CN119601477A - Gold bump preparation method for thermosonic spherical gold wire bonding, flip bonding structure and chip - Google Patents
Gold bump preparation method for thermosonic spherical gold wire bonding, flip bonding structure and chip Download PDFInfo
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- CN119601477A CN119601477A CN202411705201.1A CN202411705201A CN119601477A CN 119601477 A CN119601477 A CN 119601477A CN 202411705201 A CN202411705201 A CN 202411705201A CN 119601477 A CN119601477 A CN 119601477A
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Abstract
The application discloses a preparation method of a gold bump bonded by thermosonic spherical gold wire, a flip bonding structure and a chip, and relates to the field of chips. The method comprises the following steps of forming a plurality of gold bumps on a flip bonding pad through thermosonic spherical gold wire bonding, wherein the width of the flip bonding pad is greater than or equal to 150 mu m. A plurality of gold bumps are formed through thermosonic spherical gold wire bonding, so that the plurality of gold bumps can realize the support of a large-size chip on a flip bonding pad with the width of more than or equal to 150 mu m. Based on gold wires with different diameters and based on specific requirements of the size of the bonding pad, various gold bumps are prepared in a combined mode, the contact area between the bonding pad on the flip chip and the bonding pad on the substrate is increased, electric signal interconnection between the bonding pads is completed, and the gold bump technology replaces micro gold bumps and copper columns which are high in cost and complex in technology, so that the cost can be reduced, and the efficiency is improved.
Description
Technical Field
The application relates to the technical field of chips, in particular to a preparation method of gold bumps for thermosonic spherical gold wire bonding, a flip-chip bonding structure and a chip.
Background
In advanced packaging technology of semiconductor integrated circuit chips, flip chip bonding (Flip chip) technology is generally used, and a micro gold bump (Micro Bumping) structure or a copper pillar (Copper Pillar) structure, a C4 (Controlled Collapse Chip Connection) gold bump structure, a solder ball (Solder Ball) structure, etc. are required as mechanical support and electrical signal interconnection pads for realizing the Flip chip bonding technology.
The micro gold bump (Micro Bumping) structure or the micro copper pillar (Copper Pillar) structure required for realizing Flip chip bonding is complex in preparation process, high in manufacturing cost and inferior to the chip manufacturing cost. The single gold bump is formed through ultrasonic bonding, the transverse diameter is usually smaller than or equal to 90 mu m, the electric signal interconnection is difficult to achieve by using flip-chip bonding technology between pads with larger size (larger than or equal to 150 mu m), a large-size chip cannot be effectively supported, and the reliability of the electric signal interconnection cannot be ensured after flip-chip bonding.
Disclosure of Invention
The application provides a preparation method of a gold bump bonded by thermosonic spherical gold wire, a flip-chip bonding structure and a chip, which are used for solving the problems of complex preparation process and high manufacturing cost in the prior art.
In the prior art, the gold bump or copper pillar structures are mainly manufactured on the whole wafer, and the structures are manufactured on a single chip, so that the chip protection requirement is relatively high, particularly, the optical chip is provided with an optical port, the ball-planting process is very harsh, the chip is easily polluted, and the yield is reduced.
Jin Sire ultrasonic bonding is a key technology for realizing electrical interconnection between a multi-chip assembly and a Printed Circuit Board (PCB), and the quality of gold wire bonding directly affects the reliability and stability of a circuit, and particularly has a great influence on the high-frequency characteristic of the circuit. Jin Sire ultrasonic bonding is mainly classified into ball bonding and wedge bonding according to application scenes.
The thermal ultrasonic spherical gold wire bonding is a widely applied technology in the field of microelectronic packaging, and is mainly used for realizing the key process of electric interconnection between a chip and a substrate. Thermosonic ball gold wire bonding is a critical technique for connecting chips and carriers in semiconductor manufacturing processes. The advantages of thermocompression bonding and ultrasonic bonding are combined, and a stable connection point is formed by applying pressure, ultrasonic energy, and thermal energy between the gold wire and the bonding pad. The specific process comprises melting the end of gold wire to form a small ball, and pressing the ball onto the bonding pad of the chip or substrate to complete the first welding spot. Then, the gold wire is pulled to a specific position and pressed onto the second bonding pad to form a second bonding spot, and finally the gold wire is torn off, leaving a tail portion for the next bonding cycle.
Flip chip bonding is a microelectronic packaging technique that achieves high density, high performance interconnection by connecting the front side of the chip down to the substrate. Flip Chip bonding (Flip Chip) is an advanced semiconductor packaging technology that, unlike conventional wire bonding, is directly connected to a substrate by gold bump electrodes on the Chip. This technique is called "flip-chip" because the chip is placed face down on the substrate during packaging. Flip chip bonding technology has a number of significant advantages. Because the chip is directly connected with the substrate through the gold bumps, the packaging volume is greatly reduced, and the integration level and the circuit performance are improved. Meanwhile, the path of current passing through the gold bump is shorter, so that the signal transmission speed can be effectively improved, and the signal loss can be reduced. Flip-chip bonding also provides better thermal management because heat can be transferred directly from the chip to the substrate through the gold bumps, thereby effectively dissipating heat.
In a first aspect, the application provides a method for preparing gold bumps by thermosonic ball gold wire bonding, comprising the following steps:
Thermosonic ball gold wire bonding on the flip bonding pad to form a plurality of gold bumps;
Wherein the width of the flip chip bonding pad is greater than or equal to 150 μm.
According to the application, the plurality of gold bumps are formed by thermosonic spherical gold wire bonding, so that the plurality of gold bumps can realize the support of a large-size chip on the flip bonding pad with the width of more than or equal to 150 mu m. Based on gold wires with different diameters and based on specific requirements of the size of the bonding pad, various gold bumps are prepared in a combined mode, the contact area between the bonding pad on the flip chip and the bonding pad on the substrate is increased, electric signal interconnection between the bonding pads is completed, and the gold bump technology replaces micro gold bumps and copper columns which are high in cost and complex in technology, so that the cost can be reduced, and the efficiency is improved. The gold bumps are designed into a plurality of gold bumps, so that bonding patch requirements of different bonding pad sizes can be met, the gold bumps with different diameters are prepared on bonding pads with different types based on the combination of the gold bump types, and the gold bumps are prepared on the bonding pads, so that the contact area between a flip-chip bonding chip and a substrate bonding pad welding spot can be obviously improved, the bonding strength is increased, and the interconnection reliability of electric signals is improved.
In some embodiments, the diameter of the gold wire of the thermosonic spherical gold wire bond is d1, d1 is more than or equal to 13 μm and less than or equal to 100 μm, and the diameter of the gold wire of the thermosonic spherical gold wire bond is within the range, so that the interconnection density and the packaging integration level can be improved, and the gold wire has good electrical performance, and simultaneously has good process stability and practical operability.
In some embodiments, the spacing between adjacent gold bumps is L, where L is greater than or equal to 5 μm, and the spacing between gold bumps is a key parameter that determines packaging density and circuit complexity, and has an important effect on the performance and reliability of the chip. When the gold bumps have smaller pitches, the current can generate larger resistance and inductance when passing through a narrow path between the gold bumps, and the electrical performance of the chip can be affected. The smaller gold bump pitch increases the capacitance between gold bumps, which can lead to signal crosstalk and power integrity problems, thereby affecting the overall performance of the chip. The reduction of the spacing between the gold bumps can lead to the reduction of the capability of heat dispersion on the chip, and the reduction of the distance between the gold bumps can reduce the space for air flow, thereby reducing the heat dissipation effect caused by natural convection, and leading to the temperature rise of the chip in the long-time operation process, and affecting the performance and stability of the chip. The requirement for precision in gold bump pitch is extremely high, and any small deviation may cause short circuit between gold bumps, thereby affecting the reliability of the whole chip. Meanwhile, the gold bumps have small spacing, and are easier to deform or damage when being acted by external force. The spacing between adjacent gold bumps is within the range, so that the mutual short circuit between gold balls can be reduced, and high interconnection density and high packaging integration level can be achieved.
In some embodiments, the diameter of the gold bump is d2, and d2 is less than or equal to 26 μm and less than or equal to 300 μm, when the diameter of the gold bump is larger, the resistance and inductance generated when the current passes through the gold bump are smaller, which is helpful to improve the electrical performance of the chip, reduce the capacitance between the gold bumps, reduce the signal crosstalk, improve the integrity of the power supply, and further improve the overall performance of the chip. An increase in gold bump diameter may enhance the ability of heat spreading on the chip. The increase of the diameter of the gold bump increases the area of the gold bump, and heat can be dispersed through larger surface area, so that the heat dissipation effect of the chip is improved. The larger gold bump diameter requires less precision during fabrication, which can reduce the risk of shorting during fabrication, thereby enhancing the reliability of the entire chip. Meanwhile, the gold bumps have large diameters, and are not easy to deform or damage when being acted by external force. The diameter of the gold bump is in this range, which can enable the quality of the bonding pad between the gold bump and the pad and good electrical properties while ensuring high interconnection density and a small package size.
In some embodiments, the height of the gold bump is H1, where H1 is less than or equal to 10 μm and less than or equal to 150 μm, and when the height of the gold bump is appropriate, the resistance and inductance can be reduced, which helps to improve the electrical performance of the chip. The signal crosstalk and the power integrity can be effectively reduced due to the proper bump height, so that the overall performance of the chip is improved, gold bumps with different heights can be subjected to different shearing force effects, and the mechanical strength and the reliability of the package can be improved due to the proper gold bump height. The gold bump height is within this range, which allows for higher interconnect density and ensures the feasibility of the underfill process.
In some embodiments, the shoulder height of the gold bump is H2, H2 is more than or equal to 3 μm and less than or equal to 12 μm, and the shoulder height of the gold bump is within the range, so that good welding spots can be formed, and the electrical performance is improved.
In some embodiments, the height deviation value of the gold bump is s, -2 μm or less and s or less than 2 μm, the height deviation value of the gold bump refers to the difference between the height of the gold bump and the average height, the gold bump with small height deviation can ensure that each gold bump can be uniformly contacted in the bonding process, thereby improving the connection reliability, the uniform gold bump height is favorable for uniformly distributing stress, reducing the failure risk caused by stress concentration, and the deviation value of the height of the gold bump is in the range, so that the electrical signal interconnection can be realized when the flip chip is carried out later, the probability of insufficient contact between the top of the gold bump and the bonding pad or the bump of the attached chip is reduced, the quality and the reliability of the welding spot are influenced, and the electrical performance is improved.
In a second aspect, the present application provides a flip-chip bonding structure, including the gold bump manufactured by the method for manufacturing a thermosonic ball gold bump according to the first aspect.
In a third aspect, the present application provides a chip comprising the flip-chip bonding structure of the second aspect.
In a fourth aspect, the application provides a processor comprising the chip of the third aspect.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a process flow diagram of a method for preparing gold bumps by thermosonic ball gold wire bonding according to one embodiment of the present application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be clearly and completely described in conjunction with the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
In advanced packaging technology of semiconductor integrated circuit chips, flip chip bonding (Flip chip) technology is generally used, and a micro gold bump (Micro Bumping) structure or a copper pillar (Copper Pillar) structure, a C4 (Controlled Collapse Chip Connection) gold bump structure, a solder ball (Solder Ball) structure, etc. are required as mechanical support and electrical signal interconnection pads for realizing the Flip chip bonding technology.
The micro gold bump (Micro Bumping) structure or the micro copper pillar (Copper Pillar) structure required for realizing Flip chip bonding is complex in preparation process, high in manufacturing cost and inferior to the chip manufacturing cost. The single gold bump is formed through ultrasonic bonding, the transverse diameter is usually smaller than or equal to 90 mu m, the electric signal interconnection is difficult to achieve by using flip-chip bonding technology between pads with larger size (larger than or equal to 150 mu m), a large-size chip cannot be effectively supported, and the reliability of the electric signal interconnection cannot be ensured after flip-chip bonding.
In view of the above, the application provides a preparation method of a gold bump bonded by thermosonic spherical gold wire, a processing method thereof, a chassis part and an automobile, so as to solve the problem of insufficient toughness of the existing non-quenched and tempered steel.
In the prior art, the gold bump or copper pillar structures are mainly manufactured on the whole wafer, and the structures are manufactured on a single chip, so that the chip protection requirement is relatively high, particularly, the optical chip is provided with an optical port, the ball-planting process is very harsh, the chip is easily polluted, and the yield is reduced.
Jin Sire ultrasonic bonding is a key technology for realizing electrical interconnection between a multi-chip assembly and a Printed Circuit Board (PCB), and the quality of gold wire bonding directly affects the reliability and stability of a circuit, and particularly has a great influence on the high-frequency characteristic of the circuit. Jin Sire ultrasonic bonding is mainly classified into ball bonding and wedge bonding according to application scenes.
The thermal ultrasonic spherical gold wire bonding is a widely applied technology in the field of microelectronic packaging, and is mainly used for realizing the key process of electric interconnection between a chip and a substrate. Thermosonic ball gold wire bonding is a critical technique for connecting chips and carriers in semiconductor manufacturing processes. The advantages of thermocompression bonding and ultrasonic bonding are combined, and a stable connection point is formed by applying pressure, ultrasonic energy, and thermal energy between the gold wire and the bonding pad. The specific process comprises melting the end of gold wire to form a small ball, and pressing the ball onto the bonding pad of the chip or substrate to complete the first welding spot. Then, the gold wire is pulled to a specific position and pressed onto the second bonding pad to form a second bonding spot, and finally the gold wire is torn off, leaving a tail portion for the next bonding cycle.
Flip chip bonding is a microelectronic packaging technique that achieves high density, high performance interconnection by connecting the front side of the chip down to the substrate. Flip Chip bonding (Flip Chip) is an advanced semiconductor packaging technology that, unlike conventional wire bonding, is directly connected to a substrate by gold bump electrodes on the Chip. This technique is called "flip-chip" because the chip is placed face down on the substrate during packaging. Flip chip bonding technology has a number of significant advantages. Because the chip is directly connected with the substrate through the gold bumps, the packaging volume is greatly reduced, and the integration level and the circuit performance are improved. Meanwhile, the path of current passing through the gold bump is shorter, so that the signal transmission speed can be effectively improved, and the signal loss can be reduced. Flip-chip bonding also provides better thermal management because heat can be transferred directly from the chip to the substrate through the gold bumps, thereby effectively dissipating heat.
In a first aspect, as shown in fig. 1, the present application provides a method for preparing a gold bump by thermosonic ball gold wire bonding, comprising the steps of:
Thermosonic ball gold wire bonding on the flip bonding pad to form a plurality of gold bumps;
Wherein the width of the flip chip bonding pad is greater than or equal to 150 μm.
According to the application, the plurality of gold bumps are formed by thermosonic spherical gold wire bonding, so that the plurality of gold bumps can realize the support of a large-size chip on the flip bonding pad with the width of more than or equal to 150 mu m. Based on gold wires with different diameters and based on specific requirements of the size of the bonding pad, various gold bumps are prepared in a combined mode, the contact area between the bonding pad on the flip chip and the bonding pad on the substrate is increased, electric signal interconnection between the bonding pads is completed, and the gold bump technology replaces micro gold bumps and copper columns which are high in cost and complex in technology, so that the cost can be reduced, and the efficiency is improved. The gold bumps are designed into a plurality of gold bumps, so that bonding patch requirements of different bonding pad sizes can be met, the gold bumps with different diameters are prepared on bonding pads with different types based on the combination of the gold bump types, and the gold bumps are prepared on the bonding pads, so that the contact area between a flip-chip bonding chip and a substrate bonding pad welding spot can be obviously improved, the bonding strength is increased, and the interconnection reliability of electric signals is improved.
In combination with the first aspect, in some embodiments provided by the application, the diameter of the gold wire of the thermosonic spherical gold wire bond is d1, d1 is more than or equal to 13 μm and less than or equal to 100 μm, and the diameter of the gold wire of the thermosonic spherical gold wire bond is within the range, so that the interconnection density and the packaging integration level can be improved, and the gold wire has good electrical performance, and simultaneously has good process stability and practical operability. The diameter of the gold wire of the thermosonic ball gold wire bond includes, but is not limited to, 13 μm, 15 μm, 20 μm, 25 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm or 100 μm.
In combination with the first aspect, in some embodiments provided by the application, the spacing between adjacent gold bumps is L, L is greater than or equal to 5 μm, and the spacing of the gold bumps is a key parameter for determining the packaging density and the circuit complexity, and has an important influence on the performance and the reliability of the chip. When the gold bumps have smaller pitches, the current can generate larger resistance and inductance when passing through a narrow path between the gold bumps, and the electrical performance of the chip can be affected. The smaller gold bump pitch increases the capacitance between gold bumps, which can lead to signal crosstalk and power integrity problems, thereby affecting the overall performance of the chip. The reduction of the spacing between the gold bumps can lead to the reduction of the capability of heat dispersion on the chip, and the reduction of the distance between the gold bumps can reduce the space for air flow, thereby reducing the heat dissipation effect caused by natural convection, and leading to the temperature rise of the chip in the long-time operation process, and affecting the performance and stability of the chip. The requirement for precision in gold bump pitch is extremely high, and any small deviation may cause short circuit between gold bumps, thereby affecting the reliability of the whole chip. Meanwhile, the gold bumps have small spacing, and are easier to deform or damage when being acted by external force. The spacing between adjacent gold bumps is within the range, so that the probability of mutual short circuit between gold balls can be reduced, and high interconnection density and high packaging integration level can be achieved. The outer edge of the riving knife can be aligned with the adjacent gold bump edges in the vertical direction, so that the distance between the two gold bump edges is reduced as much as possible, and gold bumps with higher density can be prepared on the same area size of the bonding pad.
In combination with the first aspect, in some embodiments provided by the application, the diameter of the gold bump is d2, and d2 is less than or equal to 26 μm and less than or equal to 300 μm, when the diameter of the gold bump is larger, the resistance and inductance generated when the current passes through the gold bump are smaller, which is helpful to improve the electrical performance of the chip, reduce the capacitance between the gold bumps, reduce the signal crosstalk, improve the integrity of the power supply, and further improve the overall performance of the chip. An increase in gold bump diameter may enhance the ability of heat spreading on the chip. The increase of the diameter of the gold bump increases the area of the gold bump, and heat can be dispersed through larger surface area, so that the heat dissipation effect of the chip is improved. The larger gold bump diameter requires less precision during fabrication, which can reduce the risk of shorting during fabrication, thereby enhancing the reliability of the entire chip. Meanwhile, the gold bumps have large diameters, and are not easy to deform or damage when being acted by external force. The diameter of the gold bump is in the range, so that the bonding between the gold bump and the bonding pad is firm, the reliability is high, the electrical performance is good, and meanwhile, the high interconnection density and the high packaging integration level can be ensured. The diameter of the gold bump includes, but is not limited to, 26 μm, 30 μm, 50 μm, 80 μm, 100 μm, 120 μm, 150 μm, 170 μm, 200 μm, 220 μm, 250 μm280 μm or 300 μm.
With reference to the first aspect, in some embodiments provided by the application, the height of the gold bump is H1, and H1 is less than or equal to 10 μm and less than or equal to 150 μm, and when the height of the gold bump is appropriate, the resistance and inductance can be reduced, which is helpful for improving the electrical performance of the chip. The signal crosstalk and the power integrity can be effectively reduced due to the proper bump height, so that the overall performance of the chip is improved, gold bumps with different heights can be subjected to different shearing force effects, and the mechanical strength and the reliability of the package can be improved due to the proper gold bump height. The gold bump height is within this range, which allows for higher interconnect density and ensures the feasibility of the underfill process. The height of the gold bump includes, but is not limited to, 10 μm, 30 μm, 50 μm, 70 μm, 100 μm, 120 μm, or 150 μm.
In combination with the first aspect, in some embodiments provided by the application, the shoulder height of the gold bump is H2, H2 is less than or equal to 3 μm and less than or equal to 12 μm, and the shoulder height of the gold bump is within the range, so that good welding spots can be formed, and the electrical performance is improved. The shoulder height of the gold bump includes, but is not limited to, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, or 12 μm.
In combination with the first aspect, in some embodiments provided by the application, the deviation value of the height of the gold bump is s, -2 μm is less than or equal to s is less than or equal to 2 μm, the deviation value of the height of the gold bump is the difference between the height of the gold bump and the average height, the gold bump with small height deviation can ensure that each gold bump can be uniformly contacted in the bonding process, thereby improving the reliability of connection, the uniform height of the gold bump is favorable for uniformly distributing stress, reducing the failure risk caused by stress concentration, and the deviation value of the height of the gold bump is in the range, so that the interconnection of electric signals can be realized when the flip chip is carried out later, the probability of insufficient contact between the top of the gold bump and the bonding pad or the bump of the mounted chip is reduced, the quality and reliability of the welding point are influenced, and the electrical performance is improved. The deviation value of the height of the gold bump includes, but is not limited to, -2 μm, -1 μm, 0 μm,1 μm or 2 μm.
In a second aspect, the present application provides a flip-chip bonding structure, including the gold bump manufactured by the method for manufacturing a thermosonic ball gold bump according to the first aspect. The flip bonding structure has all the technical schemes of the preparation method of the gold bump by the thermosonic ball gold wire bonding, so that the preparation method of the gold bump by the thermosonic ball gold wire bonding has all the beneficial effects, and the application is not described in detail herein.
In a third aspect, the present application provides a chip comprising the flip-chip bonding structure of the second aspect. The chip has all the technical schemes of the preparation method of the gold bump by the thermosonic ball gold wire bonding, so that the chip has all the beneficial effects of the preparation method of the gold bump by the thermosonic ball gold wire bonding, and the application is not described in detail herein.
In a fourth aspect, the application provides a processor comprising the chip of the third aspect. The processor has all the technical schemes of the preparation method of the gold bump by the thermosonic ball gold wire bonding, so that the preparation method of the gold bump by the thermosonic ball gold wire bonding has all the beneficial effects, and the application is not described in detail herein.
The technical scheme provided by the application is described in detail below with reference to examples.
Example 1
The embodiment 1 of the application provides a preparation method of gold bumps bonded by thermosonic spherical gold wire, which comprises the following steps:
Thermosonic ball gold wire bonding on the flip bonding pad to form a plurality of gold bumps;
wherein the width of the flip bonding pad is 200 μm;
The diameter of the gold wire bonded by the thermosonic spherical gold wire is 25 mu m;
The spacing between adjacent gold bumps is 5 μm;
the diameter of the gold bump is 75 mu m;
the height of the gold bump is 38 mu m;
the shoulder height of the gold bump is 12 mu m;
The height of the gold bump was varied by 2 μm.
Example 2
The embodiment 2 of the application provides a preparation method of gold bumps bonded by thermosonic spherical gold wire, which comprises the following steps:
Thermosonic ball gold wire bonding on the flip bonding pad to form a plurality of gold bumps;
wherein the width of the flip bonding pad is 200 μm;
The diameter of the gold wire bonded by the thermosonic spherical gold wire is 25 mu m;
The spacing between adjacent gold bumps is 5 μm;
the diameter of the gold bump is 50 μm;
the height of the gold bump is 17 mu m;
the shoulder height of the gold bump is 3 mu m;
the height of the gold bump is deviated by-2 μm.
Example 3
The embodiment 3 of the application provides a preparation method of gold bumps bonded by thermosonic spherical gold wire, which comprises the following steps:
Thermosonic ball gold wire bonding on the flip bonding pad to form a plurality of gold bumps;
wherein the width of the flip bonding pad is 200 μm;
The diameter of the gold wire bonded by the thermosonic spherical gold wire is 25 mu m;
The spacing between adjacent gold bumps is 5 μm;
The diameter of the gold bump is 62.5 μm;
the height of the gold bump is 26 μm;
The shoulder height of the gold bump is 7.5;
The height of the gold bump is 1 μm.
In summary, the plurality of gold bumps can be formed by thermosonic ball gold wire bonding, so that the plurality of gold bumps can realize the support of the large-size chip for the flip-chip bonding pad with the width of more than or equal to 150 μm. Based on gold wires with different diameters and based on specific requirements of the size of the bonding pad, various gold bumps are prepared in a combined mode, the contact area between the bonding pad on the flip chip and the bonding pad on the substrate is increased, electric signal interconnection between the bonding pads is completed, and the gold bump technology replaces micro gold bumps and copper columns which are high in cost and complex in technology, so that the cost can be reduced, and the efficiency is improved.
In the description of the present specification, reference to the terms "one embodiment/manner," "some embodiments/manner," "example," "a particular example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment/manner or example is included in at least one embodiment/manner or example of the application. In this specification, the schematic representations of the above terms are not necessarily for the same embodiment/manner or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments/modes or examples. Furthermore, the various embodiments/modes or examples described in this specification and the features of the various embodiments/modes or examples can be combined and combined by persons skilled in the art without contradiction.
It should be noted that in the present application, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element. In the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically specified otherwise.
The foregoing is only a specific embodiment of the application to enable those skilled in the art to understand or practice the application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
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