CN1279581C - Method for making polysilicon film by excimer laser recrystallization process - Google Patents
Method for making polysilicon film by excimer laser recrystallization process Download PDFInfo
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- CN1279581C CN1279581C CN 03141245 CN03141245A CN1279581C CN 1279581 C CN1279581 C CN 1279581C CN 03141245 CN03141245 CN 03141245 CN 03141245 A CN03141245 A CN 03141245A CN 1279581 C CN1279581 C CN 1279581C
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- amorphous silicon
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- excimer laser
- silicon film
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- 238000000034 method Methods 0.000 title claims abstract description 90
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 51
- 238000001953 recrystallisation Methods 0.000 title claims abstract description 16
- 229920005591 polysilicon Polymers 0.000 title claims description 47
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000010408 film Substances 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 238000005516 engineering process Methods 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims 6
- 238000000206 photolithography Methods 0.000 claims 4
- 239000012528 membrane Substances 0.000 description 59
- 238000000576 coating method Methods 0.000 description 11
- 239000013078 crystal Substances 0.000 description 11
- 238000007715 excimer laser crystallization Methods 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 230000004927 fusion Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- Recrystallisation Techniques (AREA)
Abstract
一种利用准分子激光再结晶工艺来制作多晶硅薄膜的方法。该方法包括下列步骤：首先提供一衬底，且该衬底表面已定义有一第一区域及一第二区域，接着在该衬底上形成一非晶硅薄膜，再在该非晶硅薄膜上方形成一掩模层，随即移除该第一区域内的该掩模层，再形成一热含覆盖层且覆盖于该掩模层及该非晶硅薄膜上，最后进行一准分子激光再结晶工艺，使该第一区域内的该非晶硅薄膜再结晶成一多晶硅薄膜。从而增加所形成多晶硅薄膜的晶粒尺寸，提高元件的电性能。
A method for making a polycrystalline silicon film using an excimer laser recrystallization process. The method includes the following steps: first, providing a substrate, and the substrate surface has a first area and a second area defined thereon, then forming an amorphous silicon film on the substrate, then forming a mask layer above the amorphous silicon film, then removing the mask layer in the first area, then forming a thermal cover layer and covering the mask layer and the amorphous silicon film, and finally performing an excimer laser recrystallization process to recrystallize the amorphous silicon film in the first area into a polycrystalline silicon film. Thereby increasing the grain size of the formed polycrystalline silicon film and improving the electrical performance of the component.
Description
Technical field
The invention provides a kind of manufacture method of polysilicon membrane, particularly a kind ofly utilize excimer laser crystallization again (excimer laser crystallization, ELC) technology is made the method for polysilicon membrane.
Background technology
Along with making rapid progress of science and technology, the intelligent information products of frivolous, power saving, portable have been full of our living space, and display has been played the part of considerable role betwixt, no matter be mobile phone, personal digital assistant or notebook computer, all need the interface of display as man-machine communication.Yet mass-produced now amorphous silicon film transistor LCD (a-TFT LCD), because the restriction of carrier mobility, the demand that will further reach frivolous, power saving, high image quality is difficulty to some extent, what replace will be low temperature polycrystalline silicon (low temperature polysilicon, LTPS) Thin Film Transistor-LCD.
In LCD, because the heat resistance of general glass substrate often can only arrive 600 ℃, if therefore at high temperature directly make polysilicon membrane, will cause the torsional deformation of glass substrate, therefore existing polycrystalline SiTFT LCD often must use expensive quartz as backing material, and range of application often also can only be confined to undersized liquid crystal panel.Therefore, at present another kind utilize amorphous silicon (amorphous silicon) film again the making method for low-temperature multi-crystal silicon film of crystallization become main flow gradually, wherein (excimer laser crystallization, ELC) technology especially comes into one's own with excimer laser crystallization more again.
Excimer laser crystallization processes more roughly is divided into two types, and a kind of is traditional sweep type laser recrystallization technology, and is another kind of then be the excimer laser crystallization processes again of may command crystal boundary position.Please refer to Fig. 1, Fig. 1 is the method schematic diagram of sweep type laser recrystallization technology.As shown in Figure 1, at first sequential aggradation one resilient coating 12 and an amorphous silicon membrane 14 on a glass substrate (substrate) 10, then glass substrate 10 is placed on the carrying platform, it is moved along the directions X stepping, and allow each zone of the progressively inswept amorphous silicon membrane 14 of excimer laser L, so that amorphous silicon membrane 14 is carried out Fast Heating, thereby make and recrystallize into a polysilicon membrane 16 after amorphous silicon membrane 14 fusions.Though this method is easy, yet, electron transfer rate and element function have therefore been limited owing to can't control to crystal grain and crystal boundary position.
Please refer to Fig. 2 and Fig. 3, Fig. 2 and Fig. 3 are the excimer laser method schematic diagrames of crystallization processes again of a may command crystal boundary position.As shown in Figures 2 and 3, this method is to form a resilient coating 22 and an amorphous silicon membrane 24 in a substrate 20 surface orders earlier, wherein the amorphous silicon membrane definition has a first area 26 and a second area 28, then form the mask layer (mask 1ayer) 30 of patternings on amorphous silicon membrane 24 surfaces again and be covered on the second area 28, generally speaking, employed mask layer 30 includes a metal level or a nitrogen silicon layer mostly, by increasing the heat absorption degree that reflectivity or thermal conduction rate reduce below amorphous silicon membrane 24, make the amorphous silicon membrane 24 (second area 28) that is coated with mask layer 30 become partially molten state, and the amorphous silicon membrane 24 (first area 26) that is not coated with mask layer 30 reaches complete molten condition, therefore when finishing excimer laser irradiation and begin to solidify, can be because have a heterogeneous interface between partial melting and complete melt region, and be the nucleation basic point with the partial melting zone, second area 28 beginnings by partial melting are made horizontal crystal grain-growth toward the first area 26 of fusion fully, to form a polysilicon membrane.Can further carry out a gold-tinted and etch process then, remove the mask layer 30 and the amorphous silicon layer 24 of second area, thereby in first area 26, form a polysilicon island (polysiliconisland) 32.Can carry out follow-up display panels technology subsequently, utilize polysilicon island 32, to constitute the drive circuit in the panel of LCD as the active region in the LCD.
In above-mentioned excimer laser again in the crystallization processes, though the further crystal boundary of may command position, but formed crystallite dimension is subjected to the restriction (room temperature) of temperature, approximately have only 3 μ m, and on conductor, directly use metal level easily to cause the active region of element to pollute, and use the nitrogen silicon layer also the phenomenon that semiconductive thin film peels off can easily take place because of its hydrogen content is too high.Therefore, how increasing the crystallite dimension in the formed polysilicon membrane, is current important subject.
Summary of the invention
Main purpose of the present invention provides a kind ofly to be had a heat and contains tectal excimer laser crystallization processes again, thereby increases the crystallite dimension of the polysilicon membrane that forms, the electrical property of raising element.
The invention provides a kind of excimer laser crystallization processes method of making polysilicon membrane again of utilizing.This method at first provides a substrate, this substrate surface has defined a first area and a second area, then on this substrate, form an amorphous silicon membrane, above this amorphous silicon membrane, form a mask layer again, immediately by a gold-tinted and etch process, remove this mask layer in this first area, form a heat seal cover layer (heat-retaining capping layer) again and cover on this mask layer and this amorphous silicon membrane, carry out this excimer laser crystallization processes more at last again, make this amorphous silicon membrane in this first area recrystallize into a polysilicon membrane.
Manufacture method of the present invention is controlled the position of horizontal grain growth except forming a mask layer, and contain the temperature that cover layer is kept amorphous silicon membrane by a heat, to increase formed crystallite dimension, so can effectively increase the electrical property of low-temperature polysilicon film transistor, thereby improve the display quality of display.
Description of drawings
Fig. 1 utilizes the excimer laser method schematic diagram of crystallization processes making polysilicon membrane again in the prior art;
Fig. 2 and Fig. 3 are the another kind of excimer laser method schematic diagrames of crystallization processes making polysilicon membrane again that utilizes in the prior art;
Fig. 4～7th utilizes the excimer laser method schematic diagram of crystallization processes making polysilicon membrane again in the first embodiment of the invention;
Fig. 8 utilizes the excimer laser method schematic diagram of crystallization processes making polysilicon membrane again in the second embodiment of the invention.
Description of reference numerals
10 substrates, 12 resilient coatings
14 amorphous silicon membranes, 16 polysilicon membranes
20 substrates, 22 resilient coatings
24 amorphous silicon membranes, 26 first areas
28 second areas, 30 mask layers
32 polysilicon membranes, 110 substrates
112 resilient coatings, 114 amorphous silicon membranes
116 mask layers, 118 heat contain cover layer
120 first areas, 122 polysilicon membranes
130 second areas, 210 substrates
212 resilient coatings, 214 amorphous silicon membranes
216 heat contain cover layer 218 mask layers
Embodiment
Please refer to Fig. 4～7, Fig. 4～7th utilizes the excimer laser method schematic diagram of crystallization processes making polysilicon membrane again in the first embodiment of the invention.As shown in Figure 4, one substrate 110 at first is provided, substrate 110 surface definition have a first area 120 and a second area 130, then form a resilient coating 112 on substrate 110 surfaces, to avoid the impurity in the substrate 110 in subsequent technique, to make progress diffusion and influence the polysilicon membrane quality that is generated, above resilient coating 112, form an amorphous silicon membrane 114 subsequently, and above amorphous silicon membrane 114, form a mask layer 116 again.Wherein, with the preferred embodiments of the present invention, substrate 110 is glass substrate, resilient coating 112 is a silica layer or the sandwich construction be made up of jointly silica layer and nitrogen silicon layer, mask layer 116 includes silica layer (SiOx), nitrogen silicon layer (SiN), metal level, silicon oxynitride (SiON) layer or the multiple-level stack structure that is combined by above-mentioned material, and the method that forms above-mentioned each layer all has a variety of, such as low-pressure chemical vapor deposition (LPCVD), plasma reinforced chemical vapour deposition (PECVD) and sputter (sputtering) etc. are not added to give unnecessary details at this.
As shown in Figure 5, then carry out one first gold-tinted and etch process, remove the mask layer 116 in the first area 120, with the amorphous silicon membrane 114 that exposes first area 120.Utilize a chemical vapor deposition method subsequently again, contain cover layer 118 and cover on the mask layer 116 to form a heat.In a preferred embodiment of the invention, constitute the combination that the hot material that contains cover layer 118 includes silica (SiOx), silicon nitride (SiN), silicon oxynitride (SiON) or above-mentioned material.
Then as shown in Figure 6, shine with an excimer laser, no matter mask layer 116 uses a metal level to increase reflectivity or utilize high thermal conducting material to increase rate of heat dispation, the capital makes that when the amorphous silicon membrane in the first area 120 114 reached complete molten condition, the amorphous silicon membrane 114 in the second area 130 still can be in not fusion or partially molten state.Stop the irradiation of excimer laser subsequently, make the amorphous silicon membrane 114 of fusion recrystallize into a polysilicon membrane 122.In recrystallization process, because heat contains the existence of cover layer 118, heat will scatter and disappear with slower speed, be that the present invention can make amorphous silicon membrane 114 maintain a higher temperature environment, can carry out this recrystallization process under the time of growing, this can effectively increase the crystallite dimension of recrystal grain.
Generally speaking, employed excimer laser is generated by XeCl, ArF, KrF or XeF equimolecular, different molecules will produce different wavelength, and the power output of excimer laser and irradiation time can suitably be adjusted according to the thickness of amorphous silicon membrane 114, because the those skilled in the art that are adjusted into of this part technological parameter know, so do not repeat them here.It should be noted that, employed in the methods of the invention excimer laser, and not only be confined to existing short-pulse laser (20 to 50ns), it also can be replaced by a long pulse cycle laser (long pulse duration laser), its burst length is about 150～250ns, with the size of the further increase crystal grain that formed.
As shown in Figure 7, then carry out one second gold-tinted and etch process, contain cover layer 118, mask layer 116 and amorphous silicon membrane 114 to remove the heat that is positioned at resilient coating 112 surperficial second areas 130, and utilize an etch process to remove to be positioned at the heat of polysilicon membrane 122 tops to contain cover layer 118, to form a polysilicon island (polysilicon island) structure.Just can continue to utilize the active region of formed polysilicon island then, carry out the technology of follow-up display floater, because those skilled in the art can finish subsequent technique easily, so do not repeat them here as a low-temperature polysilicon film transistor.
See also Fig. 8, Fig. 8 utilizes the excimer laser method schematic diagram of crystallization processes making polysilicon membrane again in the second embodiment of the invention.As shown in Figure 8, the method of present embodiment is at first to form the mask layer 218 that a resilient coating 212, an amorphous silicon membrane 214, a heat contain a cover layer 216 and a patterning in a substrate 210 surface order, and then with excimer laser irradiation, recrystallize into a polysilicon membrane (not shown) after making amorphous silicon membrane 214 fusions.Compare with previous embodiment, the advantage of present embodiment is that formed mask layer 218 does not directly contact with amorphous silicon membrane 214 or polysilicon membrane, even therefore utilize metal level as mask layer 218, also can not cause the generation of metallic pollution.
Briefly, the present invention contains heat dissipation after cover layer slows down excimer laser irradiation by a heat, make and in recrystallization process, can under higher temperature environment, carry out crystal grain-growth, so can form bigger crystal grain, if and method of the present invention is used long pulse cycle laser again, then more can effectively increase about crystallite dimension to 10 μ m.Significantly improve the quality of formed low-temperature polysilicon film transistor.In addition, formerly form heat and contain under the tectal situation, i.e. the described method of second embodiment of the invention, mask layer will can directly not contact with amorphous silicon membrane or polysilicon membrane, so even utilize metal level as mask layer, can not cause any pollution yet.
Compared with prior art, the present invention is except effectively controlling the crystal boundary position, and can contain the use of cover layer and long period pulse laser by heat, significantly increase the crystallite dimension of the polysilicon membrane that forms, so can effectively strengthen the electrical property of low-temperature polysilicon film transistor, thereby improve the display quality of display.In addition, because the heat among the present invention contains cover layer and can be located between amorphous silicon membrane and the mask layer, thus can effectively solve in the prior art problems such as incident metallic pollution or semiconductive thin film peel off, thus the raising reliability of products.
The above only is the preferred embodiments of the present invention, and every equalization of being done according to the present invention changes and modifies, and all should belong to the covering scope of patent of the present invention.Protection scope of the present invention is with being as the criterion that claim was defined.
Claims (20)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03141245 CN1279581C (en) | 2003-06-04 | 2003-06-04 | Method for making polysilicon film by excimer laser recrystallization process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03141245 CN1279581C (en) | 2003-06-04 | 2003-06-04 | Method for making polysilicon film by excimer laser recrystallization process |
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| CN1553474A CN1553474A (en) | 2004-12-08 |
| CN1279581C true CN1279581C (en) | 2006-10-11 |
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| CN 03141245 Expired - Lifetime CN1279581C (en) | 2003-06-04 | 2003-06-04 | Method for making polysilicon film by excimer laser recrystallization process |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100514559C (en) * | 2004-11-01 | 2009-07-15 | 财团法人工业技术研究院 | Method for assisted laser crystallization for producing polycrystalline silicon |
| KR101695293B1 (en) * | 2010-10-04 | 2017-01-16 | 엘지디스플레이 주식회사 | Laser pattern mask and method for fabrication the same |
| CN102646602B (en) * | 2012-04-23 | 2016-04-20 | 清华大学 | Polycrystal film preparation method, polycrystal film and thin-film transistor prepared therefrom |
| CN104078621B (en) * | 2014-06-20 | 2016-09-07 | 京东方科技集团股份有限公司 | Low-temperature polysilicon film transistor, its preparation method and array base palte and display device |
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Effective date of registration: 20180427 Address after: Hongkong Chinese Tsuen Tai Chung Road No. 8 TCL industrial center 13 floor Patentee after: Huaxing Optoelectronic International (Hong Kong) Co.,Ltd. Address before: Hsinchu City, Taiwan, China Patentee before: AU OPTRONICS Corp. |
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Granted publication date: 20061011 |