CN120565532B - Silicon carbide power module with low noise and double-sided heat dissipation - Google Patents

Abstract

The invention discloses a novel ultralow-noise and double-sided heat dissipation silicon carbide power module which comprises a power module assembly, a plastic package body and a double-sided heat dissipation assembly. The power module assembly is formed by connecting a lower bridge assembly and an upper bridge assembly which are symmetrically arranged in opposite directions through molybdenum blocks. Stray inductances in the upper bridge arm and the lower bridge arm cancel each other out during operation, and the stray inductance of the whole module is reduced. The power module assembly is divided into an upper layer heat dissipation water channel and a lower layer heat dissipation water channel through the two double-sided heat dissipation assemblies, so that the contact area of cooling liquid and the module is doubled, the heat dissipation capacity of the module is improved, the maximum junction temperature of the silicon carbide module is effectively reduced, and the working efficiency of the silicon carbide module is improved. Through with the heat dissipation post setting of small tracts of land, distribution are denser in the bottom of high thermal chip, and the low heat district sets up the heat dissipation post that the area is big but quantity is few, rationally arranges the heat dissipation post according to the setting of chip, avoids local coolant liquid excessively to intensify and influences whole heat exchange efficiency to guarantee whole radiating effect.

Description

Silicon carbide power module with low noise and double-sided heat dissipation

Technical Field

The invention relates to the technical field of power modules, in particular to a three-dimensional chip stacking high-power density module.

Background

The power module is a key component integrated with the power electronic technology, mainly comprises a control circuit and a power driving circuit, and is commonly used in the fields of motor control, lighting control, battery management systems and the like. The new energy automobile industry is rapidly developed nowadays, wherein the requirements on the automotive power semiconductor device are also more stringent, so that the automotive power semiconductor device is rapidly developed towards high power and densification, and the silicon carbide (SiC) power semiconductor device has great potential in the application fields of high temperature, high frequency and high power density by virtue of excellent characteristics of high breakdown field strength, high thermal conductivity, high electron saturation drift rate and the like. However, the traditional 8-silicon carbide module packaging technology generally adopts an HPD packaging mode, a single-sided heat dissipation design is adopted, and the heat dissipation structure of the existing module needs to smear heat conduction silicone grease on a DBC board or weld the DBC on a heat dissipation substrate to realize heat conduction, but the heat resistance of the module is increased, the heat dissipation capacity of the module is reduced, the outflow capacity of a part of the module is lost, the heat dissipation path is long, the heat resistance is large, the high heat density generated by a SiC chip is difficult to effectively lead out, the junction temperature of the module is too high, and the performance of the module is restricted. A radiator for a power module, a power electronic device and a vehicle as disclosed in application number CN 202311675084.4.

Meanwhile, due to the characteristics of the silicon carbide chips, the chips are extremely sensitive to loop noise after being connected in parallel, and under the working condition of a high-frequency switch, larger stray inductance can be generated in the power loop layout in the module, such as positive and negative connecting pieces and interconnection modes, so that a switching voltage spike is caused, and the switching loss is increased, so that the main bottleneck for exerting the advantages of the SiC high-speed switch is formed.

The power module in the prior art still has the defects in systematically optimizing the heat dissipation structure and the power noise. Therefore, there is a need for an integrated double sided heat sink assembly and optimized power module assembly layout to meet both ultra low noise and double sided efficient heat dissipation requirements.

Disclosure of Invention

In view of the above, the present invention provides a silicon carbide power module with low noise and double-sided heat dissipation to solve the above technical problems.

The utility model provides a low miscellaneous and double-sided radiating carborundum power module, includes a plurality of power module assemblies, a plurality of setting is in plastic envelope body on the power module assembly, and two sets up the double-sided radiating assembly on the power module assembly. The power module assembly comprises a lower bridge assembly, an upper bridge assembly, a plurality of molybdenum blocks connected with the lower bridge assembly and the upper bridge assembly, a plurality of signal terminals arranged on the lower bridge assembly and the upper bridge assembly, an AC copper bar arranged on the lower bridge assembly, an anode copper bar arranged on the upper bridge assembly, a cathode copper bar arranged on the lower bridge assembly and an insulating gasket arranged between the anode copper bar and the cathode copper bar. The lower bridge assembly comprises a first DBC plate, a plurality of lower bridge chips arranged on the first DBC plate, at least two copper clips arranged on the lower bridge chips, a plurality of first heat dissipation columns arranged on the first DBC plate in an array mode, and a plurality of second heat dissipation columns arranged on the first DBC plate. The upper bridge assembly comprises a second DBC board, a plurality of upper bridge chips arranged on the second DBC board, a plurality of third heat dissipation columns arranged on the first DBC board in an array mode and a plurality of fourth heat dissipation columns arranged on the second DBC board. The second DBC plate and the first DBC plate are arranged at intervals in a lamination mode, the upper end and the lower end of the molybdenum block are welded on the first DBC plate and the upper bridge chip respectively, the anode copper bar and the cathode copper bar are parallel to each other and are arranged at intervals, the insulating gasket is located between the anode copper bar and the cathode copper bar, and the two double-sided radiating assemblies are arranged on the lower bridge assembly and the upper bridge assembly respectively. The double-sided radiating assembly comprises a base and a water channel arranged on the end face of the base facing the power module assembly, the base is in sealing joint with the lower bridge assembly or the upper bridge assembly and covers the water channel, and radiating columns of the lower bridge assembly and the upper bridge assembly are respectively inserted into the water channels of the two double-sided radiating assemblies.

Further, the first DBC board includes a first ceramic insulating layer, a first lower copper layer disposed on the first ceramic insulating layer, a first upper copper layer disposed on the first ceramic insulating layer, the first ceramic insulating layer disposed between the first upper copper layer and the first lower copper layer, the first upper copper layer disposed on an end surface of the first ceramic insulating layer facing the upper bridge assembly and used for disposing the lower bridge chip and the signal terminals, and the first lower copper layer disposed on an end surface of the first ceramic insulating layer facing away from the upper bridge assembly and used for disposing the first heat dissipation post and the second heat dissipation post.

Further, the first heat dissipation column, the second heat dissipation column, the third heat dissipation column and the fourth heat dissipation column are diamond-shaped, the first heat dissipation column and the second heat dissipation column are integrally formed with the first lower copper layer, the first heat dissipation column and the second heat dissipation column are formed by punching the first lower copper layer, the third heat dissipation column and the fourth heat dissipation column are integrally formed with the second lower copper layer, and the third heat dissipation column and the fourth heat dissipation column are formed by punching the second lower copper layer.

Further, the area of the second heat dissipation column is larger than that of the first heat dissipation column, the first heat dissipation column is arranged corresponding to the lower bridge chip, and the second heat dissipation column is arranged corresponding to the molybdenum block.

Further, the second DBC board includes a second ceramic insulating layer, a second lower copper layer disposed on the second ceramic insulating layer, and a second upper copper layer disposed on the second ceramic insulating layer, the second upper copper layer being disposed on an end surface of the second ceramic insulating layer facing the lower bridge assembly and being used for disposing the upper bridge chip and the signal terminals, the second lower copper layer being disposed on an end surface of the second ceramic insulating layer facing away from the lower bridge assembly and being used for disposing the third heat dissipation post and the fourth heat dissipation post.

Further, the area of the fourth heat dissipation column is larger than that of the third heat dissipation column, the third heat dissipation column is arranged corresponding to the upper bridge chip, and the fourth heat dissipation column is arranged corresponding to the empty area of the second DBC board.

Further, through holes are respectively formed in the signal terminal, the AC copper bar, the positive copper bar and the negative copper bar, and the through holes are used for enabling plastic packaging liquid to flow into the through holes during epoxy plastic packaging.

Further, the double-sided heat dissipation assembly further comprises an inlet arranged at one end of the base and an outlet arranged at the other end of the base, one end of the inlet penetrates through the side wall of the base, the other end of the inlet is communicated with the water channel, one end of the outlet penetrates through the side wall of the base, the other end of the outlet is communicated with the water channel, the inlet and the outlet are respectively used as a liquid inlet and a liquid outlet of cooling liquid and are positioned at two sides of the base, and the arrangement directions of the inlet and the outlet are parallel to the arrangement directions of the power module assemblies.

Compared with the prior art, the low-noise and double-sided heat dissipation silicon carbide power module provided by the invention has the advantages that the lower bridge assembly and the upper bridge assembly are symmetrically arranged in opposite directions, so that the upper bridge arm and the lower bridge arm are symmetrically arranged, stray inductances in the upper bridge arm and the lower bridge arm are mutually offset when the module works, the overall stray inductance of the module is reduced, and the working efficiency of the silicon carbide module is improved. The positive electrode copper bar and the negative electrode copper bar are positioned on the same side and adopt a laminated design, the current directions of the positive electrode copper bar and the negative electrode copper bar are opposite, magnetic fluxes generated during symmetrical arrangement are mutually offset, stray inductance of a direct current loop is obviously reduced, extremely small stray inductance within 1.5nH of the silicon carbide module is finally realized, the robust performance of the silicon carbide power module is effectively improved, and the higher working efficiency of the silicon carbide power module is released. Meanwhile, the two sides of the power module assembly can radiate heat and are divided into an upper layer radiating water channel and a lower layer radiating water channel through the two double-sided radiating assemblies, so that the contact area of cooling liquid and the module is doubled, the radiating capacity of the module is improved, the maximum junction temperature of the silicon carbide module is effectively reduced, and the working efficiency of the silicon carbide module is improved. The heat dissipation column directly forms the copper layer through pressing, so that heat conduction is not needed by heat conduction silicone grease or a heat dissipation substrate, the whole lower copper layer is directly used as the heat dissipation substrate to be in contact with cooling liquid for heat exchange, the heat dissipation path is short, and the heat dissipation efficiency is improved. Through setting up the heat dissipation post that is small-area, distribution are denser in the bottom of high thermal chip to possess bigger effective area of contact, concentrate high-efficient heat transfer, and low heat district is through the big but few heat dissipation post of quantity of area, reduce the area of contact with the coolant liquid, avoid local coolant liquid excessively to intensify and influence whole heat exchange efficiency, thereby guarantee whole radiating effect.

Drawings

Fig. 1 is a schematic structural diagram of a silicon carbide power module with low noise and double-sided heat dissipation according to the present invention.

Fig. 2 is an exploded view of the low-noise and double-sided heat dissipating silicon carbide power module of fig. 1.

Fig. 3 is a schematic diagram of a power module assembly of the low noise and double-sided heat dissipation silicon carbide power module of fig. 1, with the upper bridge assembly, the positive copper bar, and the insulating spacer removed.

Fig. 4 is a schematic view of another angle of the power module assembly of the low noise and double-sided heat dissipation silicon carbide power module of fig. 1, with the upper bridge assembly, the positive copper bar, and the insulating spacer removed.

Fig. 5 is a schematic diagram of a power module assembly of the low noise and double-sided heat dissipation silicon carbide power module of fig. 1, with the lower bridge assembly and the negative copper bar removed.

Fig. 6 is a schematic view of another angle of the power module assembly of the low noise and double-sided heat dissipation silicon carbide power module of fig. 1, with the lower bridge assembly and the negative copper bar removed.

Fig. 7 is a cross-sectional view of a power module assembly of the low-noise and double-sided heat dissipating silicon carbide power module of fig. 1.

Fig. 8 is a schematic structural diagram of a double-sided heat dissipation assembly of the low-noise and double-sided heat dissipation silicon carbide power module of fig. 1.

Reference numerals are a power module assembly 10, a plastic package 20, a double-sided heat dissipation assembly 30, a lower bridge assembly 11, an upper bridge assembly 12, a molybdenum block 13, a signal terminal 14, an AC copper bar 15, a positive copper bar 16, a negative copper bar 17, an insulating spacer 18, a first DBC board 111, a lower bridge chip 112, a copper Clip113, a first heat dissipation post 114, a second heat dissipation post 115, a first ceramic insulation layer 116, a first lower copper layer 117, a first upper copper layer 118, a second DBC board 121, an upper bridge chip 122, a third heat dissipation post 123, a fourth heat dissipation post 124, a second ceramic insulation layer 125, a second lower copper layer 126, a second upper copper layer 127, a base 31, a water channel 32, an inlet, and an outlet 34.

Detailed Description

Specific embodiments of the present invention are described in further detail below. It should be understood that the description herein of the embodiments of the invention is not intended to limit the scope of the invention.

Fig. 1 to 8 are schematic structural diagrams of a low-noise and double-sided heat dissipation silicon carbide power module according to the present invention. The silicon carbide power module with low noise and double-sided heat dissipation comprises a plurality of power module assemblies 10, a plurality of plastic packages 20 arranged on the power module assemblies 10, and two double-sided heat dissipation assemblies 30 arranged on the power module assemblies 10. It is conceivable that the low noise and double sided heat dissipation silicon carbide power module further includes other functional modules, such as connection components, mounting components, etc., which are known to those skilled in the art and will not be described herein.

The power module assembly 10 includes a lower bridge assembly 11, an upper bridge assembly 12, a plurality of molybdenum blocks 13 connecting the lower bridge assembly 11 and the upper bridge assembly 12, a plurality of signal terminals 14 disposed on the lower bridge assembly 11 and the upper bridge assembly 12, an AC copper bar 15 disposed on the lower bridge assembly 11, an anode copper bar 16 disposed on the upper bridge assembly 12, a cathode copper bar 17 disposed on the lower bridge assembly 11, and an insulating spacer 18 disposed between the anode copper bar 16 and the cathode copper bar 17.

The lower bridge assembly 11 includes a first DBC board 111, a plurality of lower bridge chips 112 disposed on the first DBC board 111, at least two copper clips 113 disposed on the lower bridge chips 112, a plurality of first heat dissipation pillars 114 disposed in an array on the first DBC board 111, and a plurality of second heat dissipation pillars 115 disposed on the first DBC board 111.

The first DBC board 111 is a direct copper-clad ceramic substrate (DBC), which is formed by eutectic sintering of a ceramic substrate and copper foil at high temperature, and is mainly used in a power electronic module, and has excellent heat conduction and insulation properties. The first DBC board 111 should be a prior art and will not be described herein. The first DBC board 111 includes a first ceramic insulating layer 116, a first lower copper layer 117 disposed on the first ceramic insulating layer 116, and a first upper copper layer 118 disposed on the first ceramic insulating layer 116. The first ceramic insulating layer 116 is located between the first upper copper layer 118 and the first lower copper layer 117. The first upper copper layer 118 is located on the end face of the first ceramic insulating layer 116 facing the upper bridge assembly 12 and is used for disposing the lower bridge chip 112 and the signal terminals 14, and the first lower copper layer 117 is located on the end face of the first ceramic insulating layer 116 facing away from the upper bridge assembly 12 and is used for disposing the first heat dissipation pillars 114 and the second heat dissipation pillars 115.

Eight lower bridge chips 112 are arranged in parallel, each four lower bridge chips 112 are arranged on two sides of the first DBC board 111 in a linear arrangement, and a silver paste sintering process is adopted between the lower bridge chips 112 and the first upper copper layer 118 of the first DBC board 111 to improve the heat transfer of the chips. The lower bridge chip 112 itself should be of the prior art, and the structure and the working principle thereof are not described herein.

The copper Clip113 connects the lower bridge chip 112 and the first upper copper layer 118 of the first DBC board 111, and uses copper strips or copper sheets to connect the chip and the terminals by soldering, so as to increase the cross-sectional area through which the current flows and reduce the stray inductance of the module.

The first heat dissipation column 114 and the second heat dissipation column 115 are diamond-shaped, the first heat dissipation column 114 and the second heat dissipation column 115 are integrally formed with the first lower copper layer 117, and the first lower copper layer 117 is directly formed by stamping, so that heat conduction is not required to be conducted through heat conduction silicone grease or a heat dissipation substrate, the whole first lower copper layer 117 is directly used as the heat dissipation substrate to be in contact with cooling liquid for heat exchange, the number of times of heat transfer is further reduced, and the heat dissipation path is short, and the heat dissipation efficiency is improved. Since the lower bridge chip 112 is arranged on two sides of the first DBC board 111 in a straight line, and the middle position of the first DBC board 111 is used for setting the molybdenum block 13 with smaller heat productivity, the cooling liquid is located on the heat dissipation column at the bottom of the lower bridge chip 112 in order to ensure concentrated heat exchange. The area of the second heat dissipation columns 115 is larger than that of the first heat dissipation columns 114, the first heat dissipation columns 114 are arranged corresponding to the lower bridge chip 112, and the second heat dissipation columns 115 are arranged corresponding to the molybdenum blocks 13, so that the number of the heat dissipation columns is increased for the area with large heat generation, the heat dissipation area is increased, the cooling liquid is ensured to have large-area contact in the area with high heat generation, and the heat exchange effect is ensured. And the area with small heating value passes through two large-volume heat dissipation columns, so that the contact area with the cooling liquid is reduced, the temperature rise caused by excessive heat exchange of the cooling liquid is avoided, and the subsequent heat exchange effect is prevented from being influenced.

The upper bridge assembly 12 includes a second DBC board 121, a plurality of upper bridge chips 122 disposed on the second DBC board 121, a plurality of third heat dissipation pillars 123 disposed on the first DBC board 111 in an array, and a plurality of fourth heat dissipation pillars 124 disposed on the second DBC board 121.

The second DBC board 121 has the same composition as the first DBC board 111, and the second DBC board 121 includes a second ceramic insulating layer 125, a second lower copper layer 126 disposed on the second ceramic insulating layer 125, and a second upper copper layer 127 disposed on the second ceramic insulating layer 125. The second upper copper layer 127 is located on the end face of the second ceramic insulating layer 125 facing the lower bridge assembly 11 and is used for disposing the upper bridge chip 122 and the signal terminals 14, and the second lower copper layer 126 is located on the end face of the second ceramic insulating layer 125 facing away from the lower bridge assembly 11 and is used for disposing the third heat dissipation post 123 and the fourth heat dissipation post 124. The lower bridge component 11 and the upper bridge component 12 are arranged at intervals and are horizontally arranged, so that upper bridge arms and lower bridge arms are symmetrically arranged, stray inductances in the upper bridge arms and stray inductances in the lower bridge arms are mutually offset when the module works, the overall stray inductances of the module are reduced, the working efficiency of the silicon carbide module is improved, meanwhile, the two sides of the power module component 10 can radiate heat and are divided into an upper layer radiating water channel and a lower layer radiating water channel through the two double-sided radiating components 30, the contact area of cooling liquid and the module is doubled, the radiating capacity of the module is improved, the maximum junction temperature of the silicon carbide module is effectively reduced, and the working efficiency of the silicon carbide module is improved.

Eight upper bridge chips 122 are arranged in parallel, each four upper bridge chips 122 are arranged on the second upper copper layer 127 in a linear arrangement and are provided with two rows, the upper bridge chips 122 are positioned in the middle of the second upper copper layer 127,

The third heat dissipation pillar 123 and the fourth heat dissipation pillar 124 are directly formed by punching the second lower copper layer 126, thereby directly using the entire second lower copper layer 126 as a heat dissipation substrate. The area of the fourth heat dissipation pillar 124 is larger than the area of the third heat dissipation pillar 123. The third heat dissipation column 123 is disposed corresponding to the upper bridge chip 122, and the fourth heat dissipation column 124 is disposed corresponding to the empty area of the second DBC board 121, so as to ensure that the cooling liquid can be centrally replaced by the heat dissipation column at the bottom of the upper bridge chip 122, and the effect of the cooling liquid is the same as that of the first heat dissipation column 114 and the second heat dissipation column 115, so as to ensure that the cooling liquid has large-area contact in a high heat generation area, and the heat dissipation path is short, thereby improving the heat dissipation efficiency.

The upper and lower ends of the molybdenum block 13 are welded to the first upper copper layer 118 and the upper bridge chip 122, respectively, and the molybdenum block 13 is used for connecting the lower bridge assembly 11 and the upper bridge assembly 12.

The plurality of signal terminals 14 are respectively connected with the first upper copper layer 118 and the second upper copper layer 127, and the signal terminals 14 play a role ‌ of transmitting signals and control instructions of the lower bridge component 11 and the upper bridge component 12 and are responsible for transmitting control signals from an external control system to the power module, so as to control the working state and output power of the module. The signal pin 27 should be of the prior art and will not be described in detail herein.

The AC copper bars 15 are used for outputting alternating current after module conversion. One end of the AC copper bar 15 is connected to the first upper copper layer 118, and the other end of the AC copper bar penetrates out of the plastic package body 20 to be connected to an external load. The positive copper bar 16 and the negative copper bar 17 are located at the same side, one end of the positive copper bar 16 is connected with the second upper copper layer 127, and the other end of the positive copper bar passes through the plastic package body 20. One end of the negative copper bar 17 is connected with the first upper copper layer 118, and the other end of the negative copper bar penetrates out of the plastic package body 20. The positive electrode copper bar 16 and the negative electrode copper bar 17 are respectively used for connecting the negative electrode and the positive electrode of an external direct current power supply to form a direct current loop together to supply power to the module. The positive copper bar 16 and the negative copper bar 17 are parallel to each other and are arranged at intervals, so that the positive copper bar 16 and the negative copper bar 17 adopt a laminated design, and when the current directions of the positive copper bar 16 and the negative copper bar are opposite, the magnetic fluxes generated by the currents which are opposite up and down are counteracted when the current directions of the positive copper bar and the negative copper bar are opposite, the loop noise is reduced, and the stray inductance is reduced. Meanwhile, the second DBC board 121 and the first DBC board 111 are also arranged at intervals in a lamination mode, so that stray inductances in an upper bridge arm and stray inductances in a lower bridge arm are mutually counteracted when the module works, the overall stray inductances of the module are reduced, and the working efficiency of the module is improved. Meanwhile, the second DBC board 121 and the first DBC board 111 have the same size, and the positive copper bar 16 and the negative copper bar 17 have the same size, so that they are completely symmetrical to further reduce a loop distance, and the insulating spacer 18 is located between the positive copper bar 16 and the negative copper bar 17 and is used to separate the positive copper bar 16 and the negative copper bar 17. The signal terminal 14, the AC copper bar 15, the positive copper bar 16, and the negative copper bar 17 are respectively provided with a through hole 19. The through holes 19 are used for enabling plastic packaging liquid to flow into the through holes 19 during epoxy plastic packaging, so that the bonding capacity of the plastic packaging body 20 is increased after solidification, internal layering of the plastic packaging shell is reduced, and heat transfer inside the module is improved.

The plastic package 20 is formed by curing the power module assembly 10 coated with a sealing material such as epoxy resin, so as to seal gaps between different power terminals to fix relative positions, thereby realizing electrical isolation.

The first lower copper layer 117 and the second lower copper layer 126 expose the plastic package 20, so that the heat dissipation posts can extend into the double-sided heat dissipation assembly 30. One ends of the signal terminal 14, the AC copper bar 15, the positive copper bar 16, and the negative copper bar 17 extend out of the plastic package 20 so as to be connected with an external electric device.

Two double-sided heat dissipating modules 30 are respectively provided on the lower bridge module 11 and the upper bridge module 12. The double-sided heat sink assembly 30 includes a base 31, a water channel 32 formed on an end surface of the base 31 facing the power module assembly 10, an inlet 33 formed at one end of the base 31, and an outlet 34 formed at the other end of the base 31.

The base 31 is sealed and attached to the first lower copper layer 117 or the second lower copper layer 126, and covers the water channel 32 to form a channel through which the cooling liquid flows. The heat dissipation posts of the lower bridge assembly 11 and the upper bridge assembly 12 are respectively inserted into the water channels 32 of the two double-sided heat dissipation assemblies 30. The inlet 33 has one end penetrating through the side wall of the base 31 and the other end communicating with the water channel 32, and the outlet 34 has one end penetrating through the side wall of the base 31 and the other end communicating with the water channel 32. The inlet 33 and the outlet 34 are respectively used as a liquid inlet and a liquid outlet of the cooling liquid and are positioned at two sides of the base 31, the arrangement directions of the inlet 33 and the outlet 34 are parallel to the arrangement directions of the power module assemblies 10, and the cooling liquid enters from the inlet 33 and exchanges heat with a heat dissipation column inserted in the water channel 32 and then flows out from the outlet 34, so that the cooling liquid exchanges heat with the flowing cooling liquid to take away the heat of the chip.

Compared with the prior art, the low-noise and double-sided heat dissipation silicon carbide power module provided by the invention has the advantages that the lower bridge assembly 11 and the upper bridge assembly 12 are symmetrically arranged in opposite directions, so that the upper bridge arm and the lower bridge arm are symmetrically arranged, the stray inductance in the upper bridge arm and the stray inductance in the lower bridge arm are mutually offset when the module works, the overall stray inductance of the module is reduced, and the working efficiency of the silicon carbide module is improved. The positive electrode copper bar 16 and the negative electrode copper bar 17 are positioned on the same side and adopt a laminated design, the current directions of the positive electrode copper bar and the negative electrode copper bar are opposite, magnetic fluxes generated during symmetrical arrangement are mutually offset, stray inductance of a direct current loop is obviously reduced, extremely small stray inductance within 1.5nH of the silicon carbide module is finally realized, the robust performance of the silicon carbide power module is effectively improved, and the higher working efficiency of the silicon carbide power module is released. Meanwhile, the two sides of the power module assembly 10 can radiate heat and are divided into an upper layer radiating water channel and a lower layer radiating water channel through the two double-sided radiating assemblies 30, so that the contact area of cooling liquid and a module is doubled, the radiating capacity of the module is improved, the maximum junction temperature of the silicon carbide module is effectively reduced, and the working efficiency of the silicon carbide module is improved. The heat dissipation column directly forms the copper layer through pressing, so that heat conduction is not needed by heat conduction silicone grease or a heat dissipation substrate, the whole lower copper layer is directly used as the heat dissipation substrate to be in contact with cooling liquid for heat exchange, the heat dissipation path is short, and the heat dissipation efficiency is improved. Through setting up the heat dissipation post that is small-area, distribution are denser in the bottom of high thermal chip to possess bigger effective area of contact, concentrate high-efficient heat transfer, and low heat district is through the big but few heat dissipation post of quantity of area, reduce the area of contact with the coolant liquid, avoid local coolant liquid excessively to intensify and influence whole heat exchange efficiency, thereby guarantee whole radiating effect.

The above is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention, and any modifications, equivalent substitutions or improvements within the spirit of the present invention are intended to be covered by the claims of the present invention.

Claims (8)

1. The utility model provides a low miscellaneous just double-sided radiating carborundum power module which characterized in that: the low-noise and double-sided radiating silicon carbide power module comprises a plurality of power module components, a plurality of plastic package bodies arranged on the power module components, and two double-sided radiating components arranged on the power module components, wherein the power module components comprise a lower bridge component, an upper bridge component, a plurality of molybdenum blocks connected with the lower bridge component and the upper bridge component, a plurality of signal terminals arranged on the lower bridge component and the upper bridge component, an AC copper bar arranged on the lower bridge component, an anode copper bar arranged on the upper bridge component, a cathode copper bar arranged on the lower bridge component, and an insulating gasket arranged between the anode copper bar and the cathode copper bar, the lower bridge component comprises a first DBC plate, a plurality of lower bridge chips arranged on the first DBC plate, the upper bridge component comprises a second DBC plate, a plurality of upper bridge chips arranged on the second DBC plate, a plurality of third heat dissipation columns arranged on the first DBC plate, a plurality of fourth heat dissipation columns arranged on the second DBC plate, wherein the second DBC plate and the first DBC plate are arranged at intervals in a lamination mode, the upper and lower ends of the molybdenum block are welded on the first DBC plate and the upper bridge chips respectively, the positive copper bar and the negative copper bar are arranged in parallel and at intervals, the insulating gasket is positioned between the positive copper bar and the negative copper bar, the two double-sided radiating assemblies are respectively arranged on the lower bridge assembly and the upper bridge assembly, each double-sided radiating assembly comprises a base, a water channel is formed in the direction from the base to the end face of the power module assembly, the base is in sealing joint with the lower bridge assembly or the upper bridge assembly and covers the water channel, and radiating columns of the lower bridge assembly and the upper bridge assembly are respectively inserted into the water channels of the two double-sided radiating assemblies.

2. The low noise and dual sided heat dissipating silicon carbide power module of claim 1 wherein the first DBC board comprises a first ceramic insulator layer, a first lower copper layer disposed on the first ceramic insulator layer, a first upper copper layer disposed on the first ceramic insulator layer, the first ceramic insulator layer disposed between the first upper copper layer and the first lower copper layer, the first upper copper layer disposed on an end of the first ceramic insulator layer facing the upper bridge assembly for positioning the lower bridge chip and the signal terminals, the first lower copper layer disposed on an end of the first ceramic insulator layer facing away from the upper bridge assembly for positioning the first heat dissipating stud and the second heat dissipating stud.

3. The low noise and double sided heat dissipating silicon carbide power module of claim 2 wherein said first heat dissipating stud, said second heat dissipating stud, said third heat dissipating stud, and said fourth heat dissipating stud are diamond shaped, said first heat dissipating stud and said second heat dissipating stud are integrally formed with said first lower copper layer, and said first heat dissipating stud and said second heat dissipating stud are formed by stamping said first lower copper layer.

4. The low noise and double-sided heat dissipation silicon carbide power module as set forth in claim 1 wherein said second heat dissipation post has an area greater than an area of said first heat dissipation post, said first heat dissipation post being disposed in correspondence with said lower bridge chip, said second heat dissipation post being disposed in correspondence with said molybdenum block.

5. The low noise and double sided heat dissipating silicon carbide power module of claim 1 wherein the second DBC plate includes a second ceramic insulator layer, a second lower copper layer disposed on the second ceramic insulator layer, and a second upper copper layer disposed on the second ceramic insulator layer, the second upper copper layer being disposed on an end of the second ceramic insulator layer facing the lower bridge assembly and configured to dispose the upper bridge chip and the signal terminals, the second lower copper layer being disposed on an end of the second ceramic insulator layer facing away from the lower bridge assembly and configured to dispose the third heat spreader and the fourth heat spreader, the third heat spreader and the fourth heat spreader being integrally formed with the second lower copper layer, the third heat spreader and the fourth heat spreader being formed by stamping the second lower copper layer.

6. The low noise and double sided heat dissipating silicon carbide power module of claim 1 wherein the fourth heat dissipating stud has an area greater than an area of the third heat dissipating stud, the third heat dissipating stud being disposed corresponding to the upper bridge chip and the fourth heat dissipating stud being disposed corresponding to the second DBC board void area.

7. The low noise and double sided heat dissipating silicon carbide power module of claim 1 wherein the signal terminals, the AC copper bar, the positive copper bar, and the negative copper bar are each provided with a through hole for flow of molding liquid into the through holes during epoxy molding.

8. The low noise and double-sided heat dissipation silicon carbide power module as set forth in claim 1, wherein said double-sided heat dissipation assembly further comprises an inlet disposed at one end of said base and an outlet disposed at the other end of said base, said inlet having one end extending through a side wall of said base and the other end communicating with said water channel, said outlet having one end extending through a side wall of said base and the other end communicating with said water channel, said inlet and said outlet being a liquid inlet and a liquid outlet for a cooling liquid, respectively, and disposed on both sides of said base, said inlet and said outlet being disposed in a direction parallel to a direction in which said plurality of power module assemblies are disposed.