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CN1271676C - Plate display and its manufacturing method - Google Patents

Plate display and its manufacturing method Download PDF

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Publication number
CN1271676C
CN1271676C CN 200310100778 CN200310100778A CN1271676C CN 1271676 C CN1271676 C CN 1271676C CN 200310100778 CN200310100778 CN 200310100778 CN 200310100778 A CN200310100778 A CN 200310100778A CN 1271676 C CN1271676 C CN 1271676C
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Prior art keywords
substrate
gate electrode
electrode
negative electrode
electron emission
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CN1497652A (en
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余谷纯子
上村佐四郎
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Noritake Co Ltd
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Noritake Co Ltd
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Abstract

A flat panel display includes a vacuum envelope, a cathode, a gate electrode substrate, and a phosphor screen and anode electrode. The vacuum envelope includes a front glass plate which is at least partly transparent and a substrate opposing the front glass plate. The cathode is formed on the substrate and has an electron-emitting source. The gate electrode substrate has an electron-passing hole and is arranged in the vacuum envelope to oppose the substrate to be separate from the cathode. The phosphor screen and anode electrode are formed on a surface of the front glass plate in the vacuum envelope. The gate electrode substrate includes at least an insulating substrate and a gate electrode. The insulating substrate has the electron-passing hole. The gate electrode is formed on the insulating substrate. A method of manufacturing a flat panel display is also disclosed.

Description

Flat-panel monitor and manufacture method thereof
Technical field
The present invention relates to a kind of flat-panel monitor, this flat-panel monitor is luminous by making electron emission source electrons emitted impact fluorescence body screen, more specifically, relates to a kind of flat-panel monitor that uses the nanotube fiber as electron emission source.
Background technology
In recent years, proposed as Field Emission Display (FED) or used, and caused people's attention as the flat-panel monitor of nanotube fibers such as carbon nano-tube as the Field Emission Display of the electron emission source of area vacuum fluorescence display etc.
Carbon nano-tube is a kind of material with following structure: the cylindrical closure of single graphite linings forms five one group ring at the end of cylinder.Because the carbon nanotube chemical stable in properties is not vulnerable to the influence of residual gas.The representative diameter of carbon nano-tube is very little, for 10nm arrives 50nm, provides the material with high aspect ratio.Therefore, carbon nano-tube has higher field emission performance.
Flat-panel monitor for using above-mentioned carbon nano-tube as electron emission source has following example: example use by utilize electroconductive binder with a few μ mm to several mm long and make by one group of carbon nano-tube, be fixed on the electron emission source that obtains on the negative electrode as the graphite post of pin; Another example is used the electron emission source (for example, referring to the open No.11-162383 of Japanese patent unexamined) that forms by utilizing the colloid that mixes with column graphite to print.
According to having the feature of carbon nano-tube as the flat-panel monitor of electron emission source, because higher field emission effciency, it has lower power consumption, thereby has higher brightness.
With reference to Figure 17, the basic structure of flat-panel monitor is described.
In flat-panel monitor,, a plurality of pixels form screen in the matrix by being arranged in.This display has: vacuum envelope, front glass panel 108 that comprises partially transparent at least and the substrate 101 relative with front glass panel 108; Negative electrode 102 forms on substrate 101; Electron emission source 103 forms in the appointed area of negative electrode 102; Gate electrode 105 has electronics by the hole, and is relative with substrate 101, is separated with negative electrode 102; And phosphor screen 107 and anode electrode 106, on the surface of front glass panel 108, form.Between negative electrode 102 and gate electrode 105, be provided with insulating substrate 104.
To the operation of flat-panel monitor be described.
And electron emission source 103 corresponding gate electrodes 105 and negative electrode 102 between apply voltage, make gate electrode 105 have positive potential.This current potential official post electric field concentrates on the electron emission source 103, thus emitting electrons.
By being applied to the voltage between anode electrode 106 and the negative electrode 102, institute's electrons emitted being quickened towards anode electrode 106, and impinged upon on the phosphor screen 107.Like this, phosphor screen 107 is luminous.When phosphor screen 107 when constituting with three primary colors R (red), the G (green) of light and corresponding three parts of B (indigo plant), can carry out colour demonstration.
But there is following problem in traditional flat-panel monitor.
For example, when driving flat-panel monitor, although with respect to negative electrode be positive voltage constant be applied on the anode electrode, with the mode sequential scanning negative electrode of similar pulse.When choosing the negative electrode of appointment,, will be that positive voltage is applied on the gate electrode corresponding to each pixel with respect to negative electrode according to the image that will show.In this drive circuit, the voltage that will be applied on the gate electrode must be very high.Therefore, when the voltage between grid and negative electrode changed, anode current changed, the result, and the show uniformity in plate fluctuates.Equally, because the voltage that is applied on the gate electrode is very high, power consumption also increases.
On the surface of cathode substrate by comprising colloid film as formation such as the art of printing such as silk screen printing or high temperature CVD as carbon nano-tube etc., thereby form the electron emission source that is arranged on each negative electrode.Contact with gate electrode substrate by surface as formed electron emission sources such as silk screen printings.Therefore, during aiming at, the lower surface mutual friction mutually on the surface of electron emission source and gate electrode surface, thus be damaged.When carbon nano-tube forms film by high temperature CVD, film and gate electrode substrate be in contact with one another by printing the identical mode of film forming situation.Therefore, damaged the surface that constitutes the carbon nano-tube of electron emission source.As a result, the show uniformity in plate fluctuates.
Between negative electrode and gate electrode substrate, formed stray capacitance.When the intersection area that is clipped in the space between negative electrode and the gate electrode was big, stray capacitance increased, and the load capacitance that is produced when driving flat-panel monitor increases.Response speed descends, the result, and the show uniformity in plate fluctuates.
Summary of the invention
An object of the present invention is to provide a kind of flat-panel monitor that can evenly show.
Another object of the present invention provides the flat-panel monitor that a kind of available reduction is applied to the voltage on the gate electrode.
Another object of the present invention provides a kind of flat-panel monitor with higher reliability and higher actuating speed.
In order to obtain above-mentioned purpose, according to the present invention, provide a kind of flat-panel monitor, comprising: vacuum envelope comprises the front glass panel and the substrate relative with described front glass panel of partially transparent at least; Negative electrode forms on described substrate and has an electron emission source; Gate electrode substrate has electronics by the hole, is arranged in the described vacuum envelope, and is relative with described substrate, is separated with described negative electrode; And phosphor screen and anode electrode, form on the surface of the described front glass panel in described vacuum envelope, wherein, described gate electrode substrate comprise at least have the insulating substrate of described electronics by the hole, at the gate electrode that forms on the described insulating substrate, at insulating barrier that forms on the described gate electrode and the electrode for field control that on described insulating barrier, forms.
The present invention also provides a kind of flat-panel monitor manufacture method, it is characterized in that may further comprise the steps: form vacuum envelope, comprise the front glass panel and the substrate relative with described front glass panel of partially transparent at least; On described substrate, form negative electrode; Formation has the gate electrode substrate of electronics by the hole in described vacuum envelope, and is relative with described substrate, is separated with described negative electrode; And on the surface of the described front glass panel relative, form phosphor screen with described substrate, wherein, the step that forms described negative electrode may further comprise the steps: form a large amount of openings in a first type surface of the substrate with conductive surface, thereby manufacturing cathode substrate, on the inwall of each opening, formation is by the fibroplastic electron emission source of nanotube, thereby forms described negative electrode.
Description of drawings
Fig. 1 is according to first embodiment, is used to explain the schematic diagram of the structure of flat-panel monitor;
Fig. 2 A is the schematic diagram that is used to explain gate electrode substrate;
Fig. 2 B is the schematic cross sectional view that is used to explain gate electrode substrate and negative electrode;
Fig. 3 is according to first embodiment, is used to explain the block diagram of the structure of flat-panel monitor;
Fig. 4 is according to first embodiment, is used for explaining the block diagram of drive circuit of a pixel of flat-panel monitor;
Fig. 5 A is a driving sequential chart according to the vertical scanning circuit in the flat-panel monitor of first embodiment to Fig. 5 C;
Fig. 6 A is a driving sequential chart according to the horizontal scanning circuit in the flat-panel monitor of first embodiment to Fig. 6 D;
Fig. 7 A is the curve chart that is used to explain the electrode for field control driving voltage of the conventional flat panel display that does not have electrode for field control;
Fig. 7 B is according to first embodiment, is used to explain the curve chart of the electrode for field control driving voltage of the flat-panel monitor with electrode for field control;
Fig. 8 is according to second embodiment, is used to explain the schematic diagram of the structure of flat-panel monitor;
Fig. 9 A is according to second embodiment, is used for explaining the schematic diagram of the gate electrode substrate of flat-panel monitor;
Fig. 9 B is according to second embodiment, is used for explaining the schematic diagram of the cathode substrate of flat-panel monitor;
Figure 10 A is the schematic plan view that is used to explain cathode substrate;
Figure 10 B is the schematic cross sectional view along the resulting part of A-A among Figure 10;
Figure 10 C is the schematic plan view of another cathode substrate;
Figure 11 A is the schematic elevational view of the major part of flat-panel monitor;
Figure 11 B is the profile along the resulting part of B-B among Figure 11 A;
Figure 12 A is the schematic elevational view of the major part of another flat-panel monitor;
Figure 12 B is the profile along the resulting part of C-C among Figure 12 A;
Figure 13 A is the schematic elevational view of the major part of another flat-panel monitor;
Figure 13 B is the profile along the resulting part of D-D among Figure 13 A;
Figure 14 A is the schematic elevational view of the major part of another flat-panel monitor;
Figure 14 B is the profile along the resulting part of E-E among Figure 14 A;
Figure 15 A is the schematic elevational view of the major part of another flat-panel monitor;
Figure 15 B is the profile along the resulting part of F-F among Figure 15 A;
Figure 16 A is the schematic elevational view of the major part of another flat-panel monitor;
Figure 16 B is the profile along the resulting part of G-G among Figure 16 A; And
Figure 17 is the schematic cross sectional view that is used to explain the structure of conventional flat panel display.
Embodiment
With reference to the accompanying drawings, embodiments of the invention are described.
Be useful in the accompanying drawing of explaining embodiment, the part with identical function represents with identical reference number, and will omit the description to its repetition.
First embodiment
As shown in Figure 1, comprise according to the flat-panel monitor of first embodiment: vacuum envelope, the front glass panel 10 that comprises partially transparent at least is with relative with front glass panel 10 and have the glass substrate 1 that is essentially rectangular shape during from top observation; And negative electrode 3, on glass substrate 1, form, and in the appointed area, have electron emission source.
Flat-panel monitor also comprises: gate electrode substrate 13, and have electronics by hole 6, and be arranged in the big envelope, relative with glass substrate 1, be separated with negative electrode 3; And phosphor screen 9 and anode electrode 8, form on the surface of the front glass panel 10 in vacuum envelope.
Negative electrode 3 has a plurality of strip-shaped cathode 12 that are arranged in parallel.The electrode 12 of similar band shape forms electron emission source 14.Between the electrode 12 of a plurality of similar band shapes, substrate flange 2 is set.
Form substrate flange 2 with height smaller or equal to strip-shaped cathode 12.Substrate flange 2 prevents the discharge between the strip-shaped cathode 12.
In order to form electron emission source 14, electric conducting material is filled in the strip-shaped cathode 12 in the formed opening, forming conductive film, and form a large amount of nanotube fibers, come out from conductive film.Instead, can in strip-shaped cathode 12, not form opening, and electric conducting material is filled on the strip-shaped cathode 12, form conductive film, and can form a large amount of nanotube fibers, come out from conductive film.
Each nanotube fiber all be by carbon make, thickness is about 1nm or above to less than 1 μ m, and length is about 1 μ m or above to the material less than 100 μ m, for example, is formed by carbon nano-tube.
The example of carbon nano-tube comprises following several: a kind of have a single layer structure; And a kind ofly have a coaxial multi-layer structure, wherein, the multilayer graphite linings has formed the bushing type stepped construction by each graphite linings of cylindrical closure.Can adopt any structure.
Instead, can adopt hollow graphite pipe with random defect structure or the graphite-pipe of having filled carbon.Can adopt the structure of having mixed above-mentioned single-layer carbon nano-tube and having had the carbon nano-tube of coaxial multi-layer structure.
Shown in Fig. 2 A and Fig. 2 B, gate electrode substrate 13 comprises insulating substrate 4, at the gate electrode 15 that forms on the insulating substrate 4, at the insulating barrier 5 that forms on the gate electrode 15 with forming so that apply the electrode for field control 11 of voltage between insulating barrier 5 and strip-shaped cathode 12 on the insulating barrier 5.
Gate electrode substrate 13 with strip-shaped cathode 12 in have through hole (electronics is by hole 6) in formed electron emission source 14 zone of intersecting.Pass through hole 6 from electron emission source 14 electrons emitted by electronics, and quicken towards anode electrode 8.
On insulating substrate 4, with the corresponding number of line number gate electrode 15 is set with the pixel of flat-panel monitor, along forming band, it is parallel to each other in fact with the perpendicular direction of strip-shaped cathode 12.When needed, between set gate electrode 15, can form the space.
The impingement region that impinges upon the electronics on the phosphor screen 9 depends on the thickness of insulating barrier 5 and changes.The thickness of insulating barrier 5 is big more, and the impingement region of electronics is narrow more, thereby electronics is focused on.For example, in first embodiment, the thickness of insulating barrier 5 is set to tens μ m to hundreds of μ m, narrows down thereby make from the zone of electron emission source 14 electrons emitted on phosphor screen 9, and electronics is focused on.
Form electrode for field control 11, cover the whole surface of insulating barrier 5.Along with the appearance of electrode for field control 11, can dhield grid electrode 15 and negative electrode 3 with electron emission source 14 of making by carbon nano-tube.In the zone that forms electrode for field control 11, the potential difference between negative electrode 3 and the anode electrode 8 does not produce electric field.Like this, can prevent owing to concentrate on the damage that the place on the electron emission source 14 causes.
Between front glass panel 10 and gate electrode substrate 13, form front flange 7.From top observation the time, front glass panel 10 has the shape that is essentially rectangle, and makes about 1mm to the thick glass plate acquisition of 2mm by the alkalescent soda-lime glass is forged.
For example, front flange 7 is made by the ambroin that comprises the low melting point sintered glass, and is suspended between front glass panel 10 and the gate electrode substrate 13 perpendicular to the direction of substrate flange 2 with interval, the edge of appointment.
Be arranged on the front glass panel 10 as phosphor screens 9 such as red line emitting phosphors screen 9R, green glow phosphor screen 9G and blue light phosphor screen 9B, in the zone between front flange 7.Anode electrode 8 is arranged on the phosphor screen 9.Phosphor screen 9 forms band, corresponding to each gate electrode 15.Each phosphor screen by be used in usually in cathode ray tube and so on, luminous fluorophor oxide or fluorophor sulfide is made by the electronic impact of 4kV after the high pressure of 10kV quickens the time.
In first embodiment, form electrode for field control 11, cover the whole surface of insulating barrier 5.Instead, can form electrode for field control 11, cover insulating barrier 5 selectively.Equally, electrode for field control 11 can form grid, in the non-existent place of electrode for field control, stays partial insulative layer 5.
When forming electrode for field control 11 by this way, can and have on the negative electrode of carbon nano-tube at gate electrode and apply uniform electric field.In the zone that has formed electrode for field control, the potential difference between negative electrode and the anode does not produce electric field.Thereby, can prevent because to the discharge of electron emission source, especially to the caused damage of discharge on the surface of electron emission source.
In the present embodiment, in order to launch the three primary colors that constitute by red, green and blue, three class phosphor screens have been used with display color.Instead, in order to obtain monochromatic the demonstration, can use one type phosphor screen.
Use the low melting point sintered glass that above-mentioned glass substrate 1, gate electrode substrate 13 and the front glass panel 10 that is formed with front flange 7 are sealed, clamp the pad (not shown), thereby form vacuum envelope.Vacuum envelope inside remains on 10 -5The vacuum degree that the Pa magnitude is above.
In this case, the strip-shaped cathode 12 that forms on glass substrate 1 is relative with the insulating substrate 4 of gate electrode substrate 13, and the electrode for field control 11 of gate electrode substrate 13 is relative with metal backing (metal-backed) film 8.
To the manufacture method according to the flat-panel monitor of first embodiment be described.
Form substrate flange 2 with the interval of appointment, on glass substrate 1.For example,, on glass substrate 1, repeatedly form the insulation colloid that comprises the low melting point sintered glass, reach specified altitude assignment up to it by silk screen printing.Afterwards, calcining insulation colloid forms substrate flange 2.The height of the height of substrate flange 2 smaller or equal to negative electrode 3 is set.
When forming substrate flange 2 by this way, can be only be limited to electron emission source 14 and have formed space between the electrode layer 25 of gate electrode substrate 13 of gate electrode by the thickness of insulating substrate 4.
Subsequently, between the adjacent substrate flange 2 that forms on the glass substrate 1, above-mentioned strip-shaped cathode 12 is set, closely contacts, then, in strip-shaped cathode 12, be formed for forming the zone of electron emission source 14 with glass substrate 1.
For example, prepare 426 alloy sheets.Do not form at those of 426 alloy sheets on zone of electron emission source 14 and form resist pattern.Then, 426 alloy sheets are etched partially, formation will form the zone of electron emission source 14.Etching partially is in order to form opening, rather than perforate (through hole).According to the number of pixels of flat-panel monitor etc., suitably adjust length along long side direction.
The shape of each opening can be the pattern that tilts or waffle-like pattern, as polygons such as hexagon or triangle, circular or oval by these resulting shapes in polygonal angle of rounding.
The size of opening be can suitably adjust, matrix or grid formed.
Instead, can prepare to have had the strip-shaped cathode 12 in the zone that is used to form electron emission source 14 in advance.
Mask to print is closely contacted with the strip-shaped cathode 12 with the zone that is used to form electron emission source 14.By silk screen printing, the conductive rubber that will comprise as nanotube fibers such as carbon nano-tube is filled in the zone that is used to form electron emission source 14.
For example, as the conductive rubber that comprises carbon nano-tube, use that will mainly to comprise carbon nano-tube and length with 1: 1 mixed proportion be that the needle-like bundle (column graphite) of about 10 μ m mixes the conductive rubber that obtains with silver lacquer (adhesive solvent with conductivity).
Silver lacquer be a kind of in by the viscous medium that resin dissolves is obtained in solvent, with particle size, be that the glass particle of the about 1 μ m particle size that distributing is approximately the flowed silver of silver-colored particle (metallic particles) of 1 μ m as media, the material that use can suitably be decomposed and gasify, for example, under atmospheric pressure be heated to about 300 to 400 materials that just can remove.As glass particle, use those can about 300 to 400 just can melt those.
Every nanotube fiber can have an end and link to each other with the inside that strip-shaped cathode 12 forms the zone of electron emission sources 14, perhaps can be crooked, perhaps with an end of other nanotube fiber around.
In this case, by the degree of depth of adjustment opening or the thickness of electron emission source 14, can prevent that electron emission source 14 from directly contacting with gate electrode substrate 13.
Then, remove mask to print.For example, in about 450 pairs of resulting specific times of structure heating, calcining is filled in the zone that is used to form electron emission source 14 and comprises the conductive rubber of carbon nano-tube, thereby removes mask to print.
Then,,, remove lip-deep silver-colored particle of conductive film and adhesive selectively by gasification with the surface of laser beam irradiation conductive film, thus the exposed nanotubes bundle.Equally, remove on the nanotube bundle surface, except carbon nano-tube selectively, other carbon polyhedron particles, thereby only expose carbon nano-tube equably as carbon compound.
By this way, be formed on the negative electrode 3 that has formed electron emission source 14 on the strip-shaped cathode 12.
To the manufacture method of gate electrode substrate 13 be described.
At first, preparing thickness is the insulating substrate 4 of about a few μ m to tens μ m.By along the direction vertical with above-mentioned cathode substrate 12, in fact in parallel to each other on insulating substrate 4, be formed on the line number that quantitatively equals the flat-panel monitor pixel, by as comprise that silver or carbon are made as the conductive rubber of electric conducting material etc. and along the banded gate electrode 15 of the approximately long 0.6mm of short side direction.
Form insulating barrier 5 on the insulating substrate 4 that has formed gate electrode 15, thickness is that tens μ m are to hundreds of μ m.
By silk screen printing, on the whole surface of insulating barrier 5, form by comprising the electrode for field control 11 that silver or carbon are made as the conductive rubber of electric conducting material, for example, thickness is tens μ m, calcines then.
According to the number of pixels such as flat-panel monitor, suitably adjust the length of gate electrode 15 along long side direction.In this case, the interval with appointment forms adjacent gate electrode 15.
Form gate electrode 15 by this way.When banded gate electrode 15 was set on insulating substrate 4, heat can make it expand respectively, thereby its size may change.Equally, when flat-panel monitor vibrated, gate electrode 15 also may vibrate.In these cases, can absorb gate electrode 15 change and vibration thereof dimensionally by the space between the gate electrode 15.
Thereby can reduce gate electrode 15 change dimensionally or the adverse effect of change target 3.
Although form gate electrode 15 by printing in the present embodiment, also can form by photoetching, etching or electrolytic deposition.
Assigned address in gate electrode substrate 13 forms electronics by hole 6.Use carbon dioxide laser or by sandblast, lamination printing etc., form electronics at the assigned address of gate electrode substrate 13 and pass through hole 6.
For example, suppose that electronics is that each diameter is the circle of 0.2mm to 0.4mm by hole 6.By adjusting the diameter of electronics by hole 6, the number of electrons that can be adjusted at from electron emission source 14 electrons emitted, emission contributes to light.
On an interarea of front glass panel 10, form front flange 7.For example, on front glass panel 10, repeatedly form the insulation colloid that comprises the low melting point sintered glass, reach specified altitude assignment, calcine then, thereby form front flange 7.
Form front flange 7, make that the width of each is 50 μ m, and the surface and the gap between the metal backing film 8 that have formed the gate electrode substrate 13 of gate electrode 15 are that 2.0mm is to 4.0mm.
Gap between the front flange 7 is set, makes the width of the phosphor screen 9 that must be arranged in the zone that is clipped between the front flange 7 be approximately 0.3mm.
Form phosphor screen 9 in the zone that is clipped between the front flange 7, be arranged on the front glass panel 10.For example, the phosphor screen 9 that silk screen printing is made by the fluorophor colloid forms bar, calcines then.
As phosphor screen 9, use red line emitting phosphors screen 9R, green glow phosphor screen 9G and blue light phosphor screen 9B, make the thickness of each film be 10 μ m to 100 μ m, width is 0.3mm.
For monochrome display, can use one type phosphor screen 9.
On established phosphor screen 9, form the aluminium film that thickness is approximately 0.1 μ m.For example, adopt known vapour deposition to form the aluminium film.
Gate electrode substrate 13 is placed on the glass substrate 1 with negative electrode 3, makes electrode for field control 11 up.With pad bezel (not shown) be placed on glass substrate 1 around, and the front glass panel 10 that will have phosphor screen 9, metal backing film 8 and a front flange 7 is placed on the pad bezel.At this moment, front glass panel 10 is set, the end face of corresponding front flange 7 is contacted with the respective regions that is clipped between the banded gate electrode 15, wherein, banded gate electrode 15 is formed on each insulating substrate 4.
Bonding and fixing glass substrate 1, front glass panel 10 and pad bezel with the low melting point sintered glass, thus vacuum envelope formed.Formed exhaust outlet in the pad bezel is linked to each other with vacuum pump, the inside of vacuum envelope is emptied to the pressure of appointment.Afterwards, exhaust outlet is sealed.
According to present embodiment, when forming substrate, expose carbon nano-tube by surface with the laser beam irradiation conductive film.Instead, can not pass through laser beam irradiation, and expose carbon nano-tube by the selectivity dry etching that uses plasma.
As the conductive rubber that comprises carbon nano-tube, used silver-colored lacquer.Instead, can use other conductive rubber.For example, can use the conductive rubber that has utilized the particle of making by yellow gold.Instead, can use conducting polymer.
Substrate as forming vacuum envelope has used glass substrate 1.But substrate is not limited to glass substrate 1, and can use as insulating substrates such as ceramic substrates.Can by high temperature CVD directly as strip-shaped cathode 12 such as 426 alloy sheets on form the CNT film and form electron emission source 14.
To the drive circuit of flat-panel monitor be described.
As shown in Figure 3 and Figure 4, flat-panel monitor comprises: anode supply 19 is used for anode voltage is applied to anode electrode 8; Horizontal scanning circuit 17 is used for the negative electrode driving voltage is applied to negative electrode 3; Vertical scanning circuit 16 is used for the gate electrode driving voltage is applied to gate electrode 15; Electrode for field control driving power 20 is used for the electrode for field control driving voltage is applied to electrode for field control 11; And control circuit 18, be used to control vertical scanning circuit 16 and horizontal scanning circuit 17.
Anode supply 19 will as about 5kV to the voltage of 10kV etc. with respect to negative electrode 3 for positive anode voltage constant be applied on the anode electrode 8.
Electrode for field control driving power 20 will as greater than the voltage of 1kV etc. with respect to strip-shaped cathode 12 for positive voltage constant be applied on the electrode for field control 11.The voltage that is applied on the electrode for field control driving power 20 is following voltage: utilize this voltage, the potential difference between electrode for field control 11 and the negative electrode 13 is lower than the potential difference that has produced the electric field that makes electron emission source 14 emitting electrons.
Horizontal scanning circuit 17 is applied to the voltage order on the strip-shaped cathode 12 by the negative electrode driving power switch 23 that on/off links to each other with each strip-shaped cathode 12, thus scanning strip-shaped cathode 12.In this case,, connect corresponding negative electrode driving power switch 23, thereby will be applied on the corresponding strip-shaped cathode 12 as the voltage of-60V etc. in order to carry out light emission.In order to forbid the light emission, disconnect corresponding negative electrode driving power switch 23, will be applied on the corresponding strip-shaped cathode 12 as voltages such as 0V.
Vertical scanning circuit 16 is applied to the voltage order on the gate electrode 15 by the gate electrode driving power switch 22 that on/off links to each other with respective gates electrode 15.In this case, the voltage that be applied on the gate electrode 15 should have the electrical potential difference (as mentioned above) of appointment with the voltage that will be applied on the negative electrode 3.
For example, for the row that activates (row of negative electrode driving power switch 23), when connecting gate electrode driving power switch 22, will be applied on the gate electrode 15 as the gate electrode driving voltages such as voltage of 50V for connecting.As a result, the potential difference between gate electrode 15 and the negative electrode 3 is 110V (50V+60V).
By this way, the electrode for field control driving power will be that positive voltage (electrode for field control driving voltage) is applied on the electrode for field control 11 consistently with respect to negative electrode.In this state, the gate driving power supply is applied to the voltage lower than electrode for field control driving voltage on the gate electrode.When choosing negative electrode, negative voltage is applied on the negative electrode.
The signal decomposition of the image that control circuit 18 will show is the required signal of the required signal of vertical scanning circuit 16 and horizontal scanning circuit 17.Control circuit 18 same controlling level scanning circuits 17 and vertical scanning circuit 16 apply the timing of voltage.
To the operation of flat-panel monitor be described.As shown in Figure 3, description is followed the situation that direction is provided with three pixels, four pixels are set along column direction.Can make an explanation to following the situation that a plurality of pixels is set with column direction in an identical manner.
With reference to Fig. 5 A to Fig. 5 C and Fig. 6 A to Fig. 6 C, at gate electrode G 1With strip-shaped cathode C 1And C 4The situation that the regional formed pixel that intersects shows is described.
Anode supply 19 will with respect to negative electrode 3 for positive anode voltage constant be applied on the anode electrode 8.Electrode for field control driving power 20 will be applied on the electrode for field control 11 for positive voltage with respect to negative electrode 3 as 1kV etc.
Horizontal scanning circuit 17 is applied to the voltage order on the strip-shaped cathode 12 by the mode with similar pulse, and strip-shaped cathode 12 is scanned.For example, in order to produce the light emission, voltage is set to-60V; In order to forbid the light emission, voltage is set to 0V.In this case, with voltage c 11, 0V, 0V and c 41Be applied to band electrode C respectively 1, band electrode C 2, band electrode C 3With band electrode C 4(Fig. 6 A is to 6D).For example, c 11And c 41Be-negative voltage of 60V.So other electron emission sources 14 except those have the address that is shown are emitting electrons not.
When the strip-shaped cathode to appointment scans, connect in the corresponding gate electrode G of each pixel of the image that will show 1Gate electrode driving power switch 22.So,, the power supply of appointment is applied to gate electrode G with respect to negative electrode 3 1On.For example, the voltage as 50V is applied to gate electrode G 1When last, produced the potential difference (Fig. 5 A is to Fig. 5 C) of about 110V with respect to negative electrode 3.
As a result, strip-shaped cathode C 1And C 4With gate electrode G 1The potential difference of intersecting area is 110V, and strip-shaped cathode C 2And C 3With gate electrode G 1The potential difference of intersecting area is 0V.The electric field that potential difference between strip-shaped cathode 12 and gate electrode 15 is produced when being about 110V makes corresponding electron emission source 14 emitting electrons.So, electron emission source 14 emitting electrons.
In the present embodiment, the activation row of gate electrode 15 has been remained on given voltage and remaining row remains on the situation of 0V is described.Instead, can remain on positive voltage, and remaining row is applied back bias voltage greater than several V, make other electron emission sources emitting electrons not except those have the electron emission source of the address that will show by activation row with gate electrode 15.
As mentioned above, when remaining row is set to 0V, do not need to use negative voltage.So, no longer need negative voltage power supply.This reduces for cost is effective.
With reference to Fig. 7 A and 7B, the voltage that be applied on the electrode for field control 11 is described.According to Fig. 7 A and 7B, the potential difference between negative electrode 3 and gate electrode 15 is specific voltage Vth or more hour, does not have electric current to flow.When having applied Vth or higher potential difference, electric current begins to flow.Along with the increase of potential difference, electric current also increases.This shows, the potential difference between electron emission source 14 and gate electrode 15 becomes Vth or the electric field that produced when higher makes electron emission source 14 emitting electrons.
In Fig. 7 A, voltage Vth is about 300V, and is about 100V among Fig. 7 B.By this way, be provided with electrode for field control 11 and will with respect to negative electrode 3 for positive voltage constant when being applied on the electrode for field control 11, can reduce the voltage that will be applied on the gate electrode 15.
By the electric field that potential difference produced between electron emission source 14 and the gate electrode 15 depend on equally between electron emission source 14 and the gate electrode 15 the distance etc. change.Therefore, as long as it can produce the electric field that makes electron emission source 14 emitting electrons, can change potential difference between electron emission source 14 and the gate electrode 15 and the distance between electron emission source 14 and the gate electrode 15 according to multiple mode.
Therefore, when in advance on electrode for field control 11, having applied with respect to negative electrode 3 to positive voltage, can reduce the potential difference that is used to produce the electric field that makes electron emission source 14 emitting electrons, and can reduce with respect to negative electrode 3, will be applied to the voltage on the gate electrode 15.
So, when low-down grid voltage is applied to be arranged at than electrode for field control 11 more near the gate electrode 15 of the position of electron emission source 14 on the time, electron emission source 14 can emitting electrons, thus phosphor screen 9 can be luminous.Owing to can reduce the variation of voltage between grid and the negative electrode, also can reduce the variation of anode current.As a result, the anode current of each pixel becomes evenly, thereby has improved the show uniformity in plate.
When having reduced the voltage that will be applied on the gate electrode 15, can reduce the driver cost, thereby reduce the cost of plate.
According to the foregoing description, because gate electrode substrate by insulating substrate, at the gate electrode that forms on the insulating substrate, form at insulating barrier that forms on the gate electrode and the electrode for field control that forms, can reduce the voltage that will be applied on each gate electrode on insulating barrier.
Owing to be provided with electrode for field control, can shield to gate electrode and negative electrode with carbon nano-tube.In the zone that is formed with electrode for field control, the potential difference between negative electrode and the anode electrode does not produce any electric field.Thereby, can prevent to concentrate on the damage that electron emission source, the especially place on electron emission source surface cause.As a result, negative electrode is emitting electrons equably, thereby improves the show uniformity in the plate.
Second embodiment
With reference to the accompanying drawings, second embodiment is described.
Flat-panel monitor according to second embodiment is that a kind of structure of gate electrode substrate and negative electrode of having improved is to improve the flat-panel monitor of show uniformity.As shown in Figure 8, the flat-panel monitor according to second embodiment is made of substrate, gate electrode substrate 11, front flange 7 and panel.
To be described substrate.Glass substrate 1, substrate flange 2 and negative electrode 3 that substrate is essentially rectangular shape by from top observe the time form.
Negative electrode 3 is formed by cathode substrate 12 and electron emission source 14.By will have as make by 426 alloys and thickness to be about 0.1mm be processed into the shape of similar band shape to the substrate of the conductive surfaces such as metalwork of 0.15mm, obtain each cathode substrate 12.In addition, shown in Fig. 9 B,, in cathode substrate 12, form electron emission source and form zone 13, and form at electron emission source and to form electron emission source 14 in the zone 13 by with appointed interval, on an interarea, form square openings.
Shown in Figure 10 A and Figure 10 B, in electron emission source 14, for example, electric conducting material is filled in the electron emission source 13, form conductive film, and form a large amount of nanotube fibers, come out from conductive film.
When applying the electric field of about 100V, carbon nano-tube can be by an emission from its terminal emitting electrons.Equally, the gap that forms between the zone 13 of adjacent electron emission source can form very narrowly.
Form the nanotube fiber that has constituted electron emission source 14 on the inwall of the opening in being formed on cathode substrate.Therefore, the nanotube fiber does not contact with gate electrode substrate 11, and during aiming at, the not mutual friction mutually of lower surface of the surface of electron emission source 14 and gate electrode substrate 11, thus can prevent damage to the surface of electron emission source 14.
When by being embedded in the opening when forming electron emission source 14, can be formed flatly.
Negative electrode 3 contacts with the insulating substrate 4 of gate electrode substrate 11 in other zones except that the zone that has formed opening.Thereby, can limit the contact area of negative electrode 3 and gate electrode substrate 11.
Each electron emission source forms zone 13 shape and is not limited to above-mentioned square, and can be slant pattern shown in Figure 10 C or lattice, as polygons such as hexagon or triangles, by these resulting shapes in polygonal angle of rounding or circular or oval.Opening can form matrix or grid.
Substrate has following structure: with the corresponding number of the number of scanning lines of flat-panel monitor, in fact in parallel to each other cathode substrate 12 is set, and substrate flange 2 is set between adjacent cathode substrate 12.
Now, will be described gate electrode substrate 11.Shown in Fig. 9 A, each gate electrode substrate 11 forms by insulating substrate 4 and electrode layer (gate electrode 25).Can also form back-up coat.Electrode layer 25 has the shape of similar band shape.With with the corresponding number of the line number of flat-panel monitor pixel, with cathode substrate 12 electrode layer 25 is set crossingly in fact in parallel to each other and in fact.
If desired, between set electrode layer 25, can form the space.Electrode layer 25 has formed the shape of similar band shape by this way.When being arranged on band electrode layer 25 on the insulating substrate 4, heat can make it expand respectively, thereby its size may change.Equally, when flat-panel monitor vibrated, electrode layer 25 also may vibrate.In these cases, can absorb electrode by the space between the electrode layer 25 and become 25 dimensionally change and vibrations thereof.
Thereby, can prevent electrode layer 25 moving with respect to negative electrode 3.
In those zones that gate electrode substrate 11 and cathode substrate 12 intersect, the electronics that forms as the through hole that extends through electrode layer 25 and insulating substrate 4 passes through hole 6.Pass through hole 6 from electron emission source 14 electrons emitted by electronics, and quicken towards metal backing film 8.
Gate electrode substrate 11 in the zone that part and cathode substrate 12 intersect, has recess 35 at least.As long as it is formed in intersecting area of gate electrode substrate 11 and cathode substrate 12, can be on substrate flange 2 formation recess 35.Shown in Figure 11 A and 11B, recess 35 can reduce the crossing area in the gap that is clipped in the middle by the electrode layer 25 of gate electrode substrate 11 and cathode substrate 12.
In Figure 11 A, on the zone that is arranged on the cathode substrate 12 that has comprised substrate flange 2, form recess 35, with respect to axisymmetricly along the center line of band electrode layer 25 length direction.So, shown in Figure 11 B, the zone of gate electrode substrate 11 has appearred not existing on negative electrode 3.Can reduce the crossing area in the gap that the electrode layer 25 by negative electrode 3 and gate electrode substrate 11 is clipped in the middle like this.
In the gap that electrode layer 25 and negative electrode 3 by gate electrode substrate 11 are clipped in the middle, formed stray capacitance.Stray capacitance is directly proportional with the dielectric constant of the material of substrate flange 2 and the crossing area of gate electrode substrate 11 and negative electrode 3, and is inversely proportional to the thickness (highly) of substrate flange 2.Stray capacitance produces floating charge electric charge (floating charge).The floating charge electric charge is not need the outside to apply the electric charge that voltage is just launched, and has influenced the light emission, has changed brightness.
When stray capacitance increased, the load capacitance that is produced when driving flat-panel monitor increased, thereby response speed descends.Equally, the increase of stray capacitance has caused the difference of each pixel on response speed.As a result, the show uniformity in plate fluctuates.
When having formed above-mentioned recess 35, can reduce the area of the intersecting area in the electrode layer 25 of gate electrode substrate 11 and the gap that negative electrode 3 is clipped in the middle, thereby can reduce stray capacitance.Like this, stable brightness can be realized, and the response speed of circuit signal can be increased.Because the fluctuation in the area of intersecting area also reduces, and can make the response speed of pixel even.As a result, can improve the interior show uniformity of plate.
Now counter plate is described.
Panel is formed by the front glass panel 10, phosphor screen 9 and the metal backing film 8 that are essentially square shape from top observation.For example, metal backing film 8 is formed by the aluminium film that thickness is approximately 0.1 μ m.Metal backing film 8 is as anode.
Form as phosphor screens 9 such as red line emitting phosphors screen 9R, green glow phosphor screen 9G and blue light phosphor screen 9B in the zone between the front flange 7 on being arranged on front glass panel 10, and metal backing film 8 is arranged on the phosphor screen 9.Phosphor screen 9 is set, relative with gate electrode substrate 11.
Use the low melting point sintered glass that the pad (not shown) is clipped in the middle, above-mentioned substrate, gate electrode substrate 11 and the panel that is formed with front flange 7 are sealed, thereby form vacuum envelope.Vacuum envelope inside remains on 10 -5The vacuum degree that the Pa magnitude is above.
In this case, the negative electrode 3 that forms on substrate is relative with the insulating substrate 4 of gate electrode substrate 11, and the electrode layer 25 of gate electrode substrate 11 is relative with the metal backing film 8 of panel.
In above-mentioned flat-panel monitor, on gate electrode substrate 11, formed recess 35, thereby reduced the crossing area in the gap that the electrode layer 25 of negative electrode 3 and gate electrode substrate 11 is clipped in the middle.Instead, shown in Figure 12 A and 12B, can form, thereby can reduce crossing area in the gap that the electrode layer 25 of negative electrode 3 and gate electrode substrate 11 is clipped in the middle by the formed opening portion 26 of perforate.
In Figure 12 A, the zone on be arranged in the negative electrode 3 that has comprised substrate flange 2 forms opening portion 26.So, shown in Figure 12 B, the zone of gate electrode substrate 11 has appearred not existing on negative electrode 3.Can reduce the crossing area of negative electrode 3 and gate electrode substrate 11 like this.
When forming opening portion 26, on each substrate flange 2, support each gate electrode substrate 11 at two points that comprise its girth.Thereby, support gate electrode substrate 11 securely, prevent vibration etc.
Shown in Figure 13 A and 13B, can form gate electrode substrate 11, make its extension on electron emission source forms zone 13, thereby can reduce the crossing area in the gap that the electrode layer 25 by negative electrode 3 and gate electrode substrate 11 is clipped in the middle.So, shown in Figure 13 B, can eliminate the crossing area in the gap that is clipped in the middle by the zone except the electrode layer 25 of electrode emission source 14 and gate electrode substrate 11.
Shown in Figure 14 A and 14B, can form gate electrode substrate 11, make it make the top extension that electron emission source forms zone 13, and can form the opening portion 26 that forms by perforate, thereby can reduce the crossing area in the gap that the electrode layer 25 by negative electrode 3 and gate electrode substrate 11 is clipped in the middle.So, as shown in Figure 14B, can reduce the crossing area in the zone except electrode emission source 14 and gate electrode substrate 11.
When forming opening portion 26, on each substrate flange 2, support each gate electrode substrate 11 at two points that comprise its girth.Thereby, support gate electrode substrate 11 securely, prevent vibration etc.
Shown in Figure 15 A and 15B, can form gate electrode substrate 11, have the shape of similar annular, thereby can reduce the crossing area of negative electrode 3 and gate electrode substrate 11.So, shown in Figure 15 B, can reduce to comprise the negative electrode 3 of electron emission source 14 and the crossing area of gate electrode substrate 11.
Shown in Figure 16 A and 16B, can form gate electrode substrate 11, shape with similar annular, and can form the opening portion 26 that forms by perforate, gate electrode substrate 11 is stayed on the substrate flange 2, thereby can be reduced the crossing area in the gap that the electrode layer 25 by negative electrode 3 and gate electrode substrate 11 is clipped in the middle.So, shown in Figure 16 B, can reduce the crossing area in the gap that the electrode layer 25 by the negative electrode 3 that comprises electron emission source 14 and gate electrode substrate 11 is clipped in the middle.
Forming opening portion 26, when staying gate electrode substrate 11 on the substrate flange 2, supporting gate electrode substrate 11 by each substrate flange 2.Thereby, can support gate electrode substrate 11 securely, prevent vibration etc.
To the operation according to the flat-panel monitor of second embodiment be described.
At first, will the operation about a pixel be described.
Between the electrode layer 25 of negative electrode 3 and gate electrode substrate 11, potential difference is set, makes electrode layer 25 have positive potential.So electric field concentrates on the nanotube fiber of the electron emission source 14 that occurs in the zone that gate electrode substrate 11 and negative electrode 3 intersect as carbon nano-tube etc.Be arranged on carbon nano-tube in the high electric field from its terminal emitting electrons.
The electronics that emits from electron emission source 14 quickens towards the metal backing film 8 that has applied positive electric field (accelerating voltage), and passes metal backing film 8, impinges upon on the phosphor screen 9.Like this, light-emitting phosphor.
To the operation of flat-panel monitor with following structure be described: be provided with along column direction, have the gate electrode substrate 11 of the electrode layer 25 that specifies number, and be provided with and follow the negative electrode 3 that direction specifies number, corresponding with gate electrode substrate 11.
Utilization has applied the metal backing film 8 of positive voltage (accelerating voltage), the positive voltage of appointment is applied on the electrode layer 25 of the first row gate electrode substrate 11.Execution sequence scanning is applied to the negative voltage of appointment on the negative electrode 3 that is positioned at first row luminous address to the nominated bank.Carry out this operation from first electrode layer 25 that is listed as specify columns.So, can carry out dot matrix and show.
In this case, negative electrode 3 and the electrode layer 25 that does not apply voltage is set to 0V.Instead, with respect to negative electrode 3, the back bias voltage of about several V is applied on the electrode layer 25.So other electron emission sources 14 except those have the electron emission source 14 of the address that will show are emitting electrons not.
Instead, the voltage that be applied on the negative electrode 3 can comprise two different voltages, i.e. 0V and positive voltage.In order to carry out the light emission, can apply 0V voltage.In order to forbid the light emission, can apply positive voltage.
In this case, for electrode layer 25, activate row and remains positive voltage, and the back bias voltage of 0V or about several V is applied on the remaining row, make except those have the electron emission source 14 of the address that will show other be with not emitting electrons of you our emission source 14.For example, the voltage that will be applied on the metal backing film 8 is set to 6kV, and the voltage that will be applied on the electrode layer 25 of gate electrode substrate 11 is set to comprise two different voltages, that is, and and 500V and 0V.So, do not need to use negative voltage.Like this, do not need negative voltage power supply, and can realize cost cutting.
In flat-panel monitor,, can reduce the crossing area in the gap that electrode layer 25 and negative electrode 3 by gate electrode substrate 11 be clipped in the middle because gate electrode substrate 11 has recess 35 and opening portion 26 at least according to present embodiment.Thereby, reduced stray capacitance, stable brightness can be realized, and the response speed of circuit signal can be improved.Also reduce owing to intersect the variation of area on area, can make the response speed of each pixel even.As a result, improved the interior show uniformity of plate.
To the manufacture method according to the flat-panel monitor of second embodiment be described.
At first, with the interval of appointment, on glass substrate 1, form substrate flange 2.For example,, on glass substrate 1, repeatedly form the insulation colloid that comprises the low melting point sintered glass, reach specified altitude assignment up to it by silk screen printing.Afterwards, calcining insulation colloid forms substrate flange 2.The height of the height of substrate flange 2 smaller or equal to negative electrode 3 is set.
Subsequently, between the adjacent substrate flange 2 that forms on the glass substrate 1, above-mentioned cathode substrate 12 is set, closely contact, and the electron emission source that is formed for forming electron emission source 14 on negative electrode 12 forms regional 13 with glass substrate 1.
For example, prepare 426 alloy sheets of the long 0.7mm of minor face, thick about 0.15mm.Do not form on the zone that electron emission source forms zone 13 at those of 426 alloy sheets and to form resist pattern.Then, 426 alloy sheets are etched partially, form electron emission source and form zone 13.Etching partially is in order to form opening, rather than perforate (through hole).According to the number of pixels of flat-panel monitor etc., suitably adjust length along long side direction.
For example, the size of each opening is 0.5mm * 0.7mm * 0.15mm.The degree of depth of each opening can be arranged on arbitrarily between 0.1mm and the 0.3mm.In this case, prepare thick 426 alloy sheets.
Instead, can prepare to have had in advance electron emission source and form regional 13 cathode substrate 12.
With mask to print with have electron emission source and form zone 13 cathode substrate 12 and closely contact.By silk screen printing, the nanotube fiber is filled in electron emission source forms in the zone 13.
Every nanotube fiber can have an end and link to each other with the inwall that the electron emission source of corresponding cathode substrate 12 forms zone 13, perhaps can be crooked, perhaps with an end of other nanotube fiber around.Owing to by in cathode substrate 12, forming opening, formed electron emission source and formed zone 13, can form electron emission source 14, and it is not directly contacted with gate electrode substrate 11.
In this case, by the degree of depth of adjustment opening or the thickness of electron emission source 14, can prevent that electron emission source 14 from directly contacting with gate electrode substrate 11.
Form zone 13 as the electron emission source that utilizes opening to form, can prevent that the conductive rubber that comprises carbon nano-tube from flowing on the glass substrate 1.
Then, remove mask to print.For example, in about 450 pairs of resulting specific times of structure heating, calcining is filled in the conductive rubber that electron emission source forms in the zone 13 and comprises carbon nano-tube, thereby removes mask to print.Like this, form the zone at electron emission source and formed the conductive film that comprises nanotube bundle in 13.For example, medium at the narrow space of each about 0.5mm * 0.7mm, form the zone at electron emission source and form conductive film in 13.When calcining conductive rubber and making wherein the glass particle fusing that is comprised, do not heave in its surface, and make it smooth.As a result, can obtain on thickness, changing less smooth conductive film.
By being embedded in by this way when forming electron emission source 14 in the opening, can be formed flatly electron emission source 14.
Then,,, remove lip-deep silver-colored particle of conductive film and adhesive selectively by gasification with the surface of laser beam irradiation conductive film, thus the exposed nanotubes bundle.Equally, remove on the nanotube bundle surface, except carbon nano-tube selectively, other carbon polyhedron particles, thereby only expose carbon nano-tube equably as carbon compound.
By this way, be formed on the negative electrode that has formed electron emission source 14 on the cathode substrate 12.
To the manufacture method of gate electrode substrate 11 be described.
In order to form gate electrode substrate 11, by silk screen printing, form by comprising the electrode layer 25 that silver or carbon are made as the conductive rubber of electric conducting material with appointed pattern, on insulating substrate 4, for example, thickness is about 10 μ m, calcines then.
For example, on insulating substrate 4, in fact in parallel to each other form each at long 0.6mm on the short side direction, on number, equal the band electrode layer 25 of the line number of flat-panel monitor pixel.According to the number of pixels such as flat-panel monitor, suitably adjust length along long side direction.In this case, the interval with appointment forms adjacent gate electrode 15.
Form band electrode layer 25 by this way.When band electrode layer 25 was set on insulating substrate 4, heat can make it expand respectively, thereby its size may change.Equally, when flat-panel monitor vibrated, electrode layer 25 also may vibrate.In these cases, can absorb electrode layer 25 change and vibration thereof dimensionally by the space between the electrode layer 25.Thereby can prevent electrode layer 25 moving with respect to negative electrode 3.
Assigned address in gate electrode substrate 11 forms electronics by hole 6.Use carbon dioxide laser or by sandblast, lamination printing etc., form electronics at the assigned address of gate electrode substrate 11 and pass through hole 6.For example, suppose that electronics is that each diameter is the circle of 0.2mm to 0.4mm by hole 6.By adjusting the diameter of electronics by hole 6, the number of electrons that can be adjusted at from electron emission source 14 electrons emitted, emission contributes to light.
Form recess 35 in the zone that is arranged on the cathode substrate 12.Recess 35 can comprise the zone that will be arranged on the substrate flange 2.Use carbon dioxide laser or by sandblast, lamination printing etc., at the assigned address formation recess 35 of gate electrode substrate 11.
For example, comprise in gate electrode substrate 11 on the cathode substrate 12 of substrate flange 2, form recess 35, along the center line of long side direction axisymmetricly with respect to band electrode layer 25.Replace recess 35, can form the opening portion 26 that constitutes by perforate.Use carbon dioxide laser or by sandblast, lamination printing etc., at the assigned address formation recess 35 of gate electrode substrate 11.
For example, shown in Figure 12 A, comprise in gate electrode substrate 11 on the cathode substrate 12 of substrate flange 2, form opening portion 26, vertical with band electrode layer 25 in fact.Can mix above-mentioned recess 35 and opening portion 26.In this case, use carbon dioxide laser or by sandblast, lamination printing etc., at the assigned address formation recess 35 and the opening portion 26 of gate electrode substrate 11.
On an interarea of front glass panel 10, form front flange 7.For example, silk screen printing repeatedly comprises the insulation colloid of low melting point sintered glass on front glass panel 10, reaches specified altitude assignment, calcines then, thereby forms front flange 7.
Form front flange 7, make that its width is 50 μ m, and the surface and the gap between the metal backing film 8 that have formed the gate electrode substrate 11 of electrode layer 25 are that 2.0mm is to 4.0mm.
Gap between the front flange 7 is set, makes the width of the phosphor screen 9 that must be arranged in the zone that is clipped between the front flange 7 be approximately 0.3mm.Form phosphor screen 9 in the zone that is clipped between the front flange 7, be arranged on the front glass panel 10.For example, the phosphor screen 9 that silk screen printing is made by the fluorophor colloid forms bar, calcines then.
As phosphor screen 9, use red line emitting phosphors screen 9R, green glow phosphor screen 9G and blue light phosphor screen 9B, make the thickness of each film be 10 μ m to 100 μ m, width is 0.3mm.For monochrome display, can use one type phosphor screen 9.
On established phosphor screen 9, form the aluminium film that thickness is approximately 0.1 μ m.For example, adopt known vapour deposition to form the aluminium film.As long as between front flange 7 and adjacent metal back of the body film 8 or between panel and gate electrode substrate 11, dielectric breakdown does not take place and front flange 7 is enough to bear atmospheric pressure, when needed, can change the gap between the front flange 7.
Suppose that flat-panel monitor uses substrate, gate electrode substrate 11 and the panel of making in the above described manner.
Gate electrode substrate 11 is placed on the glass substrate 1 with negative electrode 3, makes electrode for field control substrate 11 up.In this case, if in gate electrode substrate 11, form shown in Figure 11 A, Figure 13 A and Figure 15 A recess 35, then those zones with the band electrode layer 25 of gate electrode substrate 11 by comprising center line longitudinally are supported on each substrate flange 2.
If formed the opening portion 26 shown in Figure 12 A and the 14A, on each substrate flange 2, support each gate electrode substrate 11 at two points that comprise its girth.
If formed the opening portion 26 shown in Figure 16 A, gate electrode substrate 11 is stayed on the substrate flange 2, then support gate electrode substrate 11 by each substrate flange 2.
With pad bezel (not shown) be placed on glass substrate 1 around, and will be placed on the pad bezel by the panel that the front glass panel 10 with phosphor screen 9, metal backing film 8 and front flange 7 forms.
At this moment, front glass panel 10 is set, the end face of corresponding front flange 7 is contacted with the respective regions that is clipped between the band electrode layer 25, wherein, band electrode layer 25 is formed on each insulating substrate 4.Bonding and fixing glass substrate 1, front glass panel 10 and pad bezel with the low melting point sintered glass, thus vacuum envelope formed.
Formed exhaust outlet in the pad bezel is linked to each other with vacuum pump, the inside of vacuum envelope is emptied to the pressure of appointment.Afterwards, exhaust outlet is sealed.
According to present embodiment, when forming substrate, expose carbon nano-tube by surface with the laser beam irradiation conductive film.Instead, can not pass through laser beam irradiation, and expose carbon nano-tube by the selectivity dry etching that uses plasma.
As the conductive rubber that comprises carbon nano-tube, used silver-colored lacquer.Instead, can use other conductive rubber.For example, can use the conductive rubber that has utilized the particle of making by yellow gold.Instead, can use conducting polymer.
Substrate as forming vacuum envelope has used glass substrate.But substrate is not limited to glass substrate, and can use as insulating substrates such as ceramic substrates.
To using carbon dioxide laser or being described by sandblast, lamination printing etc. form recess 35 and opening portion 26 in gate electrode substrate 11 situation.Instead, can on the zone that does not form recess 35 or opening portion 26, form resist pattern, and carry out etching, thereby form recess 35 and opening portion 26.
According to the foregoing description, by in cathode substrate, forming opening, formed electron emission source and formed the zone, and formed at electron emission source and to form electron emission source in the zone.Thereby electron emission source forms the zone and does not contact with gate electrode substrate.During aiming at, the surface of electron emission source and the not mutual friction mutually of the lower surface of gate electrode substrate, thus can prevent damage to the electron emission source surface.Thereby electron emission source is emitting electrons equably.As a result, can improve the interior show uniformity of plate.
When in cathode substrate, forming opening and in opening, form electron emission source, can make electron emission source smooth.Like this, electron emission source emitting electrons equably.As a result, can improve the interior show uniformity of plate.
Because negative electrode contacts with the insulating substrate of gate electrode substrate in other zones except that the zone that has formed opening, can limit the contact area of negative electrode and gate electrode substrate.
Because gate electrode substrate has recess and opening portion at least, can reduce the crossing area in the gap that the gate electrode by negative electrode and gate electrode substrate is clipped in the middle.Like this, can reduce formed stray capacitance between negative electrode and gate electrode, and can reduce the load capacitance that when starting, produced, thereby can improve the response speed of circuit signal.Owing to reduced the variation of crossing area equally, can make the response speed of each pixel even.As a result, can improve the interior show uniformity of plate.

Claims (13)

1, a kind of flat-panel monitor comprises:
Vacuum envelope (1,10) comprises front glass panel of partially transparent (10) and the substrate (1) relative with described front glass panel at least;
Negative electrode (3) forms on described substrate (1) and has an electron emission source (14);
Gate electrode substrate (13) has electronics by hole (6), is arranged in the described vacuum envelope (1,10), and is relative with described substrate (1), is separated with described negative electrode (3); And
Phosphor screen (9) and anode electrode (8) form on the surface of the described front glass panel (10) in the described vacuum envelope (1,10),
Wherein, described gate electrode substrate (11,13) comprises at least:
Insulating substrate (4) has described electronics by hole (6);
Gate electrode (15,25) is formed on the described insulating substrate (4);
Insulating barrier (5) is gone up formation at described gate electrode (15); And
Electrode for field control (11) is gone up formation at described insulating barrier (5).
2, according to the described display of claim 1, it is characterized in that:
Described negative electrode (3) comprising:
A plurality of strip-shaped cathode (12) are arranged in parallel; And
Electron emission source (14) is gone up formation in described strip-shaped cathode (12),
Go up at described insulating substrate (4), along forming described gate electrode (15) with the perpendicular direction of described strip-shaped cathode (12), and
Form described phosphor screen (9), have banded shape, corresponding to described gate electrode (15).
3,, it is characterized in that described electrode for field control (11) has at least selectively to cover described insulating barrier (5) according to the described display of claim 1.
4,, it is characterized in that described electrode for field control (11) forms grid according to the described display of claim 1.
5,, it is characterized in that described negative electrode (3) comprising according to the described display of claim 1:
Cathode substrate (12) has a large amount of openings, and
Electron emission source (14) is formed by the nanotube fiber, is formed on the inwall of described opening.
6, according to the described display of claim 5, it is characterized in that:
Described cathode substrate (12) comprises a plurality of strip-shaped cathode substrates (12), forms band, and is arranged in parallel,
Described gate electrode (15) is formed by the perpendicular direction of edge and described strip-shaped cathode substrate (12), a plurality of band electrode layers (25) that are arranged on the described insulating substrate (4), and
Described phosphor screen (9) comprise a plurality of banded phosphor screen that is oppositely arranged with described band electrode layer (25) (9R, 9G, 9B).
7, according to the described display of claim 6, it is characterized in that:
Described flat-panel monitor also comprises a plurality of substrate flanges (2), stands vertically on described substrate (1) with the interval of appointment,
Described strip-shaped cathode substrate (12) is arranged between the described substrate flange (2), and
At least support described gate electrode substrate (11) in described strip-shaped cathode (12) and described substrate flange (2).
8, according to the described display of claim 5, it is characterized in that described gate electrode substrate (11) comprises recess (35), be positioned at described gate electrode substrate (11) and the crossing subregion of described strip-shaped cathode substrate (12).
9, according to the described display of claim 5, it is characterized in that described gate electrode substrate (11) comprises opening portion (26), be positioned at described gate electrode substrate (11) and the crossing subregion of described strip-shaped cathode substrate (12).
10, according to the described display of claim 1, it is characterized in that also comprising:
First drive unit (19) is used for voltage is applied to described anode electrode (8);
Second drive unit (17) is used for the negative electrode driving voltage is applied to negative electrode (12);
The 3rd drive unit (20) is used for providing the electrode for field control driving voltage to described electrode for field control (11);
Four-drive device (16) is used for the gate electrode driving voltage is applied to described gate electrode (15), and described gate electrode driving voltage forms the current potential of appointment with respect to described negative electrode (12); And
Control device (18), make the described negative electrode of described second drive unit (17) sequential scanning (12), and when described second drive unit (17) is chosen described negative electrode (12), drive described four-drive device (16) and will be applied on the corresponding gate electrode (15) for positive voltage with respect to described negative electrode (12) according to the image that will show.
11, according to the described Driving Circuit Technology of Flat Panel Display of claim 10, it is characterized in that described the 3rd drive unit (20) is applied to voltage on the described electrode for field control (11), make potential difference between described electrode for field control (11) and the described negative electrode (12) less than the potential difference that has produced the electric field that makes described electron emission source (14) emitting electrons.
12, a kind of flat-panel monitor manufacture method is characterized in that may further comprise the steps:
Form vacuum envelope (1,10), comprise front glass panel of partially transparent (10) and the substrate (1) relative at least with described front glass panel (10);
Go up formation negative electrode (3) at described substrate (1);
Formation has the gate electrode substrate (13) of electronics by hole (6) in described vacuum envelope (1,10), and is relative with described substrate (1), is separated with described negative electrode (3); And
On the surface of the described front glass panel (10) relative, form phosphor screen (9) with described substrate (1),
Wherein, the step that forms described negative electrode (3) may further comprise the steps:
In a first type surface of substrate, form a large amount of openings (13), thereby make cathode substrate (12) with conductive surface,
On the inwall of each opening (13), form by the fibroplastic electron emission source of nanotube (14), thereby form described negative electrode (3).
13, in accordance with the method for claim 12, it is further comprising the steps of to it is characterized in that forming the step of described gate electrode substrate (11):
Form insulating substrate (4);
On described insulating substrate (4), form electrode layer (25); And
In the appointed area of described insulating substrate (4), form described electronics by hole (6) and form recess (35) and opening portion (26) at least with described electrode layer (25).
CN 200310100778 2002-10-09 2003-10-09 Plate display and its manufacturing method Expired - Fee Related CN1271676C (en)

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KR20060104652A (en) 2005-03-31 2006-10-09 삼성에스디아이 주식회사 Electron-emitting device
KR20060104657A (en) 2005-03-31 2006-10-09 삼성에스디아이 주식회사 Electron-emitting device

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JP2004134185A (en) 2004-04-30
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