CN1300634C - Photomask and method for forming polysilicon layer using same - Google Patents
Photomask and method for forming polysilicon layer using same Download PDFInfo
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- CN1300634C CN1300634C CNB2005100041619A CN200510004161A CN1300634C CN 1300634 C CN1300634 C CN 1300634C CN B2005100041619 A CNB2005100041619 A CN B2005100041619A CN 200510004161 A CN200510004161 A CN 200510004161A CN 1300634 C CN1300634 C CN 1300634C
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 33
- 229920005591 polysilicon Polymers 0.000 title claims description 55
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000002425 crystallisation Methods 0.000 claims description 21
- 230000008025 crystallization Effects 0.000 claims description 20
- 239000013078 crystal Substances 0.000 description 62
- 230000005855 radiation Effects 0.000 description 37
- 238000010586 diagram Methods 0.000 description 16
- 239000010409 thin film Substances 0.000 description 5
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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Abstract
A photomask comprises a first region, a second region, a third region and a fourth region. The first area has a plurality of first strip-shaped opaque regions and a plurality of first strip-shaped gaps which are parallel to each other and are arranged in a staggered manner. The second area has several second strip-shaped opaque regions and several second strip-shaped gaps, which are parallel and staggered, and the second and first strip-shaped gaps are parallel to each other. The third area is arranged between the first area and the second area and is provided with a plurality of third strip-shaped opaque areas and a plurality of third strip-shaped gaps which are parallel and staggered, and the third strip-shaped gaps are vertical to or inclined at an angle relative to the first strip-shaped gaps. The fourth area is arranged between the second area and the third area, and is provided with a plurality of fourth strip-shaped opaque areas and a plurality of fourth strip-shaped gaps which are parallel to each other and are arranged in a staggered way, and the fourth strip is parallel to the third strip-shaped gaps. The method for forming the polycrystalline silicon layer comprises the steps of forming an amorphous silicon layer on a substrate; then, continuous lateral growth is performed by using a mask.
Description
Technical field
The present invention is about a kind of light shield and use the method that it forms polysilicon layer, and the particularly relevant method that can be used for the light shield of continuously lateral crystal growing technology and use its formation polysilicon layer.
Background technology
In the epoch now that development in science and technology is maked rapid progress, flat-panel screens is used on the portable electronic devices such as notebook, personal digital assistant and mobile phone widely.Wherein the LTPS panel is with laser tempering (Laser Annealing) method the a-Si layer to be transformed into polysilicon layer, promotes the electron mobility (electron mobility) of thin film transistor (TFT) significantly.Therefore, (integratedcircuit IC) can be integrated on the LTPS panel, does not need extra board design, helps to increase the flexibility ratio of panel and circuit design for panel drive circuit and integrated circuit.So the LTPS panel will become the display panel that has potentiality.In addition, the polysilicon crystal technology comprises continuous silicone crystal boundary (continuous grain silicon at present, CGS), long brilliant (the sequential lateral solidification of continuously lateral, SLS), continuous wave laser transverse crystallizing (CW-laser lateral crystallization, CLC) and selectivity expansion of laser light crystallization (selectivelyenlarging laser X ' tallization, SELAX) technology etc. will be that example explains with the continuously lateral crystal growing technology at this.
The continuously lateral crystal growing technology is to utilize the light shield with photic zone and light tight district, defines the zone that laser will shine the amorphous silicon layer on the substrate.The amorphous silicon layer that corresponds to the part of photic zone will be become the molten state amorphous silicon by lf, and the remaining amorphous silicon layer that corresponds to light tight district will be by lf, and the temperature of molten state amorphous silicon will be higher than the temperature of remaining amorphous silicon layer.By formed thermograde between molten state amorphous silicon and the remaining amorphous silicon layer, make the molten state amorphous silicon to become a polysilicon layer by the center side direction crystal growing of the past molten state amorphous silicon of remaining amorphous silicon layer.Then, moving substrate or light shield make the photic zone of light shield correspond to the part zone of remaining polysilicon layer, and above-mentioned continuously crystallisation step is long brilliant to carry out continuously lateral.But this continuously lateral crystal growing technology is in the process that forms polysilicon layer, and branch's crystal boundary (sub-grainboundary) can be created in the polysilicon layer, to reduce the internal strain that thermal stress was produced.Because therefore the quantity and the electron mobility relation of being inversely proportional to of branch's crystal boundary need reduce the generation of this type of crystal boundary, to improve the electron mobility of polysilicon layer as far as possible.
The structural design of utilizing the light shield zone to reduce the quantity of branch's crystal boundary at present has several, that is for example disclosed for United States Patent (USP) notification number US 2003/0088848A1 is used for the technical light shield of SLS, its structure as shown in Figure 1: light shield 10 comprises a light shield body 11 and is formed at first area 12, second area 13, the 14 and the 4th zone 15, the 3rd zone in the light shield body 11.First area 12 has a plurality of first strip gap 12a and a plurality of first strips light tight district 12b, and the first strip gap 12a is parallel with the light tight district of first strip 12b and is staggered.Second area 13 has a plurality of second strip gap 13a and a plurality of second strips light tight district 13b, and the second strip gap 13a is parallel with the light tight district of second strip 13b and is staggered that the second strip gap 13a is vertical with the first strip gap 12a.The 3rd zone 14 and has a plurality of the 3rd strip gap 14a and a plurality of the 3rd strips light tight district 14b between first area 12 and second area 13, the 3rd strip gap 14a is parallel with the light tight district of the 3rd strip 14b and is staggered.The 3rd strip gap 14a is parallel with the first strip gap 12a, and corresponding to the light tight district of first strip 12b, the width of the 3rd strip gap 14a and the first strip gap 12a is the width that is slightly larger than first strip light tight district 12b and the 3rd light tight district 14b respectively.The 4th zone 15 and has a plurality of the 4th strip gap 15a and the light tight district of a plurality of strip 15b between second area 13 and the 3rd zone 14, the 4th strip gap 15a is parallel with the light tight district of the 4th strip 15b and is staggered.The 4th strip gap 15a is parallel with the second strip gap 13a, and the width of the light tight district of the second strip gap 13a and the 4th strip 15a is the width that is slightly larger than the 4th strip light tight district 15b and the light tight district of second strip 13b respectively.
As shown in Figure 2, light shield 10 is to be displaced on each scope of amorphous silicon layer 16 along direction 17a～17d respectively, for laser each scope is crystallized into polysilicon.At first, light shield 10 is respectively to be end to end mode with first area 12 and second area 13, moves along direction 17a, and for laser radiation first scope, and continuously lateral crystallizes into polysilicon.Then, light shield 10 is respectively to be end to end mode with second area 13 and first area 12, moves along direction 17b, and for laser radiation second scope, and continuously lateral crystallizes into polysilicon.Then, light shield 10 moves along direction 17c, and for laser radiation the 3rd scope, and continuously lateral crystallizes into polysilicon.Then, light shield 10 moves along direction 17d, and for laser radiation the 3rd scope, and continuously lateral crystallizes into polysilicon.The rest may be inferred, and light shield 10 will be with the move mode of S type scanning amorphous silicon layer 16, for laser each scope of amorphous silicon layer 16 crystallized into polysilicon.At light shield 10 during with the move mode of S type scanning amorphous silicon layer 16, the bearing of trend of the first strip gap 12a and the 3rd strip gap 14a is parallel or vertical with direction 17a～17d, and bearing of trend and the direction 17a～17d of the second strip gap 13a and the 4th strip gap 15a are perpendicular or parallel.
In the process of the odd number row scope of light shield 10 scanning amorphous silicon layers 16, the pairing laser radiation of 14a zone, the 3rd strip gap is to interlock with the pairing crystal region of the first strip gap 12a and the part overlapping, and the pairing laser radiation of 13a zone, the second strip gap is staggered and part overlapping with the pairing crystal region of the 4th strip gap 15a.So, the 4th zone 15 and second area 13 are in order to eliminate because of first area 12 and the 3rd zone 14 branch's crystal boundaries that produce, the 3rd zone 14 is in order to melting and crystallization first area 12 pairing not crystal regions, and second area 13 is in order to melting and crystallization the 4th zone 15 pairing not crystal regions.
In like manner, in the process of the even column scope of light shield 10 scanning amorphous silicon layers 16, the pairing laser radiation of 12a zone, the first strip gap is to interlock with the pairing crystal region of the 3rd strip gap 14a and the part overlapping, and the pairing laser radiation of 15a zone, the 4th strip gap is staggered and part overlapping with the pairing crystal region of the second strip gap 13a.So, first area 12 and the 3rd zone 14 are in order to eliminate the branch's crystal boundary because of producing because of the 4th zone 15 and second area 13, first area 12 is that the 4th zone 15 is in order to melting and crystallization second area 13 pairing not crystal regions in order to melting and crystallization the 3rd zone 14 pairing not crystal regions.
Yet, at light shield 10 during with the move mode of S type scanning amorphous silicon layer 16, because the first strip gap 12a is vertical with the second strip gap 13a, the odd number row scope that causes amorphous silicon layer 16 is different with polysilicon grain direction and crystal boundary direction that even column scope institute crystallization forms, influences the electrically very huge of thin film transistor (TFT) that successive process finishes.
If light shield 10 is changed over the mode of fixed-direction, for example the light shield 10 of Fig. 2 all scans each scope of amorphous silicon layer 16 from left to right along direction 17a, though can solve above-mentioned grain orientation and the different problem of crystal boundary direction, will therefore increase the processing procedure time.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of light shield and use the method that it forms polysilicon layer.It will be used for light shield on the continuously lateral crystal growing technology and be designed to the parallel to each other and part in initial strip gap with two zones of finishing and overlap, and the strip gap in middle two zones is also parallel to each other and part overlaps but with orthogonal or relative tilt one angle in strip gap in initial and two zones of finishing.Thus, can reduce amorphous silicon via the branch's crystal boundary in the long brilliant back polysilicon that is crystallized into of continuously lateral, improve the uniformity coefficient of the brilliant direction of length of polysilicon whereby, and reduce the roughness on the surface of polysilicon layer, promote widely thin film transistor (TFT) that successive process finishes electrically and its uniformity coefficient.
Propose a kind of light shield according to an aspect of the present invention, comprise a first area, a second area, one the 3rd zone and one the 4th zone.First area and second area are formed at the two ends of light shield respectively, and have several respectively and be parallel to each other substantially and towards the first bar shaped gap and the second bar shaped gap of a first direction.The 3rd zone and the 4th zone are formed at respectively between first area and the second area, and have several respectively and be parallel to each other substantially and towards the 3rd bar shaped gap and the 4th bar shaped gap of a second direction; Be characterized in: this first direction is different with this second direction.
A kind of method that forms polysilicon layer is proposed according to a further aspect in the invention.At first, on a substrate, form an amorphous silicon layer.Then, provide a light shield, light shield comprises a first area, a second area, one the 3rd zone and one the 4th zone.Wherein, first area and second area are formed at the two ends of light shield respectively, and have several respectively and be parallel to each other substantially and towards the first bar shaped gap and the second bar shaped gap of a first direction.The 3rd zone and the 4th zone are formed at respectively between first area and the second area, and have several respectively and be parallel to each other substantially and towards the 3rd bar shaped gap and the 4th bar shaped gap of a second direction.Then, provide a laser, see through the light shield irradiated substrate; Be characterized in: this first direction is different with this second direction.
For above-mentioned purpose of the present invention, characteristics and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. is elaborated as follows:
Description of drawings
Fig. 1 is the synoptic diagram that is used for the light shield on the continuously lateral crystal growing technology that United States Patent (USP) notification number US 2003/0088848A1 is disclosed.
Fig. 2 is the synoptic diagram of the light shield of Fig. 1 state during with the move mode of S type scanning amorphous silicon layer.
Fig. 3 is the synoptic diagram according to the light shield of embodiments of the invention one.
Fig. 4 is the synoptic diagram of the light shield of Fig. 3 state during with the move mode of S type scanning amorphous silicon layer.
Fig. 5～11st, the deformation pattern of the light shield of Fig. 1.
Figure 12 is the synoptic diagram according to the light shield of embodiments of the invention two.
Figure 13 is the synoptic diagram according to the light shield of embodiments of the invention three.
Figure 14 is the synoptic diagram according to the light shield of embodiments of the invention four.
Figure 15 is the synoptic diagram according to the light shield of embodiments of the invention five.
Figure 16 is the synoptic diagram according to the light shield of embodiments of the invention six.
Embodiment
Embodiment one
Please be simultaneously with reference to Fig. 3～4, Fig. 3 is the synoptic diagram according to the light shield of embodiments of the invention one, Fig. 4 is the synoptic diagram of the light shield of Fig. 3 state during with the move mode scanning amorphous silicon layer of S type.In Fig. 3～4, light shield 20 comprises a light shield body 21, a first area 22, a second area 23,24 and 1 the 4th zone 25, one the 3rd zone, and first area 22, second area 23, the 24 and the 4th zone 25, the 3rd zone are formed in the light shield body 21.Wherein, first area 22 and second area 23 are formed at the two ends of light shield 20 respectively, all have several and are parallel to each other substantially and towards the first bar shaped gap and the second bar shaped gap of a first direction.The 24 and the 4th zone 25, the 3rd zone is formed at respectively between first area 22 and the second area 23, also has several and is parallel to each other substantially and towards the 3rd bar shaped gap and the 4th bar shaped gap of a second direction.Detailed structure as for light shield 20 will go on to say as follows.
The 3rd zone 24 and has several the 3rd strips gap 24a and several light tight districts of the 3rd strip 24b between first area 22 and second area 23.The 3rd strip gap 24a is parallel with the light tight district of the 3rd strip 24b and is staggered that the 3rd strip gap 24a is vertical with the first strip gap 22a, or relative tilt one angle.The bearing of trend of the 3rd strip gap 24a and the first strip gap 22a is respectively x1 and y1, has one first angle α 1 between the two.In the present embodiment, the first angle α 1 is 90 degree, represents that the 3rd strip gap 24a is vertical mutually with the first strip gap 22a.The 4th zone 25 is between second area 23 and the 3rd zone 24, and has several the 4th strips gap 25a and several light tight districts of the 4th strip 25b, and the 4th strip gap 25a is parallel with the light tight district of the 4th strip 25b and is staggered.The 4th strip gap 25a is parallel with the 3rd strip gap 24a, the 4th strip gap 25a and the 3rd strip gap 24a correspond respectively to the 3rd strip light tight district 24b and the light tight district of the 4th strip 25b, and the width of the 4th strip gap 25a and the 3rd strip gap 24a is the width that is slightly larger than the 3rd strip light tight district 24b and the light tight district of the 4th strip 25b respectively.To be described as follows as for flow process how to use light shield 20 formation polysilicon layers.
As shown in Figure 4, at first, on substrate, form an amorphous silicon layer 26.Then, provide a light shield 20.Then, provide a laser, see through the amorphous silicon layer 26 on light shield 20 irradiated substrates.Wherein, light shield 20 is the modes that move with respect to the amorphous silicon layer on the substrate 26, allows laser see through light shield 20 each scope of amorphous silicon layer 26 is crystallized into polysilicon.So present embodiment carries out the continuously lateral crystallization by light shield 20 with respect to the mode that amorphous silicon layer moves, to form polysilicon layer.In the present embodiment, suppose that amorphous silicon layer 26 maintains static, then light shield 20 will be displaced on each scope of amorphous silicon layer 26 along direction 27a～27d respectively, for laser each scope be crystallized into polysilicon.At first, light shield 20 is respectively to be end to end mode with first area 22 and second area 23, moves along direction 27a, and for laser radiation first scope, and continuously lateral crystallizes into polysilicon.The bearing of trend y1 of the first strip gap 22a and direction 27a have one second angle β 1.In the present embodiment, the second angle β 1 is 90 degree, represents that the bearing of trend y1 of the first strip gap 22a and direction 27a are vertical mutually.Then, light shield 20 is respectively to be end to end mode with second area 23 and first area 22, moves along direction 27b, and for laser radiation second scope, and continuously lateral crystallizes into polysilicon.Then, light shield 20 moves along direction 27c, and for laser radiation the 3rd scope, and continuously lateral crystallizes into polysilicon.Then, light shield 20 moves along direction 27d, and for laser radiation the 3rd scope, and continuously lateral crystallizes into polysilicon.The rest may be inferred, and light shield 20 will be with the move mode scanning amorphous silicon layer 26 of S type, and for laser radiation the 4th scope, and continuously lateral crystallizes into polysilicon.
At light shield 20 during with the move mode of S type scanning amorphous silicon layer 26, the bearing of trend of the first strip gap 22a and the second strip gap 23a is vertical with direction 27a～27d, and the bearing of trend of the 3rd strip gap 24a and the 4th strip gap 25a is parallel with direction 27a～27d.
In the process of the odd number row scope of light shield 20 scanning amorphous silicon layers 26, the pairing laser radiation of 25a zone, the 4th strip gap is to interlock with the pairing crystal region of the 3rd strip gap 24a and the part overlapping, and the pairing laser radiation of 23a zone, the second strip gap is staggered and part overlapping with the pairing crystal region of the first strip gap 22a.
In like manner, in the process of the even column scope of light shield 20 scanning amorphous silicon layers 26, the pairing laser radiation of 24a zone, the 3rd strip gap is to interlock with the pairing crystal region of the 4th strip gap 25a and the part overlapping, and the pairing laser radiation of 22a zone, the first strip gap is staggered and part overlapping with the pairing crystal region of the second strip gap 23a.
At light shield 20 during with the move mode of S type scanning amorphous silicon layer 26, because the first strip gap 22a is parallel with the second strip gap 23a, the odd number row scope that causes amorphous silicon layer 26 and even column scope by laser scanning after the polysilicon that forms of institute's crystallization have identical grain orientation and crystal boundary direction, therefore can obtain the preferable polysilicon layer of crystallization uniformity coefficient than traditional continuously lateral crystal growing technology.
Present embodiment is light shield to be designed to the parallel to each other and part in initial strip gap with two zones of finishing overlap, and the strip gap in middle two zones is also parallel to each other and part overlaps but with orthogonal or relative tilt one angle in strip gap in initial and two zones of finishing.Thus, can reduce the branch's crystal boundary in the polysilicon that amorphous silicon crystallized into after via the continuously lateral crystal growing technology, and improve the uniformity coefficient of the brilliant direction of length of polysilicon, and reduce the roughness on the surface of polysilicon layer, promote widely thin film transistor (TFT) that successive process finishes electrically and its uniformity coefficient.
Right person skilled in the art person can also understand that the technology of present embodiment is not confined to this, for example, the quantity of enlarged area with above-mentioned putting in order of zone, like this design of the light shield odd number row scope that also can avoid amorphous silicon layer and even column scope by laser scanning after the polysilicon that forms of institute's crystallization produce grain orientation and the different problem of crystal boundary direction.
In addition, first area 22, second area 23, the 24 and the 4th zone 25, the 3rd zone also can be formed in the two light shield bodies, and referenced in schematic is described as follows.As shown in Figure 5, light shield 20a also comprises light shield body 21s and 21t, and second area 23 is formed among the light shield body 21s, and first area 22, the 24 and the 4th zone 25, the 3rd zone are formed among the light shield body 21t.Or as shown in Figure 6, light shield 20b comprises light shield body 21a and 21b, and second area 23 and the 4th zone 25 are formed among the light shield body 21a, and first area 22 and the 3rd zone 24 are formed among the light shield body 21b.Or as shown in Figure 7, light shield 20c comprises light shield body 21c and 21d, and second area 23, the 24 and the 4th zone 25, the 3rd zone are formed among the light shield body 21c, and first area 22 is formed among the light shield body 21d.
In addition, first area 22, second area 23, the 24 and the 4th zone 25, the 3rd zone also can be formed in the three light shield bodies, and referenced in schematic is described as follows.As shown in Figure 8, light shield 20d comprises light shield body 21e, 21f and 21g, and second area 23 is formed among the light shield body 21e.The 4th zone 25 is formed among the light shield body 21f, and first area 22 and the 3rd zone 24 are formed among the light shield body 21g.Or as shown in Figure 9, light shield 20e comprises light shield body 21h, 21i and 21j, and second area 23 is formed among the light shield body 21i.The 25 and the 3rd zone 24, the 4th zone is formed among the light shield body 21i, and first area 22 is formed among the light shield body 21j.Or as shown in figure 10, light shield 20f comprises light shield body 21k, 21m and 21u, and second area 23 and the 4th zone 25 are formed among the light shield body 21k.The 3rd zone 24 is formed among the light shield body 21m, and first area 22 is formed among the light shield body 21u.
Moreover first area 22, second area 23, the 24 and the 4th zone 25, the 3rd zone also can be formed in the four light shield bodies, will be described as follows with reference to the accompanying drawings.As shown in figure 11, light shield 20g comprises light shield body 21n, 21p, 21q and 21r, and second area 23, the 4th zone 25, the 3rd zone 24 and first area 22 are to be formed at respectively among light shield body 21n, 21p, 21q and the 21r.
When above-mentioned light shield is used on the continuously lateral crystal growing technology, suppose that each regional width is identical, then above-mentioned light shield once can be with respect to a half-distance or its multiple of the width in the zone of amorphous silicon layer stepping on the substrate, for laser with the amorphous silicon region full-fusing that shone and crystallize into polysilicon, or again with polysilicon crystallization again.
Embodiment two
Please refer to Figure 12, it is the synoptic diagram according to the light shield of embodiments of the invention two.In Figure 12, light shield 30 comprises a light shield body 31, a first area 32, a second area 33,34 and 1 the 4th zone 35, one the 3rd zone, and first area 32, second area 33, the 34 and the 4th zone 35, the 3rd zone are formed in the light shield body 31.First area 32 has several first strips gap 32a and several light tight districts of first strip 32b, and the first strip gap 32a is parallel with the light tight district of first strip 32b and is staggered.Second area 33 has several second strips gap 33a and several light tight districts of second strip 33b, and the second strip gap 33a is parallel with the light tight district of second strip 33b and is staggered that the second strip gap 33a is parallel with the first strip gap 32a.The first strip gap 32a and the second strip gap 33a correspond respectively to light tight regional 33b of second strip and the light tight district of first strip 32b, and the width of the first strip gap 32a and the second strip gap 33a is the width that is slightly larger than light tight regional 33b of second strip and the light tight district of first strip 32b respectively.
The 3rd zone 34 is between first area 32 and second area 33, and has several the 3rd strips gap 34a and several light tight districts of the 3rd strip 34b.The 3rd strip gap 34a is parallel with the light tight district of the 3rd strip 34b and is staggered that the 3rd strip gap 34a is or relative tilt one angle vertical with the first strip gap 32a.The bearing of trend of the 3rd strip gap 34a and the first strip gap 32a is respectively y2 and x2, has one first angle α 2 between the two.In the present embodiment, the first angle α 2 is 90 degree, represents that the 3rd strip gap 34a is vertical mutually with the first strip gap 32a.The 4th zone 35 is between second area 33 and the 3rd zone 34, and has several the 4th strips gap 35a and several light tight districts of the 4th strip 35b, and the 4th strip gap 35a is parallel with the light tight district of the 4th strip 35b and is staggered.The 4th strip gap 35a is parallel with the 3rd strip gap 34a, and the width of the 4th strip gap 35a and the 3rd strip gap 34a is the width that is slightly larger than the 3rd strip light tight district 34b and the light tight district of the 4th strip 35b respectively.
Light shield 30 is the modes that move with respect to the amorphous silicon layer on the substrate, allows laser that each scope of amorphous silicon layer is crystallized into polysilicon.In the present embodiment, suppose the odd number row scope of light shield 30 along direction 37a scanning amorphous silicon layer, the pairing laser radiation of 35a zone, the 4th strip gap is to interlock with the pairing crystal region of the 3rd strip gap 34a and the part overlapping, and the pairing laser radiation of 33a zone, the second strip gap is staggered and part overlapping with the pairing crystal region of the first strip gap 32a.At light shield 30 in the process of the even column scope of direction 37b scanning amorphous silicon layer, the pairing laser radiation of 34a zone, the 3rd strip gap is to interlock with the pairing crystal region of the 4th strip gap 35a and the part overlapping, and the pairing laser radiation of 32a zone, the first strip gap is staggered and part overlapping with the pairing crystal region of the second strip gap 33a.At light shield 30 during respectively along direction 37a and 37b scanning amorphous silicon layer, the bearing of trend of the first strip gap 32a and the second strip gap 33a is parallel or vertical with direction 37a and 37b, and the bearing of trend of the 3rd strip gap 34a and the 4th strip gap 35a and direction 37a and 37b are perpendicular or parallel.In the present embodiment, because bearing of trend x2 and the direction 27a of the first strip gap 32a be parallel to each other, so the bearing of trend x2 of the first strip gap 32a and second angle between the direction 37a are 0 or 180 to spend.
At light shield 30 during with the move mode of S type scanning amorphous silicon layer, because the first strip gap 32a is parallel with the second strip gap 33a, the odd number row scope that causes amorphous silicon layer and even column scope by laser scanning after the polysilicon that forms of institute's crystallization have identical grain orientation and crystal boundary direction, therefore can obtain the preferable polysilicon layer of crystallization uniformity coefficient than traditional continuously lateral crystal growing technology.
Right person skilled in the art person can also understand that the technology of present embodiment is not confined to this, for example, the quantity of enlarged area with above-mentioned putting in order of zone, like this design of the light shield odd number row scope that also can avoid amorphous silicon layer and even column scope by laser scanning after the polysilicon that forms of institute's crystallization produce grain orientation and the different problem of crystal boundary direction.In addition, first area 32, second area 33, the 34 and the 4th zone 35, the 3rd zone also can be formed in two light shield bodies, three light shield bodies or the four light shield bodies.When above-mentioned light shield is used on the continuously lateral crystal growing technology, suppose that each regional width is identical, then above-mentioned light shield once can be with respect to a half-distance or its multiple of the width in the zone of amorphous silicon layer stepping on the substrate, for laser with the amorphous silicon region full-fusing that shone and crystallize into polysilicon, or again with polysilicon crystallization again.
Embodiment three
Please refer to Figure 13, it is the synoptic diagram according to the light shield of embodiments of the invention three.In Figure 13, light shield 40 comprises a light shield body 41, a first area 42, a second area 43,44 and 1 the 4th zone 45, one the 3rd zone, and first area 42, second area 43, the 44 and the 4th zone 45, the 3rd zone are formed in the light shield body 41.First area 42 has several first strips gap 42a and several light tight districts of first strip 42b, and the first strip gap 42a is parallel with the light tight district of first strip 42b and is staggered.Second area 43 has several second strips gap 43a and several light tight districts of second strip 43b, and the second strip gap 43a is parallel with the light tight district of second strip 43b and is staggered that the second strip gap 43a is parallel with the first strip gap 42a.The first strip gap 42a and the second strip gap 43a correspond respectively to light tight regional 43b of second strip and the light tight district of first strip 42b, and the width of the first strip gap 42a and the second strip gap 43a is the width that is slightly larger than light tight regional 43b of second strip and the light tight district of first strip 42b respectively.
The 3rd zone 44 is between first area 42 and second area 43, and has several the 3rd strips gap 44a and several light tight districts of the 3rd strip 44b.The 3rd strip gap 44a is parallel with the light tight district of the 3rd strip 44b and is staggered that the 3rd strip gap 44a is and the first strip gap 42a relative tilt.
The bearing of trend of the 3rd strip gap 44a and the first strip gap 42a is respectively y 3 and s 3, has one first angle α 3 between the two.In the present embodiment, the first angle α 3 spends less than 90, and greater than 0 degree, represents that the 3rd strip gap 44a is and the first strip gap 42a relative tilt.
The 4th zone 45 is between second area 43 and the 3rd zone 44, and has several the 4th strips gap 45a and several light tight districts of the 4th strip 45b, and the 4th strip gap 45a is parallel with the light tight district of the 4th strip 45b and is staggered.The 4th strip gap 45a is parallel with the 3rd strip gap 44a, and the width of the 4th strip gap 45a and the 3rd strip gap 44a is the width that is slightly larger than the 3rd strip light tight district 44b and the light tight district of the 4th strip 45b respectively.
Light shield 40 is the modes that move with respect to the amorphous silicon layer on the substrate, allows laser that each scope of amorphous silicon layer is crystallized into polysilicon.In the present embodiment, suppose the odd number row scope of light shield 40 along direction 47a scanning amorphous silicon layer, the pairing laser radiation of 45a zone, the 4th strip gap is to interlock with the pairing crystal region of the 3rd strip gap 44a and the part overlapping, and the pairing laser radiation of 43a zone, the second strip gap is staggered and part overlapping with the pairing crystal region of the first strip gap 42a.
The bearing of trend y3 of the first strip gap 42a and direction 47a have one second angle β 3, and in the present embodiment, the second angle β 3 is 90 degree, represents that the bearing of trend y3 of the first strip gap 42a and direction 47a are vertical mutually.
At light shield 40 in the process of the even column scope of direction 47b scanning amorphous silicon layer, the pairing laser radiation of 44a zone, the 3rd strip gap is to interlock with the pairing crystal region of the 4th strip gap 45a and the part overlapping, and the pairing laser radiation of 42a zone, the first strip gap is staggered and part overlapping with the pairing crystal region of the second strip gap 43a.
At light shield 40 during respectively along direction 47a and 47b scanning amorphous silicon layer, the bearing of trend of the first strip gap 42a and the second strip gap 43a is vertical mutually with direction 47a and 47b, and the bearing of trend of the 3rd strip gap 44a and the 4th strip gap 45a and direction 47a and 47b relative tilt.
Embodiment four
Please refer to Figure 14, it is the synoptic diagram according to the light shield of embodiments of the invention four.In Figure 14, light shield 50 comprises a light shield body 51, a first area 52, a second area 53,54 and 1 the 4th zone 55, one the 3rd zone, and first area 52, second area 53, the 54 and the 4th zone 55, the 3rd zone are formed in the light shield body 51.First area 52 has several first strips gap 52a and several light tight districts of first strip 52b, and the first strip gap 52a is parallel with the light tight district of first strip 52b and is staggered.Second area 53 has several second strips gap 53a and several light tight districts of second strip 53b, and the second strip gap 53a is parallel with the light tight district of second strip 53b and is staggered that the second strip gap 53a is parallel with the first strip gap 52a.The first strip gap 52a and the second strip gap 53a correspond respectively to light tight regional 53b of second strip and the light tight district of first strip 52b, and the width of the first strip gap 52a and the second strip gap 53a is the width that is slightly larger than light tight regional 53b of second strip and the light tight district of first strip 52b respectively.
The 3rd zone 54 is between first area 52 and second area 53, and has several the 3rd strips gap 54a and several light tight districts of the 3rd strip 54b.The 3rd strip gap 54a is parallel with the light tight district of the 3rd strip 54b and is staggered that the 3rd strip gap 54a is and the first strip gap 52a relative tilt.
The bearing of trend of the 3rd strip gap 54a and the first strip gap 52a is respectively s4 and y4, has one first angle α 4 between the two.In the present embodiment, the first angle α 4 spends less than 90, and greater than 0 degree, represents that the 3rd strip gap 54a is and the first strip gap 52a relative tilt.
The 4th zone 55 is between second area 53 and the 3rd zone 54, and has several the 4th strips gap 55a and several light tight districts of the 4th strip 55b, and the 4th strip gap 55a is parallel with the light tight district of the 4th strip 55b and is staggered.The 4th strip gap 55a is parallel with the 3rd strip gap 54a, and the width of the 4th strip gap 55a and the 3rd strip gap 54a is the width that is slightly larger than the 3rd strip light tight district 54b and the light tight district of the 4th strip 55b respectively.
Light shield 50 is the modes that move with respect to the amorphous silicon layer on the substrate, allows laser that each scope of amorphous silicon layer is crystallized into polysilicon.In the present embodiment, suppose the odd number row scope of light shield 50 along direction 57a scanning amorphous silicon layer, the pairing laser radiation of 55a zone, the 4th strip gap is to interlock with the pairing crystal region of the 3rd strip gap 54a and the part overlapping, and the pairing laser radiation of 53a zone, the second strip gap is staggered and part overlapping with the pairing crystal region of the first strip gap 52a.
The bearing of trend s4 of the first strip gap 52a and direction 57a have one second angle β 4, and in the present embodiment, the second angle β 4 spends less than 90, and greater than 0 degree, represents that the bearing of trend s4 of the first strip gap 52a and direction 57a tilt mutually.
At light shield 50 in the process of the even column scope of direction 57b scanning amorphous silicon layer, the pairing laser radiation of 54a zone, the 3rd strip gap is to interlock with the pairing crystal region of the 4th strip gap 55a and the part overlapping, and the pairing laser radiation of 52a zone, the first strip gap is staggered and part overlapping with the pairing crystal region of the second strip gap 53a.
At light shield 50 during respectively along direction 57a and 57b scanning amorphous silicon layer, the bearing of trend of the first strip gap 52a and the second strip gap 53a and direction 57a and 57b relative tilt, and the bearing of trend of the 3rd strip gap 54a and the 4th strip gap 55a is vertical mutually with direction 57a and 57b.
Embodiment five
Please refer to Figure 15, it is the synoptic diagram according to the light shield of embodiments of the invention five.In Figure 15, light shield 60 comprises a light shield body 61, a first area 62, a second area 63,64 and 1 the 4th zone 65, one the 3rd zone, and first area 62, second area 63, the 64 and the 4th zone 65, the 3rd zone are formed in the light shield body 61.First area 62 has several first strips gap 62a and several light tight districts of first strip 62b, and the first strip gap 62a is parallel with the light tight district of first strip 62b and is staggered.Second area 63 has several second strips gap 63a and several light tight districts of second strip 63b, and the second strip gap 63a is parallel with the light tight district of second strip 63b and is staggered that the second strip gap 63a is parallel with the first strip gap 62a.The first strip gap 62a and the second strip gap 63a correspond respectively to light tight regional 63b of second strip and the light tight district of first strip 62b, and the width of the first strip gap 62a and the second strip gap 63a is the width that is slightly larger than light tight regional 63b of second strip and the light tight district of first strip 62b respectively.
The 3rd zone 64 is between first area 62 and second area 63, and has several the 3rd strips gap 64a and several light tight districts of the 3rd strip 64b.The 3rd strip gap 64a is parallel with the light tight district of the 3rd strip 64b and is staggered that the 3rd strip gap 64a is and the first strip gap 62a relative tilt.
The bearing of trend of the 3rd strip gap 64a and the first strip gap 62a is respectively s5 and x5, has one first angle α 5 between the two.In the present embodiment, the first angle α 5 spends less than 90, and greater than 0 degree, represents that the 3rd strip gap 64a is and the first strip gap 62a relative tilt.
The 4th zone 65 is between second area 63 and the 3rd zone 64, and has several the 4th strips gap 65a and several light tight districts of the 4th strip 65b, and the 4th strip gap 65a is parallel with the light tight district of the 4th strip 65b and is staggered.The 4th strip gap 65a is parallel with the 3rd strip gap 64a, and the width of the 4th strip gap 65a and the 3rd strip gap 64a is the width that is slightly larger than the 3rd strip light tight district 64b and the light tight district of the 4th strip 65b respectively.
Light shield 60 is the modes that move with respect to the amorphous silicon layer on the substrate, allows laser that each scope of amorphous silicon layer is crystallized into polysilicon.In the present embodiment, suppose the odd number row scope of light shield 60 along direction 67a scanning amorphous silicon layer, the pairing laser radiation of 65a zone, the 4th strip gap is to interlock with the pairing crystal region of the 3rd strip gap 64a and the part overlapping, and the pairing laser radiation of 63a zone, the second strip gap is staggered and part overlapping with the pairing crystal region of the first strip gap 62a.
In the present embodiment, because bearing of trend x5 and the direction 67a of the first strip gap 62a are parallel to each other,, the bearing of trend x5 of the first strip gap 62a and second angle between the direction 67a spend so being 0 degree or 180.
At light shield 60 in the process of the even column scope of direction 67b scanning amorphous silicon layer, the pairing laser radiation of 64a zone, the 3rd strip gap is to interlock with the pairing crystal region of the 4th strip gap 65a and the part overlapping, and the pairing laser radiation of 62a zone, the first strip gap is staggered and part overlapping with the pairing crystal region of the second strip gap 63a.
At light shield 60 during respectively along direction 67a and 67b scanning amorphous silicon layer, the bearing of trend of the first strip gap 62a and the second strip gap 63a and direction 67a and 67b are parallel to each other, and the bearing of trend of the 3rd strip gap 64a and the 4th strip gap 65a and direction 67a and 67b relative tilt.
Embodiment six
Please refer to Figure 16, it is the synoptic diagram according to the light shield of embodiments of the invention six.In Figure 16, light shield 70 comprises a light shield body 71, a first area 72, a second area 73,74 and 1 the 4th zone 75, one the 3rd zone, and first area 72, second area 73, the 74 and the 4th zone 75, the 3rd zone are formed in the light shield body 71.First area 72 has several first strips gap 72a and several light tight districts of first strip 72b, and the first strip gap 72a is parallel with the light tight district of first strip 72b and is staggered.Second area 73 has several second strips gap 73a and several light tight districts of second strip 73b, and the second strip gap 73a is parallel with the light tight district of second strip 73b and is staggered that the second strip gap 73a is parallel with the first strip gap 72a.The first strip gap 72a and the second strip gap 73a correspond respectively to light tight regional 73b of second strip and the light tight district of first strip 72b, and the width of the first strip gap 72a and the second strip gap 73a is the width that is slightly larger than light tight regional 73b of second strip and the light tight district of first strip 72b respectively.
The 3rd zone 74 is between first area 72 and second area 73, and has several the 3rd strips gap 74a and several light tight districts of the 3rd strip 74b.The 3rd strip gap 74a is parallel with the light tight district of the 3rd strip 74b and is staggered that the 3rd strip gap 74a is and the first strip gap 72a relative tilt.
The bearing of trend of the 3rd strip gap 74a and the first strip gap 72a is respectively x6 and s6, has one first angle α 6 between the two.In the present embodiment, the first angle α 6 spends less than 90, and greater than 0 degree, represents that the 3rd strip gap 74a is and the first strip gap 72a relative tilt.
The 4th zone 75 is between second area 73 and the 3rd zone 74, and has several the 4th strips gap 75a and several light tight districts of the 4th strip 75b, and the 4th strip gap 75a is parallel with the light tight district of the 4th strip 75b and is staggered.The 4th strip gap 75a is parallel with the 3rd strip gap 74a, and the width of the 4th strip gap 75a and the 3rd strip gap 74a is the width that is slightly larger than the 3rd strip light tight district 74b and the light tight district of the 4th strip 75b respectively.
Light shield 70 is the modes that move with respect to the amorphous silicon layer on the substrate, allows laser that each scope of amorphous silicon layer is crystallized into polysilicon.In the present embodiment, suppose the odd number row scope of light shield 70 along direction 77a scanning amorphous silicon layer, the pairing laser radiation of 75a zone, the 4th strip gap is to interlock with the pairing crystal region of the 3rd strip gap 74a and the part overlapping, and the pairing laser radiation of 73a zone, the second strip gap is staggered and part overlapping with the pairing crystal region of the first strip gap 72a.
The bearing of trend s6 of the first strip gap 72a and direction 77a have one second angle β 6, and in the present embodiment, the second angle β 6 spends less than 90, and greater than 0 degree, represents that the bearing of trend s6 of the first strip gap 72a and direction 77a tilt mutually.
At light shield 70 in the process of the even column scope of direction 77b scanning amorphous silicon layer, the pairing laser radiation of 74a zone, the 3rd strip gap is to interlock with the pairing crystal region of the 4th strip gap 75a and the part overlapping, and the pairing laser radiation of 72a zone, the first strip gap is staggered and part overlapping with the pairing crystal region of the second strip gap 73a.
At light shield 70 during respectively along direction 77a and 77b scanning amorphous silicon layer, the bearing of trend of the first strip gap 72a and the second strip gap 73a and direction 77a and 77b relative tilt, and the bearing of trend of the 3rd strip gap 74a and the 4th strip gap 75a and direction 77a and 77b are parallel to each other.
The light shield that the above embodiment of the present invention disclosed and use the method that it forms polysilicon layer, it will be used for light shield on the continuously lateral crystal growing technology and be designed to the parallel to each other and part in initial strip gap with two zones of finishing and overlap, and the strip gap in middle two zones is also parallel to each other and part overlaps but with orthogonal or relative tilt one angle in strip gap in initial and two zones of finishing.Thus, can reduce amorphous silicon via the branch's crystal boundary in the long brilliant back polysilicon that is crystallized into of continuously lateral, improve the uniformity coefficient of the brilliant direction of length of polysilicon whereby, and reduce the roughness on the surface of polysilicon layer, promote widely thin film transistor (TFT) that successive process finishes electrically and its uniformity coefficient.
In sum; though the present invention discloses as above with a preferred embodiment; yet it is not in order to limit the present invention; any person skilled in the art person; without departing from the spirit and scope of the present invention; when the variation that can do various equivalences or replacement, so protection scope of the present invention is when looking accompanying being as the criterion that the application's claim scope defined.
Claims (19)
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005100041619A CN1300634C (en) | 2005-01-12 | 2005-01-12 | Photomask and method for forming polysilicon layer using same |
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| CNB2005100041619A CN1300634C (en) | 2005-01-12 | 2005-01-12 | Photomask and method for forming polysilicon layer using same |
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| CN1300634C true CN1300634C (en) | 2007-02-14 |
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| CN101250056B (en) * | 2008-03-18 | 2013-01-02 | 中国科学院上海硅酸盐研究所 | Method for low-temperature preparation of pure phase oxide material |
| CN100570824C (en) * | 2008-07-24 | 2009-12-16 | 友达光电股份有限公司 | Mask and method for forming polysilicon layer using same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1388564A (en) * | 2001-05-30 | 2003-01-01 | Lg.菲利浦Lcd株式会社 | Method for making amorphous silicon crystalize using mask |
| CN1389600A (en) * | 2001-05-11 | 2003-01-08 | Lg.菲利浦Lcd株式会社 | Method for crystalizing amorphous silicon |
| WO2003043093A1 (en) * | 2001-11-14 | 2003-05-22 | Samsung Electronics Co., Ltd. | A mask for crystallizing polysilicon and a method for forming thin film transistor using the mask |
| US6767804B2 (en) * | 2001-11-08 | 2004-07-27 | Sharp Laboratories Of America, Inc. | 2N mask design and method of sequential lateral solidification |
| US6800540B1 (en) * | 2003-06-12 | 2004-10-05 | Lg.Philiips Lcd Co., Ltd. | Method for crystallizing silicon |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1389600A (en) * | 2001-05-11 | 2003-01-08 | Lg.菲利浦Lcd株式会社 | Method for crystalizing amorphous silicon |
| CN1388564A (en) * | 2001-05-30 | 2003-01-01 | Lg.菲利浦Lcd株式会社 | Method for making amorphous silicon crystalize using mask |
| US6767804B2 (en) * | 2001-11-08 | 2004-07-27 | Sharp Laboratories Of America, Inc. | 2N mask design and method of sequential lateral solidification |
| WO2003043093A1 (en) * | 2001-11-14 | 2003-05-22 | Samsung Electronics Co., Ltd. | A mask for crystallizing polysilicon and a method for forming thin film transistor using the mask |
| US6800540B1 (en) * | 2003-06-12 | 2004-10-05 | Lg.Philiips Lcd Co., Ltd. | Method for crystallizing silicon |
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