CN120073487A

CN120073487A - Adapter coupling type ion forming device

Info

Publication number: CN120073487A
Application number: CN202411689806.6A
Authority: CN
Inventors: 朴镇浩; 李光载; 林荣振
Original assignee: Responsible City Tema Co ltd
Current assignee: Responsible City Tema Co ltd
Priority date: 2023-11-28
Filing date: 2024-11-25
Publication date: 2025-05-30

Abstract

An embodiment provides an adapter-coupled ion forming apparatus including an ion source having an output portion communicating with a chamber through a through hole, generating ions between an anode electrode and a cathode electrode by a voltage applied from a source body to the anode electrode of the output portion, thereby forming ions in an inner space of the chamber, and removing static electricity on a target surface by the formed ions, and an adapter including a first connection member communicating with the through hole formed at one port of a vacuum chamber, and a second connection member coupled to the ion source communicating through the through hole.

Description

Adapter coupling type ion forming device

Technical Field

The present embodiment relates to an ion forming apparatus coupled to an adapter that can combine an ion source with a chamber, and more particularly, to a technique for removing static electricity by forming ions in an inner space of the chamber.

Background

There are various causes of static electricity generation, and friction, peeling and the like are one of the main causes. The static electricity is generated in various environments such as solid, liquid, insulator, and conductor. The static electricity thus generated generates positive and negative charges in equal amounts. In the actual process, static electricity of one polarity only appears in many cases due to the difference of two electrostatic capacities.

In addition, static electricity is generated in the manufacturing process of electronic devices such as memory elements, flat panel display devices, integrated circuits, etc., which causes various problems. In particular, static electricity is generated, which may cause foreign materials to adhere to the electronic device or may discharge static electricity to damage the pattern.

In order to suppress or remove the static electricity, various methods are suggested, and a static electricity removing method using an ionization device is mainly suggested. The ionization device generates cations and anions to be discharged into the air, and the generated ions neutralize charged particles of the substrate generating static electricity to remove the static electricity.

However, the conventional ionization apparatus discharges ions to the air in a non-vacuum environment, and thus, it has a problem that it is difficult to use in a vacuum environment requiring high cleanliness. Accordingly, the conventional static electricity removing process is subjected to two steps of forming a thin film in a vacuum environment and then performing an additional static electricity removing process in a non-vacuum environment.

The above conventional static electricity removing apparatus separates a thin film process and an anti-static process, which cannot immediately remove static electricity generated when forming a thin film, and thus has a limitation in preventing damage to elements.

In addition, the conventional static electricity removing apparatus directly irradiates ion particles and ion light generated in the ion generating process to the substrate, which may cause damage to the substrate.

In order to solve such a problem, it is actually demanded to develop an electrostatic removing device which is more effective and technically developed.

Disclosure of Invention

Problems to be solved

In view of the above, it is an object of the present embodiment to provide a technique that can improve the above-described problems.

It is another object of this embodiment to provide a technique that minimizes the effects of chamber process conditions, thereby minimizing the effects of the static electricity removal device on the specific process within the chamber.

It is yet another object of this embodiment to provide a technique that minimizes chamber modification and allows for the addition of static electricity removal devices without replacing existing chambers.

Solution to the problem

To achieve the above object, an embodiment provides an adapter-coupled ion forming apparatus, which may include:

An ion source having an output portion communicating with a chamber through a through hole, generating ions between an anode electrode and a cathode electrode by a voltage applied from a source to the anode electrode of the output portion, thereby forming ions in an internal space of the chamber, and removing static electricity on a surface of a target by the formed ions, and

An adapter including a first connection member communicating with a through hole formed at a port of the vacuum state chamber, and a second connection member coupled with the ion source communicating through the through hole.

The first connection member may include a through-hole connection member connected to the through-hole, an output pipe extension member for extending an output pipe formed in the through-hole connection member, and a port connection member coupled to a port of the chamber.

When the ions are output by the output pipe, the output force can be adjusted by widening or narrowing the output direction.

The output pipe extension member is inclined so as to adjust the output direction of ions.

The output pipe extension member may be inclined toward at least one of an upper side, a lower side, a left side and a right side.

The length of the output tube extension member may be adjusted to control the output force of the ions.

The first connection member may further include a barrier support member so as to provide a barrier toward an inner space direction of the chamber, the barrier support member extending toward a center portion direction of the through hole.

The barrier support member may include a barrier support length adjustment portion for adjusting a barrier position.

The first connection member may further include a plurality of barrier support members so as to provide a plurality of barriers toward the inner space of the chamber.

The second connecting member may be combined with a device having a sectional area different from that of the through hole.

To achieve the above object, another embodiment provides an ion forming apparatus including an adapter, which may include:

An adapter comprising a first connecting member communicating with a through-hole formed by a port of a vacuum chamber and a second connecting member coupled to a device having a cross-sectional area different from that of the through-hole and coupling the chamber to the device so as to prevent inflow of an external fluid, and

And an ion source having an output portion exposing the anode electrode and communicating with the chamber, wherein ions are generated between the anode electrode and the cathode electrode by a voltage applied from the source to the anode electrode of the output portion, thereby forming ions in an internal space of the chamber.

The chamber may include a service port (service port) that is connected to the public and auxiliary devices and a view port (view port) that allows visual inspection within the chamber.

The one port connected to the ion source may be a service port or a view port.

The second connection member may be combined with the output part.

The first connection member may include a through-hole connection member connected to the through-hole, and an output pipe extension member for extending an output pipe formed in the through-hole connection member.

The first connection member and the second connection member may be provided with a plurality of holes for coupling the coupling parts.

The first connecting member may include a first seal made of a flexible material disposed opposite the through hole, and the second connecting member may include a second seal made of a flexible material disposed opposite the output portion.

The first connection member may further include a barrier support member so as to dispose a barrier toward an inner space of the chamber.

To achieve the above object, another embodiment provides an ion forming apparatus, which may include:

The adapter comprises an extension member and a connecting member, wherein the extension member is communicated with a through hole formed by one port of the vacuum state chamber, the connecting member is combined with an ion source positioned outside the chamber, and the extension member is inclined so as to adjust the output direction of ions.

The one port connected to the ion source may be at least one of a service port and a view port.

The output part may further include an opening part opened toward the one port, through which the anode electrode may be exposed toward the chamber direction.

The extension member may be inclined toward at least one of upper, lower, left and right sides.

The target may be disposed on an extension line of the extension member.

The length of the extension member may be adjusted to control the output force of the ions.

The extension member may be connected to a port coupling frame to which the port is coupled.

The extension member may further include a barrier support member so as to provide a barrier toward the inner space direction of the chamber, the barrier support member extending toward the center portion direction of the through hole.

The baffle support member is extended toward the center of the through hole so that the baffle is positioned at the center of the through hole.

The barrier support member may include a length adjusting part capable of adjusting a position of the barrier.

The barrier support member may be fastened to the port coupling frame through a groove formed at one side of the through hole.

The extension member may further include a plurality of barrier support members so as to provide a plurality of barriers toward the inner space of the chamber.

The plurality of barrier support members may be extended toward a center portion of the through hole such that the plurality of barriers are positioned at the center portion of the through hole.

The connection member may be combined with the output portion.

The connection member may be provided with a plurality of holes for coupling the coupling parts.

The connecting member may include a flexible seal disposed opposite the output portion.

Another embodiment provides an ion forming system, comprising:

a plurality of ion sources, the output parts of which are communicated with the chamber through the through holes, ions are generated between the anode electrode and the cathode electrode by utilizing the voltage of the anode electrode which is communicated with the output parts from the source body, thereby forming ions in the inner space of the chamber, and

The plurality of port coupling members are used for enabling the plurality of ion sources positioned outside the chamber to be communicated with the chamber through the plurality of adapters, the plurality of adapters comprise extension members and connecting members, the extension members are inclined so as to adjust the output direction of ions, and the connecting members are used for being combined with the ion sources.

The extension member may be connected to a port coupling frame to which a port formed by the through hole is coupled.

The extension member may further include a barrier support member to facilitate the positioning of the barrier toward the interior space of the chamber.

The shutter support member may be extended toward a center portion of the through hole such that the shutter is positioned at the center portion of the through hole.

Effects of the invention

As described above, the present embodiment has an effect of improving the above-described problem.

Furthermore, the embodiment can minimize the influence on the process conditions of the chamber, thereby minimizing the influence of the static electricity removing device on the specific process in the chamber.

Furthermore, the chamber of the embodiment minimizes the reformation of the chamber, the existing chamber can be not replaced, and the static electricity removing device is added.

Further, the present embodiment provides an ion forming apparatus and an ion forming system that can effectively remove static electricity by adjusting an ion output direction by an adapter.

The technical problem to be solved herein is not limited to the above technical problem, and a person of ordinary skill in the art to which the present invention pertains can clearly understand yet another technical problem not mentioned by the following description.

Drawings

Fig. 1 shows a chamber that provides a specific process-implementation space for a target in a vacuum state.

Fig. 2 is a view of an ion forming apparatus in combination with a chamber according to one embodiment.

Fig. 3 is a side cross-sectional view of an ion source according to an embodiment.

Fig. 4 is a top partial view of an ion source according to one embodiment.

Fig. 5 and 6 are views of an ion source coupled to a chamber through an adapter as described in the first example.

Fig. 7 is a cross-sectional view of an ion source coupled to a chamber through an adapter as described in the first example.

Fig. 8 is a block diagram of an ion forming apparatus including the adapter of the first example.

Fig. 9 is an oblique view of the adapter of the first example.

Fig. 10 is a front side oblique view of the adapter of the second example.

Fig. 11 is a rear side oblique view of the adapter of the second example.

Fig. 12 is an enlarged view of a baffle support member according to one embodiment.

Fig. 13 and 14 show an ion source connected to a chamber through an adapter as described in the second example.

Fig. 15 is a view of a chamber with a second example of an adapter attached to a port.

Fig. 16 is a plan view of an ion formation system according to an embodiment.

Fig. 17 is a side view of an ion forming system according to an embodiment.

* Reference sign:

1 target 10 chamber 20 service port

30 View port 40 process port

200 Ion forming apparatus 210 ion source 211 source body

212 Output 220 port coupling member 221 first zone

222 Second zone 223 port coupling frame 225 perspective window coupling frame

226 Through hole 227 adapter 228 first connecting member

228A, through-hole connection member 228b, output tube extension member 228c, port connection member

228D, baffle support member 228e, baffle support length adjustment portion 229, second connecting member

310 Anode electrode 320 cathode electrode 322 central cathode electrode

324 Edge cathode electrode 326 cathode electrode coupling 330 output housing

331 Casing joint 332, coupling member 340, baffle plate

341 Baffle plate connection 400 ion forming system

Detailed Description

Hereinafter, a partial embodiment of the present invention is described in detail by way of schematic drawings. It should be noted that when reference is made to components of each drawing, even though the same components are shown on different drawings, they have the same reference numerals as much as possible. In describing the present invention, a detailed description of known components or functions thereof will be omitted when it may be considered that the gist of the present invention is confused with the detailed description thereof.

Also, in describing the components of the present invention, terms such as first, second, A, B, (a), (b), and the like may be used. Such terms are used merely to distinguish one element thereof from another element and do not limit the nature or order or sequence of the elements or the like. It will be understood that when an element is referred to as being "connected," "coupled" or "connected" to another element, it can be directly connected or connected to the other element, but each element can be connected, coupled or connected to the other element.

As shown in fig. 1, a specific process may be performed on the object 1 in a high vacuum state in the chamber 10.

The process art understands the pressure range of 10 ^-3 to 10 ^-9 Torr (Torr) as a high vacuum state. In the high vacuum state, most of air molecules are removed, and mutual collision between common gas and gas molecules hardly occurs. In addition to the high vacuum state, the medium vacuum state can be classified into a medium vacuum state, which is generally understood to be equivalent to a pressure range of 1 to 10 ^-3 Torr (Torr), and a low vacuum state, which is understood to be a pressure range of 1 Torr (Torr) in the atmospheric pressure. Medium vacuum conditions are understood to be suitable for evaporation, drying, partial coating processes, etc., and low vacuum conditions are well known for commercial use in vacuum cleaners, vacuum packaging machines, etc.

It is well known that various processes in the process art are accomplished in a high vacuum state.

Typically high vacuum deposition techniques. The high vacuum deposition technique is to evaporate a precursor (Precusor) of a substance to be deposited in a gaseous state in a vacuum atmosphere to form a condensed phase of a thin film on a substrate surface. The process may be used to transfer a substance from a surface to the surface of a target and is accomplished under high vacuum conditions, and is therefore also referred to as high vacuum deposition. High vacuum deposition techniques can be used in semiconductor manufacturing, optical coating, fabrication processes for various sensors and electronic devices, for extremely refining of materials or to obtain extremely thin coatings.

Among the high vacuum depositions, physical vapor deposition (PVD: physical Vapor Deposition), chemical vapor deposition (CVD: chemical Vapor Deposition), and the like are most common. PVD may comprise a process of physically evaporating a substance and transferring the vapor to a target, and CVD may comprise a process of bringing the substance to be deposited into a gaseous state, placing the gas on the target (1), and then allowing a deposition chemical reaction to occur.

Physical Vapor Deposition (PVD) includes processes such as vacuum deposition (Evaporation), sputtering (Sputtering), ion Plating (Ion Plating), and Chemical Vapor Deposition (CVD) includes processes such as APVCD, LPCVD, PECVD, HDPCVD, ALCVD.

In one example of the invention, the particular process performed within the chamber (10) may include at least one of a vacuum PVD (Physical Vapor Deposition) and a vacuum CVD (Chemical Vapor Deposition) process, preferably, may be a vacuum PVD (Physical Vapor Deposition), and more preferably, may be a vacuum deposition method (Evaporation).

Also, an organic deposition process may be performed with respect to the object 1 within the chamber 10. The organic deposition process is typically accomplished in a high vacuum state. The organic deposition process needs to keep the purity of the organic constant, while in a high vacuum state, interactions with other gases are minimized, thus being more advantageous to maintain the purity of the organic. Also, in a high vacuum state, a high quality coating having a desired thickness and structure can be prepared, which characteristics are advantageous for use in organic deposition processes. In addition, molecules can move straight to the target object 1 unidirectionally from the source in the high vacuum state, collision or reaction with other gases is less in the high vacuum state, and deposition efficiency is high, which is one of reasons for adapting the process in the high vacuum state to the organic matter deposition process.

The chamber 10 may include or be connected with a high vacuum state holding device. For example, the chamber 10 may include a vacuum gauge for evacuating gas from the chamber 10 to form a vacuum state, and a holding vacuum pump connected to monitor and detect the pressure in the chamber 10 continuously.

In addition, the chamber 10 is not limited to the process chamber, and may include a non-process chamber, and may include various chambers applied in a vacuum state.

In order to achieve a particular process within the chamber 10, the chamber 10 may be formed with a plurality of ports 20, 30, 40.

The chamber 10 may be formed with a Process Port 40. The process ports 40 may be connection points that are directly related to the particular process being performed by the chamber 10. Gases, liquids, or materials required for a particular process may be introduced into chamber 10 through process port 40. Or means for detecting or analyzing conditions within the chamber 10 may be connected to the process port 40 in order to perform a particular process. The process port 40 may be custom designed to meet the requisite requirements of a particular process, with a high likelihood of limited use for other applications. For example, the process port 40 may be a port that delivers a reactive gas in chemical vapor deposition, a port that delivers a target material in physical vapor deposition, or the like.

The chamber 10 may be formed with a Service Port 20 (Service Port). Service port 20 may be a connection point associated with maintenance chamber 10. The service port 20 may be used to connect utility and auxiliary devices such as vacuum pumps, cooling systems, power supplies, vacuum gauges, and the like.

The chamber 10 may be formed with a View Port 30. Maintenance personnel can directly visually observe the process conditions inside the chamber 10 through the vision port 30. Or a management device (e.g., a camera or other optical device) is coupled to the viewport 30 for maintenance personnel to remotely monitor the process conditions within the chamber 10. The viewing port (30) includes a perspective window that may be made of tempered glass, ceramic, industrial diamond, quartz, industrial sapphire, reinforced plastic, and the like. The material can withstand extreme environments, such as high vacuum and high temperature, and has higher optical transparency. In addition, the view port 30 may have a sealing structure to prevent vacuum leakage so as not to affect the high vacuum state within the chamber 10.

As shown in fig. 1, the service port 20 is located higher than the view port 30, but the service port 20 and the view port 30 may be arranged at different positions without being limited thereto.

A specific process is completed in the chamber 10 including the structure and the apparatus, at which time the formation of static electricity on the object 1 may cause a problem.

There are various causes of static electricity formation in the object 1. For example, friction may occur between the object 1 and other objects to cause static electricity formation, unbalanced charge distribution may be formed during deposition or etching in a specific process step to cause static electricity formation on the object 1, or an insulating layer may be disposed on the object 1 to cause blocking of charge migration to form static electricity and further accumulate.

The static electricity also forms a voltage high enough to damage the microstructure of the target 1, creating a force to pull or push the particles in the chamber 10 toward the target 1, resulting in process defects, and in addition, affecting the electrical characteristics of the target 1, reducing the overall performance of the process apparatus.

In order to solve the above-described problems, embodiments of the present specification provide an ion forming apparatus for removing static electricity in a chamber 10, in particular, static electricity formed by a target 1. The ion forming apparatus minimizes the process conditions affecting the chamber 10, thereby minimizing the impact of the ion forming apparatus on a particular process within the chamber 10, and minimizing the modification of the chamber 10, without replacing the existing chamber 10 and adding ion forming apparatus.

The ion forming apparatus may form ions in the inner space of the chamber 10 by using the high vacuum state of the chamber 10 without further feeding another working gas.

The ion forming device includes an ion source, and an electric field can be formed between electrodes disposed on the ion source. Electrons released from one of the ion source electrodes are accelerated in an electric field between the electrodes and output, and the accelerated electrons collide with gas molecules in a high vacuum state in the chamber 10, thereby ionizing the gas molecules to form a plurality of ions. The ions can migrate toward the target 1 and remove static electricity generated by the target 1. This phenomenon is also called a Townsend discharge in a high vacuum state, but the present invention is not limited thereto.

The ion forming device does not further deliver additional working gas and does not include additional vacuum devices, thus minimizing the effects on the process conditions of the chamber 10. Further, the ion forming apparatus does not further convey an additional working gas and does not include an additional vacuum apparatus, and thus, the structure can be simplified with minimal modification of the chamber 10.

To minimize modification of the chamber 10, the ion source may be combined with the service port 20 or view port 30.

As shown in fig. 2, the ion forming apparatus 200 may include an ion source 210 and a port coupling member 220. The port coupling member 220 may be a device that supports the ion source 210 in combination with the viewport 30.

The port coupling member 220 may include a first region configured with a perspective window for a viewer to visually observe the inner space of the chamber 10, and a second region configured with a through hole for coupling with the ion source 210. The first and second regions may be secured to the chamber 10 by a view port coupling frame.

The perspective window is configured in the first area and can be in a round shape so as to be tightly combined with the first area.

The first region includes a1 st-1 st region configured with a first perspective window for observing one side of the inner space of the chamber 10, and a1 st-2 nd region configured with a second perspective window for observing the other side of the inner space of the chamber 10, the 1 st-1 st region and the 1 st-2 nd region being disposed opposite to each other. And zones 1-1 and 1-2 may include a window coupling frame to facilitate securing the window to the chamber 10.

The second region may be disposed between regions 1-1 and 1-2. And, the second region may include an adapter for coupling the ion source 210 with the through hole. Wherein the adapter may include a first connection member coupled to the through hole and a second connection member coupled to the output of the ion source 210. Further, the through-hole and the ion source 210 output may have cross sections of different sizes.

Also, the ion forming apparatus 200 may include a service port coupling member (not shown) instead of the port coupling member 220. The service port coupling member (not shown) may be a device that supports the ion source 210 in combination with the service port 20. In one embodiment, instead of having a service port coupling member (not shown), a partial construction of the ion source 210 may replace the function of the service port coupling member (not shown).

Further, the ion forming apparatus 200 may further include means for adjusting the ion output direction so that ions are formed along the direction of the target 1 to which a specific process is applied.

The ion forming apparatus 200 may include an adapter for connecting one port of the chamber 10 with the ion source 210, and the adapter may include a first connection member coupled with a through hole formed at one port of the chamber and a second connection member coupled with an output portion of the exposed anode electrode. Wherein the through hole coupled with the first connection member and the output portion coupled with the second connection member may have different cross sections.

In addition, when ions are output by the output pipe, the output force can be adjusted by widening or narrowing the output direction.

The first and second connection members may be provided with a plurality of holes for coupling the coupling parts. The first connecting member may include a first seal made of a flexible material disposed opposite the through hole, and the second connecting member may include a second seal made of a flexible material disposed opposite the output portion.

The first connection member may further include a barrier support member so as to dispose a barrier toward the inner space of the chamber 10. Wherein the baffle plate is circular, rectangular, conical and polygonal with at least one slot, and can output ions along the direction with the slot. And, the barrier and the barrier support member may be connected at a distance by a barrier connection portion.

The ion source 210 may include a source body 211 and an output 212.

The source 211 may include a power supply. The power supply device may apply a specific voltage to the electrode provided in the output unit 212. The specific voltage may be a high voltage, or may be a voltage equivalent to several hundreds to several thousands of volts. The power supply device may receive a high voltage from the outside through the cable and then supply the high voltage to the electrode, and may receive a voltage having a voltage level lower than the high voltage from the outside and then supply the high voltage to the electrode through the power transformer.

In order to prevent electromagnetic waves generated by the power supply device or the like from propagating to the outside including the chamber 10, the source body 211 may be surrounded by a metal case.

The output unit 212 may be opened toward the service port 20 and closed on the other side. The output portion 212 may communicate with the internal space of the chamber 10 in the high vacuum state through the service port 20, and the space may not communicate at all. For example, the output portion 212 is not in communication with the source 211, and may not be in direct communication with the external space of the chamber 10.

When the internal space of the chamber 10 is maintained in a high vacuum state (for example, 10 ^-3 to 10 ^-9 torr, preferably, 10 ^-5 to 10 ^-9 torr), the internal atmosphere of the output portion 212 communicating therewith may also be maintained in a high vacuum state. Thus, the ion forming apparatus of one embodiment does not further deliver additional working gas and does not include additional vacuum devices, and thus, process conditions of the chamber 10 may be minimally affected. Further, the ion forming apparatus of one embodiment does not further deliver additional working gas and does not include additional vacuum means, and thus, the structure can be simplified with minimal modification of the chamber 10.

In this high-vacuum atmosphere, when a specific voltage is applied to the electrode of the output unit 212 from the source 211, ions can be formed in the inner space of the chamber 10 in the high-vacuum state.

Ions formed in the inner space of the chamber 10 can contact the target 1 and simultaneously prevent the target 1 from static electricity.

The chamber 10 communicates with the interior space of the output portion, sharing a vacuum state of 10 ^-3 to 10 ^-9 torr, preferably 10 ^-5 to 10 ^-9 torr.

The chamber 10 may perform certain processes requiring a vacuum. The specific process may include at least one of a vacuum PVD (Physical Vapor Deposition) and a vacuum CVD (Chemical Vapor Deposition) process for depositing a substance on the object 1. And, the specific process may further include a vacuum process for depositing an organic matter on the target. To perform this particular process, the chamber 10 may be maintained in a vacuum state.

The vacuum may be 10 ^-3 to 10 ^-9 torr, preferably 10 ^-5 to 10 ^-9 torr.

The chamber 10 and the internal space of the output section communicate with each other, and therefore, a vacuum pump and an ionized gas injection device may not be provided.

The chamber 10 may include a service port 20 (service port) for connecting public and auxiliary devices and a view port 30 (view port) through which the interior of the chamber may be visually observed.

The output portion 212 may further include an opening portion that opens toward the service port 20 or the view port 30 side, and the chamber 10 and the output portion 212 may communicate through the opening portion. Specifically, the chamber 10 and the output portion 212 are coupled by a coupling portion provided at the edge of the opening.

The coupling part includes at least one selected from the group consisting of a service port coupling member (not shown), a port coupling member (220), a housing coupling part, a coupling part, and a seal, and the chamber 10 and the output part 212 are tightly coupled through the coupling part to block inflow of fluid from the outside.

Fig. 3 is a side cross-sectional view of an ion source according to an embodiment, and fig. 4 is a top partial view of an ion source according to an embodiment.

As shown in fig. 3 and 4, the ion source 210 may include a source body 211 and an output 212.

The output 212 may include an anode electrode 310, a cathode electrode 320, an output housing 330, and the like.

The output housing 330 may have a structure that a side facing the service port 20 or the viewing port 30 is opened and the outside is closed. The output housing 330 may form a space in which the anode electrode 310 and the cathode electrode 320 are mounted, one side of which is opened so as to communicate with the inside space of the chamber in a high vacuum state, and the other side of which is closed.

The output housing 330 may include a housing engagement portion 331 formed side by side with the chamber frame, the housing engagement portion 331 being closely coupled with the chamber frame by the port coupling member 220, thereby preventing the inside of the output housing 330 from directly communicating with the outside space of the chamber. To tightly bond the chamber frame of the housing joint 331, a coupling member 332, such as a bolt, may be applied, and the joint face may be further provided with a seal, such as an O-ring.

The anode electrode 310 and the cathode electrode 320 may be mounted in a space formed in the output housing 330.

The cathode electrode 320 may include a center cathode electrode 322, an edge cathode electrode 324, a cathode electrode coupling portion 326, and the like. The center cathode electrode 322 may be positioned at the center of the opening surface of the output housing 330. The center cathode electrode 322 is located at the center of the opening of the view port 30 when viewed from the side of the view port 30. The edge cathode electrode 324 may be disposed at the edge of the opening surface of the output housing 330. The edge cathode electrode 324 may be formed along an edge of the opening surface of the output housing 330, and when the opening surface is circular, the edge cathode electrode 324 may be in the form of a circular-hollow doughnut.

The center cathode electrode 322 and the edge cathode electrode 324 may be electrically connected by a cathode electrode coupling portion 326 and may have the same potential. The inside of the cathode electrode coupling part 326 or the center cathode electrode 322 or the inside of the edge cathode electrode 324 may be further provided with a magnet. The magnetic field formed by the magnet affects the movement of electrons discharged from the cathode electrode 320, and adjusts the electron transfer direction or the electron transfer speed.

The power supply device is disposed in the source 211, and can apply a specific voltage to the anode electrode 310. Then, an electric field is formed between the anode electrode 310 and the cathode electrode 320 due to this specific voltage, and ions are formed in the inner space of the chamber due to this electric field.

The output 212 may not include a separate cooling device or a separate working gas delivery device. In the conventional art, a separate cooling device coupled to the anode electrode may be attached to cool the anode electrode, but the ion source 210 according to an embodiment uses an atmosphere in a high vacuum state, and thus has less power consumption and less heat generation. In addition, in the conventional art, in order to form ions, another working gas transporting device may be further included, but the ion source 210 according to an embodiment uses an atmosphere in a high vacuum state, and thus ions may be formed without further transporting another working gas.

The cathode electrode 320 includes a first cathode electrode disposed at one side of an edge of the opening opened toward the chamber 10 side, a third cathode electrode disposed at the other side of the edge of the opening, and a second cathode electrode disposed at the center of the opening, and an electrode gap between the anode electrode 310 and the cathode electrode 320 determines an output direction of ions.

The ion source 210 may be combined with ports other than a particular process-adapted port (port). In particular, the ion source 210 may be combined with the service port 20 or the view port 30. The service port 20 and the view port 30 may be disposed at a different height than the target 1. Therefore, it is necessary to adjust the output direction of ions output from the ion source 210.

The electrode spacing may include a first electrode spacing between the anode electrode 310 and the first cathode electrode, a second electrode spacing between the anode electrode 310 and the second cathode electrode, and a third electrode spacing between the anode electrode 310 and the third cathode electrode.

Wherein at least two selected from the first electrode spacing, the second electrode spacing, and the third electrode spacing may be different in length. The output of ions can thus be deflected to the side of the cathode electrode having the shortest electrode pitch among the first electrode pitch, the second electrode pitch, and the third electrode pitch.

The target 1 may be disposed apart from the ion source 210, and the target 1 may be disposed on an extension line on the side of the direction in which the cathode electrode having the shortest electrode pitch among the first electrode pitch, the second electrode pitch, and the third electrode pitch is located.

Preferably, the length of the first electrode gap may be longest and the length of the third electrode gap may be shortest. The output of ions can thus be folded to the side of the direction in which the third cathode electrode is located.

The target 1 may be disposed apart from the ion source 210, and the target 1 may be disposed on an extension line on the side of the direction in which the third cathode electrode is disposed.

The ion forming apparatus 200 may determine an output direction of ions according to the shape of the edge cathode electrode 324.

A part of the peripheral edge of the edge cathode electrode 324 is tapered, and the remaining peripheral edge may have a cylindrical shape with a constant thickness. Specifically, in the conical portion of the edge cathode electrode 324, the peripheral edge in the direction toward the output portion 212 has a constant thickness, and the peripheral edge in the direction toward the chamber 10 is locally thin. Accordingly, ions may be output along the orientation of the conical portion of the edge cathode electrode 324. The degree of ion diffusion can be determined based on the inclination angle of the conical portion of the edge cathode electrode 324.

Also, the edge cathode electrode 324 has a cylindrical shape, and the inner diameter may be larger and larger in a direction toward the chamber 10. Accordingly, the output of ions may be flared due to the shape of the edge cathode electrode 324.

In addition, the edge cathode electrode 324 may be provided with a plurality of coupling grooves along a direction toward the output portion 212.

The output 212 may further include a baffle plate located on one side of the cathode electrode 320 in the direction of ion output to prevent ions from being directed toward the target 1. Specifically, the shutter is positioned on the center cathode electrode 322 in the direction of ion output, diffuses ions, and forms the ions on the entire surface of the target 1.

The barrier plates are connected by a barrier connection so as to be spaced apart from the central cathode electrode 322. The baffle connection portion may include a baffle connection length adjustment portion that can adjust a length so as to control a degree of diffusion of ions. And, the barrier connection part may further include an inclined unit for adjusting an angle of the barrier to control an output direction of the ions. The inclined unit can comprise a hinge shell, a rotary hinge and a fastening unit.

The baffles may be circular, rectangular, conical, and polygonal with at least one slot. At this time, ions may be output in the direction of the grooves.

The ion forming apparatus 200 may further include an ion sensor that may detect the ion concentration at one location in the interior space of the chamber 10. The ion sensor may be disposed in the inner space of the chamber 10 by a support rod extending in the direction of the inner space of the chamber 10.

In addition, the ion forming apparatus 200 may include an adapter for connecting a port of the chamber 10 to the ion source 210. The adapter may include a first connection member coupled with a through hole formed at a port of the chamber, and a second connection member coupled with the output portion 212 exposing the anode electrode 310.

The first connection member may further include a barrier support member so as to provide a barrier along the direction of the inner space of the chamber 10. And, the barrier and the barrier support member may be connected at a distance by a barrier connection portion. Wherein the ion sensor is located on one side of the baffle plate, and can detect the ion concentration in the inner space of the chamber 10.

The monitoring cable is connected with the ion sensor and can be arranged along the baffle connecting part. The ion sensor is connected to an ion source control means located outside the chamber 10 by a monitoring cable which may be disposed through one face of the first connection member of the adapter.

The ion forming apparatus 200 may be controlled by detecting the ion concentration at one location in the inner space of the chamber 10 by an ion sensor disposed in the inner space of the chamber 10, and adjusting the voltage level applied from the source 211 to the anode 310 according to the detected ion concentration, thereby adjusting the amount of ions generated by the ion forming apparatus 200.

When the detected ion concentration is equal to or lower than the reference concentration, the voltage level applied from the source 211 to the anode 310 can be increased to increase the amount of ions generated. Conversely, when the detected ion concentration exceeds the reference concentration, the voltage level supplied from the source 211 to the anode 310 may be restored to the initial value, and the amount of ions generated may be reduced.

Fig. 5 and 6 are views showing the combination of an ion source and a chamber by the adaptor according to the first example, fig. 7 is a sectional view showing the combination of an ion source and a chamber by the adaptor according to the first example, fig. 8 is a structural view of an ion forming apparatus including the adaptor according to the first example, and fig. 9 is a perspective view of the adaptor according to the first example.

As shown in fig. 5-9, the ion forming apparatus 200 and the ion source 210 may be coupled to a port of the chamber 10 through an adapter 227. One port of the chamber 10 may be at least one of the service port 20, the view port 30 and the process port 40, but is not limited thereto.

The ion source 210 is coupled by an adapter 227, and one side of the adapter 227 may be provided with a baffle 340 along the side facing the chamber 10. Accordingly, ions output from the output portion are diffused through the barrier 340, thereby preventing the ions from directly irradiating the target object 1, and are diffused to the entire surface of the target object 1, thereby effectively removing static electricity.

Further, the adapter 227 has a baffle connection portion 341 on one side so that the baffle 340 is disposed apart from the adapter 227, and the baffle 340 and the adapter 227 are connected by the baffle connection portion 341.

The adapter 227 may include a first connection member 228 in communication with a through hole 226 formed at a port of the vacuum-like chamber 10, and a second connection member 229 coupled to the ion source 210 in communication through the through hole 226.

The first connection member 228 may include a through-hole connection member 228a connected to the through-hole 226, an output pipe extension member 228b for extending an output pipe formed in the through-hole connection member 228a, and a port connection member 228c coupled to a port of the chamber 10.

The through-hole connecting member 228a may protrude from the port connecting member 228c or may be formed on the same plane as the port connecting member 228 c.

When the length of the output tube extension member 228b of the adapter 227 is short, the output force is strong due to less collisions between ions or between ions and internal gas molecules. However, when the output tube extension member 228b of the adapter 227 is long in length, the output force is weak due to a large number of ions or ions and internal gas molecules. That is, the output force of the output ions can be adjusted by the length of the output tube extension member 228b of the adapter 227.

The adapter 227 may include a first connection member 228 coupled to a through hole 226 formed at a port of the chamber 10, and a second connection member 229 coupled to the output portion 212 of the exposed anode electrode 310. Wherein chamber 10 is coupled to first connecting member 228 of adapter 227, one of which may be at least one of service port 20, view port 30, and process port 40, but is not so limited.

The through hole 226 is coupled to the first connecting member 228, and has a cross-sectional size different from that of the output portion 212 coupled to the second connecting member 229. For example, the output 212 may be larger or smaller in size than the through hole 226. Therefore, the adapter 227 can be used to tightly bond the through-holes 226 having different cross-sectional sizes to the output portion 212. Thus, the chamber 10 and the ion forming apparatus 200 can be tightly coupled to each other without being modified separately.

The first connection member 228 may include a through-hole connection member 228a connected to the through-hole 226, an output pipe extension member 228b for extending an output pipe formed in the through-hole connection member 228a, and a port connection member 228c coupled to a port of the chamber 10. That is, one port of the chamber 10 may be tightly coupled by the port connection member 228c, and ions may be output to the chamber 10 through the inner spaces of the through-hole connection member 228a and the output pipe extension member 228 b.

The through-hole connecting member 228a is tightly coupled to the through-hole 226, thereby preventing inflow of external fluid, and also improving durability of a coupling portion of the adapter 227 to one end of the chamber 10.

When ions are output, the output direction can be widened or narrowed through the output pipe, so that the output force is adjusted.

In an example, when the diameter of the through hole 226 is smaller than the diameter of the output portion 212, the diameter of the output tube formed by the through hole connecting member 228a of the first connecting member 228 connected to the through hole 226 and the inner space of the output tube extending member 228b may be smaller than the diameter of the output portion 212 in the ion source 210. Therefore, ions output from the output unit 212 are increased in output per unit area due to the through holes smaller than the diameter of the output unit 212.

In another example, when the diameter of the through hole 226 is larger than the diameter of the output portion 212, the diameter of the output pipe formed by the through hole connecting member 228a of the first connecting member 228 connected to the through hole 226 and the inner space of the output pipe extending member 228b may be larger than the diameter of the output portion 212 in the ion source 210. Therefore, the ions output from the output portion 212 are larger than the through holes of the diameter of the output portion 212, and the output per unit area of the ions is reduced and weakened.

Ions are output through the output portion 212 and pass through the channel corresponding to the narrowing of the diameter like the 324 of the edge cathode electrode through the second connection member 229, and pass through the channel narrowed through the first connection member 228. That is, while ions pass through the adaptor 227, the output channel may be gradually narrowed, and the narrower the channel, the stronger the output force of ions becomes. In addition, as described above, the ions can widen the output direction via the output pipe.

The first and second connection members 228 and 229 may be provided with a plurality of holes, such as bolts, for coupling the coupling parts 332. Specifically, in the port connecting member 228c of the first connecting member 228, the edge may be provided with a plurality of holes at a certain interval so as to be connected to a port of the chamber 10. Also, the edge of the second connection member 229 may be provided with a plurality of holes spaced apart from each other so as to be connected to the output portion 212.

The first connecting member 228 may include a first seal of a flexible material disposed opposite the through hole 226, and the second connecting member 229 may include a second seal of a flexible material disposed opposite the output portion 212. Specifically, the port connecting member 228c of the first connecting member 228 may include a first seal of flexible material opposite the through hole 226 to facilitate tight engagement with a port of the chamber 10. The second connection member 229 may include a second seal made of a flexible material disposed opposite the output portion 212 so as to be tightly coupled to the output portion 212. Thus, the ion forming apparatus 200 is tightly coupled to the chamber 10, and prevents inflow of external fluid, thereby maintaining the internal space in a vacuum state.

The first connection member 228 may further include a barrier support member 228d to facilitate the positioning of the barrier 340 along the direction of the inner space of the chamber 10.

The barrier support member 228d may be located at one side of the through-hole connection member 228a and provide a barrier 340. Specifically, the shutter support member 228d may be located at an edge side of the through-hole connection member 228a so as not to obstruct the traveling direction of ions output through the through-hole 226. The barrier support member 228d may be coupled to the barrier coupling portion 341 by welding or tightening a screw. If necessary, the edge of the through-hole connecting member 228a may be provided with a plurality of barrier support members 228d at a certain interval so as to provide a plurality of barriers 340.

The baffle 340 may have a circular shape, a rectangular shape, a conical shape, and a polygonal shape having at least one baffle slot, and may output ions in a direction in which the baffle slot is provided. Specifically, a large amount of ions may be output in a direction in which the baffle 340 is formed and the baffle grooves are provided, and a small amount of ions may be output in a direction in which the baffle grooves are not provided, thereby adjusting the output direction and output force of the ions.

The barrier 340 and the barrier support member 228d may be connected at intervals by a barrier connection 341.

The barrier connection portion 341 may include a barrier connection length adjustment portion capable of adjusting a length so as to control the degree of diffusion of ions. For example, ions may spread wider when the length of the baffle connection is short, and ions may spread narrower when the length of the baffle connection is long.

Specifically, the baffle 340 may be coupled to the ion source 210 through a baffle connection 341. The barrier connection portion 341 may include a barrier connection length adjustment portion that adjusts a length in a sliding manner. The porous barrier 340 may abut against the opening to form a unified body when the length is shortened by the barrier connection length adjustment portion, and the porous barrier 340 may be disposed apart from the ion source 210 when the length is lengthened by the barrier connection length adjustment portion.

Also, a portion of the barrier connection portion 341 connected with the barrier 340 may be configured as a diagonal unit for adjusting the setting angle of the barrier 340. Thereby, the angle of the shutter 340 can be adjusted so that ions are output toward the target 1.

That is, by the arrangement angle of the baffle 340, ions can be output toward the target 1, and at the same time, the ions can be controlled by the baffle 340 not to directly irradiate the target 1 but to diffuse, so that the damage of the target 1 can be prevented, and static electricity generated by the target 1 can be effectively removed.

The degree of ion diffusion, i.e., the output intensity, may be adjusted according to the cross-sectional area of the baffle 340. Specifically, when the cross-sectional area of the baffle 340 is small, the degree of ion diffusion is small, and the output intensity becomes strong. However, when the cross-sectional area of the baffle 340 is large, the degree of ion diffusion is large, and the output intensity is weak.

Fig. 10 is a front side oblique view of the adapter of the second example, fig. 11 is a rear side oblique view of the adapter of the second example, fig. 12 is an enlarged view of the shutter support member of an embodiment, fig. 13 and 14 show ion sources connected to the chamber through the adapter of the second example, and fig. 15 is a view of a port of the chamber to which the adapter of the second example is connected.

As shown in fig. 10 to 15, the adapter 227 may include an output tube extension member 228b that communicates with a through hole 226 formed at one port of the chamber 10, and a second connection member 229 that is coupled to the ion source 210.

The output tube extension member 228b may be inclined so as to adjust the output direction of ions output from the ion source 210. Specifically, the output pipe extension member 228b is connected to the port coupling frame 223 so as to communicate with the chamber 10, and the port coupling frame 223 is directly coupled to a port of the chamber 10. At this time, the output pipe extension member 228b is coupled to the port coupling frame 223 in an inclined shape, whereby the output direction of ions output from the ion source 210 connected to the second connection member 229 can be adjusted.

The output direction of ions output from the ion source 210 is adjusted by the adaptor 227 so that more ions are generated at a specific location in the inner space of the chamber 10. Accordingly, when a specific process that may generate non-uniform static electricity is performed in the chamber 10, the inclination of the output pipe extension member 228b may be adjusted to effectively remove the static electricity.

The output pipe extending member 228b may be inclined in at least one of the upper, lower, left and right directions. The inclination direction of the output pipe extending member 228b may be determined according to the position of the object 1, a specific process performed in the inner space of the chamber 10, and the like.

In addition, the oblique direction of the output tube extending member 228b may be a direction that does not block the position where the see-through window is disposed. For example, as shown in fig. 15, the output pipe extending member 228b may be inclined in at least one of the lower side, the left side, and the right side, or may not be inclined in the upper side direction in which the transparent window is arranged. When the see-through window is disposed on the lower side, the output tube extending member 228b may be inclined in at least one direction of the upper side, the left side, and the right side.

In the output pipe extending member 228b, in order to effectively remove static electricity on the surface of the object 1 in the internal space of the chamber 10, the object 1 may be provided on the extending line of the output pipe extending member 228 b. Thus, static electricity of the target 1 can be effectively removed by the ions output from the ion source 210. In addition, in order to prevent damage caused when ions directly irradiate the surface of the target 1, an ion diffusivity adjustment device may be applied. For example, a baffle plate is provided in the center of the through hole 226 for outputting ions so as not to directly irradiate the target 1 with ions.

In addition, the output force of the ions can be controlled by adjusting the length of the output tube extension member 228 b. Specifically, when the length of the output pipe extending member 228b is short, the output force is strong due to less collisions between ions or between ions and internal gas molecules. However, when the length of the output pipe extending member 228b is long, the output force is weak due to the ion collision or the ion collision with the internal gas molecule. That is, as shown in fig. 13 and 14, the output force of the ions to be output can be adjusted by the length of the output pipe extending member 228 b.

The adapter 227 may further include a baffle support member 228d to facilitate positioning of the baffle toward the interior space of the chamber 10.

The baffle may be positioned in the output direction of the ions to prevent the ions from directly irradiating the target 1. Specifically, the shutter is located in the output direction of ions, and diffuses the ions, thereby forming ions on the entire surface of the target 1.

The baffle is located in the center of the ion output channel, i.e., the through-hole 226, and can effectively control the output direction of ions. Accordingly, the barrier support member 228d may extend in the center portion direction of the through hole 226 so that the barrier is located at the center portion of the through hole 226.

In addition, the shutter support member 228d may include a shutter support length adjustment portion 228e capable of adjusting the shutter position. The shutter can be adjusted by the shutter support length adjustment portion 228e so as to be closer to or farther from the center portion of the through hole 226. Depending on the position of the baffle, the concentration of ions formed in the interior space of the chamber 10 may vary, and thus, the baffle support length adjustment 228e may be applied, with different settings for the position of the baffle depending on the particular process being performed by the chamber 10.

The barrier support member 228d may be fastened to the port coupling frame 223 through a groove formed at one side of the through hole 226. Thereby, the shutter support member 228d is fixed, and the shutter is firmly disposed at the center portion of the through hole 226.

In addition, the output pipe extension member 228b may further include a plurality of barrier support members 228d to facilitate the arrangement of the reading barrier toward the inner space of the chamber 10.

When a specific process performed in the chamber 10 is liable to damage the surface of the object 1 or static electricity generation is small, it is advantageous that the amount of ions formed in the inner space of the chamber 10 is small. Accordingly, a plurality of baffle support members 228d may be provided at the output pipe extension member 228b, whereby a plurality of baffles are provided, thereby reducing the amount of ions formed in the inner space of the chamber 10.

The baffle is located at the center of the ion output channel, i.e., the through-hole 226, to effectively control the output direction of ions. Accordingly, the plurality of barrier support members 228d may extend in the center portion direction of the through-hole 226 so that the barrier is positioned at the center portion of the through-hole 226.

In addition, the viewing port 30 may be provided according to the eye height of the observer so that the observer can visually observe the inner space of the chamber 10. Therefore, the setting position of the view port 30 may be different from the position and the height of the object 1. Therefore, the ion forming apparatus according to an embodiment of the present invention may be provided with ion output direction adjusting means so as to output ions along the direction of the target 1 to which a specific process is applied. Specifically, the ion output direction adjusting means includes a baffle, a beam director, an electrode shape, and the like.

The second connection member 229 may be coupled to the output 212 of the ion source 210.

The second connection member 229 may be provided with a plurality of holes for coupling the coupling parts. Thus, the output 212 of the ion source 210 may be coupled to the adapter 227.

The second connecting member 229 may comprise a flexible material seal disposed opposite the output 212 of the ion source 210. Thus, the ion source 210 can be tightly combined with the chamber 10, and the internal environment of the chamber 10 and the ion source 210 can be maintained.

In addition, the port coupling member 220 maintains a conventional function of providing information obtained by visual observation through the first region 221 provided with the perspective window, while providing other functions of combining with other devices through the second region 222 provided with the through hole 226.

The port coupling member 220 may further include a port coupling frame 223, and the port coupling frame 223 may fasten the first region 221 and the second region 222 to the chamber 10.

The modification of the chamber 10 can be minimized by the port coupling frame 223 without replacing the chamber 10 and adding other devices.

In addition, the port coupling frame 223 may be provided in a size equal to or larger than the view port 30 so as to be closely coupled with the view port 30. Also, the port coupling frame 223 includes both the first region 221 and the second region 222, so that the first region 221 and the second region 222 are fastened to the chamber 10 at the same time.

Also, the perspective window may have a rounded shape so as to be closely coupled with the first region 221. The corners of the perspective window are rounded to effectively couple the coupling member and the sealing member, and the perspective window is closely coupled to the first region 221 to prevent inflow of external fluid, so that the inner space of the chamber 10 is maintained in a vacuum state.

The perspective window may be formed of a highly durable material to maintain a vacuum in the interior of the chamber 10 and also to prevent the conditions of a particular process from being changed by the external environment. In particular, the transparent window may include at least one selected from the group consisting of ceramic, industrial diamond, quartz, and industrial sapphire, and preferably, the transparent window may include ceramic.

The first region 221 may include a perspective window coupling frame 225 to facilitate securing the perspective window to the chamber 10. The perspective window coupling frame 225 may be coupled to one side of the port coupling frame 223 such that the perspective window is fastened to the chamber 10.

Specifically, the port coupling frame 223 is coupled in direct contact with the chamber 10, and the perspective window coupling frame 225 may be coupled with the port coupling frame 223 so as to be disposed along a direction in which other devices coupled by the port coupling member 220 are located. Thereby, retrofitting of the chamber 10 may be minimized or even not replacing the chamber 10. Other devices to which port coupling member 220 is coupled may include ion forming device 200, among others.

The second region 222 may be connected to other devices in the chamber 10 through the viewing port 30. Other means typically associated with chamber 10 may control the conditions of the particular process being performed in the interior space of chamber 10.

The second region 222 may include an adapter 227 for coupling the ion source 210 to the through-hole 226. The adapter 227 may tightly couple other devices coupled through the second region 222 to the chamber 10. Specifically, the adapter 227 is not only the chamber 10, but other devices that would be joined by the second region 222 are tightly joined to one another without further modification.

The view port 30 is described above with emphasis, but the present invention is not limited thereto, and the techniques disclosed in the present invention can be applied to any port provided in the chamber 10 such as the service port 20 and the process port 40.

Fig. 16 is an overhead view of an ion forming system according to an embodiment, and fig. 17 is a side view of an ion forming system according to an embodiment.

As shown in fig. 16 and 17, one embodiment of an ion formation system 400 may include a plurality of ion sources 210a, 210b that form ions within a chamber 10, and a plurality of adapters 227-1, 227-2 that communicate the plurality of ion sources 210a, 210b with the chamber 10.

Specifically, to effectively remove static electricity generated by a particular process within the chamber 10, multiple ion sources 210a, 210b may be employed, and to place multiple ion sources 210a, 210b in communication with the chamber 10, multiple adapters 227-1, 227-2 may be employed.

The adapter 227 may include an output tube extension member 228b connected to the port coupling frame 223 and a second connection member 229 coupled to the output 212 of the ion source 210.

The output tube extension member 228b may be connected to the port coupling frame 223 in an inclined manner so as to adjust the output direction of ions. The output direction of the ions can be adjusted so that more ions are generated at a specific location in the interior space of the chamber 10. Accordingly, when a specific process that may generate non-uniform static electricity is performed in the chamber 10, the inclination of the output pipe extension member 228b may be adjusted to effectively remove the static electricity.

The output pipe extension member 228b is connected to the port coupling frame 223, which may be inclined toward at least one of the upper side, the lower side, the left side, and the right side. The inclination direction of the output pipe extending member 228b may be determined according to the position of the object 1, a specific process performed in the inner space of the chamber 10, and the like.

Also, the output tube extension members 228b of the plurality of ion sources 210a, 210b may be inclined in different directions, thereby more easily adjusting the concentration deviation of ions generated in the inner space of the chamber 10.

For example, as shown in fig. 16 and 17, the plurality of ion sources 210a, 210b are arranged with the output tube extending member 228b being tilted to collect ions generated in a specific region of the inner space of the chamber 10, thereby effectively removing a large amount of static electricity generated in the specific region of the inner space of the chamber 10. Conversely, the output tube extension members 228b of the plurality of ion sources 210a, 210b may be tilted toward different regions so that a particular region of the interior space of the chamber 10 generates less ions.

In addition, the length of the output tube extension member 228b may be adjusted to control the output force of ions. Specifically, when the length of the output pipe extending member 228b is short, the output force is strong due to less collisions between ions or between ions and internal gas molecules. However, when the length of the output pipe extending member 228b is long, the output force is weak due to the ion collision or the ion collision with the internal gas molecule. That is, as shown in fig. 13 and 14, the output force of the ions to be output can be adjusted by the length of the output pipe extending member 228 b.

The output pipe extending member 228b may further include a baffle support member 228d to facilitate the arrangement of baffles along the direction of the inner space of the chamber 10.

The baffle is positioned in the direction of ion output, so that the ions can be prevented from directly irradiating the target object 1. Specifically, the shutter is located in the output direction of ions, and diffuses the ions, thereby forming ions on the entire surface of the target 1.

In the above, unless specifically stated to the contrary, the terms "comprising," "comprising," or "having" and the like are intended to encompass the element, and should be interpreted as excluding the other element, but rather as further including the other element. Unless defined otherwise, all terms including technical or scientific terms have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Conventional terms, such as dictionary-defined terms, should be construed to have meanings consistent with the relevant technical literature, and should not be construed as excessively idealized or formalized meanings unless explicitly defined herein.

The foregoing is merely illustrative of the technical idea of the present invention, and various modifications and variations can be made by those skilled in the art to which the present invention pertains without departing from its essential characteristics. Accordingly, the embodiments disclosed herein are for the purpose of description and not for the purpose of limiting the technical ideas of the present invention, the scope of which is not limited by such embodiments. The scope of the present invention should be construed in accordance with the following claims, and all technical ideas within the same scope as the present invention should be construed to be included in the scope of the claims.

Claims

1. An adapter-coupled ion forming device, characterized in that:

include:

An ion source, wherein an output portion thereof is connected to the chamber through a through hole, and ions are generated between the anode electrode and the cathode electrode by a voltage supplied from a source body to the anode electrode of the output portion, thereby forming ions in the internal space of the chamber, and removing static electricity on the surface of the target object by the formed ions; and

The adapter includes a first connecting member and a second connecting member. The first connecting member is connected to a through hole formed at a port of a vacuum chamber, and the second connecting member is combined with the ion source connected through the through hole.

2. The adapter-coupled ion forming device according to claim 1 is characterized in that: the first connecting component includes: a through hole connecting component, which is connected to the through hole; an output tube extension component, which is used to extend the output tube formed in the through hole connecting component; and a port connecting component, which is combined with a port of the chamber.

3. The adapter-coupled ion forming device according to claim 2 is characterized in that when the ions are output from the output tube, the output strength can be adjusted by widening or narrowing the output direction.

4. The adapter-coupled ion forming device according to claim 2, wherein the output tube extension member is inclined to facilitate adjustment of the output direction of the ions.

5. The adapter-coupled ion forming device according to claim 4, wherein the output tube extension member can be tilted toward at least one direction of the upper side, the lower side, the left side and the right side.

6. The adapter-coupled ion forming device according to claim 2, wherein the output strength of the ions is controlled by adjusting the length of the output tube extension member.

7. The adapter-coupled ion forming device according to claim 2 is characterized in that: the first connecting member further includes a baffle supporting member to facilitate setting the baffle toward the internal space direction of the chamber, and the baffle supporting member extends toward the center of the through hole.

8 . The adapter-coupled ion forming device according to claim 7 , wherein the baffle support member comprises a baffle support length adjustment portion for adjusting the position of the baffle.

9. The adapter-coupled ion forming device according to claim 7, wherein the first connecting member further comprises a plurality of baffle support members so as to arrange a plurality of baffles toward the inner space of the chamber.

10. The adapter-coupled ion forming device according to claim 1, characterized in that the second connecting member can be combined with a device having a cross-sectional area different from the cross-sectional area of the through hole.