CN120916448A - Hafnium-based ferroelectric film, preparation method and application thereof - Google Patents
Hafnium-based ferroelectric film, preparation method and application thereofInfo
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- CN120916448A CN120916448A CN202511091335.3A CN202511091335A CN120916448A CN 120916448 A CN120916448 A CN 120916448A CN 202511091335 A CN202511091335 A CN 202511091335A CN 120916448 A CN120916448 A CN 120916448A
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Abstract
The invention belongs to the technical field of advanced storage, and particularly relates to a hafnium-based ferroelectric film, a preparation method and application thereof. The chemical formula of the hafnium-based ferroelectric film is HfxMyO 2, wherein x is 0.5-1, y is 0.5-1, and M is selected from Zr, al or La. The hafnium-based ferroelectric film provided by the invention has enough stress in the growth process by accurately regulating and controlling the doping of the internal elements, so that stable ferroelectric performance is realized without annealing, the technical defect existing in annealing of the traditional hafnium-based ferroelectric film is overcome, and the hafnium-based ferroelectric capacitor compatible in the subsequent process is further obtained.
Description
Technical Field
The invention belongs to the technical field of advanced storage, and particularly relates to a hafnium-based ferroelectric film, a preparation method and application thereof.
Background
Hafnium-based ferroelectric materials are materials that are simple in constituent elements, chemically stable and retain stable ferroelectric properties at thicknesses less than 3nm, and thus exhibit significant competitive advantages due to these characteristics.
The hafnium-based ferroelectric thin film needs to exert enough stress on the external electrode during annealing to obtain stable ferroelectric characteristics, however, the hafnium-based ferroelectric material needs a higher temperature, generally more than 500 ℃, during annealing, which causes the problem that it cannot be compatible with the subsequent processes, so that many subsequent processes cannot withstand such a high temperature, which limits the application of the hafnium-based ferroelectric material in the fields of integrated circuits and microelectronic devices and reduces the commercial feasibility thereof.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention provides a hafnium-based ferroelectric thin film, a method for preparing the same, and a hafnium-based ferroelectric capacitor compatible therewith. The invention provides a hafnium-based ferroelectric film with a chemical formula of HfxMyO 2, wherein x is 0.5-0.75, y is 0.5-1, M is selected from Zr, al or La, and the hafnium-based ferroelectric film has enough stress in the growth process through accurate regulation and control of doping of internal elements, so that stable ferroelectric performance is achieved without annealing, technical defects existing in annealing of the conventional hafnium-based ferroelectric film are overcome, and a hafnium-based ferroelectric capacitor compatible in the subsequent process is further obtained.
Based on the technical purpose, the invention is realized by adopting the following technical scheme:
In a first aspect, the present invention provides a hafnium-based ferroelectric thin film having a chemical formula HfxMyO 2, wherein x is 0.5 to 0.75, y is 0.5 to 1, and M is selected from Zr, al or La.
Preferably, the stress of the hafnium-based ferroelectric film is 300MPa to 500MPa.
Preferably, the remnant polarization of the hafnium-based ferroelectric film is 43 [ mu ] C/cm < 2 > -52.3 [ mu ] C/cm < 2 >, the dielectric constant is 23-28, the piezoelectric coefficient is 42 pm/V-47 pm/V, and the hafnium-based ferroelectric film is close to polarization saturation under a low voltage of 2V-2.5V.
Preferably, the hafnium-based ferroelectric thin film is made of oxides of HfO 2 and M having a particle size of 2nm to 30 nm.
Preferably, the thickness of the hafnium-based ferroelectric film is 8 nm-10 nm.
In a second aspect, the present invention provides a method for preparing a hafnium-based ferroelectric thin film, comprising the steps of:
The oxides of HfO 2 and M were mixed according to the stoichiometric ratio of each element in HfxMyO 2 to obtain a mixed powder.
And (3) ball milling is carried out on the mixed powder, and calcination is carried out under the conditions of preset temperature of 500-600 ℃ and presintering time of 60-180 s, so that presintered mixed powder is obtained.
And (3) adopting an atomic layer deposition method, and circularly depositing the presintered mixed powder at the temperature of 250-370 ℃ to prepare the hafnium-based ferroelectric film.
In a third aspect, the present invention provides a post-compatible hafnium-based ferroelectric capacitor fabricated using the hafnium-based ferroelectric thin film described above.
Preferably, the hafnium-based ferroelectric capacitor compatible later is composed of a top electrode, a hafnium-based ferroelectric thin film, a metal layer and a substrate which are sequentially stacked from top to bottom.
The hafnium-based ferroelectric capacitor compatible later is prepared according to the following steps:
A substrate is prepared.
And depositing a metal layer on the substrate by adopting a magnetron sputtering method, and taking the metal layer as a bottom electrode.
And depositing a hafnium-based ferroelectric film on the metal layer by adopting an atomic layer deposition method.
And (3) performing physical vapor deposition on the hafnium-based ferroelectric film by using a Lift-off method or a hard mask method.
Preferably, the metal of the metal layer is selected from TiN, taN or W, and the thickness of the metal layer is 80 nm-120 nm.
Preferably, the top electrode is selected from aluminum doped zinc oxide electrodes.
Preferably, the substrate is a semiconductor substrate, which is Si, ge, siC or a thin film semiconductor.
Compared with the prior art, the invention has the following beneficial effects:
1. The invention provides a hafnium-based ferroelectric film with a chemical formula of HfxMyO 2, wherein x is 0.5-0.75, y is 0.5-1, M is selected from Zr, al or La, and the hafnium-based ferroelectric film has enough stress in the growth process through accurate regulation and control of doping of internal elements, so that stable ferroelectric performance is achieved without annealing, and the stress reaches 300-500 MPa.
2. The invention adopts an atomic layer deposition method to accurately regulate and control the doping of the internal elements of the hafnium-based ferroelectric film, so that the internal elements have enough stress in the growth process, thereby having stable ferroelectric performance without annealing, and then adopts a Lift-off method or a hard mask method to prepare the top electrode by a physical vapor deposition process, thereby realizing the preparation of the hafnium-based ferroelectric capacitor with the subsequent compatibility.
3. The invention utilizes atomic layer deposition technology, and accurately controls the types and the concentrations of doping elements in hafnium oxide by atomic layer deposition technology, so that enough stress can be provided in the crystallization process, stable ferroelectric characteristics can be obtained without annealing, the growth cycle number of a hafnium-based ferroelectric film can be accurately controlled, hafnium-based ferroelectric films with different thicknesses can be obtained, and a hafnium-based ferroelectric memory device can be finally obtained based on the films.
4. The preparation method is simple and effective, does not need high-temperature thermal annealing, and can be compatible with the subsequent process. The thickness of the hafnium oxide film is precisely controlled by controlling the growth cycle number of atomic layer deposition, so that the large-area preparation of the hafnium-based ferroelectric film with controllable size can be realized.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention as claimed.
Drawings
Fig. 1 is a schematic structural diagram of a post-compatible hafnium-based ferroelectric capacitor according to the present invention.
The reference numerals indicate 1, a substrate, 2, a metal layer, 3, a hafnium-based ferroelectric film, 4, a top electrode.
Detailed Description
The present invention will be described in further detail with reference to the following examples, which are not to be construed as limiting the scope of the invention, and the raw materials used in the following examples, unless otherwise specified, are commercially available.
Considering that the hafnium-based ferroelectric film in the prior art needs to apply enough stress to an external electrode in the annealing process to obtain stable ferroelectric characteristics, however, the hafnium-based ferroelectric material needs higher temperature, generally more than 500 ℃ in the annealing process, which causes the problem that the hafnium-based ferroelectric film cannot be compatible with the subsequent process.
As for the composition of the hafnium-based ferroelectric film, the invention provides a hafnium-based ferroelectric film with a chemical formula of HfxMyO 2, wherein x is 0.5-0.75, y is 0.5-1, M is selected from Zr, al or La, and the hafnium-based ferroelectric film has enough internal stress and stable ferroelectric property in the growing process through accurate regulation and control of doping of internal elements.
In the preparation method of the hafnium-based ferroelectric film, the hafnium-based ferroelectric film is obtained by taking the presintered mixed powder as a raw material and adopting an atomic layer deposition method, wherein the temperature of the atomic layer deposition method is 250-370 ℃, which is far lower than that of annealing treatment in the prior art and is more than 500 ℃, so that the problem that the annealing treatment cannot be compatible with the subsequent process is solved.
The technical scheme of the invention is further studied by adopting examples and comparative examples, and specific research methods and results are shown as follows:
Example 1
A preparation method of a hafnium-based ferroelectric film, the chemical formula of the hafnium-based ferroelectric film is Hf 0.5ZrO2, the hafnium-based ferroelectric film is made of H 0.5O2 with the grain diameter of 10nm and Zr doped oxide, the thickness of the hafnium-based ferroelectric film is 10nm, and the preparation method comprises the following steps:
S1, mixing Hf 0.5O2 and ZrO 2 according to the stoichiometric ratio of each element in Hf 0.5ZrO2 to obtain mixed powder.
And S2, ball milling is carried out on the mixed powder, and calcination is carried out at the preset temperature of 500 ℃ for 60 seconds, so as to obtain the presintered mixed powder.
S3, adopting an atomic layer deposition method, and circularly depositing the presintered mixed powder at the temperature of 250 ℃ to prepare the hafnium-based ferroelectric film.
A preparation method of a hafnium-based ferroelectric capacitor compatible in the subsequent step comprises the following steps:
S1, preparing a Si substrate.
S2, depositing a metal layer on the Si substrate by adopting a magnetron sputtering method under the deposition conditions that the radio frequency power is 200W, the deposition rate is 15nm/min, argon is used as a main material, the flow is 30sccm, the deposition is carried out at 500 ℃, the metal of the metal layer is TiN, the thickness of the metal layer is 80nm, and the metal layer is used as a bottom electrode.
And S3, depositing a hafnium-based ferroelectric film on the metal layer by adopting an atomic layer deposition method, wherein the deposition condition is that the deposition temperature is 250 ℃ and the pressure is 26.6Pa under argon, the pulse of mixed powder is 1S, the pulse of oxygen source is 1S, and N 2 is purged for 2S after the deposition is finished.
S4, physically vapor depositing a top electrode on the hafnium-based ferroelectric film by using a Lift-off method, wherein the top electrode is an aluminum doped zinc oxide electrode, the deposition rate is 0.5nm/S, the radio frequency power is 13.56MHz, stripping is performed after deposition, the stripping solvent is N-methylpyrrolidone, and the stripping solvent is soaked in the N-methylpyrrolidone at 80 ℃ for 2min.
The hafnium-based ferroelectric capacitor of the post-compatibility prepared in example 1 was prepared by ALD method to obtain a 10nm thick Hf 0.5ZrO2 film on a Si substrate, using Hf 0.5ZrO2 film as a ferroelectric barrier layer, selecting a double conductive electrode of TiN and aluminum doped zinc oxide electrode, and inserting Si layer therein to construct a Hf 0.5O2 -based ferroelectric tunnel junction. The tunnel junction exhibits a resistance-to-switch ratio of up to 850, an ultrafast write speed of 0.8ns at 5V, a read current of 92A/cm 2, and a retention characteristic of up to 105s at 85 ℃.
Example 2
A preparation method of a hafnium-based ferroelectric film, the chemical formula of the hafnium-based ferroelectric film is Hf 0.5Zr0.5O2, the hafnium-based ferroelectric film is made of Hf 0.5O2 with a grain size of 30nm and Zr doped oxide, the thickness of the hafnium-based ferroelectric film is 10nm, comprising the following steps:
S1, mixing Hf 0.5O2 and ZrO 2 according to the stoichiometric ratio of each element in Hf 0.5Zr0.5O2 to obtain mixed powder.
And S2, ball milling is carried out on the mixed powder, and calcination is carried out at the preset temperature of 550 ℃ for 90 seconds, so as to obtain the presintered mixed powder.
S3, adopting an atomic layer deposition method, and circularly depositing the presintered mixed powder at 300 ℃ to prepare the hafnium-based ferroelectric film.
A preparation method of a hafnium-based ferroelectric capacitor compatible in the subsequent step comprises the following steps:
S1, preparing a Si substrate.
S2, depositing a metal layer on the Si substrate by adopting a magnetron sputtering method under the deposition conditions that the radio frequency power is 200W, the deposition rate is 15nm/min, argon is used as a main material, the flow is 30sccm, the deposition is carried out at 500 ℃, the metal of the metal layer is TiN, the thickness of the metal layer is 100nm, and the metal layer is used as a bottom electrode.
S3, depositing a hafnium-based ferroelectric film on the metal layer by adopting an atomic layer deposition method, wherein the deposition condition is that the deposition temperature is 300 ℃ under argon, the pressure is 26.6Pa, the precursor pulse is 0.3S, the oxygen source pulse is 0.3S, and the N 2 is purged for 2S.
S4, physically vapor depositing a top electrode on the hafnium-based ferroelectric film by using a Lift-off method, wherein the top electrode is an aluminum doped zinc oxide electrode, the deposition rate is 0.8nm/S, the radio frequency power is 13.56MHz, stripping is performed after deposition, the stripping solvent is N-methylpyrrolidone, and the stripping solvent is soaked in the N-methylpyrrolidone at 80 ℃ for 2min.
The hafnium-based ferroelectric capacitor of the post-compatibility prepared in example 2 was prepared by ALD method to obtain a 10nm thick Hf 0.5Zr0.5O2 film on a Si substrate, using Hf 0.5Zr0.5O2 film as a ferroelectric barrier layer, selecting a double conductive electrode of TiN and aluminum doped zinc oxide electrode, and inserting Si layer therein to construct a Hf 0.5O2 -based ferroelectric tunnel junction. The tunnel junction exhibits a resistance-to-switch ratio of up to 850, an ultrafast write speed of 0.5ns at 5V, a read current of 88A/cm 2, and a retention characteristic of up to 110s at 85 ℃.
Example 3
A preparation method of a hafnium-based ferroelectric film, the chemical formula of the hafnium-based ferroelectric film is Hf 0.5LaO2, the hafnium-based ferroelectric film is made of doped oxides of Hf 0.5O2 and La with the grain size of 5nm, and the thickness of the hafnium-based ferroelectric film is 10nm, comprising the following steps:
S1, mixing Hf 0.5O2 and La-Mg-O according to the stoichiometric ratio of each element in Hf 0.5LaO2 to obtain mixed powder.
And S2, ball milling is carried out on the mixed powder, and calcination is carried out under the conditions of preset temperature 600 ℃ and presintering time 180S, so as to obtain presintered mixed powder.
S3, adopting an atomic layer deposition method, and circularly depositing the presintered mixed powder at 370 ℃ to prepare the hafnium-based ferroelectric film.
A preparation method of a hafnium-based ferroelectric capacitor compatible in the subsequent step comprises the following steps:
S1, preparing a Si substrate.
S2, depositing a metal layer on the Si substrate by adopting a magnetron sputtering method, wherein the deposition condition is that the radio frequency power is 200W, the deposition speed is 15nm/min, the deposition is performed under the conditions that argon is used as a main material, the flow is 30sccm and the temperature is 500 ℃, the metal of the metal layer is TiN, the thickness of the metal layer is 80nm, and the metal layer is used as a bottom electrode.
S3, depositing a hafnium-based ferroelectric film on the metal layer by adopting an atomic layer deposition method under the deposition conditions of 370 ℃ of deposition temperature, 26.6Pa of pressure, 1.5S of precursor pulse, 2S of oxygen source pulse and 3S of N 2 purge.
S4, physically vapor depositing a top electrode on the hafnium-based ferroelectric film by a hard mask method, wherein the top electrode is an aluminum doped zinc oxide electrode, the deposition rate is 1.0nm/S, the radio frequency power is 13.56MHz, stripping is performed after deposition, the stripping solvent is N-methylpyrrolidone, and the stripping solvent is soaked in the N-methylpyrrolidone at 80 ℃ for 2min.
The hafnium-based ferroelectric capacitor of the post-compatibility prepared in example 3 was prepared by ALD method to obtain a 10nm thick Hf 0.5LaO2 film on a Si substrate, using Hf 0.5LaO2 film as a ferroelectric barrier layer, selecting a double conductive electrode of TiN and aluminum doped zinc oxide electrode, and inserting Si layer therein to construct a Hf 0.5O2 -based ferroelectric tunnel junction. The tunnel junction exhibits a resistance-to-switch ratio of up to 850, an ultrafast write speed of 0.7ns at 5V, a read current of 85A/cm 2, and a retention characteristic of up to 101s at 85 ℃.
Example 4
A preparation method of a hafnium-based ferroelectric film, the chemical formula of the hafnium-based ferroelectric film is Hf 0.75AlO2, the hafnium-based ferroelectric film is made of Hf 0.75O2 with the grain size of 2nm and doped oxide of Al, the thickness of the hafnium-based ferroelectric film is 10nm, comprising the following steps:
S1, mixing Hf 0.75O2 and Al 2O3 according to the stoichiometric ratio of each element in Hf 0.75AlO2 to obtain mixed powder.
And S2, ball milling is carried out on the mixed powder, and calcination is carried out under the conditions of preset temperature 500 ℃ and presintering time 180S, so as to obtain presintered mixed powder.
S3, adopting an atomic layer deposition method, and circularly depositing the presintered mixed powder at 280 ℃ to prepare the hafnium-based ferroelectric film.
A preparation method of a hafnium-based ferroelectric capacitor compatible in the subsequent step comprises the following steps:
S1, preparing a Si substrate.
S2, depositing a metal layer on the Si substrate by adopting a magnetron sputtering method, wherein the deposition condition is that the radio frequency power is 200W, the deposition speed is 15nm/min, the deposition is performed under the conditions that argon is used as a main material, the flow is 30sccm and the temperature is 500 ℃, the metal of the metal layer is TiN, the thickness of the metal layer is 100nm, and the metal layer is used as a bottom electrode.
S3, depositing a hafnium-based ferroelectric film on the metal layer by adopting an atomic layer deposition method under the deposition conditions of 280 ℃ of deposition temperature, 26.6Pa of pressure, 0.8S of precursor pulse, 1.5S of oxygen source pulse and 3S of N 2 purge.
S4, physically vapor depositing a top electrode on the hafnium-based ferroelectric film by a hard mask method, wherein the top electrode is an aluminum doped zinc oxide electrode, the deposition rate is 0.5nm/S, the radio frequency power is 13.56MHz, stripping is performed after deposition, the stripping solvent is N-methylpyrrolidone, and the stripping solvent is soaked in the N-methylpyrrolidone at 80 ℃ for 2min.
The hafnium-based ferroelectric capacitor of the post-compatibility prepared in example 4 was prepared by ALD method to obtain a 10nm thick Hf 0.75AlO2 film on a Si substrate, using Hf 0.75AlO2 film as a ferroelectric barrier layer, selecting a double conductive electrode of TiN and aluminum doped zinc oxide electrode, and inserting Si layer therein to construct a Hf 0.75O2 -based ferroelectric tunnel junction. The tunnel junction exhibits a resistance-to-switch ratio of up to 800, an ultrafast write speed of 0.3ns at 5V, a read current of 80A/cm 2, and a retention characteristic of up to 98s at 85 ℃.
Example 5
A preparation method of a hafnium-based ferroelectric film, the chemical formula of the hafnium-based ferroelectric film is HfAlO 2, the hafnium-based ferroelectric film is made of HfO 2 with the grain size of 8nm and doped oxide of Al, the thickness of the hafnium-based ferroelectric film is 8nm, and the preparation method comprises the following steps:
S1, mixing HfO 2 and Al 2O3 according to the stoichiometric ratio of each element in HfAlO 2 to obtain mixed powder.
And S2, ball milling is carried out on the mixed powder, and calcination is carried out at the preset temperature of 600 ℃ for 60 seconds, so as to obtain the presintered mixed powder.
S3, adopting an atomic layer deposition method, and circularly depositing the presintered mixed powder at 320 ℃ to prepare the hafnium-based ferroelectric film.
A preparation method of a hafnium-based ferroelectric capacitor compatible in the subsequent step comprises the following steps:
S1, preparing a Si substrate.
S2, depositing a metal layer on the Si substrate by adopting a magnetron sputtering method, wherein the deposition condition is that the radio frequency power is 200W, the deposition speed is 15nm/min, the deposition is performed under the conditions that argon is used as a main material, the flow is 30sccm and the temperature is 500 ℃, the metal of the metal layer is TiN, the thickness of the metal layer is 120nm, and the metal layer is used as a bottom electrode.
S3, depositing a hafnium-based ferroelectric film on the metal layer by adopting an atomic layer deposition method under the deposition conditions of 320 ℃ of deposition temperature, 26.6Pa of pressure, 0.5S of precursor pulse, 0.8S of oxygen source pulse and 3S of N 2 purge.
S4, physically vapor depositing a top electrode on the hafnium-based ferroelectric film by a hard mask method, wherein the top electrode is an aluminum doped zinc oxide electrode, the deposition rate is 0.5nm/S, the radio frequency power is 13.56MHz, stripping is performed after deposition, the stripping solvent is N-methylpyrrolidone, and the stripping solvent is soaked in the N-methylpyrrolidone at 80 ℃ for 2min.
The hafnium-based ferroelectric capacitor with the subsequent compatibility prepared in example 5 was prepared by ALD method to obtain a HfAlO 2 thin film with a thickness of 8nm on a Si substrate, using the HfAlO 2 thin film as a ferroelectric barrier layer, selecting TiN and aluminum doped zinc oxide electrode double conductive electrodes, and inserting a Si layer therein to construct a HfO 2 -based ferroelectric tunnel junction. The tunnel junction exhibits a resistance-to-switch ratio of up to 820, an ultrafast write speed of 0.5ns at 5V, a read current of 82A/cm 2, and a retention characteristic of up to 101s at 85 ℃.
Comparative example 1
A method for producing a hafnium-based ferroelectric capacitor was the same as the production procedure of example 1, except that the hafnium-based ferroelectric film of formula Hf 0.5ZrO2 was replaced with hafnium oxide HfO 2.
Comparative example 2
A method for manufacturing a hafnium-based ferroelectric capacitor was the same as the manufacturing process of example 1, except that both the bottom electrode and the top electrode were replaced with zinc oxide without doping.
Compared with comparative examples 1 and 2, example 1 has excellent CMOS process compatibility, maintains stable ferroelectricity at nano-scale, can be reduced in thickness to 3nm or less, has ultra-fast inversion speed and low operating voltage, and also has low temperature environmental suitability, on the basis of which each of the properties of the hafnium-based ferroelectric capacitors manufactured in comparative examples 1 and 2 is inferior to that of the hafnium-based ferroelectric capacitor manufactured in example 1 and the hafnium-based ferroelectric capacitors manufactured in comparative examples 1 and 2 have much lower polarization intensity than that of the hafnium-based ferroelectric capacitor manufactured in example 1 and in the latter.
The foregoing is merely illustrative of the embodiments of the present invention, and the scope of the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the technical scope of the present invention should be included in the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims (10)
1. A hafnium-based ferroelectric film is characterized in that the chemical formula of the hafnium-based ferroelectric film is HfxMyO 2, wherein x is 0.5-0.75, y is 0.5-1, and M is selected from Zr, al or La.
2. The hafnium-based ferroelectric film according to claim 1, wherein the thickness of the hafnium-based ferroelectric film is 8nm to 10nm.
3. A method for producing a hafnium-based ferroelectric thin film as claimed in any one of claims 1 to 2, comprising the steps of:
mixing oxides of HfO 2 and M according to the stoichiometric ratio of each element in HfxMyO 2 to obtain mixed powder;
Ball milling is carried out on the mixed powder, and calcination is carried out under the conditions of preset temperature of 500-600 ℃ and presintering time of 60-180 s, so as to obtain presintered mixed powder;
and (3) adopting an atomic layer deposition method, and circularly depositing the presintered mixed powder at the temperature of 250-370 ℃ to prepare the hafnium-based ferroelectric film.
4. A later compatible hafnium-based ferroelectric capacitor fabricated using the hafnium-based ferroelectric film according to claim 1.
5. The back-end compatible hafnium-based ferroelectric capacitor as claimed in claim 4, wherein the back-end compatible hafnium-based ferroelectric capacitor is composed of a top electrode, a hafnium-based ferroelectric thin film, a metal layer and a substrate stacked in this order from top to bottom;
The hafnium-based ferroelectric capacitor compatible later is prepared according to the following steps:
Preparing a substrate;
Depositing a metal layer on a substrate by adopting a magnetron sputtering method, and taking the metal layer as a bottom electrode;
depositing a hafnium-based ferroelectric film on the metal layer by adopting an atomic layer deposition method;
and (3) performing physical vapor deposition on the hafnium-based ferroelectric film by using a Lift-off method or a hard mask method.
6. The post-compatible hafnium-based ferroelectric capacitor of claim 5, wherein the metal of the metal layer is selected from TiN, taN, or W.
7. The post-compatible hafnium-based ferroelectric capacitor of claim 6, wherein the metal layer has a thickness of 80 nm-120 nm.
8. The post-compatible hafnium-based ferroelectric capacitor of claim 5, wherein the top electrode is selected from aluminum doped zinc oxide electrodes.
9. The post-compatible hafnium-based ferroelectric capacitor of claim 5, wherein the substrate is a semiconductor substrate.
10. The post-compatible hafnium-based ferroelectric capacitor of claim 9, wherein the semiconductor substrate is Si, ge, siC or a thin film semiconductor.
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