CN119480716A - Gas supply assembly and semiconductor etching equipment - Google Patents
Gas supply assembly and semiconductor etching equipment Download PDFInfo
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- CN119480716A CN119480716A CN202411776631.2A CN202411776631A CN119480716A CN 119480716 A CN119480716 A CN 119480716A CN 202411776631 A CN202411776631 A CN 202411776631A CN 119480716 A CN119480716 A CN 119480716A
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- supply assembly
- shower plate
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- 238000005530 etching Methods 0.000 title claims description 28
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 239000007921 spray Substances 0.000 claims abstract description 71
- 230000007704 transition Effects 0.000 claims abstract description 55
- 238000005507 spraying Methods 0.000 claims description 63
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000009826 distribution Methods 0.000 abstract description 21
- 239000007789 gas Substances 0.000 description 154
- 238000000034 method Methods 0.000 description 47
- 230000008569 process Effects 0.000 description 44
- 210000002381 plasma Anatomy 0.000 description 38
- 239000000758 substrate Substances 0.000 description 29
- 239000000463 material Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000009827 uniform distribution Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004074 SiF6 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention provides a gas supply assembly which comprises a first spray disc, a second spray disc, a first gas inlet and a second gas inlet, wherein the first spray disc comprises a central circular area, an edge annular area and a transition annular area positioned between the central circular area and the edge annular area, the first spray disc is provided with the first gas holes, the first gas holes are formed in the thickness direction of the first spray disc, at least one of the central circular area, the transition annular area and the edge annular area of the first spray disc is provided with the first gas holes, the second spray disc is provided with the second gas holes, the second gas holes are formed in the thickness direction of the second spray disc, the first spray disc and the second spray disc are stacked up and down, and the first gas inlet is positioned right above the first spray disc, and the second gas inlet is positioned between the first spray disc and the second spray disc. The gas supply assembly provided by the invention can improve the uniformity of plasma distribution.
Description
Technical Field
The present invention relates to the field of semiconductor devices, and in particular, to a gas supply assembly and a semiconductor etching device.
Background
In the integrated circuit manufacturing process, etching equipment is required to perform etching operations on a substrate for a plurality of times. For example, during plasma etching, a plasma generated by a plasma source reaches the substrate surface through a gas distribution plate (shadow head) to form a plasma over the mask surface of the substrate. By adjusting the potential of the substrate, charged particles in the plasma may be directed to impinge vertically on the substrate, causing material in the unmasked areas of the substrate to be removed. In order to make the etching rate of the substrate surface uniform, it is necessary to improve the uniformity of the distribution of plasma on the substrate surface.
In the prior art, an etching apparatus includes an upper chamber lid and a chamber, a gas inlet for a plasma is provided at a central position of the upper chamber lid, a gas distribution plate is provided right under the gas inlet, and the plasma flows through the gas distribution plate to a processing region defined between the gas distribution plate and a substrate support of the processing chamber. The uniformity of the plasma distribution on the surface of the substrate can be improved by designing the gas distribution plate.
Disclosure of Invention
The invention aims to provide a gas supply assembly and semiconductor etching equipment using the same.
In order to achieve the above object, the present invention is achieved by a gas supply assembly comprising:
The first spray disk comprises a central circular area, an edge annular area and a transition annular area positioned between the central circular area and the edge annular area, wherein the first spray disk is provided with first air holes which are arranged along the thickness direction of the first spray disk;
The second spraying disc is provided with second air holes, the second air holes are formed along the thickness direction of the second spraying disc, and the first spraying disc and the second spraying disc are stacked up and down;
the first air inlet is positioned right above the first spray disc;
the second air inlet is positioned between the first spraying disc and the second spraying disc, and the air inlet direction of the second air inlet is different from the air inlet direction of the first air inlet.
Preferably, the central circular area, the transition annular area and the edge annular area of the first spraying disc are all provided with first air holes, and the densities of the first air holes in the central circular area, the transition annular area and the edge annular area are different.
Preferably, the transition annular region and the edge annular region of the first spray disk are provided with first air holes, and the density of the first air holes in the transition annular region is higher than that in the edge annular region.
Preferably, the central circular area and the transition annular area of the first spray disk are provided with first air holes, and the density of the first air holes in the central circular area is smaller than that in the transition annular area.
Preferably, the edge annular region of the first spraying disc is also provided with first air holes, and the density of the first air holes in the edge annular region is smaller than that of the first air holes in the transition annular region.
Preferably, the first spraying disc is positioned in the central circular area, the transition annular area and the edge annular area, and the first air hole apertures are different.
Preferably, the first air hole aperture of the first spray disk in the central circular area is smaller than the first air hole aperture of the first spray disk in the transition annular area.
Preferably, the first air hole aperture of the first spraying disc in the transition annular area is larger than the first air hole aperture of the first spraying disc in the edge annular area.
Preferably, the first air holes of the central circular area, the transition annular area and the edge annular area of the first spray disk are arranged along the radial direction.
Preferably, the first air holes of the central circular area, the transition annular area and the edge annular area of the first spray disk are circumferentially distributed.
Preferably, the second air holes of the second spraying disc have the same aperture, and the distances between the adjacent second air holes are the same.
Preferably, the minimum aperture of the first air holes of the first spraying disc is larger than the aperture of the second air holes of the second spraying disc, and the first air holes and the second air holes are arranged in a staggered mode.
Preferably, the thickness of the central circular area of the first spraying disc is larger than that of the edge annular area.
Preferably, the first spraying disc is provided with a first surface opposite to the second spraying disc, the second spraying disc is provided with a second surface opposite to the first spraying disc, an annular connecting side wall is arranged between the first surface and the second surface and positioned at the edge of the first spraying disc and the edge of the second spraying disc, the upper surface of the annular connecting side wall is connected with the first surface, the lower surface of the annular connecting side wall is connected with the second surface, and a third air hole is arranged on the annular connecting side wall and is arranged along the thickness direction of the annular connecting side wall.
Preferably, the edge of the second spraying disk is provided with a mounting convex part higher than the second surface, the first spraying disk and the annular connecting side wall are integrally formed, the edge of the first spraying disk is provided with an annular extending part, the annular extending part is connected with the side wall of the mounting convex part, and a first gas homogenizing zone is formed by the lower surface of the annular extending part of the first spraying disk, the second surface of the second spraying disk, the annular outer surface of the annular connecting side wall and the side wall of the mounting convex part.
Preferably, the second air inlet is positioned on the mounting convex part of the second spray disk, and the second air inlet is communicated with the first air homogenizing zone.
Preferably, the third air hole formed in the annular connecting sidewall has a high-density region and a low-density region, the low-density region being disposed near the second air inlet region, and the high-density region being disposed away from the second air inlet region.
A semiconductor etching device comprises an upper cavity cover, a chamber and a supporting base, wherein a first air inlet is formed in the center of the upper cavity cover, a gas supply assembly is fixed to the upper cavity cover and located right below the first air inlet, the upper cavity cover is located above the chamber, the supporting base is arranged in the chamber, the gas supply assembly is located right above the supporting base, and the center of the gas supply assembly is aligned with the center of the supporting base.
Compared with the prior art, the invention has the following advantages:
1. The invention comprises a first spray disk positioned on an upper layer and a second spray disk positioned on a lower layer, wherein the first spray disk and an upper cavity cover form a primary gas homogenizing space, a secondary gas homogenizing space is formed between the first spray disk and the second spray disk, and the uniform distribution of the surface plasma of the substrate is realized through the design of the two layers of gas spray disks.
2. According to the invention, the densities and the apertures of the first air holes in the central circular area, the transition annular area and the edge annular area of the first spray disk are different, the densities and the apertures of the first air holes are determined through the etching rate map, and the uniformity of the plasma distribution on the surface of the substrate can be improved through the arrangement of the first air holes with different densities and apertures.
3. According to the invention, the second air inlet arranged on the side surface of the gas supply assembly is added, and the second air inlet can be filled with another process gas or diluent gas, so that the uniformity of the surface plasma of the substrate is regulated, and the uniformity of etching is improved. In addition, when the etching gas is two or more process gases, in order to avoid the gases from being mixed in advance, the desired mixing effect can be achieved by introducing the two gases into the first gas inlet and the second gas inlet, respectively.
4. According to the invention, the first air homogenizing zone is arranged between the second air inlet and the third air hole, the third air hole formed on the annular connecting side wall is divided into the high-density zone and the low-density zone, and uniform air inlet of the annular connecting side wall is realized by arranging the third air holes with different densities.
Drawings
For a clearer description of the technical solutions of the present invention, the drawings that are needed in the description will be briefly introduced below, it being obvious that the drawings in the following description are one embodiment of the present invention, and that, without inventive effort, other drawings can be obtained by those skilled in the art from these drawings:
FIG. 1 is a schematic diagram of a semiconductor etching apparatus according to an embodiment of the present invention;
FIG. 2A is a top view of a first shower tray according to one embodiment of the present invention;
FIG. 2B is a top view of a first shower tray according to another embodiment of the present invention;
FIG. 2C is a top view of a first shower tray according to another embodiment of the present invention;
FIG. 2D is a top view of a first shower tray according to another embodiment of the present invention;
FIG. 3A is a side view of a gas supply assembly according to another embodiment of the present invention;
FIG. 3B is a side view of a gas supply assembly according to another embodiment of the present invention;
FIG. 3C is a side view of a gas supply assembly according to another embodiment of the present invention;
FIG. 4 is a side view of a first shower tray provided in accordance with another embodiment of the present invention;
FIG. 5 is a schematic view showing the structure of the gas supply assembly in the direction A-A' according to the present invention.
Detailed Description
The following provides a further detailed description of the proposed solution of the invention with reference to the accompanying drawings and detailed description. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for the purpose of facilitating and clearly aiding in the description of embodiments of the invention. For a better understanding of the invention with objects, features and advantages, refer to the drawings. It should be understood that the structures, proportions, sizes, etc. shown in the drawings are for illustration purposes only and should not be construed as limiting the invention to the extent that any modifications, changes in the proportions, or adjustments of the sizes of structures, proportions, or otherwise, used in the practice of the invention, are included in the spirit and scope of the invention which is otherwise, without departing from the spirit or essential characteristics thereof.
The present invention provides a gas supply assembly that may be used in a semiconductor etching apparatus. Fig. 1 illustrates a semiconductor etching apparatus provided according to an embodiment of the present invention.
As shown in fig. 1, the semiconductor etching apparatus includes an upper chamber cover, an electrode assembly, a gas supply assembly, a chamber, and an exhaust assembly (not shown). The semiconductor etching equipment can adopt the upper electrode radio frequency coil to excite the plasma or adopts remote plasma, and the electrode for generating the plasma is not limited. Wherein the remote plasma device 10 is used to energize the incoming process gas into a plasma. The gas supply assembly 12 includes a first shower tray 121 and a second shower tray 122 stacked one above the other with annular connecting sidewalls 123 therebetween. The gas supply assembly is fixed below the upper cavity cover 14, a first gas inlet 141 is arranged at the central position of the upper cavity cover, and the symmetrical center line Z of the gas supply assembly coincides with the symmetrical center line of the first gas inlet. The gas supply assembly is further provided with a second gas inlet 142 located between the first and second shower trays, and the direction of the second gas inlet is different from the direction of the first gas inlet. The first spraying disc is provided with a plurality of first air holes, and the second spraying disc is provided with a plurality of second air holes.
The chamber comprises a support base 16 and a liner 17, the support base is arranged in the chamber, the support base is used for placing a substrate W to be processed, the gas supply assembly is positioned right above the support base, and the symmetrical center line of the gas supply assembly coincides with the symmetrical center line of the support base. The liner 17 is disposed on an inner surface of a sidewall of the chamber and around the support base 16 for uniformly distributing the process gas on the surface of the substrate, and the process gas after the process treatment is exhausted out of the chamber. The support base further includes a plurality of lift pins 161, and the substrate is supported by the lift pins such that the substrate is separated from the support base so that the robot can take the substrate. The bottom of the supporting base is provided with a lifting device, so that the supporting base can move up and down. The chamber sidewall 18 is provided with an exhaust port that is coupled to an exhaust assembly, including a pump, for exhausting the process gas after processing out of the chamber. The chamber side wall is further provided with an inlet duct 19 for providing a second process gas to a second inlet of the gas supply assembly. The second process gas inlet pipeline is arranged on the side wall of the chamber, so that interference in the uncapping process can be effectively avoided.
In operation of the semiconductor etching apparatus, a nearly vacuum state is manufactured and maintained in the chamber by an exhaust assembly such as a pump. In this state, the process gas and plasma are uniformly supplied into the chamber through the gas supply unit. For example, in semiconductor processing, a substrate is typically fabricated from a silicon-based material, and the surface of the silicon substrate is naturally oxidized in air to form a dense SiO 2 layer, and some processes require removal of the SiO 2 layer from the surface of the silicon substrate prior to processing. At present, siO 2 on the surface of a substrate is usually removed by adopting a plasma etching mode, such as etching SiO 2 by adopting plasmas generated by HF and NH 3, HF, NH 3 and SiO 2 react to generate in the etching process (NH 4)2SiF6 can realize the removal of SiO 2. The plasmas can be generated by adopting a remote plasma source (Remote Plasma Source, RPS), wherein the remote plasma source is a device for exciting process gas to generate plasma and is specially used for providing activating gas and free radicals for a reaction chamber, and the activating gas and the free radicals enter the reaction chamber through a first air inlet to process the substrate in the process chamber because the plasma is generated in the reaction chamber of the remote plasma source.
The invention provides a gas supply assembly, which comprises a first spray disk 121, a first gas hole 25, a second spray disk and a first gas flow control device, wherein the first spray disk comprises a central circular area 21, an edge annular area 23 and a transition annular area 22 positioned between the central circular area and the edge annular area;
The second spraying disc 122 is provided with second air holes, the second air holes are formed along the thickness direction of the second spraying disc, and the first spraying disc and the second spraying disc are stacked up and down;
A first air inlet 141 located directly above the first shower tray 121;
The second air inlet 142 is located between the first spraying disc and the second spraying disc, and the air inlet direction of the second air inlet is different from the air inlet direction of the first air inlet.
As shown in fig. 2A to 2D, the first and second shower plates 121 and 122 are generally circular plates or disks. The first and second shower trays may be made of a transparent fused silica material or an opaque silica glass material. The gas supply assembly may also be made of any suitable material and coated with a transparent quartz material. The any material may be aluminum, aluminum alloys, steel, stainless steel, aluminum oxide, or other metals and alloys.
The air inlet direction refers to the direction of the process air flowing along the air inlet, specifically, the air inlet direction of the process air along the first air inlet is a vertical direction, the air inlet direction of the process air along the second air inlet is a horizontal direction, the air inlet direction of the first air inlet is perpendicular to the air inlet direction of the second air inlet, and further, the air inlet direction of the first air inlet and the air inlet direction of the second air inlet form a certain angle.
As shown in fig. 3A to 3C, the first shower tray 121 has a first surface 321 opposite to a second shower tray, and the first shower tray is provided with a third surface 322 opposite to the first surface. The second spray disk has a second surface 323 opposite the first spray disk, and the second spray disk is provided with a fourth surface 324 opposite the second surface.
The gas supply assembly provided by the invention comprises a first spray disc 121 positioned at the upper layer and a second spray disc 122 positioned at the lower layer, wherein a primary gas homogenizing space is formed between a third surface 322 of the first spray disc 121 opposite to the upper cavity cover and the lower surface of the upper cavity cover, and a secondary gas homogenizing space is formed between the first surface of the first spray disc 121 and a second surface 323 of the second spray disc. The first process gas or plasma enters the primary gas homogenizing space through the first gas inlet 141, and the primary gas homogenizing space can realize primary uniform mixing of the first process gas or plasma due to different gas concentrations near the first gas inlet 141 and far from the first gas inlet 141. Through the second air inlet 142 arranged between the first spray disk 121 and the second spray disk 122 and positioned on the side surface, the second air inlet 142 can be filled with the second process gas or the diluent gas, and through controlling the flow and the type of the second process gas or the diluent gas, the further uniform distribution of the process gas can be realized by utilizing the secondary gas homogenizing space, so that the uniformity of the surface plasma of the substrate is improved. In addition, since the plasma has a strong etching capability, the plasma may not only react with the substrate, but also erode the sidewall of the chamber of the semiconductor etching apparatus and the top wall of the upper chamber cover, for example, the upper chamber cover is made of aluminum material. By separately inputting different process gases or plasmas into the chamber, the plasma erosion of the lower surface of the upper chamber lid can be reduced.
In some embodiments, as shown in fig. 2A to 2D, the central circular region 21, the transition annular region 22 and the edge annular region 23 of the first spray disk are provided with first air holes 25, and the densities of the first air holes in the central circular region, the transition annular region and the edge annular region are different.
In some embodiments, the transition annular region 22 and the edge annular region 23 of the first shower tray are provided with first air holes 25, and the density of the first air holes in the transition annular region 22 is greater than that in the edge annular region 23.
As shown in fig. 2A and 3A, the central circular area 21 of the first shower plate 121 is not provided with the first gas holes 25, if the central circular area 21 is provided with the first gas holes 25, and the density and the aperture of the first gas holes are the same as those of the transition annular area and/or the edge annular area, when the first process gas passes through the first shower plate 121, since the first gas inlet 141 is located at the central position of the upper cavity cover, the gas concentration of the first process gas in the central circular area of the first surface 321 of the first shower plate 121 is greater than that in the area around the first surface of the first shower plate, and if the first gas holes 25 in the central circular area are not regulated, that is, the first gas holes are provided in the same as those in the transition annular area, that is, the edge annular area, even if the second shower plate is used for secondary gas homogenization, the process gas distribution on the surface of the substrate may be uneven, resulting in the situation that the intermediate etching rate of the substrate is fast, and the edge etching rate is slow.
The first gas hole density and pore size in the transition annular region 22 is greater than the first gas hole density and pore size in the edge annular region 23. In some embodiments, since the gas supply assembly further performs side gas intake through the third gas holes provided in the annular connecting sidewall, the gas concentration in the edge region of the secondary gas distribution space is greater than the gas concentration in the central region thereof, and the gas flow distribution in the secondary gas distribution space can be uniform by providing the first gas holes 25 in the transition annular region with a density greater than that of the first gas holes 25 in the edge annular region, so that the plasma has a uniform distribution on the substrate surface after flowing through the second gas holes 26. In addition, for side gas inlet, the flow rate of the gas in the edge annular region is high, the flow rate in the center circular region is low, and when the first gas holes are formed in the center circular region, the flow rate of the gas in the center circular region is low, so that the process gas entering from the first gas inlet and the process gas entering from the second gas inlet are mixed in the center circular region, and particle deposition is likely to be formed. The first process gas introduced into the first gas inlet 141 is NH3 and hydrogen, and the second process gas introduced into the second gas inlet 142 is a mixed gas of HF, helium and hydrogen. Through not arranging the through holes in the central circular area, the first process gas and the second process gas are mixed in the transition annular area and the edge annular area, and particle deposition can be avoided due to the fact that the gas flow rates in the transition annular area and the edge annular area are high.
In some embodiments, the central circular region and the transition annular region are provided with first gas holes, and the density of the first gas holes in the central circular region is smaller than that in the transition annular region.
As shown in fig. 2B and 3B, the edge annular region 23 of the first shower tray is not provided with first air holes 25. The first air holes 25 are arranged in the central circular area, but the density and the aperture of the first air holes 25 are far smaller than those of the first air holes in the transition annular area, and only a small amount of air flow can pass through the first air holes 25 in the central circular area, if the first air holes are not arranged in the central circular area of the first spray disk 121, as no air flow flows through the central area, after a period of etching process, products of the etching process are easily accumulated in the central circular area of the first surface of the first spray disk, and the accumulation of the products can cause poor heat dissipation of the central circular area, thereby affecting the uniformity of plasma distribution.
In some embodiments, the edge annular region is also provided with first air holes 25, the density of which is smaller in the edge annular region than in the transition annular region.
As shown in fig. 2C, the central circular area 21 and the edge annular area of the first spraying disc are provided with first air holes, and the density and/or the aperture of the first air holes are smaller than those of the first air holes in the transition annular area. Through the density and aperture adjustment to the first gas pocket in the different regions of first spray disk, can improve the gas distribution homogeneity of secondary even gas space.
In some embodiments, as shown in fig. 2D and 3C, the first air holes may be formed in the central circular region, instead of forming the first air holes 25 in the transition annular region, to increase the first air hole density and/or aperture in the edge annular region, and to increase the uniform distribution of the process gas or plasma in the secondary gas distribution space by the edge gas inlet of the first shower plate and the edge gas inlet of the second gas inlet.
In some embodiments, the first showerhead has a different first gas hole aperture in the central circular region, the transition annular region, and the edge annular region. In some embodiments, the first showerhead disk has a first gas hole aperture in the central circular region that is smaller than the first gas hole aperture in the transition annular region. The first air hole aperture of the first spray disk in the transition annular area is larger than the first air hole aperture of the first spray disk in the edge annular area.
In some embodiments, the first gas holes of the first shower tray central circular region, the transition annular region, and the edge annular region are arranged radially. The radial arrangement means that first air holes in different areas of the first spray disk are respectively arranged along the diameter or the radius direction.
In some embodiments, the first air holes of the first spray disk central circular region, the transition annular region, and the edge annular region are arranged circumferentially. The circumferential arrangement means that the first air holes on the first spray disk are distributed along a ring concentric with the first spray disk.
The specific distribution mode of the first air holes in the central circular area, the transition annular area and the edge annular area of the first spray disk is not limited. Specifically, the first gas hole distribution in the transition annular region and the edge annular region may also be provided with a dense region and a sparse region, and the distribution of the dense region and the sparse region is determined according to the etching rate map. In other words, the first air holes in each of the central circular region, the transition annular region, and the edge annular region of the first shower tray may also be unevenly distributed.
In some embodiments, the second air holes 26 of the second shower tray have the same aperture and the spacing between adjacent second air holes is the same. The same distance means that the distances between any two adjacent second air hole circles are the same.
In some embodiments, the minimum aperture of the first air holes 25 of the first spray tray is larger than the aperture of the second air holes 26 of the second spray tray, and the first air holes and the second air holes are arranged in a staggered manner. The staggered arrangement means that the opening position of the first air hole is not opposite to the opening position of the second air hole at all, namely, the process gas or plasma cannot directly flow through the first air hole and the second air hole from the first air inlet to reach the surface of the substrate.
In some embodiments, the thickness of the central circular region of the first shower tray is greater than the thickness of the edge annular region. As shown in fig. 4, the thickness of the central circular area of the first shower tray is D, and the thickness of the edge annular area is D, D > D. In the primary plenum, the pressure of the first process gas or plasma in the central circular region is higher than in the edge annular region. As the first process gas or plasma passes through the first gas hole, pressure loss is caused due to friction. In general, if the first air holes of the central circular region and the edge annular region have the same hole diameter, since the thickness D of the central circular region is greater than the thickness D of the edge annular region, the pressure loss of the first air holes of the central circular region is greater than the pressure loss of the first air holes of the edge annular region. Therefore, the uniformity of gas distribution can be adjusted by adjusting the thickness, the aperture and the density of the first air holes in different areas of the first spray disk.
In some embodiments, as shown in fig. 3A, the first spraying disc 121 has a first surface 321 opposite to the second spraying disc, the second spraying disc 122 has a second surface 323 opposite to the first spraying disc 121, an annular connecting sidewall 36 is disposed between the first surface 321 and the second surface 323 and is located at the edge of the first spraying disc and the second spraying disc, an upper surface of the annular connecting sidewall is connected to the first surface, a lower surface of the annular connecting sidewall is connected to the second surface, the upper surface and the lower surface are connected by an annular inner surface and an annular outer surface, and the annular connecting sidewall is provided with a third air hole 361, and the third air hole 361 is disposed along the thickness direction of the annular sidewall.
As shown in fig. 3C, the edge of the second spraying disc is provided with a mounting convex portion 40 higher than the second surface 323, the first spraying disc and the annular connecting side wall are integrally formed, the edge of the first spraying disc is provided with an annular extending portion 1211, the annular extending portion 1211 is connected with the side wall of the mounting convex portion 40, and the lower surface of the annular extending portion of the first spraying disc, the second surface of the second spraying disc, the annular outer surface of the annular connecting side wall and the side wall of the mounting convex portion form a first air homogenizing zone 30.
The installation convex part is annular, and the installation convex part and the second spraying disc are integrally formed. The first gas homogenizing zone 30 is an annular first gas homogenizing zone. The annular center of the first gas homogenizing zone is aligned with the center of the second spray disk.
The first spraying disk is provided with a first spraying disk main body, the first spraying disk main body comprises a central circular area, a transition annular area and an edge annular area, and the first spraying disk main body is provided with first air holes. The edge annular region of the first spray disk is provided with an annular extension 1211, which annular extension 1211 is not provided with an aperture, which annular extension is connected with the mounting boss of the second spray disk. The lower surface of annular extension is equipped with annular connection lateral wall, and first spraying dish is installed at the second surface 323 of second spraying dish through annular connection lateral wall, and annular connection lateral wall 36 and the junction that the second sprayed the dish is equipped with first seal 39, in other words, and first spraying dish is connected with the second spraying dish through annular connection lateral wall.
The second spray disk is provided with a mounting protrusion 40 above the second surface 323, which is also above the third surface 322 of the first spray disk, the second spray disk is connected with the upper chamber cover 14 by means of the mounting protrusion 40, and the connection of the mounting protrusion with the upper chamber cover is provided with a second sealing structure 38.
In some embodiments, the second air inlet 142 is located at a mounting boss of the second spray tray, and the second air inlet 142 communicates with the first plenum 30. The third air holes formed in the annular connecting side wall are provided with a high-density area and a low-density area, the low-density area is arranged close to the second air inlet area, and the high-density area is arranged far away from the second air inlet area.
As shown in fig. 5, the mounting boss 40 is provided with a second air inlet 142 which communicates with the air inlet duct 19 of the chamber side wall for supplying air to the second air inlet of the gas supply assembly through the air inlet duct 19.
When the second process gas enters the first gas distribution region through the second gas inlet 142, the gas flow concentration near the second gas inlet is greater than the gas flow concentration far from the second gas inlet, so that the third gas holes formed in the annular connecting side wall have a high-density region and a low-density region, the low-density region is arranged near the second gas inlet region, and the high-density region is arranged far from the second gas inlet region. The uniformity of the intake air from the third air hole can be improved. Further, a plurality of second air inlets may be provided at the mounting protrusion 40 of the second shower tray, and the number of further second air inlets may be 3, and the second air inlets are uniformly distributed on the circumference.
Further, the shape of the opening of the third air intake hole is not limited, and may be circular, elliptical, square, etc., preferably circular. The aperture of the third air inlet hole is not limited, and can be larger than the second air inlet hole or smaller than the second air inlet hole.
The thickness range of the first gas spraying disc and the second gas spraying disc is 1-50 mm. The distance between the first surface 321 of the first spray tray and the second surface 323 of the second spray tray is in the range of 3-10 mm.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element. In addition, the term "connected" herein means that A and B are directly connected, or that A and B are indirectly connected, such as A and B are connected by C, even by C and D, etc., and that A and B are connected either integrally, separately, detachably, or fixedly. The term "optional" in this context means that the technical feature may be combined with or without any feature herein.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (18)
1. A gas supply assembly, comprising:
The first spray disk comprises a central circular area, an edge annular area and a transition annular area positioned between the central circular area and the edge annular area, wherein the first spray disk is provided with first air holes which are arranged along the thickness direction of the first spray disk;
The second spraying disc is provided with second air holes, the second air holes are formed along the thickness direction of the second spraying disc, and the first spraying disc and the second spraying disc are stacked up and down;
the first air inlet is positioned right above the first spray disc;
the second air inlet is positioned between the first spraying disc and the second spraying disc, and the air inlet direction of the second air inlet is different from the air inlet direction of the first air inlet.
2. A gas supply assembly according to claim 1, wherein the central circular region, the transition annular region and the edge annular region of the first shower tray are each provided with first gas holes, and the densities of the first gas holes in the central circular region, the transition annular region and the edge annular region are different.
3. A gas supply assembly as claimed in claim 1, wherein the transition annular region and the edge annular region of the first shower tray are provided with first gas holes, the density of the first gas holes in the transition annular region being greater than the density of the first gas holes in the edge annular region.
4. A gas supply assembly as claimed in claim 1, wherein the central circular region and the transition annular region of the first shower plate are provided with first gas holes, the density of the first gas holes in the central circular region being less than the density of the first gas holes in the transition annular region.
5. A gas supply assembly as recited in claim 4, wherein the first shower plate is also provided with first gas holes in an edge annular region, the first gas holes being less dense in the edge annular region than in the transition annular region.
6. A gas supply assembly as recited in claim 1, wherein the first shower plate has different first gas hole apertures in the central circular region, the transition annular region, and the edge annular region.
7. A gas supply assembly as recited in claim 6, wherein the first showerhead plate has a first gas hole aperture in the central circular region that is smaller than the first gas hole aperture in the transition annular region.
8. A gas supply assembly as recited in claim 7, wherein the first shower plate has a first gas hole aperture in the transition annular region that is larger than a first gas hole aperture in the edge annular region.
9. A gas supply assembly according to claim 5 or 8, wherein the first gas holes of the first shower plate central circular region, the transition annular region and the edge annular region are arranged radially.
10. A gas supply assembly according to claim 5 or 8, wherein the first gas holes of the central circular region, the transition annular region and the edge annular region of the first shower tray are circumferentially arranged.
11. A gas supply assembly according to claim 1, wherein the second gas holes of the second shower plate have the same diameter and the spacing between adjacent second gas holes is the same.
12. A gas supply assembly according to claim 11 wherein the first shower plate first gas holes have a smaller diameter than the second shower plate second gas holes, the first and second gas holes being offset.
13. A gas supply assembly according to claim 1, wherein the thickness of the central circular region of the first shower plate is greater than the thickness of the peripheral annular region.
14. The gas supply assembly according to claim 1, wherein the first shower plate has a first surface opposite to a second shower plate, the second shower plate has a second surface opposite to the first shower plate, an annular connecting sidewall is provided between the first surface and the second surface, the annular connecting sidewall is located at edges of the first shower plate and the second shower plate, an upper surface of the annular connecting sidewall is connected to the first surface, a lower surface of the annular connecting sidewall is connected to the second surface, and the annular connecting sidewall is provided with a third gas hole, the third gas hole being provided in a thickness direction of the annular connecting sidewall.
15. The gas supply assembly of claim 14, wherein the second shower plate edge is provided with a mounting boss above the second surface of the second shower plate, the first shower plate is integrally formed with the annular connecting sidewall, the first shower plate edge is provided with an annular extension connected with the sidewall of the mounting boss, and the lower surface of the annular extension of the first shower plate, the second surface of the second shower plate, the annular connecting sidewall, and the sidewall of the mounting boss form a first plenum.
16. A gas supply assembly according to claim 1 wherein the second gas inlet is located at a mounting boss of a second shower plate, the second gas inlet communicating with the first plenum.
17. A gas supply assembly according to claim 16, wherein the third gas holes formed in the annular connecting sidewall have a high density region and a low density region, the low density region being disposed proximate the second gas inlet region and the high density region being disposed distal the second gas inlet region.
18. A semiconductor etching apparatus, characterized by comprising,
The upper cavity cover is provided with a first air inlet at the central position, and the air supply assembly according to any one of claims 1-17 is fixed on the upper cavity cover and is positioned right below the first air inlet;
The upper cavity cover is positioned above the cavity, a supporting base is arranged in the cavity, the gas supply assembly is positioned right above the supporting base, and the center of the gas supply assembly is aligned with the center of the supporting base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411776631.2A CN119480716A (en) | 2024-12-04 | 2024-12-04 | Gas supply assembly and semiconductor etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411776631.2A CN119480716A (en) | 2024-12-04 | 2024-12-04 | Gas supply assembly and semiconductor etching equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN119480716A true CN119480716A (en) | 2025-02-18 |
Family
ID=94581594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202411776631.2A Pending CN119480716A (en) | 2024-12-04 | 2024-12-04 | Gas supply assembly and semiconductor etching equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN119480716A (en) |
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2024
- 2024-12-04 CN CN202411776631.2A patent/CN119480716A/en active Pending
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