CN1194376C - Microprobe Fabrication Method - Google Patents

Abstract

A method for manufacturing a microprobe includes forming an oxide layer on a first surface of a silicon substrate having a first surface and a second surface, forming a first contact hole and a second contact hole in the oxide layer, forming a conductive layer on the first contact hole, the second contact hole and the entire surface, clamping the substrate with a clamp, and etching the second surface of the silicon substrate with the clamp as an etching mask until the conductive layer is exposed to obtain a microprobe structure.

Description

Microprobe Fabrication Method

technical field

The invention relates to a manufacturing method of a microprobe.

technical background

With the gradual miniaturization of semiconductor circuits, the currently used probes are too thick, and there will be serious problems when probing a small contact (0.5um). As shown in Figure 1, it is the structure of a traditional microprobe device, wherein the needle part 71 of the microprobe is to connect a connection part 72 to a base 73, and the above-mentioned base is coupled with a detection system 74; the above-mentioned detection system 74 is the result of electrical measurement by touching the needle part of the above-mentioned microprobe to the circuit on the wafer through the above-mentioned base that can move up and down, left and right, and it can be known whether the components on the wafer are normal , but with the gradual miniaturization of semiconductor circuits, the needle portion 71 of the above-mentioned micro-probe can no longer meet the demand, so many people spend a lot of time to manufacture a suitable micro-probe, but so far , there is no efficient way to fabricate microprobes.

Contents of the invention

In view of this, an object of the present invention is to provide a method of manufacturing a microprobe, which can effectively manufacture a microprobe with a relatively small size. The steps include: first, forming an oxide layer on a surface having a first surface and a On the above-mentioned first surface of a silicon substrate on the second surface, then, form a first contact hole and a second contact hole in the above-mentioned oxide layer, wherein the above-mentioned second contact hole is smaller than the first contact hole, and then form a conductive Layer on the above-mentioned first contact hole, second contact hole and the entire surface. Finally, use a jig to clamp the substrate, and use the above-mentioned jig as an etching mask to etch the above-mentioned second surface of the above-mentioned silicon substrate until it is exposed. above the conductive layer to obtain a microprobe structure.

Through the method of the present invention, a probe suitable for a contact point below 0.5um can be manufactured, and it can be successfully connected with a micromachine to perform the detection function.

Description of drawings

FIG. 1 is a cross-sectional view showing the manufacturing process of the first embodiment of the present invention.

2a-2h are sectional views of the manufacturing process of the first embodiment of the present invention, wherein FIG. 2d is a top view of the conductive layer in the embodiment.

3a-3i are sectional views of the process of the second embodiment of the present invention, wherein FIG. 3d is a top view of the conductive layer in the embodiment.

Symbol Description

10. 310: silicon substrate;

101, 3101: first surface;

102, 3102: second surface;

20, 320: oxide layer;

30a, 30b, 30c, 330a, 330b, 330c: photoresist patterns;

201, 3201: the first contact hole;

202, 3202: second contact hole;

40, 340: conductive layer;

401, 341: the second conductive layer;

50, 350: fixture;

401: protrusion;

71: needle part;

73: base;

74: detection system;

351, 352: Plugs.

Detailed ways

Hereinafter, an embodiment of manufacturing a microprobe according to the present invention will be described with reference to the drawings.

First embodiment:

First, referring to FIG. 2a, an oxide layer 20 is formed on the above-mentioned first surface 101 of a silicon substrate 10 having a first surface 101 and a second surface 102. For example, the thickness of the above-mentioned oxide layer is about 1 micron Silicon oxide, silicon nitride or silicon hydroxide. Next, with reference to FIG. 2b, steps such as coating photoresist material, exposure, development, and baking are performed using lithography technology to form photoresist patterns 30a, 30b, and 30c for contact hole etching. Through the above photoresist pattern 30a , 30b and 30c are used as etching masks to etch the above-mentioned oxide layer 20 to form a first contact hole 201 and a second contact hole 202 in the above-mentioned oxide layer 20, because they are filled in the above-mentioned second contact hole 202 in subsequent steps The conductor will be the needle part of the microprobe, so the above-mentioned second contact hole 202 formed must be smaller than the above-mentioned first contact hole 201, preferably 0.13um or the smallest size that can be achieved by etching technology. Then, the photoresist masks 30a, 30b and 30c are removed.

Next, a conductive layer 40 is formed on the first contact hole 201, the second contact hole 202 and the entire surface, as shown in FIG. 2c. In addition, as shown in Figure 2e, the above-mentioned conductive layer 40 preferably further includes at least one second conductive layer 401, which is formed on the above-mentioned conductive layer 40 in a structure that changes from narrow to wide layer by layer, wherein in Figure 2d is the above-mentioned conductive layer 401. The top view of the layer 410 is used to prevent the final microprobe from sagging due to gravity, and the above-mentioned conductive layer can be made of aluminum, tungsten or other conductive materials.

Then, the substrate 10 is clamped using a clamp 50 as shown in FIG. 2f. Next, as shown in FIGS. 2g and 2h , the second surface 102 of the silicon substrate 10 is etched using the jig 50 as an etching mask until the conductive layer 40 is exposed. For example, plasma etching is used to remove the exposed sand substrate 10 not covered by the jig 50, as shown in FIG. 2g. Etch above-mentioned oxide layer 20 again, until exposing above-mentioned conductive layer 40, cause a groove; As shown in Fig. The needle part 71 in 1. Of course, the etching step may further include forming a photoresist on the second surface 102 of the silicon substrate 10 to serve as an etching mask in the subsequent etching step. In addition, the above-mentioned fixture 50 is just like the base 73 in FIG. 1, and can be coupled with a detection system to conduct electrical measurements on the components on the wafer. Through the generated results, it can be known whether the components on the wafer are normal.

Wherein, in the step of etching the silicon substrate and the above-mentioned oxide layer, both dry etching is used, or the silicon substrate is dry-etched and the above-mentioned oxide layer is wet-etched or dry-etched.

Second embodiment:

First, referring to FIG. 3 a, an oxide layer 320 is formed on the first surface 3101 of a silicon substrate 310 having a first surface 3101 and a second surface 3102, wherein the oxide layer is silicon oxide, silicon nitride or hydrogen Made of silicon oxide. Next, with reference to FIG. 3b, steps such as coating photoresist material, exposure, development, and baking are performed using lithography technology to form photoresist patterns 330a, 330b, and 330c for contact hole etching. Through the above photoresist patterns 330a, 330b and 330c are used as etching masks to etch the above-mentioned oxide layer 320 to form a first contact hole 3201 and a second contact hole 3202 in the above-mentioned oxide layer 320. The conductor will be the needle part of the microprobe, so the formed second contact hole 3202 must be smaller than the first contact hole 3201, preferably 0.13um or the smallest size that can be achieved by etching technology. Then, the photoresist masks 330a, 330b and 330c are removed.

Next, as shown in FIG. 3c, a first conductive material is filled to form two plugs 351, 352 in the first contact hole 3201 and the second contact hole 3202, wherein the first conductive material can be aluminum, The conductive material of metal such as tungsten or polycrystalline silicon, for example, the above-mentioned first conductive material in this embodiment is aluminum. Next, as shown in FIG. 3d, a conductive layer 340 is formed on the surface of the above-mentioned insertion bases 351, 352 and the above-mentioned oxide layer 320, wherein the above-mentioned first conductive material can be made of metals such as aluminum and tungsten or polysilicon conductive materials. The composition and the conductive layer are made of different conductive materials. For example, the above-mentioned conductive layer in this embodiment is a polysilicon conductive material. In addition, as shown in Figure 3f, the above-mentioned first conductive layer 340 preferably further includes at least one second conductive layer 341, which is formed on the above-mentioned first conductive layer 340 in a structure that changes from narrow to wide layer by layer, so as to prevent The final microprobe sags due to gravity, and FIG. 3 e is a top view of the above-mentioned first conductive layer 340 .

Then, the substrate 310 is clamped using a clamp 350 as shown in FIG. 3g. Next, as shown in FIGS. 3h and 3i , the second surface 3102 of the silicon substrate 310 is etched using the jig 350 as an etching mask until the conductive layer 340 is exposed. For example, plasma etching is used to remove the exposed silicon substrate 310 not covered by the fixture 50; as shown in FIG. 3g, the oxide layer 320 is etched until the first conductive layer 340 is exposed, forming a groove, as shown in Figure 3h. Therefore, the above-mentioned plug 352 is entirely exposed on the above-mentioned conductive layer 340 to serve as the needle portion of the microprobe, such as the needle portion 71 in FIG. 1 . Of course, the etching step may further include forming a photoresist on the second surface 3102 of the silicon base 310 to serve as an etching mask in the subsequent etching step. In addition, the above-mentioned fixture is like the base 73 in FIG. 1, and can be coupled with a detection system to conduct electrical measurements on the components on the wafer. Through the generated results, it can be known whether the components on the wafer are normal. .

Wherein, in the step of etching the silicon substrate and the above-mentioned oxide layer, both dry etching is used, or the silicon base is dry-etched and the above-mentioned oxide layer is wet-etched or dry-etched.

Although the present invention has been disclosed above with a preferred embodiment, it is not intended to limit the present invention. Anyone skilled in this art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore The scope of protection of the present invention should be defined by the claims.

Claims (16)

1. the manufacture method of a microprobe, step comprises

Form an oxide layer on the above-mentioned first surface of a silicon substrate with a first surface and a second surface;

Form one first contact hole and one second contact hole in above-mentioned oxide layer, wherein above-mentioned second contact hole is less than above-mentioned first contact hole;

Form a conductive layer on above-mentioned first contact hole, second contact hole and whole surface; And

Use this substrate of a clamp clamps, be used as etching mask, the above-mentioned second surface of above-mentioned silicon substrate is carried out etching, up to exposing above-mentioned conductive layer with above-mentioned anchor clamps.

2. the method for claim 1 wherein forms the step of above-mentioned conductive layer, more comprises forming at least one second conductive layer on above-mentioned conductive layer partly.

3. method as claimed in claim 2, wherein above-mentioned second conductive layer are for successively broadening, and along with width successively increases and the structure of thickening.

4. the method for claim 1, wherein the second surface to above-mentioned silicon substrate carries out etching, up to the step of exposing above-mentioned conductive layer, more comprises the step of the above-mentioned oxide layer of an etching.

5. method as claimed in claim 2, wherein above-mentioned conductive layer and at least one second conductive layer are a same material.

6. method as claimed in claim 2, wherein above-mentioned conductive layer and at least one second conductive layer are made of aluminium.

7. method as claimed in claim 2, wherein above-mentioned conductive layer and at least one second conductive layer are constituted by tungsten.

8. method as claimed in claim 4, the step of the above-mentioned oxide layer of etching is wherein used the above-mentioned oxide layer of mode etching of Wet-type etching.

9. method as claimed in claim 4 is wherein carried out etching to above-mentioned silicon substrate, up to the step of exposing above-mentioned conductive layer, is to use the above-mentioned conductive layer of mode etching of dry-etching.

10. the manufacture method of a microprobe, step comprises

Form an oxide layer on the above-mentioned first surface of a silicon substrate with a first surface and a second surface;

Form one first contact hole and one second contact hole in above-mentioned oxide layer, wherein above-mentioned second contact hole is less than above-mentioned first contact hole;

Formation plugs in above-mentioned first contact hole, second contact hole;

Form conductive layer on above-mentioned whole base plate surface; And

Use this substrate of a clamp clamps, be used as etching mask, the above-mentioned second surface of above-mentioned silicon substrate is carried out etching, up to exposing an above-mentioned conductive layer with above-mentioned anchor clamps.

11. manufacture method as claimed in claim 10 wherein forms the step of above-mentioned conductive layer, more comprises

Form at least one second conductive layer on the above-mentioned conductive layer of part.

12. manufacture method as claimed in claim 10, wherein above-mentioned second conductive layer are for successively broadening, and along with width successively increases and the structure of thickening.

13. manufacture method as claimed in claim 11, wherein to above-mentioned silicon substrate second towards carrying out etching, up to the step of exposing above-mentioned conductive layer, more comprise the step of the above-mentioned oxide layer of an etching.

14. manufacture method as claimed in claim 10 is wherein carried out etching to above-mentioned silicon substrate, the step up to exposing above-mentioned conductive layer is to use dry-etching.

15. manufacture method as claimed in claim 13, wherein the step of the above-mentioned oxide layer of etching is to use Wet-type etching.

16. method as claimed in claim 13, wherein the step of the above-mentioned oxide layer of etching is to use dry-etching.

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