CN120201886B - Display panel, method for manufacturing display panel, and electronic device - Google Patents
Display panel, method for manufacturing display panel, and electronic deviceInfo
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- CN120201886B CN120201886B CN202510653056.5A CN202510653056A CN120201886B CN 120201886 B CN120201886 B CN 120201886B CN 202510653056 A CN202510653056 A CN 202510653056A CN 120201886 B CN120201886 B CN 120201886B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- Manufacturing & Machinery (AREA)
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Abstract
The embodiment of the application provides a display panel, a preparation method of the display panel and electronic equipment, and relates to the technical field of display. In the display panel, the thermal expansion coefficient of the packaging unit is designed to be equivalent to that of the first isolation part, so that even if the volume change amount of the packaging unit and the volume change amount of the packaging unit are equivalent to each other, the packaging unit and the packaging unit can expand or contract synchronously, so that the surfaces of the packaging unit and the packaging unit, which are contacted with each other, are always attached together, gaps can not occur, the situation that the first isolation part and the packaging unit are separated to form the gaps when the temperature is changed is avoided, the packaging of the light-emitting device can not fail due to the gaps between the first isolation part and the packaging unit, and the display effect of the display panel is ensured.
Description
Technical Field
The application relates to the technical field of display, in particular to a display panel, a preparation method of the display panel and electronic equipment.
Background
An Organic LIGHT EMITTING Diode (OLED) is considered as a next generation display technology following a liquid crystal display technology, and is widely used in various consumer electronic products such as a smart phone, a television, a notebook computer, a desktop computer, a vehicle-mounted display, and a wearable device due to its excellent color and image quality, and has become a mainstream technology in a display panel.
In the conventional process of manufacturing a display panel, patterning of light emitting pixels is generally achieved through a fine metal mask (FINE METAL MASK, abbreviated as FMM). The FMM technology is mature and the mass production experience is rich. However, the FMM technology has the problems of limited precision, high development cost, long development period and the like. The technology of no fine metal mask eliminates the limitation of the traditional OLED technology on the size, resolution and other screen performances of the display screen, and has the advantages of high performance, full-scale size and agile delivery. Patent CN118251982A、CN116648095A、CN117062489A、CN118742138A、CN118678783A、CN118660598A、CN118675450A、CN118824188A、CN118781966A describes the relevant content of fine metal mask free technology for reference.
However, the process performance of the current OLED display product needs to be further improved.
Disclosure of Invention
In order to overcome the technical problems mentioned in the background, the application provides a display panel, a preparation method of the display panel and electronic equipment.
In a first aspect of the present application, there is provided a display panel including:
a substrate;
The isolation structure is positioned on the substrate and is surrounded on the substrate to form an isolation opening, the isolation structure comprises a first isolation part and a second isolation part which are sequentially stacked, and the orthographic projection of the first isolation part on the substrate is positioned in the orthographic projection of the second isolation part on the substrate;
A light emitting device at least partially within the isolation opening;
And the packaging unit is used for packaging the light-emitting device in the isolation opening, and is attached to the side face, facing the corresponding isolation opening, of the first isolation part, wherein the difference of the thermal expansion coefficients of the first isolation part and the packaging unit is within ten percent of the thermal expansion coefficient of the packaging unit.
In one possible implementation of the present application, the material of the first isolation portion includes at least one metal material;
preferably, the material of the first isolation part includes two metal materials.
In one possible implementation of the present application, the material of the first isolation portion includes a bulk metal material and a doped metal material, wherein a mass ratio of the bulk metal material in the first isolation portion is greater than a mass ratio of the doped metal material in the first isolation portion.
In one possible implementation of the application, the bulk metallic material comprises aluminum, and the doped metallic material comprises one of titanium, pick, molybdenum, or beryllium, or,
The bulk metallic material comprises copper and the doped metallic material comprises tungsten or molybdenum.
In one possible embodiment of the present application, the host metal material includes aluminum, the doped metal material includes titanium, and the mass of the doped metal material is 0.1% -0.5% of the mass of the host metal material.
In one possible embodiment of the present application, the bulk metal material includes aluminum, the doped metal material includes a pick, and the mass of the doped metal material is 0.1% -0.3% of the mass of the bulk metal material.
In one possible embodiment of the present application, the host metal material includes aluminum, the doped metal material includes molybdenum, and the mass of the doped metal material is 0.5% -2% of the mass of the host metal material.
In one possible embodiment of the present application, the bulk metallic material comprises aluminum, the doped metallic material comprises beryllium, and the mass of the doped metallic material is 2% -3% of the mass of the bulk metallic material.
In one possible embodiment of the present application, the bulk metallic material comprises copper, the doped metallic material comprises tungsten, and the mass of the doped metallic material is 10% -25% of the mass of the bulk metallic material.
In one possible embodiment of the present application, the host metal material comprises copper, the doped metal material comprises molybdenum, and the mass of the doped metal material is 20% -30% of the mass of the host metal material.
In one possible embodiment of the present application, the display panel further includes a pixel defining layer located on a side of the isolation structure facing the substrate, the isolation structure being located on a side of the pixel defining layer facing away from the substrate;
The pixel defining layer comprises a pixel opening, the orthographic projection of the pixel opening on the substrate is positioned in the orthographic projection of the corresponding isolation opening on the substrate, and at least part of the light emitting device is positioned in the pixel opening;
preferably, the pixel defining layer is an inorganic pixel defining layer;
preferably, the pixel defining layer is a single layer structure of silicon oxide or silicon nitride, or a stacked structure formed of silicon oxide and silicon nitride alternately;
Preferably, the light-emitting device comprises a first electrode, a light-emitting material layer and a second electrode which are stacked in a direction away from the substrate, wherein the second electrode is electrically connected with the isolation structure;
the first electrode is arranged on one side of the pixel defining layer, which is close to the substrate, and at least part of the first electrode is exposed from the pixel opening;
preferably, the isolation structure further comprises a third isolation part, the first isolation part and the second isolation part are sequentially stacked in a direction away from the substrate, the orthographic projection of the first isolation part on the substrate is located in the orthographic projection of the third isolation part on the substrate, and the orthographic projection of the third isolation part on the substrate is located in the orthographic projection of the second isolation part on the substrate.
In one possible embodiment of the present application, the display panel further includes a first encapsulation layer, the first encapsulation layer being located at a side of the encapsulation unit away from the substrate, the first encapsulation layer at least covering the encapsulation unit;
preferably, the first encapsulation layer comprises a planar surface on a side remote from the substrate;
preferably, the display panel further comprises a second encapsulation layer, and the second encapsulation layer is located on one side of the first encapsulation layer away from the substrate;
Preferably, the packaging unit and the second packaging layer are inorganic packaging layers, and the first packaging layer is an organic packaging layer.
In a second aspect of the present application, there is also provided a method for manufacturing a display panel, the method comprising:
Providing a substrate;
Manufacturing an isolation structure and an isolation opening on the substrate, wherein the isolation structure comprises a first isolation part and a second isolation part which are sequentially stacked, and the orthographic projection of the first isolation part on the substrate is positioned in the orthographic projection of the second isolation part on the substrate;
And manufacturing a light emitting device and a packaging unit for packaging the light emitting device in the isolation opening, wherein the packaging unit is attached to the side surface of the first isolation part, which faces the isolation opening, and the difference of the thermal expansion coefficients of the first isolation part and the packaging unit is within ten percent of the thermal expansion coefficient of the packaging unit.
In one possible embodiment of the present application, the step of fabricating the isolation structure and the isolation opening on the substrate includes:
sequentially manufacturing a first isolation material layer and a second isolation material layer on the substrate, wherein the first isolation material layer is manufactured by adopting at least one metal material;
and patterning the first isolation material layer and the second isolation material layer to obtain the isolation structure and the isolation opening, wherein the second isolation part is formed by the etched second isolation material layer, and the first isolation part is formed by the etched first isolation material layer.
In one possible embodiment of the present application, the step of sequentially forming the first isolation material layer and the second isolation material layer on the substrate includes:
Manufacturing a first isolation material layer formed by mutually doping two different metals on the substrate by adopting a physical vapor deposition mode;
And manufacturing the second isolation material layer on one side of the first isolation material layer far away from the substrate.
In one possible embodiment of the present application, the step of fabricating a first isolation material layer formed by doping two different metals on the substrate by physical vapor deposition includes:
Taking a target of one metal as a main body target, taking a target of the other metal as a doped target, respectively carrying out gasification control on the main body target and the doped target, and controlling the quantity of gaseous metal particles generated by gasification on the main body target to be larger than the quantity of gaseous metal particles generated by gasification on the doped target;
The first spacer material layer is formed by depositing gaseous metal particles of two different metals on one side of the substrate.
In a third aspect of the present application, there is further provided an electronic device, where the electronic device includes a display panel in any one of the possible implementation manners of the first aspect, or a display panel prepared in any one of the possible implementation manners of the second aspect.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 illustrates a schematic diagram of the positional relationship of an isolation structure and an isolation opening provided in this embodiment;
FIG. 2 illustrates one of the schematic cross-sectional views of the portion AA in FIG. 1;
FIG. 3 illustrates a second cross-sectional view of the AA position of FIG. 1;
FIG. 4 illustrates a third schematic cross-sectional view of the AA position of FIG. 1;
fig. 5 illustrates a fourth cross-sectional view of the AA position of fig. 1.
Fig. 6 illustrates a flowchart of a method for manufacturing a display panel according to the present embodiment;
FIG. 7 is a process flow diagram corresponding to FIG. 6;
FIG. 8 illustrates a sub-step flow diagram of step S130 of FIG. 6;
FIG. 9 is a process flow diagram corresponding to FIG. 8;
fig. 10 illustrates a schematic diagram of depositing a first isolation material layer in a vacuum chamber.
Icons 1-display panel, 11-substrate, 12-isolation structure, 1201-isolation opening, 121-first isolation portion, 122-second isolation portion, 123-third isolation portion, 13-light emitting device, 131-first electrode, 132-light emitting material layer, 133-second electrode, 14-pixel defining layer, 1401-pixel opening, 1611-packaging unit, 162-first packaging layer, 163-second packaging layer, 21-first isolation material layer, 22-second isolation material layer, 20-vacuum chamber.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
In the description of the present application, it should be noted that, the azimuth or positional relationship indicated by the terms "upper", "lower", etc. are based on the azimuth or positional relationship shown in the drawings, or the azimuth or positional relationship that is commonly put in use of the product of the application, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element to be referred to must have a specific azimuth, be configured and operated in a specific azimuth, and therefore should not be construed as limiting the present application.
The improvement of the density of the light emitting devices (i.e., pixel density) in the display panel is an important approach for improving the display effect, however, the current display panel manufactured by adopting the fine metal vapor deposition mask (FINE METAL MASK, FMM) technology cannot further improve the density of the light emitting devices due to technical limitations. Long-term researches have found that in order to solve the technical problem that the density of the light-emitting device cannot be further improved, isolation structures are arranged in some display panels, when the light-emitting material layer and the cathode are evaporated in a whole layer, the light-emitting material layer and the cathode can be disconnected at the position of the isolation structures, and light-emitting devices with different colors can be formed in different isolation openings through multiple evaporation and multiple etching processes, and the process is also called light-emitting device patterning.
In the display panel, the problem of bad dark spots easily occurs in the light-emitting device manufactured later, and the display effect of the display panel is seriously affected.
It is found that the main reason for the technical problem is that the package failure of the light emitting device manufactured later causes that water vapor invades into the light emitting device, so that the dark spot of the light emitting device is poor. Further research shows that the package failure of the light-emitting device manufactured later is caused by the fact that the package unit is originally tightly attached to the isolation structure, but the package unit and the isolation structure are separated to form a gap capable of being invaded by water vapor when the temperature changes due to the fact that the thermal expansion coefficients of the package unit and the isolation structure are large in difference.
In order to solve the above technical problems, the following technical solutions are innovatively designed, and the detailed implementation scheme of the present application will be described below with reference to the accompanying drawings. It should be noted that the above solutions in the prior art have drawbacks that are obtained through practical and careful study, and thus, the discovery process of the above technical problem and the solutions presented in the following embodiments for the above problem should not be understood as the technical matters known to those skilled in the art in the present application.
Referring to fig. 1 and 2, fig. 1 illustrates a schematic distribution of isolation structures and isolation openings, and fig. 2 illustrates a schematic cross-sectional view of the AA position in fig. 1. In this embodiment, the display panel 1 includes a substrate 11, an isolation structure 12, a light emitting device 13 and a packaging unit 1611, wherein the substrate 11 may be a multi-film structure, the substrate 11 at least includes a plurality of conductive layers and an insulating layer located between adjacent conductive layers, and a pixel circuit for providing a driving signal for the light emitting device 13 is formed in the substrate 11, and the conductive layers may be metal conductive layers.
The isolation structure 12 is located on one side of the substrate 11, and the isolation structure 12 forms a plurality of isolation openings 1201 on the substrate 11. In a direction away from the substrate 11, the isolation structure 12 includes a first isolation portion 121 and a second isolation portion 122 that are stacked, where a front projection of the first isolation portion 121 on the substrate 11 is located within a front projection of the second isolation portion 122 on the substrate 11, that is, the second isolation portion 122 protrudes toward the corresponding isolation opening 1201 with respect to the first isolation portion 121 to form an undercut structure (undercut structure), by which an entire evaporated light emitting device layer (such as a light emitting material layer, an electrode layer) can be broken at this position, so that a film layer of the light emitting device is independently formed in the different isolation openings 1201.
At least part of the light emitting devices 13 are disposed in the isolation openings 1201, the light emitting devices 13 and the isolation openings 1201 are in one-to-one correspondence, and one light emitting device 13 is disposed in one isolation opening 1201. The display panel 1 includes a plurality of light emitting devices 13 with different light emitting colors, and the display panel 1 includes a red light emitting device, a blue light emitting device, and a green light emitting device, for example, wherein adjacent red light emitting devices, blue light emitting devices, and green light emitting devices may form a pixel unit, and the display brightness and color of each pixel unit may be controlled by controlling the light emitting brightness of the red light emitting devices, blue light emitting devices, and green light emitting devices in each pixel unit, so as to realize the display of a picture on the display panel 1.
The encapsulation unit 1611 is located at a side of the light emitting device 13 away from the substrate 11, and the encapsulation unit 1611 extends from the surface of the light emitting device 13 to a side of the second isolation portion 122 away from the substrate 11 through the first isolation portion 121 toward the sidewall of the isolation opening 1201, i.e., the encapsulation unit 1611 is attached to the sidewall of the first isolation portion 121 toward the isolation opening 1201.
It is found that the encapsulation unit 1611 is generally made of an inorganic material, and the first isolation portion 121 is generally made of a conductive metal, in general, the thermal expansion coefficient of the encapsulation unit 1611 is smaller than that of the first isolation portion 121, and when the temperature changes (for example, when the temperature decreases), the volume shrinkage of the first isolation portion 12 is larger than that of the encapsulation unit 1611, so that the encapsulation unit 1611 for encapsulating the light emitting device 13 is easily separated from the first isolation portion 121 to form a gap into which water vapor can intrude, thereby causing the encapsulation failure, and the dark spot defect occurs in the light emitting device 13.
In this embodiment, the difference in thermal expansion coefficient between the first isolation portion 121 and the packaging unit 161 is within ten percent of the thermal expansion coefficient of the packaging unit 161, and includes ten percent, that is, the thermal expansion coefficients of the first isolation portion 121 and the packaging unit 161 are basically equivalent, so that even if the volume expansion amount or the volume contraction amount of the two components are basically the same due to temperature change, the two components can expand or contract synchronously, so that the surfaces of the two components in contact with each other are always adhered together, no gap is generated, and further, the situation that the first isolation portion 121 and the packaging unit 1611 are separated to form the gap during the temperature change is avoided, the packaging effect of the light emitting device 13 is ensured, and the display effect of the display panel 1 is ensured.
In this embodiment, the first isolation portion 121 is a conductive isolation portion, and the material of the first isolation portion 121 includes at least one metal material. That is, the first isolation portion 121 may be made of a single metal having a thermal expansion coefficient equivalent to that of the material of the package unit 1611, or may be made of a plurality of metals doped. On the premise of ensuring that the first isolation portion 121 has conductivity, it has been found that the use of two metals for mutual doping is easier to achieve.
In detail, in the present embodiment, the material of the first isolation portion 121 includes a bulk metal material and a doped metal material, wherein the mass ratio of the bulk metal material in the first isolation portion 121 is greater than the mass ratio of the doped metal material in the first isolation portion 121. I.e. the bulk metallic material is the main component in the first spacer 121.
Illustratively, the bulk metallic material comprises aluminum, the doped metallic material comprises one of titanium, pickaxe, molybdenum, or beryllium, or the bulk metallic material comprises copper, the doped metallic material comprises tungsten or molybdenum.
In the related art, the first isolation portion 121 is generally made of metal aluminum, but the difference in thermal expansion coefficient between the metal aluminum and the encapsulation unit 1611 is large, and it is easy for the metal aluminum and the encapsulation unit 1611 to be separated to form a gap allowing water vapor to intrude when the temperature is changed. In this embodiment, aluminum metal may be used as the main metal material to change the thermal expansion coefficient of the first isolation portion 121 by doping other metal materials, or other metal materials may be used as the main metal material to dope the first isolation portion 121 corresponding to the thermal expansion coefficient of the package unit 1611 with a different metal.
Illustratively, the bulk metallic material comprises aluminum (Al), the doped metallic material comprises one of titanium (Ti), pick (Zr), molybdenum (Mo), or beryllium (Be), or the bulk metallic material comprises copper (Cu), the doped metallic material comprises tungsten (W) or molybdenum (Mo).
In one possible implementation manner of this embodiment, the bulk metal material includes aluminum (Al), the doped metal material includes titanium (Ti), and the proportion of the mass of the doped metal material to the mass of the bulk metal material in the first isolation portion 121 is 0.1% -0.5%, and exemplary, the proportion of the mass of the doped metal material to the mass of the bulk metal material includes 0.1%, 0.125%, 0.15%, 0.185%, 0.205%, 0.235%, 0.258%, 0.295%, 0.315%, 0.375%, 0.415%, 0.455%, 0.483%, 0.495%, or 0.5%, etc. By the above-described mass ratio doping, the thermal expansion coefficient of the first isolation portion 121 is smaller than that of metal aluminum, specifically, the thermal expansion coefficient of the first isolation portion 121 may be 10% -15% smaller than that of metal aluminum, wherein the thermal expansion coefficient of metal aluminum is 23.6x10 -6/K, that is, in the present embodiment, the thermal expansion coefficient of the first isolation portion 121 is 20.06x10 -6/K~21.24×10-6/K, and the thermal expansion coefficient of the first isolation portion 121 includes 20.06×10-6/K、20.12×10-6/K、20.28×10-6/K、20.37×10-6/K、20.45×10-6/K、20.54×10-6/K、20.67×10-6/K、20.81×10-6/K、20.93×10-6/K、21.03×10-6/K、21.16×10-6/K or 21.24x10 -6/K, or the like, for example.
In another possible implementation manner of this embodiment, the bulk metal material includes aluminum (Al), the doped metal material includes pickaxe (Zr), and in the first isolation portion 121, a proportion of the doped metal material by mass of the bulk metal material is 0.1% -0.3%, and illustratively, a proportion of the doped metal material by mass of the bulk metal material includes 0.1%, 0.115%, 0.125%, 0.145%, 0.183%, 0.192%, 0.2%, 0.205%, 0.221%, 0.25%, 0.265%, 0.273%, 0.283%, 0.296%, or 0.3%, and so on. By the above-described mass ratio doping, the thermal expansion coefficient of the first isolation portion 121 is smaller than that of metal aluminum, specifically, the thermal expansion coefficient of the first isolation portion 121 may be 12% -15% smaller than that of metal aluminum, wherein the thermal expansion coefficient of metal aluminum is 23.6x10 -6/K, that is, in the present embodiment, the thermal expansion coefficient of the first isolation portion 121 is 20.06x10 -6/K~20.77×10-6/K, and the thermal expansion coefficient of the first isolation portion 121 includes 20.06×10-6/K、20.12×10-6/K、20.23×10-6/K、20.31×10-6/K、20.39×10-6/K、20.43×10-6/K、20.46×10-6/K、20.51×10-6/K、20.56×10-6/K、20.63×10-6/K、20.72×10-6/K or 20.7x10 -6/K, or the like, for example.
In still another possible implementation manner of this embodiment, the bulk metal material includes aluminum (Al), the doped metal material includes molybdenum (Mo), and the proportion of the mass of the doped metal material to the mass of the bulk metal material in the first isolation portion 121 is 0.5% -2%, and illustratively, the proportion of the mass of the doped metal material to the mass of the bulk metal material includes 0.5%, 0.55%, 0.65%, 0.78%, 0.83%, 0.92%, 1%, 1.05%, 1.12%, 1.25%, 1.36%, 1.48%, 1.56%, 1.68%, 1.74%, 1.83%, 1.96%, or 2%, and so on. By the above-described mass ratio doping, the thermal expansion coefficient of the first isolation portion 121 is smaller than that of metal aluminum, specifically, the thermal expansion coefficient of the first isolation portion 121 may be 5% -8% smaller than that of metal aluminum, wherein the thermal expansion coefficient of metal aluminum is 23.6x10 -6/K, that is, in the present embodiment, the thermal expansion coefficient of the first isolation portion 121 is 21.71 x10 -6/K~22.42×10-6/K, and the thermal expansion coefficient of the first isolation portion 121 includes 21.71×10-6/K、21.74×10-6/K、21.78×10-6/K、21.85×10-6/K、21.91×10-6/K、21.97×10-6/K、22.03×10-6/K、22.08×10-6/K、22.15×10-6/K、22.27×10-6/K、22.36×10-6/K or 22.42 x10 -6/K, or the like, for example.
In still another possible implementation manner of this embodiment, the bulk metal material includes aluminum (Al), the doped metal material includes beryllium (Be), and the proportion of the mass of the doped metal material to the mass of the bulk metal material in the first isolation portion 121 is 2% -3%, and illustratively, the proportion of the mass of the doped metal material to the mass of the bulk metal material includes 2%, 2.02%, 2.08%, 2.15%, 2.21%, 2.28%, 2.34%, 2.41%, 2.48%, 2.56%, 2.63%, 2.68%, 2.74%, 2.79%, 2.86%, 2.9%, 2.96%, or 3%, and so on. By the above-described mass ratio doping, the thermal expansion coefficient of the first isolation portion 121 is smaller than that of metal aluminum, specifically, the thermal expansion coefficient of the first isolation portion 121 may be 30% -32% smaller than that of metal aluminum, wherein the thermal expansion coefficient of metal aluminum is 23.6x10 -6/K, that is, in the present embodiment, the thermal expansion coefficient of the first isolation portion 121 is 16.05x10 -6/K~16.52×10-6/K, and the thermal expansion coefficient of the first isolation portion 121 includes 16.05×10-6/K、16.07×10-6/K、16.09×10-6/K、16.13×10-6/K、16.17×10-6/K、16.21×10-6/K、16.26×10-6/K、16.32×10-6/K、16.38×10-6/K、16.45×10-6/K、16.5×10-6/K or 16.52 x10 -6/K, or the like, for example.
In still another possible implementation manner of this embodiment, the bulk metal material includes copper (Cu), the doped metal material includes tungsten (W), and in the first isolation portion 121, a proportion of the doped metal material by mass of the bulk metal material is 10% -25%, and illustratively, a proportion of the doped metal material by mass of the bulk metal material includes 10%、10.5%、11.2%、12.5%、13.4%、14.1%、15.2%、15.9%、16.5%、17.1%、17.8%、18.3%、18.8%、19.2%、19.8%、20%、21.5%、23.2%、24.8%% or 25%, and so on.
In still another possible implementation manner of this embodiment, the bulk metal material includes copper (Cu), the doped metal material includes tungsten (molybdenum), and the proportion of the mass of the doped metal material in the first isolation portion 121 is 20% -30% of the mass of the bulk metal material, and illustratively, the proportion of the mass of the doped metal material to the mass of the bulk metal material includes 20%, 20.6%, 21.2%, 22.5%, 23.4%, 24.2%, 25.2%, 25.8%, 26.7%, 27.1%, 27.8%, 28.3%, 28.8%, 29.2%, 29.8%, 20%, or the like.
As is clear from the above embodiments, in the first isolation portion 121 using aluminum or copper as the main metal material, the thermal expansion coefficient of the first isolation portion 121 can be controlled by adjusting the mass ratio of the doped metal material, and when the material of the packaging unit 1611 is changed, the thermal expansion coefficient of the first isolation portion 121 and the thermal expansion coefficient of the packaging unit 1611 can be made substantially equal in the above manner, so that separation of the two due to the difference of the thermal expansion coefficients of the two is avoided, and the packaging effect of the packaging unit 1611 on the light emitting device 13 is ensured not to be affected.
Further, referring to fig. 3, the display panel 1 further includes a pixel defining layer 14, the pixel defining layer 14 is located on one side of the substrate 11, and the isolation structure 12 is located on a side of the pixel defining layer 14 away from the substrate 11. The pixel defining layer 14 comprises pixel openings 1401, at least part of the light emitting devices 13 being located within the pixel openings 1401, the pixel openings 1401 being in communication with the isolation openings 1201, illustratively, the front projections of the pixel openings 1401 on the substrate 11 are located within the front projections of the corresponding isolation openings 1201 on the substrate 11. The front projection of the pixel opening 1401 onto the substrate 11 is located within the front projection of the isolation opening 1201 onto the substrate 11. In the present embodiment, the pixel defining layer 14 may be an organic pixel defining layer or an inorganic pixel defining layer, and preferably, the pixel defining layer 14 is an inorganic pixel defining layer. When the pixel defining layer 14 is an inorganic pixel defining layer, the pixel defining layer 14 may have a single layer structure of silicon oxide (SiOx) or silicon nitride (SiNx), or a stacked structure formed of silicon oxide and silicon nitride alternately.
Referring to fig. 3 again, in a direction away from the substrate 11, the light emitting device 13 includes a first electrode 131, a light emitting material layer 132 and a second electrode 133 stacked in order, at least a portion of the first electrode 131 is exposed from a position of the pixel opening 1401, and the second electrode 133 extends from the pixel opening 1401 to a sidewall of the isolation structure 12 facing the isolation opening 1201 through the pixel defining layer 14, wherein the second electrode 133 may overlap with the first isolation portion 121. Illustratively, the first electrode 131 may be an anode of the light emitting device 13 and the second electrode 133 may be a cathode of the light emitting device 13.
In this embodiment, the isolation structure 12 may enclose to form a plurality of isolation openings 1201, and the arrangement of the isolation structure 12 can form film layers of light emitting devices with different colors in different isolation openings 1201 without a fine metal mask, so as to reduce the manufacturing cost of the display panel. The isolation structure 12 can isolate the light emitting material layer 132 and the second electrode 133 in the light emitting device 13, so that different light emitting devices 13 are independent from each other, thereby improving crosstalk between adjacent light emitting devices 13 and enhancing display effect. And the adjacent light emitting devices 13 are independent of each other to realize independent packaging, so as to improve the packaging yield. Meanwhile, due to the existence of the isolation structure 12, the light emitting material layer 132 and the second electrode 133 in the light emitting device 13 of each color in the display panel can be prepared and then patterned on the whole surface, so that a fine metal mask plate is omitted, and the preparation cost of the display panel is saved.
Further, referring to fig. 4, the isolation structure 12 may further include a third isolation portion 123, where the third isolation portion 123, the first isolation portion 121, and the second isolation portion 122 are sequentially stacked in a direction away from the substrate 11, and an orthographic projection of the third isolation portion 123 on the substrate 11 is located in an orthographic projection of the second isolation portion 122 on the substrate 11. The isolation structure 12 may have an i-shaped cross section in a cross section perpendicular to the plane of the substrate 11 and passing through the center of the isolation opening 1201. The third isolation portion 123 is a conductive isolation portion, and the second electrode 133 may be further electrically connected to the third isolation portion 123, and the second electrode 133 is electrically connected by overlapping the third isolation portion 123, for example.
Further, referring to fig. 5, the display panel 1 further includes a first encapsulation layer 162, the first encapsulation layer 162 is located on a side of the encapsulation unit 1611 away from the substrate 11, and the first encapsulation layer 162 at least covers the encapsulation unit 1611. Optionally, the first encapsulation layer 162 comprises a planar surface on a side remote from the substrate 11.
Further, referring to fig. 4 again, the display panel 1 further includes a second encapsulation layer 163, and the second encapsulation layer 163 is located on a side of the first encapsulation layer 162 away from the substrate 11.
Alternatively, the encapsulation unit 1611 and the second encapsulation layer 163 include an inorganic material, and the first encapsulation layer 162 includes an organic material, i.e., the encapsulation unit 1611 and the second encapsulation layer 163 may be inorganic encapsulation layers, and the first encapsulation layer 162 may be an organic encapsulation layer. For example, the encapsulation unit 1611 and the second encapsulation layer 163 may be formed by chemical vapor deposition (Chemical Vapor Deposition, CVD), and the first encapsulation layer 162 may be formed by inkjet Printing (IJP).
It can be understood that the display panel 1 may further include a touch functional layer, an optical adhesive layer, a polarizer, a cover plate, and other film layers sequentially stacked on the side of the second encapsulation layer 163 away from the substrate 11, and the film layers are conventional film layers of the display panel and will not be described herein in detail.
Based on the same inventive concept, the present embodiment also provides a method for manufacturing a display panel, please refer to fig. 6 and 7, wherein fig. 6 illustrates a flow chart of the method for manufacturing a display panel provided in the present embodiment, fig. 7 illustrates a process flow chart corresponding to fig. 6, and a detailed description is given below of how the present embodiment solves the above technical problems by improving the process in conjunction with fig. 6 and 7.
Step S110, a substrate 11 is provided.
In this embodiment, the substrate 11 is a multi-layer structure, the substrate 11 at least includes a plurality of conductive layers and an insulating layer between adjacent conductive layers, and a pixel circuit for providing a driving signal to the light emitting device can be formed in the substrate 11.
In step S120, isolation structures 12 and isolation openings 1201 are fabricated on the substrate 11.
In this embodiment, the isolation structure 12 includes a first isolation portion 121 and a second isolation portion 122 that are sequentially stacked, where the orthographic projection of the first isolation portion 121 on the substrate 11 is located in the orthographic projection of the second isolation portion 122 on the substrate 11, that is, the second isolation portion 122 protrudes toward the corresponding isolation opening 1201 relative to the first isolation portion 121, and the first isolation portion 121 and the second isolation portion 122 form an undercut structure (undercut structure) so as to form an independent light emitting device in each isolation opening when the device film layer of the light emitting device is evaporated on the whole surface.
In step S130, the light emitting device 13 and the packaging unit 1611 for packaging the light emitting device 13 are formed in the isolation opening 1201, and the packaging unit 1611 and the first isolation portion 121 are bonded to each other toward the side surface of the corresponding isolation opening 1201.
In this embodiment, the difference in thermal expansion coefficient between the first isolation portion 121 and the packaging unit 161 is within ten percent of the thermal expansion coefficient of the packaging unit 161, that is, the thermal expansion coefficients of the first isolation portion 121 and the packaging unit 161 are substantially equivalent, so that when the temperature changes, the volumes of the first isolation portion 121 and the packaging unit 1611 can be kept substantially synchronously changed, and the two cannot be separated to form a gap capable of being invaded by water vapor due to the difference in volume change.
Further, referring to fig. 8 and 9, step S130 may be implemented as follows.
In step S1301, a first isolation material layer 21 and a second isolation material layer 22 are sequentially fabricated on the substrate 11, where the first isolation material layer 21 is fabricated by at least one metal material.
In this embodiment, the specific manner of implementing step S1301 may be as follows.
First, a first isolation material layer 21 formed by doping two different metals is fabricated on a substrate 11 by physical vapor deposition.
Specifically, referring to fig. 10, two different metal targets (e.g., a metal aluminum target and a metal molybdenum target) may be placed in the vacuum chamber 20, first, the substrate 11 is placed in the vacuum chamber 20, then, the metal on the target is converted into a gaseous state by evaporation, sputtering or arc discharge to form two metal gas particles, then, the two metal gas particles are ionized in the vacuum chamber to form two metal plasmas, the two metal plasmas are uniformly mixed, and then, the two mixed metal plasmas may be moved onto the substrate 11 under the action of an electric field, and a first isolation material layer 21 is deposited on the substrate 11.
In the process of converting the metal on the metal target into the gaseous metal particles, the target of one metal is used as a main target, the target of the other metal is used as a doped target, the main target and the doped target are respectively gasified and controlled, the quantity of the gaseous metal particles generated by gasification on the main target is controlled to be larger than that of the gaseous metal particles generated by gasification on the doped target, and specific materials and proportions can be referred to in the foregoing, and are not repeated herein.
The first spacer material layer 21 is formed by depositing gaseous metal particles of two different metals on one side of the substrate 11.
Next, a second isolation material layer 22 is formed on the side of the first isolation material layer 21 away from the substrate 11.
In step S1302, the first isolation material layer 21 and the second isolation material layer 22 are patterned to obtain the isolation structure 12 and the isolation opening 1201, wherein the second isolation portion 122 is formed by the etched second isolation material layer 22, and the first isolation portion 121 is formed by the etched first isolation material layer 21.
Based on the same inventive concept, the embodiment of the application also provides an electronic device, which comprises the display panel provided by the application or the display panel prepared by the preparation method of the display panel provided by the embodiment, and the electronic device can comprise a smart phone, a tablet personal computer, a vehicle-mounted display device, a smart wearable device, a television, a notebook computer and other devices with display functions.
The embodiment of the application provides a display panel, a preparation method of the display panel and electronic equipment, wherein in the display panel, the thermal expansion coefficient of a packaging unit is designed to be equal to that of a first isolation part, so that even if the temperature changes, the volume change amounts of the packaging unit and the first isolation part are equal, namely the packaging unit and the first isolation part can expand or contract synchronously, the two surfaces which are contacted with each other can be ensured to be always adhered together, gaps can not occur, the situation that the first isolation part and the packaging unit are separated to form the gaps during the temperature changes is avoided, the packaging of a light-emitting device can not be invalid due to the gaps between the first isolation part and the packaging unit, and the display effect of the display panel is ensured.
The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
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| US6998776B2 (en) * | 2003-04-16 | 2006-02-14 | Corning Incorporated | Glass package that is hermetically sealed with a frit and method of fabrication |
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| JP2018180373A (en) * | 2017-04-17 | 2018-11-15 | セイコーエプソン株式会社 | Electrophoresis apparatus and electronic device |
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