CN1267169C - Light irradiation device for photodynamic therapy - Google Patents

Abstract

The present invention provides a light irradiation device suitable for photodynamic therapy, comprising a support substrate, a plurality of semiconductor light emitting elements arranged on the support substrate, a heat dissipation device bonded to the support substrate, and a fan. The present invention is characterized in that the support substrate is in a semi-spherical shape, and when the plurality of semiconductor light emitting elements arranged on the support substrate emit light, a concentrated light beam is generated. The concentrated light beam generated by the light irradiation device is used to irradiate a drug that produces a chemical reaction to the light beam.

Description

Light irradiation device for photodynamic therapy

technical field

The invention relates to a light irradiation device; in particular, it relates to a light irradiation device which uses a semiconductor light-emitting element to generate a concentrated light beam and is applied to photodynamic therapy.

Background technique

FIG. 1 schematically shows a conventional light irradiation device. As shown in FIG. 1 , the existing light irradiation device includes a lamp tube 1 and a reflector 2 . After the lamp tube 1 emits light, the light beam b emitted by the lamp tube 1 is generated by the reflector 2 into a collimated beam or a converged beam.

In the existing light irradiation device, the lamp tube generally uses a xenon lamp tube or a complex metal halide lamp tube. However, when such lamps emit light, a large amount of heat energy is generated. Further, in order to solve the large amount of heat energy generated when the existing light irradiation device emits light, a liquid cooling device is generally used to remove the heat energy. However, a light irradiation device having a liquid cooling device has a disadvantage of being bulky.

In addition, xenon lamps and complex metal halide lamps emit light at a broad range of wavelengths. However, when the light irradiation device is used in photodynamic therapy, it only needs a predetermined narrow band wavelength. Therefore, the conventional light irradiation device requires a filter to eliminate wavelengths in unnecessary bands.

In addition, the service life of xenon lamps and complex metal halide lamps is about hundreds of hours. Therefore, the light irradiation device currently used for photodynamic therapy has the disadvantage of requiring frequent replacement of the lamp tube.

Based on the above, the existing photoirradiation devices used for photodynamic therapy have disadvantages such as large volume, high heat energy, and high cost.

Contents of the invention

In view of this, in order to solve the above problems, the present invention proposes a light irradiation device suitable for photodynamic therapy; wherein, the light irradiation device uses a semiconductor light emitting element. In the present invention, a light irradiation device using a semiconductor light emitting element does not generate high heat. The light irradiation device of the present invention omits the use of a liquid cooling device, and utilizes a radiator and a fan to dissipate heat energy in the irradiation device.

An object of the present invention is to provide a light irradiation device suitable for photodynamic therapy, comprising: a supporting substrate, several semiconductor light-emitting elements with light emitting diode chips arranged on the supporting substrate, and the above-mentioned supporting substrate. A radiator and a fan are connected; wherein, several semiconductor light-emitting elements arranged on the above-mentioned support substrate are arranged in a hemispherical shape. When the semiconductor light emitting element emits light, the radiator and the fan dissipate the heat energy in the light irradiation device.

Another object of the present invention is to provide a light irradiation device suitable for photodynamic therapy, comprising: a support substrate, several semiconductor light-emitting elements with light-emitting diode chips arranged on the above-mentioned support substrate, a positive lens, and A heat sink and a fan bonded to the above-mentioned support substrate; wherein, several semiconductor light emitting elements arranged on the above-mentioned support substrate emit a collimated beam, and then the collimated beam is formed into a converged beam by the above-mentioned positive lens. When the semiconductor light emitting element emits light, the radiator and the fan dissipate the heat energy in the light irradiation device.

A feature of the present invention is that a plurality of semiconductor light emitting elements arranged on the above-mentioned support substrate are arranged in a hemispherical shape. When the semiconductor light-emitting element emits light, a concentrated beam of light is produced.

Another feature of the present invention is that several semiconductor light emitting elements disposed on the support substrate emit a collimated light beam, and then the collimated light beam is formed into a concentrated light beam by the positive lens.

Another feature of the present invention is that when the semiconductor light-emitting element emits light, a heat sink and a fan are used to dissipate the heat energy generated by the light-irradiating device.

An advantage of the present invention is that the above-mentioned semiconductor light-emitting element has a long service life.

Another advantage of the present invention is that there is no need to use a liquid cooling device, which reduces the volume and weight of the light irradiation device.

Another advantage of the present invention is that the above-mentioned semiconductor light-emitting element can emit a coherent single-wavelength light beam.

Description of drawings

In order to make the above objects, features, and advantages of the present invention more comprehensible, an embodiment is specifically cited below, together with the accompanying drawings, and the detailed description is as follows:

Fig. 1 schematically shows a kind of existing light irradiation device;

Fig. 2A schematically shows a semiconductor light-emitting element used in the light irradiation device of the present invention;

Fig. 2B schematically shows another semiconductor light-emitting element used in the light irradiation device of the present invention;

Fig. 3 schematically shows a light irradiation device of the first embodiment of the present invention;

Fig. 4 is a diagram schematically showing the light intensity distribution of the light irradiation device of the present invention;

Fig. 5 schematically shows another type of a light irradiation device of the first embodiment of the present invention;

Fig. 6 schematically shows a light irradiation device of a second embodiment of the present invention;

7A to 7C show various examples of the light irradiation device of the present invention;

Fig. 8 schematically illustrates the results of photodynamic therapy of PHOTOFRIN drug using the light irradiation device of the present invention.

Detailed ways

FIG. 2A schematically shows a semiconductor light emitting element used in the light irradiation device of the present invention. As shown in Figure 2A, a light-emitting diode chip (LED die) 3 is arranged on a cup-shaped conductive frame (cup-type leadframe) 4, and the light-emitting diode chip 3 is connected to another conductive frame 6 by a wire 5; wherein , the conductive frame 6 is arranged parallel to the cup-shaped conductive frame 4 . There is a conductive adhesive layer 7 between the cup-shaped conductive frame 4 and the LED chip 3, and the conductive adhesive layer 7 is a silver layer, a gold layer, an aluminum layer or a nickel layer and the like. In addition, the cup-shaped conductive frame 4 is made of copper, copper alloy or iron alloy. Finally, a first encapsulation material 8 encapsulates the light-emitting diode chip 3 and forms a semiconductor light-emitting element on the conductive frames 4 and 6 .

FIG. 2B schematically shows another semiconductor light emitting element used in the light irradiation device of the present invention. As shown in Figure 2B, a light-emitting diode chip 3 is arranged on a printed circuit board (prlnted circuit board referred to as PCB) 9 with a conductive circuit, and a reflective side wall 10 surrounding the light-emitting diode chip 3 is formed around the PCB 9 . Furthermore, the LED chip 3 is connected to the conductive circuit of the printed circuit board 9 via a wire 5 . Finally, a first encapsulation material 8 encapsulates the light-emitting diode chip 3 and the PCB 9 to form another semiconductor light-emitting element.

first embodiment

FIG. 3 schematically shows a light irradiation device according to a first embodiment of the present invention. As shown in FIG. 3 , a supporting substrate 21 is generally semi-spherical, and several semiconductor light emitting elements 20 are disposed on the supporting substrate 21 . Therefore, the plurality of semiconductor light emitting elements 20 collectively emit light beams toward the center of the hemispherical support substrate 21 , and the light beams have a converging area 22 .

Referring to FIG. 3 , the support substrate 21 is bonded to a heat sink 24 through a thermal conductive paste 23 . A fan 25 and radiator 24 are provided opposite to each other. When the light irradiation device emits light, the fan 25 and the radiator 24 dissipate the heat energy generated by the semiconductor light emitting elements 20 .

Referring to FIG. 3 , in the first embodiment of the present invention, the light irradiation device applied to photodynamic therapy includes a light guide 26 , such as an optical fiber, one end of which is disposed in the converging area 22 where the light beam is generated. Therefore, when several semiconductor light emitting elements 20 emit light, most of the light is delivered to the site requiring photodynamic therapy through the light guide 26 .

Fig. 4 is a diagram schematically showing the light intensity distribution of the light irradiation device of the present invention. As shown in Figure 4, as one end of the light guide is farther away from the optical axis. The light intensity emitted by the light guide gradually decreases. In addition, as the distance between one end of the light guide and the light source increases, the light intensity emitted by the light guide decreases gradually. In the first embodiment of the present invention, the light irradiation device applied to photodynamic therapy emits a light intensity of 216.9 mW/cm ² through the light guide.

FIG. 5 schematically shows another form of a light irradiation device according to the first embodiment of the present invention. The support substrate 21 in the first embodiment of the present invention can be made of elastic material, semi-elastic material or hard material, such as ceramic, polymer material or metal material. When the support substrate 21 is made of a hard material, such as ceramics, referring to FIG. 3 , several support substrates 21a, 21b, 21c form a hemispherical structure. When elastic material is selected as the support material, such as polymer material, referring to FIG. 5 , the support substrate 21 deforms to form a hemispherical structure.

second embodiment

FIG. 6 schematically shows a light irradiation device according to a second embodiment of the present invention. As shown in FIG. 6 , several semiconductor light emitting elements 20 are formed on a planar support substrate 21 ; wherein each semiconductor light emitting element 20 emits a substantially collimated light beam. In the second embodiment of the present invention, the light irradiation device further includes a positive lens 28 . After several semiconductor light emitting elements 20 emit collimated beams, the collimated beams are concentrated by the positive lens 28 to form a converging area 22 .

Referring to FIG. 6 , the support substrate 21 is bonded to a heat sink 24 through a thermal conductive paste 23 . Next, a fan 25 and a heat sink 24 are arranged opposite to each other. When the light irradiation device emits light, the fan 25 and the radiator 24 dissipate the heat energy generated by the semiconductor light emitting elements 20 .

Referring to FIG. 6, in the first embodiment of the present invention, the light irradiation device applied to photodynamic therapy further includes a light guide 26, such as an optical fiber, one end of which is arranged on a positive lens 28 to form a collimated light beam into a converging area 22 . Therefore, when several semiconductor light emitting elements 20 emit light, most of the light is delivered to the site requiring photodynamic therapy through the light guide 26 .

In the first embodiment and the second embodiment of the present invention, after a plurality of semiconductor light emitting elements 20 are disposed on the supporting substrate 21 , the plurality of semiconductor light emitting elements 20 and the supporting substrate 21 are encapsulated by the second packaging material 27 . In the second embodiment of the present invention, the second encapsulation material 27 has a micro-lens array structure 29 to convert the light beams emitted by the plurality of semiconductor light emitting elements 20 into more collimated light beams.

7A to 7C respectively show various examples of the light irradiation device of the present invention. As shown in FIG. 7A , in the light irradiation device 100 of the present invention, the light guide 26 has a fixed diameter. As shown in FIG. 7B , in the light irradiation device 100 of the present invention, the other end of the light guide 26 has a tapered structure 30 . The light beam emitted by the light pipe shown in FIG. 7B has a smaller cross-sectional area than the light beam emitted by the light pipe shown in FIG. 7A .

In addition, in FIGS. 7A and 7B , a DC power supply 31 is disposed in the light irradiation device 100 of the present invention. Referring to FIG. 7C , the light irradiation device 100 of the present invention can further use an AC-DC conversion power supply 32 . Therefore, power is supplied to the light irradiation device of the present invention through an outlet of a building.

Fig. 8 is a schematic illustration of the photodynamic therapy results of PHOTOFRIN drug using the light irradiation device of the present invention; wherein, the light emission wavelength of the light irradiation device of the present invention is 630nm. Referring to FIG. 8, the abscissa represents the time when the photoirradiation device of the present invention irradiates the PHOTORIN drug, and the ordinate represents the survival rate of cells having PHOTOFRIN drug after being irradiated by the photoirradiation device of the present invention. As shown in FIG. 8 , after the photoirradiation device of the present invention irradiates cells with PHOTOFRIN drug, the survival rate of the cells can indeed be reduced.

In the present invention, since different drugs respond to different wavelengths, light-emitting diode chips with different wavelengths can be arranged in the light irradiation device of the present invention.

Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art may make some changes and modifications without departing from the spirit and scope of the present invention. Therefore The protection scope of the present invention shall be determined by the claims.

Claims (24)

1. A light irradiation device, suitable for photodynamic therapy, has a body, which includes: a supporting substrate, which is in the shape of a hemisphere; Several semiconductor light-emitting elements with light-emitting diode chips are arranged on the above-mentioned support substrate, and each semiconductor light-emitting element emits a light beam toward the center of the hemisphere, and the light beam has a converging area; A heat sink, bonded to the above-mentioned support substrate, wherein when the semiconductor light emitting element emits light, the heat sink absorbs the heat energy generated by the semiconductor light emitting element; a fan for removing heat from the heat sink and lowering the temperature in the light irradiation device; and A power supply device supplies current to the semiconductor light-emitting element and the above-mentioned fan. 2 . The light irradiation device according to claim 1 , further comprising a light guide disposed in the converging area of the light beam, so that the light beam emitted by the semiconductor light-emitting element generally enters the light guide. 3 . 3 . The light irradiation device according to claim 1 , further comprising a thermally conductive adhesive for bonding the heat sink to the support substrate. 4 . 4. The light irradiation device according to claim 1, wherein the power supply is a DC power supply 5. The light irradiation device as claimed in claim 1, wherein the power supply is an AC-DC conversion power supply. 6. The light irradiation device according to claim 1, characterized in that: each of the semiconductor light emitting elements comprises: Cup-shaped conductive frame; A conductive frame, arranged in parallel with the above-mentioned cup-shaped conductive frame; A light-emitting diode chip is arranged on the above-mentioned cup-shaped conductive frame, and the light-emitting diode chip is connected to the conductive frame by a wire; and A first packaging body covering the light emitting diode chip, the cup-shaped conductive frame and the conductive frame. 7. The light irradiation device as claimed in claim 1, wherein the material of the supporting substrate is selected from the group consisting of ceramic materials, polymer materials and metal materials. 8. The light irradiation device as claimed in claim 6, wherein the material of the cup-shaped conductive frame is selected from the group consisting of copper, copper alloy and iron alloy. 9. The light irradiation device as claimed in claim 6, further comprising a conductive adhesive layer formed between the cup-shaped conductive frame and the light-emitting diode chip. 10. The light irradiation device as claimed in claim 9, wherein the conductive adhesive layer is selected from the group consisting of silver layer, gold layer, aluminum layer and nickel layer. 11. The light irradiation device according to claim 1, characterized in that: each of the semiconductor light emitting elements comprises: a printed circuit board having a conductive circuit and a reflective sidewall surrounding the printed circuit board; A light-emitting diode chip is arranged on the above-mentioned printed circuit board, and the light-emitting diode chip is connected to the conductive circuit of the printed circuit board by a wire; and A first packaging body, covering the above-mentioned light-emitting diode chip and printed circuit board. 12 . The light irradiation device according to claim 1 , further comprising a second packaging body covering the semiconductor light emitting element and the supporting substrate. 13 . 13. A light irradiation device, suitable for photodynamic therapy, has a body, which includes: a support substrate, which is in a planar shape; Several semiconductor light-emitting elements with light-emitting diode chips are arranged on the above-mentioned support substrate, and the semiconductor light-emitting elements emit a collimated light beam; A positive lens concentrates the above-mentioned collimated light beam and produces a converging area; A heat sink, bonded to the above-mentioned support substrate, wherein when the semiconductor light emitting element emits light, the heat sink absorbs the heat energy generated by the semiconductor light emitting element; a fan for removing heat from the heat sink and lowering the temperature in the light irradiation device; and A power supply provides current to the semiconductor light-emitting element and the above-mentioned fan. 14 . The light irradiation device according to claim 13 , further comprising a light guide disposed in the converging area of the light beam, so that the light beam emitted by the semiconductor light emitting element generally enters the light guide. 15 . 15. The light irradiation device as claimed in claim 13, further comprising a thermally conductive adhesive for bonding the heat sink to the support substrate. 16. The light irradiation device as claimed in claim 13, wherein the power supply is a DC power supply. 17. The light irradiation device as claimed in claim 13, wherein the power supply is an AC-DC conversion power supply. 18. The light irradiation device according to claim 13, characterized in that: each of the semiconductor light emitting elements comprises: Cup-shaped conductive frame; A conductive frame, arranged in parallel with the above-mentioned cup-shaped conductive frame; A light-emitting diode chip is arranged on the above-mentioned cup-shaped conductive support, and the light-emitting diode chip is connected to the conductive support by a wire; and A first packaging body covering the light emitting diode chip, the cup-shaped conductive frame and the conductive frame. 19. The light irradiation device as claimed in claim 13, wherein the material of the supporting substrate is selected from the group consisting of ceramic materials, polymer materials and metal materials. 20. The light irradiation device as claimed in claim 18, wherein the material of the cup-shaped conductive frame is selected from the group consisting of copper, copper alloy and iron alloy. 21. The light irradiation device as claimed in claim 18, further comprising a conductive adhesive layer formed between the cup-shaped conductive frame and the light-emitting diode chip. 22. The light irradiation device as claimed in claim 21, wherein the conductive adhesive layer is selected from the group consisting of silver layer, gold layer, aluminum layer and nickel layer 23. The light irradiation device according to claim 13, characterized in that: each of the semiconductor light emitting elements comprises: A printed circuit board having a conductive circuit and a reflective sidewall surrounding the printed circuit board: A light-emitting diode chip is arranged on the above-mentioned printed circuit board, and the light-emitting diode chip is connected to the conductive circuit of the printed circuit board by a wire; and A first packaging body, covering the above-mentioned light-emitting diode chip and printed circuit board. 24. The light irradiation device as claimed in claim 13, further comprising a second packaging body covering the semiconductor light emitting element and the supporting substrate.

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