CN119511652A - A positive photoresist stripping method and stripping system - Google Patents
A positive photoresist stripping method and stripping system Download PDFInfo
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- CN119511652A CN119511652A CN202411800493.7A CN202411800493A CN119511652A CN 119511652 A CN119511652 A CN 119511652A CN 202411800493 A CN202411800493 A CN 202411800493A CN 119511652 A CN119511652 A CN 119511652A
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Abstract
The invention provides a positive photoresist stripping method and a positive photoresist stripping system, and relates to the technical field of chip manufacturing. The positive photoresist stripping method comprises the steps of manufacturing a photoresist layer on the upper surface of a wafer by utilizing positive photoresist, immersing the wafer in developing solution to enable a photosensitive agent in the photoresist layer to undergo a crosslinking reaction with the developing solution, converting the positive photoresist close to the upper surface of the photoresist layer in the photoresist layer into a hardened photoresist film, enabling the development rate of the hardened photoresist film to be smaller than that of the positive photoresist, enabling the photoresist layer to form a special-shaped structure through exposing and developing the wafer, enabling the cross section width of the special-shaped structure to be gradually reduced from top to bottom, and attaching a metal material on the upper surface of the wafer and stripping the photoresist layer through the photoresist layer to enable the upper surface of the wafer to obtain a patterned metal layer. The positive photoresist stripping method solves the problem that the quality of the metal layer is reduced due to adhesion of the adhesive layer manufactured by adopting positive photoresist and metal, is beneficial to preventing metal from falling off and reducing the roughness of the side wall of the metal, and achieves the effect of improving the quality of the metal layer.
Description
Technical Field
The invention relates to the technical field of chip manufacturing, in particular to a positive photoresist stripping method and a positive photoresist stripping system.
Background
The process of stripping process generally comprises obtaining patterned photoresist on a substrate by photolithography, plating metal material on the photoresist, and stripping the photoresist by photoresist stripping (also called stripping solution) to obtain a metal layer consistent with the pattern, wherein the photoresist is generally divided into positive photoresist and negative photoresist, the negative photoresist has good adhesion capability and barrier effect and high photosensitive speed, but can deform and expand during development to limit the resolution of the negative photoresist, therefore, when the manufacturing requirement of nanometer precision is met, positive photoresist is generally adopted as photoresist, however, after the positive photoresist is used for manufacturing a photoresist layer and plating the metal material, the metal is adhered to the bottom of the photoresist layer, so that the metal is stripped or the metal side wall is rough when the photoresist layer is stripped, thereby causing the problem of metal layer quality degradation.
In view of the above problems, no effective technical solution is currently available.
Disclosure of Invention
The invention aims to provide a positive photoresist stripping method and a positive photoresist stripping system, which solve the problem of the quality reduction of a metal layer caused by adhesion of a glue layer manufactured by positive photoresist and metal, are beneficial to preventing metal from falling off and reducing the roughness of a metal side wall, and achieve the effect of improving the quality of the metal layer.
In a first aspect, the present invention provides a positive photoresist stripping method, including the steps of:
S1, manufacturing a glue layer on the upper surface of a wafer by using positive glue;
S2, soaking the wafer in a developing solution to enable a photosensitive agent in the adhesive layer to undergo a crosslinking reaction with the developing solution, and converting positive adhesive close to the upper surface of the adhesive layer in the adhesive layer into a hardened adhesive film, wherein the developing rate of the hardened adhesive film is smaller than that of the positive adhesive;
S3, exposing and developing the wafer to enable the adhesive layer to form a special-shaped structure, wherein the cross section width of the special-shaped structure is gradually reduced from top to bottom;
s4, attaching a metal material on the upper surface of the wafer, and stripping the adhesive layer to obtain a patterned metal layer on the upper surface of the wafer.
According to the positive photoresist stripping method provided by the invention, the hardened adhesive film with the development speed smaller than that of the positive photoresist is manufactured, so that the adhesive layer is ensured to form a special-shaped structure after exposure and development, and the special-shaped structure enables the metal plated on the wafer to keep a distance from the bottom layer of the adhesive layer, so that adhesion between the metal and the bottom of the adhesive layer is avoided, further, the metal is prevented from falling off, the roughness of the side wall of the metal is reduced, and the effect of improving the quality of the metal layer is achieved.
Further, the specific steps in step S1 include:
S11, after the positive photoresist is coated on the upper surface of the wafer, the wafer is baked to obtain the photoresist layer.
The formation of a stable glue layer facilitates accurate manufacture of the special-shaped structure.
Further, the developing solution is TMAH developing solution, and the photosensitizer is PAC photosensitizer.
Further, the steps between the step S3 and the step S4 further include:
S5, bombarding the special-shaped structures through plasma gas to remove residues between two adjacent special-shaped structures.
Further preventing the problems of metal layer detachment or metal sidewall roughness.
Further, the plasma gas is an oxygen plasma gas.
Can effectively remove organic pollutants and can be used as a recycled cleaning medium.
Further, the specific steps in step S4 include:
s41, attaching a metal material on the upper surface of the wafer in a sputtering or vapor plating mode.
In a second aspect, the present invention provides a peeling system comprising:
the glue layer manufacturing equipment is used for manufacturing a glue layer on the upper surface of the wafer by using positive glue;
The soaking device is used for soaking the wafer in a developing solution so as to enable the photosensitive agent in the adhesive layer to perform a crosslinking reaction with the developing solution and convert positive adhesive close to the upper surface of the adhesive layer into a hardened adhesive film, wherein the developing rate of the hardened adhesive film is smaller than that of the positive adhesive;
the exposure developing device is used for exposing and developing the wafer so as to enable the adhesive layer to form a special-shaped structure, wherein the cross section width of the special-shaped structure is gradually reduced from top to bottom;
And the metal layer manufacturing equipment is used for attaching a metal material on the upper surface of the wafer and removing the adhesive layer to obtain a patterned metal layer on the upper surface of the wafer.
Further, the glue layer manufacturing equipment comprises a glue coating device and a baking device, wherein the glue coating device is used for coating the positive glue on the upper surface of the wafer, and the baking device is used for baking the wafer after the positive glue is coated on the upper surface of the wafer to obtain the glue layer.
Further, the device also comprises a cleaning device for removing residues between two adjacent special-shaped structures by bombarding the special-shaped structures through plasma gas.
Further, the metal layer manufacturing equipment comprises a sputtering device and/or an evaporation device, wherein the sputtering device is used for attaching a metal material to the upper surface of the wafer in a sputtering mode, and the evaporation device is used for attaching the metal material to the upper surface of the wafer in an evaporation mode.
Therefore, the positive photoresist stripping method provided by the invention utilizes the cross-linking reaction of the developing solution and the photosensitive agent in the photoresist layer to convert the positive photoresist on the surface of the photoresist layer into the hardened photoresist film, and the development speed of the hardened photoresist film is smaller than that of the positive photoresist, so that the photoresist layer can form a special-shaped structure with a specific shape in the exposure development process, the special-shaped structure is wide in upper part and narrow in lower part, and a certain distance is kept between the metal material and the bottom of the photoresist layer after the metal material is plated on a wafer, so that the metal material is not adhered to the bottom of the photoresist layer, thereby avoiding the problems of metal falling off or metal side wall roughness and the like when the photoresist layer is stripped, and achieving the effect of improving the quality of the metal layer.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the embodiments of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and drawings.
Drawings
Fig. 1 is a flowchart of a positive photoresist stripping method according to an embodiment of the present invention.
Fig. 2 is a partial preparation process of preparing a patterned metal layer according to the positive photoresist stripping method provided in the embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a stripping system according to an embodiment of the present invention.
Description of the reference numerals:
100. The wafer, 200 parts of glue layer, 300 parts of hardened glue film, 310 parts of special-shaped structure, 400 parts of metal layer, 500 parts of glue layer manufacturing equipment, 510 parts of glue spreading device, 520 parts of baking device, 600 parts of soaking device, 700 parts of exposure developing device, 800 parts of metal layer manufacturing equipment, 810 parts of sputtering device, 820 parts of evaporation device, 900 parts of cleaning device.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present invention.
It should be noted that like reference numerals and letters refer to like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. Meanwhile, in the description of the present invention, the terms "first", "second", and the like are used only to distinguish the description, and are not to be construed as indicating or implying relative importance.
Referring to fig. 1 and 2, the invention provides a positive photoresist stripping method, which comprises the following steps:
S1, manufacturing a glue layer on the upper surface of a wafer by using positive glue;
S2, soaking the wafer in a developing solution to enable a photosensitive agent in the adhesive layer to undergo a crosslinking reaction with the developing solution, and converting positive photoresist close to the upper surface of the adhesive layer in the adhesive layer into a hardened adhesive film, wherein the development rate of the hardened adhesive film is smaller than that of the positive photoresist;
S3, exposing and developing the wafer to enable the adhesive layer to form a special-shaped structure, wherein the width of the cross section of the special-shaped structure is gradually reduced from top to bottom;
S4, attaching a metal material on the upper surface of the wafer and removing the adhesive layer to obtain a patterned metal layer on the upper surface of the wafer.
In this embodiment, in practical application, the solvent in the adhesive layer 200 volatilizes and generates intermolecular vacancies, and the developing solution gradually penetrates into the adhesive layer 200 from top to bottom and fills the intermolecular vacancies, so as to perform a crosslinking reaction with the photosensitive agent, thereby finally obtaining the macromolecule forming the hardened adhesive film 300. It should be noted that, in practice, the hardened film 300 is not a layer structure with distinct boundaries, generally, the difficulty of the developer penetrating down into the adhesive layer 200 increases with increasing depth, on one hand, most of the developer is already combined with the photosensitive agent to form macromolecules at a position close to the top surface of the adhesive layer 200, so that the developer penetrating down is less, on the other hand, the solvent evaporating down is less closer to the bottom surface of the adhesive layer 200, so that intermolecular vacancies are generated, and the developer cannot penetrate further into the adhesive layer 200, so that the hardened film 300 is observed from a microscopic view, and the macromolecule density is gradually reduced from top to bottom, and since the developing speed of the hardened film 300 is lower than that of the positive resist, the dissolving speed of the adhesive layer 200 increases with increasing depth when performing exposure development, so that the special-shaped structure 310 with a cross-sectional width gradually reduced from top to bottom is formed.
Under such a special-shaped structure 310, the width of the gap between two adjacent special-shaped structures 310 is gradually increased from top to bottom, when the metal material is attached to the upper surface of the wafer 100, the metal material enters the gap from the narrow end and falls on the wide end, and at this time, the metal layer 400 located on the wide end and the special-shaped structures 310 on both sides still keep a certain distance, so that the metal layer 400 cannot adhere to the adhesive layer 200, and when the adhesive layer 200 is peeled off, the adhesive layer 200 cannot pull the metal layer 400 to cause the metal layer 400 to accidentally fall off or cause the metal side wall to be rough, thereby realizing the improvement of the quality of the metal layer.
In certain embodiments, the specific steps in step S1 comprise:
s11, after positive photoresist is coated on the upper surface of the wafer, the wafer is baked to obtain a photoresist layer.
The present embodiment fixes the positive photoresist by baking and forms a stable photoresist layer 200 to facilitate the subsequent formation of the desired shaped structures 310 at the exact locations on the photoresist layer 200.
In some embodiments, the developer is TMAH developer and the sensitizer is PAC sensitizer.
In certain embodiments, between step S3 and step S4 further comprises the steps of:
s5, removing residues between two adjacent special-shaped structures through plasma gas bombardment of the special-shaped structures.
The removal of the residues by the plasma gas in this embodiment can ensure that the metal layer 400 is not indirectly adhered to the glue layer 200 by the residues, thereby further preventing the problems of detachment of the metal layer 400 or roughness of the metal sidewall.
In some embodiments, the plasma gas is an oxygen plasma gas, which can effectively remove organic pollutants and can be used as a recycled cleaning medium, so that the emission of cleaning waste liquid is reduced, and the environment is protected .
In certain embodiments, the specific steps in step S4 include:
S41, attaching a metal material on the upper surface of the wafer in a sputtering or vapor plating mode.
Referring to fig. 3, the present invention provides a peeling system comprising:
The glue layer manufacturing device 500 is used for manufacturing a glue layer on the upper surface of the wafer by using positive glue;
The soaking device 600 is used for soaking the wafer in the developing solution so as to enable the photosensitive agent in the adhesive layer to have a crosslinking reaction with the developing solution and convert positive photoresist close to the upper surface of the adhesive layer in the adhesive layer into a hardened adhesive film, wherein the developing rate of the hardened adhesive film is smaller than that of the positive photoresist;
The exposure developing device 700 is used for exposing and developing the wafer so as to enable the adhesive layer to form a special-shaped structure, wherein the cross section width of the special-shaped structure is gradually reduced from top to bottom;
The metal layer manufacturing apparatus 800 is used for attaching a metal material on the upper surface of the wafer and removing the glue layer, so that the patterned metal layer is obtained on the upper surface of the wafer.
In some embodiments, the glue layer manufacturing apparatus 500 includes a glue coating device 510 and a baking device 520, wherein the glue coating device 510 is used for coating positive glue on the upper surface of the wafer, and the baking device 520 is used for baking the wafer after the positive glue is coated on the upper surface of the wafer to obtain the glue layer.
In certain embodiments, the stripping system further comprises a cleaning device 900 for removing residues between two adjacent shaped structures by plasma gas bombardment of the shaped structures.
In some embodiments, the metal layer manufacturing apparatus 800 includes a sputtering device 810 for attaching a metal material to the upper surface of the wafer in a sputtering manner, and/or an evaporation device 820 for attaching a metal material to the upper surface of the wafer in an evaporation manner.
In this document, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
The above description is only an example of the present invention and is not intended to limit the scope of the present invention, and various modifications and variations will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411800493.7A CN119511652A (en) | 2024-12-09 | 2024-12-09 | A positive photoresist stripping method and stripping system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411800493.7A CN119511652A (en) | 2024-12-09 | 2024-12-09 | A positive photoresist stripping method and stripping system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN119511652A true CN119511652A (en) | 2025-02-25 |
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| CN202411800493.7A Pending CN119511652A (en) | 2024-12-09 | 2024-12-09 | A positive photoresist stripping method and stripping system |
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| CN (1) | CN119511652A (en) |
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- 2024-12-09 CN CN202411800493.7A patent/CN119511652A/en active Pending
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