CN119764993A - A design scheme and preparation method of electrically pumped nano-laser - Google Patents
A design scheme and preparation method of electrically pumped nano-laserInfo
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- CN119764993A CN119764993A CN202411880432.6A CN202411880432A CN119764993A CN 119764993 A CN119764993 A CN 119764993A CN 202411880432 A CN202411880432 A CN 202411880432A CN 119764993 A CN119764993 A CN 119764993A
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Abstract
The invention relates to a design scheme for realizing an electric pumping nano laser at room temperature and a preparation method thereof, belonging to the fields of nano laser technology and micro-nano optics. The electrically pumped nano-laser comprises a nano-optical resonant cavity with a high quality factor and an LED. The nanometer optical resonant cavity breaking through the optical diffraction limit is provided by a surface plasmon array and is used for screening nanometer laser of energy matching. The preparation method comprises the steps of (1) preparing an LED part, (2) preparing a surface plasmon array, and (3) tightly combining the surface plasmon array part and the LED part. The technical core comprises (1) the excellent performance of the surface plasmon is the basis for ensuring that the nano laser reaches a threshold, (2) parameters such as the light transmittance, the thickness and the like of a substrate of the surface plasmon array ensure no barrier interaction between the nano optical cavity and the LED, and (3) the matching of the resonant wavelength of the nano optical cavity and the LED luminous wave band. The nano laser provided by the invention can be used as an on-chip light source to play an important role in the fields of photoelectric integration, photoelectric interconnection, quantum computation and the like.
Description
Technical Field
The invention relates to the fields of nano laser technology and micro-nano optics, in particular to a design scheme and a preparation method of an electric pumping nano laser.
Background
Since 1960 laser invention, laser light has improved human life in many fields with its excellent properties of high brightness, good directivity, strong monochromaticity and high coherence. With the increasing demand for high data rates, high interconnect densities, and low power consumption, small-scale lasers have become an exciting area of research and have attracted a large number of researchers to conduct research. In particular, the nano laser can generate nano-scale coherent light, and is expected to become a key component of applications such as an on-chip light source, an optoelectronic integrated chip, ultra-high density information storage, biosensing, nano lithography, super-resolution imaging, an optical interconnection system and the like. In order to promote the wide application of nano lasers in various fields, a great deal of research is being conducted on developing electrically pumped nano lasers based on various gain media, different cavity structures and precise device designs.
Compared to the not yet realized electrically pumped nanolasers based on nanoresonators, significant progress has been made in miniaturizing lasers using microresonators and nanocavities. Compact micro lasers based on well known microcavities, such as Fabry-perot (FP), photonic Crystals (PC), distributed Bragg Reflectors (DBR), random Cavities (RC), and Whispering Gallery Modes (WGM), have been successfully developed. With the advancement of high precision nanofabrication, it has also become possible to produce electrically pumped lasers on the nanoscale. However, the biggest feature of nanolasers compared to other small lasers is the need for a resonator that oscillates light at the nanoscale, which requires that the cavity must be able to break through the optical diffraction limit and also places higher demands on the nanooptical cavity. The surface plasmon structure (plasmonic structure) is a proven principal approach to break through the optical diffraction limit by the surface plasmon resonance (surface plasmon resonance, SPR) process, thereby achieving nano-optical cavities. However, what is provided by the surface plasmon structure is a metal cavity having a non-negligible loss compared to conventional dielectric optical cavities. Therefore, the reported optically pumped nanolasers either require high energy pulsed light as a pumping source or require an ultra-low temperature working environment to achieve nanolasing, which also means that the research of electrically pumped nanolasers faces greater difficulties. In fact, there are some reported works claiming to introduce plasmonic effects to build nano-cavities. But these efforts have not provided conclusive evidence for the realization of nanocapsules. Therefore, in addition to the problem of high quality nano-optical cavities that need to be solved, the innovative design of the device structure of electrically pumped nano-lasers is another core problem to be solved.
Disclosure of Invention
In view of the above-mentioned shortcomings in the prior art, an object of the present invention is to provide a design and a manufacturing method of an electrically pumped nano-laser, which solves the problem of having (1) an ultra-high performance nano-optical cavity and (2) an innovative device structure.
In order to achieve the above purpose, the invention adopts the following technical scheme:
the design scheme and the preparation method of the electric pumping nanometer laser comprise the following steps:
(1) Preparation of an LED (light-emitting diode) part;
(2) Preparing a surface plasmon array, namely a nano optical resonant cavity;
(3) The surface plasmon array is tightly attached to the surface of the LED part and is perpendicular to the light emitting direction of the LED;
(4) And (3) the device in the electric pump (3) is characterized in that the surface plasmon cavity screens out the narrow-band nanometer laser meeting the energy matching from the broadband LED luminescence.
The LED in step (1) may be any of COB LEDs, QLED, peLED, OLED, etc.
The LED in the step (1) can emit light with different wavelengths such as ultraviolet light, blue light, green light, red light or white light.
The LED composition described in step (1) may be of the p-n junction type formed by a p-type semiconductor, a quantum well MQW, an n-type semiconductor, or a multilayer configuration composed of a transport layer, a light emitting layer, and a cathode and an anode.
The surface plasmon array in the step (2) can be prepared by a direct-writing photoetching method, a nano-imprinting method, ultraviolet holographic photoetching and the like.
The arrangement mode of the surface plasmon array in the step (2) can be orthogonal arrangement, regular hexagonal arrangement or other modes.
The nanoparticle shape in the surface plasmon array in step (2) may be a sphere, a cylinder, a bow tie or other polygons.
The surface plasmon array plating metal in the step (2) may be gold, silver, aluminum, copper, or the like.
And (3) the plating thickness of the surface plasmon array surface plasmon material in the step (2) is 50-200nm.
In the step (3), the surface plasmon array and the LED can be respectively prepared and then attached, and also can be integrally prepared, and the surface plasmon array and the LED can be sequentially completed layer by layer.
And (3) the resonance wavelength of the surface plasmon nanometer optical cavity in the step (4) is consistent with the wavelength of the finally emergent nanometer laser.
And (3) the polarization direction of the nano laser light screened in the step (4) is consistent with the polarization direction of the nano optical cavity.
The invention has the following advantages:
1. The surface plasmon array can support SPR resonance modes with extremely high Quality factors (Q) and ultra-strong near field enhancement, which is a precondition advantage of reducing the threshold value of the nano laser.
2. The surface plasmon array can provide the nano optical cavity in the visible light wave band, and has the advantage of realizing the development of the nano laser electrically pumped in the visible light wave band at room temperature.
3. The invention fully utilizes the advantage that the surface plasmon array can be prepared in a large area, and provides advantages for conveniently combining with part of the LED and conveniently detecting the nano laser.
4. The invention fully utilizes the current mature LED preparation process and provides important advantages for the development of the electric pumping nano laser.
Drawings
Fig. 1 is a schematic diagram of an electrically pumped nano-laser according to an embodiment of the present invention.
In the figure, 1 '-power supply; 2,2' -surface plasmon array, 3 '-n-type semiconductor or electron transport layer, 4' -quantum well or light emitting layer, 5 '-p-type semiconductor or hole transport layer, 6' -substrate.
FIG. 2 is a spectral diagram provided by an embodiment of the present invention.
In the figure, the spectrum comprises a 1-SPR reflection spectrum, a 2-LED electroluminescence spectrum and a 3-electric pumping nanometer laser spectrum.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
1. The design scheme of the electric pumping nano laser provided by the invention is shown in fig. 1 and 2, and the detailed steps are as follows:
(1) Preparation of LED (light-emitting diode) section:
1. Substrate selection and processing, selecting a proper substrate material, wherein common substrate materials comprise Sapphire (Sapphire) or aluminum nitride (AlN), and ensuring the substrate to be clean and flat after cleaning and surface treatment, as shown in 6 and 6' in fig. 1;
Deposition of an n-type semiconductor layer a layer of n-type semiconductor material, typically gallium nitride (GaN), is deposited on a substrate, typically a few microns thick. The process is mostly carried out by adopting an organic metal chemical vapor deposition (MOCVD) or Molecular Beam Epitaxy (MBE) technology, as shown in 5 and 5' in figure 1;
3. Deposition of a multi-layer quantum well structure is deposited on an n-type semiconductor layer, wherein the light emitting active layer is typically deposited alternately from gallium germanium (GaGe) and gallium nitride (GaN), the quantum well thickness typically being between 10-20 nm. In order to ensure the uniformity and photoelectric performance of the quantum well, multiple fine process control is required in the deposition process, as shown in fig. 1,4 and 4';
And 4.p depositing a p-type semiconductor material on the quantum well structure, wherein a doped gallium nitride (Mg: gaN) material is commonly adopted, and the thickness is generally from hundreds of nanometers to micrometers. This layer is responsible for providing a forward carrier transport path, as shown at 3 and 3' in fig. 1;
5. surface treatment and electrode preparation, namely, performing surface treatment on the finished chip structure, including etching to form a specific structure profile, and removing surface impurities. Subsequently, metal electrodes are fabricated on the p-type and n-type semiconductor surfaces, respectively, to form positive and negative electrodes, providing electrical connection for driving the LED, as shown at 1 and 1' in fig. 1.
6. Or directly select commercial LEDs.
(2) Preparation of a surface plasmon array, namely a nano optical resonant cavity:
1. the substrate treatment, namely cleaning a glass substrate, spin-coating positive photoresist, wherein the thickness of the coating is about 0.5 micrometer;
2. The preparation of photoetching patterns, namely carrying out pattern exposure on photoresist by adopting a holographic photoetching method, then developing by using a developing solution, fixing by using clear water after development is finished, and drying by using nitrogen;
3. Metal deposition, namely, taking the photoresist pattern as a template, and performing metal deposition to obtain a surface plasmon array consistent with the surface morphology of the photoresist pattern;
4. Pattern transfer by ultraviolet curing agent, thus preparing nano optical resonant cavity capable of combining with LED well, as shown in 2 and 2' in figure 1.
(3) And combining the plasmon array and the LED, namely tightly attaching the silver nano array and the LED through a transfer process, and keeping the silver nano array and the LED vertical to the light emitting direction of the LED, so as to form the electrically pumped nano laser, as shown in figure 1.
(4) The device in the electric pump (3) is characterized in that the surface plasmon cavity screens out nano laser meeting energy matching, the reflection spectrum of the surface plasmon is shown as1 in fig. 2, the electroluminescent spectrum of the LED is shown as 2 in fig. 2, the nano laser signal which is measured by the electric pump nano laser and consists of the surface plasmon cavity and the surface plasmon cavity is shown as 3 in fig. 2, the wavelength of the electric pump nano laser signal is 598nm, and the linewidth is 4.1381nm.
In a specific embodiment, different LEDs can be prepared by varying the p-type semiconductor, the n-type semiconductor, and the quantum well.
In a specific embodiment, different surface plasmon arrays can be prepared by varying the grating period and the metal material.
In a specific embodiment, the surface plasmon array and the LED may be tightly attached, or the preparation process of the LED may be performed first and then the preparation process of the plasmon nano optical cavity may be performed continuously in the light emitting direction.
In a specific embodiment, different electric pump Pu Nami optical devices can be prepared by designing the resonance wavelength of the surface plasmon array to match the light-emitting band of the LED.
The foregoing is illustrative of the present invention and is not to be construed as limiting thereof, but rather as various modifications, equivalent arrangements, improvements, etc., which fall within the spirit and principles of the present invention.
Claims (10)
1. The design scheme and preparation method of the electric pumping nanometer laser comprise the following steps:
(1) Preparation of an LED (light-emitting diode) part;
(2) Preparing a surface plasmon array, namely a nano optical resonant cavity;
(3) The surface plasmon array is tightly attached to the surface of the LED part and is perpendicular to the light emitting direction of the LED;
(4) And (3) the device in the electric pump (3) is characterized in that the surface plasmon cavity screens out the narrow-band nanometer laser meeting the energy matching from the broadband LED luminescence.
2. The method of claim 1, wherein in step (1), the LED seed light source emits light of different wavelengths such as ultraviolet light, blue light, green light, red light, or white light.
3. The method of claim 1, wherein in step (1), the LEDs are COB LEDs, QLEDs, peLEDs or OLEDs.
4. The method of manufacturing according to claim 1, wherein in the step (1), the structure of the LED may include a p-n junction composed of a p-type semiconductor and an n-type semiconductor, or a multilayer structure composed of a transport layer, a light emitting layer, and positive and negative electrodes.
5. The method of claim 1, wherein in step (2), the method of preparing the surface plasmon array is selected from direct write lithography, nanoimprint lithography, and ultraviolet holographic lithography.
6. The method of claim 1, wherein in step (2), the surface plasmon array has a period ranging from 300nm to 1000nm, the array arrangement may be orthogonal arrangement, regular hexagonal arrangement or other forms, the metal plating material comprises gold, silver, aluminum or copper, and the plating thickness ranges from 50nm to 200nm.
7. The method of claim 1, wherein in the step (3), the surface plasmon array and the LED are combined in a manner of lamination after being prepared separately, or in a manner of integral preparation, and the steps are completed layer by layer.
8. The method of claim 1, wherein in step (4), the emission wavelength of the nanolaser is identical to the resonance wavelength of the surface plasmon optical cavity.
9. The method of claim 1, wherein in step (4), the polarization direction of the selected nano-laser light is identical to the polarization direction of the nano-optical cavity.
10. The electric pumping nano laser and the manufacturing method thereof according to any one of claims 1-9 are characterized in that the electric pumping nano laser integrates a surface plasmon optical cavity and an LED seed light source, the LEDs are light sources capable of emitting light with different wavelengths, the surface plasmon optical cavity is formed by a metal periodic array, the optical diffraction limit can be broken through, the array period is 300nm to 1000nm, the resonance wavelength is overlapped with the light emitting wave band of the LEDs in a spectrum mode, and the surface plasmon cavity screens nano lasers meeting energy matching when voltage is applied to the laser.
Publications (1)
| Publication Number | Publication Date |
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| CN119764993A true CN119764993A (en) | 2025-04-04 |
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