CN119546006A

CN119546006A - Light emitting device and display device

Info

Publication number: CN119546006A
Application number: CN202311070025.4A
Authority: CN
Inventors: 王杰凌; 时军朋; 陈清河; 余长志; 徐宸科
Original assignee: Hubei San'an Photoelectric Co ltd
Current assignee: Hubei San'an Photoelectric Co ltd
Priority date: 2023-08-23
Filing date: 2023-08-23
Publication date: 2025-02-28

Abstract

The invention discloses a light-emitting device and a display device, wherein the light-emitting device comprises a transparent layer, a plurality of angle adjusting layers, a plurality of light-emitting elements, a wiring layer and a plurality of protection electrodes, the angle adjusting layers are arranged above the transparent layer in a spacing mode, each light-emitting element is correspondingly arranged on each angle adjusting layer, the light-emitting sides of the light-emitting elements are in one-to-one correspondence with the angle adjusting layers, the wiring layer is arranged on the light-emitting elements, and the wiring layer is electrically connected with each light-emitting element. The invention also provides a plurality of angle adjusting layers between the transparent layer and the light emitting elements, and the angle adjusting layers are in one-to-one correspondence with the light emitting elements. The angle adjusting layer can adjust the light emitting angle of each light emitting element and enlarge the light emitting angle of each light emitting element so as to avoid light dead zones between adjacent light emitting elements and influence the display effect.

Description

Light-emitting device and display device

Technical Field

The invention relates to the technical field of semiconductor devices, in particular to a light-emitting device and a display device.

Background

The LED chip is widely used in various fields such as display devices, lamps for vehicles, general illumination lamps, etc. due to its characteristics of high reliability, long lifetime, and low power consumption, for example, the LED chip can be used as a backlight source for various display devices. At present, the size of micro-chips (micro-LED chips, which are generally smaller than 100 nm) is too small, and the process of grabbing the chips to fix on a display panel is difficult. Therefore, the three chips of RGB are formed into a unit pixel package, so that when the unit pixels are grabbed and fixed on the display panel in a pasting way, the process is simpler.

However, the existing unit pixel packages also have some problems to be solved. For example, as the unit pixels tend to be miniaturized, difficulty in fixing the unit pixels to the display substrate increases, the unreasonable arrangement of the internal structure of the unit pixel package may cause a decrease in the luminous intensity of the unit pixels or a problem of light emission loss, and the smaller light emission angle of the light emitting elements in the unit pixel package may cause uneven light emission of the whole package. The above problems seriously affect the light emitting efficiency, reliability, yield, etc. of the unit pixels, which are needed to be solved by those skilled in the art.

Disclosure of Invention

In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a light emitting device and a display device, so as to avoid the light dead zone of the light emitting device and improve the uniformity of the light emitted from the light emitting device.

To achieve the above and other related objects, the present invention provides a light emitting device comprising:

A transparent layer;

The angle adjusting layers are arranged above the transparent layer at intervals;

The light-emitting elements are correspondingly arranged on the angle adjusting layers, and are in one-to-one correspondence with the angle adjusting layers;

the wiring layer is arranged on the plurality of light-emitting elements and is electrically connected with each light-emitting element.

According to another aspect of the present invention, there is also provided a display device including:

A display substrate;

the light-emitting device is arranged on the surface of the display substrate, the protective electrode of the light-emitting device is electrically connected with the display substrate, and the light-emitting device is the light-emitting device.

Compared with the prior art, the light-emitting device and the display device have at least the following beneficial effects:

The light-emitting device is further provided with a plurality of angle adjusting layers between the transparent layer and the light-emitting elements, and the angle adjusting layers correspond to the light-emitting elements one by one. The angle adjusting layer can adjust the light emitting angle of each light emitting element and enlarge the light emitting angle of each light emitting element so as to avoid light dead zones between adjacent light emitting elements and influence the display effect.

The display device of the present invention includes any one of the light emitting devices described above, and also has the technical effects described above.

Drawings

FIG. 1a is a schematic top view of an embodiment of the invention in embodiment 1;

FIG. 1b is a schematic top view of a wiring layer according to an embodiment of the invention in embodiment 1;

FIG. 2a is a schematic cross-sectional view along A-A' of FIG. 1a of an embodiment 1 of the present invention;

FIG. 2b is an enlarged view of FIG. 2a at A;

FIG. 2c is a schematic cross-sectional view taken along line A-A' of FIG. 1 of another embodiment of the invention in embodiment 1;

FIG. 3 is a schematic top view of an embodiment of the invention in embodiment 2;

FIG. 4a is a schematic view in section B-B' of FIG. 3;

FIG. 4b is a schematic view in section C-C' of FIG. 3;

FIGS. 5a-5c are schematic top view structures of various embodiments of embodiment 2 of the present invention;

FIGS. 6a-6b are schematic top plan views of embodiments of embodiment 2 of the present invention;

FIG. 7 is a cross-sectional view (in the direction A-A' in FIG. 1) of an embodiment of the invention in embodiment 2;

FIG. 8a is a schematic view of a cross section (along direction C-C' in FIG. 3) of an embodiment 3 of the present invention;

FIG. 8B is a schematic view of a cross section (in the direction B-B' in FIG. 3) in an embodiment of the invention in embodiment 3;

FIG. 9 is a schematic cross-sectional view (in the direction C-C' in FIG. 3) of another embodiment of embodiment 3 of the present invention;

FIG. 10 is a schematic view of a cross-section (in the direction C-C' in FIG. 3) of another embodiment of embodiment 3 of the present invention;

FIG. 11 is a schematic view of a cross section (along the direction C-C' in FIG. 3) of another embodiment of the invention in embodiment 3;

FIG. 12a is a schematic view of a cross-section (along the direction C-C' in FIG. 3) of an embodiment of the invention in embodiment 4;

FIG. 12B is a schematic view of a cross-section (in the direction B-B' in FIG. 3) of an embodiment of the invention in embodiment 4;

FIG. 13 is a schematic view of another embodiment of the invention in cross section (in the direction C-C' in FIG. 3) in embodiment 4;

FIG. 14 is a schematic view of a cross-section (in the direction C-C' in FIG. 3) of another embodiment of the invention in embodiment 4;

FIG. 15 is a schematic view of a cross-section (in the direction C-C' in FIG. 3) of another embodiment of the invention in embodiment 4;

FIG. 16a is a schematic view of a cross-section (along the direction C-C' in FIG. 3) of an embodiment of the invention in embodiment 5;

FIG. 16B is a schematic view of a cross-section (in the direction B-B' in FIG. 3) of an embodiment of the invention in embodiment 5;

FIG. 17 is a schematic view of a cross-section (in the direction C-C' in FIG. 3) of another embodiment of embodiment 5 of the present invention;

FIG. 18 is a schematic view of a cross-section (in the direction C-C' in FIG. 3) of still another embodiment of embodiment 5 of the present invention;

FIG. 19 is a schematic view of a cross-section (in the direction C-C' in FIG. 3) of another embodiment of embodiment 5 of the present invention;

FIG. 20 is a schematic view illustrating the light emitting angles of the light emitting devices in the light emitting device shown in FIG. 1a and FIG. 2a according to the embodiment 1 of the present invention;

FIG. 21 is a schematic view of the light emitting angle of the light emitting device of FIG. 17 in embodiment 5 of the present invention;

Fig. 22 is a schematic structural diagram of a display device according to embodiment 6 of the present invention.

List of reference numerals:

100. first region of transparent layer 700a

200. Second region of overhead layer 700b

201. Third region of first surface 700c

202. Second surface 800 insulating layer

203. The lower surface of groove 800a

300. The upper surface of the adhesive layer 800b

301. Side surface of opening 800c

400. Angle adjusting layer 801 opening

401. Notch portion of first angle adjustment layer 802

402. Second angle adjusting layer 900 protection electrode

403. First portion of third angle adjustment layer 900a

501. Second portion of first light-emitting element 900b

502. First protective electrode of second light-emitting element 910

503. Third light emitting element 920 second guard electrode

504. Third guard electrode of first electrode 930

505. Second electrode 940 fourth guard electrode

600. First sidewall of filling layer 901

601. Gap 902 second sidewall

602. Third sidewall of groove 903

610. Fourth sidewall of first filling structure 904

620. Second fill structure 1001 first side

611. Second side of first sub-layer 1002

612. Second sublayer X first direction

700. Wiring layer Y second direction

701. First layer 001 first side

702. Second layer 002 second side

710. First sub-wiring 003 third side

720. Second sub-wiring 004 fourth side

730. Third sub-wiring 005 light emitting device

740. Fourth sub-wiring 006 display substrate

Detailed Description

Further advantages and effects of the present application will become apparent to those skilled in the art from the disclosure of the present application, which is described by the following specific examples. The application may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present application. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict.

It should be noted that the illustrations provided in the embodiments of the application are merely schematic illustrations of the basic concepts of the application, and only the components related to the application are shown in the illustrations, rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated. The structures, proportions, sizes, etc. shown in the drawings are shown only in connection with the present disclosure for understanding and reading by those skilled in the art, and are not intended to limit the scope of the application, which is defined by the claims, so that any structural modifications, proportional changes, or dimensional adjustments should be made without affecting the efficacy or achievement of the present application.

At present, the light emitting device gradually tends to be miniaturized, and the electrode formed on the light emitting device is also reduced, so that when the light emitting device is transferred onto the display panel, an opening is formed in the insulating layer on the side, with the electrode, of the light emitting device, when the light emitting device is transferred, negative pressure is formed on the blue film through the opening, a phenomenon that the film is difficult to fall off is caused during transfer, further, the transfer efficiency is reduced, and if the process of falling off is manually interfered, unavoidable damage is caused to the light emitting device, and the yield of devices is affected. Meanwhile, due to the shrinking package size of the light emitting device, the design of the wiring layer in the light emitting device also faces certain challenges.

The light emitting device also faces the problem of releasing the photoelectric property of the LED chip. When the light emitting device is applied to the application field of the direct display screen, in order to avoid display problems caused by reflection, scattering, chip side light crosstalk and the like, the back surface of the package of the light emitting device is usually made black, and a black layer on the back surface of the package inevitably causes loss of light emitting effect, thereby further inhibiting release of the light performance of the chip.

Micro LED chips are smaller and smaller in size, the two-dimensional effect of the light-emitting device package is continuously enhanced, the electric field and the current density in the package are continuously increased, and the sensitivity of circuit performance to defects is greatly increased. Meanwhile, the new application requires Micro LED products to have increasingly serious reliability problems under severe conditions such as high pressure, high temperature, strong radiation, high frequency, high power and the like.

The light emitting elements in the light emitting device are arranged at intervals, and as the light emitting angle of each light emitting element is smaller, a light emitting blind area exists in the area between the adjacent light emitting elements, and the light emitting effect is affected.

In order to solve the above technical problem, the present embodiment provides a light emitting device, including:

A transparent layer;

The light emitting device in this embodiment is provided with a plurality of angle adjusting layers between the transparent layer and the plurality of light emitting elements, and the angle adjusting layers are in one-to-one correspondence with the light emitting elements. The angle adjusting layer can adjust the light emitting angle of each light emitting element and enlarge the light emitting angle of each light emitting element so as to avoid light dead zones between adjacent light emitting elements and influence the display effect.

Optionally, the light emitting device further includes:

The adhesive layer is arranged between the transparent layer and the plurality of light-emitting elements, and the angle adjusting layer is arranged on the surface of the adhesive layer, which is close to the plurality of light-emitting elements.

Optionally, the light emitting device further includes:

The adhesive layer is arranged between the transparent layer and the plurality of light-emitting elements, a plurality of openings are formed in the adhesive layer, and an angle adjusting layer is embedded in each opening.

Optionally, the light emitting device further includes:

And one part of the adhesive layer is arranged between the transparent layer and the plurality of light-emitting elements, and the other part of the adhesive layer is arranged between the angle adjusting layer and the plurality of light-emitting elements.

Optionally, the area of each angle-adjusting layer is larger than the area of each light-emitting element.

Optionally, the angle adjusting layer may have a reflectance of 80% or more for light having an angle of incidence of 0 to 20 degrees, a reflectance of 45% to 60% for light having an angle of incidence of 20 to 35 degrees, and a reflectance of 40% or less for light having an angle of incidence of 35 to 90 degrees.

Alternatively, the plurality of light emitting elements includes three light emitting elements that emit light of different colors from each other, respectively, a red light emitting element, a green light emitting element, and a blue light emitting element.

Optionally, the angle adjusting layer includes:

The first angle adjusting layer corresponds to the red light emitting element, and can have more than 80% of reflectivity for light with the wavelength range of 620 nm-760 nm and the incidence angle of 0-20 degrees, 45% -60% of reflectivity for light with the wavelength range of 620 nm-760 nm and the incidence angle of 20-35 degrees, and less than 40% of reflectivity for light with the wavelength range of 620 nm-760 nm and the incidence angle of 35-90 degrees;

The second angle adjusting layer is corresponding to the green light emitting element, and can have a reflectance of 80% or more for light with a wavelength range of 490nm to 577nm and an incident angle of 0 to 20 degrees, a reflectance of 45% to 60% for light with a wavelength range of 490nm to 577nm and an incident angle of 20 to 35 degrees, and a reflectance of 40% or less for light with a wavelength range of 490nm to 577nm and an incident angle of 35 to 90 degrees;

the third angle adjustment layer is provided in correspondence with the blue light emitting element, and is capable of having a reflectance of 80% or more for light having a wavelength of 420nm to 480nm and an incident angle of 0 to 20 degrees, a reflectance of 45% to 60% for light having a wavelength of 420nm to 480nm and an incident angle of 20 to 35 degrees, and a reflectance of 40% or less for light having a wavelength of 420nm to 480nm and an incident angle of 35 to 90 degrees.

Optionally, the plurality of light emitting elements includes three light emitting elements, each light emitting element is a blue light emitting element, and the angle adjusting layer corresponding to each light emitting element is the same angle adjusting layer.

Alternatively, each angle adjusting layer can have a reflectance of 80% or more for light having a wavelength of 420nm to 480nm and an incident angle of 0 to 20 degrees, a reflectance of 45% to 60% for light having a wavelength of 420nm to 480nm and an incident angle of 20 to 35 degrees, and a reflectance of 40% or less for light having a wavelength of 420nm to 480nm and an incident angle of 35 to 90 degrees.

Optionally, the range of the light emitting angle of each light emitting element is between-80 degrees and +80 degrees.

Alternatively, the angle adjusting layer is a DBR reflecting layer formed by alternately laminating materials of different refractive indexes.

Optionally, the material of the DBR reflective layer is at least two of the different materials in SiO ₂、TiO₂、ZnO₂、ZrO₂、Cu₂O₃.

Alternatively, the DBR reflective layer is a laminated structure consisting of a SiO ₂ layer and a TiO ₂ layer.

Optionally, the light emitting device further includes:

And a filling layer filled between the adjacent light emitting elements.

Optionally, the wiring layer includes:

the first layer is attached to the light-emitting element and the filling layer and is electrically connected with the light-emitting element;

and a second layer, one side of which is electrically connected with the first layer.

Optionally, the light emitting device further includes a plurality of protection electrodes formed on the wiring layer at intervals and electrically connected to the wiring layer.

Optionally, the light emitting device further includes:

and an insulating layer formed at least on a part of the wiring layer.

The present embodiment also provides a display device including:

A display substrate;

At least one light emitting device is arranged on the surface of the display substrate, the light emitting device is electrically connected with the display substrate, and the light emitting device is any one of the light emitting devices. Similarly, the display device according to the present embodiment includes the light-emitting device, and has the technical effects of the light-emitting device.

The present embodiment will be described in detail with reference to specific embodiments.

Example 1

Fig. 1a is a schematic top view of an embodiment of the present embodiment, and fig. 2a is a schematic cross-sectional view along A-A' of fig. 1 a.

The present embodiment provides a light emitting device including a transparent layer 100, a plurality of light emitting elements, a wiring layer 700, and an insulating layer 800, referring to fig. 1a and 2 a.

Referring to fig. 1a and 2a, the transparent layer 100 may have a light transmittance of 60% or more in the visible light range. Alternatively, the transparent layer 100 may be a transparent substrate, which may be a light transmissive substrate of PET, glass, quartz, sapphire, transparent ceramic, or the like. The light emitting device needs to have a certain thickness for the client to use, so the thickness of the transparent layer 100 is preferably greater than 10 μm, particularly preferably 30 μm to 50 μm, 50 μm to 100 μm or 100 μm to 300 μm. A plurality of light emitting elements are provided on the surface of the transparent layer 100. The surface of the transparent layer 100 away from the light emitting element is the light emitting surface of the light emitting device, that is, the light emitted from the light emitting element is emitted outwards through the transparent layer 100.

Referring to fig. 2a, a plurality of light emitting elements are disposed on a transparent layer 100. Since different light emitting elements generally have different thicknesses, by providing the adhesive layer 300 between the transparent layer 100 and the light emitting elements, the material of the adhesive layer 300 may be a material having elasticity such as silicone rubber, and thus, the light emitting elements may be partially sunk into the adhesive layer 300 to maintain the electrode surfaces of the light emitting elements at the same level, and the height difference of the light emitting surfaces of the respective light emitting elements may be reduced, so that light emitted from the side surfaces of the light emitting elements is absorbed by the filling layer 600 described below as much as possible, to improve the contrast of the light emitting device. The thickness of the adhesive layer 300 is preferably 1 μm to 15 μm or 3 μm to 10 μm. If the thickness of the adhesive layer 300 is greater than 15 μm, the alignment accuracy of the light emitting element may be affected.

The light emitting device in this embodiment mainly refers to a micro-scale light emitting diode, and its width or length ranges from 2 to 5 μm, from 5 to 10 μm, from 10 to 20 μm, from 20 to 50 μm or from 50 to 100 μm, and its thickness ranges from 2 to 15 μm, preferably from 5 to 10 μm.

Specifically, each light emitting element includes a semiconductor stacked layer, and the semiconductor stacked layer may include a first semiconductor layer, a second semiconductor layer, and an active layer disposed therebetween, which are sequentially arranged, wherein the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, and the active layer is a multi-layer quantum well layer that can provide radiation of red light or green light or blue light. The N-type semiconductor layer, the multi-layer quantum well layer, and the P-type semiconductor layer are only basic constituent units of the light emitting element 500, and the light emitting element 500 may further include other functional structure layers having an optimization effect on the performance of the light emitting element 500.

The first light emitting element 501, the second light emitting element 502, and the third light emitting element 503 respectively radiate light of different wavelength ranges, for example, the first light emitting element 501 radiates blue light, the second light emitting element 502 radiates green light, and the third light emitting element 503 radiates red light. In an embodiment, the different light emitting elements 500 may have different semiconductor stacked layers so as to directly radiate light in different wavelength ranges, and specific materials of the semiconductor stacked layers are selected according to the wavelength of the radiated light, which includes but is not limited to aluminum gallium arsenide, gallium arsenide phosphide, aluminum gallium indium phosphide, gallium nitride, indium gallium nitride, zinc selenide, or gallium phosphide. In another embodiment, the different light emitting elements 500 may have the same semiconductor stacked layers, for example, the semiconductor stacked layers in the first light emitting element 501, the second light emitting element 502, and the third light emitting element 503 all radiate blue light, and a wavelength conversion layer is disposed on the light emitting surface of the second light emitting element 502 to convert the radiated blue light into green light, and a wavelength conversion layer is disposed on the light emitting surface of the third light emitting element 503 to convert the radiated blue light into red light.

Each light emitting element 500 further includes a first electrode and a second electrode. The semiconductor stack layer has a mesa exposing the first semiconductor layer, a first electrode formed on the mesa and electrically connected to the first semiconductor layer, and a second electrode formed on the second semiconductor layer and electrically connected to the second semiconductor layer.

Referring to fig. 2a, a filling layer 600 is disposed between adjacent light emitting elements or around the sidewalls of the light emitting elements, and the filling layer 600 is disposed to prevent color mixing or light interference between the adjacent light emitting elements, thereby improving the contrast of the light emitting device. The filling layer 600 is provided as a black glue layer absorbing light. Specifically, the filling layer 600 may be a member formed by dispersing a black filling component having a particle diameter of not more than 1 μm in a transparent or semitransparent material such as silica gel, epoxy resin, polyimide, low temperature glass, polysiloxane, polysilazane, etc., and the black filling component in the filling layer 600 includes, but is not limited to, carbon black, titanium nitride, iron oxide, ferroferric oxide, iron powder, etc. The particle size range of the black filler is preferably 10 to 100nm, or 100 to 200nm, or 200 to 300nm, or 300 to 500nm. Black dye may also be used for the filler layer 600.

Referring to fig. 2a, a wiring layer 700 is disposed over the light emitting elements and the filling layer 600, and is electrically connected to each of the light emitting elements through metal wires therein. The wiring layer 700 includes a plurality of wirings, and the periphery of the wiring layer 700 is filled with an insulating layer to electrically isolate adjacent wirings. The wiring layer 700 may be a single layer or a plurality of layers made of at least one material of titanium, copper, chromium, nickel, gold, platinum, aluminum, titanium nitride, tantalum, or the like. In this embodiment, the wiring layer 700 includes a two-layer structure, specifically, a first layer 701 and a second layer 702, the first layer 701 is in direct contact with the light emitting element, and the second layer 702 is formed over the first layer 701. The first layer 701 is used to adhere the second layer 702 to the light emitting element and the filling layer 600, and the second layer 702 mainly plays a role of electric conduction. The material of the first layer 701 includes, but is not limited to, one or more of titanium, nickel, titanium nitride, tantalum nitride, or tantalum, and the material of the second layer 702 includes, but is not limited to, one or more of copper, aluminum, or gold. The wiring layer 700 may be prepared by sputtering, evaporation, or the like.

In an embodiment, referring to fig. 1b, the wiring layer 700 includes a first sub-wiring 710, a second sub-wiring 720, a third sub-wiring 730, and a fourth sub-wiring 740, wherein the first sub-wiring 710 serves as a common wiring, first electrodes in the first light emitting element 501, the second light emitting element 502, and the third light emitting element 503 are commonly connected to the first sub-wiring 710, second electrodes in the first light emitting element 501 are connected to the second sub-wiring 720, second electrodes in the second light emitting element 502 are connected to the third sub-wiring 730, and second electrodes in the third light emitting element 503 are connected to the fourth sub-wiring 740. The wiring layer 300 may be formed together on the filling layer 210.

Or the first sub-wiring 710 serves as a common wiring, the second electrodes in the first light emitting element 501, the second light emitting element 502, and the third light emitting element 503 are commonly connected to the first sub-wiring 710, the first electrode in the first light emitting element 501 is connected to the second sub-wiring 720, the first electrode in the second light emitting element 502 is connected to the third sub-wiring 730, and the first electrode in the third light emitting element 503 is connected to the fourth sub-wiring 740. The wiring layer 700 may be formed together on the filling layer 600. In an embodiment, referring to fig. 1b, each sub-wiring includes a first region 700a connected to a light emitting element, a second region 700b bonded to a circuit substrate through a bonding material, and a third region 700c connecting the first region 700a and the second region 700 b. The first and third regions 700a and 700b may have a linear structure having a width of 50 μm or less, preferably 5 μm to 20 μm or 10 μm to 30 μm or 20 μm to 40 μm. Since the light emitting device has a small size, the space for forming the wiring layer 700 on the light emitting element is limited, and if the width is more than 50 μm, electrical defects are likely to occur, and if the width is less than 5 μm, the structures of the first region 700a and the third region 700b are too fragile, and fracture is likely to occur. The shape of the second region 700b may be set to any shape, such as a rectangle, a circle, or other polygonal shape, and in this embodiment, the second region 700b is rectangular or rectangular-like. The second region 700b is a position for subsequent bonding with the circuit substrate by the bonding material, and if the area is too small, the bonding between the light emitting device and the substrate is unstable, and thus a certain area needs to be maintained.

Referring to fig. 1a and 2a, an insulating layer 800 is formed on a wiring layer 700, and the insulating layer 800 may be partially removed by exposing and developing the insulating layer 800, and a plurality of opening portions 801 are formed to expose a partial surface of the wiring layer 700, i.e., a second region 700b of the wiring layer 700. In one embodiment, referring to fig. 2a, the opening 801 of the insulating layer 800 includes a lower surface 800a contacting the wiring layer 700, an upper surface 800b opposite to the lower surface 800a, and a side surface 800c connecting between the upper surface 800b and the lower surface 800a, and an angle α is formed between the side surface 800c and the lower surface 800a, and the angle α is less than or equal to 80 °. For example, 70 ° or less or 60 ° or 50 ° or less.

In an embodiment, the insulating layer 800 may be formed of epoxy, polysiloxane or photoresist, so as to prevent the wiring layer 700 from being oxidized and electrically isolate different wirings, and avoid the occurrence of leakage failure of the light emitting device.

The light emitting device is subsequently mounted on the circuit substrate by using a bonding material such as solder, and specifically, the bonding material may bond the wiring layer 700 exposed to the opening 801 of the insulating layer 800 and the electrode pad on the circuit substrate, and the exposed surface of the wiring layer 700 may be easily oxidized in air, which may easily cause electrical defects and other problems. Thus, in an embodiment, referring to fig. 1a and fig. 2a, the protection electrode 900 is formed on the exposed surface of the wiring layer in the opening 801 of the insulating layer 800, that is, on the second region 700b, and when the material forming the wiring layer 700 is easily oxidized, for example, when the surface metal of the wiring layer 700 is Cu in an embodiment, the protection electrode 900 is formed to protect the exposed wiring layer 700. Wherein a plurality of protective electrodes 900 are formed on the second region 700b of the exposed wiring layer 700 to form an electrical connection with the wiring layer 700. The shape of the guard electrode 900 may be any shape, such as a rectangle, a circle, or other polygonal shape, and in this embodiment, the guard electrode 900 is illustrated as being rectangular or rectangular-like, and referring to fig. 1a, each guard electrode 900 includes four sidewalls, namely, a first sidewall 901, a second sidewall 902, a third sidewall 903, and a fourth sidewall 904 in sequence. Wherein the first side wall 901 and the second side wall 902 of each of the guard electrodes 900 are disposed away from the edge of the light emitting device, near the center of the light emitting device. In the present embodiment, four guard electrodes 900 are provided in total.

In an embodiment, referring to fig. 1a, the light emitting device comprises a first side 001, a second side 002, a third side 003 and a fourth side 004 connected in sequence, wherein the first side 001 and the third side 003 are substantially parallel, the second side 002 and the fourth side 004 are substantially parallel, or, as it were, the first side 001 and the third side 003 are parallel, and the second side 002 and the third side 004 are parallel. Wherein the first side 001 is substantially parallel to the first side wall 901, the second side 002 is substantially parallel to the second side wall 902, the third side 003 is substantially parallel to the third side wall 903, and the fourth side 004 is substantially parallel to the fourth side wall 904.

In one embodiment, referring to fig. 1a, the length of the first side 001 is equal to the length of the second side 002, (the error range can be controlled within 10% due to the measurement error), and the length of the first side 901 of the guard electrode 900 is equal to the length of the second side 902 (the error range can be controlled within 10% due to the measurement error).

In another embodiment, referring to fig. 1a, the length of the first side 001 is smaller than the length of the second side 002, and the plurality of light emitting elements are arranged in the direction of the second side 002. The ratio of the length of the first side 001 to the length of the second side 002 is greater than the ratio of the length of the first side wall 901 to the length of the second side wall 902 of the guard electrode 900. In a preferred embodiment, when the ratio of the length of the first side 001 to the length of the second side 002 is between 0.6 and 0.9, the ratio of the length of the first side wall 901 to the length of the second side wall 902 of the protection electrode 900 is between 0.4 and 0.8, so that the size of the light emitting device can be further reduced, and a sufficient area is left for the protection electrode to be combined with the display panel.

In an embodiment, referring to fig. 2b, the guard electrode 900 includes a first portion 900a formed on the second region 700b of the wiring layer 700 and a second portion 900b formed on the side surface 800c of the opening 801 of the insulating layer 800, and the first portion 900a and the second portion 900b may contact each other and be continuous to form good contact with solder paste at the time of subsequent soldering. Wherein the thickness of the first portion 900a is greater than the thickness of the second portion 900b, and the thickness of the second portion 900b gradually decreases with distance from the first portion 900 a.

In an embodiment, the material of the protection electrode 900 may be one or more of nickel, gold, platinum, etc., and may also be chromium, tin, or palladium. The thickness of the guard electrode 900 is 1-6 μm, for example, the thickness of the guard electrode 900 may be 2 μm,3 μm, 4 μm, 5 μm, etc.

In one embodiment, the protective electrode 900 includes a first sub-layer and a second sub-layer, wherein the thickness of the first sub-layer is greater than that of the second sub-layer, and in a preferred embodiment, the first sub-layer is a nickel layer, the second sub-layer is a gold layer, the thickness of the first sub-layer is 2 μm to 5 μm, and the thickness of the second sub-layer isThe setting of the thickness ratio can realize better flatness.

In an embodiment, the thickness of the protection electrode 900 is greater than the thickness of the wiring layer 700, and the thickness of the protection electrode 900 is less than the thickness of the insulating layer 800. In one embodiment, the thickness of the insulating layer 800 is 2-10 μm, for example, the thickness of the insulating layer 800 may be 4 μm, 5 μm, 6 μm, 7 μm, etc., and the thicker insulating layer 800 is in the above range for enhancing the mechanical strength of the product, but if the insulating layer 800 is too thick, electrical defects may be caused when the thickness exceeds the above range.

In an embodiment, referring to fig. 2a, the thickness of the protection electrode 900 is smaller than that of the insulating layer 800, a minimum distance D1 is provided between the surface of the protection electrode 900 and the upper surface 800b of the insulating layer 800, the thickness of the insulating layer 800 is H1, and the height difference between D1 and H1 is 0-10 μm. If D1 is too large, the light-emitting device may need to be mounted on the circuit substrate with a larger volume of bonding material such as solder, and the larger D1, the longer the bonding material is heated, which may affect the performance of the light-emitting device.

Fig. 2c is a schematic cross-sectional view along A-A' of fig. 1a of another embodiment of the invention in embodiment 1. In an embodiment, referring to fig. 1a and 2c, the protective electrode 900 is formed on the second region 700b of the wiring layer 700, and the insulating layer 800 covers the surface of the wiring layer 700 and the sidewall and part of the surface of the protective electrode 900. Specifically, the insulating layer 800 is formed over the wiring layer 700, and an opening 801 is formed to expose the surface of the protective electrode 900, and the projection of the opening 801 has an overlapping area with the protective electrode 900. In a preferred embodiment, the projection of the opening 801 is located within the projection of the guard electrode 900. The edge and the sidewall of the protective electrode 900 are covered with the insulating layer 800, so that external moisture can be prevented from entering the inside of the light emitting device, thereby improving the reliability of the light emitting device. In addition, in the present embodiment, the protective electrode 900 may be formed on the second region 700b of the wiring layer 700 by a wet process, and then the insulating layer 800 covers the surface of the wiring layer 700 and the sidewall and part of the surface of the protective electrode 900, and the sidewall 800c of the opening 801 of the insulating layer 800 and the surface of the wiring layer 700 may be prevented from forming cracks, thereby improving the reliability of the light emitting device.

Example 2

The present embodiment provides a light emitting device, which is the same as the light emitting device in embodiment 1, and the difference is that:

fig. 3 is a schematic top view of an embodiment of the present invention, fig. 4a is a schematic cross-sectional view along the direction B-B 'of fig. 3, and fig. 4B is a schematic cross-sectional view along the direction C-C' of fig. 3.

Referring to fig. 3 to 4b, a plurality of notch portions 802 are formed at intervals at the edge of the insulating layer 800 in the present embodiment. Alternatively, the wiring layer 700 (i.e., the second region 700 b) may be exposed in each of the notch portions 802, and the protective electrode 900 formed on the second region 700b of the wiring layer 700 may be also exposed. Since the thickness of the guard electrode 900 is smaller than that of the insulating layer 800 in embodiment 1, the opening 801 is formed with a recess in the surface of the insulating layer 800. Meanwhile, since the light emitting element in the present embodiment is smaller in size, the package is also smaller in size, resulting in smaller size of the protective electrode 900 formed exposed on the surface of the insulating layer 800, and accordingly, the recess formed on the insulating layer 800 is also smaller in size. When the blue film is adopted to transfer the whole light-emitting device, the blue film is attached to one side of the insulating layer 800 with the concave shape of the light-emitting device, and because small concave shapes exist on the surface of the insulating layer 800, large negative pressure is easily generated when the mold reversing procedure is carried out due to small size of the concave shapes, high-efficiency mold reversing cannot be carried out on the light-emitting device, and transfer efficiency is affected. Therefore, the edges of the insulating layer 800 in this embodiment form a plurality of notch portions 802, the notch portions 802 expose at least a portion of the edges of the light emitting device, and since the protective electrode 900 is exposed in the notch portions 802 located at the edges of the insulating layer 800, no recess is formed on the surface of the insulating layer 800, and no negative pressure is generated between the light emitting device and the blue film when the entire light emitting device is transferred, and further the light emitting device in this embodiment can improve the transfer efficiency and the device yield.

Referring to fig. 3, a minimum distance D2 is provided between the edge of the notch 802 of the insulating layer 800 and the edge of the light emitting device, the minimum distance D2 is less than 120 μm, and optionally, the minimum distance may be set within 20-80 μm, so that the insulating layer may completely cover the wiring layer or the line on the light emitting device.

In an embodiment, referring to fig. 3, each notch 802 includes a first edge and a second edge, the first edge and the second edge 002 of the notch 802 are disposed substantially parallel, the second edge and the first edge 001 of the notch 802 are disposed substantially parallel, the ratio of the minimum distance D2 from the first edge to the second edge 002 to the first edge 001 is 0.1-0.5, and the ratio of the minimum distance D3 from the second edge to the first edge 001 to the length of the second edge 002 is 0.3-0.6.

In an embodiment, referring to fig. 3, the light emitting device includes a first side 001, a second side 002, a third side 003 and a fourth side 004, the first side 001 and the third side 003 are disposed opposite to each other, the second side 002 and the fourth side 004 are disposed opposite to each other, the length of the second side 002 is greater than the length of the first side 001, the distance D4 between two adjacent guard electrodes 900 is greater than 40 μm along the extending direction of the second side 002, optionally, the ratio of the distance D4 between two adjacent guard electrodes 900 to the length of the second side 002 is 1:4, and the ratio of the distance D4 between two adjacent guard electrodes to the length of the first side 001 is 1:2. Optionally, a distance D4 between two adjacent guard electrodes along the extending direction of the second side 002 is 40 μm to 100 μm.

In an embodiment, referring to fig. 3 to fig. 4b, a plurality of light emitting elements are disposed on the transparent layer 100 at intervals, and the projected area of the insulating layer 800 on the transparent layer 100 occupies an area ratio of 0.4 to 0.8 of the transparent layer 100. Optionally, the projection area of the notch 802 of the plurality of insulating layers 800 on the transparent layer 100 occupies 0.2 to 0.6 of the area of the transparent layer 100.

Referring to fig. 3 to 4b, in the present embodiment, the size of each of the protection electrodes 900 is smaller than the size of each of the notch portions 802, each of the protection electrodes 900 is exposed in each of the notch portions 802, and the edge of the protection electrode 900 is spaced from the edge of the light emitting device, so that the protection electrode 900 can be prevented from being formed at the edge of the wiring layer 700. In this embodiment, the protective electrode 900 is disposed near the center of the light emitting device, so that the protective electrode 900 is prevented from being exposed, and leakage or damage to the protective electrode 900 is prevented. Optionally, the material of the guard electrode 900 is tin, gold, or a tin-gold alloy. The area of the protective electrode 900 exposed in the notch 802 of the insulating layer 800 is far smaller than that of the wiring layer 700, and the protective electrode 900 is only exposed in the notch 802 or the opening 801 instead of directly plating tin and gold materials on the whole wiring layer 700, so that the consumption of tin and gold materials can be saved, and the production cost can be reduced.

In a specific embodiment of the present embodiment, referring to fig. 5a to 5b, the insulating layer 800 includes two notch portions 802 disposed at intervals, two guard electrodes 900 are exposed in each notch portion 802, and two guard electrodes 900 are disposed at intervals in the notch portion 802. For example, the insulating layer 800 completely covers the second sidewall 902 of the guard electrode 900 such that the insulating layer 800 has a "|" shape as shown in fig. 5 a. The insulating layer 800 completely covers the second sidewall 902 and partially covers the third sidewall 903 adjacent to the second sidewall 902, so that the insulating layer 800 has an "i" shape, as shown in fig. 5 b. Also, the insulating layer 800 may cover not only the sidewall of the guard electrode 900 but also a part of the surface of the guard electrode 900 as shown in fig. 5 b. In the above embodiment, the length of the first sidewall 901 of the guard electrode 900 is greater than the length of the second sidewall 902.

In a specific embodiment, referring to fig. 5c, the insulating layer 800 includes three spaced-apart notch portions 802, and the insulating layer 800 completely covers the second sidewall 902 of each of the guard electrodes 900, and covers the first sidewall 901 of the adjacent two guard electrodes 900 disposed opposite to each other to completely cover the bottom wiring layer.

In a specific embodiment of the present embodiment, referring to fig. 3 and 6a to 6b, the insulating layer 800 includes four notch portions 802 disposed at intervals, and one protection electrode 900 is exposed in each notch portion 802. For example, the insulating layer 800 completely covers the first sidewall 901 and the second sidewall 902 of each of the guard electrodes 900 such that the insulating layer 800 has a cross shape as shown in fig. 3. The insulating layer 800 completely covers the first and second sidewalls 901 and 902 of each of the guard electrodes 900 and extends from the first sidewall 901 to the fourth sidewall 904 and from the second sidewall 902 to the third sidewall 903, as shown in fig. 6a or 6 b. Meanwhile, as shown in fig. 6b, the insulating layer 800 covers not only the sidewall of the guard electrode 900 but also a part of the surface of the guard electrode 900.

It should be noted that, the insulating layer 800 in the present embodiment may have any shape, so long as the surface of the insulating layer 800 is not recessed, the problem of avoiding negative pressure between the blue film and the light emitting device can be solved. Meanwhile, the guard electrode 900 may be provided to solve the above-described problems in the present embodiment. For example, as shown in fig. 7, the thickness of the protective electrode 900 is set to be greater than or equal to the thickness of the insulating layer 800, so that the surface of the insulating layer 800 is not recessed, and the problem of negative pressure between the blue film and the light emitting device is avoided.

Example 3

The same points as the light emitting device of fig. 1a and 2a or fig. 3 and 4a-4b described in embodiment 1 are not described herein, and the difference is that:

Fig. 8a is a schematic cross-sectional view taken along the direction C-C 'in fig. 3 in one embodiment of the present invention, and fig. 8B is a schematic cross-sectional view taken along the direction B-B' in fig. 3 in one embodiment of the present invention. Referring to fig. 8a or 8b, in the present embodiment, the filling layer 600 formed between adjacent light emitting elements includes a first filling structure disposed at least at a sidewall of each light emitting element, and the first filling structure includes a first sub-layer 611 and a second sub-layer 612 formed on the first sub-layer 611, and the thickness of the first sub-layer 611 is smaller than that of the second sub-layer 612. The first sub-layer 611 can absorb light emitted from adjacent light emitting elements, so as to avoid optical crosstalk between the adjacent light emitting elements, and form better contrast with the second sub-layer 612. The second sub-layer 612 can reflect light at the sidewalls of the light emitting elements to the light emitting direction, as well as avoid optical crosstalk between adjacent light emitting elements. Meanwhile, due to the existence of the second sub-layer 612, the contrast ratio of the light emitting device can be improved, which is beneficial to improving the display effect. The filling layer 600 in embodiment 1 is formed as a whole black light-absorbing layer, and light emitted from the side of the chip is absorbed only by the black light-absorbing layer, which increases the light loss of the chip itself. Therefore, the light output amount of the present embodiment is increased and the display effect is better than that of the filling layer 600 of embodiment 1.

Optionally, the first sub-layer 611 in this embodiment is a black material layer, where the black material layer contains a black filling component, and the black filling component includes at least one of carbon black, titanium nitride, iron oxide, ferroferric oxide, or iron powder. The second sub-layer 612 is a white reflective material layer or a DBR reflective layer, and may specifically be a white reflective material layer, and further the white reflective material layer can form a stronger contrast with the black material layer of the first sub-layer 611. Alternatively, the white reflective material layer may be a polyethylene terephthalate foam, high reflective white polypropylene, white Polycarbonate (PC) resin, or the like.

In particular, referring to fig. 8a, 8b, or 9, the filling layer 600 may be integrally formed as a first filling structure 610, the first filling structure 610 including a first sub-layer 611 and a second sub-layer 612.

In one embodiment of the present embodiment, as shown in fig. 8a and 8b, the filling layer 600 is integrally formed into a first filling structure 610, and in the direction from the light emitting element to the wiring layer 700, the first filling structure 610 sequentially includes a first sub-layer 611 and a second sub-layer 612 along the sidewall of the light emitting element, and the ratio of the thicknesses of the first sub-layer 611 and the second sub-layer 612 is 0.2 to 1, optionally, the ratio of the thicknesses of the first sub-layer 611 and the second sub-layer 612 is 0.4 to 0.8. For example, the ratio of the thicknesses of the first sub-layer 611 and the second sub-layer 612 is 5:8, and the ratio of the first sub-layer 611 to the second sub-layer 612 can effectively improve the brightness of the light emitting device. The luminance of the red light-emitting element, the green light-emitting element and the blue light-emitting element in the light-emitting device of fig. 1 and 2 in example 1 can be 100% by testing the light-emitting devices of fig. 1 and 2 and the light-emitting device of this example. In the light emitting device obtained in this embodiment, the brightness of the red light emitting element can be increased to 101%, the brightness of the green light emitting element can be increased to 102.5%, and the brightness of the blue light emitting element can be increased to 103%. In another embodiment of the present embodiment, as shown in fig. 9, the filling layer 600 is integrally formed with the first filling structure 610, and along the direction from the light emitting element to the wiring layer 700, the filling structure sequentially includes the first sub-layer 611 and the second sub-layer 612 along the sidewall of the light emitting element, where the ratio of the thicknesses of the first sub-layer 611 and the second sub-layer 612 is 0.2-1, and meanwhile, in order to avoid crosstalk caused by lateral emission of the light emitting device away from the light. The insulating layer 800 in the present embodiment is also provided as a black material layer containing a black filling component including at least one of carbon black, titanium nitride, iron oxide, ferroferric oxide, or iron powder. Further, the insulating layer 800 can prevent crosstalk caused by lateral emission of back light. Optionally, a material layer is also formed between the two electrodes of each light emitting element, which is not based on the same process as the insulating layer 800, and may be a black material layer or a white reflective material layer, for example, when the material layer is a white material layer, light incident on the back surface can be reflected, so as to increase the brightness of the light emitting device.

Referring to fig. 10 or 11, the filling layer 600 may also include a first filling structure 610 and a second filling structure 620. In one embodiment of the present embodiment, as shown in fig. 10, the filling layer 600 includes a first filling structure 610 and a second filling structure 620, a gap 601 is formed between the second filling structure 620 and the sidewall of the light emitting element, and the first filling structure 610 is filled in the gap 601. Along the direction from the light emitting element to the wiring layer 700, the filling structure sequentially comprises a first sub-layer 611 and a second sub-layer 612 along the side wall of the light emitting element, and the ratio of the thicknesses of the first sub-layer 611 and the second sub-layer 612 is 0.2-1. In a specific embodiment of the present embodiment, as shown in fig. 11, the filling layer 600 includes a first filling structure 610 and a second filling structure 620, the surface of the second filling structure 620 near the wiring layer 700 is formed with a groove 203, the bottom wall of the groove 203 is formed as a first sub-layer 611, and a second sub-layer 612 is formed in the groove 203. And, the second sub-layer 612 is formed as a DBR reflective layer. Along the direction from the light emitting element to the wiring layer 700, the filling structure sequentially comprises a first sub-layer 611 and a second sub-layer 612 along the side wall of the light emitting element, and the ratio of the thicknesses of the first sub-layer 611 and the second sub-layer 612 is 0.2-1.

Alternatively, the adhesive layer 300 for bonding the transparent layer 100 and the plurality of light emitting elements may be replaced with a high refractive index material to avoid light emission of the light emitting elements from being reduced at the interface of the light emitting elements and the adhesive layer 300, further increasing the brightness of the light emitting device. For example, the material of the adhesive layer 300 may be epoxy.

Example 4

Fig. 12a is a schematic cross-sectional view along the line C-C 'in fig. 3 of one embodiment of the present invention, and fig. 12B is a schematic cross-sectional view along the line B-B' in fig. 3 of one embodiment of the present invention.

Referring to fig. 12a or 12b, in the present embodiment, an empty layer 200 is provided between a transparent layer 100 and an adhesive layer 300, and the empty layer 200 is formed on the surface of the transparent layer 100. The overhead layer 200 includes oppositely disposed first and second surfaces 201, 202. The first surface 201 is adhered to the transparent layer 100, at least one groove 602 is formed on the second surface 202, and the groove 602 is recessed from the second surface 202 to the first surface 201. The adhesive layer 300 is formed on at least the second surface 202 of the overhead layer 200. A plurality of light emitting elements are disposed on the adhesive layer 300 at intervals, at least one light emitting element corresponds to one groove 602, and a portion of the surface of the light emitting element is in contact with the adhesive layer 300. When the light emitting intensity of the light emitting element is large or the light emitting intensity is abrupt, the adhesive layer 300 on the light emitting side of the light emitting element is aged in a high temperature or high humidity environment, so that the thickness of the adhesive layer 300 is reduced or bubbles are generated in the adhesive layer, and the change of the structure of the adhesive layer 300 also affects the light emitted from the light emitting element to the transparent layer 100, even changes the light emitting intensity of the light emitting element, so that the product is unstable in reliability, and particularly for a blue light emitting element, the phenomenon is remarkable. In this embodiment, the empty layer 200 is disposed between the transparent layer 100 and the adhesive layer 300, and the adhesive layer 300 is separated from the light emitting region of the light emitting element by the groove 602 disposed on the empty layer 200, so as to avoid the influence of the light emitting element on the property of the adhesive layer 300, and further finally influence the light emitting intensity of the whole device, and improve the reliability of the device.

In particular, referring to fig. 12a, 12b or 13, the grooves 602 formed on the overhead layer 200 may also extend completely through the overhead layer 200 to expose the surface of the transparent layer 100. The overhead layer 200 may be a light-transmitting layer or a photoresist layer. Optionally, the photoresist layer contains a black filling component, wherein the black filling component comprises at least one of carbon black, titanium nitride, ferric oxide, ferroferric oxide or iron powder. Alternatively, the light-transmitting layer may be transparent silica, transparent polyimide, or the like. Referring to fig. 14, the grooves 602 formed on the overhead layer 200 may partially penetrate the overhead layer 200 such that the depth of the grooves 602 is less than the thickness of the overhead layer 200. At this time, the overhead layer 200 is integrally formed as a light-transmitting layer to avoid light-emitting shielding of the light-emitting element.

Referring to fig. 12a, 12b or 13, an adhesive layer 300 is formed on at least the second surface 202. Alternatively, referring to fig. 13, the adhesive layer 300 may be formed only on the second surface 202, or referring to fig. 12a, 12b, 14 or 15, and may be formed on both the second surface 202 and the inner wall of the groove 602, when the adhesive layer 300 is formed on the inner wall of the groove 602, it is necessary to control the distance between the adhesive layer 300 on the bottom wall of the groove 602 and the light emitting element overhead above the groove 602 to ensure that the light emitting intensity affects the structure of the adhesive layer 300 when the light emitting intensity of the light emitting element is suddenly changed. In the present embodiment, in fig. 12a, 12b, 14 or 15, the vertical distance between the adhesive layer 300 on the bottom wall of the groove 602 and the light emitting region of the corresponding light emitting element is 5 μm to 17 μm, and the thickness of the space layer 200 and the depth of the groove 602 can be adjusted according to the vertical distance between the adhesive layer 300 and the light emitting region of the corresponding light emitting element, which will not be described in detail herein.

Referring to fig. 12a to 15, a plurality of light emitting elements are disposed on the adhesive layer 300 at intervals, the rest of the light emitted by at least one light emitting element corresponds to one groove 602, and the edge of the light emitting element is attached to the adhesive layer 300 formed on the second surface 202 of the overhead layer 200, so that the light emitting area of the light emitting element is overhead on the groove 602. Alternatively, the plurality of light emitting elements may include at least three light emitting elements that emit light of colors different from each other, wherein one of the light emitting elements is a light emitting element that emits blue light. At this time, only one groove 602 may be formed on the buildup layer 200, and the light emitting region of the light emitting element that emits blue light corresponds to the groove 602. Alternatively, the plurality of light emitting elements includes three light emitting elements, each of which is a light emitting element that radiates blue light, and three grooves 602 are provided on the overhead layer 200, each groove 602 corresponding to one light emitting element. Alternatively, when the plurality of light emitting elements are a light emitting element that emits red light, a light emitting element that emits blue light, and a light emitting element that emits blue light, respectively, three grooves 602 may be provided on the overhead layer 200,

In a specific embodiment of the present embodiment, as shown in fig. 12a, three grooves 602 are disposed on the second surface 202 of the overhead layer 200, and the grooves 602 completely penetrate the overhead layer 200, such that the bottoms of the grooves 602 expose the transparent layer 100. The adhesive layer 300 is formed on the second surface 202 of the overhead layer 200 and the inner wall of the recess 602. Further, the light emitting device in the present embodiment includes three light emitting elements, that is, a first light emitting element 501, a second light emitting element 502, and a third light emitting element 503, respectively, the first light emitting element 501 is a red light emitting element, the second light emitting element 502 is a green light emitting element, the third light emitting element 503 is a blue light emitting element, and a light emitting area of each light emitting element is arranged overhead corresponding to one groove 602. The spacer layer 200 is formed as a photoresist layer to prevent optical crosstalk between adjacent light emitting elements.

In a specific embodiment of the present embodiment, as shown in fig. 13, the adhesive layer 300 is formed only on the second surface 202 of the overhead layer 200. Also, the groove 602 completely penetrates the overhead layer 200 such that the bottom of the groove 602 exposes the transparent layer 100.

In a specific embodiment of the present embodiment, as shown in fig. 14, the groove 602 penetrates through a portion of the overhead layer 200, and the depth of the groove 602 is smaller than the thickness of the overhead layer 200, and the overhead layer 200 is a light-transmitting layer, so that light can pass through the bottom wall of the groove 602 and penetrate through the overhead layer 200, and the light-transmitting layer is made of transparent polyimide.

In one embodiment of the present embodiment, as shown in fig. 15, a groove 602 is disposed on the second surface 202 of the overhead layer 200, and the groove 602 penetrates the overhead layer 200, so that the bottom of the groove 602 exposes the surface of the transparent layer 100. At this time, the overhead layer 200 is formed as a photoresist layer to prevent optical crosstalk between adjacent light emitting elements. The adhesive layer 300 is formed on the second surface 202 and the inner wall of the groove 602, and the light emitting device in this embodiment includes three light emitting elements, namely, a first light emitting element 501, a second light emitting element 502 and a third light emitting element 503, where the first light emitting element 501 is a red light emitting element, the second light emitting element 502 is a green light emitting element, the third light emitting element 503 is a blue light emitting element, and the light emitting area of the blue light emitting element is disposed corresponding to the groove 602 on the overhead layer 200.

Example 5

The same points as the light emitting device of fig. 1 and 2a or fig. 3 and 4 described in embodiment 1 are not described herein, and the difference is that:

Referring to fig. 16a-19, the light emitting device in the present embodiment is further provided with a plurality of angle adjusting layers 400 between the transparent layer 100 and the plurality of light emitting elements, the angle adjusting layers 400 being in one-to-one correspondence with the light emitting elements. The angle adjusting layer 400 can adjust the light emitting angle of each light emitting element, and enlarge the light emitting angle of each light emitting element, so as to avoid light dead zones between adjacent light emitting elements and influence the display effect. Alternatively, the angle adjustment layer 400 may be a DBR reflection layer capable of having a reflectance of 80% or more for light having an incident angle of 0 to 20 degrees, a reflectance of 45% to 60% for light having an incident angle of 20 to 35 degrees, and a reflectance of 40% or less for light having an incident angle of 35 to 90 degrees.

Specifically, referring to fig. 16a or 17, the number of light emitting elements is three, and when the three light emitting elements are a red light emitting element, a green light emitting element, and a blue light emitting element, respectively, the angle adjusting layer 400 corresponding to each light emitting element is different. At this time, the angle adjusting layer 400 includes a first angle adjusting layer 401, a second angle adjusting layer 402, and a third angle adjusting layer 403, wherein the first angle adjusting layer 401 corresponds to a red light emitting element, the second angle adjusting layer 402 corresponds to a green light emitting element, and the third angle adjusting layer 403 corresponds to a blue light emitting element. The first angle adjustment layer 401 can have a reflectance of 80% or more for light having a wavelength of 620nm to 760nm and an incident angle of 0 to 20 degrees, a reflectance of 45% to 60% for light having a wavelength of 620nm to 760nm and an incident angle of 20 to 35 degrees, and a reflectance of 40% or less for light having a wavelength of 620nm to 760nm and an incident angle of 35 to 90 degrees. The second angle adjustment layer 402 can have a reflectance of 80% or more for light having a wavelength range of 490nm to 577nm and an incident angle of 0 to 20 degrees, a reflectance of 45% to 60% for light having a wavelength range of 490nm to 577nm and an incident angle of 20 to 35 degrees, and a reflectance of 40% or less for light having a wavelength range of 490nm to 577nm and an incident angle of 35 to 90 degrees. The third angle adjustment layer 403 can have a reflectance of 80% or more for light having a wavelength of 420nm to 480nm and an incident angle of 0 to 20 degrees, a reflectance of 45% to 60% for light having a wavelength of 420nm to 480nm and an incident angle of 20 to 35 degrees, and a reflectance of 40% or less for light having a wavelength of 420nm to 480nm and an incident angle of 35 to 90 degrees. Referring to fig. 18, when the three light emitting elements are all blue light emitting elements, the angle adjusting layer 400 provided on each light emitting element has the same structure and reflectivity for each angle of light, that is, the angle adjusting layer 400 corresponding to each light emitting element is the same angle adjusting layer 400. The angle adjustment layer 400 can have a reflectance of 80% or more for light having a wavelength of 420nm to 480nm and an incident angle of 0 to 20 degrees, a reflectance of 45% to 60% for light having a wavelength of 420nm to 480nm and an incident angle of 20 to 35 degrees, and a reflectance of 40% or less for light having a wavelength of 420nm to 480nm and an incident angle of 35 to 90 degrees.

Referring to fig. 20, the light emitting angle in embodiment 1 is only between-65 ° and +60°, and the light emitting angle range of each light emitting element can be up to between-80 ° and +80° by the arrangement of the angle adjusting layer 400 in this embodiment, as shown in fig. 21.

Alternatively, each of the angle adjustment layers 400 is a DBR reflection layer formed of materials having different refractive indexes alternately stacked. The DBR reflection layer is made of at least two different materials in SiO ₂、TiO₂、ZnO₂、ZrO₂、Cu₂O₃. In this embodiment, the DBR reflective layer may be in a TiO ₂ layer/SiO ₂ layer configuration alternately laminated. Each layer may have an optical thickness of 1/4 of a specific wavelength and may be formed in 4 to 20 pairs (pairs). The specific DBR reflective layer structure can be designed to reflect the desired angular range or wavelength range, and will not be described in detail herein.

In a specific embodiment of the present embodiment, referring to fig. 16a, the three light emitting elements of the light emitting device are a red light emitting element, a green light emitting element, and a blue light emitting element, respectively, and the angle adjustment layer 400 includes a first angle adjustment layer 401, a second angle adjustment layer 402, and a third angle adjustment layer 403. The adhesive layer 300 is provided with a plurality of openings 301, and each opening 301 is embedded with an angle adjusting layer 400.

In a specific embodiment of the present embodiment, referring to fig. 17, the three light emitting elements of the light emitting device are a red light emitting element, a green light emitting element, and a blue light emitting element, respectively, and the angle adjustment layer 400 includes a first angle adjustment layer 401, a second angle adjustment layer 402, and a third angle adjustment layer 403, and each angle adjustment layer 400 is disposed on the surface of the adhesive layer 300 close to the plurality of light emitting elements.

In a specific embodiment of the present embodiment, referring to fig. 18, three light emitting elements of the light emitting device are blue light emitting elements, and then the angle adjusting layers 400 corresponding to each light emitting element are the same, and each angle adjusting layer 400 is disposed on the surface of the adhesive layer 300 close to the plurality of light emitting elements.

In a specific embodiment of the present embodiment, referring to fig. 19, three light emitting elements in the light emitting device are a red light emitting element, a green light emitting element, and a blue light emitting element, respectively, the angle adjustment layer 400 includes a first angle adjustment layer 401, a second angle adjustment layer 402, and a third angle adjustment layer 403, each angle adjustment layer 400 is disposed on the transparent layer 100, and the adhesive layer 300 covers the angle adjustment layer 400 and the transparent layer 100 between adjacent angle adjustment layers 400. Three light emitting elements are formed on the adhesive layer 300 and are in one-to-one correspondence with the first angle adjustment layer 401, the second angle adjustment layer 402, and the third angle adjustment layer 403. Optionally, the area of each angle-adjusting layer is larger than the area of each light-emitting element, so as to facilitate angle adjustment of the lateral light-emitting of the light-emitting element.

It should be noted that any two or more of the above embodiments 1 to 5 may be combined, for example, any one of the insulating layer structures described in embodiment 1 is applied to embodiment 2, or the filling structure in embodiment 2 is applied to embodiment 3, 4 or 5, or embodiments 2 to 5 are simultaneously applied to embodiment 1, etc., and other combinations will not be listed here.

Example 6

The present embodiment provides a display device, referring to fig. 22, which includes a display substrate 005 and at least one light emitting device 006 formed on the display substrate 005. The light emitting device may be configured to electrically connect the wiring layer to the display substrate 005 by fixing the wiring layer to the display substrate 005 by means of solder paste or the like, or may be configured to electrically connect the protection electrode to the display substrate 005 by fixing the protection electrode to the display substrate 005 by means of solder paste or the like. The light-emitting device according to any one of embodiments 1 to 5, or any combination of the embodiments. The light-emitting device has the same technical effects as the above.

The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims

1. A light emitting device, comprising:

A transparent layer;

2. The light-emitting device according to claim 1, further comprising:

3. The light-emitting device according to claim 1, further comprising:

the adhesive layer is arranged between the transparent layer and the plurality of light-emitting elements, a plurality of openings are formed in the adhesive layer, and each opening is embedded with one angle adjusting layer.

4. The light-emitting device according to claim 1, further comprising:

5. The light-emitting device according to claim 4, wherein an area of each of the angle-adjusting layers is larger than an area of each of the light-emitting elements.

6. The light-emitting device according to claim 2, 3 or 4, wherein the angle adjustment layer has a reflectance of 80% or more for light having an angle of incidence of 0 to 20 degrees, a reflectance of 45% to 60% for light having an angle of incidence of 20 to 35 degrees, and a reflectance of 40% or less for light having an angle of incidence of 35 to 90 degrees.

7. The light-emitting device according to claim 1, wherein the plurality of light-emitting elements includes three light-emitting elements that emit light of different colors from each other, respectively a red light-emitting element, a green light-emitting element, and a blue light-emitting element.

8. The light-emitting device according to claim 7, wherein the angle-adjusting layer comprises:

The first angle adjusting layer corresponds to the red light emitting element, and can have a reflectivity of more than 80% for light with a wavelength range of 620nm to 760nm and an incident angle of 0 to 20 degrees, a reflectivity of 45 to 60% for light with a wavelength range of 620nm to 760nm and an incident angle of 20 to 35 degrees, and a reflectivity of less than 40% for light with a wavelength range of 620nm to 760nm and an incident angle of 35 to 90 degrees;

A second angle adjustment layer corresponding to the green light emitting element, the second angle adjustment layer being capable of having a reflectance of 80% or more for light having a wavelength range of 490nm to 577nm and an incident angle of 0 to 20 degrees, having a reflectance of 45% to 60% for light having a wavelength range of 490nm to 577nm and an incident angle of 20 to 35 degrees, and having a reflectance of 40% or less for light having a wavelength range of 490nm to 577nm and an incident angle of 35 to 90 degrees;

9. The light-emitting device according to claim 1, wherein the plurality of light-emitting elements includes three light-emitting elements, each of the light-emitting elements is a blue light-emitting element, and the angle-adjusting layers corresponding to the light-emitting elements are the same angle-adjusting layer.

10. The light-emitting device according to claim 9, wherein each of the angle-adjusting layers has a reflectance of 80% or more for light having a wavelength of 420nm to 480nm and an incident angle of 0 to 20 degrees, a reflectance of 45% to 60% for light having a wavelength of 420nm to 480nm and an incident angle of 20 to 35 degrees, and a reflectance of 40% or less for light having a wavelength of 420nm to 480nm and an incident angle of 35 to 90 degrees.

11. A lighting device as recited in claim 8 or claim 10, wherein each of said light emitting elements has a light exit angle in a range of from-80 ° to +80°.

12. The light-emitting device according to claim 1, wherein the angle adjustment layer is a DBR reflection layer formed by alternately laminating materials of different refractive indexes.

13. The light-emitting device according to claim 12, wherein the material of the DBR reflection layer is at least two of different materials in SiO ₂、TiO₂、ZnO₂、ZrO₂、Cu₂O₃.

14. The light-emitting device according to claim 12, wherein the DBR reflection layer is a stacked structure composed of a SiO ₂ layer and a TiO ₂ layer.

15. The light-emitting device according to claim 1, further comprising:

And a filling layer filled between the adjacent light emitting elements.

16. The light-emitting device according to claim 15, wherein the wiring layer comprises:

and one side of the second layer is electrically connected with the first layer.

17. The light-emitting device according to claim 1, further comprising a plurality of guard electrodes formed on the wiring layer at intervals and electrically connected to the wiring layer.

18. The light-emitting device according to claim 1, further comprising:

and an insulating layer formed at least on a part of the wiring layer.

19. The light-emitting device according to claim 18, further comprising:

And a protective electrode formed on the wiring layer uncovered by the insulating layer.

20. A display device, comprising:

A display substrate;

At least one light emitting device, disposed on a surface of the display substrate, wherein the light emitting device is electrically connected to the display substrate, and the light emitting device is any one of claims 1 to 19.