CN1201337C - 导电糊剂和使用该糊剂制备的半导体装置 - Google Patents
导电糊剂和使用该糊剂制备的半导体装置 Download PDFInfo
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- CN1201337C CN1201337C CNB021251010A CN02125101A CN1201337C CN 1201337 C CN1201337 C CN 1201337C CN B021251010 A CNB021251010 A CN B021251010A CN 02125101 A CN02125101 A CN 02125101A CN 1201337 C CN1201337 C CN 1201337C
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- WJXKWIFHRZWPET-UHFFFAOYSA-N tert-butyl dodecanoate Chemical compound CCCCCCCCCCCC(=O)OC(C)(C)C WJXKWIFHRZWPET-UHFFFAOYSA-N 0.000 description 1
- SCSLUABEVMLYEA-UHFFFAOYSA-N tert-butyl pentanoate Chemical compound CCCCC(=O)OC(C)(C)C SCSLUABEVMLYEA-UHFFFAOYSA-N 0.000 description 1
- GSECCTDWEGTEBD-UHFFFAOYSA-N tert-butylperoxycyclohexane Chemical compound CC(C)(C)OOC1CCCCC1 GSECCTDWEGTEBD-UHFFFAOYSA-N 0.000 description 1
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 150000003739 xylenols Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29499—Shape or distribution of the fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Conductive Materials (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Powder Metallurgy (AREA)
- Wire Bonding (AREA)
- Paints Or Removers (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001197147A JP3854103B2 (ja) | 2001-06-28 | 2001-06-28 | 導電性ペースト及び該ペーストを用いてなる半導体装置 |
JP197147/2001 | 2001-06-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1395259A CN1395259A (zh) | 2003-02-05 |
CN1201337C true CN1201337C (zh) | 2005-05-11 |
Family
ID=19034803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021251010A Expired - Lifetime CN1201337C (zh) | 2001-06-28 | 2002-06-28 | 导电糊剂和使用该糊剂制备的半导体装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6733695B2 (zh) |
JP (1) | JP3854103B2 (zh) |
CN (1) | CN1201337C (zh) |
DE (1) | DE10228484B4 (zh) |
SG (1) | SG104973A1 (zh) |
TW (1) | TWI233620B (zh) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004139838A (ja) * | 2002-10-17 | 2004-05-13 | Noritake Co Ltd | 導体ペーストおよびその利用 |
TWI325739B (en) * | 2003-01-23 | 2010-06-01 | Panasonic Corp | Electroconductive paste, its manufacturing method, circuit board using the same electroconductive paste, and its manufacturing method |
JP2005002335A (ja) * | 2003-05-21 | 2005-01-06 | Japan Gore Tex Inc | 接着フィルムおよびこれを使った半導体装置 |
JP4635423B2 (ja) * | 2003-09-11 | 2011-02-23 | 住友ベークライト株式会社 | 半導体用樹脂ペースト及び半導体装置 |
JP2005240092A (ja) * | 2004-02-26 | 2005-09-08 | Dowa Mining Co Ltd | 銀粉およびその製造方法 |
JP2005272627A (ja) * | 2004-03-24 | 2005-10-06 | Sumitomo Bakelite Co Ltd | 樹脂組成物及び樹脂組成物を使用して作製した半導体装置 |
JP2005272709A (ja) * | 2004-03-25 | 2005-10-06 | Sumitomo Bakelite Co Ltd | 樹脂組成物及び樹脂組成物を使用して作製した半導体装置 |
US20060086773A1 (en) * | 2004-10-27 | 2006-04-27 | Sanftleben Henry M | Technique for optical inspection system verification |
DE202005021556U1 (de) | 2005-07-20 | 2008-08-28 | Biolog Biotechnologie Und Logistik Gmbh | Lösbarer elektrisch leitender Werkstoff auf der Basis funktionaler Saccharide und metallischer Partikel |
WO2007042071A1 (de) * | 2005-10-10 | 2007-04-19 | Alphasem Ag | Baugruppe mit wenigstens zwei in elektrisch leitender wirkverbindung stehenden komponenten und verfahren zum herstellen der baugruppe |
JP5098175B2 (ja) * | 2006-01-06 | 2012-12-12 | 住友ベークライト株式会社 | 樹脂組成物及び樹脂組成物を使用して作製した半導体装置 |
DE602006001393D1 (de) * | 2006-03-06 | 2008-07-17 | Umicore Ag & Co Kg | Zusammensetzung zur Befestigung von Hochleistungshalbleiter |
JP4974803B2 (ja) * | 2007-08-03 | 2012-07-11 | タツタ電線株式会社 | プリント配線板用シールドフィルム及びプリント配線板 |
JP5027598B2 (ja) * | 2007-09-10 | 2012-09-19 | 京セラケミカル株式会社 | 接着剤組成物およびそれを用いた半導体装置 |
CN101878509B (zh) * | 2007-11-28 | 2012-08-29 | 松下电器产业株式会社 | 导电糊及使用该导电糊的电气电子设备 |
JP5257574B2 (ja) * | 2007-12-10 | 2013-08-07 | 福田金属箔粉工業株式会社 | 無溶剤型導電性接着剤 |
JP2011524068A (ja) * | 2008-05-28 | 2011-08-25 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 光電池の導体に使用されるサブミクロン粒子を含む組成物 |
CN102017013A (zh) * | 2008-05-28 | 2011-04-13 | E.I.内穆尔杜邦公司 | 用于光伏电池的导体:包含亚微米颗粒的组合物 |
KR20100109416A (ko) * | 2009-03-31 | 2010-10-08 | 디아이씨 가부시끼가이샤 | 도전성 페이스트 조성물 및 그 제조 방법 |
CN102576766A (zh) * | 2009-10-15 | 2012-07-11 | 日立化成工业株式会社 | 导电性粘接剂、太阳能电池及其制造方法、以及太阳能电池模块 |
JP5321445B2 (ja) * | 2009-12-28 | 2013-10-23 | 住友ベークライト株式会社 | 半導体装置の製造方法 |
JP5580701B2 (ja) * | 2010-09-13 | 2014-08-27 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
EP2431438B1 (en) | 2010-09-20 | 2012-11-28 | Henkel AG & Co. KGaA | Electrically conductive adhesives |
TW201227761A (en) | 2010-12-28 | 2012-07-01 | Du Pont | Improved thick film resistive heater compositions comprising ag & ruo2, and methods of making same |
US20130319499A1 (en) * | 2011-01-27 | 2013-12-05 | Hitachi Chemical Company, Ltd. | Conductive binder composition and method for producing the same, bonded unit, and solar cell module and method for producing the same |
WO2012126391A1 (en) * | 2011-03-22 | 2012-09-27 | Nano And Advanced Materials Institute Limited | HIGH PERFORMANCE DIE ATTACH ADHESIVES (DAAs) NANOMATERIALS FOR HIGH BRIGHTNESS LED |
TWI608062B (zh) * | 2011-05-31 | 2017-12-11 | 住友電木股份有限公司 | 樹脂組成物、使用它之半導體裝置及半導體裝置之製造方法 |
WO2012176831A1 (ja) * | 2011-06-21 | 2012-12-27 | 住友金属鉱山株式会社 | 銀粉及びその製造方法 |
JP5814029B2 (ja) * | 2011-07-26 | 2015-11-17 | 日東電工株式会社 | 半導体装置製造用の接着シート、及び、半導体装置製造用の接着シートを有する半導体装置 |
US10403769B2 (en) | 2012-08-31 | 2019-09-03 | Heraeus Deutschland GmbH & Co. KG | Electro-conductive paste comprising Ag nano-particles and spherical Ag micro-particles in the preparation of electrodes |
US9171804B2 (en) | 2012-11-19 | 2015-10-27 | Infineon Technologies Ag | Method for fabricating an electronic component |
EP2763141B1 (en) * | 2013-02-01 | 2016-02-03 | Heraeus Precious Metals North America Conshohocken LLC | Low fire silver paste |
JP6106148B2 (ja) * | 2013-11-27 | 2017-03-29 | 日東電工株式会社 | 導電性粘着テープ、電子部材及び粘着剤 |
JP6337909B2 (ja) * | 2014-02-04 | 2018-06-06 | 株式会社村田製作所 | 電子部品モジュールの製造方法 |
JP2017221863A (ja) * | 2014-10-30 | 2017-12-21 | シンクランド株式会社 | 目詰まり推測方法及びフィルタ監視システム |
CN110073445B (zh) * | 2016-12-14 | 2023-11-17 | 国立研究开发法人科学技术振兴机构 | 伸缩性导电体、伸缩性导电体形成用糊剂以及伸缩性导电体的制造方法 |
US11118089B2 (en) * | 2017-06-07 | 2021-09-14 | Tanaka Kikinzoku Kogyo K.K. | Thermally-conductive and electrically-conductive adhesive composition |
CN109119381A (zh) * | 2018-08-06 | 2019-01-01 | 上海长园维安微电子有限公司 | 一种提高n衬底单向负阻型tvs芯片封装良率的胶水 |
KR20220137866A (ko) * | 2020-02-13 | 2022-10-12 | 도레이 카부시키가이샤 | 페이스트, 기판, 디스플레이, 및 기판의 제조 방법 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3778592B2 (ja) * | 1995-04-19 | 2006-05-24 | 東洋紡績株式会社 | 金属めっき下地用導電性ペースト |
JPH09176448A (ja) * | 1995-12-25 | 1997-07-08 | Matsushita Electric Ind Co Ltd | 導電ペースト |
JPH09282941A (ja) * | 1996-04-16 | 1997-10-31 | Ube Ind Ltd | 導電性ペースト並びにそれを用いた積層セラミック電子部品およびその製造方法 |
US5908881A (en) * | 1996-11-29 | 1999-06-01 | Sumitomo Bakelite Company Limited | Heat-conductive paste |
JPH11150135A (ja) * | 1997-11-17 | 1999-06-02 | Nec Corp | 熱伝導性が良好な導電性ペースト及び電子部品 |
JP3416044B2 (ja) * | 1997-12-25 | 2003-06-16 | 第一工業製薬株式会社 | 低温焼成基板用導電ペースト |
JP3747995B2 (ja) * | 1998-08-11 | 2006-02-22 | 住友ベークライト株式会社 | 導電性樹脂ペースト及びこれを用いた半導体装置 |
KR100369565B1 (ko) * | 1999-12-17 | 2003-01-29 | 대주정밀화학 주식회사 | 전기발열체용 저항 페이스트 조성물 |
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2001
- 2001-06-28 JP JP2001197147A patent/JP3854103B2/ja not_active Expired - Lifetime
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2002
- 2002-06-19 SG SG200203709A patent/SG104973A1/en unknown
- 2002-06-21 US US10/176,377 patent/US6733695B2/en not_active Expired - Lifetime
- 2002-06-26 TW TW091114049A patent/TWI233620B/zh not_active IP Right Cessation
- 2002-06-26 DE DE10228484A patent/DE10228484B4/de not_active Expired - Fee Related
- 2002-06-28 CN CNB021251010A patent/CN1201337C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3854103B2 (ja) | 2006-12-06 |
DE10228484B4 (de) | 2009-10-15 |
US20030122257A1 (en) | 2003-07-03 |
CN1395259A (zh) | 2003-02-05 |
US6733695B2 (en) | 2004-05-11 |
DE10228484A1 (de) | 2003-01-16 |
SG104973A1 (en) | 2004-07-30 |
JP2003016838A (ja) | 2003-01-17 |
TWI233620B (en) | 2005-06-01 |
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