CN119626775A - Electronic device, capacitor assembly packaging structure, capacitor structure and manufacturing method thereof - Google Patents
Electronic device, capacitor assembly packaging structure, capacitor structure and manufacturing method thereof Download PDFInfo
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- CN119626775A CN119626775A CN202311172664.1A CN202311172664A CN119626775A CN 119626775 A CN119626775 A CN 119626775A CN 202311172664 A CN202311172664 A CN 202311172664A CN 119626775 A CN119626775 A CN 119626775A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 236
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 251
- 229910052709 silver Inorganic materials 0.000 claims abstract description 221
- 239000004332 silver Substances 0.000 claims abstract description 221
- 239000000463 material Substances 0.000 claims abstract description 64
- 239000003822 epoxy resin Substances 0.000 claims abstract description 19
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims description 421
- 239000011888 foil Substances 0.000 claims description 74
- 229910052751 metal Inorganic materials 0.000 claims description 70
- 239000002184 metal Substances 0.000 claims description 70
- 229920001940 conductive polymer Polymers 0.000 claims description 45
- 239000004094 surface-active agent Substances 0.000 claims description 25
- 229910052799 carbon Inorganic materials 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 238000005245 sintering Methods 0.000 claims description 13
- 239000002563 ionic surfactant Substances 0.000 claims description 8
- 239000002736 nonionic surfactant Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 239000012790 adhesive layer Substances 0.000 claims description 3
- 238000005253 cladding Methods 0.000 claims 6
- 239000011248 coating agent Substances 0.000 claims 6
- 238000000576 coating method Methods 0.000 claims 6
- 238000000034 method Methods 0.000 description 18
- 239000004593 Epoxy Substances 0.000 description 9
- 238000002156 mixing Methods 0.000 description 6
- 229920000128 polypyrrole Polymers 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229920000265 Polyparaphenylene Polymers 0.000 description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- -1 poly(p-phenylene) Polymers 0.000 description 4
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 4
- 229920001197 polyacetylene Polymers 0.000 description 4
- 229920000767 polyaniline Polymers 0.000 description 4
- 229920000123 polythiophene Polymers 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920006389 polyphenyl polymer Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention provides an electronic device, a capacitor assembly packaging structure, a capacitor structure and a manufacturing method thereof. The capacitor assembly package structure includes a capacitor assembly, an insulating package, and an electrode assembly. The capacitor assembly comprises a plurality of capacitor structures which are stacked and electrically connected with each other. The insulating package is configured to encase a plurality of capacitor structures. The electrode assembly includes a first electrode structure and a second electrode structure. Each capacitor structure includes a sintered silver layer, and the sintered silver layer includes 95% or more pure silver material. The average thickness of the sintered silver layer is less than or equal to 1 mu m, and the resistivity of the sintered silver layer is less than the resistivity of silver paste mixed by epoxy resin and silver powder, thereby reducing the equivalent series resistance of the capacitor component packaging structure.
Description
Technical Field
The present invention relates to a capacitor, and more particularly, to an electronic device using a capacitor assembly package structure, a capacitor structure and a method for manufacturing the same.
Background
Capacitors have been widely used in basic components of consumer home appliances, computer boards and their peripherals, power supplies, communication products, automobiles, etc., and their main roles include filtering, bypassing, rectifying, coupling, decoupling, phase inversion, etc., to become one of the indispensable components in electronic products. The capacitor includes aluminum electrolytic capacitor, tantalum electrolytic capacitor, laminated ceramic capacitor, thin film capacitor, etc. according to different materials and applications. In the prior art, the solid electrolytic capacitor has the advantages of small size, large capacitance, excellent frequency characteristic and the like, and can be applied to the decoupling function of the power circuit of the central processing unit. Generally, a stack of a plurality of capacitor units is used to form a high-capacitance solid electrolytic capacitor, and the stacked solid electrolytic capacitor in the prior art includes a plurality of capacitor units and a lead frame, wherein each capacitor unit includes an anode portion, a cathode portion and an insulating portion, and the anode portion and the cathode portion are electrically insulated from each other by the insulating portion. In particular, the cathode portions of the capacitor cells are stacked on each other, and the plurality of capacitor cells can be electrically connected to each other by providing a conductive layer between two adjacent capacitor cells. However, the stack capacitor in the prior art still has room for improvement.
Disclosure of Invention
The present invention provides an electronic device, a capacitor device package structure, a capacitor structure and a method for manufacturing the same, which can be used for reducing or maintaining an Equivalent series resistance (Equivalent SERIES RESISTANCE, ESR) of the capacitor device package structure.
In order to solve the above-mentioned problems, one of the technical means adopted by the present invention is to provide a capacitor device package structure, which comprises a capacitor device, an insulating package body and an electrode device. The capacitor assembly comprises a plurality of capacitor structures which are stacked and electrically connected with each other, and each capacitor structure is provided with a positive electrode part and a negative electrode part. The insulating package is configured to encase a plurality of capacitor structures. The electrode assembly comprises a first electrode structure and a second electrode structure, wherein the first electrode structure is mutually matched with the insulating packaging body and is electrically connected to the positive electrode part of the capacitor structure, and the second electrode structure is mutually matched with the insulating packaging body and is electrically connected to the negative electrode part of the capacitor structure. Wherein each capacitor structure comprises a sintered silver layer, and the sintered silver layer comprises more than 95% of pure silver material, wherein the average thickness of the sintered silver layer is less than or equal to 1 μm, and the resistivity of the sintered silver layer is less than the resistivity of silver paste mixed by epoxy resin and silver powder.
In order to solve the above-mentioned problems, another technical means adopted by the present invention is to provide a capacitor structure, and the capacitor structure is applied to a capacitor assembly packaging structure. Wherein the capacitor structure comprises a sintered silver layer, and the sintered silver layer comprises more than 95% of pure silver material, wherein the average thickness of the sintered silver layer is less than or equal to 1 μm, and the resistivity of the sintered silver layer is less than the resistivity of silver paste mixed by epoxy resin and silver powder.
In order to solve the above-mentioned problems, another technical means of the present invention is to provide an electronic device, which uses a capacitor assembly package structure, wherein the capacitor assembly package structure includes a capacitor assembly, an insulating package and an electrode assembly. The capacitor assembly comprises a plurality of capacitor structures which are stacked and electrically connected with each other, and each capacitor structure is provided with a positive electrode part and a negative electrode part. The insulating package is configured to encase a plurality of capacitor structures. The electrode assembly comprises a first electrode structure and a second electrode structure, wherein the first electrode structure is mutually matched with the insulating packaging body and is electrically connected to the positive electrode part of the capacitor structure, and the second electrode structure is mutually matched with the insulating packaging body and is electrically connected to the negative electrode part of the capacitor structure. Wherein each capacitor structure comprises a sintered silver layer, and the sintered silver layer comprises more than 95% of pure silver material, wherein the average thickness of the sintered silver layer is less than or equal to 1 μm, and the resistivity of the sintered silver layer is less than the resistivity of silver paste mixed by epoxy resin and silver powder.
In one possible or preferred embodiment, the method for fabricating the capacitor structure includes providing a metal foil, forming an insulating surrounding layer to be circumferentially disposed on a first portion of the metal foil, forming a conductive polymer layer to cover the first portion of the metal foil and contact the insulating surrounding layer, forming a carbon paste layer to cover the conductive polymer layer and contact the insulating surrounding layer, forming a silver material layer to cover the carbon paste layer and contact the insulating surrounding layer, and sintering the silver material layer to form a sintered silver layer, wherein the sintered silver layer covers the carbon paste layer and contacts the insulating surrounding layer. The silver material layer comprises a surfactant, pure silver material and the surfactant are mixed with each other, the surfactant is an ionic surfactant or a nonionic surfactant, the average thickness of the sintered silver layer is between 100nm and 1000nm, and the resistivity of the sintered silver layer is between 1X 10 -5 omega cm and 1X 10 -6 omega cm, so that the equivalent series resistance of the capacitor component packaging structure is reduced or maintained.
In one possible or preferred embodiment, the method of fabricating the capacitor structure includes providing a metal foil, forming an insulating surrounding layer to be circumferentially disposed on a first portion of the metal foil, forming a conductive polymer layer to cover the first portion of the metal foil and contact the insulating surrounding layer, forming a silver material layer to cover the conductive polymer layer and contact the insulating surrounding layer, and sintering the silver material layer to form a sintered silver layer, wherein the sintered silver layer covers the conductive polymer layer and contacts the insulating surrounding layer. The silver material layer comprises a surfactant, pure silver material and the surfactant are mixed with each other, the surfactant is an ionic surfactant or a nonionic surfactant, the average thickness of the sintered silver layer is between 100nm and 1000nm, and the resistivity of the sintered silver layer is between 1X 10 -5 omega cm and 1X 10 -6 omega cm, so that the equivalent series resistance of the capacitor component packaging structure is reduced or maintained.
One of the advantages of the present invention is that the capacitor element package structure provided by the present invention can be used for reducing or maintaining the equivalent series resistance of the capacitor element package structure in the case that the capacitor element includes a plurality of capacitor structures stacked and electrically connected to each other, the insulating package is configured to cover the plurality of capacitor structures, each of the capacitor structures includes a sintered silver layer, and the sintered silver layer includes more than 95% of pure silver material, such that the average thickness of the sintered silver layer is less than or equal to 1 μm and the resistivity of the sintered silver layer is less than the resistivity of the silver paste mixed by the epoxy resin and the silver powder.
One of the advantages of the present invention is that the capacitor structure provided by the present invention can be used for reducing or maintaining the equivalent series resistance of the capacitor component packaging structure in the case that the average thickness of the sintered silver layer is less than or equal to 1 μm and the resistivity of the sintered silver layer is less than the resistivity of the silver paste formed by mixing the epoxy resin and the silver powder by the technical scheme that the capacitor structure comprises a sintered silver layer and the sintered silver layer comprises more than 95% pure silver material.
The method for manufacturing the capacitor structure has the advantages that the method can be used for reducing or maintaining the equivalent series resistance of the capacitor component packaging structure under the conditions that an insulating surrounding layer is formed so as to be circumferentially arranged on a first part of a metal foil, a conductive polymer layer is formed so as to cover the first part of the metal foil and contact the insulating surrounding layer, a carbon adhesive layer is formed so as to cover the conductive polymer layer and contact the insulating surrounding layer, a silver material layer is formed so as to cover a carbon adhesive layer and contact the insulating surrounding layer, and the silver material layer is sintered so as to form a sintered silver layer, so that the average thickness of the sintered silver layer is smaller than or equal to 1 mu m and the resistivity of the sintered silver layer is smaller than the resistivity of silver adhesive formed by mixing epoxy resin and silver powder.
The manufacturing method of the capacitor structure provided by the invention has the beneficial effects that the technical scheme of forming an insulating surrounding layer to be circumferentially arranged on a first part of a metal foil, forming a conductive polymer layer to cover the first part of the metal foil and contact with the insulating surrounding layer, forming a silver material layer to cover the conductive polymer layer and contact with the insulating surrounding layer and sintering the silver material layer to form a sintered silver layer can be used for reducing or maintaining the equivalent series resistance of the capacitor component packaging structure under the conditions that the average thickness of the sintered silver layer is smaller than or equal to 1 mu m and the resistivity of the sintered silver layer is smaller than that of silver paste mixed by epoxy resin and silver powder.
One of the advantages of the present invention is that the electronic device provided by the present invention can be used for reducing or maintaining the equivalent series resistance of the capacitor assembly packaging structure in the case that the capacitor assembly includes a plurality of capacitor structures stacked and electrically connected to each other, the insulating package is configured to cover the plurality of capacitor structures, each of the capacitor structures includes a sintered silver layer, and the sintered silver layer includes more than 95% pure silver material, such that the average thickness of the sintered silver layer is less than or equal to 1 μm and the resistivity of the sintered silver layer is less than the resistivity of the silver paste mixed by the epoxy resin and the silver powder.
For a further understanding of the nature and the technical aspects of the present invention, reference should be made to the following detailed description of the invention and the accompanying drawings, which are provided for purposes of reference only and are not intended to limit the invention.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a capacitor structure according to a first embodiment and a fifth embodiment of the present invention.
Fig. 2 is a schematic diagram of steps S100 to S106 of a method for fabricating a capacitor structure according to a first embodiment of the present invention.
Fig. 3 is an enlarged schematic view of section III of fig. 2.
Fig. 4 is a schematic diagram of step S108 of a method for fabricating a capacitor structure according to a first embodiment of the present invention.
Fig. 5 is an enlarged schematic view of the V portion of fig. 4.
Fig. 6 is a schematic cross-sectional view of a capacitor assembly package structure according to a second embodiment of the present invention.
Fig. 7 is a schematic cross-sectional view of a capacitor assembly package structure according to a third embodiment of the present invention.
Fig. 8 is a schematic cross-sectional view of a capacitor assembly package structure according to a fourth embodiment of the present invention.
Fig. 9 is a schematic diagram of steps S200 to S208 of a method for fabricating a capacitor structure according to a fifth embodiment of the present invention.
Fig. 10 is a schematic diagram of step S210 of a method for fabricating a capacitor structure according to a fifth embodiment of the present invention.
Fig. 11 is a functional block diagram of an electronic device according to a sixth embodiment of the present invention.
Detailed Description
The following specific embodiments are provided to illustrate the embodiments of the present invention related to an electronic device, a capacitor assembly package structure, a capacitor structure and a method for manufacturing the same, and those skilled in the art will appreciate the advantages and effects of the present invention from the disclosure of the present invention. The invention is capable of other and different embodiments and its several details are capable of modification and variation in various respects and all without departing from the spirit of the present invention. It should be noted that the drawings of the present invention are merely schematic illustrations, and are not drawn to actual dimensions. The following embodiments will further illustrate the related art content of the present invention in detail, but the disclosure is not intended to limit the scope of the present invention. In addition, the term "or" as used herein shall include any one or combination of more of the associated listed items as the case may be.
First embodiment
Referring to fig. 1 to 5, a first embodiment of the present invention provides a method for manufacturing a capacitor structure, which includes providing a metal foil 100 (step S100) according to fig. 1 and 2, forming an insulating surrounding layer 101 (or an insulating stopper layer) according to fig. 1 and 2 to be circumferentially disposed on a first portion 100A of the metal foil 100 (step S102), forming a conductive polymer layer 102 according to fig. 1 and 2 to cover the first portion 100A of the metal foil 100 and contact the insulating surrounding layer 101 (step S104), forming a silver material layer 104R (e.g. nano silver material layer) according to fig. 1, 2 and 3 to cover the conductive polymer layer 102 and contact the insulating surrounding layer 101 (step S106), and finally sintering (sintering) the silver material layer 104R according to fig. 2 according to fig. 1, 2 and 5 to form a sintered silver layer 104 (step S108) to cover the conductive polymer layer 102 and contact the insulating surrounding layer 101. For example, the metal foil 100 may be an aluminum foil, a copper foil, or any kind of conductive foil, and the surface of the metal foil 100 has an etching layer and an oxide layer formed on the etching layer. In addition, the insulating surrounding layer 101 may be a silicon gel (silicone), an epoxy (epoxy), or any kind of insulating material. The conductive polymer layer 102 may be polyacetylene (PA)、polypyrrole(PPy)、polythiophene(PT)、polyaniline(PANI)、poly(p-phenylene)(PPP)、poly(phenylene vinylene)(PPV), or the conductive polymer layer 102 may be polyphenylene sulfide, polypyrrole, polythiophene, polyphenyl, polythiazole, or the like. However, the above examples are only one possible embodiment and are not intended to limit the present invention.
It is noted that, for example, as shown in fig. 3, the silver material layer 104R may include a surfactant 1040, and the pure silver material 1041 (e.g., a plurality of pure nano silver particles) and the surfactant 1040 may be mixed with each other to form a nano silver paste. In addition, in the step S106 of sintering the silver material layer 104R to form the sintered silver layer 104, the surfactant 1040 of the silver material layer 104R may be completely removed to leave only a plurality of pure silver materials 1041, or most of the surfactant 1040 of the silver material layer 104R may be removed to leave a plurality of pure silver materials 1041 exceeding 95% (that is, the pure silver materials 1041 account for more than 95% by weight or volume of the sintered silver layer 104, while the rest may have a small amount of surfactant or C, H, O or the like as a residue). In addition, the surfactant 1040 may be an ionic surfactant (ionic surfactant) or a nonionic surfactant (non-ionic surfactant). However, the above examples are only one possible embodiment and are not intended to limit the present invention.
Thus, in conjunction with fig. 4 and 5, a capacitor structure 10 (or referred to as a capacitor element) formed by a method for forming a capacitor structure according to a first embodiment of the present invention includes a metal foil 100, an insulating surrounding layer 101, a conductive polymer layer 102, and a sintered silver layer 104. Further, the capacitor structure 10 has a positive electrode portion P and a negative electrode portion N. The insulating surrounding layer 101 is configured to be circumferentially disposed on the first portion 100A of the metal foil 100, but not to contact the second portion 100B of the metal foil 100 by blocking of the insulating surrounding layer 101. The conductive polymer layer 102 is configured to encapsulate the first portion 100A of the metal foil 100 and contact the insulating surrounding layer 101, but not the second portion 100B of the metal foil 100 by the barrier of the insulating surrounding layer 101. The sintered silver layer 104 is configured to encapsulate the conductive polymer layer 102 and contact the insulating surrounding layer 101, but not the second portion 100B of the metal foil 100 by the barrier of the insulating surrounding layer 101. Notably, the sintered silver layer 104 includes more than 95% pure silver material (e.g., is composed of a nano silver material or a plurality of pure silver materials 1041), so the sintered silver layer 104 may also be referred to as a sintered nano silver layer (SILVER LAYER) or a sintered nano silver film (SILVER THIN FILM). In addition, the average thickness of the sintered silver layer 104 may be less than or equal to 1 μm (or any positive integer less than or equal to 1 μm) (that is, the overall thickness of the capacitor element package structure S may be reduced and the number of stacked layers of the plurality of capacitor structures 10 may be increased), and the resistivity of the sintered silver layer 104 may be less than the resistivity of the silver paste (i.e., the silver paste that is not sintered) that is mixed with the silver powder by the epoxy. For example, since the average thickness of the sintered silver layer 104 is between 100nm and 1000nm (or any positive integer between 100nm and 1000 nm), and the resistivity of the sintered silver layer 104 is between 1×10 -5 Ω·cm and 1×10 -6 Ω·cm (or between r×10 -5 Ω·cm and r×10 -6 Ω·cm, where R can be any number), the present invention can effectively reduce the equivalent series resistance of the capacitor component packaging structure S, or to maintain the equivalent series resistance of the capacitor component packaging structure S, by the sintered silver layer 104. Therefore, even if the average thickness of the sintered silver layer 104 is reduced, the equivalent series resistance of the capacitor element package structure S is not increased (that is, even if the average thickness of the sintered silver layer 104 is reduced, the equivalent series resistance of the capacitor element package structure S using the sintered silver layer 104 can be maintained to be the same as the equivalent series resistance of the capacitor element package structure using the silver paste mixed with the epoxy resin and the silver powder).
Second embodiment
Referring to fig. 6, a first embodiment of the present invention provides a capacitor assembly packaging structure S, which includes a capacitor assembly 1, an insulating package 2, and an electrode assembly 3. That is, the plurality of capacitor structures 10 manufactured by the method for manufacturing a capacitor structure according to the first embodiment of the present invention can be applied to a capacitor element package structure S.
First, as shown in fig. 4 and 6, the capacitor assembly 1 includes a plurality of capacitor structures 10 stacked and electrically connected to each other, each capacitor structure 10 has a positive electrode portion P and a negative electrode portion N, and each capacitor structure 10 includes a metal foil 100, an insulating surrounding layer 101, a conductive polymer layer 102 and a sintered silver layer 104. Further, as shown in fig. 4, the insulating surrounding layer 101 is configured to be circumferentially disposed on a first portion 100A of the metal foil 100, the conductive polymer layer 102 is configured to cover the first portion 100A of the metal foil 100 and contact the insulating surrounding layer 101, and the sintered silver layer 104 is configured to cover the conductive polymer layer 102 and contact the insulating surrounding layer 101. In addition, the sintered silver layer 104 is the outermost layer of the capacitor structure 10, and two sintered silver layers 104 of two adjacent capacitor structures 10 may be electrically connected to each other by a conductive material M (or without any conductive material). In addition, a second portion 100B of the metal foil 100 of each capacitor structure 10 is not covered by the insulating surrounding layer 101, and a plurality of second portions 100B of the plurality of metal foils 100 of the plurality of capacitor structures 10 may be stacked. However, the above examples are only one possible embodiment and are not intended to limit the present invention.
Further, as shown in fig. 6, the insulating package 2 is configured to encase a plurality of capacitor structures 10. For example, the insulating package 2 may be a silicone, an epoxy, or any kind of insulating material. However, the above examples are only one possible embodiment and are not intended to limit the present invention.
Furthermore, as shown in fig. 6, the electrode assembly 3 includes a first electrode structure 31 and a second electrode structure 32. The first electrode structure 31 is mutually matched with the insulating package 2 and is electrically connected to the positive electrode portion P of the capacitor structure 10, the second electrode structure 32 is mutually matched with the insulating package 2 and is electrically connected to the negative electrode portion N of the capacitor structure 10, and the electrode assembly 3 may be a conductive lead assembly (LEAD FRAME assembly). Further, when the electrode assembly 3 is a conductive lead assembly, the first electrode structure 31 of the electrode assembly 3 includes a first buried portion 311 covered by the insulating package 2 and a first exposed portion 312 connected to the first buried portion 311 and exposed outside the insulating package 2, the first buried portion 311 (which may be made of a conductive material) of the first electrode structure 31 is electrically connected to the positive electrode portion P of the capacitor structure 10, and the first exposed portion 312 of the first electrode structure 31 extends along the outer surface of the insulating package 2. In addition, when the electrode assembly 3 is a conductive lead assembly, the second electrode structure 32 of the electrode assembly 3 includes a second embedded portion 321 covered by the insulating package 2 and a second exposed portion 322 connected to the second embedded portion 321 and exposed outside the insulating package 2, the second embedded portion 321 of the second electrode structure 32 is electrically connected (via a conductive material) to the negative electrode portion N of the capacitor structure 10, and the second exposed portion 322 of the second electrode structure 32 extends along the outer surface of the insulating package 2.
Third embodiment
Referring to fig. 7, a third embodiment of the present invention provides a capacitor assembly packaging structure S, which includes a capacitor assembly 1, an insulating package 2, and an electrode assembly 3. As can be seen from a comparison of fig. 7 and fig. 6, the main difference between the third embodiment and the second embodiment of the present invention is that in the third embodiment, the electrode assembly 3 may be a side end electrode assembly (LATERAL TERMINAL assembly), and the second portions 100B of the metal foils 100 of the capacitor structures 10 are separated from each other. Further, when the electrode assembly 3 is a side-end electrode assembly, the first electrode structure 31 of the electrode assembly 3 includes a first inner conductive layer 313 configured to cover a first side end 21P of the insulating package 2 and electrically connected to the positive electrode P of the capacitor structure 10, a first middle conductive layer 314 configured to cover the first inner conductive layer 313, and a first outer conductive layer 315 configured to cover the first middle conductive layer 314. In addition, when the electrode assembly 3 is a side-end electrode assembly, the second electrode structure 32 of the electrode assembly 3 includes a second inner conductive layer 323 configured to cover a second side end 22P of the insulating package 2 and electrically connected to the negative electrode portion N of the capacitor structure 10, a second intermediate conductive layer 324 configured to cover the second inner conductive layer 323, and a second outer conductive layer 325 configured to cover the second intermediate conductive layer 324. For example, the first inner conductive layer 313 may be one of an Ag layer and a Cu layer, the first intermediate conductive layer 314 may be a Ni layer, and the first outer conductive layer 315 may be a Sn layer. The second inner conductive layer 323 may be one of an Ag layer and a Cu layer, the second intermediate conductive layer 324 may be a Ni layer, and the second outer conductive layer 325 may be a Sn layer. However, the above examples are only one possible embodiment and are not intended to limit the present invention.
Fourth embodiment
Referring to fig. 8, a fourth embodiment of the present invention provides a capacitor assembly packaging structure S, which includes a capacitor assembly 1, an insulating package 2, and an electrode assembly 3. As can be seen from comparing fig. 8 and fig. 7, the main difference between the fourth embodiment and the third embodiment is that, in the fourth embodiment, when the electrode assembly 3 is a side-end electrode assembly, the plurality of capacitor structures 10 can be carried by a conductive carrier substrate 33, and the negative electrode portion N of the capacitor structure 10 can be electrically connected to the second electrode structure 32 of the electrode assembly 3 through the conductive carrier substrate 33.
Fifth embodiment
Referring to fig. 1, 9 and 10, a fifth embodiment of the present invention provides a method for manufacturing a capacitor structure, which includes providing a metal foil 100 (step S200) according to fig. 1 and 9, forming an insulating surrounding layer 101 to be circumferentially disposed on a first portion 100A of the metal foil 100 (step S202) according to fig. 1 and 9, forming a conductive polymer layer 102 to cover the first portion 100A of the metal foil 100 and contact the insulating surrounding layer 101 (step S204) according to fig. 1 and 9, forming a carbon glue layer 103 to cover the conductive polymer layer 102 and contact the insulating surrounding layer 101 (step S206) according to fig. 1 and 9, forming a silver material layer 104R to cover the carbon glue layer 103 and contact the insulating surrounding layer 101 (step S208) according to fig. 1 and 9, and finally sintering (sintering) the silver material layer 104R of fig. 9 to form a sintered layer 104 (step S210) of the silver material layer 104 and contact the insulating surrounding layer 101 according to fig. 1 and 9. For example, the metal foil 100 may be an aluminum foil, a copper foil, or any kind of conductive foil, and the surface of the metal foil 100 has an etching layer and an oxide layer formed on the etching layer. In addition, the insulating surrounding layer 101 may be a silicon gel (silicone), an epoxy (epoxy), or any kind of insulating material. The conductive polymer layer 102 may be polyacetylene (PA)、polypyrrole(PPy)、polythiophene(PT)、polyaniline(PANI)、poly(p-phenylene)(PPP)、poly(phenylene vinylene)(PPV), or the conductive polymer layer 102 may be polyphenylene sulfide, polypyrrole, polythiophene, polyphenyl, polythiazole, or the like. However, the above examples are only one possible embodiment and are not intended to limit the present invention.
It is noted that, for example, as shown in fig. 3, the silver material layer 104R may include a surfactant 1040 (surfactant), and pure silver material 1041 (e.g. a plurality of pure nano silver particles) and the surfactant 1040 may be mixed with each other to form a nano silver paste. In addition, in the step S210 of sintering the silver material layer 104R to form the sintered silver layer 104, the surfactant 1040 of the silver material layer 104R may be completely removed to leave only a plurality of pure silver materials 1041, or most of the surfactant 1040 of the silver material layer 104R may be removed to leave a plurality of pure silver materials 1041 exceeding 95% (that is, the pure silver materials 1041 account for more than 95% by weight or volume of the sintered silver layer 104, while the rest may have a small amount of surfactant or C, H, O or the like as a residue). In addition, the surfactant 1040 may be an ionic surfactant (ionic surfactant) or a nonionic surfactant (non-ionic surfactant). However, the above examples are only one possible embodiment and are not intended to limit the present invention.
Accordingly, as shown in fig. 10, the capacitor structure 10 manufactured by the method for manufacturing a capacitor structure according to the fifth embodiment of the present invention includes a metal foil 100, an insulating surrounding layer 101, a conductive polymer layer 102, a carbon glue layer 103 and a sintered silver layer 104. Further, the capacitor structure 10 has a positive electrode portion P and a negative electrode portion N. The insulating surrounding layer 101 is configured to be circumferentially disposed on the first portion 100A of the metal foil 100, but not to contact the second portion 100B of the metal foil 100 by blocking of the insulating surrounding layer 101. The conductive polymer layer 102 is configured to encapsulate the first portion 100A of the metal foil 100 and contact the insulating surrounding layer 101, but not the second portion 100B of the metal foil 100 by the barrier of the insulating surrounding layer 101. The carbon glue layer 103 is configured to encapsulate the conductive polymer layer 102 and contact the insulating surrounding layer 101, but not the second portion 100B of the metal foil 100 by blocking of the insulating surrounding layer 101. The sintered silver layer 104 is configured to encapsulate the carbon paste layer 103 and contact the insulating surrounding layer 101, but not the second portion 100B of the metal foil 100 by the barrier of the insulating surrounding layer 101. It is noted that as shown in fig. 3, more than 95% of the sintered silver layer 104 is composed of a plurality of pure silver materials 1041. In addition, the average thickness of the sintered silver layer 104 may be less than or equal to 1 μm, and the resistivity of the sintered silver layer 104 may be less than the resistivity of the silver paste (i.e., the non-sintered silver paste) mixed with the epoxy and the silver powder. For example, since the average thickness of the sintered silver layer 104 is less than or equal to 1 μm (that is, the overall thickness of the capacitor element packaging structure S can be reduced and the number of stacked layers of the plurality of capacitor element packaging structures 10 can be increased), and the resistivity of the sintered silver layer 104 is less than the resistivity of the silver paste (that is, the non-sintered silver paste) that is "mixed with the epoxy resin and the silver powder", the equivalent series resistance of the capacitor element packaging structure S can be effectively reduced by the sintered silver layer 104.
Sixth embodiment
Referring to fig. 11, a sixth embodiment of the present invention provides an electronic device E using the capacitor assembly packaging structure S according to any one of the second to fourth embodiments. For example, the electronic device E may be a portable electronic device (e.g., a desktop computer, a notebook computer, or a tablet computer) or a mobile device (e.g., any vehicle such as a vehicle, a ship, an airplane, etc.). However, the above examples are only one possible embodiment and are not intended to limit the present invention.
Advantageous effects of the embodiment
One of the advantages of the present invention is that the capacitor device package structure S provided by the present invention can be used to reduce or maintain the equivalent series resistance of the capacitor device package structure S by the technical scheme that the capacitor device 1 includes a plurality of capacitor structures 10 stacked and electrically connected with each other, the insulating package 2 is configured to cover the plurality of capacitor structures 10, each capacitor structure 10 includes a sintered silver layer 104, and more than 95% of the sintered silver layer 104 is made of a plurality of pure silver materials 1041, so that the average thickness of the sintered silver layer 104 is less than or equal to 1 μm (that is, the overall thickness of the capacitor device package structure S can be reduced, and the number of stacked layers of the plurality of capacitor structures 10 can be increased), and the resistivity of the sintered silver layer 104 is less than the resistivity of the silver paste (that is, the non-sintered silver paste) formed by mixing the epoxy resin and the silver powder.
One of the advantages of the present invention is that the capacitor structure 10 provided by the present invention can be used to reduce or maintain the equivalent series resistance of the capacitor device packaging structure S in the case that the capacitor structure 10 includes a sintered silver layer 104 and more than 95% of the sintered silver layer 104 is made up of a plurality of pure silver materials 1041, so that the average thickness of the sintered silver layer 104 is less than or equal to 1 μm (that is, the overall thickness of the capacitor device packaging structure S can be reduced, and the number of stacked layers of the capacitor structure 10 can be increased), and the resistivity of the sintered silver layer 104 is less than the resistivity of the silver paste (that is, the silver paste formed by mixing epoxy and silver powder).
One of the advantages of the present invention is that the method for manufacturing the capacitor structure 10 provided by the present invention can be used to reduce or maintain the equivalent resistance of the capacitor package structure S in the case that the average thickness of the sintered silver layer 104 is less than or equal to 1 μm (that is, the overall thickness of the capacitor package structure S can be reduced, and the number of stacked layers of the capacitor structures 10 can be increased) and the resistivity of the sintered silver layer 104 is less than the resistivity of the silver paste (non-sintered silver paste) mixed by the epoxy resin and silver powder, by forming an insulating surrounding layer 101, forming a conductive polymer layer 102 and contacting the insulating surrounding layer 101, forming a silver material layer, and sintering the silver material layer to form a sintered silver layer 104, by forming an insulating surrounding layer 101, so that the average thickness of the sintered silver layer 104 is less than or equal to 1 μm (that is, the number of stacked layers of the capacitor package structure S can be increased).
One of the advantages of the present invention is that the method for manufacturing the capacitor structure 10 according to the present invention can be used to reduce or maintain the equivalent series resistance of the capacitor element packaging structure S by forming an insulating surrounding layer 101 to be circumferentially disposed on a first portion 100A of the metal foil 100, forming a conductive polymer layer 102 to cover the first portion 100A of the metal foil 100 and contact the insulating surrounding layer 101, forming a silver material layer to cover the conductive polymer layer 102 and contact the insulating surrounding layer 101, and sintering the silver material layer to form a sintered silver layer 104 "when the average thickness of the sintered silver layer 104 is less than or equal to 1 μm (that is, the overall thickness of the capacitor element packaging structure S can be reduced, and the number of stacked layers of the capacitor element packaging structure 10 can be increased), and the resistivity of the sintered silver layer 104 is less than the resistivity of the silver paste (that is, the silver paste that is not sintered) formed by mixing the epoxy resin and the silver paste.
One of the advantages of the present invention is that the electronic device provided by the present invention can be used to reduce or maintain the equivalent series resistance of the capacitor device packaging structure S in the case that the capacitor device 1 includes a plurality of capacitor structures 10 stacked and electrically connected to each other, the insulating package 2 is configured to cover the plurality of capacitor structures 10, each capacitor structure 10 includes a sintered silver layer 104, and more than 95% of the sintered silver layer 104 is made up of a plurality of pure silver materials 1041, so that the average thickness of the sintered silver layer 104 is less than or equal to 1 μm (that is, the overall thickness of the capacitor device packaging structure S can be reduced, and the number of stacked layers of the plurality of capacitor structures 10 can be increased), and the resistivity of the sintered silver layer 104 is less than the resistivity of the silver paste (that is, the silver paste formed by mixing epoxy and silver powder).
The foregoing disclosure is only a preferred embodiment of the present invention and is not intended to limit the scope of the claims, so that all equivalent technical changes made by the application of the present invention and the accompanying drawings are included in the scope of the claims.
Claims (10)
1. A capacitor assembly package structure, the capacitor assembly package structure comprising:
A capacitor assembly including a plurality of capacitor structures stacked and electrically connected to each other, each of the capacitor structures having a positive electrode portion and a negative electrode portion;
an insulating package configured to encapsulate a plurality of the capacitor structures, and
An electrode assembly including a first electrode structure and a second electrode structure, wherein the first electrode structure is mutually matched with the insulating package body and is electrically connected to the positive electrode part of the capacitor structure, and the second electrode structure is mutually matched with the insulating package body and is electrically connected to the negative electrode part of the capacitor structure;
wherein each of the capacitor structures comprises a sintered silver layer, and the sintered silver layer comprises 95% or more pure silver material.
2. The capacitor assembly package structure of claim 1, wherein,
Wherein each of the capacitor structures comprises a metal foil, an insulating surrounding layer circumferentially disposed on a first portion of the metal foil, a conductive polymer layer for coating the first portion of the metal foil and contacting the insulating surrounding layer, and a carbon paste layer for coating the conductive polymer layer and contacting the insulating surrounding layer, and the sintered silver layer is configured for coating the carbon paste layer and contacting the insulating surrounding layer;
Wherein the sintered silver layer is the outermost layer of the capacitor structure, and two sintered silver layers of two adjacent capacitor structures are electrically connected with each other through a conductive material;
wherein a second portion of the metal foil of each of the capacitor structures is not covered by the insulating surrounding layer, and a plurality of the second portions of the metal foils of a plurality of the capacitor structures are stacked or separated from each other;
wherein the average thickness of the sintered silver layer is less than or equal to 1 μm, and the resistivity of the sintered silver layer is less than the resistivity of silver paste mixed by epoxy resin and silver powder;
Wherein the sintered silver layer has an average thickness between 100nm and 1000nm and a resistivity between 1 x 10 -5 Ω -cm and 1 x 10 -6 Ω -cm for reducing or maintaining the equivalent series resistance of the capacitor component packaging structure;
the electrode assembly is a conductive pin assembly or a side end electrode assembly;
When the electrode assembly is the conductive pin assembly, the first electrode structure of the electrode assembly comprises a first embedded part covered by the insulating packaging body and a first exposed part connected to the first embedded part and exposed outside the insulating packaging body, the first embedded part of the first electrode structure is electrically connected to the positive electrode part of the capacitor structure, and the first exposed part of the first electrode structure extends along the outer surface of the insulating packaging body;
When the electrode assembly is the conductive pin assembly, the second electrode structure of the electrode assembly comprises a second embedded part covered by the insulating packaging body and a second exposed part connected with the second embedded part and exposed outside the insulating packaging body, the second embedded part of the second electrode structure is electrically connected with the negative electrode part of the capacitor structure, and the second exposed part of the second electrode structure extends along the outer surface of the insulating packaging body;
wherein when the electrode assembly is the side electrode assembly, the first electrode structure of the electrode assembly includes a first inner conductive layer configured to cover a first side end of the insulating package and electrically connected to the positive electrode portion of the capacitor structure, a first intermediate conductive layer configured to cover the first inner conductive layer, and a first outer conductive layer configured to cover the first intermediate conductive layer, the first inner conductive layer being one of an Ag layer and a Cu layer, the first intermediate conductive layer being a Ni layer, and the first outer conductive layer being a Sn layer;
Wherein when the electrode assembly is the side electrode assembly, the second electrode structure of the electrode assembly includes a second inner conductive layer configured to cover a second side end of the insulating package and electrically connected to the negative electrode portion of the capacitor structure, a second intermediate conductive layer configured to cover the second inner conductive layer, and a second outer conductive layer configured to cover the second intermediate conductive layer, the second inner conductive layer being one of an Ag layer and a Cu layer, the second intermediate conductive layer being a Ni layer, and the second outer conductive layer being a Sn layer;
when the electrode assembly is the side-end electrode assembly, a plurality of capacitor structures are carried by a conductive carrier substrate, and the negative electrode portions of the capacitor structures are electrically connected to the second electrode structure of the electrode assembly through the conductive carrier substrate.
3. The capacitor assembly package structure of claim 1, wherein,
Wherein each of the capacitor structures comprises a metal foil, an insulating surrounding layer circumferentially disposed on a first portion of the metal foil, and a conductive polymer layer for cladding the first portion of the metal foil and contacting the insulating surrounding layer, and the sintered silver layer is configured for cladding the conductive polymer layer and contacting the insulating surrounding layer;
Wherein the sintered silver layer is the outermost layer of the capacitor structure, and two sintered silver layers of two adjacent capacitor structures are electrically connected with each other through a conductive material;
wherein a second portion of the metal foil of each of the capacitor structures is not covered by the insulating surrounding layer, and a plurality of the second portions of the metal foils of a plurality of the capacitor structures are stacked or separated from each other;
wherein the average thickness of the sintered silver layer is less than or equal to 1 μm, and the resistivity of the sintered silver layer is less than the resistivity of silver paste mixed by epoxy resin and silver powder;
Wherein the sintered silver layer has an average thickness between 100nm and 1000nm and a resistivity between 1 x 10 -5 Ω -cm and 1 x 10 -6 Ω -cm for reducing or maintaining the equivalent series resistance of the capacitor component packaging structure;
the electrode assembly is a conductive pin assembly or a side end electrode assembly;
When the electrode assembly is the conductive pin assembly, the first electrode structure of the electrode assembly comprises a first embedded part covered by the insulating packaging body and a first exposed part connected to the first embedded part and exposed outside the insulating packaging body, the first embedded part of the first electrode structure is electrically connected to the positive electrode part of the capacitor structure, and the first exposed part of the first electrode structure extends along the outer surface of the insulating packaging body;
When the electrode assembly is the conductive pin assembly, the second electrode structure of the electrode assembly comprises a second embedded part covered by the insulating packaging body and a second exposed part connected with the second embedded part and exposed outside the insulating packaging body, the second embedded part of the second electrode structure is electrically connected with the negative electrode part of the capacitor structure, and the second exposed part of the second electrode structure extends along the outer surface of the insulating packaging body;
wherein when the electrode assembly is the side electrode assembly, the first electrode structure of the electrode assembly includes a first inner conductive layer configured to cover a first side end of the insulating package and electrically connected to the positive electrode portion of the capacitor structure, a first intermediate conductive layer configured to cover the first inner conductive layer, and a first outer conductive layer configured to cover the first intermediate conductive layer, the first inner conductive layer being one of an Ag layer and a Cu layer, the first intermediate conductive layer being a Ni layer, and the first outer conductive layer being a Sn layer;
Wherein when the electrode assembly is the side electrode assembly, the second electrode structure of the electrode assembly includes a second inner conductive layer configured to cover a second side end of the insulating package and electrically connected to the negative electrode portion of the capacitor structure, a second intermediate conductive layer configured to cover the second inner conductive layer, and a second outer conductive layer configured to cover the second intermediate conductive layer, the second inner conductive layer being one of an Ag layer and a Cu layer, the second intermediate conductive layer being a Ni layer, and the second outer conductive layer being a Sn layer;
when the electrode assembly is the side-end electrode assembly, a plurality of capacitor structures are carried by a conductive carrier substrate, and the negative electrode portions of the capacitor structures are electrically connected to the second electrode structure of the electrode assembly through the conductive carrier substrate.
4. A capacitor structure for use in a capacitor component package structure, the capacitor structure comprising a sintered silver layer, wherein the sintered silver layer comprises greater than 95% pure silver material.
5. The capacitor structure of claim 4, wherein,
Wherein the capacitor structure comprises a metal foil, an insulating surrounding layer circumferentially disposed on a first portion of the metal foil, a conductive polymer layer for coating the first portion of the metal foil and contacting the insulating surrounding layer, and a carbon paste layer for coating the conductive polymer layer and contacting the insulating surrounding layer, and the sintered silver layer is configured for coating the carbon paste layer and contacting the insulating surrounding layer;
wherein the sintered silver layer is the outermost layer of the capacitor structure;
wherein a second portion of the metal foil of the capacitor structure is not covered by the insulating surrounding layer.
6. The capacitor structure of claim 4, wherein,
Wherein the capacitor structure comprises a metal foil, an insulating surrounding layer circumferentially disposed on a first portion of the metal foil, and a conductive polymer layer for cladding the first portion of the metal foil and contacting the insulating surrounding layer, and the sintered silver layer is configured for cladding the conductive polymer layer and contacting the insulating surrounding layer;
wherein the sintered silver layer is the outermost layer of the capacitor structure;
wherein a second portion of the metal foil of the capacitor structure is not covered by the insulating surrounding layer.
7. A method of fabricating a capacitor structure according to claim 4, comprising:
Providing a metal foil;
forming an insulating surrounding layer to be circumferentially disposed on a first portion of the metal foil;
Forming a conductive polymer layer to cover the first part of the metal foil and contact the insulating surrounding layer;
forming a carbon adhesive layer to cover the conductive polymer layer and contact the insulating surrounding layer;
forming a silver material layer to cover the carbon gel layer and contact the insulating surrounding layer, and
Sintering the silver material layer to form a sintered silver layer that coats the carbon paste layer and contacts the insulating surrounding layer;
wherein the silver material layer comprises a surfactant, and pure silver material and the surfactant are mixed with each other;
Wherein the surfactant is an ionic surfactant or a nonionic surfactant;
wherein the average thickness of the sintered silver layer is less than or equal to 1 μm, and the resistivity of the sintered silver layer is less than the resistivity of silver paste mixed by epoxy resin and silver powder;
Wherein the sintered silver layer has an average thickness between 100nm and 1000nm and a resistivity between 1 x 10 -5 Ω -cm and 1 x 10 -6 Ω -cm for reducing or maintaining the equivalent series resistance of the capacitor component packaging structure.
8. A method of fabricating a capacitor structure according to claim 4, comprising:
Providing a metal foil;
forming an insulating surrounding layer to be circumferentially disposed on a first portion of the metal foil;
Forming a conductive polymer layer to cover the first part of the metal foil and contact the insulating surrounding layer;
Forming a silver material layer to cover the conductive polymer layer and contact the insulating surrounding layer, and
Sintering the silver material layer to form a sintered silver layer that encapsulates the conductive polymer layer and contacts the insulating surrounding layer;
wherein the silver material layer comprises a surfactant, and pure silver material and the surfactant are mixed with each other;
Wherein the surfactant is an ionic surfactant or a nonionic surfactant;
wherein the average thickness of the sintered silver layer is less than or equal to 1 μm, and the resistivity of the sintered silver layer is less than the resistivity of silver paste mixed by epoxy resin and silver powder;
Wherein the sintered silver layer has an average thickness between 100nm and 1000nm and a resistivity between 1 x 10 -5 Ω -cm and 1 x 10 -6 Ω -cm for reducing or maintaining the equivalent series resistance of the capacitor component packaging structure.
9. An electronic device employing a capacitor assembly package structure, the capacitor assembly package structure comprising:
A capacitor assembly including a plurality of capacitor structures stacked and electrically connected to each other, each of the capacitor structures having a positive electrode portion and a negative electrode portion;
an insulating package configured to encapsulate a plurality of the capacitor structures, and
An electrode assembly including a first electrode structure and a second electrode structure, wherein the first electrode structure is mutually matched with the insulating package body and is electrically connected to the positive electrode part of the capacitor structure, and the second electrode structure is mutually matched with the insulating package body and is electrically connected to the negative electrode part of the capacitor structure;
wherein each of the capacitor structures comprises a sintered silver layer, and the sintered silver layer comprises 95% or more pure silver material.
10. The electronic device of claim 9, wherein the electronic device comprises a plurality of electronic devices,
Wherein each of the capacitor structures comprises a metal foil, an insulating surrounding layer circumferentially disposed on a first portion of the metal foil, and a conductive polymer layer for cladding the first portion of the metal foil and contacting the insulating surrounding layer, and the sintered silver layer is configured for cladding the conductive polymer layer and contacting the insulating surrounding layer;
Wherein the sintered silver layer is the outermost layer of the capacitor structure, and two sintered silver layers of two adjacent capacitor structures are electrically connected with each other through a conductive material;
wherein a second portion of the metal foil of each of the capacitor structures is not covered by the insulating surrounding layer, and a plurality of the second portions of the metal foils of a plurality of the capacitor structures are stacked or separated from each other;
wherein the average thickness of the sintered silver layer is less than or equal to 1 μm, and the resistivity of the sintered silver layer is less than the resistivity of silver paste mixed by epoxy resin and silver powder;
Wherein the sintered silver layer has an average thickness between 100nm and 1000nm and a resistivity between 1 x 10 -5 Ω -cm and 1 x 10 -6 Ω -cm for reducing or maintaining the equivalent series resistance of the capacitor component packaging structure;
the electrode assembly is a conductive pin assembly or a side end electrode assembly;
When the electrode assembly is the conductive pin assembly, the first electrode structure of the electrode assembly comprises a first embedded part covered by the insulating packaging body and a first exposed part connected to the first embedded part and exposed outside the insulating packaging body, the first embedded part of the first electrode structure is electrically connected to the positive electrode part of the capacitor structure, and the first exposed part of the first electrode structure extends along the outer surface of the insulating packaging body;
When the electrode assembly is the conductive pin assembly, the second electrode structure of the electrode assembly comprises a second embedded part covered by the insulating packaging body and a second exposed part connected with the second embedded part and exposed outside the insulating packaging body, the second embedded part of the second electrode structure is electrically connected with the negative electrode part of the capacitor structure, and the second exposed part of the second electrode structure extends along the outer surface of the insulating packaging body;
wherein when the electrode assembly is the side electrode assembly, the first electrode structure of the electrode assembly includes a first inner conductive layer configured to cover a first side end of the insulating package and electrically connected to the positive electrode portion of the capacitor structure, a first intermediate conductive layer configured to cover the first inner conductive layer, and a first outer conductive layer configured to cover the first intermediate conductive layer, the first inner conductive layer being one of an Ag layer and a Cu layer, the first intermediate conductive layer being a Ni layer, and the first outer conductive layer being a Sn layer;
Wherein when the electrode assembly is the side electrode assembly, the second electrode structure of the electrode assembly includes a second inner conductive layer configured to cover a second side end of the insulating package and electrically connected to the negative electrode portion of the capacitor structure, a second intermediate conductive layer configured to cover the second inner conductive layer, and a second outer conductive layer configured to cover the second intermediate conductive layer, the second inner conductive layer being one of an Ag layer and a Cu layer, the second intermediate conductive layer being a Ni layer, and the second outer conductive layer being a Sn layer;
when the electrode assembly is the side-end electrode assembly, a plurality of capacitor structures are carried by a conductive carrier substrate, and the negative electrode portions of the capacitor structures are electrically connected to the second electrode structure of the electrode assembly through the conductive carrier substrate.
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