CN119507026A

CN119507026A - Single crystal furnace heating method, device, electronic equipment, medium and product

Info

Publication number: CN119507026A
Application number: CN202411393926.1A
Authority: CN
Inventors: 杨爱丽; 余亮亮; 乔乐; 付明全; 徐志群
Original assignee: Gaojing Solar Co ltd; Sichuan Gaojing Solar Energy Technology Co ltd
Current assignee: Gaojing Solar Co ltd; Sichuan Gaojing Solar Energy Technology Co ltd
Priority date: 2024-10-08
Filing date: 2024-10-08
Publication date: 2025-02-25

Abstract

The application provides a single crystal furnace heating method, a single crystal furnace heating device, electronic equipment, a medium and a product, and relates to the technical field of single crystal furnaces; the method comprises the steps of controlling power to rise to charging power, controlling the single crystal furnace to start preheating, controlling the charging barrel of the single crystal furnace to rise according to preset time after preheating the single crystal furnace, controlling the auxiliary chamber to fall down and tightly close, wherein the preset time is related to the time when the main charging power and/or the bottom charging power reach the charging power and the time before the charging barrel is lifted, and purifying the auxiliary chamber after the auxiliary chamber falls down and tightly closes to meet preset conditions so as to further carry out secondary charging.

Description

Single crystal furnace heating method and device, electronic equipment, medium and product

Technical Field

The application relates to the technical field of single crystal furnaces, in particular to a single crystal furnace heating method, a single crystal furnace heating device, electronic equipment, a medium and a product.

Background

A single crystal Furnace (SINGLE CRYSTAL Furnace) is an apparatus for producing single crystal materials having a wide range of applications in semiconductor, opto-electronics and other high-tech fields, and RCZ (modified Czochralski) is a common single crystal pulling method, which is a method of gradually forming a single crystal by immersing a seed crystal into a molten raw material, and slowly pulling and rotating.

In the prior art, after the single crystal furnace is used for single crystal drawing based on RCZ, single crystal materials need to be disconnected from molten raw materials, after the disconnection is proposed and before charging, the single crystal furnace needs to be preheated to ensure that new raw materials can be quickly melted and uniformly mixed with the existing molten raw materials, wherein in the preheating process, the melting condition of a material block needs to be monitored manually, when the optimal charging time is judged according to the melting condition of the material block, and after the charging time is determined, a furnace table needs to be manually operated for preheating and charging.

However, because the processes all need to be operated manually, the phenomena of overtime preheating, insufficient preheating time of charging, insufficient interval time of charging, failure of secondary crystallization caused by low temperature in the furnace, damage to a quartz crucible and the like can be caused, the hidden trouble of silicon leakage accidents exists, the operation is complex, and the safety is lacking.

Disclosure of Invention

The application provides a single crystal furnace heating method, a single crystal furnace heating device, electronic equipment, a medium and a product, which are used for realizing automatic heating of a single crystal furnace, simplifying an operation flow and improving operation safety.

In a first aspect, the present application provides a method for heating a single crystal furnace, the method comprising:

Responding to the hanging operation of an operator, obtaining the residual quantity in the single crystal furnace, and determining the required ascending charging power according to the residual quantity;

controlling the main power and/or the bottom power to rise until reaching the charging power, and controlling the single crystal furnace to start preheating;

After preheating the single crystal furnace according to preset time, controlling a charging barrel of the single crystal furnace to rise to a first position, and controlling a secondary chamber to rotate to descend tightly, wherein the preset time is related to the time when the main power and/or the bottom power reaches the charging power and the time before the charging barrel is lifted;

And after the descending degree of the auxiliary chamber meets the preset condition, controlling the single crystal furnace to purify the auxiliary chamber, and carrying out secondary feeding after purifying the auxiliary chamber.

Optionally, controlling the secondary chamber to rotate back down and close tightly includes:

Identifying a current crucible position, a heat shield position, and a crystal position;

The crucible is controlled to descend from the crucible position to the feeding crucible position, the heat shield is controlled to ascend from the heat shield position to the heat shield upper limit position, and the crystal is controlled to ascend from the crystal position to the first position.

Optionally, controlling the single crystal furnace to perform sub-chamber purification and performing secondary feeding after the sub-chamber purification, including:

After the charging barrel of the single crystal furnace rotates back to the auxiliary chamber, collecting liquid level pictures in the single crystal furnace at intervals of predefined time;

Identifying the shape of a block in the liquid level picture, and drawing a block rectangle according to the shape of the block;

calculating the solid-liquid ratio in the liquid level picture based on the block rectangle, and judging whether the melting size of the block in the single crystal furnace meets the feeding condition when the solid-liquid ratio reaches a preset threshold value;

if yes, controlling the single crystal furnace to carry out sub-chamber purification, carrying out secondary feeding after the sub-chamber purification, and extracting the charging barrel after the feeding is completed.

Optionally, identifying a block shape in the liquid level picture, and drawing a block rectangle according to the block shape, including:

gray scale processing is carried out on the liquid level picture;

Performing binarization processing on the liquid level picture subjected to gray level processing to obtain a pixel point image;

And determining the shape of the block through the pixel area in the pixel image, and drawing a block rectangle according to the shape of the block.

Optionally, calculating the solid-to-liquid ratio in the liquid level picture based on the block rectangle includes:

determining the area of a first pixel point occupied by the rectangular material block;

Determining the area of a second pixel point occupied by the liquid in the liquid level picture based on the area of the first pixel point;

and calculating the solid-liquid ratio based on the first pixel point area and the second pixel point area.

Optionally, the method further comprises:

when the waiting phenomenon occurs, judging whether the solid-liquid ratio reaches a parameter set value or not by identifying the solid-liquid ratio in the single crystal furnace;

and if yes, controlling the main power and/or the bottom power to be reduced.

In a second aspect, the present application provides a single crystal furnace heating apparatus, the apparatus comprising:

The determining module is used for responding to the hanging operation of an operator, obtaining the residual quantity in the single crystal furnace and determining the required ascending charging power according to the residual quantity;

the control module is used for controlling the main power and/or the bottom power to rise until the charging power is reached, and controlling the single crystal furnace to start preheating;

The preheating module is used for controlling the charging barrel of the single crystal furnace to rise to a first position and controlling the auxiliary chamber to rotate back to descend tightly after preheating the single crystal furnace according to preset time, wherein the preset time is related to the time when the main power and/or the bottom power reaches the charging power and the time before the charging barrel is lifted;

and the charging module is used for controlling the single crystal furnace to carry out secondary chamber purification after the secondary chamber descends and tightly meets the preset condition, and carrying out secondary charging after the secondary chamber purification.

In a third aspect, the present application provides an electronic device comprising a processor, and a memory communicatively coupled to the processor;

The memory stores computer-executable instructions;

the processor executes computer-executable instructions stored by the memory to implement the method of any one of the first aspects.

In a fourth aspect, the present application provides a computer-readable storage medium storing computer-executable instructions for implementing the method of any one of the first aspects when executed by a processor.

In a fifth aspect, the application provides a computer program product comprising a computer program which, when executed by a processor, implements the method according to any of the first aspects.

In summary, the application provides a heating method, a device, electronic equipment, a medium and a product of a single crystal furnace, which are characterized in that the main power and/or the bottom power required to rise are determined by monitoring the residual amount in the single crystal furnace, so that automatic preheating is realized, the single crystal furnace is preheated according to preset time, the preset time is related to the time when the main power and/or the bottom power reach the charging power and the time before a charging barrel is lifted, after the single crystal furnace is preheated in the preset time, the charging barrel is controlled to automatically rise, the auxiliary chamber automatically rotates to descend and tightly close, and after the descending and tightly closing meet the preset condition, automatic auxiliary chamber purification is started, and automatic charging is realized after the auxiliary chamber purification is finished, so that the whole preheating and charging processes can be automatically finished, the possibility of hidden danger occurrence of accidents caused by excessive charging time, insufficient preheating time, excessive charging in the furnace in the charging process and the like can be reduced, the operation frequency of production staff on a furnace table can be reduced while the safety is ensured, and the operation flow of staff is simplified.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application.

FIG. 1 is a schematic diagram of a heating process of a conventional single crystal furnace;

Fig. 2 is a schematic diagram of an application scenario provided in an embodiment of the present application;

fig. 3 is a schematic structural view of a pendant according to an embodiment of the present application;

FIG. 4 is a schematic flow chart of a heating method of a single crystal furnace according to an embodiment of the present application;

FIG. 5 is a schematic diagram of a rectangular block drawn according to an embodiment of the present application;

FIG. 6 is a schematic flow chart of an alternative heating method for a single crystal furnace according to an embodiment of the present application;

FIG. 7 is a schematic structural diagram of a heating device for a single crystal furnace according to an embodiment of the present application;

fig. 8 is a schematic structural diagram of an electronic device according to an embodiment of the present application.

Specific embodiments of the present application have been shown by way of the above drawings and will be described in more detail below. The drawings and the written description are not intended to limit the scope of the inventive concepts in any way, but rather to illustrate the inventive concepts to those skilled in the art by reference to the specific embodiments.

Detailed Description

In order to clearly describe the technical solution of the embodiments of the present application, in the embodiments of the present application, the words "first", "second", etc. are used to distinguish the same item or similar items having substantially the same function and effect. For example, the first device and the second device are merely for distinguishing between different devices, and are not limited in their order of precedence. It will be appreciated by those of skill in the art that the words "first," "second," and the like do not limit the amount and order of execution, and that the words "first," "second," and the like do not necessarily differ.

In the present application, the words "exemplary" or "such as" are used to mean serving as an example, instance, or illustration. Any embodiment or design described herein as "exemplary" or "for example" should not be construed as preferred or advantageous over other embodiments or designs. Rather, the use of words such as "exemplary" or "such as" is intended to present related concepts in a concrete fashion.

In the present application, "at least one" means one or more, and "a plurality" means two or more. "and/or" describes an association of associated objects, meaning that there may be three relationships, e.g., A and/or B, and that there may be A alone, while A and B are present, and B alone, where A, B may be singular or plural. The character "/" generally indicates that the context-dependent object is an "or" relationship. "at least one of" or the like means any combination of these items, including any combination of single item(s) or plural items(s). For example, at least one (a, b, or c) of a, b, c, a-b, a-c, b-c, or a-b-c may be represented, wherein a, b, c may be single or plural.

The following terms of art to which the present application relates are explained:

The main heating power, also called main heater power, refers to the main electric power used to heat the crucible and melt the polysilicon in the single crystal furnace.

Bottom heating power, also referred to as bottom heater power, refers to the electrical power consumed by the auxiliary heater in the single crystal furnace to heat the bottom or hearth area of the crucible, the bottom heater being used for the auxiliary main heater.

The broken line is proposed as a process of lifting the crystal to break the connection with the liquid surface and lifting the crystal out of the molten silicon after the crystal is defective in the growth process of the monocrystalline silicon.

Drawing refers to a process of gradually pulling a single crystal silicon rod from molten silicon by controlling temperature, pulling speed and other parameters during the single crystal silicon production process.

Ending and taking out sections, namely gradually ending the growth process of the crystal through a series of operations after the growth length and the residual material quantity in the crucible reach the process standard in the drawing process of the monocrystalline silicon rod, and taking out the crystal from the melt.

And hanging the material, namely, in the process of pulling the monocrystalline silicon, after the broken wire is lifted or the section is taken out and ended, loading the polycrystalline silicon raw material into a Dan Yingliao cylinder, hanging the quartz cylinder on a heavy hammer, adding the heavy hammer into a monocrystalline furnace, and preparing for melting and pulling the monocrystalline silicon.

In a possible implementation manner, fig. 1 is a schematic diagram of a heating flow of an existing single crystal furnace, as shown in fig. 1, after a single crystal rod is pulled, a tail end taking section or a broken line is put forward, a producer takes out the crystal rod after the crystal rod is cooled, further, after the crystal rod is cooled and taken out, the producer unscrews a graphite chuck with seed crystal, drops a feeding process step, and notifies a hanging material worker to hang materials, further, after the hanging material worker is completed, a charging barrel is lifted into a secondary chamber, the producer checks the residual material quantity in the furnace, and the preheating time is calculated according to the preheating process standard according to the residual material quantity in the furnace, further, the single crystal furnace is manually controlled to be preheated in the preheating time, and after the preset time reaches the standard, the charging barrel is rotated back automatically, further, the producer also needs to measure the preheating time automatically, confirms the process step of purifying the secondary chamber without abnormal back point, so that the furnace table is automatically fed after the automatic secondary chamber is purified.

Therefore, after the single crystal furnace is pulled, ended or broken wire is pulled based on RCZ, the preheating time is needed to be calculated manually before charging, the melting condition of the material block is paid attention to manually, the charging time is judged, and the furnace platform of the single crystal furnace is operated manually to preheat and charge.

The manual calculation and the manual operation can have personnel operation difference and errors, so that phenomena of overtime preheating, overtime feeding interval, long-time baking of the quartz crucible with high power, insufficient feeding preheating time, insufficient feeding interval time, secondary crystallization damage to the quartz crucible due to low temperature in the furnace and the like are caused, the hidden danger of silicon leakage accidents is caused, the safety is lacked, and the manual operation is more complicated.

In order to solve the problems, the application provides a heating method of a single crystal furnace, which is characterized in that the main heating power and/or the bottom heating power required to rise are determined by monitoring the residual material quantity in the single crystal furnace, so that automatic preheating is realized, the single crystal furnace is preheated according to preset time which is set in advance, the preset time is related to the time when the main heating power and/or the bottom heating power reach the feeding power and the time before a charging barrel is lifted, after the single crystal furnace is preheated in the preset time, the charging barrel is controlled to automatically rise, the auxiliary chamber automatically rotates to descend and tightly close, and then after the descending and tightly close meets preset conditions, automatic auxiliary chamber purification is started, and automatic feeding is realized after auxiliary chamber purification is finished, so that the whole preheating and feeding processes can be automatically completed, the possibility of hidden accidents caused by excessive material blocks, excessive feeding and the like in the furnace in the feeding process can be reduced, the operation frequency of production staff on a furnace bench can be reduced, the operation flow is simplified, and personnel is reduced while the safety is ensured.

Fig. 2 is a schematic diagram of an application scenario provided in an embodiment of the present application, as shown in fig. 2, where the application scenario may be applied to a process of charging a single crystal furnace, especially before secondary charging, where the application scenario includes a single crystal furnace 203, a furnace table system 202, and a display device 201 corresponding to the furnace table system 202, where the furnace table system 202 is used to support and operate components such as a crucible, a heater, a heat shield, etc., and provide necessary movement, monitoring, and control functions, such as rotating the crucible, controlling lifting of a charging barrel, monitoring temperatures of the crucible and a melt, collecting and recording key parameters such as temperature, pull speed, etc.

The single crystal furnace 203 comprises a main heater, a bottom heater and a quartz crucible, wherein the quartz crucible is internally provided with crystal pulling liquid, and the main heater and the bottom heater are used for providing heat energy.

Illustratively, after the crystal bar is cooled and taken out, after a production staff unscrews the graphite chuck with the seed crystal and places the graphite chuck safely, an interphone informs a material hanging worker to prepare a hanging piece for hanging materials, and after the temperature in the single crystal furnace 203 is lower and does not reach the material melting standard after the bar is taken out, main power and/or bottom power is/are required to be increased to the charging power to finish preheating, and then charging can be performed.

Therefore, in response to the hanging operation of the hanging worker, the furnace platform system 202 can obtain the residual material amount in the single crystal furnace 203, further determine the required ascending charging power according to the residual material amount, further control the main charging power and/or the bottom charging power to ascend according to the charging power, and start preheating after ascending to the charging power, further, after preheating the single crystal furnace 203 in a preset time, control the charging barrel to automatically ascend, the auxiliary chamber to automatically rotate back and descend tightly, and start automatic auxiliary chamber purification after the descending tightly meets the preset condition, so that the furnace platform system 202 can realize the functions of automatic preheating and automatic charging of the single crystal furnace 203 after the auxiliary chamber purification is completed.

The hanging piece is a screw device, fig. 3 is a schematic structural diagram of the hanging piece provided by the embodiment of the application, as shown in fig. 3, the hanging piece is screwed on the heavy hammer 205, the heavy hammer 205 is hung at the tail end of the upper shaft tungsten wire 204, the graphite chuck is screwed on the heavy hammer 205, and the seed crystal is arranged in the graphite chuck.

Optionally, operators such as production staff and material hanging workers can perform a series of selection operations based on the display device 201 corresponding to the furnace platform system 202 to trigger corresponding procedures, for example, the operator performs a re-feeding operation based on the display device 201 corresponding to the furnace platform system 202, and the procedure corresponding to the selection operation is not limited in particular in the embodiment of the present application.

Optionally, the display device 201 corresponding to the oven system 202 is further configured to display a processing result, a monitoring result, a shot picture, etc. of each process, for example, the main power and/or the bottom power, the temperature in the oven, the acquired picture of the block in the oven, etc. can be displayed in real time for viewing by related staff or operators.

The following describes the technical scheme of the present application and how the technical scheme of the present application solves the above technical problems in detail with specific embodiments. The following embodiments may be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments. Embodiments of the present application will be described below with reference to the accompanying drawings.

Fig. 4 is a schematic flow chart of a heating method of a single crystal furnace according to an embodiment of the present application, taking an implementation main body as a furnace platform system as an example, as shown in fig. 4, the heating method of the single crystal furnace includes the following steps:

S401, responding to the hanging operation of an operator, obtaining the residual quantity in the single crystal furnace, and determining the required ascending charging power according to the residual quantity.

In the embodiment of the application, the residual polysilicon raw material amount in the single crystal furnace can be detected by a sensor or other monitoring equipment, and the mode of obtaining the residual material amount in the single crystal furnace is not particularly limited.

In this step, the charging power to be increased, including the main heater power and/or the bottom heater power, may be calculated based on the detected amount of residuals to ensure that the melt temperature reaches a level suitable for crystal growth, wherein the charging power is a set parameter threshold for ensuring that the temperature in the furnace reaches a desired temperature threshold.

Optionally, after finishing the operation proposed by single drawing ending and taking out sections or constant diameter wire breakage according to the quality requirement of the single crystal furnace, controlling the crystal rod to be taken out after cooling, responding to the chuck unscrewing operation of the second operator on the crystal rod, generating prompt information to prompt the first operator to carry out the hanging operation, and further executing S401.

The first operator can click the step of re-throwing the material according to the process standard requirement, so that after clicking the step, the furnace platform system automatically grabs the real-time residual material in the furnace.

S402, controlling the main power and/or the bottom power to rise until the charging power is reached, and controlling the single crystal furnace to start preheating.

Illustratively, the power of the main heater and/or the bottom heater is gradually increased by the hearth system until the calculated charge power is reached, and then preheating of the single crystal furnace is started after the heater power reaches the desired level to ensure that the melt temperature is uniform and stable.

S403, after preheating the single crystal furnace according to preset time, controlling a charging barrel of the single crystal furnace to rise to a first position, and controlling a secondary chamber to rotate back to descend tightly, wherein the preset time is related to the time when the main power and/or the bottom power reaches the charging power and the time before the charging barrel is lifted.

In the embodiment of the present application, the preheating time may be preset according to experience and process requirements to ensure that the melt reaches a temperature suitable for charging, and the size of the preheating time is not particularly limited in the embodiment of the present application, where the preheating time=the time from the time when the main charging power and/or the bottom charging power rises to the time when the main charging power reaches the time when the bottom charging power is introduced into the charging barrel and is lifted.

For example, after preheating, the furnace platform system controls the charging barrel to rise to a first position, and prepares for charging operation, wherein the first position is a preset position away from the crystal, such as 4650mm away from the crystal position, the first position is not particularly limited in the embodiment of the application, and the first position can correspond to different crystal positions based on different process requirements.

Further, after the charging barrel of the single crystal furnace is lifted to the first position, the auxiliary chamber is controlled to be rotated and lowered tightly, wherein the auxiliary chamber is a sealed charging chamber, so that the auxiliary chamber needs to be controlled to be rotated and lowered tightly to prevent external air from entering the furnace.

In the present application, the preset time includes not only the preheating time, but also the time when the heater power reaches the required level and the time when the cartridge rises and the sub-chamber seals are taken into consideration, so that the stability of the preheating process can be ensured.

S404, after the auxiliary chamber descends and tightly meets the preset condition, controlling the single crystal furnace to purify the auxiliary chamber, and carrying out secondary feeding after purifying the auxiliary chamber.

In the embodiment of the application, the preset condition refers to that the fact that the auxiliary chamber is completely sealed is confirmed, the preset sealing condition is met, the preset sealing condition can be set through the length of time, if the time length of the descending and tightly closing of the auxiliary chamber is larger than a time threshold value, the descending and tightly closing of the auxiliary chamber is confirmed to meet the preset condition, the content corresponding to the preset condition is not particularly limited, and the preset sealing condition can be set through checking the sealing degree of the auxiliary chamber.

Thus, after the sub-chamber purge, which is an atmosphere purge after the sub-chamber is sealed, oxygen and other impurities in the sub-chamber are purged, usually by filling an inert gas such as argon, to prevent oxidation of the melt, a secondary charging operation may be performed to add new polysilicon raw material to the melt to ensure continuous supply and stability of the melt.

Therefore, the embodiment of the application provides a single crystal furnace heating method, which can quickly and accurately acquire the residual material quantity and calculate the required charging power by responding to the hanging operation of operators, reduce human intervention and operation time, further accurately calculate and control the charging power according to the residual material quantity, ensure the uniformity and stability of the temperature of a melt, reduce the temperature fluctuation and defects in the crystal growth process, preheat according to the preset time, ensure the melt to quickly reach the temperature suitable for melting the silicon material, avoid the phenomenon of secondary crystallization failure, damage to a quartz crucible and the like caused by low temperature in the furnace, and improve the overall production efficiency.

Optionally, after preheating the single crystal furnace according to a preset time, controlling the charging barrel of the single crystal furnace to rise to a first position, including:

After the crystals are hung, controlling the crystals to rise to a second position, and controlling the single crystal furnace to preheat within the preset time;

and after preheating is finished, controlling the charging barrel of the single crystal furnace to rise to the first position.

For example, after the material is hung, the crystal position may be raised to a second position, for example, above 2750mm from the crystal position, so that the oven system performs a preheating time with a parameter set, and after the preheating time is reached, the control cylinder is automatically raised to the first position, for example, above 4650mm from the crystal position.

The second position is usually an intermediate position, so that the preheating operation is convenient, and the first position is usually a starting position of crystal growth, so that the subsequent crystal pulling operation is convenient.

Therefore, the embodiment of the application can ensure that the isolation valve is in a safe position when being opened or closed by preheating in stages, namely, firstly rising to the second position for preheating and then rising to the first position, wherein after the control crystal rises to the second position, the system can identify the position of the crystal, further control the automatic rotation auxiliary chamber, reduce manual operation and further control the charging barrel of the single crystal furnace to rise to the first position.

In the embodiment of the application, the current positions of the crucible, the heat shield and the crystal are detected in real time by the sensor or other monitoring equipment, and the type of equipment for identifying the current positions of the crucible, the heat shield and the crystal is not particularly limited, and can be a camera, a visual sensor and the like.

In this step, the secondary chamber rotation process includes the automatic recognition of the current crucible position, heat shield position and crystal position by the hearth system, the automatic lowering of the crucible position to the feed crucible position, the automatic raising of the heat shield position to the upper limit, and the automatic raising of the crystal to the first position, e.g., 4650mm from the crystal position, after the recognition of the crystal position.

Wherein, the charging crucible position is a position convenient for adding the polysilicon raw material so as to ensure the smooth proceeding of the charging operation.

Therefore, the embodiment of the application ensures that the position adjustment of the crucible, the heat shield and the crystal is accurate in place through real-time monitoring and adjustment, reduces position errors, and can effectively avoid potential safety hazards caused by abnormal positions of the crucible, the heat shield and the crystal through accurately controlling the positions of the crucible, the heat shield and the crystal, wherein the crucible is lowered to the position of the feeding crucible, so that the feeding operation of a system is facilitated, and the feeding efficiency is improved.

In the embodiment of the application, the predefined time length is a time interval which is set in advance and is used for collecting the liquid level pictures in the furnace, the predefined time length can be determined based on the process requirement, and can be modified manually.

In the embodiment of the application, the visual system for collecting the liquid level picture of the liquid level in the single crystal furnace can be used for collecting the liquid level picture of the liquid level in the furnace based on a visual system, such as a camera, a camera and the like, wherein the liquid level comprises molten silicon liquid and unmelted material blocks, the visual system for collecting the liquid level picture is not particularly limited, furthermore, the furnace table system can be used for collecting the liquid level picture in the single crystal furnace from the visual system at intervals of a predefined time period, alternatively, the visual system can also be a part of the furnace table system, the furnace table system can further be used for acquiring the liquid level picture in the single crystal furnace in real time, and further, the liquid level picture in the single crystal furnace in the summarized predefined time period is subjected to subsequent processing.

The furnace table system automatically extracts the discharge cylinder after the first barrel of material is added, and hangs the second barrel of material to be turned back to the auxiliary chamber, at this time, a liquid level picture in the furnace can be collected through a camera, about 23 pieces/min is further obtained, every 6min, the furnace table system draws a rectangular block according to the collected liquid level picture and according to the shape of the block in the liquid level picture, and an exemplary diagram of the rectangular block drawn by the embodiment of the application is shown in fig. 5, wherein the rectangular block drawn at different time is shown as an example, the rectangular block drawn at the first moment is shown as a rectangle drawn at the second moment, and the rectangular block melted at the second moment is more than the rectangular block drawn at the first moment is shown as a rectangle drawn at the second moment in fig. 5.

It will be appreciated that the method of drawing the block shape in the liquid level picture according to the embodiment of the present application is not particularly limited, and the method of drawing the block shape in the liquid level picture may be used for drawing the block shape in the liquid level picture by using an image processing algorithm such as edge detection, shape recognition, and the like.

Further, for each liquid level picture, according to the rectangle of the drawing material block, the ratio of solid (material block) to liquid (silicon liquid) in the whole picture is calculated to form a solid-liquid ratio, when the solid-liquid ratio reaches a preset threshold value set by parameters, the melting size of the material block in the furnace is judged to be in accordance with the charging condition, at the moment, automatic auxiliary chamber purification is started, secondary charging is carried out after the auxiliary chamber purification, and a charging barrel is put out after the charging.

The preset threshold is a solid-liquid ratio threshold preset according to the process requirement, and is used as a standard for judging the state of the melt, and the size of the preset threshold is not particularly limited, for example, can be 1:3.

Therefore, the solid-liquid state in the melt can be monitored in real time by collecting liquid level pictures at fixed time and analyzing images, the accuracy of feeding operation is ensured, the melt state is automatically judged by using an image processing method, human intervention and misjudgment are reduced, and the accuracy and automation of the operation are improved, wherein the melting degree of a material block in the melt can be accurately judged by calculating the solid-liquid ratio, the feeding operation is ensured to be carried out at the optimal time, the feeding process is optimized, and the accurate feeding time judgment is beneficial to reducing the waste of raw materials and improving the utilization rate of polysilicon raw materials.

gray scale processing is carried out on the liquid level picture;

In the embodiment of the application, gray processing is used for simplifying image information and reducing calculation complexity, and binarization processing is used for further simplifying image information, so that objects (such as blocks) in an image are more clearly separated from the background, and subsequent shape recognition and analysis are facilitated.

In the application, by drawing the rectangle of the block, the shape and the position of the block can be more intuitively represented, and basic data can be provided for the subsequent solid-liquid ratio calculation.

Illustratively, the liquid level picture is subjected to gray processing and converted into a gray picture, further, the gray picture is converted into a binary image, each pixel point in the binary image has only two possible values of 0 (black) or 1 (white), further, in the binary image, the shape of the block is recognized by analyzing the distribution and the color of the pixel point, and a rectangle surrounding the block is drawn according to the recognized shape of the block, and can be used for calculating the area of the block.

The method comprises the steps of carrying out gray level processing on a liquid level image, converting the liquid level image into a single-channel gray level image, reducing data volume and calculation complexity, improving image processing efficiency, enabling objects in the image to be separated from a background more clearly through binarization processing, enabling the image after binarization processing to have clear object boundaries, being beneficial to accurately identifying the shape and the position of a block, effectively reducing noise interference in the image through gray level processing and binarization processing, and improving accuracy of shape identification.

It should be noted that, in the above embodiment, the shape of the block in the liquid level picture is identified by the image processing technique, and a rectangle surrounding the block is drawn, further, the number of pixels in the rectangle of the block may be counted, and these pixels represent the area of the block, which is referred to as the first pixel area.

Further, the pixel area occupied by the liquid can be obtained by counting the total pixel area in the whole liquid level picture and subtracting the first pixel area from the total pixel area, the area is called as the second pixel area, and further, the solid-liquid ratio is obtained based on the first pixel area/the second pixel area, the solid-liquid ratio reflects the ratio of the solid material block to the liquid silicon in the melt, the melting degree of the material block in the melt can be judged by calculating the solid-liquid ratio, and further, whether the feeding operation is needed or not is determined.

Therefore, the embodiment of the application can accurately monitor the state of the melt, timely and accurately judge the melting degree of the material block in the melt and ensure the feeding operation at the optimal time by determining the area of the first pixel point occupied by the material block rectangle, calculating the area of the second pixel point occupied by the liquid and calculating the solid-liquid ratio based on the two areas.

Optionally, the method further comprises:

and if yes, controlling the main power and/or the bottom power to be reduced.

In the embodiment of the application, the phenomenon of waiting for the material refers to the phenomenon that the raw material cannot be sent to the side of the furnace platform in time, so that when the phenomenon of waiting for the material occurs on the charging furnace platform, the furnace platform system judges whether the solid-liquid ratio reaches a parameter set value by identifying the solid-liquid ratio in the furnace, if so, the main power and/or the bottom power are automatically lowered, and the potential safety hazard is avoided by baking the crucible for a long time with high power.

The parameter set value may be a solid-liquid ratio threshold value preset according to the process requirement, and the embodiment of the application does not specifically limit the parameter set value as a standard for judging the state of the melt, and when the solid-liquid ratio reaches or exceeds the preset parameter set value, the condition that the material block in the melt is melted to the extent meeting the process requirement is indicated.

It should be noted that, the embodiment of the present application is not limited to the values of the main power and/or the bottom power, and may be determined based on the process requirement, and only needs to ensure the power reduction, and the phenomenon of high power long-time crucible baking will not occur.

Therefore, when the phenomenon of waiting for materials occurs, the heating power is timely adjusted, the crucible is prevented from being baked for a long time with high power, the excessive consumption and damage of crucible materials are prevented, the service life of the crucible is prolonged, the heating power is timely reduced, the thermal stress in the crucible and the melt can be reduced, and the generation of cracks and defects is avoided.

In combination with the foregoing embodiments, fig. 6 is a schematic flow chart of an alternative heating method for a single crystal furnace according to an embodiment of the present application, as shown in fig. 6, where the heating method for a single crystal furnace includes the following steps:

And step A, after single drawing, ending and segment taking or equal-diameter broken wire extraction are completed by the single crystal furnace according to the quality requirement, the crystal rod is controlled to be taken out after being cooled, and then a production staff is notified of hanging materials after unscrewing the chuck.

And B, responding to the hanging operation of a hanging worker, obtaining the residual quantity in the furnace, determining the required ascending charging power according to the residual quantity, and further controlling the main charging power and/or the bottom charging power to ascend to the charging power and then starting preheating.

And C, automatically lifting the charging barrel and rotating the auxiliary chamber after the preheating time set by the furnace platform system according to the parameters is reached, automatically closing the auxiliary chamber for 1 minute, automatically purifying the auxiliary chamber by the furnace platform, and automatically feeding materials after the auxiliary chamber is purified.

Therefore, through the automatic operation, the frequency of operating the hearth by production staff is greatly reduced, and the operation is safer and more efficient.

In the foregoing embodiment, the single crystal furnace heating method provided by the embodiment of the present application is described, and in order to implement each function in the method provided by the embodiment of the present application, the electronic device as the execution body may include a hardware structure and/or a software module, and each function may be implemented in the form of a hardware structure, a software module, or a hardware structure and a software module. Some of the functions described above are performed in a hardware configuration, a software module, or a combination of hardware and software modules, depending on the specific application of the solution and design constraints.

For example, fig. 7 is a schematic structural diagram of a heating device of a single crystal furnace according to an embodiment of the present application, as shown in fig. 7, where the device includes a determining module 701, configured to obtain a residual amount in the single crystal furnace in response to a hanging operation of an operator, and determine a required ascending charging power according to the residual amount;

The control module 702 is used for controlling the main power and/or the bottom power to rise until the charging power is reached, and controlling the single crystal furnace to start preheating;

the preheating module 703 is used for controlling the charging barrel of the single crystal furnace to rise to a first position and controlling the auxiliary chamber to rotate back to descend tightly after preheating the single crystal furnace according to preset time, wherein the preset time is related to the time when the main power and/or the bottom power reaches the charging power and the time before the charging barrel is lifted;

And the charging module 704 is used for controlling the single crystal furnace to carry out secondary chamber purification after the secondary chamber descends and tightly meets the preset condition, and carrying out secondary charging after the secondary chamber purification.

Optionally, the preheating module 703 is specifically configured to:

Optionally, the charging module 704 includes a collecting unit, an identifying unit, a determining unit, and a charging unit;

the collecting unit is used for collecting liquid level pictures in the single crystal furnace at intervals of predefined time after the charging barrel of the single crystal furnace rotates back to the auxiliary chamber;

The identification unit is used for identifying the shape of the material block in the liquid level picture and drawing a rectangle of the material block according to the shape of the material block;

the judging unit is used for calculating the solid-liquid ratio in the liquid level picture based on the block rectangle, and judging whether the melting size of the block in the single crystal furnace meets the feeding condition or not when the solid-liquid ratio reaches a preset threshold value;

The charging unit is used for controlling the single crystal furnace to carry out secondary chamber purification when the melting size of the material block in the single crystal furnace meets charging conditions, carrying out secondary charging after the secondary chamber purification, and providing the charging barrel after the charging is completed.

Optionally, the identifying unit is specifically configured to:

gray scale processing is carried out on the liquid level picture;

Optionally, the determining unit is specifically configured to:

Optionally, the device further includes a judging module, where the judging module is configured to:

and if yes, controlling the main power and/or the bottom power to be reduced.

The specific implementation principle and effect of the heating device of the single crystal furnace can be referred to the corresponding related description and effect of the above embodiment, and will not be repeated here.

The embodiment of the application further provides a schematic structural diagram of an electronic device, and fig. 8 is a schematic structural diagram of an electronic device provided by the embodiment of the application, as shown in fig. 8, the electronic device may include a processor 801 and a memory 802 communicatively connected to the processor, where the memory 802 stores a computer program, and the processor 801 executes the computer program stored in the memory 802, so that the processor 801 executes the method described in any of the embodiments.

Wherein the memory 802 and the processor 801 may be connected by a bus 803.

Embodiments of the present application also provide a computer-readable storage medium storing computer-executable instructions that, when executed by a processor, are configured to implement a method as described in any of the foregoing embodiments of the present application.

The embodiment of the application also provides a chip for running instructions, and the chip is used for executing the method in any of the previous embodiments executed by the electronic equipment in any of the previous embodiments.

Embodiments of the present application also provide a computer program product comprising a computer program which, when executed by a processor, performs a method as in any of the preceding embodiments of the present application, as in any of the preceding embodiments performed by an electronic device.

In the several embodiments provided by the present application, it should be understood that the disclosed apparatus and method may be implemented in other manners. For example, the apparatus embodiments described above are merely illustrative, e.g., the division of modules is merely a logical function division, and there may be additional divisions of actual implementation, e.g., multiple modules or components may be combined or integrated into another system, or some features may be omitted, or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be an indirect coupling or communication connection via some interfaces, devices or modules, which may be in electrical, mechanical, or other forms.

The modules illustrated as separate components may or may not be physically separate, and components shown as modules may or may not be physical units, may be located in one place, or may be distributed over multiple network units. Some or all of the modules may be selected according to actual needs to implement the solution of this embodiment.

In addition, each functional module in the embodiments of the present application may be integrated in one processing unit, or each module may exist alone physically, or two or more modules may be integrated in one unit. The units formed by the modules can be realized in a form of hardware or a form of hardware and software functional units.

The integrated modules, which are implemented in the form of software functional modules, may be stored in a computer readable storage medium. The software functional modules described above are stored in a storage medium and include instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) or processor to perform some of the steps of the methods described in the various embodiments of the application.

It should be appreciated that the Processor may be a central processing unit (Central Processing Unit, abbreviated as CPU), or may be other general purpose Processor, digital signal Processor (DIGITAL SIGNAL Processor, abbreviated as DSP), application SPECIFIC INTEGRATED Circuit (ASIC), or the like. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like. The steps of a method disclosed in connection with the present application may be embodied directly in a hardware processor for execution, or in a combination of hardware and software modules in a processor for execution.

The Memory may include a high-speed random access Memory (Random Access Memory, abbreviated as RAM), and may further include a Non-volatile Memory (NVM), such as at least one magnetic disk Memory, and may also be a U-disk, a removable hard disk, a read-only Memory, a magnetic disk, or an optical disk.

The bus may be an industry standard architecture (Industry Standard Architecture, ISA) bus, an external device interconnect (PERIPHERAL COMPONENT INTERCONNECT, PCI) bus, or an extended industry standard architecture (Extended Industry Standard Architecture, EISA) bus, among others. The buses may be divided into address buses, data buses, control buses, etc. For ease of illustration, the buses in the drawings of the present application are not limited to only one bus or to one type of bus.

The storage medium may be implemented by any type of volatile or non-volatile Memory device or combination thereof, such as Static Random-Access Memory (SRAM), electrically erasable programmable Read-Only Memory (ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY EEPROM), erasable programmable Read-Only Memory (Erasable Programmable Read-Only Memory, EPROM), programmable Read-Only Memory (Programmable Read-Only Memory, PROM), read-Only Memory (ROM), magnetic Memory, flash Memory, magnetic disk, or optical disk. A storage media may be any available media that can be accessed by a general purpose or special purpose computer.

An exemplary storage medium is coupled to the processor such the processor can read information from, and write information to, the storage medium. In the alternative, the storage medium may be integral to the processor. The processor and the storage medium may reside in an Application SPECIFIC INTEGRATED Circuits (ASIC). It is also possible that the processor and the storage medium reside as discrete components in an electronic device or a master device.

It should be noted that, for simplicity of description, the foregoing method embodiments are all described as a series of acts, but it should be understood by those skilled in the art that the present application is not limited by the order of acts described, as some steps may be performed in other orders or concurrently in accordance with the present application. Further, those skilled in the art will also appreciate that the embodiments described in the specification are alternative embodiments, and that the acts and modules referred to are not necessarily required for the present application.

It should be further noted that, although the steps in the flowchart are sequentially shown as indicated by arrows, the steps are not necessarily sequentially performed in the order indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least a portion of the steps in the flowcharts may include a plurality of sub-steps or stages that are not necessarily performed at the same time, but may be performed at different times, the order in which the sub-steps or stages are performed is not necessarily sequential, and may be performed in turn or alternately with at least a portion of the sub-steps or stages of other steps or other steps.

In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments. The technical features of the foregoing embodiments may be arbitrarily combined, and for brevity, all of the possible combinations of the technical features of the foregoing embodiments are not described, however, all of the combinations of the technical features should be considered as being within the scope of the disclosure.

Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed herein. This application is intended to cover any variations, uses, or adaptations of the application following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the application pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.

The foregoing is merely a specific implementation of the embodiment of the present application, but the protection scope of the embodiment of the present application is not limited to this, and any changes or substitutions within the technical scope disclosed in the embodiment of the present application should be covered in the protection scope of the embodiment of the present application. Therefore, the protection scope of the embodiments of the present application shall be subject to the protection scope of the claims.

Claims

1. A single crystal furnace heating method, characterized in that the method comprises:

2. The method of claim 1, wherein controlling the minor chamber to rotate back down comprises:

3. The method of claim 1, wherein controlling the single crystal furnace to perform sub-chamber cleaning and to perform secondary charging after sub-chamber cleaning comprises:

4. A method according to claim 3, wherein identifying a block shape in the level picture and drawing a block rectangle from the block shape comprises:

gray scale processing is carried out on the liquid level picture;

5. The method of claim 4, wherein calculating the solid to liquid ratio in the level picture based on the block rectangle comprises:

6. The method according to any one of claims 1-5, further comprising:

and if yes, controlling the main power and/or the bottom power to be reduced.

7. A single crystal furnace heating apparatus, the apparatus comprising:

8. An electronic device comprising a processor and a memory communicatively coupled to the processor;

The memory stores computer-executable instructions;

the processor executes computer-executable instructions stored in the memory to implement the method of any one of claims 1-6.

9. A computer readable storage medium storing computer executable instructions which when executed by a processor are adapted to implement the method of any one of claims 1-6.

10. A computer program product comprising a computer program which, when executed by a processor, implements the method according to any of claims 1-6.