CN1267001A - Photoetching resin composition contg cyclic olefin polymer and saturated steroid additive - Google Patents
Photoetching resin composition contg cyclic olefin polymer and saturated steroid additive Download PDFInfo
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- CN1267001A CN1267001A CN 00101869 CN00101869A CN1267001A CN 1267001 A CN1267001 A CN 1267001A CN 00101869 CN00101869 CN 00101869 CN 00101869 A CN00101869 A CN 00101869A CN 1267001 A CN1267001 A CN 1267001A
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- cyclic olefin
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- olefin polymer
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- 229920000089 Cyclic olefin copolymer Polymers 0.000 title claims abstract description 31
- 238000001259 photo etching Methods 0.000 title claims description 45
- 229920006395 saturated elastomer Polymers 0.000 title claims description 24
- 150000003431 steroids Chemical class 0.000 title abstract description 4
- 239000000654 additive Substances 0.000 title description 7
- 230000000996 additive effect Effects 0.000 title description 7
- 239000011342 resin composition Substances 0.000 title 1
- 239000000203 mixture Substances 0.000 claims abstract description 75
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 62
- 239000002253 acid Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims description 41
- -1 steroid compound Chemical class 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 29
- 238000003384 imaging method Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 23
- 239000003513 alkali Substances 0.000 claims description 18
- 125000000524 functional group Chemical group 0.000 claims description 18
- 230000002378 acidificating effect Effects 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 238000012546 transfer Methods 0.000 claims description 12
- SMEROWZSTRWXGI-UHFFFAOYSA-N Lithocholsaeure Natural products C1CC2CC(O)CCC2(C)C2C1C1CCC(C(CCC(O)=O)C)C1(C)CC2 SMEROWZSTRWXGI-UHFFFAOYSA-N 0.000 claims description 10
- 239000002585 base Substances 0.000 claims description 10
- BHQCQFFYRZLCQQ-UHFFFAOYSA-N (3alpha,5alpha,7alpha,12alpha)-3,7,12-trihydroxy-cholan-24-oic acid Natural products OC1CC2CC(O)CCC2(C)C2C1C1CCC(C(CCC(O)=O)C)C1(C)C(O)C2 BHQCQFFYRZLCQQ-UHFFFAOYSA-N 0.000 claims description 7
- 239000004380 Cholic acid Substances 0.000 claims description 7
- 229960002471 cholic acid Drugs 0.000 claims description 7
- 235000019416 cholic acid Nutrition 0.000 claims description 7
- KXGVEGMKQFWNSR-UHFFFAOYSA-N deoxycholic acid Natural products C1CC2CC(O)CCC2(C)C2C1C1CCC(C(CCC(O)=O)C)C1(C)C(O)C2 KXGVEGMKQFWNSR-UHFFFAOYSA-N 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- SMEROWZSTRWXGI-HVATVPOCSA-N lithocholic acid Chemical compound C([C@H]1CC2)[C@H](O)CC[C@]1(C)[C@@H]1[C@@H]2[C@@H]2CC[C@H]([C@@H](CCC(O)=O)C)[C@@]2(C)CC1 SMEROWZSTRWXGI-HVATVPOCSA-N 0.000 claims description 7
- 125000006239 protecting group Chemical group 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 6
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 5
- BHQCQFFYRZLCQQ-OELDTZBJSA-N cholic acid Chemical compound C([C@H]1C[C@H]2O)[C@H](O)CC[C@]1(C)[C@@H]1[C@@H]2[C@@H]2CC[C@H]([C@@H](CCC(O)=O)C)[C@@]2(C)[C@@H](O)C1 BHQCQFFYRZLCQQ-OELDTZBJSA-N 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 5
- 125000002723 alicyclic group Chemical group 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 125000004185 ester group Chemical group 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- MBRONKAWNJIYKQ-YCHOJBIXSA-N tert-butyl (4r)-4-[(3r,5r,8r,9s,10s,12s,13r,14s,17r)-3,12-dihydroxy-10,13-dimethyl-2,3,4,5,6,7,8,9,11,12,14,15,16,17-tetradecahydro-1h-cyclopenta[a]phenanthren-17-yl]pentanoate Chemical compound C([C@H]1CC2)[C@H](O)CC[C@]1(C)[C@@H]1[C@@H]2[C@@H]2CC[C@H]([C@@H](CCC(=O)OC(C)(C)C)C)[C@@]2(C)[C@@H](O)C1 MBRONKAWNJIYKQ-YCHOJBIXSA-N 0.000 claims description 2
- 125000000392 cycloalkenyl group Chemical group 0.000 claims 14
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 claims 1
- 125000005907 alkyl ester group Chemical group 0.000 claims 1
- 229940099352 cholate Drugs 0.000 claims 1
- AOMUALOCHQKUCD-UHFFFAOYSA-N dodecyl 4-chloro-3-[[3-(4-methoxyphenyl)-3-oxopropanoyl]amino]benzoate Chemical compound CCCCCCCCCCCCOC(=O)C1=CC=C(Cl)C(NC(=O)CC(=O)C=2C=CC(OC)=CC=2)=C1 AOMUALOCHQKUCD-UHFFFAOYSA-N 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 10
- 229920000642 polymer Polymers 0.000 abstract description 2
- 239000012670 alkaline solution Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 32
- 150000001925 cycloalkenes Chemical group 0.000 description 25
- 238000001459 lithography Methods 0.000 description 13
- 239000002904 solvent Substances 0.000 description 12
- 239000000178 monomer Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 7
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 6
- QAEDZJGFFMLHHQ-UHFFFAOYSA-N trifluoroacetic anhydride Chemical compound FC(F)(F)C(=O)OC(=O)C(F)(F)F QAEDZJGFFMLHHQ-UHFFFAOYSA-N 0.000 description 6
- 238000009472 formulation Methods 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000002671 adjuvant Substances 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 3
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 229920000098 polyolefin Polymers 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical group COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- WLLGXSLBOPFWQV-UHFFFAOYSA-N MGK 264 Chemical compound C1=CC2CC1C1C2C(=O)N(CC(CC)CCCC)C1=O WLLGXSLBOPFWQV-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000005864 Sulphur Substances 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000007600 charging Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- MBAKFIZHTUAVJN-UHFFFAOYSA-I hexafluoroantimony(1-);hydron Chemical compound F.F[Sb](F)(F)(F)F MBAKFIZHTUAVJN-UHFFFAOYSA-I 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- YFSUTJLHUFNCNZ-UHFFFAOYSA-N perfluorooctane-1-sulfonic acid Chemical class OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F YFSUTJLHUFNCNZ-UHFFFAOYSA-N 0.000 description 2
- 229940079877 pyrogallol Drugs 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 2
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical class OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- UZUCFTVAWGRMTQ-UHFFFAOYSA-N 1-methyladamantane Chemical compound C1C(C2)CC3CC2CC1(C)C3 UZUCFTVAWGRMTQ-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical class CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical group O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000005210 alkyl ammonium group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229960000846 camphor Drugs 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010280 constant potential charging Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- CSYSRRCOBYEGPI-UHFFFAOYSA-N diazo(sulfonyl)methane Chemical compound [N-]=[N+]=C=S(=O)=O CSYSRRCOBYEGPI-UHFFFAOYSA-N 0.000 description 1
- 150000008056 dicarboxyimides Chemical class 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- GSVFUDVAIVZXQD-UHFFFAOYSA-N ditert-butyl(phenyl)-$l^{3}-iodane Chemical compound CC(C)(C)I(C(C)(C)C)C1=CC=CC=C1 GSVFUDVAIVZXQD-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 235000011194 food seasoning agent Nutrition 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical class CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- YCWSUKQGVSGXJO-NTUHNPAUSA-N nifuroxazide Chemical group C1=CC(O)=CC=C1C(=O)N\N=C\C1=CC=C([N+]([O-])=O)O1 YCWSUKQGVSGXJO-NTUHNPAUSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229960004624 perflexane Drugs 0.000 description 1
- ZJIJAJXFLBMLCK-UHFFFAOYSA-N perfluorohexane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F ZJIJAJXFLBMLCK-UHFFFAOYSA-N 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 150000003232 pyrogallols Chemical class 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- UOUFRTFWWBCVPV-UHFFFAOYSA-N tert-butyl 4-(2,4-dioxo-1H-thieno[3,2-d]pyrimidin-3-yl)piperidine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCC(CC1)n1c(=O)[nH]c2ccsc2c1=O UOUFRTFWWBCVPV-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 125000004044 trifluoroacetyl group Chemical group FC(C(=O)*)(F)F 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 229940045860 white wax Drugs 0.000 description 1
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Acid-catalyzed positive photoresist compositions which are imageable with 193nm radiation and are developable to form photoresist structures of high resolution, the compound can be comprise of cycloolefine polymer, photosensitive acid and saturation steroid. The cyclic olefin polymers contain (i) cyclic olefin units having polar functional moieties, and (ii) cyclic olefin units having acid labile moieties that inhibit solubility in aqueous alkaline solutions.
Description
What submit to simultaneously with the application is that title is that " photoetching compositions of band olefin polymer and hydrophobic on-steroidal alicyclic additive " sequence number is 09/266343 U.S. Patent application; Title is that the sequence number of " photoetching compositions of band olefin polymer and hydrophobic-non-stero superfatted ring adjuvant " is 09/266341 U.S. Patent application; And title is 09/266342 U.S. Patent application for the sequence number of " photoetching compositions of band olefin polymer and adjuvant ", and the disclosure of above-mentioned application is received data for referencial use at this paper.
In microelectronics industry and relate in other industry that microstructure (for example micromachine, magnetic resistance is first-class) makes up, constantly wish to reduce the size of structure member.In microelectronics industry, this requirement is the circuit that reduces the size of microelectronic component and/or greater number is provided for a given chip size.
The ability of gadget more made is subjected to differentiating reliably more, and the restriction of the photoetching technique ability of minor structure and spacing is determined by optical property, obtain more fine resolution ability, partly be subjected to restriction in order to light (or other radiation) wavelength that produces the lithography figure.Therefore, in photolithography process, constantly tend to use short wavelength.Recently, this tendency is to turn to from so-called I beta radiation (350nm) to use the 248nm radiation.
In order further to reduce size, it seems needs to use the radiation of 193nm.Unfortunate, general and be not suitable for more short wavelength as the photoetching compositions of 248nm photolithography technology core in recent years.
Photoetching compositions is except the optical property that must have the people expectation that can differentiate figure under required radiation wavelength, and this photoetching compositions also must be transferred to figure the suitable chemical property and the mechanical property of following substrate layer by imaging and photo-etching glue.Therefore, the eurymeric photoresist that is exposed by imaging must be able to be made suitable dissolution response (promptly exposure area selective dissolution), to generate required photoresist structure thing.Along with the use of liquid alkali developing liquid, photolithography has obtained broad experience, and this is very important for produce suitable solubility behavior in this class universal developer.
The photoresist structure thing (after the development) of imaging must have enough corrosion stabilities so that can be figure transfer to lower floor.General is, carries out figure transfer with the wet chemical etching or the ion-etching of certain form.The imaging and photo-etching glue-line is the key property of photoetching compositions to the ability of restraining oneself (being the corrosion stability of photoresist layer) of image transfer etching process.
Although yet some photoetching compositions have been designed to these compositions of 193nm ray owing to lack the performance of one or more above-mentioned scopes, thereby can not embody the real resolution advantage that short wavelength's imaging is had usually.Therefore, what need concerning photoetching compositions is that it can carry out imaging by enough short wavelength radiations (for example 193nm ultraviolet rays), and has good development and corrosion stability.
The invention provides a kind of photoetching compositions with high-resolution lithography function (particularly when using 193nm imaging irradiation).Photoetching compositions of the present invention has imaging capability.Development capability and be that the figure conversion provides required corrosion stability three kinds of combination properties with high resolution very, and high resolution is only to be subjected to the restriction of imaging illumination wavelength.The total characteristic of photoetching compositions of the present invention is to exist (a) cycloolefine polymer component to reach (b) saturated steroid compound component.
The present invention also provides and uses photoetching compositions of the present invention to make the lithography of taking pictures of photoresist structure thing, and uses this photoresist structure thing with the method for figure transfer to lower floor.The preferred feature of the lithography of taking pictures of the present invention is to use the 193nm ultraviolet rays to carry out the imaging exposure.Method of the present invention does not adopt phase shift mask and preferably can differentiate size less than about 150nm, is more preferably less than the size (using 0.68 numerical value aperture optics instrument) of 115nm.
On the one hand, the present invention includes a kind of photoetching compositions that comprises following material:
(a) cyclic olefin polymer, it contains:
I) have the cycloalkene unit of polar functional group, and
The cycloalkene unit that ii) has the acid labile group, and the acid labile group presses down
Solubleness in the system aqueous alkali,
(b) photolytic activity component, and
(c) saturated steride component.
Cyclic olefin polymer of the present invention preferably mainly is made up of the cycloolefin monomers unit, more preferably mainly by unit i) and the unit ii) form.Unit i) preferably comprises its pK
a≤ 13 polar acidic group.Described saturated steroid compound is preferably hydrophobic.Preferred saturated steroid compound is the lithocholate of modification.
On the other hand, present invention resides in the method for the photoresist structure thing of making imaging on the substrate, the method comprises:
(a) provide the substrate that has photoetching compositions superficial layer of the present invention,
(b) make photoresist layer carry out the imaging exposure with radiation method, thereby make the photoresist layer each several part by radiant exposure, and
(c) photoresist layer is contacted with liquid alkali developing solution, remove the exposed portion of photoresist layer, to form the photoresist structure thing of imaging.
Used radiation is the 193nm ultraviolet rays in the preferred said method step (b).
The present invention also comprises the method for making conductor structure, semiconductor structure, magnetic texure or insulation system with the plastic structure of the imaging and photo-etching thing that contains the present composition.
Below these and other aspects of the present invention are more gone through.
The general features of photoetching compositions of the present invention is to exist (a) cyclic olefin polymer to reach (b) saturated steroid compound component.Cyclic olefin polymer is characterised in that and has at least a cycloolefin monomers unit.This cyclic olefin polymer preferably contains: i) have the cycloalkene unit of polar functional group, and ii) have the cycloalkene unit of acid labile group, and the acid labile group can suppress the solubleness in the aqueous alkali.These compositions especially can generate take pictures lithography figure, these compositions of high resolution and have good development capability and figure transfer performance when using the 193nm ray.
The present invention also comprises the plastic structure of the imaging and photo-etching thing that contains photoetching compositions of the present invention, and makes the method for photoresist structure thing and make the method for conductor structure, semiconductor structure and/or insulation system with these photoresist structure things.
Photoetching compositions of the present invention preferably contains:
(a) cyclic olefin polymer, it comprises:
I) have the cycloalkene unit of polar functional group, these polar functional groups are selected from acidic-group (they promote the solubleness in aqueous alkali) and non-acid polar group, and
The cycloalkene unit that ii) has the acid labile group, and these acid labile groups suppress the solubleness in the aqueous alkali,
(b) photolytic activity component, and
(c) saturated steride component.
Cycloalkene unit i) can be any cycloolefin monomers unit that has polar acidic functional group (this functional group promotes alkali solubility), or have the cycloolefin monomers unit of nonacid polar group.The example of cycloolefin monomers comprises the illustrated monomer of following structural (I), R in the formula
1Represent polar group, n is 0 or some positive integer:
Preferred cycloolefin i) be selected from:
R in the formula
1Represent polar acidic base (it promotes the solubleness in the aqueous alkali) or nonacid polar group.The pK of preferred polar acidic base
a≤ 13.Preferred polar acidic base is selected from carboxyl, sulfamic, fluorine alcohol radical or other polar acidic bases.Preferred polar acidic base is a carboxyl.The preferred pK of nonacid polar group
a＞13, and contain at least one heteroatoms, for example oxygen, nitrogen or sulphur.If desired, can use cycloalkene unit i with opposed polarity functional group) potpourri.Preferred cycloalkene unit i) at least some or whole should have polar acidic functional group.
Cycloalkene unit ii) can be any acid-unstable group cycloolefin monomers of (it suppresses the solubleness in the aqueous alkali) that contains.The example of this cycloolefin monomers comprises the following monomer that following array structure (III) is illustrated, R in the formula
2Represent the acid labile protecting group, n is zero or some positive integer:
Preferred cycloalkene unit ii) is selected from:
R in the formula
2Represent the acid labile protecting group.Preferred acid labile protecting group is selected from tertiary alkyl (or naphthenic base) ester (tert-butyl group for example, methylcyclopentyl, methylcyclohexyl, the ester of methyl adamantane base, the ketals, or ester acetal of carboxylic acid.Carboxylic acid tert-butyl ester is most preferred acid labile protecting group, if desired, can use the cycloalkene unit potpourri ii) that contains different protection functional groups.
In order to use at the lithography of taking pictures that is used for making integrated circuit structure or other micromechanisms, cyclic olefin polymer of the present invention preferably contains at least about 20% mole of cycloalkene unit ii), more preferably about 40-90% mole most preferably is about 60-90% mole.Cyclic olefin polymer of the present invention preferably contains the 10-80% mole cycloalkene unit i that has an appointment), more preferably about 10-60% mole.At cycloalkene unit i) contain the occasion of carboxylic acid polar group, the content of these unit in whole cyclic olefin polymerization compositions, is preferably about 5-30% mole, and more preferably about 10-25% mole most preferably is about 10-20% mole.At cycloalkene unit i) contain the occasion of the acid polar group of sulfamic, the content of these unit is preferably about 15-50% mole in whole cyclic olefin polymerization compositions, more preferably about 20-40% mole.Cyclic olefin polymer of the present invention is except containing unit i) and the unit ii), also can contain other monomeric units.Preferred cyclic olefin polymer of the present invention contains have an appointment 40% mole or other monomeric units of this class still less, more preferably about 20% mole or still less.Cyclic olefin polymer most preferably of the present invention is mainly by cycloalkene unit i) and ii) form.
The feature of photoetching compositions of the present invention also is to exist saturated steroid compound (" SS ") component.This SS component has and can differentiate the ability of ultra-fine lithography figure, and/or improved this ability after with general alkali lye developing liquid developing.The SS component is characterised in that and has at least one saturated steroid (C
17) the alicyclic ring skeleton structure.This saturated steroid compound component can comprise one and have a plurality of saturated steroid compounds compound (for example two sterides or three steride) partly.Preferred SS component contains one or more side groups, and side group is selected from acid labile group (group that for example a kind of acid that photolithography process is produced can be reacted, because this kind reaction is separated this basic capsule, formation can promote the molecule of alkali solubility).Preferred SS component can contain additional side group, for example is selected from groups such as formoxyl, hydroxyl or trifluoroacetyl group.If have acid labile side group (one or more) then they can be separated as shown in structure SL-1 and SL-2 by one or more intervals group.Usually, more hydrophobic SS component is preferred.If desired, can use the potpourri of SS component.
The example of preferred SS component comprises cholic acid ester (for example the lithocholic acid tert-butyl ester, the deoxycholic acid tert-butyl ester, the cholic acid tert-butyl ester), ester modified lithocholate class (the 3-trifluoroacetyl lithocholic acid tert-butyl ester for example, the 3-acetyl lithocholic acid tert-butyl ester, the 3-pivaloyl lithocholic acid tert-butyl ester), ester modified cholic acid ester (for example 3,7, the 12-three formyl cholic acid tert-butyl esters, three-(3,7, the 12-trifluoroacetyl) the cholic acid tert-butyl ester), and the isolated lithocholate of the ester group shown in following structure SL-1 and SL-2.
TBu is the tert-butyl group in the formula.Most preferred SS component is the 3-trifluoroacetyl lithocholic acid tert-butyl ester.
Except the cyclic olefin polymerization beyond the region of objective existence, photoetching compositions of the present invention also comprises photosensitive acid agent (PAG).The invention is not restricted to use the potpourri of any special PAG or PAG, that is, use the known various photosensitive acid agents of prior art all can obtain advantage of the present invention.Preferred PAG contains those of a small amount of (or preferably not containing) aromatic group.Contain in use under the situation of aryl PAG, PAG can limit the amount of its PAG that may contain in prescription in the absorption characteristic at 193nm place.
The example of suitable photosensitive acid agent comprises (but preferably having replaced any one or more aryl of having pointed out with alkyl) salt, hexafluoro-antimonic acid triaryl sulphur for example, hexafluoro-antimonic acid diaryl iodine, the hexafluoroarsenate salt, the trifluoro-methanyl sulfonate class, perfluoroalkane sulfonates class (perfluoromethane sulfonate for example, perfluorinated butane, perflexane sulfonate, PFO, or the like), the aromatic sulfonic acid salt of replacement, pyrogallol class (three mesylates of pyrogallol for example for example, or three (sulfonate) of pyrogallol), the sulphonic acid ester of hydroxyl acid imide, N-sulphonyl chomene dicarboximide class (N-camphor sulphonyl chomene dicarboximide, N-phenyl-pentafluoride sulphonyl chomene dicarboximide), α, α '-two sulphonyl diazomethane classes, 4-diazo naphthoquinone class, alkyl two sulfone classes, or the like.
Before being used for required substrate, photoetching compositions of the present invention generally contains solvent.This solvent can be any usually and the solvent that share of acid catalyzed photoresist, in other respects it to the performance of photoetching compositions without any tangible deleterious effect.Preferred solvent is propylene glycol methyl ether acetate, cyclohexanone and ethyl cellosolve acetate.
As is known in the art, composition of the present invention also can contain a little auxiliary component again, as dyestuff/sensitizer, and alkalinity additive or the like.Preferred alkalinity additive is a weak base, and it can be disposed the acid of trace and the performance of photoresist not had too much influence.Preferred alkalinity additive is a for example tert-butyl group ammonium hydroxide (TBAH) of (aliphatic series or alicyclic ring) tertiary amines or tertiary alkyl ammonium hydroxide class.
Photoetching compositions of the present invention in the general assembly (TW) of cyclic olefin polymer in the composition, preferably contains the photosensitive acid agent of 0.5～20% weight of having an appointment (more preferably about 3-15% weight).Have the occasion of solvent, all composition preferably contains the solvent of 50～90% weight of having an appointment.In this composition,, preferably contain have an appointment 1% weight or this alkalinity additive still less in the general assembly (TW) of acid-sensitive polymkeric substance.Photoetching compositions of the present invention in the general assembly (TW) of cyclic olefin polymer in the composition, preferably contains the SS component at least about 5% weight, and more preferably about 10-25% weight most preferably is about 10-20% weight.
The present invention does not limit and is used for synthetic cyclic olefin polymer synthetic method of the present invention.Preferred cyclic olefin polymer is made with polyaddition reaction.Suitable method for making is disclosed in assigns in the United States Patent (USP) 5,468,819 and 5,705,503 of B.F.Goodrich Company, and these disclosures are received document for referencial use at this.
The weight-average molecular weight of cyclic olefin polymer of the present invention is preferably about 5,000～100,000, more preferably about 10,000～50,000.
Photoetching compositions of the present invention can adopt usual way, by cyclic olefin polymer, and PAG, SS component and any other required composition are admixed together and make.The photoetching compositions that is used for photolithography process contains a large amount of solvents usually.
Photoetching compositions of the present invention is specially adapted to make on the semiconductor chip photolithography process of integrated circuit.This composition is specially adapted to adopt the photolithography process of 193nm ray, when need with other rays (medium ultraviolet for example, the 248nm deep ultraviolet, X ray or electron beam) time, can adjust (if necessary) to said composition by in said composition, adding the suitable dyestuff or the way of sensitizer.Photoetching compositions of the present invention will give description below at the photolithographic common usage of semiconductor.
The application of semiconductor photolithography generally comprises the material layer of figure transfer above semiconductor chip.Material layer on the semiconductor chip can be a metal conductor layer, ceramic insulating layer, and semiconductor layer or other materials layer, this depends on the stage and the required material of final products of manufacture process.In many cases, all should on this material, be coated with before the resist coating layer with anti-reflection coating (ARC).This ARC layer can be any ARC commonly used that is complementary with acid catalyzed photoresist.
In general, adopt spin-coating method or method for distinguishing that solvent-laden photoetching compositions is coated onto on the required semiconductor chip, the substrate that preferably will have photoresist coating then heats (baking before the exposure) to remove the adhesiveness of desolvating and improving photoresist layer.Institute's resist coating is preferably thin as much as possible, its prerequisite is that thickness is preferably uniform basically, and this photoresist layer be enough to stand subsequently make the process (generally be reactive ion-etching) of lithography figure transfer to the following base sheet bed of material.Baking procedure preferably carried out more preferably about 15 seconds to 1 minute about 10 seconds to 15 minutes before the exposure.The prebake conditions temperature can be different, and this depends on the photoresist glass transition temperature, and prebake conditions is carried out at least under the temperature that is lower than 20 ℃ of Tg before the preferred exposure.
After solvent is removed, photoresist layer is carried out the imaging exposure with required ray (for example 193nm ultraviolet rays).Using the scanning particle beams, for example the occasion of electron beam is carried out the imaging exposure by described particle beams scanning is crossed substrate and is selectively used for required figure.More in general, in wavy radiation, the occasion of 193nm ultraviolet rays for example, the imaging exposure is undertaken by the photomask that covers on photoresist layer.Concerning the 193nm ultraviolet rays, the total exposure energy is preferably about 100 milli Jiao/cm
2Or littler, more preferably about 50 milli Jiao/cm
2Or littler (15-30 milli Jiao/cm for example
2).
After having carried out required imaging exposure, photoresist layer is generally toasted further to finish acid catalyzed reaction and to improve the contrast of exposure figure.The back baking is more preferably carried out under about 125-160 ℃ preferably at about 100-175 ℃.The back baking was preferably carried out about 30 seconds to 5 minutes.
After the baking of back, by photoresist layer is contacted the photoresist structure thing that obtains to have required figure with aqueous slkali, aqueous slkali optionally dissolves by the photoresist zone of radiant exposure.Preferred aqueous slkali (developer) is a Tetramethylammonium hydroxide.Preferred photoetching compositions of the present invention can be developed by conventional 0.26N aqueous alkali.Also available 0.14N of photoetching compositions of the present invention or 0.21N or other aqueous alkalis develop.The common then on-chip photoresist structure thing with gained carries out drying, to remove residual developer.The general features of photoetching compositions of the present invention is, as the photoresist structure thing corrosion stability height of product.In some cases,, utilize back silylanizing technology, can further improve the corrosion stability of photoresist structure thing by adopting the method for prior art.Composition reproducible lithography figure of the present invention.
Then, the figure transfer from the photoresist structure thing can be arrived on the following on-chip material (for example ceramic, metal or semiconductor).Typical way is to carry out this transfer with reactive ion-etching or other etching techniques.In the document about reactive ion etching, the corrosion stability of photoresist layer is a particular importance.Therefore, composition of the present invention and prepared photoresist structure thing can be used to make the material layer structures thing of figure, the metal line that may adopt in the integrated circuit (IC)-components design for example, be used to the eyelet that contacts or pass through, the ditch that insulation position (for example ripple ditch or shallow isolating trough) capacitor arrangement is used etc.
The method of making these (pottery, metal or semi-conductive) figures generally comprises: the substrate of making figure for preparation provides material layer or position, on this material layer or position, be coated with the last layer photoresist, this photoresist is carried out the imaging exposure with ray, contact the photoresist that has exposed with solvent, figure is developed, along the space in the figure material layer under the photoresist layer is carried out etching, thereby be formed with the material layer or the substrate position of figure, and remove all residual photoresists from substrate.In some cases, under photoresist layer, can use hard mask, be beneficial to figure transfer to more following material layer or position.The example of this processing method is disclosed in United States Patent (USP) 4,855,017; 5,362,663; 5,429710; 5,562,801; 5,618,751; 5,744,376; Among 5,801,094 and 5,821,469, these open source literatures are received data for referencial use here.Other graph transfer method is described in " semiconductor lithography art; principle, practice and material " (" Semiconductor Lithography; Principles; Practices; and Materials ") book the 12nd Zhanghe the 13rd chapter of Wayne Moreau work, and publishing house is Plenum Press (1988).This book is received data for referencial use here.Should be understood that the present invention is not subjected to the restriction of any special lithography technique or device architecture.
Embodiment 1 (comparative example)
In order to carry out the lithography experiment, following material (representing with weight portion) is mixed, make the photoresist formulation that contains norbornene copolymer that contains the 85% norborene tert-butyl ester (NB-t-BE) and 15% norborene carboxylic acid (NB-CA) (as side group).
Propylene glycol methyl ether acetate 37
The multipolymer 4 of NB-t-BE and NB-CA (85/15)
Perfluorooctane sulfonates di-tert-butyl-phenyl iodine 0.16
TBAH 0.008
This photoresist formulation spin coating (30 seconds) is being scribbled anti-reflection material (ArX
, Shipley Company) layer silicon chip on.On the vacuum hot plate photoresist layer 130 ℃ of soft bakings 60 seconds, generate the film of the about 0.4 μ m of thickness.Then this silicon chip is exposed with 193nm ray (0.6NA ArF, ISI steeper).Exposure figure is the arrangement lines that are low to moderate 0.1 μ m most and interval of change in size.With expose silicon chip on the vacuum hot plate in 150 ℃ of postexposure bakes of carrying out 90 seconds.Then, use 0.263N Tetramethylammonium hydroxide developer solution to photoresist developing (stirring) through graph exposure.Use scanning electron microscope (SEM) that figure is detected subsequently.The SEM figure of xsect shows and since lines mutually competition bearing against, so can not differentiate the L/S that is lower than 200nm (lines-interval to).Owing between lines, there is too much floating dirty/residue, in addition above lines-interval of 200nm to differentiating fully.
Embodiment 2
One 12 liters overhead stirrer, thermopair thermostat are housed and have in the four neck round-bottomed flasks of 1 liter of constant voltage charging hopper of nitrogen inlet adds 500 gram (1.328 moles) lithocholic acid and 4 liters of anhydrous THF.In charging hopper, add 1920mL (13.6 moles) trifluoroacetic anhydride subsequently.In ice, flask is cooled off under the logical nitrogen, and under holding temperature＜10 ℃, drip trifluoroacetic anhydride with thread.The potpourri backheat is removed solvent and excessive trifluoroacetic anhydride with rotary evaporator then to room temperature when stirring is spent the night.The intermediate of thickness is transferred to one have been upgraded in 12 liters of flasks with other 4 liters of THF.In charging hopper, add 740 gram (10 moles) tert-butyl alcohols (diluting to prevent curing with a small amount of THF).With ice flask is cooled off again, and under the situation of holding temperature below 10 ℃, add the tert-butyl alcohol with thread.When spending the night, stirring make potpourri reach room temperature.Add 200 gram solid NaHCO then
3, and continue again to stir two hours.With rotary evaporator the solvent and the excessive tert-butyl alcohol are removed subsequently, and this potpourri is added in 4 liters of ether, carefully with the saturated NaHCO of 3 * 800ml
3The liquid washing is then with 2 * 1000ml water washing.Add MgSO
4Stir 1 hour solvent seasoning, filter, evaporate with rotary evaporator.With hexane the thickness residue by contain 800 the gram silica gel huge pillar, slowly carry out wash-out.The product fraction that merges under the vacuum 40 ℃ and feed under the thin nitrogen stream and evaporate with rotary evaporator, is boiled off residual solvent to constant weight, obtain 620 gram (productive rate 88%) canescence syrupy shape products.This material under-78 ℃ from pentane well crystallization go out, obtain low melting point white wax.
Embodiment 3
This embodiment illustrates the advantage of adjuvant of the present invention.The photoresist formulation makes by following material (representing with weight portion) is mixed.
Propylene glycol methyl ether acetate 38
Poly-(norborene) 4 of band t-BE and CA group (t-BE/CA:85/15)
Perfluorooctane sulfonates two-tert-butyl-phenyl iodine 0.16
The 3-trifluoroacetyl lithocholic acid tert-butyl ester (embodiment 2) 0.4
TBAH 0.008
This photoresist formulation is spin-coated on scribbles anti-reflection material (ArX
, on silicon chip ShipleyCompany), carry out imaging exposure (193nm ray), and develop in the mode identical with embodiment 1.Use scanning electron microscope (SEM) that the gained figure is detected then.Can fine resolution 140nm and this be worth that above lines-interval is right, clear-cut.The exposure energy scope that this formulation needs is 25～35mJ/cm
2
Claims (28)
1. a photoetching compositions comprises (a) cyclic olefin polymer, and (b) photosensitive acid agent reaches (c) saturated steroid compound component.
2. the photoetching compositions of claim 1, wherein said cyclic olefin polymer comprises:
I) have the cycloalkene unit of polar functional group, and
The cycloalkene unit that ii) has the acid labile group, this acid labile group suppresses the solubleness in the aqueous alkali.
3. the composition of claim 2, wherein said cyclic olefin polymer is mainly by cycloalkene unit i) and cycloalkene unit ii) form.
4. the composition of claim 2, wherein said polar functional group is selected from pK
aValue is about 13 or littler polar acidic functional group, or pK
aNonacid polar functional group greater than 13, perhaps their potpourri.
5. the composition of claim 4, wherein said cycloalkene unit i) contain polar acidic functional group, and described polar acidic functional group comprises and is selected from following polar acidic group: carboxyl, sulfamic, fluorine alcohol radical or other polar acidic groups.
6. the composition of claim 5, wherein said polar acidic group is a carboxyl.
7. the composition of claim 2, wherein said cycloalkene unit ii) contains the acid labile protecting group, and this protecting group comprises and is selected from the carboxylic acid tertiary alkyl ester, carboxylic acid uncle cycloalkyl ester, the group of ketals or ester acetal.
8. the composition of claim 1, wherein said saturated steroid compound comprises at least one saturated C
17Steroid alicyclic ring skeleton, and this skeleton has at least one side position acid labile protecting group.
9. the composition of claim 8, wherein said saturated steroid compound also contains at least one additional side group, and this side group is selected from hydroxyl, formoxyl, acetyl group and acetyl fluoride base.
10. the composition of claim 1, wherein said saturated steroid compound component comprise and are selected from cholate, ester modified lithocholate, the steride of ester modified cholate or the isolated lithocholate of ester group.
11. the composition of claim 10; wherein said saturated steroid compound component is selected from the lithocholic acid tert-butyl ester, the deoxycholic acid tert-butyl ester, the cholic acid tert-butyl ester, the 3-trifluoroacetyl lithocholic acid tert-butyl ester; the 3-acetyl lithocholic acid tert-butyl ester, the 3-pivaloyl lithocholic acid tert-butyl ester, 3; 7; the 12-three formoxyl cholic acid tert-butyl esters, three-(3; 7, the 12-trifluoroacetyl group) the cholic acid tert-butyl ester or the isolated lithocholate structure of ester group:
TBu is the tert-butyl group in the formula.
12. the composition of claim 11, wherein said saturated steroid compound component are the 3-trifluoroacetyl lithocholic acid tert-butyl esters.
13. the composition of claim 1, wherein said composition contains the weight in cyclic olefin polymer, the described saturated steroid compound component of about 5-25% weight.
14. the composition of claim 2, wherein said cyclic olefin polymer contain the 10-80% mole cycloalkene unit i that has an appointment) and about 20-90% mole cycloalkene unit is ii).
15. what form on the substrate has a figure photoresist structure thing, described photoresist contains (a) cyclic olefin polymer, (b) photosensitive acid agent, and (c) saturated steroid compound component.
16. the photoresist structure thing of claim 15, wherein said cyclic olefin polymer comprises:
I) have the cycloalkene unit of polar functional group, and
The cycloalkene unit that ii) has the acid labile group, this acid labile group suppresses the solubleness in the aqueous alkali.
17. be formed with the method for the photoresist structure thing of figure on substrate, this method comprises:
(A) photoetching compositions is coated onto on the described substrate, forms photoresist layer on this substrate, described photoetching compositions comprises (a) cyclic olefin polymer, and (b) photosensitive acid agent reaches (c) saturated steroid compound component,
(B) described substrate is carried out the imaging exposure with ray,, produce acid because of ray makes photosensitive acid agent thus in the exposure area of described photoresist layer, and
(C) contact with this substrate with the liquid alkali developing agent solution, thus the exposure area that makes this photoresist layer gone by this developer solution is optionally molten, just show the photoresist structure thing that has become figure on this substrate.
18. the method for claim 17, wherein said cyclic olefin polymer comprises:
I) have the cycloalkene unit of polar functional group, and
The cycloalkene unit that ii) has the acid labile group, described acid labile group can suppress the solubleness in the aqueous alkali.
19. the method for claim 17, the described ray that wherein is used for step (B) is the 193nm ultraviolet rays.
20. the method for claim 17, wherein said substrate is toasted between step (B) and step (C).
21. be formed with the method for graphic material works on substrate, described material is selected from semiconductor, pottery and metal, described method comprises:
(A) provide the substrate that has described material layer,
(B) photoetching compositions is coated onto on the substrate, forms photoresist layer on described material layer, described photoetching compositions comprises (a) cyclic olefin polymer, and (b) photosensitive acid agent reaches (c) saturated steroid compound component,
(C) substrate is carried out the imaging exposure with ray,, produce acid because of ray makes described photosensitive acid agent thus in the exposure area of described photoresist layer, and
(D) contact with this substrate with the liquid alkali developing agent solution, thus the exposure area that makes this photoresist layer gone by this developer solution is optionally molten, just show the photoresist structure thing that forms figure,
(E) this photoresist structure thing figure transfer to described material layer, method is to pass space etched material layer in the described photoresist structure thing figure.
22. the method for claim 21, wherein said cyclic olefin polymer comprises:
I) have the cycloalkene unit of polar functional group, and
The cycloalkene unit that ii) has the acid labile group, described acid labile group can suppress the solubleness in the aqueous alkali.
23. the method for claim 21, wherein said material is a metal.
24. the method for claim 21, wherein said etching comprises reactive ion etching.
25. the method for claim 21 wherein provides at least one middle layer between described material layer and described photoresist layer, and step (E) comprises that passing the middle layer carries out etching.
26. the method for claim 21, the wavelength of wherein said ray is about 193nm.
27. the method for claim 21, wherein said substrate is toasted between step (C) and step (D).
28. the method for claim 21, the wavelength of wherein said ray is about 248nm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26634499A | 1999-03-11 | 1999-03-11 | |
| US09/266344 | 1999-03-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1267001A true CN1267001A (en) | 2000-09-20 |
Family
ID=23014180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 00101869 Pending CN1267001A (en) | 1999-03-11 | 2000-02-04 | Photoetching resin composition contg cyclic olefin polymer and saturated steroid additive |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1267001A (en) |
-
2000
- 2000-02-04 CN CN 00101869 patent/CN1267001A/en active Pending
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