CN119382659A - A sound wave resonator and filter - Google Patents
A sound wave resonator and filter Download PDFInfo
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- CN119382659A CN119382659A CN202510000613.3A CN202510000613A CN119382659A CN 119382659 A CN119382659 A CN 119382659A CN 202510000613 A CN202510000613 A CN 202510000613A CN 119382659 A CN119382659 A CN 119382659A
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Abstract
本发明属于声表面波技术领域，本发明提供了一种声波谐振器及滤波器，所述声波谐振器包括依次层叠设置的压电基板、功能层及温度补偿层；所述功能层包括叉指换能器以及反射器；所述声波谐振器还包括椭圆金属环，所述椭圆金属环设置于所述叉指换能器的上方，且与所述叉指换能器的表面所在的平面具有第一间隔。本发明通过在TC‑SAW的叉指换能器的上方设置几何特征和尺寸特征可以调整的椭圆金属环，从而在叉指换能器中的间隙区创建不同的声速区，进而有效抑制杂散模式、防止横向能量泄露，提高波导能力及谐振器的品质因数。
The present invention belongs to the field of surface acoustic wave technology. The present invention provides an acoustic wave resonator and a filter. The acoustic wave resonator includes a piezoelectric substrate, a functional layer and a temperature compensation layer stacked in sequence; the functional layer includes an interdigital transducer and a reflector; the acoustic wave resonator also includes an elliptical metal ring, which is arranged above the interdigital transducer and has a first interval with the plane where the surface of the interdigital transducer is located. The present invention creates different sound speed zones in the gap area of the interdigital transducer by arranging an elliptical metal ring with adjustable geometric and dimensional features above the interdigital transducer of TC‑SAW, thereby effectively suppressing stray modes, preventing lateral energy leakage, and improving the waveguide capability and the quality factor of the resonator.
Description
Technical Field
The invention belongs to the field of surface acoustic waves, and relates to an acoustic wave resonator and a filter.
Background
Surface acoustic waves (Surface Acoustic Wave, SAW) are elastic waves that propagate along a solid surface with energy concentrated primarily near the surface. SAW technology has found wide application in the fields of wireless communications, sensors, filters, etc. The Surface Acoustic Wave Resonator (SAWR) is an important structure and device for realizing the wide application of SAW technology, and has the characteristics of high Q value, miniaturization, low power consumption and the like.
A conventional acoustic surface resonator consists of a piezoelectric material, an interdigital transducer (INTERDIGITAL TRANSDUCER, IDT) and a reflective grating (REFLECTIVE GRATING). The IDT is used for exciting and detecting the SAW, and the reflecting grating is used for reflecting the SAW to form a resonant cavity. The propagation of acoustic surface waves depends on the elastic constant and density of the material, and both properties are affected by temperature, so that the conventional SAWR using lithium niobate (LiNbO 3) or the like as a piezoelectric material has high temperature sensitivity, and the development of the conventional SAWR is limited.
To overcome this challenge, the former designed a temperature compensated surface acoustic wave (TC-SAW) resonator with 128 ° Y-X lithium niobate as the substrate, silicon dioxide (SiO 2) as the temperature compensation layer, and an interdigital transducer embedded under it. The thermal expansion coefficient of silicon dioxide is opposite to that of lithium niobate, so that a compensation effect is generated, and the influence of temperature change on the performance of the resonator is reduced. Since the 80 s of the 20 th century, this temperature compensation method has been widely studied and is currently commercially applied to mobile communication.
Depending on the IDT metal used, the mode of operation of the TC-SAW (primary mode) may be horizontal shear surface acoustic waves (SH-SAW) or rayleigh surface acoustic waves. However, TC-SAW resonators often encounter multiple spurious modes including a lateral mode, a primary mode, and multiple mode types where the primary mode is coupled with other modes. The presence of these spurious modes can create passband ripple and limit out-of-band rejection, thereby compromising the performance of the acoustic wave filter. In contrast, by selecting a suitable cutting angle, optimizing the IDT thickness, or optimizing the temperature compensation layer thickness for a lithium niobate or other such material, a certain suppression effect can be achieved, but because lithium niobate has strong anisotropy, it is not easy to completely eliminate excitation of horizontal shear surface acoustic waves.
Therefore, a new scheme for reducing the spurious modes of the TC-SAW is still required to be researched and developed so as to improve the acoustic performance of the acoustic wave resonator, the filter containing the acoustic wave resonator and other devices, and further development of the acoustic wave resonator in practical application is promoted.
Disclosure of Invention
In view of the problems existing in the prior art, the invention aims to provide an acoustic wave resonator and a filter, wherein the acoustic wave resonator has a novel structure, and an elliptical metal ring with adjustable geometric characteristics and size characteristics is arranged above an interdigital transducer of a TC-SAW, so that different sound velocity areas are created in a gap area of the interdigital transducer, thereby effectively inhibiting a spurious mode, preventing transverse energy leakage and improving waveguide capacity and the quality factor of the resonator.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides an acoustic wave resonator which comprises a piezoelectric substrate, a functional layer and a temperature compensation layer which are sequentially stacked, wherein the functional layer comprises an interdigital transducer and reflectors which are oppositely arranged at two sides of the interdigital transducer;
The acoustic wave resonator further comprises an elliptical metal ring, wherein the elliptical metal ring is arranged above the interdigital transducer and is provided with a first interval with a plane where the surface of the interdigital transducer is located.
According to the invention, the elliptical metal ring is arranged in the temperature compensation type surface acoustic wave resonator and is used as a new optimized structure, and the elliptical metal ring is arranged above the interdigital transducer under the condition of not changing the structure of the interdigital transducer, so that the orthographic projection of the elliptical metal ring to the functional layer is positioned in the IDT area to play a modulation role, and different sound velocity areas are created in a gap area between an active area and a bus bar in the interdigital transducer, so that the transverse mode is favorably inhibited. That is, the adjustment of the acoustic wave velocity of the gap region is effectively achieved by strategically arranging the elliptical metal rings, and thus a propagation mode with a transverse wave vector of approximately zero can be created in the active region of the resonator, ultimately achieving excellent effects of improving the waveguide capability, suppressing spurious modes, and increasing the quality factor (Q value) of the resonator.
In particular, the technical mechanism of the present invention involves the use of an elliptical metal ring made of dense metal that can replicate the shape of the envelope function of the desired Surface Acoustic Wave (SAW). The technical mechanism involves the shaping of the elliptical metal ring such that the electric field applied to the device is primarily used to excite the desired primary vibration mode, i.e., this is accomplished by the geometric features of the elliptical metal ring confining the vibration energy to specific regions of the device body. The technique relies on the relationship between the impulse response of the acoustic wave of the device, the electrode geometry under the elliptical metal ring, and its frequency response. The implementation of this technical mechanism consists not only in using an oval metal ring consisting of dense heavy metals and having a shape closely matching the intended SAW wave envelope, but also in correctly positioning and arranging the oval metal ring so that it can influence the propagation of the SAW according to the required envelope function. At the same time, the density of the heavy metals, the geometry and placement of the rings need to work cooperatively to limit the vibrational energy to specific areas of the device. The use of heavy metal oval metal rings can provide a more powerful, efficient and consistent means for controlling the vibration modes of the SAW, thereby improving the performance of the device. This approach helps mitigate the effects of lateral spurious modes, which are unwanted vibrations that may interfere with the primary vibration mode that is desired. By shaping SAW propagation using an elliptical metal ring, a clearer, more selective frequency response can be achieved.
The following technical scheme is a preferred technical scheme of the invention, but is not a limitation of the technical scheme provided by the invention, and the technical purpose and beneficial effects of the invention can be better achieved and realized through the following technical scheme.
According to the preferred technical scheme, the interdigital transducer comprises two bus bars which are oppositely arranged, the two bus bars are respectively connected with finger bars, the finger bars extend towards the bus bars on the opposite sides and keep a gap with the bus bars on the opposite sides, and therefore the interdigital transducer comprises an active area formed by alternately arranging the finger bars, and gap areas respectively formed at two ends of the active area.
In the orthographic projection of the functional layer, the center of the elliptical metal ring is arranged in the active area, the edge of the inner ellipse of the elliptical metal ring does not exceed the active area in the extending direction parallel to the finger strips, and the edge of the outer ellipse of the elliptical metal ring does not exceed the gap area.
In the orthographic projection to the functional layer, the center of the elliptical metal ring coincides with the center of the active region, the main axis of the inner ellipse of the elliptical metal ring is parallel to the finger, and the length of the main axis of the inner ellipse is equal to the length of the active region.
As a preferred embodiment of the invention, the reflector is arranged opposite to the active region and the gap region on both sides in the orthographic projection to the functional layer and in the extending direction parallel to the bus bar, the edge of the inner ellipse of the elliptical metal ring does not exceed the active region or exceeds the active region and covers the reflector, and the edge of the outer ellipse of the elliptical metal ring does not exceed the reflector.
In the present invention, the elliptical metal ring modulates the sound velocity of the gap region of the interdigital transducer, and therefore, its geometric and dimensional characteristics need to be matched to the interdigital transducer, in particular, the active region and the gap region. The placement position of the elliptical metal ring, the half axis length (large radius) of the main shafts of the inner ellipse and the outer ellipse, the half axis length (small radius) of the secondary shaft, the width of the elliptical metal ring and the like are reasonably selected and adjusted according to actual design and needs, so that the structural effectiveness of the elliptical metal ring is realized, and the effects of restraining a stray mode and reducing energy leakage are ensured.
The size of the gap between the oval metal ring and the busbar, i.e. the distance between the edge of the outer oval and the edge of the busbar, varies with the shape and size of the outer oval at a specific position in the orthographic projection onto the functional layer in the direction parallel to the extension of the finger. Moreover, in the direction parallel to the extension of the finger, the chord length of the internal ellipse of the elliptical metal ring is equal to the effective aperture length of the acoustic wave resonator, which is seen to vary with the internal ellipse shape and size at a specific location. When the center of the inner ellipse coincides with the center of the active region, and the two ends of the main axis of the inner ellipse reach the junction of the active region and the gap region (i.e. the ends of the finger strips), respectively, the effective aperture length reaches the maximum value, and at this time, the effective aperture length is equal to the half axis length of the main axis of the inner ellipse of the elliptical metal ring.
The acoustic wave resonator also comprises an edge metal strip, wherein the edge metal strip is arranged above the interdigital transducer and is provided with a second interval with the plane on which the surface of the interdigital transducer is positioned.
In the orthographic projection of the functional layer, the center of the edge metal strip is arranged in the gap area, one side edge of the edge metal strip is attached to one side edge of the bus in the extending direction parallel to the bus, and the edge of the edge metal strip does not exceed the gap area and is not contacted with the elliptical metal ring in the extending direction parallel to the finger strip.
As a preferable technical scheme of the invention, in the extending direction parallel to the finger strips, the width of the edge metal strips is 0.5-1 lambda, lambda is the wavelength of the surface acoustic wave, and more preferably 0.7-0.75 lambda, which is the optimal range for realizing spurious-free frequency response.
As a preferred embodiment of the invention, the edge metal strip extends to the edge of the gap region or beyond the gap region and into the reflector in a front projection onto the functional layer and parallel to the extension direction of the busbar.
As a preferable technical scheme of the invention, the edge metal strips and the elliptical metal rings are arranged on the same plane, and the first interval is equal to the second interval.
In the invention, the edge metal strip can assist the elliptical metal ring to play a role in modulating the sound velocity of the gap region of the interdigital transducer, so that the dimensional parameters of the edge metal strip need to be matched with the interdigital transducer and the elliptical metal ring. The length, width and spacing distance between the edge metal strip and the elliptical metal ring are reasonably selected and adjusted according to actual design and needs so as to realize the structural effectiveness and ensure that the corresponding effect is achieved.
As a preferable technical scheme of the invention, the elliptical metal ring is arranged on the surface of the temperature compensation layer, or is embedded into the temperature compensation layer, or is completely embedded into the temperature compensation layer.
As a preferable technical scheme of the invention, the part of the elliptical metal ring exposed outside the temperature compensation layer is filled with temperature compensation material in the inner ellipse of the elliptical metal ring and/or heavy dielectric material is arranged outside the outer ellipse of the elliptical metal ring.
As a preferable technical scheme of the invention, the temperature compensation material is the same as the temperature compensation layer, and the dielectric material has acoustic impedance different from the temperature compensation layer and has density larger than that of the temperature compensation layer.
As a preferred embodiment of the present invention, the heavy dielectric material includes at least one of hafnium oxide, silicon nitride, barium strontium titanate, aluminum oxide, or titanium dioxide.
In the present invention, the elliptical metal ring may be disposed entirely on the surface of the temperature compensation layer, i.e., the first space is equal to the thickness of the temperature compensation layer, or embedded in the temperature compensation layer to expose at least the top surface, further, or entirely embedded in the temperature compensation layer without exposing any surface. For an exposed elliptical metal ring, further comprising an exposed coplanar edge metal strip, the blank area of this layer may be filled with dielectric material. The choice of dielectric material can affect the performance of the acoustic wave resonator, including its temperature stability and frequency response.
As a preferred embodiment of the present invention, in the orthographic projection onto the functional layer, the edge of the temperature compensation layer is reduced to the edge of the outer ellipse of the elliptical metal ring.
According to the preferred technical scheme, the temperature compensation layer and the piezoelectric substrate are opposite in temperature elasticity coefficient, the temperature compensation layer and the elliptical metal ring are opposite in density property, and the elliptical metal ring, the edge metal strips, the reflector and the interdigital transducer are the same in material.
As a preferable technical scheme of the invention, the material of the elliptical metal ring comprises at least one of aluminum, copper, gold, tungsten, molybdenum or silver.
As a preferable technical scheme of the invention, the material of the temperature compensation layer comprises silicon dioxide.
In a preferred embodiment of the present invention, the material of the piezoelectric substrate includes at least one of lithium niobate, lithium tantalate, and quartz.
In the present invention, the opposite density property of the temperature compensation layer and the elliptical metal ring means that when the temperature compensation layer is made of a material with a larger density, the metal material density of the elliptical metal ring should be smaller, and when the metal material of the elliptical metal ring is made of a heavy metal with a larger density (such as copper and gold), the temperature compensation layer should be made of a material with a smaller density, such as silicon dioxide.
As a preferable technical scheme of the invention, the interdigital transducer has 10-1000 IDT periods.
As a preferable technical scheme of the invention, the reflector is provided with 10-30 pairs of reflecting grids.
It should be noted that, the specific materials and structures of the conventional TC-SAW structure (piezoelectric material, interdigital transducer and reflector) in the acoustic wave resonator are not particularly limited in the present invention, and it should be understood that the present invention is intended to follow the gist of the present invention by providing an elliptical metal ring in the TC-SAW, which can adjust the sound velocity of the gap region, improve the waveguide capability, suppress the spurious mode and improve the quality factor of the resonator.
In a second aspect, the present invention provides a filter comprising an acoustic wave resonator according to the first aspect.
Compared with the prior art, the invention has at least the following beneficial effects:
According to the invention, the elliptical metal ring with adjustable geometric characteristics and size characteristics is arranged above the interdigital transducer of the TC-SAW, so that the sound wave speed or dispersion characteristic in a gap area is changed, the structure not only inhibits a stray mode, but also is beneficial to limiting energy in a resonator, reduces lateral energy leakage, realizes spurious-free signal response and clearer signal output, and effectively improves the quality factor Q value. Higher Q values mean lower insertion loss and are widely used for high frequency applications.
Drawings
FIG. 1 is a schematic perspective view of an acoustic wave resonator according to the present invention;
FIG. 2 shows a top view of the acoustic wave resonator of FIG. 1;
fig. 3 shows an enlarged view of the dashed area M 1 in fig. 2;
FIG. 4 illustrates a cross-sectional view taken along section line N 1-N1 in FIG. 3;
FIG. 5 illustrates a cross-sectional view taken along section line N 2-N2 in FIG. 3;
Fig. 6 shows an enlarged view of the dashed area M 2 in fig. 5;
FIG. 7 shows a top view of another acoustic wave resonator of the present invention;
Fig. 8 shows an enlarged view of the dashed area M 3 in fig. 7;
FIG. 9 illustrates a cross-sectional view taken along section line N 3-N3 in FIG. 8;
FIG. 10 is a schematic perspective view of another acoustic wave resonator according to the present invention;
FIG. 11 shows a top view of the acoustic wave resonator of FIG. 10;
Fig. 12 shows an enlarged view of the dashed area M 4 in fig. 11;
FIG. 13 illustrates a cross-sectional view of FIG. 12 along section line N 4-N4;
Fig. 14 shows an enlarged view of the dashed area M 5 in fig. 13;
FIG. 15 shows a top view of another acoustic wave resonator of the present invention;
fig. 16 shows an enlarged view of the dashed area M 6 in fig. 15;
FIG. 17 shows a cross-sectional view of FIG. 16 along section line N 5-N5;
FIG. 18 illustrates a cross-sectional view of another acoustic wave resonator of the present invention taken along section line N 5-N5;
FIG. 19 illustrates a cross-sectional view of another acoustic wave resonator of the present invention taken along section line N 5-N5;
FIG. 20 illustrates a cross-sectional view of another acoustic wave resonator of the present invention taken along section line N 5-N5;
Fig. 21 shows an enlarged view of a dotted line area M 7 in fig. 20;
FIG. 22 shows a top view of another acoustic wave resonator of the present invention;
FIG. 23 shows a cross-sectional view of FIG. 22 along section line N 6-N6;
FIG. 24 shows a top view of another acoustic wave resonator of the present invention;
FIG. 25 illustrates a cross-sectional view of FIG. 24 along section line N 7-N7;
FIG. 26 shows a top view of another acoustic wave resonator of the present invention;
FIG. 27 shows a cross-sectional view of FIG. 26 along section line N 8-N8;
FIG. 28 shows a top view of another acoustic wave resonator of the present invention;
FIG. 29 shows a cross-sectional view of FIG. 28 along section line N 9-N9;
FIG. 30 shows a top view of another acoustic wave resonator of the present invention;
fig. 31 shows a cross-sectional view of fig. 30 along the section line N 10-N10.
Fig. 32 shows the effect of an elliptical metal ring on the resonator vibration curve.
In the figure, 10-piezoelectric substrate, 20-interdigital transducer, 21-busbar, 21A-first busbar, 21B-second busbar, 22-finger, 22A-first finger, 22B-second finger, 23-gap region, 23A-first gap region, 23B-second gap region, 24-active region, 30-reflector, 30A-first reflector, 30B-second reflector, 31-reflective grid busbar, 32-reflective grid, 40-temperature compensation layer, 41-temperature compensation material, 50-elliptical metal ring, 50A-part elliptical metal ring closer to second busbar, 50B-part elliptical metal ring closer to first busbar, 60-edge metal strip, 60A-first edge metal strip, 60B-second edge metal strip, 70-heavy dielectric material.
Detailed Description
The technical scheme of the invention is further described by the following specific embodiments. It will be apparent to those skilled in the art that the examples are merely to aid in understanding the invention and are not to be construed as a specific limitation thereof.
In some specific embodiments, as shown in fig. 1, the invention provides an acoustic wave resonator, which comprises a piezoelectric substrate 10, a functional layer and a temperature compensation layer 40, wherein the piezoelectric substrate 10, the functional layer and the temperature compensation layer are sequentially stacked, the functional layer comprises an interdigital transducer 20 and reflectors 30 which are oppositely arranged at two sides of the interdigital transducer 20, the acoustic wave resonator further comprises an elliptical metal ring 50, the elliptical metal ring 50 is arranged above the interdigital transducer 20, and a first interval g 1 >0 is arranged on a plane which is located on the surface of the interdigital transducer 20, as shown in fig. 6.
In one embodiment, the piezoelectric substrate 10, the interdigital transducer 20, the reflector 30, and the temperature compensation layer 40 have respective widths in an X direction (or first dimension direction), respective lengths in a Y direction (or second dimension direction), and respective thicknesses in a Z direction (or third dimension direction), respectively, and the X direction, the Y direction, and the Z direction form a three-dimensional coordinate space.
In some specific embodiments, as shown in fig. 1, the interdigital transducer 20 includes two bus bars 21 disposed opposite to each other, and two finger bars 22 are connected to the two bus bars 21, and the finger bars 22 extend toward the bus bars 21 on opposite sides but leave gaps therebetween, so that the interdigital transducer 20 includes active regions 24 formed by alternately arranging the finger bars 22, and gap regions 23 formed at both ends of the active regions 24, respectively. That is, a section of the finger 22 connected to the bus bar 21 is a start end, and the other end of the bus bar 21 facing the opposite side is an end, and the end and the bus bar 21 on the opposite side form a gap. The interdigital transducer 20 covers an IDT region including a bus bar region covered by a bus bar 21, and the gap region 23 and the active region 24.
In one embodiment, as shown in fig. 2, the bus bar 21 includes a first bus bar 21A and a second bus bar 21B, where the first bus bar 21A and the second bus bar 21B extend along the X direction and are arranged at opposite intervals in the Y direction, and the dimensions of the first bus bar 21A and the second bus bar 21B in the X direction are length and the dimensions of the first bus bar 21A and the second bus bar 21B in the Y direction are width.
In one embodiment, as shown in fig. 2, the first bus bar 21A is connected to a first finger 22A, and the first finger 22A extends toward the second bus bar 21B along the Y direction, but does not contact the second bus bar 21B, so as to form a first gap region 23A, where the length of the first gap region 23A is w 1, as shown in fig. 4; the second bus bar 21B is connected with a second finger 22B, the second finger 22B extends towards the first bus bar 21A along the Y direction, but does not contact the first bus bar 21A, a second gap region 23B is formed, the length of the second gap region 23B is w 2 as shown in fig. 5, the dimensions of the first finger 22A and the second finger 22B along the X direction are lengths and widths along the Y direction, the region between the first gap region 23A and the second gap region 23B forms an active region 24, the length is w 3 as shown in fig. 4 and 5, the dimensions of the first gap region 23A, the second gap region 23B and the active region 24 along the Y direction are widths, the first finger 22A and the second finger 22B are alternately arranged along the X direction and do not contact each other, and the distance from the edge of one first finger 22A to the edge of the nearest neighboring first finger 22B along the X direction is a cycle of the same length of an IDT or a pair of IDTs 35, i.e. a cycle of IDT or a transducer.
In one embodiment, w 1=w2.
In one embodiment, the IDT period number of the interdigital transducer 20 is 10 to 1000, for example, 10, 30, 50, 80, 100, 200, 300, 400, 500, 600, 700, 800, 900 or 1000, etc., but not limited to the recited values, and other non-recited values within the above-mentioned range are also applicable.
In some embodiments, the reflectors 30 are disposed opposite each other on both sides of the active region 24 and the gap region 23, as shown in fig. 1 and 2.
In one embodiment, the reflectors 30 are respectively arranged opposite to each other on two sides of the interdigital transducer 20 along the X direction to form a first reflector 30A and a second reflector 30B, as shown in fig. 8 and 9, each of the first reflector 30A and the second reflector 30B includes a reflective grating busbar 31 which is arranged opposite to each other, the reflective grating busbar 31 extends along the X direction, one side edge is on the same straight line with one side edge of the busbar 21, which is close to the finger 22, reflective grating strips 32 extending along the Y direction are connected between the two opposite reflective grating busbars 31, that is, the reflective grating strips 32 are arranged in parallel with the finger 22, the reflective grating strips 32 are alternately arranged along the X direction and are not in contact with each other, a distance from the edge of one reflective grating strip 32 to the corresponding edge on the same side of the nearest adjacent reflective grating strip 32 along the X direction is a length p 2 of one reflective grating period, and one reflective grating period includes a pair of reflective grating strips 32.
In one embodiment, the first reflector 30A and the second reflector 30B each have 10 to 30 pairs of reflective grating bars 32, for example, 10 pairs, 13 pairs, 15 pairs, 18 pairs, 20 pairs, 22 pairs, 24 pairs, 26 pairs, 28 pairs, or 30 pairs, but are not limited to the recited values, and other non-recited values within the above ranges are equally applicable.
In some embodiments, as shown in FIG. 6, the elliptical metal ring 50 has a dimension in the Z direction of thickness, denoted as h 1, and the distance between the outer ellipse and the inner ellipse along the axial length of the center of the elliptical metal ring 50 is the width of the elliptical metal ring 50, denoted as d 1, as shown in FIG. 6.
In one embodiment, the width d 1 of the elliptical metal ring 50 remains constant in the plane formed by the X-direction and the Y-direction.
In some embodiments, the center of the elliptical metal ring 50 is disposed at the active region 24 in the orthographic projection to the functional layer, and the edge of the inner ellipse of the elliptical metal ring 50 does not exceed the active region 24 and the edge of the outer ellipse of the elliptical metal ring 50 does not exceed the gap region 23 in the Y-direction. That is, as shown in fig. 3 and 8, in the elliptical metal ring 50, a portion of the elliptical metal ring closer to the second bus bar 21B is denoted as 50A, and a portion of the elliptical metal ring closer to the first bus bar 21A is denoted as 50B. In the orthographic projection onto the functional layer, the distance between the edge of the outer ellipse of the partial elliptical metal ring 50A and the edge of the adjacent second busbar 21B is s 1, the distance between the edge of the outer ellipse of the partial elliptical metal ring 50B and the edge of the adjacent first busbar 21A is s 2, the distance between the edge of the inner ellipse of the partial elliptical metal ring 50A and the edge of the inner ellipse of the partial elliptical metal ring 50B is s 3,s3, i.e. the chord length of the inner ellipse of the elliptical metal ring 50 in the Y direction, s 1＞0、s2 >0 and s3 is less than or equal to w 3.
In one embodiment, s 1=s2.
In one embodiment, in the orthographic projection onto the functional layer, the center of the elliptical metal ring 50 coincides with the center of the active region 24, and the major axis of the inner ellipse of the elliptical metal ring 50 is parallel to the finger 22, and the length of the major axis is equal to the length of the active region 24, i.e., at this time, s 3=w3 at the location of the major axis.
In some specific embodiments, as shown in fig. 7, in the front projection to the functional layer, the edge of the inner ellipse of the elliptical metal ring 50 does not extend beyond the active region 24 or beyond the active region 24 and into the reflector 30 in the X direction, and the edge of the outer ellipse of the elliptical metal ring 50 does not extend beyond the reflector 30. That is, the chord length of the outer ellipse of the elliptical metal ring 50 in the X direction is less than or equal to the width of the interdigital transducer 20, or greater than the width of the interdigital transducer 20 but less than or equal to the maximum distance between the edges of the pair of reflectors 30.
In some specific embodiments, as shown in fig. 10, the acoustic wave resonator further includes an edge metal strip 60, where the edge metal strip 60 is disposed above the interdigital transducer 20 and has a second spacing g 2 >0 from a plane on which the surface of the interdigital transducer 20 is located, as shown in fig. 14.
In one embodiment, the center of the edge metal strip 60 is disposed in the gap region 23 in the orthographic projection to the functional layer, one side edge of the edge metal strip 60 is attached to one side edge of the bus bar 21 in the extending direction parallel to the bus bar 21, and the edge of the edge metal strip 60 does not exceed the gap region 23 in the extending direction parallel to the finger strip 22 and is not in contact with the elliptical metal ring 50.
In one embodiment, as shown in fig. 11 to 14, the edge metal strip 60 includes a first edge metal strip 60A and a second edge metal strip 60B, that is, in the orthographic projection onto the functional layer, the distance between the first edge metal strip 60A and the edge of the outer ellipse of the partial elliptical metal ring 50B is s5, the distance between the second edge metal strip 60B and the edge of the outer ellipse of the partial elliptical metal ring 50A is s4, s4>0, s5>0, and the dimension in the Y direction is a width, denoted as d 2, the dimension in the Z direction is a thickness, denoted as h 2, as shown in fig. 14, and the distance between the first edge metal strip 60A and the edge of the outer ellipse of the partial elliptical metal ring 50B is s4, s4>0, s5>0, as shown in fig. 12.
In one embodiment of the present invention, in one embodiment, s4=s5.
In one embodiment, the widths d 2 of the first edge metal strip 60A and the second edge metal strip are respectively 0.5 to 1 λ, for example, 0.5λ、0.52λ、0.54λ、0.56λ、0.58λ、0.6λ、0.62λ、0.64λ、0.66λ、0.68λ、0.7λ、0.705λ、0.71λ、0.715λ、0.72λ、0.725λ、0.73λ、0.735λ、0.74λ、0.745λ、0.75λ、0.78λ、0.8λ、0.82λ、0.83λ、0.85λ、0.88λ、0.9λ、0.92λ、0.95λ、0.98λ, 1 λ, or the like, λ is a wavelength of a surface acoustic wave, and more preferably 0.7 to 0.75λ, which is an optimal range for achieving spurious-free frequency response, but the present invention is not limited to the above-mentioned values, and other non-mentioned values in the above-mentioned value ranges are equally applicable.
In one embodiment, the widths d 2 of the first edge metal strip 60A and the second edge metal strip are the same.
In some embodiments, as shown in fig. 15, in the orthographic projection onto the functional layer, the edge metal strip 60 extends to the edge of the gap region 23 or beyond the gap region 23 and into the reflector 30 in the X-direction. That is, the dimensions of the first edge metal strip 60A and the second edge metal strip 60B in the X direction are lengths that are equal to or less than the width of the interdigital transducer 20 or greater than the width of the interdigital transducer 20 but equal to or less than the maximum distance between the edges of the pair of reflectors 30.
In one embodiment, the first edge metal strip 60A and the second edge metal strip 60B are the same length and equal to the maximum chord length of the outer ellipse of the elliptical metal ring 50 in the X direction.
In one embodiment, the edge metal strip 60 is co-planar with the oval metal ring 50, and the first spacing g 1 is equal to the second spacing g 2, i.e., g 1=g2.
In one embodiment, g 1=g2 =0.01 to 0.1λ, for example, may be 0.01λ, 0.02λ, 0.03λ, 0.04 λ, 0.05λ, 0.06λ, 0.07 λ, 0.08λ, 0.09 λ, or 0.1λ, etc., preferably 0.015 to 0.09 λ, more preferably 0.03 to 0.06 λ, and not limited to the above-mentioned values, but other non-cited values within the above-mentioned value range are equally applicable.
In some embodiments, the elliptical metal ring 50 is disposed on the surface of the temperature compensation layer 40 (as shown in fig. 1-17), embedded in the temperature compensation layer 40 (as shown in fig. 18 and 19), or fully embedded in the temperature compensation layer 40 (as shown in fig. 20 and 21).
In one embodiment, for the portion of the elliptical metal ring 50 exposed outside of the temperature compensation layer 40, the inner ellipse of the elliptical metal ring 50 is filled with a temperature compensation material 41 (as shown in fig. 22 and 23) and/or a heavy dielectric material 70 (as shown in fig. 24-27) is disposed outside of the outer ellipse of the elliptical metal ring 50.
In one embodiment, the temperature compensating material 41 is the same as the temperature compensating layer 40, and the heavy dielectric material 70 has an acoustic impedance different from the temperature compensating layer 40 and a density greater than the temperature compensating layer 40.
In one embodiment, the heavy dielectric material 70 includes at least one of hafnium oxide, silicon nitride, barium strontium titanate, aluminum oxide, or titanium dioxide.
In one embodiment, as shown in fig. 28-31, in the orthographic projection onto the functional layer, the edges of the temperature compensation layer 40 are reduced to the edges of the outer ellipse of the elliptical metal ring 50.
In some embodiments, the temperature compensation layer 40 has a temperature coefficient of elasticity opposite to that of the piezoelectric substrate 10, the temperature compensation layer 40 has a density opposite to that of the elliptical metal ring 50, and the elliptical metal ring 50, the edge metal strip 60, the reflector 30, and the interdigital transducer 20 are made of the same material.
In one embodiment, the material of the elliptical metal ring 50 comprises at least one of aluminum, copper, gold, tungsten, molybdenum, or silver.
In one embodiment, the material of the temperature compensation layer 40 includes silicon dioxide.
In one embodiment, the material of the piezoelectric substrate 10 includes at least one of lithium niobate, lithium tantalate, or quartz.
In some embodiments, the invention provides a filter comprising the acoustic wave resonator provided in the above embodiments.
Example 1
In the acoustic wave resonator provided in the embodiment, the number 100 is shown in fig. 1 to 6, in the acoustic wave resonator, the temperature compensation layer 40 covers the whole functional layer, the elliptical metal ring 50 is disposed on the surface of one side of the temperature compensation layer 40 away from the functional layer and is exposed to air, in the orthographic projection to the functional layer, the center of the elliptical metal ring 50 coincides with the center of the interdigital transducer 20, the major axis of the inner ellipse of the elliptical metal ring 50 coincides with the major axis of the outer ellipse and is parallel to the Y direction, wherein the axial length of the major axis of the inner ellipse is equal to the length of the active region 24, so that the two end edges of the major axis of the inner ellipse coincide with the edges of the active region 24, and the elliptical metal ring 50 has a proper width, so that the two end edges of the major axis of the outer ellipse are respectively located in the first gap region 23A and the second gap region 23B and respectively remain the same size gap as the adjacent first bus 21A and the second bus 21B, the axial length of the major axis of the outer ellipse of the elliptical metal ring 50 coincides with the width of the minor axis 24, and the minor axis of the outer ellipse 24 coincides with the edges of the active region 24, and the two end edges of the inner ellipse are only covered by the metal ring 50.
Example 2
In this embodiment, as shown in fig. 7 to 9, the acoustic wave resonator 200 provided in the foregoing embodiment is different from the acoustic wave resonator in embodiment 1 in that, in the front projection onto the functional layer, the minor axis of the outer ellipse of the elliptical metal ring 50 has an axial length exceeding the active region 24, one end edge coincides with the edge of the first reflector 30A away from the interdigital transducer 20, and the other end edge coincides with the edge of the second reflector 30B away from the interdigital transducer 20, so that the two end edges of the minor axis of the inner ellipse of the elliptical metal ring 50 are located in the first reflector 30A and the second reflector 30B, respectively, and in this case, the elliptical metal ring 50 covers the IDT region and the reflectors. Except for the above, the other conditions were exactly the same as in example 1.
Example 3
The acoustic wave resonator according to the present embodiment is different from the acoustic wave resonator according to embodiment 1 in that the acoustic wave resonator further includes the edge metal strip 60 provided in the foregoing embodiment, specifically includes the first edge metal strip 60A and the second edge metal strip 60B disposed on the same plane as the elliptical metal ring 50 and having the same thickness, the first edge metal strip 60A and the second edge metal strip 60B have suitable widths so that the gaps having the same size are maintained between the first edge metal strip 60A and the second edge metal strip 60B and the elliptical metal ring 50, and the lengths of the first edge metal strip 60A and the second edge metal strip 60B are equal to the widths of the active regions 24, as shown in fig. 10 to 14. At this time, the edge metal strip 60 covers the gap region 23. Except for the above, the other conditions were exactly the same as in example 1.
Example 4
This embodiment adopts an acoustic wave resonator 400 provided in the foregoing embodiment, as shown in fig. 15 to 17, where the acoustic wave resonator is different from the acoustic wave resonator in embodiment 1 in that the elliptical metal ring 50 is the same as the acoustic wave resonator in embodiment 2, the edge metal strip 60 is based on the scheme of the acoustic wave resonator in embodiment 3, and the length of the first edge metal strip 60A and the length of the second edge metal strip 60B are both adjusted to be equal to the length of the minor axis of the outer ellipse of the elliptical metal ring 50, that is, one end of the edge metal strip 60 coincides with the edge of the first reflector 30A away from the interdigital transducer 20, and the other end coincides with the edge of the second reflector 30B away from the interdigital transducer 20. At this time, an edge metal strip 60 covers the gap region 23 and the reflector 30.
Example 5
In this example, the acoustic wave resonator according to the above embodiment is shown in fig. 18, and the acoustic wave resonator is based on the acoustic wave resonator according to example 3, and the difference between the acoustic wave resonator and the acoustic wave resonator is that the elliptical metal ring 50 and the edge metal strip 60 are both half-embedded in the temperature compensation layer 40, and the non-embedded portion is exposed to air. Except for the above, the other conditions were exactly the same as in example 3.
Example 6
This example adopts an acoustic wave resonator according to the above embodiment, and the number 320 is shown in fig. 19, and the acoustic wave resonator is based on the acoustic wave resonator in example 3, and is different from the acoustic wave resonator in that the elliptical metal ring 50 and the edge metal strip 60 are all embedded in the temperature compensation layer 40, and the non-embedded top surface portion is exposed to air. Except for the above, the other conditions were exactly the same as in example 3.
Example 7
In this example, the acoustic wave resonator according to the above embodiment is shown in fig. 20 and 21, and the acoustic wave resonator according to example 3 is different from the acoustic wave resonator in that the elliptical metal ring 50 and the edge metal strip 60 are all embedded in the temperature compensation layer 40, and there is no exposed portion. Except for the above, the other conditions were exactly the same as in example 3.
Example 8
In this example, as shown in fig. 22 and 23, the acoustic wave resonator 301 provided in the foregoing embodiment is based on the acoustic wave resonator in example 3, and is different from the acoustic wave resonator in that the temperature compensation material 41 is filled in the inner ellipse of the elliptical metal ring 50, the thickness of the temperature compensation material 41 is equal to the thickness h 1 of the elliptical metal ring 50, and the outer region of the outer ellipse is exposed to air. Except for the above, the other conditions were exactly the same as in example 3.
Example 9
In this embodiment, the acoustic wave resonator provided in the foregoing embodiment is denoted by reference numeral 302, and as shown in fig. 24 and 25, the acoustic wave resonator is based on the acoustic wave resonator in embodiment 3, and is different from the acoustic wave resonator in that a heavy dielectric material 70 is disposed in an outer area of the outer ellipse of the elliptical metal ring 50, and the thickness of the heavy dielectric material 70 is equal to the thickness h 1 of the elliptical metal ring 50. Except for the above, the other conditions were exactly the same as in example 3.
Example 10
In this example, as shown in fig. 26 and 27, the acoustic wave resonator 303 provided in the foregoing embodiment is different from the acoustic wave resonator in example 3 in that the temperature compensation material 41 is filled in the inner ellipse of the elliptical metal ring 50, the thickness of the temperature compensation material 41 is equal to the thickness h 1 of the elliptical metal ring 50, and in that a heavy dielectric material 70 is disposed in the outer region of the outer ellipse of the elliptical metal ring 50, and the thickness of the heavy dielectric material 70 is equal to the thickness h 1 of the elliptical metal ring 50. Except for the above, the other conditions were exactly the same as in example 3.
Example 11
This example adopts an acoustic wave resonator provided by the above embodiment, and the number 101, as shown in fig. 28 and 29, is based on the acoustic wave resonator in example 1, and is different from the acoustic wave resonator in that, in the orthographic projection onto the functional layer, the edge of the temperature compensation layer 40 is reduced to the edge of the outer ellipse of the elliptical metal ring 50, and follows the outer ellipse. Except for the above, the other conditions were exactly the same as in example 3.
Example 12
In this embodiment, the acoustic wave resonator 102 provided in the foregoing embodiment is, as shown in fig. 30 and 31, based on the acoustic wave resonator in embodiment 11, different from the acoustic wave resonator in that the temperature compensation material 41 is filled in the inner ellipse of the elliptical metal ring 50, the thickness of the temperature compensation material 41 is equal to the thickness h 1 of the elliptical metal ring 50, and simultaneously, a heavy dielectric material 70 is disposed in an outer area of the outer ellipse of the elliptical metal ring 50, and the heavy dielectric material 70 covers the top surface of the elliptical metal ring 50. Except for the above, the other conditions were exactly the same as in example 11.
Comparative example 1
This comparative example adopts an acoustic wave resonator, no. CP1, which does not contain the elliptical metal ring 50 as compared with the acoustic wave resonator in example 1. Except for the above, the other conditions were exactly the same as in example 1.
Comparative example 2
This comparative example adopts an acoustic wave resonator, no. CP2, which does not contain the elliptical metal ring 50 and only the edge metal strip 60 is provided, as compared with the acoustic wave resonator in example 3. Except for the above, the other conditions were exactly the same as in example 1.
FIG. 32 shows the effect on the vibration curve of an acoustic wave resonator by adding an elliptical metal ring in the acoustic wave resonator according to an embodiment of the present invention. It can be seen that the vibration distribution follows the shape of an elliptical metal ring, where most of the vibration is concentrated in the center of the resonator, and when it is far from the center in both directions, the vibration is reduced.
The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the scope of the technical concept of the present invention, and all the simple modifications belong to the protection scope of the present invention.
In addition, the specific features described in the above embodiments may be combined in any suitable manner, and in order to avoid unnecessary repetition, various possible combinations are not described further.
Moreover, any combination of the various embodiments of the invention can be made without departing from the spirit of the invention, which should also be considered as disclosed herein.
Claims (10)
1. The acoustic wave resonator is characterized by comprising a piezoelectric substrate (10), a functional layer and a temperature compensation layer (40) which are sequentially stacked, wherein the functional layer comprises an interdigital transducer (20) and reflectors (30) which are oppositely arranged at two sides of the interdigital transducer (20);
The acoustic wave resonator further comprises an elliptical metal ring (50), wherein the elliptical metal ring (50) is arranged above the interdigital transducer (20) and has a first interval g 1 with the plane on which the surface of the interdigital transducer (20) is located.
2. Acoustic resonator according to claim 1, characterized in that the interdigital transducer (20) comprises two oppositely arranged bus bars (21), two of the bus bars (21) being connected with finger strips (22) respectively, the finger strips (22) extending towards the bus bars (21) on opposite sides but leaving a gap with them, such that the interdigital transducer (20) comprises active areas (24) formed by an alternating arrangement of finger strips (22), and gap areas (23) formed respectively at both ends of the active areas (24);
In an orthographic projection onto the functional layer, the center of the elliptical metal ring (50) is arranged at the active region (24), the edge of the inner ellipse of the elliptical metal ring (50) does not exceed the active region (24) in the extending direction parallel to the finger strip (22), and the edge of the outer ellipse of the elliptical metal ring (50) does not exceed the gap region (23);
In the orthographic projection to the functional layer, the center of the elliptical metal ring (50) coincides with the center of the active region (24), and the major axis of the inner ellipse of the elliptical metal ring (50) is parallel to the finger (22), and the length of the major axis is equal to the length of the active region (24).
3. Acoustic resonator according to claim 2, characterized in that in the orthographic projection towards the functional layer and in the direction of extension parallel to the busbar (21) the reflectors (30) are arranged opposite on both sides of the active area (24) and the gap area (23), the edges of the inner ellipse of the elliptical metal ring (50) do not exceed the active area (24) or exceed the active area (24) and cover into the reflectors (30), the edges of the outer ellipse of the elliptical metal ring (50) do not exceed the reflectors (30).
4. The acoustic wave resonator according to claim 2 or 3, characterized in that the acoustic wave resonator further comprises an edge metal strip (60), wherein the edge metal strip (60) is arranged above the interdigital transducer (20) and has a second spacing g 2 from the plane in which the surface of the interdigital transducer (20) is located;
in the orthographic projection to the functional layer, the center of the edge metal strip (60) is arranged in the gap area (23), one side edge of the edge metal strip (60) is attached to one side edge of the bus bar (21) in the extending direction parallel to the bus bar (21), and the edge of the edge metal strip (60) does not exceed the gap area (23) in the extending direction parallel to the finger strip (22) and is not contacted with the elliptical metal ring (50);
in the extending direction parallel to the finger strips (22), the width of the edge metal strip (60) is 0.5-1 lambda, and lambda is the wavelength of the surface acoustic wave.
5. Acoustic resonator according to claim 4, characterized in that in an orthographic projection to the functional layer and in an extension direction parallel to the busbar (21) the edge metal strip (60) extends to the edge of the gap region (23) or beyond the gap region (23) and into the reflector (30).
6. The acoustic wave resonator according to claim 4, characterized in that the edge metal strip (60) is arranged coplanar with the elliptical metal ring (50) and the first spacing g 1 is equal to the second spacing g 2.
7. A sonic resonator as claimed in any one of claims 1 to 3, characterized in that the elliptical metal ring (50) is provided on the surface of the temperature compensation layer (40), or embedded in the temperature compensation layer (40), or entirely embedded in the temperature compensation layer (40);
Filling the inner ellipse of the elliptical metal ring (50) with a temperature compensation material (41) and/or disposing a heavy dielectric material (70) outside the outer ellipse of the elliptical metal ring (50) on the portion of the elliptical metal ring (50) exposed outside the temperature compensation layer (40);
the temperature compensation material (41) is the same as the temperature compensation layer (40), the heavy dielectric material (70) has acoustic impedance different from the temperature compensation layer (40) and has a density greater than the temperature compensation layer (40);
The heavy dielectric material (70) includes at least one of hafnium oxide, silicon nitride, barium strontium titanate, aluminum oxide, or titanium dioxide.
8. A sound resonator according to claim 2 or 3, characterized in that in an orthographic projection onto the functional layer the edges of the temperature compensation layer (40) are reduced to the edges of the outer ellipse of the elliptical metal ring (50).
9. The acoustic wave resonator according to claim 4, characterized in that the temperature compensation layer (40) has an opposite temperature coefficient of elasticity to the piezoelectric substrate (10), the temperature compensation layer (40) has an opposite density property to the elliptical metal ring (50), and the elliptical metal ring (50), the edge metal strip (60), the reflector (30) and the interdigital transducer (20) are the same material;
the elliptical metal ring (50) is made of at least one of aluminum, copper, gold, tungsten, molybdenum or silver;
the material of the temperature compensation layer (40) comprises silicon dioxide;
the piezoelectric substrate (10) is made of at least one of lithium niobate, lithium tantalate or quartz.
10. A filter comprising an acoustic resonator according to any one of claims 1 to 9.
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