CN119535662A - Thin film narrow bandpass filter, preparation method and application - Google Patents
Thin film narrow bandpass filter, preparation method and application Download PDFInfo
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- CN119535662A CN119535662A CN202411575457.5A CN202411575457A CN119535662A CN 119535662 A CN119535662 A CN 119535662A CN 202411575457 A CN202411575457 A CN 202411575457A CN 119535662 A CN119535662 A CN 119535662A
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- 239000010409 thin film Substances 0.000 title claims abstract description 62
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 238000000701 chemical imaging Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims abstract description 10
- 230000005540 biological transmission Effects 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 155
- 238000000151 deposition Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 8
- 239000011241 protective layer Substances 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 230000003595 spectral effect Effects 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000000233 ultraviolet lithography Methods 0.000 claims 1
- 238000001228 spectrum Methods 0.000 abstract description 4
- 239000012790 adhesive layer Substances 0.000 description 10
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 4
- 238000013461 design Methods 0.000 description 4
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2823—Imaging spectrometer
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
- G02B5/288—Interference filters comprising deposited thin solid films comprising at least one thin film resonant cavity, e.g. in bandpass filters
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J2003/1213—Filters in general, e.g. dichroic, band
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2823—Imaging spectrometer
- G01J2003/2826—Multispectral imaging, e.g. filter imaging
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
Abstract
The invention discloses a thin film narrow band-pass filter, a preparation method and application thereof. The filter is based on the Fabry-Perot cavity theory, and comprises a substrate layer, a first adhesion layer, a bottom metal reflector layer, a second adhesion layer, a medium layer, a third adhesion layer, a top metal reflector layer, a fourth adhesion layer and a protection layer from bottom to top in sequence, wherein the refractive indexes of the top metal reflector layer and the bottom metal reflector layer are higher than those of the medium layer. The filter provided by the invention realizes excellent spectrum selectivity through a precisely designed multilayer film structure based on the Fabry-Perot cavity theory, is particularly suitable for a multispectral imaging system, and can realize narrow-band transmission of a required wavelength range while maintaining high transmissivity by optimizing the selection and layer thickness of film materials, thereby meeting the requirements of the multispectral imaging system. The thin film narrow bandpass filter has simple structure, is easy to manufacture, and can realize mass production.
Description
Technical Field
The invention relates to the technical field of optical filters, in particular to a thin film narrow bandpass filter based on a Fabry-Perot cavity theory and a preparation method thereof.
Background
In the field of multispectral imaging technology, narrow-band filters are one of the key components to achieve image capture. They are capable of allowing light of a specific wavelength range to pass through while reflecting or absorbing light of other wavelengths, thereby enabling selective transmission of specific spectral regions. Conventional narrow band filters typically employ complex optical systems, such as diffraction gratings, prisms, etc., which are not only bulky, but also costly. With the development of micro-nano processing technology, the thin film filter realizes spectrum selection by depositing multiple layers of thin films on a substrate, and the thin films can be metal, medium or a combination thereof. The thin film filter has the advantages of small volume, light weight, low cost, flexible design and the like, so that the thin film filter has wide application potential in a multispectral imaging system. Therefore, the development of the narrow-band-pass filter with simple structure, low cost and excellent performance has important practical significance.
Disclosure of Invention
The invention aims at overcoming the defects of the prior art and provides a thin film narrow-band pass filter, a preparation method and application. The filter provided by the invention realizes excellent spectrum selectivity through a precisely designed multilayer film structure based on the Fabry-Perot cavity theory, is particularly suitable for a multispectral imaging system, and can realize narrow-band transmission of a required wavelength range while maintaining high transmissivity by optimizing the selection and layer thickness of film materials, thereby meeting the requirements of the multispectral imaging system.
The thin film narrow band-pass filter is realized by the following technical scheme that the filter is based on the Fabry-Perot cavity theory, and sequentially comprises a substrate layer, a first adhesion layer, a bottom metal reflector layer, a second adhesion layer, a dielectric layer, a third adhesion layer, a top metal reflector layer, a fourth adhesion layer and a protection layer from bottom to top, wherein the refractive indexes of the top metal reflector layer and the bottom metal reflector layer are higher than those of the dielectric layer, the dielectric layer is used for forming a narrow band transmission peak, and the top metal reflector layer and the bottom metal reflector layer are used together to form a Fabry-Perot resonant cavity, so that light with specific wavelength is resonantly enhanced in the resonant cavity and transmitted.
Further, the peak wavelength λ of the filter is represented by λ=2n 1d1/m, where n 1 is the refractive index of the dielectric layer, d 1 is the thickness of the dielectric layer, and m is the diffraction order. By precisely controlling the thickness and refractive index of the dielectric layer, the peak wavelength of the filter can be precisely tuned to meet the needs of a particular application.
Further, the refractive index n 2 of the bottom metal mirror layer is equal to the refractive index n 3 of the top metal mirror layer, the thickness d 2 of the bottom metal mirror layer is equal to the thickness d 3 of the top metal mirror layer, and d 2＝n1d1/n2.
Furthermore, the top metal reflector layer and the bottom metal reflector layer are made of gold materials, have high reflectivity and good conductivity, can effectively support resonance wavelength smaller than 500nm, and meanwhile, the thickness of the gold layers is adjusted according to specific design requirements so as to optimize the overall filtering transmissivity.
Further, the dielectric layer is used as a dielectric cavity of the filter, the material of the dielectric layer is SiO 2, and the material has good optical characteristics and chemical stability, and can realize high refractive index and narrow bandpass characteristics.
Further, by depositing an adhesive layer to improve adhesion, mechanical stability and durability of the filter are facilitated to be improved. The material of the adhesion layer is TiO 2. The thickness of the four layers of adhesive layers is the same and is between 9nm and 11 nm.
Further, the material of the protective layer and the basal layer is SiO 2.
The invention also provides a preparation method of the thin film narrow band-pass filter, which comprises the steps of preparing a substrate layer, and sequentially depositing a first adhesion layer, a bottom metal reflector layer, a second adhesion layer, a dielectric layer, a third adhesion layer, a top metal reflector layer, a fourth adhesion layer and a protective layer on the substrate layer.
Further, each thin film layer is deposited during the preparation process by using an electron beam evaporator, wherein the deposition rate of the dielectric layer and the adhesive layer is as followsDeposition rate of metal mirror layer is controlled fromGradually increase toThis method can ensure uniformity and stability of the film, thereby improving the performance of the filter.
The invention also provides an application method of the thin film narrow-band pass filter, which is integrated into a multispectral imaging system, wherein the multispectral imaging system comprises P thin film narrow-band pass filters, a black-and-white image sensor and a black-and-white image sensor, wherein the peak wavelengths of the corresponding thin film narrow-band pass filters are lambda 1,…,λP respectively, and all the thin film narrow-band pass filters are matched with the black-and-white image sensor to capture image data of P spectral channels simultaneously. This integration provides a simple, compact and cost-effective multispectral imaging solution.
Further, the P thin film narrow band pass filters are formed into an integrated filter array through an ultraviolet photoetching machine, a mask plate and a film plating device, pixel level calibration is carried out on the P thin film narrow band pass filters and a black-and-white image sensor through a back-off welding machine, each thin film narrow band pass filter is used as a pixel, and the integrated filter array is formed into a multispectral imaging system through spin coating and bonding of optical transparent glue.
Further, the optically transparent glue is prepared by mixing PMMA powder and anisole.
The preparation method of the integrated filter array comprises the steps of preparing a substrate layer, periodically arranging P square first adhesive layers on the substrate layer through an ultraviolet photoetching machine and a mask, and sequentially depositing a bottom metal reflector layer, a second adhesive layer, a dielectric layer, a third adhesive layer, a top metal reflector layer, a fourth adhesive layer and a protective layer on each first adhesive layer to form P thin-film narrow-band-pass filters.
Compared with the prior art, the invention has the following beneficial technical effects:
1. the thin film narrow band-pass filter has simple structure, is easy to manufacture, and can realize large-scale production;
2. the thin film narrow band pass filter has high spectrum selectivity and is suitable for a multispectral imaging system;
3. The thin film narrow band pass filter has low cost and can replace the traditional complex optical system.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic cross-sectional structure of a thin film narrow band-pass filter according to an embodiment of the present invention;
FIG. 2 shows the transmittance of different wavelengths of a thin film narrow band-pass filter according to an embodiment of the present invention;
Fig. 3 is a schematic diagram of an integrated filter array when p=6 according to an embodiment of the present invention.
Detailed Description
For a better understanding of the technical solution of the present application, the following detailed description of the embodiments of the present application refers to the accompanying drawings.
It should be understood that the described embodiments are merely some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The terminology used in the embodiments of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this application and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
As shown in FIG. 1, the embodiment of the invention provides a thin film narrow bandpass filter, which is based on the design of a multi-layer structure of a Fabry-Perot cavity theory, and comprises a substrate layer, a first adhesion layer, a bottom metal reflector layer, a second adhesion layer, a dielectric layer, a third adhesion layer, a top metal reflector layer, a fourth adhesion layer and a protection layer which are parallel from bottom to top in sequence, wherein the refractive indexes of the top metal reflector layer and the bottom metal reflector layer are higher than those of the dielectric layer. The dielectric layer is made of a dielectric material with high refractive index and is used for realizing that light with specific wavelength is reflected in the dielectric layer for multiple times and is interfered, so that a narrow-band transmission peak is formed. The top metal mirror layer and the bottom metal mirror layer cooperate to form a fabry-perot resonator such that light of a particular wavelength resonates and is transmitted out within the resonator.
Further, the peak wavelength λ of the filter is determined by the formula λ=2n 1d1/m, where n 1 is the refractive index of the dielectric layer, d 1 is the thickness of the dielectric layer, and m is the diffraction order, in this embodiment taking m=1. By precisely controlling the thickness and refractive index of the dielectric layer, the peak wavelength of the filter can be precisely tuned to meet the needs of a particular application.
Further, the refractive index n 2 of the bottom metal mirror layer is equal to the refractive index n 3 of the top metal mirror layer. The thickness d 2 of the bottom metal mirror layer is equal to the thickness d 3 of the top metal mirror layer, and d 2＝n1d1/n2.
Further, the two metal reflector layers are made of gold materials, have high reflectivity and good conductivity, and can effectively support resonance wavelengths smaller than 500 nm. Meanwhile, the thickness of the gold layer is adjusted according to specific design requirements so as to optimize the overall filtering transmissivity.
Further, the dielectric layer is used as a dielectric cavity of the filter, and the material is SiO 2, so that the material has good optical property and chemical stability, and can realize high refractive index and narrow bandpass property.
Further, by depositing four adhesion layers to improve adhesion, it helps to improve the mechanical stability and durability of the filter. The thickness of the four adhesive layers is the same and is between 9nm and 11 nm. The material of the adhesion layer in this example was TiO 2, and the thickness of each layer was 10nm.
Further, the material of the protective layer is the same as the base layer. In this embodiment, both the protective layer and the base layer are SiO 2.
The preparation method of the thin film narrow bandpass filter in the embodiment specifically comprises the steps of preparing a substrate layer, and then sequentially depositing a first adhesion layer, a bottom metal reflector layer, a second adhesion layer, a dielectric layer, a third adhesion layer, a top metal reflector layer, a fourth adhesion layer and a protection layer on the substrate layer.
Preferably, each thin film layer is deposited during the preparation process using an electron beam evaporator, wherein the deposition rate of the dielectric layer and the adhesion layer isThe deposition rate of the metal mirror layer is controlled fromGradually increase toThis method can ensure uniformity and stability of the film, thereby improving the performance of the filter.
As shown in fig. 2, overall (normalized) transmittance curves for a single thin film narrow bandpass filter are shown, which demonstrate the light transmittance performance of the filter at different wavelengths. The unwanted peaks in the visible region were successfully filtered out by using a thin film narrow band pass filter.
In another embodiment, a method of applying the thin film narrow band pass filter described above is provided, the thin film narrow band pass filter being integrated into a multispectral imaging system. The multispectral imaging system comprises P thin film narrow band-pass filters, a black-and-white image sensor and a black-and-white image sensor, wherein the corresponding peak wavelengths of the P thin film narrow band-pass filters are lambda 1,…,λP respectively, and all the thin film narrow band-pass filters are matched with the black-and-white image sensor to capture image data of P spectral channels simultaneously. This integration provides a simple, compact and cost-effective multispectral imaging solution.
And forming an integrated filter array by the P thin film narrow band pass filters through an ultraviolet photoetching machine, a mask plate and a film plating device, performing pixel level calibration on the P thin film narrow band pass filters and a black-and-white image sensor through a back-off welding machine, taking each thin film narrow band pass filter as a pixel, and combining optical transparent glue to spin-coat and bond the thin film narrow band pass filters into a multispectral imaging system. Preferably, the optically transparent glue is prepared by mixing PMMA powder and anisole.
The preparation method of the integrated filter array specifically comprises the following steps:
(1) Preparing a substrate layer;
(2) P square first adhesive layers are periodically arranged on the basal layer through an ultraviolet photoetching machine and a mask;
(3) And sequentially depositing a bottom metal reflector layer, a second adhesion layer, a dielectric layer, a third adhesion layer, a top metal reflector layer, a fourth adhesion layer and a protective layer on each first adhesion layer to form the P thin film narrow band-pass filters.
Preferably, each thin film layer is deposited by an electron beam evaporator, wherein the deposition rate of the dielectric layer and the adhesion layer isThe deposition rate of the metal mirror layer is controlled fromGradually increase toThis method can ensure uniformity and stability of the film, thereby improving the performance of the filter.
As shown in fig. 3, a schematic diagram of the integrated filter array structure when p=6 is shown.
By the manufacturing method, the thin film narrow bandpass filter with excellent spectral selectivity can be manufactured efficiently and accurately, and the requirements of a multispectral imaging system are met.
The foregoing is merely a preferred embodiment of the present invention, and the present invention has been disclosed in the above description of the preferred embodiment, but is not limited thereto. Any person skilled in the art can make many possible variations and modifications to the technical solution of the present invention or modifications to equivalent embodiments using the methods and technical contents disclosed above, without departing from the scope of the technical solution of the present invention. Therefore, any simple modification, equivalent variation and modification of the above embodiments according to the technical substance of the present invention fall within the scope of the technical solution of the present invention.
Claims (10)
1. A thin film narrow band-pass filter is characterized in that the filter is based on a Fabry-Perot cavity theory, and sequentially comprises a substrate layer, a first adhesion layer, a bottom metal reflector layer, a second adhesion layer, a dielectric layer, a third adhesion layer, a top metal reflector layer, a fourth adhesion layer and a protection layer from bottom to top, wherein the refractive indexes of the top metal reflector layer and the bottom metal reflector layer are higher than those of the dielectric layer, the dielectric layer is used for forming a narrow band transmission peak, and the top metal reflector layer and the bottom metal reflector layer are combined to form a Fabry-Perot resonant cavity, so that light with specific wavelength is enhanced in resonance in the resonant cavity and transmitted.
2. The thin film narrow bandpass filter according to claim 1, wherein the peak wavelength λ of the filter is represented by λ=2n 1d1/m, where n 1 is the refractive index of the dielectric layer, d 1 is the thickness of the dielectric layer, and m is the diffraction order.
3. The thin film narrow bandpass filter of claim 2 wherein the bottom metal mirror layer has a refractive index n 2 equal to the refractive index n 3 of the top metal mirror layer, and wherein the bottom metal mirror layer has a thickness d 2 equal to the thickness d 3 of the top metal mirror layer and d 2＝n1d1/n2.
4. The thin film narrow bandpass filter according to claim 1, wherein the top metal mirror layer and the bottom metal mirror layer are made of gold material, and the dielectric layer is a dielectric cavity of the filter, and the material is SiO 2.
5. The thin film narrow bandpass filter according to claim 1, wherein the four adhesion layers are made of TiO 2 and have the same thickness, and the thickness is between 9nm and 11 nm.
6. A method for producing a thin film narrow band-pass filter according to any one of claims 1 to 5, characterized in that a substrate layer is produced, on which a first adhesion layer, a bottom metal mirror layer, a second adhesion layer, a dielectric layer, a third adhesion layer, a top metal mirror layer, a fourth adhesion layer and a protective layer are deposited in this order.
7. The method of claim 6, wherein each thin film layer is deposited using an electron beam evaporator, wherein the deposition rate of the dielectric layer and the adhesion layer isDeposition rate of metal mirror layer is controlled fromGradually increase to
8. A method for applying a thin film narrow bandpass filter according to any one of claims 1-5 wherein the thin film narrow bandpass filter is integrated into a multispectral imaging system, wherein the multispectral imaging system comprises P thin film narrow bandpass filters with peak wavelengths of lambda 1,…,λP, and a black-and-white image sensor, wherein all thin film narrow bandpass filters are used in combination with the black-and-white image sensor to capture image data of P spectral channels simultaneously.
9. The method for applying thin film narrow band pass filters according to claim 8, wherein P thin film narrow band pass filters are formed into an integrated filter array by an ultraviolet lithography machine, a mask plate and a film plating device, pixel level calibration is performed on the P thin film narrow band pass filters and a black-and-white image sensor by a back-off welder, each thin film narrow band pass filter is used as a pixel, and the thin film narrow band pass filters are spin-coated and bonded together with optical transparent glue to form a multispectral imaging system.
10. The application method of the thin film narrow band-pass filter according to claim 9, wherein the preparation method of the integrated filter array comprises the steps of preparing a substrate layer, periodically arranging P square first adhesion layers on the substrate layer through an ultraviolet photoetching machine and a mask, and sequentially depositing a bottom metal reflector layer, a second adhesion layer, a dielectric layer, a third adhesion layer, a top metal reflector layer, a fourth adhesion layer and a protection layer on each first adhesion layer to form the P thin film narrow band-pass filter.
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| CN202411575457.5A CN119535662A (en) | 2024-11-06 | 2024-11-06 | Thin film narrow bandpass filter, preparation method and application |
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| CN202411575457.5A CN119535662A (en) | 2024-11-06 | 2024-11-06 | Thin film narrow bandpass filter, preparation method and application |
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