CN119400677B - Uniform flow structure, process chamber and semiconductor process equipment - Google Patents
Uniform flow structure, process chamber and semiconductor process equipmentInfo
- Publication number
- CN119400677B CN119400677B CN202411546135.8A CN202411546135A CN119400677B CN 119400677 B CN119400677 B CN 119400677B CN 202411546135 A CN202411546135 A CN 202411546135A CN 119400677 B CN119400677 B CN 119400677B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H10P72/0421—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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Abstract
本申请公开了一种匀流结构、工艺腔室及半导体工艺设备，匀流结构包括：隔环；进气匀流板，设置于隔环沿轴向的一端面，进气匀流板上设置有进气匀流孔；出气匀流板，设置于隔环沿轴向的另一端面，并与隔环、进气匀流板围成第一匀流腔，出气匀流板上设置有多个出气匀流孔；环形挡板，设置于第一匀流腔中，并且沿环形挡板的轴向投影方向，进气匀流孔的投影和部分出气匀流孔的投影位于环形挡板的内圈内，另一部分出气匀流孔的投影位于环形挡板上；驱动机构，与环形挡板连接，用于驱动环形挡板在进气匀流板和出气匀流板之间运动。本申请可以对流场分布进行调节，提高工艺气体的利用率。
This application discloses a flow equalization structure, a process chamber, and semiconductor process equipment. The flow equalization structure includes: a partition ring; an inlet flow equalization plate disposed on one end face of the partition ring along the axial direction, the inlet flow equalization plate having inlet flow equalization holes; an outlet flow equalization plate disposed on the other end face of the partition ring along the axial direction, forming a first flow equalization cavity with the partition ring and the inlet flow equalization plate, the outlet flow equalization plate having multiple outlet flow equalization holes; an annular baffle disposed in the first flow equalization cavity, with the projections of the inlet flow equalization holes and some of the outlet flow equalization holes located within the inner ring of the annular baffle along the axial projection direction of the annular baffle, and the projections of the other part of the outlet flow equalization holes located on the annular baffle; and a driving mechanism connected to the annular baffle for driving the annular baffle to move between the inlet flow equalization plate and the outlet flow equalization plate. This application can adjust the flow field distribution and improve the utilization rate of process gases.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing equipment, in particular to a uniform flow structure, a process chamber and semiconductor process equipment.
Background
In the semiconductor etching equipment, after the process gas enters the process chamber, the process gas flows through the uniform flow holes on the uniform flow plate to reach the process area, and the uniform flow holes can homogenize the process gas so as to improve the etching uniformity.
Under the structure, the flow field distribution of the process gas is limited by the existing uniform flow hole design, the adjustment cannot be carried out, and the gas utilization rate is low when the wafer process with small size is carried out.
Disclosure of Invention
The application provides a uniform flow structure, a process chamber and semiconductor process equipment, which can solve the problem of low gas utilization rate when a uniform flow plate of the existing process chamber is switched to a process of a small-size wafer.
In order to solve the above technical problems, in a first aspect, an embodiment of the present application provides a uniform flow structure, including:
A spacer ring;
the air inlet uniform flow plate is arranged on one axial end face of the partition ring, and an air inlet uniform flow hole is formed in the air inlet uniform flow plate;
The air outlet uniform flow plate is arranged on the other end face of the spacing ring along the axial direction, and forms a first uniform flow cavity together with the spacing ring and the air inlet uniform flow plate, and a plurality of air outlet uniform flow holes are formed in the air outlet uniform flow plate;
The annular baffle is arranged in the first uniform flow cavity, and along the axial projection direction of the annular baffle, the projection of the air inlet uniform flow holes and the projection of part of the air outlet uniform flow holes are positioned in the inner ring of the annular baffle, and the projection of the other part of the air outlet uniform flow holes is positioned on the annular baffle;
and the driving mechanism is connected with the annular baffle plate and used for driving the annular baffle plate to move between the air inlet uniform flow plate and the air outlet uniform flow plate.
Optionally, the air inlet uniform flow holes are provided with a plurality of air inlet uniform flow holes and are uniformly distributed on a circle taking the center of the air inlet uniform flow plate as the center of a circle.
Optionally, the diameter of the air inlet uniform flow hole is 5-15 times of the diameter of the air outlet uniform flow hole.
Optionally, the air inlet uniform flow plate is provided with a central heating area and at least one annular heating area;
The central heating zone and the circle are concentrically arranged, and the at least one annular heating zone sequentially surrounds the outer side of the central heating zone.
Optionally, the heating temperature of the central heating zone and the at least one annular heating zone are sequentially increased from the center of the air inlet uniform flow plate to the edge direction.
Optionally, the plurality of air outlet uniform flow holes are uniformly distributed on the air outlet uniform flow plate, and projecting the air outlet uniform flow holes located in the inner ring of the annular baffle along the axial projection direction of the annular baffle comprises:
A plurality of first uniform flow holes projected on the center of the inner ring of the annular baffle plate and a plurality of second uniform flow holes positioned on the edge of the annular baffle plate, wherein the diameter of the first uniform flow holes is larger than that of the second uniform flow holes, and/or,
The diameter of the second uniform flow holes is equal to the diameter of the air outlet uniform flow holes projected on the annular baffle plate.
Optionally, the driving mechanism includes:
the guide rod movably penetrates through the air inlet uniform flow plate and is connected with the annular baffle plate;
the driving source is connected with the guide rod and used for driving the guide rod to drive the annular baffle plate to move between the air inlet uniform flow plate and the air outlet uniform flow plate.
In a second aspect, embodiments of the present application also provide a process chamber including the uniform flow structure described in the embodiments above, an
The top of the chamber body is open;
The upper cover is sealed at the opening and is provided with an air inlet;
The air inlet uniform flow plate is arranged below the upper cover, and a second uniform flow cavity is formed between the air inlet uniform flow plate and the upper cover;
the air outlet uniform flow plate is arranged at the bottom of the air inlet uniform flow plate;
the air inlet is communicated with the second uniform flow cavity.
Optionally, a supporting step is arranged on the inner wall of the chamber body close to the opening;
The process chamber further comprises an annular mounting seat, a first flange matched with the supporting step is arranged on the outer wall of the annular mounting seat, the annular mounting seat is supported on the supporting step, and the top surface of the annular mounting seat does not exceed the top surface of the chamber body;
The inner wall of the annular mounting seat is provided with a second flange, and the air outlet uniform flow plate is supported on the second flange;
the air inlet uniform flow plate, the upper cover and the inner wall of the annular mounting seat enclose a second uniform flow cavity.
In a third aspect, embodiments of the present application further provide a semiconductor processing apparatus, including a plasma generating device, and a process chamber as described in the above embodiments;
The plasma generating device is connected with the gas inlet and is used for inputting process gas into the process chamber.
The uniform flow structure of the application comprises the air inlet uniform flow plate, the air outlet uniform flow plate, the annular baffle plate and the driving mechanism, wherein the annular baffle plate can move between the air inlet uniform flow plate and the air outlet uniform flow plate under the action of the driving mechanism, when a process of a large-size wafer is carried out, the driving mechanism can drive the annular baffle plate to move to the surface of the air inlet uniform flow plate, and the air inlet uniform flow holes are exposed in the inner ring of the annular baffle plate, so that no matter to which position the annular baffle plate moves, the air can be normally input into the first uniform flow cavity through the air inlet uniform flow holes of the air inlet uniform flow plate. At this time, all the air outlet uniform flow holes of the air outlet uniform flow plate are communicated with the first uniform flow cavity, so that the process can be performed on the large-size wafer. When the process of the small-size wafer is carried out, the driving mechanism can drive the annular baffle plate to move to the surface of the air outlet uniform flow plate, and the air outlet uniform flow holes at the edge of the air outlet uniform flow plate are shielded, so that the process gas at the edge is prevented from being directly pumped away without participating in the reaction. Therefore, the uniform flow structure can adjust the distribution of the flow field, thereby being capable of being compatible with the process of large-size wafers and small-size wafers accurately, and greatly reducing the probability that the process gas is directly pumped away without reaction when the process of the small-size wafers is carried out, thereby improving the utilization rate of the process gas.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application. In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, and it will be obvious to those skilled in the art that other drawings can be obtained from these drawings without inventive effort.
FIG. 1 is a schematic view of a process chamber of the related art;
FIG. 2 is a schematic view of a process chamber according to an embodiment of the present application;
FIG. 3 is a schematic view of a structure of an intake air flow-homogenizing plate according to an embodiment of the present application;
FIG. 4 is a schematic view of a structure of an air outlet uniform flow plate according to an embodiment of the present application;
fig. 5 is a schematic structural view of an annular baffle according to an embodiment of the present application, where (a) is a front view and (b) is a bottom view;
FIG. 6 is an axially overlapping schematic view of an inlet flow restrictor and annular baffle provided in an embodiment of the present application;
FIG. 7 is an axial overlapping schematic view of an outlet flow uniformity plate and an annular baffle provided by an embodiment of the present application;
FIG. 8 is a schematic structural view of a uniform flow plate of the related art;
FIG. 9 is a cloud of flow fields and oxygen radical distributions corresponding to the uniform flow plate of FIG. 8;
FIG. 10 is a schematic view of another process chamber of the related art;
FIG. 11 is a cloud diagram of a flow field and oxygen radical distribution corresponding to a uniform flow structure according to an embodiment of the present application;
fig. 12 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present application;
The achievement of the objects, functional features and advantages of the present application will be further described with reference to the accompanying drawings, in conjunction with the embodiments. Specific embodiments of the present application have been shown by way of the above drawings and will be described in more detail below. The drawings and the written description are not intended to limit the scope of the inventive concepts in any way, but rather to illustrate the inventive concepts to those skilled in the art by reference to the specific embodiments.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the application. Rather, they are merely examples of apparatus and methods consistent with aspects of the application as detailed in the accompanying claims.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, the element(s) defined by the phrase "comprising one does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other like elements in different embodiments of the application having the same meaning as may be defined by the same meaning as they are explained in this particular embodiment or by further reference to the context of this particular embodiment.
It will be further understood that the terms "comprises," "comprising," "includes," and/or "including" specify the presence of stated features, steps, operations, elements, components, items, categories, and/or groups, but do not preclude the presence, presence or addition of one or more other features, steps, operations, elements, components, items, categories, and/or groups. The terms "or", "and/or", "including at least one of", and the like, as used herein, may be construed as inclusive, or mean any one or any combination. For example, "including at least one of" A, B, C "means" any of A, B, C, A and B, A and C, B and C, A and B and C ", and as yet another example," A, B or C "or" A, B and/or C "means" any of A, B, C, A and B, A and C, B and C, A and B and C ". An exception to this definition will occur only when a combination of elements, functions, steps or operations are in some way inherently mutually exclusive.
It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, these information should not be limited by these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope herein. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, depending on the context, unless the context indicates otherwise.
It should be understood that the terms "top," "bottom," "upper," "lower," "vertical," "horizontal," and the like indicate an orientation or positional relationship based on that shown in the drawings, and are merely for convenience of description and to simplify the description, and do not indicate or imply that the apparatus in question must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the application.
For convenience of description, in the following embodiments, orthogonal spaces defined in horizontal and vertical directions are taken as examples, and this precondition should not be construed as limiting the present application.
Referring to fig. 1, fig. 1 is a schematic view of a related art process chamber, in which a process gas enters the chamber from a top cover 10a, flows through a flow uniformity hole 21a on a flow uniformity plate 20a, and reaches a surface of a wafer 101a on a lift base 30a to etch the wafer. In the figure, an 8-inch wafer is taken as an example, but when a 6-inch wafer process is performed, the flow field distribution of process gas is limited by the existing uniform flow hole design, and the gas at the edge is pumped away without being fully utilized, so that the gas utilization rate is low. Based on the above, the application provides a uniform flow structure, a process chamber and semiconductor process equipment.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a process chamber according to an embodiment of the present application, and the flow homogenizing structure may include a spacer ring 10, an inlet flow homogenizing plate 20, an outlet flow homogenizing plate 30, an annular baffle 40 and a driving mechanism 50.
In combination with an actual application scene, the axial direction of the spacer ring 10 is defined as the vertical direction, and then the two end faces of the spacer ring 10 along the axial direction are oppositely arranged along the vertical direction. The air inlet uniform flow plate 20 is disposed at one end face (i.e. upper end face) of the spacer ring 10, and the air inlet uniform flow plate 20 is provided with air inlet uniform flow holes 21, and one or more air inlet uniform flow holes 21 may be provided, which is not limited in particular in this embodiment. The air outlet flow homogenizing plate 30 is disposed on the other end surface (i.e. the lower end surface) of the spacer ring 10, and encloses the first flow homogenizing chamber 110 with the spacer ring 10 and the air inlet flow homogenizing plate 20, and a plurality of air outlet flow homogenizing holes 31 are disposed on the air outlet flow homogenizing plate 30. It should be noted that, the air inlet uniform flow plate 20, the spacer ring 10 and the air outlet uniform flow plate 30 may be separate components, which are assembled to form the first uniform flow chamber 110, or may be integrated with each other, for example, the spacer ring 10 and the air inlet uniform flow plate 20 are integrally formed, or the spacer ring 10 and the air outlet uniform flow plate 30 are integrally formed.
Referring to fig. 3 to fig. 7, fig. 3 is a schematic structural diagram of an air inlet flow-homogenizing plate according to an embodiment of the present application, fig. 4 is a schematic structural diagram of an air outlet flow-homogenizing plate according to an embodiment of the present application, fig. 5 is a schematic structural diagram of an annular baffle according to an embodiment of the present application, wherein (a) is a front view, (b) is a bottom view, fig. 6 is a schematic axial overlapping diagram of an air inlet flow-homogenizing plate and an annular baffle according to an embodiment of the present application, and fig. 7 is a schematic axial overlapping diagram of an air outlet flow-homogenizing plate and an annular baffle according to an embodiment of the present application. The annular baffle 40 is disposed in the first uniform flow chamber 110, and in the axial projection direction of the annular baffle 40, the projection of the air inlet uniform flow hole 21 and the projection of part of the air outlet uniform flow hole 31A are located in the inner ring of the annular baffle 40, and the projection of the other part of the air outlet uniform flow hole 31B is located on the annular baffle 40. In other words, in the axial direction of the annular barrier 40, the inlet air-homogenizing holes 21 and the outlet air-homogenizing holes 31A near the center are exposed in the inner ring of the annular barrier 40, and the outlet air-homogenizing holes 31B near the edge are blocked by the annular barrier 40. A drive mechanism 50 is coupled to the annular baffle 40 for driving the annular baffle 40 between the inlet and outlet flow-homogenizing plates 20, 30.
The working principle of the flow-homogenizing structure of this embodiment is that, please continue to refer to fig. 2, the gas enters the first flow-homogenizing cavity 110 through the gas-inlet flow-homogenizing hole 21 of the gas-inlet flow-homogenizing plate 20, and then flows out from the gas-outlet flow-homogenizing hole 31 of the gas-outlet flow-homogenizing plate 30 to reach the process area for processing. When a process of a large-sized wafer 101 (e.g., 8 inches) is performed, the driving mechanism 50 may drive the annular baffle 40 to move to the surface of the inlet baffle 20 (the bottom surface of the inlet baffle 20 in fig. 2), and since the inlet baffle 21 is exposed to the inner ring of the annular baffle 40, the gas may be normally introduced into the first uniform flow chamber 110 through the inlet baffle 21 of the inlet baffle 20 regardless of the position to which the annular baffle 40 moves. At this time, all the gas outlet uniform flow holes 31 of the gas outlet uniform flow plate 30 are communicated with the first uniform flow chamber 110, so that the process can be performed on the large-sized wafer 101. When the process of the small-sized wafer 102 is performed, the driving mechanism 50 may drive the annular baffle 40 to move to the surface of the gas outlet and flow homogenizing plate 30 (the top surface of the gas outlet and flow homogenizing plate 30 in fig. 2), and shield the gas outlet and flow homogenizing holes 31B at the edge of the gas outlet and flow homogenizing plate 30, so as to prevent the process gas at the edge from being directly pumped away without participating in the reaction, thereby improving the utilization rate of the process gas.
It will be appreciated that the diameter of the inner ring and the diameter of the outer ring of the annular baffle 40 may be set according to the sizes of the small-sized wafer and the large-sized wafer, for example, the diameter of the inner ring is slightly larger than the diameter of the small-sized wafer, the diameter of the outer ring is slightly larger than the diameter of the large-sized wafer, and the air outlet flow homogenizing holes 31B at the edge of the air outlet flow homogenizing plate 30 can be shielded. The uniform flow structure of the embodiment can adjust the distribution of the flow field, thereby being capable of being compatible with the process of large-size wafers and small-size wafers accurately, and greatly reducing the probability that the process gas is directly pumped away without reaction when the process of the small-size wafers is carried out, thereby improving the utilization rate of the process gas.
In the present embodiment, the specific structures of the inlet and outlet uniform flow plates 20 and 30 are not particularly limited, and a conventional well-known uniform flow plate may be used. As an example, referring to fig. 1 and 8, fig. 8 is a schematic structural diagram of a flow-homogenizing plate of the related art, in which the diameter of the flow-homogenizing holes 21a on the flow-homogenizing plate 20a increases in radial direction, that is, the hole diameter of the center is small, and the hole diameter of the edge is large, the arrangement can improve the uniformity of the air flow in the chamber, but this makes the flow field speed in the center of the wafer slow. Taking the process gas as N 2+O2 as an example, referring to fig. 9, fig. 9 is a flow field and oxygen radical distribution cloud diagram corresponding to the flow homogenizing plate of fig. 8, the process gas enters from the center, the concentration of oxygen (O) radicals in the center of the flow homogenizing plate 20a is high, and the O radicals can be accumulated in the center of the wafer, so that the center photoresist removing speed is too fast, the uniformity is poor, and failure phenomena such as pits are easy to occur.
Based on this, referring to fig. 6, as a modified example, the intake air uniform flow holes 21 on the intake air uniform flow plate 20 may be provided in plurality and uniformly distributed on a circle centered on the center of the intake air uniform flow plate 20. In fig. 6, 6 intake air uniflow holes 21 are provided. By eccentrically arranging the air inlet uniform flow holes 21, excessive O free radicals can be prevented from entering the first uniform flow cavity 110 from the center and then directly entering the center of the process chamber through the air outlet uniform flow plate 30, so that the photoresist removing rate of the center of the wafer can be reduced, and the etching uniformity can be improved.
Referring to fig. 10, fig. 10 is a schematic structural diagram of another related art process chamber, in which the flow-homogenizing structure includes an upper flow-homogenizing plate 11b and a lower flow-homogenizing plate 12b, the upper flow-homogenizing plate 11b and the lower flow-homogenizing plate 12b each adopt a multi-aperture distributed structure, and the upper flow-homogenizing holes and the lower flow-homogenizing holes are staggered to adjust the flow field distribution inside the chamber. By providing a double flow-homogenizing plate, a more uniform flow field can be achieved at the outlet end of the lower flow-homogenizing plate 12 b. However, this configuration results in a reduced flow rate of process gas and a corresponding reduction in the number of O radicals passing therethrough, which in turn results in a reduced overall photoresist stripping rate.
Based on this, as a modified example, as shown in fig. 3,4 and 7, the diameter D1 of the air inlet and outlet holes 21 may be set to be larger than the diameter D2 of the air outlet and outlet holes 31, preferably, d1= (5-15) D2. For example, d1=15 to 25mm, d2=1 mm, 1.5mm, 2mm, 3mm, and the like. By providing a larger inlet swirl hole 21, it is ensured that enough process gas is fed to promote the overall photoresist stripping rate. If the diameter D1 of the air intake homogenizing holes 21 is too small, the flow rate is reduced, the amount of gas passing through is reduced, and thus the photoresist stripping rate cannot be improved, and if D1 is too large, the number of the air intake homogenizing holes 21 which can be arranged on the air intake homogenizing holes 21 is reduced, and the homogenizing effect is reduced. The embodiment can obtain better balance between the photoresist stripping rate and the uniform flow effect through reasonable aperture arrangement.
In one embodiment, referring to fig. 7, the outlet holes 31 are uniformly distributed on the outlet flow homogenizing plate 30, for example, may be rectangular array distribution as shown in fig. 7, or may be uniformly distributed according to a circle, a polygon, etc. The outlet flow homogenizing holes 31A projected in the inner ring of the annular barrier 40 in the axial projection direction of the annular barrier 40 may include a plurality of first flow homogenizing holes 311 and a plurality of second flow homogenizing holes 312. The projection of the first uniform flow holes 311 is positioned at the center of the inner ring of the annular baffle 40, the projection of the second uniform flow holes 312 is positioned at the edge of the annular baffle 40, and the diameter of the first uniform flow holes 311 is larger than the diameter of the second uniform flow holes 312. I.e., the first uniform flow holes 311 disposed near the center of the outlet uniform flow plate 30 have a larger diameter than the second uniform flow holes 312 disposed near the edge of the outlet uniform flow plate 30, among the outlet uniform flow holes 31A exposed in the inner ring of the annular baffle 40. Illustratively, the diameter of the outlet flow holes 31B projected on the annular baffle 40 may be equal to the diameter of the second flow holes 312 to improve the uniformity of the rim flow field.
The gas outlet uniform flow plate 30 of the embodiment adopts dense and uniformly distributed gas outlet uniform flow holes 31, which can effectively promote the flow field uniformity in the process chamber, and because the wafer edge is closer to the extraction opening, the gas outlet uniform flow holes 31A projected in the inner ring of the annular baffle 40 adopt a distribution mode with large inner side and small outer side, can prevent excessive gas from directly entering the chamber through the edge of the gas outlet uniform flow holes 31 and being directly extracted, so that the utilization rate is low, and simultaneously, the diameter of the central gas outlet uniform flow holes 31 is increased, which is beneficial to promoting the flow field speed in the central area above the wafer, avoiding the excessive accumulation of O free radicals in the central area of the wafer, and promoting the uniformity of the distribution of O free radicals above the wafer.
In addition, due to the limitation of the RF source structure of the ignition chamber, the plasma mainly bombards the air inlet uniform flow plate 20 from the center, so that the center temperature of the air inlet uniform flow plate 20 is obviously higher than the edge temperature, the center temperature of O free radicals above the wafer is high, the edge temperature is low, the photoresist stripping rate of the center of the wafer is too high, the uniformity is poor, and the pit failure phenomenon occurs.
Based on this, as a modified example, as shown in fig. 3 and 6, the air inlet uniform flow plate 20 is provided with a central heating zone 22, and at least one annular heating zone, the central heating zone 22 and the air inlet uniform flow plate 20 are concentrically arranged, the annular heating zones sequentially surround the outer side of the central heating zone 22, two annular heating zones 23A and 23B are taken as examples, wherein a broken line is a dividing line between each zone, and in other embodiments, only one or more than three annular heating zones may be provided. As an example, the temperature of the intake air uniform flow plate 20 may be individually controlled by providing resistance wires at regions corresponding to the respective heating regions inside the intake air uniform flow plate 20, to compensate for the non-uniformity of the temperature of the intake air uniform flow plate 20 from the center to the edge. For example, the heating temperature settings of the central heating zone 22 and all the annular heating zones 23 are sequentially increased from the center of the inlet uniform flow plate 20 toward the edge. For example, the temperature setting of the central heating zone 22 may be 80-100 ℃, the temperature setting of the central annular heating zone 23A may be 100-120 ℃, and the temperature setting of the peripheral annular heating zone 23B may be 120-140 ℃.
Referring to fig. 11, fig. 11 is a flow field and oxygen radical distribution cloud diagram corresponding to a uniform flow structure provided by the embodiment of the present application, in which an inlet uniform flow plate 20, an outlet uniform flow plate 30 and an annular baffle 40 are respectively shown in fig. 3-5, so as to simulate a process for an 8-inch wafer, the annular baffle 40 rises to the bottom surface of the inlet uniform flow plate 20, the aperture of the inlet uniform flow hole 21 of the inlet uniform flow plate 20 is 20mm, the pitch diameter tangential to the inlet uniform flow hole 21 is 100mm, the aperture of the outlet uniform flow hole 31 (the first uniform flow hole 311) in the center of the outlet uniform flow plate 30 is 3mm, the aperture of the outlet uniform flow hole 31 (the second uniform flow hole 312 and the second uniform flow hole 312 blocked by the annular baffle 40) at the edge is 2mm, and the boundary circle diameter of the large uniform flow hole and the small uniform flow hole is 100mm. Comparing fig. 9 and fig. 11, it can be seen that the flow field distribution and the O radical distribution of the uniform flow structure of the present application are more uniform, so that the photoresist stripping uniformity can be improved.
In one embodiment, with continued reference to fig. 2 and 5, the drive mechanism 50 may include a guide rod 51 and a drive source 52. The guide rod 51 movably passes through the intake air uniform flow plate 20 and is connected to the annular baffle 40, and for example, a connection hole 41 may be provided in the annular baffle 40, and the guide rod 51 is connected to the connection hole 41. Two or more sets of guide rods 51 may be provided correspondingly to improve the stability of the driving mechanism. The driving source 52 is connected with the guide rod 51, and is used for driving the guide rod 51 to drive the annular baffle 40 to move between the air inlet uniform flow plate 20 and the air outlet uniform flow plate 30, so that the air outlet uniform flow holes 31 at the edge of the air outlet uniform flow plate 30 can be blocked and opened for switching, the process of wafers with different sizes can be adapted, and the process gas utilization rate is high.
Referring to fig. 2 and 12, fig. 12 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present application, where the processing chamber may include the uniform flow structure 100, the chamber body 200 and the upper cover 300 as described in the above embodiments. The top of the chamber body 200 is open, the upper cover 300 covers the opening 210, the upper cover 300 is provided with an air inlet 310, and a nozzle can be arranged at the air inlet 310 to be connected with an air source. The air inlet uniform flow plate 20 of the uniform flow structure 100 is disposed below the upper cover 300, and forms a second uniform flow chamber 120 with the upper cover 300, the air outlet uniform flow plate 30 is disposed at the bottom of the air inlet uniform flow plate 20, and the air inlet 310 of the upper cover 300 is communicated with the second uniform flow chamber 120.
In one embodiment, referring to fig. 12, the inner wall of the chamber body 200 is provided with a supporting step 220 near the opening, the process chamber further includes an annular mounting seat 400, the outer wall of the annular mounting seat 400 is provided with a first flange 410 matched with the supporting step 220, the annular mounting seat 400 is supported on the supporting step 220, and the top surface does not exceed the top surface of the chamber body 200, for example, the top surfaces of the two may be flush. The inner wall of the annular mounting base 400 is provided with a second flange 420, and the gas outlet uniform flow plate 30 is supported on the second flange 420. The second uniform flow chamber 120 is defined by the inlet uniform flow plate 20, the upper cover 300 and the inner wall of the annular mounting base 400.
Still further, with continued reference to fig. 12, embodiments of the present application provide a semiconductor processing apparatus that may include a plasma generating device 500, and a process chamber as described in the above embodiments. The plasma generating apparatus 500 is connected to the gas inlet 310 for inputting process gases into the process chamber. The plasma generation apparatus 500 may dissociate the process gas outside the process chamber to form a remote plasma source.
Regarding other working principles and processes of the process chamber and the semiconductor processing apparatus in this embodiment, reference is made to the description of the uniform flow structure in the foregoing embodiment of the present invention, and the description is omitted here.
The above description is provided for a uniform flow structure, a process chamber and a semiconductor process device, and specific examples are used herein to illustrate the principles and embodiments of the present application. In the present application, the descriptions of the embodiments are focused on, and the details or descriptions of the other embodiments may be referred to for the parts not described in detail or in the description of one embodiment.
The foregoing is only a preferred embodiment of the present application, and therefore, the technical features of the technical solution of the present application may be combined arbitrarily, and for brevity, all of the possible combinations of the technical features in the foregoing embodiment may not be described, and all of the equivalent structures or equivalent processes using the descriptions of the present application and the contents of the drawings may be applied directly or indirectly to other related technical fields, so long as the combinations of the technical features are not contradictory, and all of them are included in the protection scope of the present application.
Claims (10)
1. A uniform flow structure, comprising:
A spacer ring;
the air inlet uniform flow plate is arranged on one axial end face of the partition ring, and an air inlet uniform flow hole is formed in the air inlet uniform flow plate;
The air outlet uniform flow plate is arranged on the other end face of the spacing ring along the axial direction, and forms a first uniform flow cavity together with the spacing ring and the air inlet uniform flow plate, and a plurality of air outlet uniform flow holes are formed in the air outlet uniform flow plate;
The annular baffle is arranged in the first uniform flow cavity, and along the axial projection direction of the annular baffle, the projection of the air inlet uniform flow holes and the projection of part of the air outlet uniform flow holes are positioned in the inner ring of the annular baffle, and the projection of the other part of the air outlet uniform flow holes is positioned on the annular baffle;
and the driving mechanism is connected with the annular baffle plate and used for driving the annular baffle plate to move between the air inlet uniform flow plate and the air outlet uniform flow plate.
2. The uniform flow structure according to claim 1, wherein the intake air uniform flow holes are provided in plurality and uniformly distributed on a circle centered on the center of the intake air uniform flow plate.
3. The uniform flow structure according to claim 2, wherein the diameter of the inlet uniform flow hole is 5-15 times the diameter of the outlet uniform flow hole.
4. The flow homogenizing structure of claim 2, wherein the inlet flow homogenizing plate is provided with a central heating zone, and at least one annular heating zone;
The central heating zone and the circle are concentrically arranged, and the at least one annular heating zone sequentially surrounds the outer side of the central heating zone.
5. The flow-homogenizing structure of claim 4, wherein the heating temperature settings of the central heating zone and the at least one annular heating zone are sequentially increasing from the center of the inlet flow-homogenizing plate to the edge direction.
6. The flow-homogenizing structure of claim 1, wherein the plurality of outlet flow-homogenizing holes are uniformly distributed on the outlet flow-homogenizing plate, and projecting the outlet flow-homogenizing holes located within an inner ring of the annular baffle in an axial projection direction of the annular baffle comprises:
A plurality of first uniform flow holes projected on the center of the inner ring of the annular baffle plate and a plurality of second uniform flow holes positioned on the edge of the annular baffle plate, wherein the diameter of the first uniform flow holes is larger than that of the second uniform flow holes, and/or,
The diameter of the second uniform flow holes is equal to the diameter of the air outlet uniform flow holes projected on the annular baffle plate.
7. The uniform flow structure according to claim 1, wherein said driving mechanism comprises:
the guide rod movably penetrates through the air inlet uniform flow plate and is connected with the annular baffle plate;
the driving source is connected with the guide rod and used for driving the guide rod to drive the annular baffle plate to move between the air inlet uniform flow plate and the air outlet uniform flow plate.
8. A process chamber comprising the uniform flow structure of any one of claims 1-7, and
The top of the chamber body is open;
The upper cover is sealed at the opening and is provided with an air inlet;
the air inlet uniform flow plate is arranged at the bottom of the upper cover, and a second uniform flow cavity is formed between the air inlet uniform flow plate and the upper cover;
The air outlet uniform flow plate is arranged below the air inlet uniform flow plate;
the air inlet is communicated with the second uniform flow cavity.
9. The process chamber of claim 8, wherein an inner wall of the chamber body is provided with a support step adjacent the opening;
The process chamber further comprises an annular mounting seat, a first flange matched with the supporting step is arranged on the outer wall of the annular mounting seat, the annular mounting seat is supported on the supporting step, and the top surface of the annular mounting seat does not exceed the top surface of the chamber body;
The inner wall of the annular mounting seat is provided with a second flange, and the air outlet uniform flow plate is supported on the second flange;
the air inlet uniform flow plate, the upper cover and the inner wall of the annular mounting seat enclose a second uniform flow cavity.
10. A semiconductor processing apparatus comprising a plasma generating device, and the process chamber of claim 8 or 9;
The plasma generating device is connected with the gas inlet and is used for inputting process gas into the process chamber.
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| CN112863990A (en) * | 2020-12-17 | 2021-05-28 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and air inlet mechanism thereof |
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| KR100400044B1 (en) * | 2001-07-16 | 2003-09-29 | 삼성전자주식회사 | Shower head of wafer treatment apparatus having gap controller |
| US6793733B2 (en) * | 2002-01-25 | 2004-09-21 | Applied Materials Inc. | Gas distribution showerhead |
| KR101200720B1 (en) * | 2011-03-31 | 2012-11-13 | 최대규 | Plasma reactor having hot baffle and wafer handle method thereof |
| KR101939225B1 (en) * | 2017-08-11 | 2019-04-11 | 피에스케이 주식회사 | A baffle assembly and an apparatus for treating a substrate with the baffle |
| KR102444873B1 (en) * | 2018-04-06 | 2022-09-19 | 주식회사 원익아이피에스 | Substrate processing apparatus and substrate processing method using the same |
| US11798803B2 (en) * | 2019-05-15 | 2023-10-24 | Applied Materials, Inc. | Dynamic multi zone flow control for a processing system |
| KR102275037B1 (en) * | 2019-06-26 | 2021-07-08 | 한국화학연구원 | Chemical Vapor Deposition Reactor |
| JP7281433B2 (en) * | 2020-06-24 | 2023-05-25 | 株式会社日立ハイテク | Plasma processing equipment |
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| CN1638026A (en) * | 2004-01-07 | 2005-07-13 | 松下电器产业株式会社 | Substrate processing device and cleaning method thereof |
| CN112863990A (en) * | 2020-12-17 | 2021-05-28 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and air inlet mechanism thereof |
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