向运动的物理化学现象;沉积是指颗粒聚集成膜或者块体。目前,电泳沉积在涂装技术方面的应用研究非常深入,以其膜厚均匀、外观良好、无环境危害、操作安全、工序自动化、适用于流水化生产等特点,在汽车、家电、轻工、金属等行业得到了非常广泛的应用。Electrophoretic deposition refers to the phenomenon that the charged solid particles in the suspension move in a directional manner and deposit on electrodes with opposite charges and a certain shape under the action of an electric field. It includes two steps of electrophoresis and deposition: electrophoresis, also known as electromigration, refers to the physical and chemical phenomenon of directional movement of charged particles in a certain medium due to the action of an electric field; deposition refers to the aggregation of particles into a film or block. At present, the research on the application of electrophoretic deposition in coating technology is very in-depth. With its characteristics of uniform film thickness, good appearance, no environmental hazards, safe operation, automatic process, and suitable for streamlined production, it is widely used in automobiles, home appliances, light industry, Metal and other industries have been widely used.
目前,利用电泳沉积进行碳纳米管薄膜的制备面临的主要问题是薄膜厚度可控性差,薄膜均匀性差等。At present, the main problems in the preparation of carbon nanotube films by electrophoretic deposition are poor controllability of film thickness and poor film uniformity.
发明内容Contents of the invention
本发明的目的是提供一种可得到薄膜厚度均匀的碳纳米管薄膜的制备方法。本方法涉及一种利用电泳沉积制备碳纳米管薄膜的方法,包括以下五个步骤:The purpose of the present invention is to provide a preparation method for obtaining a carbon nanotube film with uniform film thickness. The method relates to a method for preparing a carbon nanotube film by electrophoretic deposition, comprising the following five steps:
1.碳纳米管的纯化处理和表面修饰1. Purification and surface modification of carbon nanotubes
将已经制备出的碳纳米管与浓度为30%的过氧化氢溶液混合,超声振荡10~120分钟后过滤出碳纳米管;使用二硫化碳洗涤碳纳米管3~5次;使用无水甲醇洗涤碳纳米管3~5次;烘干;将上述碳纳米管与浓酸混合后在70~150℃回流加热10~120分钟,所说的浓酸是指98%的浓硫酸、69%浓硝酸及两者的混合酸这三种中的任一种;过滤出碳纳米管;使用去离子水洗涤碳纳米管3~10次并烘干;Mix the prepared carbon nanotubes with 30% hydrogen peroxide solution, filter out the carbon nanotubes after ultrasonic oscillation for 10-120 minutes; use carbon disulfide to wash the carbon nanotubes 3-5 times; use anhydrous methanol to wash the carbon nanotubes Nanotubes 3 to 5 times; drying; the above-mentioned carbon nanotubes are mixed with concentrated acid and heated at 70 to 150° C. for 10 to 120 minutes under reflux. Said concentrated acid refers to 98% concentrated sulfuric acid, 69% concentrated nitric acid and Any one of the three mixed acids of the two; filter out the carbon nanotubes; wash the carbon nanotubes with deionized water for 3 to 10 times and dry them;
2.碳纳米管稳定悬浮液的形成2. Formation of stable suspension of carbon nanotubes
将上述碳纳米管分散在水或者有机溶剂中,所说的有机溶剂可以是乙醇、丙酮或者是它们的混合物中的任一种;加入无机盐,所说的无机盐可以是氯化镁、硝酸镁、氯化铝、硝酸铝中的任一种;超声振荡10~120分钟,静置10~120分钟,形成各种浓度的稳定的悬浮状电泳液;Dispersing the above-mentioned carbon nanotubes in water or an organic solvent, said organic solvent can be any one in ethanol, acetone or their mixture; adding inorganic salt, said inorganic salt can be magnesium chloride, magnesium nitrate, Any one of aluminum chloride and aluminum nitrate; ultrasonic oscillation for 10 to 120 minutes, and standing for 10 to 120 minutes to form a stable suspension electrophoretic solution of various concentrations;
3.电泳沉积碳纳米管薄膜3. Electrophoretic deposition of carbon nanotube films
以生长薄膜所需的基底作为电泳池的阴极,所说的阴极可以是任何在电泳过程中不被腐蚀的导电材料,也可以是电泳过程中不被腐蚀的绝缘体或者半导体表面具有一定图形的导电材料;以金属电极作为阳极,所说的阳极可以是铂电极、金电极、铜电极中的任意一种;以碳纳米管悬浮液作为电泳液;在直流10~100伏特电压下,根据所需薄膜厚度电泳30秒~20分钟;The substrate required to grow the film is used as the cathode of the electric pool. The cathode can be any conductive material that is not corroded during the electrophoresis process, or an insulator that is not corroded during the electrophoresis process or a conductive material with a certain pattern on the semiconductor surface. Materials; metal electrodes are used as anodes, and the anodes can be any one of platinum electrodes, gold electrodes, and copper electrodes; carbon nanotube suspensions are used as electrophoretic fluid; under DC 10-100 volts, according to the required Film thickness electrophoresis for 30 seconds to 20 minutes;
4.薄膜烘干4. Film drying
将阴极得到的产物连同阴极在25℃~200℃下烘干1~120分钟;Dry the product obtained from the cathode together with the cathode at 25°C to 200°C for 1 to 120 minutes;
5.二次电泳5. Secondary electrophoresis
将阴极接着放入上述电泳池中进行二次电泳;30秒~20分钟后再将阴极得到的产物取出烘干,即可得到碳纳米管薄膜。The cathode is then put into the above electric pool for secondary electrophoresis; after 30 seconds to 20 minutes, the product obtained from the cathode is taken out and dried to obtain a carbon nanotube film.
本发明较好的实施条件是:The preferred implementation conditions of the present invention are:
碳纳米管直径小于80纳米。Carbon nanotubes are less than 80 nanometers in diameter.
碳纳米管长度小于30微米。Carbon nanotubes are less than 30 microns in length.
浓酸是由98%浓硫酸与69%浓硝酸按体积比3∶1混合而成的。Concentrated acid is formed by mixing 98% concentrated sulfuric acid and 69% concentrated nitric acid in a volume ratio of 3:1.
加热回流时间小于30分钟。Heating to reflux time is less than 30 minutes.
分散溶剂是无水乙醇。The dispersing solvent is absolute ethanol.
无机盐是氯化镁或者硝酸镁。The inorganic salt is magnesium chloride or magnesium nitrate.
阳极是铂电极。The anode is a platinum electrode.
电泳电压是50~80伏直流电。The electrophoresis voltage is 50-80 volts direct current.
电泳时间为1~20分钟。The electrophoresis time is 1 to 20 minutes.
晾干或烘干温度为10~50℃。Drying or drying temperature is 10 ~ 50 ℃.
晾干或烘干时间为1~30分钟。Drying or drying time is 1 to 30 minutes.
二次电泳时间为1~20分钟。The second electrophoresis time is 1-20 minutes.
本发明的特点:Features of the present invention:
1.本发明所提供的方法得到的碳纳米管薄膜与其它已有方法相比,具有制作周期短、碳纳米管薄膜均匀致密、碳纳米管可以预先进行修饰处理等特点;1. Compared with other existing methods, the carbon nanotube film obtained by the method provided by the present invention has the characteristics of short production cycle, uniform and compact carbon nanotube film, and the carbon nanotube can be modified in advance;
2.本发明可以通过改变沉积电压、沉积时间来控制碳纳米管薄膜的厚度;2. The present invention can control the thickness of the carbon nanotube film by changing the deposition voltage and deposition time;
3.本发明可以通过改变电极图案来控制碳纳米管薄膜的图形化;3. The present invention can control the patterning of the carbon nanotube film by changing the electrode pattern;
4.本发明所采用的电泳沉积方法实施方便简单,对仪器要求不高,而且沉积过程易于外部调控;4. The electrophoretic deposition method adopted in the present invention is convenient and simple to implement, does not require high equipment, and the deposition process is easy to external control;
5.本发明具有电泳时间短,电泳过程可以在多种溶剂中进行,特别是可以在水相和常用有机溶剂中进行,对环境污染小,且价格便宜,适用于工业化生产。5. The present invention has short electrophoresis time, and the electrophoresis process can be carried out in various solvents, especially in water phase and common organic solvents, has little environmental pollution and is cheap, and is suitable for industrial production.
本发明具有生产设备简单、成膜快、薄膜厚度可控、用于沉积薄膜的基底形状不受限制等诸多优点,而且加工工艺简单,适合大批量、自动化生产,易于工业推广应用。The invention has many advantages such as simple production equipment, fast film formation, controllable film thickness, unrestricted substrate shape for depositing films, etc., simple processing technology, suitable for large-scale and automatic production, and easy for industrial popularization and application.
具体实施方式Detailed ways
实施例1Example 1
1.选用纳米聚团技术制备的多壁碳纳米管黑色粉体,纯度大于80%,内径2~30纳米,外径5~60纳米,聚团大小几十微米。将该碳纳米管与30%的过氧化氢溶液混合,超声振荡10分钟后过滤;使用二硫化碳反复洗涤碳纳米管三次;使用无水甲醇反复洗涤碳纳米管三次;烘干。将上述碳纳米管与75毫升98%浓硫酸、25毫升69%浓硝酸混合,在75℃回流加热10分钟,过滤出碳纳米管;使用去离子水洗涤碳纳米管并烘干。1. The black powder of multi-walled carbon nanotubes prepared by nano-agglomeration technology has a purity greater than 80%, an inner diameter of 2-30 nanometers, an outer diameter of 5-60 nanometers, and an aggregate size of tens of microns. The carbon nanotubes are mixed with 30% hydrogen peroxide solution, ultrasonically oscillated for 10 minutes and then filtered; the carbon nanotubes are repeatedly washed three times with carbon disulfide; the carbon nanotubes are repeatedly washed three times with anhydrous methanol; and dried. The above carbon nanotubes were mixed with 75 ml of 98% concentrated sulfuric acid and 25 ml of 69% concentrated nitric acid, heated under reflux at 75° C. for 10 minutes, and the carbon nanotubes were filtered out; the carbon nanotubes were washed with deionized water and dried.
2.称取上述碳纳米管50毫克,加入100毫升无水乙醇和512毫克氯化镁,超声振荡20分钟,静置30分钟,形成黑色、稳定的碳纳米管悬浮液。2. Weigh 50 mg of the above-mentioned carbon nanotubes, add 100 ml of absolute ethanol and 512 mg of magnesium chloride, ultrasonically oscillate for 20 minutes, and stand for 30 minutes to form a black, stable suspension of carbon nanotubes.
3.将上述碳纳米管悬浮液作为电泳液,并以图形化金的硅片作为电泳池的阴极,以金片作为电泳池的阳极;阴极、阳极之间相对间距为4厘米;在电泳池的阴极和阳极之间加50伏特的直流电压,4分钟后将阴极取出。3. Use the above-mentioned carbon nanotube suspension as the electrophoretic fluid, and use the patterned gold silicon wafer as the cathode of the electric swimming pool, and use the gold sheet as the anode of the electric swimming pool; the relative distance between the cathode and the anode is 4 cm; in the electric swimming pool A DC voltage of 50 volts was applied between the cathode and the anode, and the cathode was taken out after 4 minutes.
4.将上述阴极在常温下静置2分钟30秒;4. Stand the above cathode at room temperature for 2 minutes and 30 seconds;
5.再次将阴极放入电泳池中,加50伏特的直流电压保持1分钟;将阴极取出,在常温下晾干。5. Put the cathode into the battery pool again, apply a DC voltage of 50 volts for 1 minute; take out the cathode and dry it at room temperature.
结果可以得到以硅片为基底生长的黑色、均匀的、图形化的碳纳米管薄膜。测量结果显示,薄膜边缘平均厚度约为87微米。As a result, a black, uniform and patterned carbon nanotube film grown on a silicon wafer can be obtained. The measurement results showed that the average thickness of the edge of the film was about 87 microns.
实施例2Example 2
1.选用纳米聚团技术制备的多壁碳纳米管黑色粉体,纯度大于80%,内径2~30纳米,外径5~60纳米,聚团大小几十微米。将该碳纳米管与30%的过氧化氢溶液混合,超声振荡10分钟后过滤;使用二硫化碳反复洗涤碳纳米管三次;使用无水甲醇反复洗涤碳纳米管三次;烘干。将上述碳纳米管与75毫升98%浓硫酸、25毫升69%浓硝酸混合,在75℃回流加热10分钟,过滤出碳纳米管;使用去离子水洗涤碳纳米管并烘干。1. The black powder of multi-walled carbon nanotubes prepared by nano-agglomeration technology has a purity greater than 80%, an inner diameter of 2-30 nanometers, an outer diameter of 5-60 nanometers, and an aggregate size of tens of microns. The carbon nanotubes are mixed with 30% hydrogen peroxide solution, ultrasonically oscillated for 10 minutes and then filtered; the carbon nanotubes are repeatedly washed three times with carbon disulfide; the carbon nanotubes are repeatedly washed three times with anhydrous methanol; and dried. The above carbon nanotubes were mixed with 75 ml of 98% concentrated sulfuric acid and 25 ml of 69% concentrated nitric acid, heated under reflux at 75° C. for 10 minutes, and the carbon nanotubes were filtered out; the carbon nanotubes were washed with deionized water and dried.
2.称取上述碳纳米管50毫克,加入100毫升无水乙醇和512毫克氯化镁,超声振荡20分钟,静置30分钟,形成黑色、稳定的碳纳米管悬浮液。2. Weigh 50 mg of the above-mentioned carbon nanotubes, add 100 ml of absolute ethanol and 512 mg of magnesium chloride, ultrasonically oscillate for 20 minutes, and stand for 30 minutes to form a black, stable suspension of carbon nanotubes.
3.将上述碳纳米管悬浮液作为电泳液,并以图形化金的硅片作为电泳池的阴极,以金片作为电泳池的阳极;阴极、阳极之间相对间距为1厘米;在电泳池的阴极和阳极之间加90伏特的直流电压,4分钟后将阴极取出。3. Use the above-mentioned carbon nanotube suspension as the electrophoretic fluid, and use the patterned gold silicon wafer as the cathode of the electric swimming pool, and use the gold sheet as the anode of the electric swimming pool; the relative distance between the cathode and the anode is 1 cm; in the electric swimming pool A DC voltage of 90 volts was applied between the cathode and the anode, and the cathode was taken out after 4 minutes.
4.将上述阴极在常温下静置2分钟;4. Stand the above-mentioned cathode at room temperature for 2 minutes;
5.再次将阴极放入电泳池中,加50伏特的直流电压保持1分钟;将阴极取出,在常温下晾干。5. Put the cathode into the battery pool again, apply a DC voltage of 50 volts for 1 minute; take out the cathode and dry it at room temperature.
结果可以得到以硅片为基底生长的黑色、均匀的、图形化的碳纳米管薄膜。测量结果显示,薄膜边缘平均厚度约为245微米。As a result, a black, uniform and patterned carbon nanotube film grown on a silicon wafer can be obtained. Measurements showed that the average thickness of the film edge was about 245 microns.
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