CN119965137B - Method and apparatus for manufacturing semiconductor device - Google Patents
Method and apparatus for manufacturing semiconductor deviceInfo
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- CN119965137B CN119965137B CN202510431513.6A CN202510431513A CN119965137B CN 119965137 B CN119965137 B CN 119965137B CN 202510431513 A CN202510431513 A CN 202510431513A CN 119965137 B CN119965137 B CN 119965137B
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Abstract
The present disclosure provides a method of manufacturing a semiconductor device and an apparatus for manufacturing a semiconductor device. The manufacturing method of the semiconductor device comprises the steps of arranging a workpiece to be etched on an electrostatic chuck located in an etching chamber, etching the workpiece to be etched, and applying at least one forward voltage and at least one reverse voltage with the polarity opposite to that of the forward voltage to a carrier in the electrostatic chuck in the process of etching the workpiece to be etched. The preparation method can remove solid particles attached to the surface of the workpiece to be etched, so that the yield of the prepared semiconductor device is improved.
Description
Technical Field
The present invention relates to the field of semiconductor technology, and in particular, to a method and an apparatus for manufacturing a semiconductor device.
Background
A plurality of etching processes are generally required in the production process of the semiconductor device. In the etching process, plasma, chemical reagent or the like is adopted to etch the film structure on the surface of the workpiece, and solid particles including reaction products and the like generated in the etching process are pumped into the reaction chamber by a vacuum pump. However, in the actual preparation process, it is difficult for the vacuum pump to completely remove all the solid particles, and there is often a part of the solid particles adsorbed on the surface of the workpiece. This can affect the subsequent deposition process of the film, leading to quality problems with the film and ultimately device yield.
Disclosure of Invention
In view of the foregoing, it is desirable to provide a method for manufacturing a semiconductor device capable of removing solid particles adhering to the surface of a workpiece to be etched, thereby improving the yield of the manufactured semiconductor device.
According to some embodiments of the present disclosure, there is provided a method of manufacturing a semiconductor device, including the steps of:
Setting a workpiece to be etched on an electrostatic chuck, and sequentially performing a first etching procedure, a transition procedure and a second etching procedure on the workpiece to be etched;
And synchronously carrying out one or more particle removing treatments on the electrostatic chuck in the transition procedure, wherein the particle removing treatments comprise the steps of applying a forward voltage and a reverse voltage with the polarity opposite to that of the forward voltage to the electrostatic chuck, and regulating the voltage value of the forward voltage and the voltage value of the reverse voltage according to the air pressure in an etching chamber in the particle removing treatment.
In some embodiments of the present disclosure, in the transition process, the gas pressure in the etching chamber is gradually changed with time, and the voltage value of the forward voltage and the voltage value of the reverse voltage are gradually changed with the change of the gas pressure.
In some embodiments of the present disclosure, during the particle removal process, the voltage value of the forward voltage is in a linear relationship with the gas pressure within the etch chamber, and the voltage value of the reverse voltage is in a linear relationship with the gas pressure within the etch chamber.
In some embodiments of the present disclosure, the voltage value of the forward voltage and the voltage value of the reverse voltage both satisfy the relationship v=k×p+c with the gas pressure in the etching chamber, where V is the voltage value of the forward voltage or the voltage value of the reverse voltage, P is the gas pressure in the etching chamber, and k and c are constants.
In some embodiments of the present disclosure, the voltage value of the forward voltage is equal to the voltage value of the reverse voltage during a single particle removal process.
In some embodiments of the present disclosure, the duration of applying the forward voltage and the duration of applying the reverse voltage are equal during a single particle removal process.
In some embodiments of the present disclosure, the particle removal treatment is performed a plurality of times, the plurality of times the particle removal treatment is performed continuously during the transition procedure.
In some embodiments of the present disclosure, the forward voltage and the reverse voltage are alternately applied during a plurality of the particle removal processes.
In some embodiments of the present disclosure, a dc-dc converter is provided in a circuit structure coupled with the electrostatic chuck, the dc-dc converter for converting a polarity and a voltage value of a voltage applied to the electrostatic chuck;
when a reverse voltage is applied to the electrostatic chuck, the polarity of the voltage applied to the electrostatic chuck is changed by the DC-DC converter.
Further, the present disclosure also provides an apparatus for manufacturing a semiconductor device, which includes an etching chamber, an electrostatic chuck, a circuit structure, and a vacuum pump;
the vacuum pump is used for pumping gas in the etching chamber;
The electrostatic chuck is disposed in the etching chamber, the electrostatic chuck is coupled to the circuit structure, a dc-dc converter is disposed in the circuit structure, the dc-dc converter is configured to change a polarity of a voltage applied to the electrostatic chuck, and the dc-dc converter is configured to regulate a voltage value of the applied voltage according to a gas pressure in the etching chamber.
In at least one embodiment of the present disclosure, the electrostatic chuck is subjected to one or more particle removal processes simultaneously in a transition process, the particle removal process including applying a forward voltage and a reverse voltage to the electrostatic chuck. The forward voltage is used for polarizing the surface of the workpiece to be etched, and the workpiece to be etched can be adsorbed on the electrostatic chuck due to the principle of opposite attraction of coulomb law, and the polarity of the particle surface is opposite to that of the electrostatic chuck. The applied reverse voltage is used to change the polarity of the electrostatic chuck, which is the same as the polarity of the particles, which generates a repulsive force to the particles. The repulsive force can drive the particles away from the electrostatic chuck and can be easily pumped by a vacuum pump. Further, the voltage value of the forward voltage and the voltage value of the reverse voltage are regulated and controlled according to the air pressure in the etching chamber, so that the coulomb force of the electrostatic chuck and the suction speed of the vacuum pump are matched with each other at the same frequency, and the stable particle removing capability is maintained in the transition procedure, so that the particle amount adsorbed on the surface of the workpiece is further reduced. Therefore, the preparation method can remove solid particles attached to the surface of the workpiece to be etched, thereby improving the yield of the prepared semiconductor device.
The foregoing description is only an overview of the present invention, and is intended to provide a better understanding of the present invention, as it is embodied in the following description, with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and that other embodiments of the drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural view of a manufacturing apparatus of a semiconductor device;
FIG. 2 is a graph showing the pressure of the etching chamber over time during the transition process;
fig. 3 is a graph showing a change in voltage curve applied to the electrostatic chuck corresponding to fig. 2.
Wherein, each reference sign and meaning are as follows:
110. The device comprises a carrier, 120 parts of an electrostatic chuck, 130 parts of a direct current-direct current converter, 210 parts of an etching chamber, 220 parts of a workpiece to be etched, 230 parts of a vacuum pump, 240 parts of an air duct.
Detailed Description
To facilitate an understanding of this document, a more complete description of this document will follow. Preferred embodiments herein are presented. This may be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description presented herein is for the purpose of describing particular embodiments only and is not intended to be limiting.
It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent, connected, or coupled to the other element or layer, or intervening elements or layers may also be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section.
Spatially relative terms, such as "under", "below", "beneath", "under", "above", "over" and the like, may be used herein for ease of description to describe one element or feature's relationship to another element or feature. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation. For example, if the device in the figures is turned over, elements or features described as "under" or "beneath" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "below" and "under" may include both an upper and a lower orientation. The device may be otherwise oriented (e.g., rotated 90 degrees or other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
The electrostatic chuck refers to a device for fixing and supporting a workpiece to be etched by an electrostatic adsorption principle. In use, the power supply applies a voltage to the electrostatic chuck to generate an electrostatic field. The electrostatic field enables the surface of the workpiece to be etched to generate induction charges with opposite polarities, and the workpiece to be etched can be stably adsorbed and fixed on the electrostatic chuck due to mutual attraction of heterogeneous charges. In conventional etching processes, the polarity of the voltage applied to the electrostatic chuck is typically constant to ensure stability of the workpiece to be etched. During the research of the present disclosure, it was found that plasma is generally required for etching. In the actual etching process, tiny particles in the etching chamber are charged under the influence of a radio frequency power supply, so that the particles can be suspended in plasma in the etching process. However, there is a transition step before one etching stage is completed and the next etching stage is started, at which time the gas pressure in the etching chamber is changed, the rf power supply stops working, and the particles fall onto the workpiece to be etched under the influence of gravity and are attracted by the electrostatic chuck polarization. The falling particles are difficult to re-suspend in the plasma from the workpiece to be etched.
The invention provides a manufacturing method of a semiconductor device capable of reducing particles attached to a workpiece to be etched, which comprises the steps of arranging the workpiece to be etched on an electrostatic chuck, sequentially carrying out a first etching process, a transition process and a second etching process on the workpiece to be etched, and synchronously carrying out one or more particle removal processes on the electrostatic chuck in the transition process, wherein the particle removal process comprises the steps of applying a forward voltage and a reverse voltage with the polarity opposite to that of the forward voltage to the electrostatic chuck, and regulating the voltage value of the forward voltage and the voltage value of the reverse voltage according to the air pressure in an etching chamber in the particle removal process.
It will be appreciated that the forward voltage applied to the electrostatic chuck in this embodiment is used to cause the workpiece to be etched to be attracted to the electrostatic chuck, while the reverse voltage is of opposite polarity to the forward voltage. The designations of "forward voltage" and "reverse voltage" in this embodiment are primarily used to distinguish between the two in polarity and are not used to define the direction of current applied by the power supply or the particular polarity of the electrostatic chuck.
In this embodiment, the electrostatic chuck is subjected to one or more particle removal processes simultaneously in a transition process, the particle removal process including applying a forward voltage and a reverse voltage to the electrostatic chuck. The forward voltage is used for polarizing the surface of the workpiece to be etched, and the workpiece to be etched can be adsorbed on the electrostatic chuck due to the principle of opposite attraction of coulomb law, and the polarity of the particle surface is opposite to that of the electrostatic chuck. The applied reverse voltage is used to change the polarity of the electrostatic chuck, which is the same as the polarity of the particles, which generates a repulsive force to the particles. The repulsive force can drive the particles away from the electrostatic chuck and can be easily pumped by a vacuum pump. Further, the voltage value of the forward voltage and the voltage value of the reverse voltage are regulated and controlled according to the air pressure in the etching chamber, so that the coulomb force of the electrostatic chuck and the suction speed of the vacuum pump are matched with each other at the same frequency, and the stable particle removing capability is maintained in the transition procedure, so that the particle amount adsorbed on the surface of the workpiece is further reduced. Therefore, the preparation method can remove solid particles attached to the surface of the workpiece to be etched, thereby improving the yield of the prepared semiconductor device.
The present disclosure also provides a manufacturing apparatus for a semiconductor device for implementing the manufacturing method. In order to facilitate understanding, the structure of the apparatus for manufacturing a semiconductor device will be described below. Fig. 1 is a schematic structural view of a manufacturing apparatus of a semiconductor device. Referring to fig. 1, the apparatus for manufacturing a semiconductor device includes an etching chamber 210, an electrostatic chuck 120, a circuit structure, and a vacuum pump 230. Wherein the vacuum pump 230 is used to pump the gases in the etch chamber 210. An electrostatic chuck 120 is disposed in the etch chamber 210, the electrostatic chuck 120 being coupled to the circuit structure. The circuit structure is used to apply a voltage to the electrostatic chuck 120 such that the electrostatic chuck 120 has a specific polarity.
Referring to fig. 1, as some examples of this embodiment, a vacuum pump 230 may be connected to the interior of the etching chamber 210 through an air duct 240, and the vacuum pump 230 may be capable of pumping the gas in the etching chamber 210 through the air duct 240.
Referring to fig. 1, in this embodiment, an electrostatic chuck 120 is used to carry a workpiece 220 to be etched positioned in an etching chamber 210. The carrier 110 is disposed at one side of the electrostatic chuck 120. Specifically, the electrostatic chuck 120 has a carrying surface for carrying the workpiece 220 to be etched and a back surface opposite to the carrying surface, and the stage 110 may be disposed on a side of the back surface of the electrostatic chuck 120 away from the carrying surface. The stage 110 is electrically connected to a circuit structure, in which a dc-dc converter 130 is disposed, the dc-dc converter 130 is configured to change a polarity of a voltage applied to the electrostatic chuck 120, and the dc-dc converter 130 is configured to regulate a voltage value of the applied voltage according to a gas pressure in the etching chamber 210. It will be appreciated that the circuit arrangement may be electrically connected to an external power source. A control module (not shown) may be provided for regulating the voltage value of the applied voltage according to the gas pressure in the etching chamber 210. The control module may include a programmable logic controller and a processor with a built-in program to regulate the voltage value of the voltage applied by the dc-dc converter 130. The control module may also include other devices, such as a pressure sensor for measuring the pressure within the etch chamber 210.
In the embodiment of the present disclosure, by providing the dc-dc converter 130, the polarity of the voltage applied to the electrostatic chuck 120 can be changed during use, and both a forward voltage and a reverse voltage can be applied to the electrostatic chuck 120. The semiconductor device manufacturing apparatus can be used to implement the semiconductor device manufacturing method of the present disclosure.
The manufacturing method of the semiconductor device of the embodiment of the present disclosure includes a process of etching the workpiece 220 to be etched, and as some examples of this embodiment, the manufacturing method of the semiconductor device is performed using the manufacturing apparatus of the embodiment described above. In one embodiment, the method includes disposing a workpiece 220 to be etched on an electrostatic chuck 120, sequentially performing a first etching process, a transition process, and a second etching process on the workpiece to be etched, and performing one or more particle removal processes on the electrostatic chuck simultaneously during the transition process, the particle removal processes including applying a forward voltage and a reverse voltage having a polarity opposite to that of the forward voltage to the electrostatic chuck 120, and adjusting a voltage value of the forward voltage and a voltage value of the reverse voltage according to an air pressure in an etching chamber 210 during the particle removal processes.
As some examples of this embodiment, the workpiece 220 to be etched may include a wafer and a film layer to be etched on the wafer. The material of the film layer to be etched may include at least one of silicon nitride, silicon oxide, and titanium nitride. The material of the film to be etched may also include, but not limited to, photoresist material, hard mask material, and the like.
As some examples of this embodiment, the film to be etched has one or more layers. The first etching process and the second etching process can be performed on the same layer of film to be etched sequentially, or can be performed on two layers of film to be etched sequentially. In this embodiment, the film to be etched has two layers, i.e., a silicon nitride layer and a silicon oxide layer, respectively, the first etching process is directed to etching the silicon nitride layer, and the second etching process is directed to etching the silicon oxide layer.
As some examples of this embodiment, in the manufacturing method, the manner of etching in the first etching process and the second etching process may be dry etching, that is, etching the workpiece 220 to be etched using plasma.
As some examples of this embodiment, during the first etching process, the transition process, and the second etching process of the workpiece 220 to be etched, the vacuum pump 230 may be used to pump air into the etching chamber 210 to maintain or change the air pressure within the etching chamber 210.
In this example, the gas pressure in the etching chamber 210 may be controlled to be 150pa to 2000pa during the first etching process, the transition process, and the second etching process for the workpiece 220 to be etched. It will be appreciated that the gas pressure within the etch chamber 210 may be adjusted accordingly for specific needs during different etch phases or when etching different materials.
In this embodiment, the gas pressure within the etch chamber 210 is gradually changed over time during a transition process between the first etch process and the second etch process. As some examples of this embodiment, the gas pressure of the etching chamber 210 required in the first etching process is different from the gas pressure of the etching chamber 210 required in the second etching process, and the gas pressure of the etching chamber 210 is gradually adjusted from the gas pressure required in the first etching process to the gas pressure required in the second etching process during the transition process.
As some examples of this embodiment, the voltage value of the forward voltage and the voltage value of the reverse voltage are gradually changed with the change of the air pressure, with the purpose of avoiding dropping of particles in the transition process and enabling the particles to be pumped by the vacuum pump in time.
As some examples of this embodiment, the step of regulating the voltage value of the forward voltage and the voltage value of the reverse voltage according to the gas pressure in the etching chamber 210 includes controlling the voltage value of the forward voltage and the voltage value of the reverse voltage during the particle removal process to be larger when the gas pressure in the etching chamber 210 is larger, and controlling the voltage value of the forward voltage and the voltage value of the reverse voltage during the particle removal process to be smaller when the gas pressure in the etching chamber 210 is smaller.
In this example, when the air pressure in the etching chamber 210 is smaller, the pumping speed of the vacuum pump 230 is faster, and at this time, a smaller voltage value is applied to the electrostatic chuck 120 to reduce the coulomb force of the particles on the surface of the electrostatic chuck 120, which is more beneficial to sufficiently removing the particles, and when the air pressure in the etching chamber 210 is larger, the pumping speed of the vacuum pump 230 is slower, and at this time, a larger voltage value is applied to the electrostatic chuck 120 to increase the coulomb force of the particles on the surface of the electrostatic chuck 120, which is more beneficial to sufficiently removing the particles. The voltage value is regulated and controlled by adopting the mode, so that the removal capability of particles in the transition process is further improved.
As some examples of this embodiment, the voltage value of the forward voltage is linearly related to the gas pressure within the etch chamber 210 and the voltage value of the reverse voltage is linearly related to the gas pressure within the etch chamber 210 during the particle removal process. Setting the applied voltage value in a linear relationship with the gas pressure in the etching chamber 210 can make the particle removal capability more stable in the whole etching process.
As some examples of this embodiment, the voltage value of the forward voltage and the voltage value of the reverse voltage both satisfy the relationship v=kxp+c with the gas pressure in the etching chamber, where V is the voltage value of the forward voltage or the voltage value of the reverse voltage, P is the gas pressure in the etching chamber, and k and c are constants.
In an actual transition process, the gas pressure within the etch chamber 210 may be intermittently varied or approximately considered to be intermittently varied. Wherein an intermittent change refers to the gas pressure within the etch chamber 210 being maintained constant or approximately constant for some short period of time (e.g., within 1 s), and the gas pressure transitioning between adjacent periods of time. At this time, the particle removal process may be performed simultaneously corresponding to the time periods, i.e., one particle removal process per time period, and a plurality of particle removal processes are performed on the electrostatic chuck 120 throughout the transition process.
It can be appreciated that in the process of performing each particle removal process, the forward voltage is applied to ensure that the workpiece 220 to be etched is stably disposed on the electrostatic chuck 120, and the reverse voltage is applied to generate a repulsive force on the particles attached to the electrostatic chuck 120, so that the particles are separated from the surface of the workpiece 220 to be etched and pumped away by the vacuum pump 230.
It will be appreciated that in this embodiment, the polarity and/or magnitude of the voltage may be adjusted as the applied voltage is changed. The adjustment may be done instantaneously, i.e. the polarity may be adjusted instantaneously after one forward or reverse voltage is applied and/or immediately after one reverse or forward voltage is applied.
As some examples of this embodiment, each application of a reverse voltage to the stage 110 is followed by a forward voltage. Wherein, the application of the forward voltage is followed by the application of the reverse voltage, which means that there is no break between the application of the forward voltage and the application of the reverse voltage. For example, the forward voltage applied to the stage 110 may be terminated instantaneously, and the reverse voltage applied to the stage 110 may be started at the same time.
In a typical circuit configuration of the electrostatic chuck 120, only a forward voltage can be applied to the electrostatic chuck 120. Corresponding to the change of the manner of applying the voltage, as some examples of this embodiment, a dc-dc converter 130 is provided in the circuit structure of the electrostatic chuck 120, and the dc-dc converter 130 is used to convert the polarity and the voltage value of the voltage applied to the stage 110. In this embodiment, when a reverse voltage is applied to the stage 110, the polarity of the voltage applied to the stage 110 is changed by the dc-dc converter 130. The dc-dc converter 130 can adjust the forward voltage applied by the original circuit structure to be converted into the reverse voltage, thereby instantaneously completing the change of the polarity of the applied voltage. By providing the dc-dc converter 130, the manufacturing method of the semiconductor device can be realized without significantly modifying existing equipment.
In this embodiment, the voltage value of the single application may be kept fixed during the primary particle removal process, i.e., the voltage value of the single application forward voltage is kept constant, and the voltage value of the single application reverse voltage is also kept constant. Or in other embodiments, the voltage value of the single applied forward voltage or reverse voltage may also be varied during the primary particle removal process.
As some examples of this embodiment, the voltage value of the applied forward voltage is equal to the voltage value of the applied reverse voltage during the single particle removal process. Controlling the voltage value of the forward voltage to be equal to the voltage value of the reverse voltage is beneficial to ensuring that particles of different charged types can be removed more fully.
As some examples of this embodiment, the duration of the forward voltage and the duration of the reverse voltage applied are equal during a single particle removal process. Controlling the duration of the application of the forward voltage to be equal to the duration of the application of the reverse voltage is advantageous in ensuring that particles of different charged species are removed more fully.
As some examples of this embodiment, the number of particle removal treatments is a plurality of times, the plurality of particle removal treatments being performed continuously during the transition process.
As some examples of this embodiment, a forward voltage and a reverse voltage may be alternately applied to the stage 110 during the transition process. For example, after each forward voltage application, a reverse voltage is applied, then the next forward voltage is applied, and so on. The alternating application of the forward voltage and the reverse voltage to the carrier 110 is beneficial to improving the probability of removing particles adsorbed by the workpiece 220 to be etched and improving the yield of the prepared semiconductor device while ensuring the stable arrangement of the workpiece 220 to be etched.
The present disclosure also provides a specific implementation of the above embodiments to specifically illustrate the manner in which the voltage value applied is set according to the gas pressure within the etch chamber 210.
As some examples of this embodiment, the reverse voltage applied to the stage 110 has a voltage value of 300v to 1000v. Where the voltage value refers to the absolute value of the voltage, i.e. the voltage value irrespective of the direction of the current. The reverse voltage is controlled to 300V-1000V, so that a proper repulsive force can be generated, and particles can be effectively removed while the stable placement of the workpiece 220 to be etched is ensured.
Further, in this example, the voltage value of the reverse voltage applied to the stage 110 may be 300V, 400V, 500V, 600V, 700V, 800V, 900V, 1000V, or the voltage value of the reverse voltage may also be in a range between any two of the above-described voltage values.
Fig. 2 is a schematic diagram showing a variation of gas pressure with time during a transition process in a manufacturing method of a semiconductor device, wherein an abscissa represents time and an ordinate represents gas pressure in the etching chamber 210. Referring to fig. 2, a first particle removal process is performed between time t 0 and time t 1, in which the gas pressure within the etch chamber 210 may be considered to be P 1. Then, a second particle removal process is performed between time t 1 and time t 2, in which the gas pressure within the etch chamber 210 may be considered to be P 2. Then, a third particle removal process is performed between time t 2 and time t 3, in which the gas pressure in the etching chamber 210 can be considered as P 3. Then, a fourth particle removal process is performed between time t 3 and time t 4, in which the gas pressure in the etching chamber 210 can be considered as P 4. Then, a fifth particle removal process is performed between time t 4 and time t 5, in which the gas pressure in the etching chamber 210 can be considered as P 5. Then, a sixth particle removal process is performed between time t 5 and time t 6, in which the gas pressure within the etch chamber 210 may be considered P 6.
In the case shown in fig. 2, the gas pressure in the etching chamber 210 gradually decreases, i.e., P 1＞P2＞P3＞P4＞P5, in the first to fifth particle removal processes, and the gas pressure in the etching chamber 210 increases, i.e., P 5＜P6, in the fifth to sixth particle removal processes.
Fig. 3 is a schematic diagram illustrating a voltage curve applied to the stage 110 corresponding to fig. 2. referring to fig. 3, during the first particle removal process, the forward voltage of voltage V 1 is applied to the stage 110 at time t 0 until the middle of the first particle removal process, that is, (t 1-t0)/2, and then the polarity of the voltage is changed, and the reverse voltage of voltage V 1 is applied to the stage 110 until the first particle removal process is completed. In the course of the second particle removal process, a forward voltage of voltage V 2 is applied to the stage 110 at time t 1 until the middle of the second particle removal process, then the polarity of the voltage is switched, and a reverse voltage of voltage V 2 is applied to the stage 110 until the second particle removal process is completed. In this way, during the sixth particle removal process, the forward voltage with the voltage value V 6 is applied to the stage 110 at time t 5 until the middle of the sixth particle removal process, then the polarity of the voltage is changed, and the reverse voltage with the voltage value V 6 is applied to the stage 110 until the sixth particle removal process is completed. It will be appreciated that in fig. 3, V 1 represents a forward voltage of voltage V 1 applied and-V 1 represents a reverse voltage of voltage V 1 applied.
Referring to fig. 3, during the first particle removal process, i.e., the period from t 0 to t 1, a forward voltage is applied during the first half of the period, and the workpiece 220 to be etched is attracted to the electrostatic chuck 120, and the particles on the surface of the workpiece 220 to be etched are also attracted. If the surface of the stage 110 near the workpiece 220 to be etched is positively charged, the surface of the particles is negatively charged. Then, a reverse voltage is applied to the stage 110 in the latter half period, at this time, the surface of the stage 110, which is close to the workpiece 220 to be etched, is negatively charged, so that an instant repulsive force can be generated on the particles with the negatively charged surface, so that the particles move away from the workpiece 220 to be etched, and at this time, the particles can be pumped away along with the air flow in the etching chamber 210. At the same time of starting the second particle removal process, the carrier 110 is applied with a forward voltage and a reverse voltage, and the voltage value is adjusted according to the change of the air pressure, so that the particle removal capability in the adjacent two particle removal processes is stable, and the particles on the surface of the second workpiece 220 to be etched are sufficiently removed. By analogy, by applying a forward voltage and a reverse voltage during each particle removal process, particles that fall between etching stages can be removed more effectively.
Further, referring to fig. 3, in correspondence with the variation law of the air pressure values in fig. 2, the voltage values of the forward voltage and the reverse voltage applied to the stage 110 gradually decrease, i.e., V 1＞V2＞V3＞V4＞V5, during the first to fifth particle removal processes, and the voltage values of the forward voltage and the reverse voltage applied to the stage 110 increase, i.e., V 5＜V6, during the fifth to sixth particle removal processes. That is, the voltage value applied to the stage 110 is also large during the particle removal process with a large air pressure. This is advantageous in maintaining a relatively stable particle removal capacity throughout the transition process.
In this embodiment, during the actual etching process, the dc-dc converter 130 may be correspondingly programmed according to the time-varying process of the air pressure in the etching chamber 210, so that the voltage applied to the stage 110 varies according to the air pressure.
Note that the above embodiments are for illustrative purposes only and are not meant to be limiting herein.
It should be understood that the steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least a portion of the steps in the preparation process may include a plurality of sub-steps or stages, which are not necessarily performed at the same time, may be performed at different times, may not necessarily be performed sequentially, and may be performed alternately or alternately with at least a portion of the sub-steps or stages of other steps or other steps.
In this specification, each embodiment is described in a progressive manner, and each embodiment is mainly described by differences from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
Claims (9)
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| CN114467164A (en) * | 2019-09-12 | 2022-05-10 | 应用材料公司 | Repellent web and deposition method |
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| JP2004266028A (en) * | 2003-02-28 | 2004-09-24 | Tokyo Electron Ltd | Apparatus, method, and system for gas treating |
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| JP7122864B2 (en) * | 2018-05-14 | 2022-08-22 | 東京エレクトロン株式会社 | CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS |
| CN113948359B (en) * | 2020-07-17 | 2024-04-19 | 中国科学院微电子研究所 | Electrostatic chuck and semiconductor processing equipment |
| KR102781195B1 (en) * | 2023-10-20 | 2025-03-12 | 장동준 | Cleaning wafer adsorbing particles attached to the chuck |
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| US5779807A (en) * | 1996-10-29 | 1998-07-14 | Applied Materials, Inc. | Method and apparatus for removing particulates from semiconductor substrates in plasma processing chambers |
| CN114467164A (en) * | 2019-09-12 | 2022-05-10 | 应用材料公司 | Repellent web and deposition method |
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