CN119758194A - Two-dimensional differential Hall chip, sensor element and magnetic field measurement method thereof - Google Patents

Abstract

The present invention discloses a two-dimensional differential Hall chip, a sensor element and a magnetic field measurement method thereof, wherein the two-dimensional differential Hall chip comprises: two groups of Hall pair chips arranged in a cross shape and a single magnetic concentrating layer located on the two groups of Hall pair chips; each group of Hall pair chips comprises two Hall chips distributed at intervals, one group of Hall pair chips in the two groups of Hall pair chips is symmetrically arranged along the x-axis in the horizontal direction, and the other group of Hall pair chips is symmetrically arranged along the y-axis in the vertical direction; the projection of the single magnetic concentrating layer on the Hall sensitive surface of the two groups of Hall pair chips covers the central area of the two groups of Hall pair chips; the single magnetic concentrating layer covers at least part of the two groups of Hall pair chips, and the single magnetic concentrating layer is symmetrically arranged along the x-axis and the y-axis. The present invention realizes the high sensitivity, zero drift and large tolerance performance of the sensor element; realizes the miniaturization of the sensor element, and simplifies the magnetic field measurement method of the sensor element.

Description

Two-dimensional differential Hall chip, sensor element and magnetic field measuring method thereof

Technical Field

The invention relates to the technical field of semiconductors, in particular to a two-dimensional differential Hall chip, a sensor element and a magnetic field measuring method thereof.

Background

Hall technology has been widely used in various fields, but it is limited in many cases due to its sensitivity to only vertical magnetic fields. The Hall capable of inducing the magnetic field in the horizontal direction can realize the measurement of the planar two-dimensional magnetic field, and has wide application prospect in the fields of current detection, mobile phone navigation, gesture measurement and control, angle detection, position detection and the like.

The existing horizontal Hall technology utilizes a magnetic focusing layer to deflect a horizontal signal, and combines a differential technology to improve gain and reduce interference, but still has the problems of signal drift and assembly tolerance. The current drift removal method is to load the working end and the signal end by circuit cyclic transformation, namely spin technology. The implementation of the scheme has the defects of complex circuit, slower response, difficult improvement of frequency bandwidth and the like. The existing design of the double-magnet Hall pair can realize the measurement of a uniaxial magnetic field, but the signal offset caused by the installation position error of the magnet is larger. The structure needs jumper wires for connection, and the signal drift is larger, and the magnets on two sides protrude outwards to improve the sensitivity, so that the chip size is difficult to reduce.

In the related art, the 2D Hall chip capable of simultaneously sensing the magnetic fields in two directions can realize the plane magnetic field detection function, and has wide application prospects in the fields of 2D switches, angle sensing, jitter measurement, control and the like. The existing multidimensional Hall technology needs a digital signal processing circuit to obtain final output by complex calculation. It has the disadvantages of low space utilization, complex circuit, high cost, long response time, etc. More importantly, in many applications, only horizontal magnetic field strength is needed, the signal of each axis is not needed to be solved, and the z axis generates larger crosstalk to the horizontal direction due to errors. Conventional solutions require isolation of the z-axis or increase in the number of hall elements, which complicates the design or process and results in higher costs.

Disclosure of Invention

The technical problem solved by the invention is to provide a two-dimensional differential Hall chip, a sensor element and a magnetic field measuring method thereof, which realize the high sensitivity, zero drift and large tolerance performance of the sensor element, and simultaneously realize the miniaturization of the sensor element because only one single magnetic layer is arranged and is in a single-layer structure.

In order to solve the technical problems, the technical scheme of the application is as follows:

according to a first aspect of an embodiment of the present application, there is provided a two-dimensional differential hall chip including:

Each group of Hall pair chips comprises two Hall chips which are distributed at intervals, one group of Hall pair chips in the two groups of Hall pair chips are symmetrically arranged along the x axis of the horizontal direction, and the other group of Hall pair chips are symmetrically arranged along the y axis of the vertical direction;

the projection of the single magnetic layer on the Hall sensitive surfaces of the two groups of Hall pair chips is positioned in the central area of the two groups of Hall pair chips, the single magnetic layer covers at least part of the two groups of Hall pair chips, and the single magnetic layer is symmetrically arranged along the x axis and the y axis.

In an exemplary embodiment, the two sets of hall pair chips comprise a first hall pair chip set and a second hall pair chip set, wherein the first hall pair chip set and the second hall pair chip set are mutually perpendicular, the first hall pair chip set comprises a first hall chip and a second hall chip, the first hall chip and the second hall chip are arranged side by side in a contactless manner, the central axis of the first hall chip along the horizontal direction and the central axis of the second hall chip along the horizontal direction are positioned on the same straight line, and the central axis of the first hall chip along the vertical direction and the central axis of the second hall chip along the vertical direction are mutually parallel;

The single magnetic layer covers at least part of the first Hall chip and at least part of the second Hall chip, and the coverage area of the single magnetic layer on the first Hall chip is equal to the coverage area of the single magnetic layer on the second Hall chip.

In an exemplary embodiment, the second hall pair chip set comprises a third hall chip and a fourth hall chip, wherein the third hall chip and the fourth hall chip are arranged side by side in a contactless manner, the central axis of the third hall chip along the horizontal direction is parallel to the central axis of the fourth hall chip along the horizontal direction, and the central axis of the third hall chip along the vertical direction and the central axis of the fourth hall chip along the vertical direction are positioned on the same straight line;

The single magnetic layer covers at least part of the third Hall chip and at least part of the fourth Hall chip, and the coverage area of the single magnetic layer on the third Hall chip is equal to the coverage area of the single magnetic layer on the fourth Hall chip.

In an exemplary embodiment, the first hall chip is arranged opposite to the third hall chip, the second hall chip is arranged opposite to the fourth hall chip, the two hall chips arranged opposite to each other are connected in parallel and are electrically connected in a differential mode, the first hall pair chip set is used for detecting a magnetic field in the horizontal direction, and the second hall pair chip set is used for detecting a magnetic field in the vertical direction.

In an exemplary embodiment, a preset area is formed among the first hall chip, the second hall chip, the third hall chip and the fourth hall chip, and the single magnetic focusing layer covers the preset area.

In an exemplary embodiment, the ratio of the area covered by the single magnetic layer on each Hall chip to the area of each Hall chip is 1 (1-10).

In an exemplary embodiment, the distance between the edges of two hall chips in each set of the hall pair chips is 5-500 micrometers, and the thickness of the single magnetic layer is 5-500 micrometers.

In an exemplary embodiment, the single magnetic layer is an even number polygon, a circle, an ellipse, or a star having an even number of corners.

According to a second aspect of embodiments of the present application, there is provided a sensor element comprising:

The two-dimensional differential Hall chip comprises a preset analog circuit board and the two-dimensional differential Hall chip which is arranged on the preset analog circuit board;

And the connecting line of the central points of the two Hall chips along the x-axis direction in the two-dimensional differential Hall chips is perpendicular to the current direction of the preset analog circuit board.

According to a third aspect of embodiments of the present application, there is provided a magnetic field measurement method of a sensor element, the method comprising:

Determining a first differential voltage calculation formula of a first Hall pair chip set in the sensor element and a second differential voltage calculation formula of the second Hall pair chip set;

Determining the sensitivity gain coefficient of each group of Hall pair chips to the z-axis magnetic field of the sensor element to obtain a preset gain coefficient;

determining the type of an analog circuit corresponding to a preset analog circuit board in the sensor element;

And determining a horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type and the preset gain coefficient.

In an exemplary embodiment, the determining the first differential voltage calculation formula of the first hall pair chip set and the second differential voltage calculation formula of the second hall pair chip set in the sensor element includes:

Determining an included angle sine value formula and an included angle cosine value formula according to the included angle between the horizontal magnetic field of the sensor element and the x axis;

Constructing a first differential voltage calculation formula of the first Hall pair chip set according to the included angle sine value formula and the preset gain coefficient;

and constructing a second differential voltage calculation formula of the second Hall pair chip set according to the included angle cosine value formula and the preset gain coefficient.

In an exemplary embodiment, the determining the horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain factor includes:

If the analog circuit type is a square sum analog circuit, determining a first differential voltage square sum formula based on the first differential voltage calculation formula, and determining a second differential voltage square sum formula based on the second differential voltage calculation formula;

Calculating the product of the preset gain coefficient and the horizontal magnetic field signal to obtain a gain magnetic field signal product formula;

Constructing a square sum formula according to the sum of the first differential voltage square sum formula and the second differential voltage square sum formula;

And calculating the horizontal magnetic field signal of the sensor element according to the corresponding relation between the square of the gain magnetic field signal product and the square sum formula.

In an exemplary embodiment, the determining the horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain factor includes:

If the analog circuit type is an absolute value and analog circuit, determining a first differential voltage absolute value formula based on the first differential voltage calculation formula, and determining a second differential voltage absolute value formula based on the second differential voltage calculation formula;

constructing an absolute value sum formula according to the sum of the first differential voltage absolute value formula and the second differential voltage absolute value formula;

Calculating the product of the preset gain coefficient and the horizontal magnetic field signal to obtain a gain magnetic field signal product formula;

obtaining an included angle sum formula according to the sum of the absolute value of the included angle sine value formula and the absolute value of the included angle cosine value formula;

Calculating the product of the gain magnetic field signal product formula and the included angle sum formula to obtain a magnetic field angle product formula;

And calculating the horizontal magnetic field signal of the sensor element according to the corresponding relation between the absolute value sum formula and the magnetic field angle product formula.

In an exemplary embodiment, the sensor element is an angle sensor, and the determining the horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain factor includes:

if the analog circuit type is a division analog circuit, determining a first formula of an x-axis signal component of the horizontal magnetic field based on the first differential voltage calculation formula;

determining a second formula of a y-axis signal component of the horizontal magnetic field based on the second differential voltage calculation formula;

Constructing a calculation formula of an included angle tangent value based on the first formula and the second formula, wherein the included angle is an angle between a horizontal magnetic field of the sensor element and the x-axis;

And calculating the output angle value of the angle sensor based on a calculation formula of the included angle tangent value.

Compared with the prior art, the technical scheme of the invention has the following beneficial effects:

The two-dimensional differential Hall chip comprises two groups of Hall pair chips which are arranged in a cross shape and a single magnetic focusing layer positioned on the two groups of Hall pair chips, wherein each group of Hall pair chips comprises two Hall chips which are distributed at intervals, one group of Hall pair chips in the two groups of Hall pair chips are symmetrically arranged along the x axis of the horizontal direction, the other group of Hall pair chips are symmetrically arranged along the y axis of the vertical direction, the projection of the single magnetic focusing layer on the Hall sensitive surfaces of the two groups of Hall pair chips covers the central areas of the two groups of Hall pair chips, the single magnetic focusing layer covers at least part of the two groups of Hall pair chips, and the single magnetic focusing layer is symmetrically arranged along the x axis and the y axis. The invention realizes the high sensitivity, zero drift and large tolerance performance of the two-dimensional differential Hall chip, and simultaneously realizes the miniaturization of the two-dimensional differential Hall chip as only one single magnetic layer is arranged and is in a single-layer structure.

Drawings

In order to more clearly illustrate the technical solutions of the present invention, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic structural diagram of a two-dimensional differential hall chip according to an embodiment of the present invention;

FIG. 2 is a cross-sectional view of a group of two-dimensional differential Hall chips along a horizontal direction according to an embodiment of the present invention;

fig. 3 is a schematic structural diagram II of a two-dimensional differential hall chip according to an embodiment of the present invention;

FIGS. 4-5 are wiring diagrams of a two-dimensional differential Hall chip provided by an embodiment of the present invention;

FIG. 6 is a signal error comparison plot of a two-dimensional differential Hall chip with a single magnetic layer and a dual magnetic core chip of the related art according to an embodiment of the present invention;

FIG. 7 is a schematic diagram of a linear Hall sensor corresponding to a square and analog circuit according to an embodiment of the present invention;

FIG. 8 is a schematic diagram of a switch sensor structure corresponding to an absolute value and an analog circuit according to an embodiment of the present invention;

Fig. 9 is a schematic diagram of an angle sensor corresponding to a division analog circuit according to an embodiment of the present invention;

fig. 10 is a schematic diagram of magnetic field detection of an angle sensor according to an embodiment of the present invention.

Wherein, the reference numerals in the figures correspond to:

1-a first hall pair chip set, 11-a first hall chip, 12-a second hall chip, 2-a second hall pair chip set, 21-third Hall chip, 22-fourth Hall chip, 3-single magnetic layer, 4-bonding pad, 5-electrode and 6-preset circuit board.

Detailed Description

The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention.

Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the application. In the description of the present application, it is to be understood that spatially relative terms, such as "..under", "below", "lower", "upper", "front", "back", "above", and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It is used merely for convenience in describing the application and to simplify the description and does not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operate in a particular orientation, and thus should not be construed as limiting the application. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted similarly.

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of elements and configurations are described below to simplify the present disclosure. Of course, these elements and configurations are merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. Further, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may include one or more of the feature, either explicitly or implicitly. Moreover, the terms "first," "second," and the like, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the application described herein may be implemented in sequences other than those illustrated or otherwise described herein.

As shown in fig. 1-3, the embodiment of the invention provides a structural schematic diagram of a two-dimensional differential hall chip, which comprises two groups of hall pair chips arranged in a cross shape and a single magnetic focusing layer 3 positioned on the two groups of hall pair chips, wherein each group of hall pair chips comprises two hall chips which are distributed at intervals, one group of hall pair chips in the two groups of hall pair chips are symmetrically arranged along the x axis of the horizontal direction, and the other group of hall pair chips are symmetrically arranged along the y axis of the vertical direction;

the projection of the single magnetic layer 3 on the Hall sensitive surfaces of the two groups of Hall pair chips covers the central areas of the two groups of Hall pair chips, the single magnetic layer 3 covers at least part of the two groups of Hall pair chips, and the single magnetic layer 3 is symmetrically arranged along the x axis and the y axis.

The two groups of Hall pair chips comprise a first Hall pair chip group 1 and a second Hall pair chip group 2, the first Hall pair chip group 1 and the second Hall pair chip group 2 are mutually perpendicular, the first Hall pair chip group 1 comprises a first Hall chip 11 and a second Hall chip 12, the first Hall chip 11 and the second Hall chip 12 are arranged side by side in a contactless manner, the central axis of the first Hall chip 11 along the horizontal direction and the central axis of the second Hall chip 12 along the horizontal direction are positioned on the same straight line, the central axis of the first Hall chip 11 along the vertical direction and the central axis of the second Hall chip 12 along the vertical direction are mutually parallel, as shown in figures 1 and 3, the two-dimensional differential Hall chip comprises a first Hall pair chip group, a first Hall chip 11 (Hall A), a second Hall chip 12 (Hall B) and a second pair chip group, a third Hall chip 21 (Hall C) and a fourth Hall chip 11 (Hall B) which are transversely arranged along the horizontal direction (y axis), and the first Hall pair magnetic layer and the second Hall chip group are symmetrically distributed on the single magnetic layer 3 and the single magnetic layer 3 are arranged on the single magnetic layer 3, as shown in the figure 1 and the single magnetic layer 3.

As shown in fig. 2, the single magnetic layer 3 covers at least part of the first hall chip 11 and at least part of the second hall chip 12, and the coverage area of the single magnetic layer 3 on the first hall chip 11 is equal to the coverage area of the single magnetic layer 3 on the second hall chip 12. The magnetic force lines are shown as green lines in fig. 2, and the single magnetic focusing layer turns the horizontal magnetic field upwards and downwards in the central area of the hall to form two hall signals with opposite polarities, and the output is determined as a differential signal by the parallel electrode connection mode. The differential signals naturally eliminate the interference of the homodromous magnetic field. And the working currents of the first Hall chip (Hall A) and the second Hall chip (Hall B) are mutually perpendicular, so that the output zero offset is ensured to be very low, and the drift of differential signals is very small.

In the embodiment of the present specification, the first hall chip 11 and the second hall chip 12 are differentially connected in parallel, and a preset distance is kept between the first hall chip 11 and the second hall chip 12. The single magnetic layer 3 is of a single-layer structure, only one single magnetic layer 3 is arranged in the differential Hall chip, the single magnetic layer 3 covers at least part of the first Hall chip 11, namely, the single magnetic layer 3 can cover a local area or a whole area of the first Hall chip 11, namely, the local area or the whole area of the first Hall chip 11 can be covered, the same covering mode is adopted for the second Hall chip 12, the covering area of the single magnetic layer 3 on the first Hall chip 11 is equal to the covering area of the single magnetic layer 3 on the second Hall chip 12, namely, the single magnetic layer 3 is symmetrically arranged relative to the distance center line of the two Hall chips, each Hall chip is of a cross-shaped structure, each Hall chip comprises four ends, and when the single magnetic layer 3 covers the local Hall chip, the single magnetic layer 3 covers the edge area of the closest side between the two Hall chips. Illustratively, the single magnetic layer 3 covers the spacing region between the first hall chip 11 and the second hall chip 12 at the same time, i.e. the single magnetic layer 3 forms a connection between the first hall chip 11 and the second hall chip 12.

In an exemplary embodiment, the shapes and structures of the first hall chip 11 and the second hall chip 12 are the same, the first hall chip 11 and the second hall chip 12 are in cross symmetrical structures, the central axes of the first hall chip 11 and the second hall chip 12 in the horizontal direction can be set as an x symmetrical axis, the central line of the distance between the first hall chip 11 and the second hall chip 12 can be set as a y symmetrical axis, and the first hall chip 11 and the second hall chip 12 are symmetrical about the x axis and the y axis at the same time. As shown in fig. 2, the single magnetic layer 3 is disposed on the upper surfaces of the first hall chip 11 and the second hall chip 12, and covers part of the first hall chip 11 and part of the second hall chip 12, and the area between the first hall chip 11 and the second hall chip 12.

In an exemplary embodiment, the second hall chip set 2 includes a third hall chip 21 and a fourth hall chip 22, wherein the third hall chip 21 and the fourth hall chip 22 are arranged side by side in a contactless manner, a central axis of the third hall chip 21 along a horizontal direction is parallel to a central axis of the fourth hall chip 22 along the horizontal direction, and a central axis of the third hall chip 21 along a vertical direction and a central axis of the fourth hall chip 22 along the vertical direction are on the same straight line;

The single magnetic layer 3 covers at least part of the third hall chip 21 and at least part of the fourth hall chip 22, and the coverage area of the single magnetic layer 3 on the third hall chip 21 is equal to the coverage area of the single magnetic layer 3 on the fourth hall chip 22.

In the embodiment of the present specification, the center points of the first hall chip 11, the second hall chip 12, the third hall chip 21, and the fourth hall chip 22 may be located on the same circumference. The first hall chip 11 and the second hall chip 12 are symmetrically distributed along the horizontal direction (x axis) and the vertical direction (y axis), the third hall chip 21 and the fourth hall chip 22 are symmetrically distributed along the horizontal direction (x axis) and the vertical direction (y axis), and the central axes of the first hall chip 11 and the second hall chip 12 in the horizontal direction are the x axis and the central axes of the third hall chip 21 and the fourth hall chip 22 in the vertical direction are the y axis.

In this embodiment, two third hall chips 21 and fourth hall chips 22 which are symmetrically distributed in the vertical direction can be provided, so that the symmetry of the differential hall chip with the two-dimensional structure is ensured, and the corresponding single magnetic layer 3 is provided on the symmetrical chip structure, so that the symmetry of the whole structure of the differential hall chip is ensured, and the differential hall chip has the performances of high sensitivity, zero drift and large tolerance.

In an exemplary embodiment, the first hall chip 11 is disposed opposite to the third hall chip 21, the second hall chip 12 is disposed opposite to the fourth hall chip 22, the two hall chips disposed opposite to each other are electrically connected in parallel and differentially, the first hall pair chip set 1 is used for detecting a magnetic field in a horizontal direction, and the second hall pair chip set 2 is used for detecting a magnetic field in a vertical direction.

In the embodiment of the present specification, the distance between the third hall chip 21 and the first hall chip 11 is equal to the distance between the third hall chip 21 and the second hall chip 12, and the distance between the fourth hall chip 22 and the first hall chip 11 is equal to the distance between the fourth hall chip 22 and the second hall chip 12. All the chips in the two Hall pair chip sets form a cross structure, wherein a first Hall pair chip set 1 positioned in the horizontal direction is used for detecting a magnetic field in the horizontal direction, a second Hall pair chip set 2 positioned in the vertical direction is used for detecting a magnetic field in the vertical direction, and the two-dimensional structure can be used for simultaneously detecting the magnetic fields in the horizontal direction and the vertical direction. The parallel differential electrical connection of the two Hall chips which are oppositely arranged can enable the z-axis signals of the two Hall chips to be subtracted, so that the detection accuracy of magnetic field signals in the horizontal direction and the vertical direction is improved.

In an exemplary embodiment, a preset area is formed among the first hall chip 11, the second hall chip 12, the third hall chip 21 and the fourth hall chip 22, and the single magnetic layer 3 covers the preset area.

In the embodiment of the present disclosure, the non-contact areas among the first hall chip 11, the second hall chip 12, the third hall chip 21 and the fourth hall chip 22 form a preset area, and the single magnetic layer 3 may cover the preset area, and when the single magnetic layer 3 covers part of the hall chips, the covered part of the hall chips are all the parts of each hall chip, which are close to the preset area. In this embodiment, the single magnetic layer 3 may cover the interval area between the plurality of hall chips and at least part of the area of each hall chip, so as to ensure the connection relationship between the single magnetic layer and the plurality of hall chips.

In the present embodiment, the single magnetic layer 3 may cover part or all of the first hall pair chip set 1, part or all of the second hall pair chip set 2, and part or all of the interval region between the first hall pair chip set 1 and the second hall pair chip set 2. Through setting up the single magnetic layer that gathers of each chipset on the chip of two-dimensional structure, reduced the quantity that gathers the magnetic layer, simplified the structural design of difference hall chip, reduced the size of difference hall chip, realized the miniaturization of difference hall chip of two-dimensional structure.

In the embodiment of the present specification, the coverage area of the single magnetic layer 3 on the first hall pair chip set 1 is equal to the coverage area of the single magnetic layer 3 on the second hall pair chip set 2, that is, when the single magnetic layer 3 covers part of the first hall pair chip set 1, part of the second hall pair chip set 2 is also covered, and when the single magnetic layer 3 covers all of the first hall pair chip sets 1, all of the second hall pair chip sets 2 are also covered. The coverage area of the single magnetic focusing layer 3 on the first Hall pair chip set 1 is controlled to be equal to the coverage area of the single magnetic focusing layer 3 on the second Hall pair chip set 2, so that the single magnetic focusing layer 3 is symmetrically arranged on the Hall pair chips with the two-dimensional structure, and the interference of a z-axis magnetic field is effectively eliminated through the design of the single magnetic focusing layer 3 with the symmetrical structure, and the sensitivity of magnetic field signal testing is improved.

In the embodiment of the specification, the size of each Hall chip in the Hall pair chip is the same, and the ratio of the coverage area of the single magnetic layer 3 on each Hall chip to the area of each Hall chip is 1 (1-10).

In the embodiment of the present specification, the distance between the edges of two hall chips in each group of the hall pair chips is 5-500 micrometers, and the thickness of the single magnetic layer 3 is 5-500 micrometers.

In the embodiment of the specification, in the two-dimensional structure, the ratio of the coverage area of the single magnetic layer 3 on each Hall chip to the area of each Hall chip is 1 (1-5), the distance between the edges of two Hall chips in each group of Hall pair chips can be set to be 5-500 micrometers, and the thickness of the single magnetic layer 3 can be set to be 5-500 micrometers, so that the sensitivity of the differential Hall chips can be further improved, and zero drift and large tolerance performance can be realized.

In the present embodiment, the single magnetic layer 3 is an even polygon, a circle, an ellipse, or a star having an even number of corners. The single magnetic layer 3 is of a symmetrical structure, can be arranged into symmetrical even polygons, circles, ovals or stars, can be arranged into a quadrangle structure and the like, can be also arranged into any symmetrical structure with other shapes, realizes the flexibility of the shape arrangement of the single magnetic layer 3 and the diversity of shape selection, and can realize the high sensitivity, zero drift and large tolerance performance of the differential Hall chip by adopting the single magnetic layer 3 with different shapes.

By way of example, the material of the single magnetic layer 3 may be a material with high magnetic permeability, such as ferrite, iron-nickel alloy, soft magnetic material, silicon steel, or the like.

As shown in fig. 4-5, fig. 4-5 are wiring diagrams of a differential hall chip with a two-dimensional structure, wherein the first hall chip 11, the second hall chip 12, the third hall chip 21 and the fourth hall chip 22 are connected through connecting wires, and bonding pads 4 are arranged between the connecting wires. The four ports of each Hall chip are respectively provided with an electrode 5, the electrodes 5 of the two Hall chips are connected through wires, a bonding pad 4 is arranged between the wires, each Hall chip comprises two first electrodes which are transversely arranged and two second electrodes which are longitudinally arranged, wherein in the two Hall chips which are oppositely arranged, the first electrodes which are transversely arranged in one Hall chip are used for applying voltage, the second electrodes which are longitudinally arranged in the other Hall chip are used for generating first Hall potential, the second electrodes which are longitudinally arranged in the other Hall chip are used for applying voltage, the first electrodes which are transversely arranged are used for generating second Hall potential, and the first Hall potential and the second Hall potential are led out through signals in a parallel connection mode. The two first electrodes of the first hall chip 11 are respectively connected with the two second electrodes of the second hall chip 12 and are respectively provided with bonding pads 4 on two connecting lines, the two second electrodes of the first hall chip 11 are respectively connected with the two first electrodes of the second hall chip 12 and are provided with bonding pads 4 on two connecting lines, and a voltage is applied to one group of bonding pads 4 to generate hall potentials on the other group of bonding pads. The single magnetic layer 3 in fig. 4 is elliptical, and the single magnetic layer 3 in fig. 5 is a symmetrical quadrangle star structure.

As shown in FIG. 6, the two-dimensional Hall chip of the embodiment and the chips with the magnets attached to two sides of two Hall chips in the prior art are adopted to test signal errors respectively to obtain test comparison results as shown in FIG. 6, and as can be seen, under the severe conditions that the angle deviation is 2 degrees and the translation is error, the position error of 12 micrometers corresponds to the maximum signal error, while the error of the original double-magnet chip test result (black curve) reaches 20%, the error of the invention is reduced by 8 times, and the curve is always in a lower error area, so that good mounting tolerance performance is shown. In addition, the calculation shows that the signal gain of the single magnetic flux is improved by 30%.

As shown in fig. 7-9, the present embodiment also provides a sensor element comprising:

a preset analog circuit board 6 and the two-dimensional differential hall chip arranged on the preset analog circuit board 6;

and the connecting line of the central points of two Hall chips along the x-axis direction in the two-dimensional differential Hall chips is perpendicular to the current direction of the preset analog circuit board 6.

The analog circuit type of the preset analog circuit board 6 may include a sum-of-square analog circuit, an absolute value and analog circuit, and a division analog circuit, and the sensor element may include, but is not limited to, a linear hall sensor when the preset analog circuit board 6 is a sum-of-square analog circuit board, a switch sensor when the preset analog circuit board 6 is an absolute value and analog circuit board, and an angle sensor when the preset analog circuit board 6 is a division analog circuit board.

The linear hall sensor is formed by arranging a two-dimensional differential hall chip on a square sum analog circuit board 7 as shown in fig. 7, the single magnetic layer 5 of the two-dimensional differential hall chip can be of a regular quadrilateral structure, the switch sensor is formed by arranging a two-dimensional differential hall chip on an absolute value and analog circuit board 7 as shown in fig. 8, the single magnetic layer 5 of the two-dimensional differential hall chip can be of a regular octagonal structure, the angle sensor is formed by arranging a two-dimensional differential hall chip on a division analog circuit board 7 as shown in fig. 9, and the single magnetic layer 5 of the two-dimensional differential hall chip can be of a regular dodecagon structure. Fig. 10 is a schematic diagram of magnetic field detection of an angle sensor according to an embodiment of the present invention, where an angle between a magnetic field and a horizontal plane can be accurately detected by the angle sensor.

The electrode wiring of the double-shaft Hall pair can be connected with a conditioning circuit after being subjected to minimum optimal design, and a two-dimensional magnetic field detection device is manufactured after packaging. To achieve accurate two-axis magnetic field detection and complete elimination of the z-axis magnetic field, the position of the single magnetic layer must be accurate. This requires the use of photolithographic processes to fabricate the magnetically focused layer at precise design locations. The core chip, a circuit matched with the core chip and a package can be manufactured into a two-axis magnetic field detection device which is used for precise displacement measurement of a linear Hall or switch Hall or an angle sensor.

In this embodiment, the core area of the four hall chips is only less than 10 times of a single hall size in consideration of the practical requirement of wiring. If the area of each Hall chip is 150 x 150 micrometers, the length and the width of the device can be controlled within 440 x 500 micrometers, and a small 2D magnetic field sensor is realized. If a high performance semiconductor compound material is used, the area of the single hall region is reduced to 1/4, and the chip area can be controlled to be 220 x 250 microns. This will greatly enhance the device miniaturization and cost advantages.

The sensor element comprises a two-dimensional differential Hall chip, wherein the two-dimensional differential Hall chip comprises two Hall pair chips which are mutually and vertically arranged, the two Hall pair chips are connected to form a parallel differential Hall pair, the projection of a single magnetic layer on a Hall sensitive surface covers the central area of the differential Hall chip, so that a z-axis magnetic field signal can be eliminated, the output of the differential Hall chip is ensured to be free of the z-axis magnetic field signal, the detection accuracy of the magnetic field signal is improved, the high sensitivity, zero drift and large tolerance performance of the sensor element are realized, and meanwhile, the miniaturization of the sensor element is realized due to the fact that only one single magnetic layer is arranged, and the single magnetic layer is of a single-layer structure.

The embodiment of the invention also provides a magnetic field measuring method of the sensor element, wherein the sensor element is constructed based on the two-dimensional differential Hall chip and a preset analog circuit board, and the method comprises the following steps:

Determining a first differential voltage calculation formula of a first Hall pair chip set in the sensor element and a second differential voltage calculation formula of the second Hall pair chip set;

Determining the sensitivity gain coefficient of each group of Hall pair chips to the z-axis magnetic field of the sensor element to obtain a preset gain coefficient;

determining the type of an analog circuit corresponding to a preset analog circuit board in the sensor element;

And determining a horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type and the preset gain coefficient.

In some embodiments, the method further comprises:

Determining a sensitivity gain coefficient of the first Hall pair chip set to the x-axis magnetic field to obtain an x-axis gain coefficient k _x;

Constructing the first differential voltage calculation formula V _AB＝(V_A-V_B)/2＝k_xB_x based on the x-axis gain coefficient and an x-axis signal component B _x of the horizontal magnetic field of the sensor element;

Determining a sensitivity gain coefficient of the second Hall pair chip set to the y-axis magnetic field to obtain a y-axis gain coefficient k _y;

And constructing the second differential voltage calculation formula V _CD＝(V_C-V_D)/2＝k_yB_y based on the y-axis gain coefficient and the y-axis signal component of the horizontal magnetic field of the sensor element.

In an embodiment of the present disclosure, the constructing the first differential voltage calculation formula based on the x-axis gain coefficient and the x-axis signal component of the horizontal magnetic field of the sensor element includes:

Determining a sensitivity gain coefficient of the first Hall to the magnetic field of the z-axis of the chipset to obtain a first gain coefficient k ₁;

acquiring a first Hall chip and a second Hall chip in the first Hall pair chip set;

Determining a first product formula of the first gain coefficient and the z-axis signal component B _z of the horizontal magnetic field and a second product formula of the x-axis gain coefficient and the x-axis signal component B _x of the horizontal magnetic field;

Based on the sum of the first product formula and the second product formula, a first magnetic field signal calculation formula of the first Hall chip is constructed, wherein V _A＝K₁B_z+K_xB_x is the sum of the first product formula and the second product formula;

Constructing a second magnetic field signal calculation formula of the second Hall chip based on the difference between the first product formula and the second product formula, wherein V _B＝K₁B_z-K_xB_x is the sum of the first magnetic field signal calculation formula and the second magnetic field signal calculation formula;

And constructing the first differential voltage calculation formula V _AB＝(V_A-V_B)/2＝k_xB_x based on the difference value of the first magnetic field signal calculation formula and the second magnetic field signal calculation formula.

In an embodiment of the present disclosure, the constructing the second differential voltage calculation formula based on the y-axis gain coefficient and the y-axis signal component of the horizontal magnetic field of the sensor element includes:

Determining a sensitivity gain coefficient of the second Hall pair chip set to the z-axis magnetic field to obtain a second gain coefficient k ₂;

acquiring a third Hall chip and a fourth Hall chip in the second Hall pair chip set;

Determining a third product formula of the second gain coefficient and the z-axis signal component B _z of the horizontal magnetic field, and a fourth product formula of the y-axis gain coefficient and the y-axis signal component B _y of the horizontal magnetic field;

Based on the sum of the third multiplication formula and the fourth multiplication formula, a third magnetic field signal calculation formula of the third Hall chip is constructed, wherein V _C＝K₂B_z+K_yB_y is the sum of the third multiplication formula and the fourth multiplication formula;

Based on the difference between the third multiplication formula and the fourth multiplication formula, a fourth magnetic field signal calculation formula of the fourth Hall chip is constructed, wherein V _C＝K₂B_z+K_yB_y is the sum of the third multiplication formula and the fourth multiplication formula;

And constructing a second differential voltage calculation formula V _CD＝(V_C-V_D)/2＝k_yB_y based on the difference value between the third magnetic field signal calculation formula and the fourth magnetic field signal calculation formula.

In an embodiment of the present disclosure, the determining a first differential voltage calculation formula of a first hall pair chip set and a second differential voltage calculation formula of the second hall pair chip set in the sensor element includes:

Determining an included angle sine value formula and an included angle cosine value formula according to the included angle between the horizontal magnetic field of the sensor element and the x axis;

Constructing a first differential voltage calculation formula of the first Hall pair chip set according to the included angle sine value formula and the preset gain coefficient;

and constructing a second differential voltage calculation formula of the second Hall pair chip set according to the included angle cosine value formula and the preset gain coefficient.

In the embodiment of the specification, an included angle a between the horizontal magnetic field of the sensor element and the x-axis is obtained, an included angle sine value formula cosa and an included angle cosine value formula sina are determined according to the included angle between the horizontal magnetic field of the sensor element and the x-axis, and then a first differential voltage calculation formula of the first Hall pair chip set is constructed according to the included angle sine value formula and the preset gain coefficient:

V_AB＝kB _{Horizontal level} cosa

Wherein V _AB is a first differential voltage, k is a preset gain factor, a is an included angle between the horizontal magnetic field of the sensor element and the x-axis, B _{Horizontal level} is the strength of the horizontal magnetic field signal of the sensor element, and B _{Horizontal level} cosa is B _x.

Constructing a second differential voltage calculation formula of the second Hall pair chip set according to the included angle cosine value formula and the preset gain coefficient:

V_CD＝kB _{Horizontal level} sina

Wherein V _CD is a second differential voltage, k is a preset gain factor, a is an angle between the horizontal magnetic field of the sensor element and the x-axis, and B _{Horizontal level} sina is B _y.

In the embodiment of the specification, because the two-dimensional differential Hall chips are of a completely symmetrical structure, the sensitivity gain coefficients of each group of Hall pair chips to the z-axis magnetic field of the sensor element are the same and are all preset gain coefficients k, and even if the two-dimensional differential Hall chips cannot be equal due to process factors, the two-dimensional differential Hall chips can be unified by adjusting the electrical gain in a circuit through later calibration. According to the differential voltage calculation formula constructed based on the preset gain coefficient, the calculation method of the differential voltage output by each of the two groups of Hall pair chips is simplified.

In this embodiment of the present disclosure, the determining the horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain coefficient includes:

If the analog circuit type is a square sum analog circuit, determining a first differential voltage square sum formula based on the first differential voltage calculation formula and determining a second differential voltage square sum formula based on the second differential voltage calculation formula, wherein the first differential voltage square sum formula is V _AB ², and the second differential voltage square sum formula is V _CD ²;

Calculating the product of the preset gain coefficient and the horizontal magnetic field signal to obtain a gain magnetic field signal product formula kB _{Horizontal level}

According to the sum of the first differential voltage square sum formula and the second differential voltage square sum formula, a square sum formula V _AB ²+V_CD ² is constructed;

calculating a horizontal magnetic field signal of the sensor element based on a correspondence between a square of the gain magnetic field signal product and the sum of squares formula, the calculation formula being exemplary as follows:

V_AB ²+V_CD ²＝k²B _{Horizontal level} ²

In the embodiment of the present disclosure, as shown in fig. 7, two-dimensional differential hall chips that are closely arranged and designed may be disposed on a square sum analog circuit board, and then packaged to make a two-dimensional analog element for detecting the horizontal magnetic field strength. The sum of squares of the two-dimensional differential hall chip signals is proportional to the square of the horizontal magnetic field strength. And obtaining the sensitivity coefficient of the value and the square of the magnetic field intensity through calibration. The device can be used in linear measuring systems such as current sensors, linear displacement sensors and the like, and a digital circuit is used for conditioning signals to obtain the required signals when the device is applied.

In the embodiment of the present disclosure, when the analog circuit is a square sum analog circuit, the sensor element is a linear hall sensor, and since the two sets of hall sensors simplify the calculation formulas of the differential voltages output by the chips respectively, the calculation formulas of the horizontal magnetic field signals of the sensor element determined according to the first differential voltage calculation formula and the second differential voltage calculation formula are also simplified, and the intensity information of the horizontal magnetic field signals of the sensor element corresponding to the square sum analog circuit can be obtained through simple operation.

In this embodiment of the present disclosure, the determining the horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain coefficient includes:

If the analog circuit type is an absolute value and an analog circuit, determining a first differential voltage absolute value formula I V _AB I based on the first differential voltage calculation formula, and determining a second differential voltage absolute value formula I V _CD I based on the second differential voltage calculation formula;

Constructing an absolute value sum formula I V _AB|+|V_CD I according to the sum of the first differential voltage absolute value formula and the second differential voltage absolute value formula;

Calculating the product of the preset gain coefficient and the horizontal magnetic field signal to obtain a gain magnetic field signal product formula, namely KB _{Horizontal level} ;

calculating the sum of the absolute value of the sine value and the absolute value of the cosine value to obtain an included angle and a formula of sina |+| cosa |;

calculating the product of the gain magnetic field signal product formula and the included angle sum formula to obtain a magnetic field angle product formula, wherein the magnetic field angle product formula is kB _{Horizontal level} [ sina |+| cosa |;

Calculating a horizontal magnetic field signal of the sensor element according to a correspondence between the absolute value and the magnetic field angle product formula, wherein the calculation formula is as follows:

|V_AB|+|V_CD|＝kB _{Horizontal level} 【|sina|+|cosa|】。

In the embodiment of the present specification, since the change of | sina |+| cosa | with a is small, in a scene where the accuracy requirement of the magnetic field signal is not high, the horizontal magnetic field signal of the sensor element can be quickly calculated according to the above formula.

The magnetic field signal obtained by the calculation formula has 41% fluctuation along with the change of the magnetic field angle, but can be applied to application scenes with lower requirements on signal accuracy. Such as a proximity switch, the output signal initiates an action (turning off a light or otherwise) when the detected magnetic field signal exceeds a threshold (which may be set to 1 mm). The threshold value 1 is that the magnetic fields with the intensities of 1-1.414 at all angles can be possibly caused at the same distance under the worst condition, or the distances of the magnets approaching the Hall are different when the threshold values are reached at different angles. Because the magnetic field strength and the distance are inversely proportional to square, the distance deviation caused by the strength relation of 1.414 times is only 19 percent, namely the distance difference of triggering actions of the magnet proximity switches with different angles is less than one fifth. For example, if the set threshold is 2mm, the distance between the magnet and the hall chip is 2-2.4mm when the magnet reaches the threshold at each angle. In addition, the magnet is generally fixed, and the angle of the magnetic field corresponding to the switch point is not changed greatly. It is reasonable to set it to + -10 degrees, the distance detection deviation of the overall system is less than 16% in the worst case, preferably only 2.2% (depending on the set angle). The two thresholds of the switch and the switch are pulled apart by the error deviation value. For example, in the case of a distance deviation of 10% and a magnetic field strength deviation of 21%, the approach threshold for hall opening is set to 0.8, the threshold for closing is set to 1.2, and a difference of 50% and a far smaller value than 21% does not cause false triggering, and the distance is in the range of 2-2.1mm.

In the embodiment of the specification, in an application scene with low requirement on signals, a sensor element can be constructed on an absolute value and an analog circuit, for example, the sensor element can be a two-dimensional Hall proximity switch, and the Hall proximity switch can be accurately controlled by adopting a calculation formula of absolute value summation.

In this embodiment of the present disclosure, the sensor element is an angle sensor, and determining a horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain coefficient includes:

If the analog circuit type is a division analog circuit, determining a first formula of an x-axis signal component of the horizontal magnetic field based on the first differential voltage calculation formula, wherein V _AB＝(V_A-V_B)/2＝k_xB_x is a first formula of an x-axis signal component of the horizontal magnetic field;

Determining a second formula of a y-axis signal component of the horizontal magnetic field based on the second differential voltage calculation formula, V _CD＝(V_C-V_D)/2＝k_yB_y;

based on the first formula and the second formula, a calculation formula of an included angle tangent value is constructed, wherein tan a= (k _xV_CD)/(k_yV_AB), the included angle is the angle between a horizontal magnetic field of the sensor element and the x axis;

And calculating the output angle value of the angle sensor based on a calculation formula of the included angle tangent value.

For the manufacturing method adopting lithography, the error is small enough to be negligible, and the sensor can be considered to be in ideal complete symmetry, kx=ky=k, and tan a=v _CD/V_AB.

In the embodiment of the present disclosure, when the analog circuit is a division analog circuit, since the two sets of hall pairs simplify the calculation formulas of the differential voltages output by the chips, the calculation formulas of the tangent values of the magnetic field angles of the sensor elements determined according to the first differential voltage calculation formulas and the second differential voltage calculation formulas are simplified, and the angle values of the angle sensor can be prepared by simple calculation.

In this embodiment of the present disclosure, in a case where the single magnetic layer is completely symmetrical, the x-axis gain factor is the same as the y-axis gain factor, and the angle tangent is a ratio of the second differential voltage to the first differential voltage.

In an embodiment of the present disclosure, the calculating the output angle value of the angle sensor based on the calculation formula of the angle tangent value includes:

calculating an included angle sine value based on a calculation formula of the included angle tangent value;

And carrying out table lookup or adopting an arctangent operation technology based on the sine value of the included angle to obtain the output angle value of the angle sensor.

In the embodiment of the present specification, kx and ky are equal in design, and the output signal strength coefficients of the two hall pairs are proportional to Bx and By. The function of obtaining the horizontal magnetic field strength can be realized by a simple analog circuit. The two groups of Hall pair chips and the single magnetic layer are symmetrical along the x axis and the y axis to realize that kx and ky are equal, that is, the structures of the two groups of Hall pair chips and the single magnetic layer have the characteristic of 90-degree rotation symmetry. The two groups of Hall pair chips are arranged to be symmetrical structures, and the single magnetic layer is designed to be regular polygon with even sides.

The magnetic field measuring method of the sensor element can obtain the intensity information of the horizontal magnetic field signal through simple operation, and the 2D detection of the planar magnetic field intensity with low drift, high isolation and high precision is realized through the measuring method.

Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed herein. This application is intended to cover any variations, uses, or adaptations of the application following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the application pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.

It is to be understood that the application is not limited to the precise arrangements and instrumentalities shown in the drawings, which have been described above, and that various modifications and changes may be effected without departing from the scope thereof. The scope of the application is limited only by the appended claims.

Claims (14)

1. A two-dimensional differential hall chip, comprising:

Each group of Hall pair chips comprises two Hall chips which are distributed at intervals, one group of Hall pair chips in the two groups of Hall pair chips are symmetrically arranged along the x axis of the horizontal direction, and the other group of Hall pair chips are symmetrically arranged along the y axis of the vertical direction;

the projection of the single magnetic layer on the Hall sensitive surfaces of the two groups of Hall pair chips covers the central areas of the two groups of Hall pair chips, the single magnetic layer covers at least part of the two groups of Hall pair chips, and the single magnetic layer is symmetrically arranged along the x axis and the y axis.

2. The chip of claim 1, wherein the two sets of hall pair chips comprise a first hall pair chip set and a second hall pair chip set, wherein the first hall pair chip set and the second hall pair chip set are perpendicular to each other, the first hall pair chip set comprises a first hall chip and a second hall chip, the first hall chip and the second hall chip are arranged side by side in a contactless manner, the central axis of the first hall chip along the horizontal direction and the central axis of the second hall chip along the horizontal direction are positioned on the same straight line, and the central axis of the first hall chip along the vertical direction and the central axis of the second hall chip along the vertical direction are parallel to each other;

The single magnetic layer covers at least part of the first Hall chip and at least part of the second Hall chip, and the coverage area of the single magnetic layer on the first Hall chip is equal to the coverage area of the single magnetic layer on the second Hall chip.

3. The chip of claim 2, wherein the second Hall pair chip set comprises a third Hall chip and a fourth Hall chip, wherein the third Hall chip and the fourth Hall chip are arranged side by side in a contactless manner, the central axis of the third Hall chip along the horizontal direction is parallel to the central axis of the fourth Hall chip along the horizontal direction, and the central axis of the third Hall chip along the vertical direction and the central axis of the fourth Hall chip along the vertical direction are positioned on the same straight line;

The single magnetic layer covers at least part of the third Hall chip and at least part of the fourth Hall chip, and the coverage area of the single magnetic layer on the third Hall chip is equal to the coverage area of the single magnetic layer on the fourth Hall chip.

4. The chip of claim 3, wherein the first hall chip is disposed opposite to the third hall chip, the second hall chip is disposed opposite to the fourth hall chip, the two hall chips disposed opposite to each other are electrically connected in parallel and differentially, the first hall pair chip set is configured to detect a magnetic field in a horizontal direction, and the second hall pair chip set is configured to detect a magnetic field in a vertical direction.

5. The chip of claim 3, wherein a predetermined area is formed between the first hall chip, the second hall chip, the third hall chip, and the fourth hall chip, and wherein the single magnetic focusing layer covers the predetermined area.

6. The chip of claim 3, wherein the ratio of the area covered by the single magnetic layer on each hall chip to the area of each hall chip is 1 (1-10).

7. The chip of claim 3, wherein a distance between edges of two hall chips in each set of the hall pair chips is 5-500 microns, and the thickness of the single magnetic layer is 5-500 microns.

8. The chip of claim 1, wherein the single magnetic layer is an even number of polygons, circles, ovals, or stars with an even number of corners.

9. A sensor element comprising a substrate, a first electrode, a second electrode, and a first electrode, characterized by comprising the following steps:

a preset analog circuit board and the two-dimensional differential hall chip according to any one of claims 1 to 8 provided on the preset analog circuit board;

And the connecting line of the central points of the two Hall chips along the x-axis direction in the two-dimensional differential Hall chips is perpendicular to the current direction of the preset analog circuit board.

10. A method of measuring a magnetic field of a sensor element, wherein the sensor element is the sensor element of claim 9, the method comprising:

Determining a first differential voltage calculation formula of a first Hall pair chip set in the sensor element and a second differential voltage calculation formula of the second Hall pair chip set;

Determining the sensitivity gain coefficient of each group of Hall pair chips to the z-axis magnetic field of the sensor element to obtain a preset gain coefficient;

determining the type of an analog circuit corresponding to a preset analog circuit board in the sensor element;

And determining a horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type and the preset gain coefficient.

11. The method of claim 10, wherein the determining a first differential voltage calculation formula for a first hall pair chip set and a second differential voltage calculation formula for the second hall pair chip set in the sensor element comprises:

Determining an included angle sine value formula and an included angle cosine value formula according to the included angle between the horizontal magnetic field of the sensor element and the x axis;

Constructing a first differential voltage calculation formula of the first Hall pair chip set according to the included angle sine value formula and the preset gain coefficient;

and constructing a second differential voltage calculation formula of the second Hall pair chip set according to the included angle cosine value formula and the preset gain coefficient.

12. The method of claim 10, wherein the determining the horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain factor comprises:

If the analog circuit type is a square sum analog circuit, determining a first differential voltage square sum formula based on the first differential voltage calculation formula, and determining a second differential voltage square sum formula based on the second differential voltage calculation formula;

Calculating the product of the preset gain coefficient and the horizontal magnetic field signal to obtain a gain magnetic field signal product formula;

Constructing a square sum formula according to the sum of the first differential voltage square sum formula and the second differential voltage square sum formula;

And calculating the horizontal magnetic field signal of the sensor element according to the corresponding relation between the square of the gain magnetic field signal product and the square sum formula.

13. The method of claim 10, wherein the determining the horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain factor comprises:

If the analog circuit type is an absolute value and analog circuit, determining a first differential voltage absolute value formula based on the first differential voltage calculation formula, and determining a second differential voltage absolute value formula based on the second differential voltage calculation formula;

constructing an absolute value sum formula according to the sum of the first differential voltage absolute value formula and the second differential voltage absolute value formula;

Calculating the product of the preset gain coefficient and the horizontal magnetic field signal to obtain a gain magnetic field signal product formula;

obtaining an included angle sum formula according to the sum of the absolute value of the included angle sine value formula and the absolute value of the included angle cosine value formula;

Calculating the product of the gain magnetic field signal product formula and the included angle sum formula to obtain a magnetic field angle product formula;

And calculating the horizontal magnetic field signal of the sensor element according to the corresponding relation between the absolute value sum formula and the magnetic field angle product formula.

14. The method of claim 10, wherein the sensor element is an angle sensor, and wherein the determining the horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain factor comprises:

if the analog circuit type is a division analog circuit, determining a first formula of an x-axis signal component of the horizontal magnetic field based on the first differential voltage calculation formula;

determining a second formula of a y-axis signal component of the horizontal magnetic field based on the second differential voltage calculation formula;

Constructing a calculation formula of an included angle tangent value based on the first formula and the second formula, wherein the included angle is an angle between a horizontal magnetic field of the sensor element and the x-axis;

And calculating the output angle value of the angle sensor based on a calculation formula of the included angle tangent value.