CN119451163A - GaN HEMT based on superlattice back barrier structure and preparation method thereof - Google Patents
GaN HEMT based on superlattice back barrier structure and preparation method thereof Download PDFInfo
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- 230000004888 barrier function Effects 0.000 title claims abstract description 119
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000009830 intercalation Methods 0.000 claims abstract description 15
- 230000002687 intercalation Effects 0.000 claims abstract description 15
- 230000006911 nucleation Effects 0.000 claims abstract description 15
- 238000010899 nucleation Methods 0.000 claims abstract description 15
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000005234 chemical deposition Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 239000007791 liquid phase Substances 0.000 claims description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 12
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 185
- 229910002601 GaN Inorganic materials 0.000 description 129
- 238000010586 diagram Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 230000005533 two-dimensional electron gas Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000670 limiting effect Effects 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The invention relates to a GaN HEMT based on superlattice back barrier structure and a preparation method thereof, belonging to the technical field of microelectronics, comprising a substrate, an AlN nucleation layer, a GaN buffer layer, an InGaN/GaN superlattice back barrier layer, a GaN channel layer, an AlN intercalation layer, an AlGaN barrier layer and a GaN cap layer from bottom to top, a drain electrode and a source electrode are respectively arranged at two ends above the GaN channel layer, a gate electrode is arranged above a GaN cap layer close to the source electrode, and a SiN passivation layer is arranged between the drain electrode and the source electrode above the GaN cap layer. The superlattice structure formed by InGaN and GaN is used as the back barrier layer, so that electric leakage can be restrained, the energy band is obviously lifted, and the breakdown characteristic of the HEMT device is improved.
Description
Technical Field
The invention relates to a GaN HEMT based on a superlattice back barrier structure and a preparation method thereof, belonging to the technical field of microelectronics.
Background
The development of silicon-based power devices has become increasingly mature, and the performance approaches the physical limits of the materials. The limitation of the material performance becomes a key factor for restricting the further improvement of the performance of the silicon-based power device. The third generation semiconductor materials represented by gallium nitride are becoming a research hot spot of new generation power devices due to their excellent characteristics of wide band gap, high critical breakdown field strength, low dielectric constant, etc.
AlGaN/GaN HEMT devices benefit from their unique heterojunction structure and material properties, the ability to form two-dimensional electron gas to achieve higher channel mobility and their own large critical breakdown field strength, which make their application in the high power switching field very attractive. However, the commercialization of the GaNHEMT device is mainly implemented in the field of medium-low voltage power devices, and is mainly limited by the reasons of fringe electric field concentration effect, leakage current and the like, so that breakdown occurs in advance when the voltage resistance of the device is far less than the theoretical limit of the material.
In the past researches, in order to inhibit the leakage of devices and improve the withstand voltage of the devices, the growth process of epitaxial materials is optimized, the quality of the materials is improved or specific epitaxial layers and other technologies are introduced, such as an InGaN back barrier layer is introduced, but In order to prevent the precipitation of In components, the InGaN back barrier layer cannot grow very thick, so that the leakage of the devices is limited.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a GaN HEMT based on a superlattice back barrier structure and a preparation method thereof, and the superlattice structure formed by InGaN and GaN is used as a back barrier layer, so that electric leakage can be inhibited, an energy band can be obviously lifted, and the breakdown characteristic of an HEMT device can be improved.
The invention adopts the following technical scheme:
The GaN HEMT based on the superlattice back barrier structure comprises a substrate, an AlN nucleation layer, a GaN buffer layer, an InGaN/GaN superlattice back barrier layer, a GaN channel layer, an AlN intercalation layer, an AlGaN barrier layer and a GaN cap layer from bottom to top in sequence, wherein a drain electrode and a source electrode are respectively arranged at two ends above the GaN channel layer, a gate electrode is arranged above the GaN cap layer close to the source electrode, and a SiN passivation layer is arranged between the drain electrode and the source electrode above the GaN cap layer.
Preferably, the substrate is one of Si, siC, al 2O3, preferably a SiC substrate, wherein the Si substrate is produced by a relatively mature process, at a low cost but with poor quality of GaN due to a large lattice mismatch with GaN, with excellent quality but expensive quality of epitaxially grown crystals, and the Al 2O3 substrate is interposed between them.
The AlN nucleation layer has a thickness of 5-1000 nm, the AlN nucleation layer can reduce the lattice mismatch problem between the GaN buffer layer and the substrate, the crystal quality is improved, and the AlN nucleation layer preferably has a thickness of 100 nm.
The thickness of the GaN buffer layer is 0.1-20 μm, preferably, the thickness of the GaN buffer layer is 1.5 μm;
preferably, the In mass percent of the InGaN/GaN superlattice back barrier layer is 1% -40%. Further preferably, the InGaN/GaN superlattice back barrier layer has an In mass percentage of 5%.
Preferably, the total thickness of the InGaN/GaN superlattice back barrier layer is 5-500 nm, wherein the thickness of the InGaN layer is 1-10 nm, and the thickness of the GaN layer is 1-30 nm.
Preferably, the total thickness of the InGaN/GaN superlattice back barrier layer is 30nm, wherein the thickness of the InGaN layer is 1nm, the thickness of the GaN layer is 5nm, and the cycle period of the InGaN layer and the GaN layer is 5.
In the material growth process, in order to prevent the In from precipitating out of the too thick InGaN layer which cannot be grown, and the InGaN layer has strong polarization, a higher potential barrier can be obtained by a thinner InGaN layer. Secondary channel potential wells (primary channel potential wells formed at the interface of the AlGaN barrier layer and the GaN channel layer) may be formed at the interface of InGaN and GaN when the InGaN layer is interposed, the formation of the secondary channel potential wells may reduce the ability of the gate to control channel two-dimensional electron gas under high drain bias, while thinner InGaN may inhibit the formation of secondary channels. The thickness of the GaN layer is not too thick, and the too thick layer can lead to the overlarge distance between two adjacent layers of InGaN, so that the gas limitation of two-dimensional electrons is weakened. And In order to prevent the In component from being separated out, the GaN growth temperature is low, the quality of GaN crystal is deteriorated, and it is not suitable for thick growth.
The superlattice structure is formed when the cycle period of the InGaN layer and the GaN layer is more than 1, and the band lifting effect can be increased by multiple times of cycle growth. However, as can be seen in connection with fig. 11, the limiting effect on electrons after 5 cycles is already more pronounced and the increase in cycle period is continued to be less productive. And because of the low temperature alternate growth of two different materials, inGaN and GaN, excessive cycling may lead to poor crystal quality.
Preferably, the thickness of the GaN channel layer is 5-50 nm, and preferably, the thickness of the GaN channel layer is 10 nm;
the thickness of the AlN intercalation is 0.2-10 nm, and preferably, the thickness of the AlN intercalation is 1 nm;
the Al mass percentage of the AlGaN barrier layer is 5% -30%, more preferably, the Al mass percentage of the AlGaN barrier layer is 20%, and the thickness of the AlGaN barrier layer is 5-40 nm, preferably, 20 nm.
Preferably, the thickness of the GaN cap layer is 0-100 nm, preferably 2 nm;
The drain electrode and the source electrode are made of Ti/Al/Ni/Au electrodes, and the gate electrode is made of Ni/Au electrodes;
The SiN passivation layer has a thickness of 10-3000 nm, preferably 200 nm a.
The InGaN/GaN superlattice layer structure is grown between the channel layer and the buffer layer, and potential barriers are formed through the polarization action of the InGaN and the GaN, so that energy bands are lifted, the limiting field of two-dimensional electron gas is enhanced, and the breakdown voltage of the device is improved.
The preparation method of the GaN HEMT based on the superlattice back barrier structure comprises the following steps:
s1, sequentially epitaxially growing an AlN nucleation layer, a GaN buffer layer, an InGaN/GaN superlattice back barrier layer, a GaN channel layer, an AlN intercalation layer, an AlGaN barrier layer and a GaN cap layer on a substrate;
s2, removing a GaN cap layer, an AlGaN barrier layer and an AlN intercalation layer below the drain electrode and the source electrode through ICP etching until reaching the top of the GaN channel layer to form a drain electrode and a source electrode region;
s3, evaporating metal Ti/Al/Ni/Au in the drain electrode and source electrode areas, and annealing to form ohmic contact;
S4, evaporating metal Ni/Au on the gate electrode area above the GaN cap layer to form Schottky contact;
And S5, growing a SiN passivation layer between the source electrode and the drain electrode above the GaN cap layer.
Preferably, in the step S3, the method for evaporating metal Ti/Al/Ni/Au is an electron beam evaporation or magnetron sputtering technology, the annealing temperature is 700-1000 ℃ and the annealing time is 20-600S, and further, the method for evaporating metal Ti/Al/Ni/Au is a magnetron sputtering technology, and the annealing condition is that the annealing is 40S at 850 ℃ in N 2.
Preferably, in step S1, the epitaxial growth method is a liquid phase epitaxial growth method (LPE), a metal organic chemical vapor deposition Method (MOCVD), or a molecular beam epitaxy Method (MBE), preferably a metal organic chemical vapor deposition Method (MOCVD);
in step S5, the SiN passivation layer is grown by Low Pressure Chemical Vapor Deposition (LPCVD), plasma enhanced chemical deposition (PECVD), or Atomic Layer Deposition (ALD).
The invention is not exhaustive and can be seen in the prior art.
The beneficial effects of the invention are as follows:
1. Greater band lifting
When InGaN material has a narrower forbidden bandwidth than GaN, the InGaN back barrier layer and the underlying GaN buffer layer have a significantly increased energy band due to the effect of the polarization electric field that tilts the energy band when InGaN is In a compressive strain state, and when InGaN back barrier layer is used as the back barrier layer, the InGaN back barrier layer is usually grown to be very thin and not more than 10nm In order to prevent In precipitation, so the effect of raising the energy band of the buffer layer is limited. The superlattice structure is formed by alternately growing InGaN and GaN, and higher energy band lifting can be realized by growing multiple layers of InGaN.
2. Higher breakdown voltage
The energy band of the buffer layer is raised due to the fact that the energy band of the buffer layer is raised by the introduction of the InGaN/GaN superlattice back barrier layer, the limitation of two-dimensional electron gas (2 DEG) is enhanced, the diffusion of the two-dimensional electron gas to the buffer layer is restrained under the off state of the device, the leakage current of the buffer layer is weakened, the withstand voltage of the device is improved, and the device has higher breakdown voltage.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application.
FIG. 1 is a schematic view of a substrate of the present invention;
FIG. 2 is a schematic diagram of a device structure obtained in step S1 of the present invention;
FIG. 3 is a schematic diagram of a device structure obtained in step S2 of the present invention;
FIG. 4 is a schematic diagram of a device structure obtained in step S3 of the present invention;
FIG. 5 is a schematic diagram of the device structure obtained in step S4 of the present invention;
fig. 6 is a schematic diagram of a GaN HEMT structure based on a superlattice back barrier structure obtained in step S5 in the present invention;
Fig. 7 is a schematic diagram of an InGaN/GaN superlattice back barrier layer in accordance with an embodiment of the invention;
Fig. 8 is a schematic diagram of breakdown images of a non-back barrier HEMT device, a single layer InGaN back barrier HEMT device, and an InGaN/GaN superlattice back barrier HEMT device;
Fig. 9 is an image of electron concentration distribution in the off state of a HEMT device without a back barrier layer;
Fig. 10 is an image of electron concentration distribution in an off state of a single InGaN back barrier HEMT device;
fig. 11 is an image of electron concentration distribution in an off state of an InGaN/GaN superlattice back barrier layer HEMT device according to an embodiment of the invention;
fig. 12 is a schematic diagram of energy band images of a non-back barrier HEMT device, a single layer InGaN back barrier HEMT device, and an InGaN/GaN superlattice back barrier HEMT device;
In the figure, a 1-substrate, a 2-AlN nucleation layer, a 3-GaN buffer layer, a 4-InGaN/GaN superlattice back barrier layer, a 5-GaN channel layer, a 6-AlN intercalation layer, a 7-AlGaN barrier layer, an 8-GaN cap layer, a 9-SiN passivation layer, a 10-drain electrode, an 11-source electrode and a 12-gate electrode.
Detailed Description
In order to better understand the technical solutions in the present specification, the following description will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the implementation of the present specification, but not limited thereto, and the present invention is not fully described and is according to the conventional technology in the art.
Example 1
The GaN HEMT based on the superlattice back barrier structure comprises a substrate 1, an AlN nucleation layer 2, a GaN buffer layer 3, an InGaN/GaN superlattice back barrier layer 4, a GaN channel layer 5, an AlN intercalation layer 6, an AlGaN barrier layer 7 and a GaN cap layer 8 from bottom to top, wherein a drain electrode 10 and a source electrode 11 are respectively arranged at two ends above the GaN channel layer 5, a gate electrode 12 is arranged above the GaN cap layer 8 close to the source electrode 11, and a SiN passivation layer 9 is arranged between the drain electrode and the source electrode above the GaN cap layer 8.
The substrate 1 is a SiC substrate, and the AlN nucleation layer 2 has a thickness of 100 nm.
The thickness of the GaN buffer layer 3 was 1.5. Mu.m;
The In mass percentage of the InGaN/GaN superlattice back barrier layer 4 is 5%.
The total thickness of the InGaN/GaN superlattice back barrier layer 4 was 30nm, in which the thickness of the InGaN layer was 1nm, the thickness of the GaN layer was 5nm, and the cycle period of the InGaN layer and the GaN layer was 5, as shown in fig. 7.
In the material growth process, in order to prevent the In from precipitating out of the too thick InGaN layer which cannot be grown, and the InGaN layer has strong polarization, a higher potential barrier can be obtained by a thinner InGaN layer. Secondary channel potential wells (primary channel potential wells formed at the interface of the AlGaN barrier layer and the GaN channel layer) may be formed at the interface of InGaN and GaN when the InGaN layer is interposed, the formation of the secondary channel potential wells may reduce the ability of the gate to control channel two-dimensional electron gas under high drain bias, while thinner InGaN may inhibit the formation of secondary channels. The thickness of the GaN layer is not too thick, and the too thick layer can lead to the overlarge distance between two adjacent layers of InGaN, so that the gas limitation of two-dimensional electrons is weakened. And In order to prevent the In component from being separated out, the GaN growth temperature is low, the quality of GaN crystal is deteriorated, and it is not suitable for thick growth.
The superlattice structure is formed when the cycle period of the InGaN layer and the GaN layer is more than 1, and the band lifting effect can be increased by multiple times of cycle growth. However, as can be seen in connection with fig. 11, the limiting effect on electrons after 5 cycles is already more pronounced and the increase in cycle period is continued to be less productive. And because of the low temperature alternate growth of two different materials, inGaN and GaN, excessive cycling may lead to poor crystal quality.
The thickness of the GaN channel layer 5 is 10 nm;
The thickness of AlN intercalation 6 is 1 nm;
the Al mass percentage of the AlGaN barrier layer 7 is 20 percent, and the thickness of the AlGaN barrier layer 7 is 20 nm;
The thickness of the GaN cap layer 8 is 2 nm;
The materials of the drain electrode 10 and the source electrode 11 are Ti/Al/Ni/Au electrodes, and the materials of the gate electrode 12 are Ni/Au electrodes;
the SiN passivation layer 9 has a thickness of 200 nm a.
Example 2
A GaN HEMT based on a superlattice back barrier structure as described in example 1, except that AlN nucleation layer 2 has a thickness of 5 nm a.
Example 3
A GaN HEMT based on a superlattice back barrier structure as described in example 1, except that AlN nucleation layer 2 has a thickness of 1000 nm a.
Example 4
A GaN HEMT based on a superlattice back barrier structure, as described in example 1, except that the GaN buffer layer 3 has a thickness of 0.1 μm.
Example 5
A GaN HEMT based on a superlattice back barrier structure, as described in example 1, except that the GaN buffer layer 3 has a thickness of 20 μm.
Example 6
A GaN HEMT based on a superlattice back barrier structure is described In example 1, except that the InGaN/GaN superlattice back barrier layer 4 has an In mass percentage of 1%.
Example 7
A GaN HEMT based on a superlattice back barrier structure is described In example 1, except that the InGaN/GaN superlattice back barrier layer 4 has an In mass percentage of 40%.
Example 8
A GaN HEMT based on a superlattice back barrier structure is described in example 1, except that the total thickness of the InGaN/GaN superlattice back barrier layer 4 is 6nm, wherein the InGaN layer thickness is 1nm and the GaN layer thickness is 2nm.
Example 9
A GaN HEMT based on a superlattice back barrier structure is described in example 1, except that the total thickness of the InGaN/GaN superlattice back barrier layer 4 is 500nm, wherein the InGaN layer thickness is 2nm and the GaN layer thickness is 8nm.
Example 10
A GaN HEMT based on a superlattice back barrier structure is different from that of embodiment 1 in that the GaN channel layer 5 has a thickness of 5 nm.
Example 11
A GaN HEMT based on a superlattice back barrier structure is as described in example 1, except that the GaN channel layer 5 has a thickness of 50 nm a.
Example 12
A GaN HEMT based on a superlattice back barrier structure as described in example 1, except that the AlN interlayer 6 has a thickness of 0.2 nm a.
Example 13
A GaN HEMT based on a superlattice back barrier structure as described in example 1, except that the AlN interlayer 6 has a thickness of 10 nm a.
Example 14
A GaN HEMT based on a superlattice back barrier structure as described in example 1, except that the GaN cap layer 8 has a thickness of 100 nm a.
Example 15
A GaN HEMT based on a superlattice back barrier structure as described in example 1, except that the SiN passivation layer 9 has a thickness of 10 nm a.
Example 16
A GaN HEMT based on a superlattice back barrier structure as described in example 1, except that the SiN passivation layer 9 has a thickness of 3000 nm a.
Example 17
The preparation method of the GaN HEMT based on the superlattice back barrier structure in embodiment 1 comprises the following steps:
S1, sequentially epitaxially growing an AlN nucleation layer 2, a GaN buffer layer 3, an InGaN/GaN superlattice back barrier layer 4, a GaN channel layer 5, an AlN intercalation layer 6, an AlGaN barrier layer 7 and a GaN cap layer 8 on a substrate 1 by adopting an MOCVD method;
S2, removing the GaN cap layer 8, the AlGaN barrier layer 7 and the AlN intercalation layer 6 below the drain electrode and the source electrode through ICP etching until reaching the top of the GaN channel layer 5 to form a drain electrode 10 and a source electrode 11 region;
s3, evaporating metal Ti/Al/Ni/Au in the drain electrode and source electrode areas, and annealing to form ohmic contact, wherein the method for evaporating metal Ti/Al/Ni/Au is a magnetron sputtering technology, and the annealing condition is that annealing is performed at 850 ℃ in N 2 for 40S;
s4, evaporating metal Ni/Au on the gate electrode 12 area above the GaN cap layer 8 to form Schottky contact;
And S5, growing a SiN passivation layer 9 between the source electrode 11 and the drain electrode 10 above the GaN cap layer 8 by a plasma enhanced chemical deposition (PECVD) method.
Comparative example 1
A HEMT device without a back barrier layer is characterized in that a GaN channel layer is directly grown on a GaN buffer layer, an InGaN/GaN superlattice back barrier layer is not present, and other structures are the same as in the embodiment 1.
Comparative example 2
A single-layer InGaN back barrier layer HEMT device has only one InGaN layer in the back barrier layer, no GaN layer, and other structures are the same as those in embodiment 1.
Fig. 8 is a graph showing the breakdown images of the non-back barrier layer HEMT device of comparative example 1, the single-layer InGaN back barrier layer HEMT device of comparative example 2, and the InGaN/GaN superlattice back barrier layer HEMT device of example 1, in fig. 8, the abscissa is the drain voltage, and the ordinate is the source-drain current, wherein the drain voltage corresponding to the abrupt change of the source-drain current is the breakdown voltage of the device, and it can be observed that the abrupt change of the source-drain current of the InGaN/GaN superlattice back barrier layer HEMT device occurs at the latest along with the rise of the drain voltage, which indicates that the breakdown voltage is higher than that of the non-back barrier layer HEMT device and the single-layer InGaN back barrier layer HEMT device.
Fig. 9 to 11 are electron concentration distribution patterns in the off state of the non-back barrier layer HEMT device of comparative example 1, the single-layer InGaN back barrier layer HEMT device of comparative example 2, and the InGaN/GaN superlattice back barrier layer HEMT device of example 1, respectively, in which the dark portion is the electron distribution of the channel region, it can be found that the width of the dark region of the InGaN/GaN superlattice back barrier layer HEMT device of example 1 is the narrowest, because electrons are limited by the superlattice back barrier layer, and diffusion of electrons at the channel to the buffer layer is suppressed. The InGaN/GaN superlattice back barrier layer has obvious effect of lifting the energy band of the barrier layer and plays a role of limiting the two-dimensional electron gas.
Fig. 12 is a schematic diagram of energy band images of the non-back barrier layer HEMT device of comparative example 1, the single layer InGaN back barrier layer HEMT device of comparative example 2, and the InGaN/GaN superlattice back barrier layer HEMT device of example 1, wherein the dashed line represents the fermi level, in which the fermi level can be considered as a hypothetical level that is occupied by 50% probability when the thermodynamics are balanced, the state above the fermi level is generally considered as empty, the state below the fermi level is generally considered as filled by electrons, the abscissa is the longitudinal distance, and the energy band energy of the InGaN/GaN superlattice back barrier layer HEMT device is higher than that of the non-back barrier layer HEMT device and the single layer InGaN back barrier layer HEMT device, which means that the introduction of the InGaN/GaN superlattice back barrier layer causes the device buffer layer energy band to be raised.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the present invention.
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| YACHAO ZHANG ET AL: "High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier", 《APPLIED PHYSICS LETTERS》, vol. 115, no. 7, 13 August 2019 (2019-08-13), pages 1 - 5, XP012239848, DOI: 10.1063/1.5102080 * |
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