CN119382650A - A method, device, equipment and medium for adjusting the frequency of a filter - Google Patents
A method, device, equipment and medium for adjusting the frequency of a filter Download PDFInfo
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Abstract
The invention discloses a frequency trimming method, a device, equipment and a medium of a filter, wherein the frequency trimming method of the filter comprises the steps of obtaining target position information of a plurality of target filters in a target wafer; the target filters comprise target frequency modulation layers, the thicknesses of the target frequency modulation layers of the target filters are equal, etching thicknesses of the target frequency modulation layers corresponding to the target filters are determined according to at least two preset frequencies of the target filters, etching time corresponding to the target filters is determined according to the target position information and the etching thicknesses, and ion beams are used for etching the target frequency modulation layers corresponding to the target filters according to the target position information and the etching time. By adopting the technical means, the frequency values of the plurality of target filters in the target wafer can be ensured to be the same, and then the yield and the production efficiency of the target wafer can be improved.
Description
Technical Field
The present invention relates to the field of filter technologies, and in particular, to a method, an apparatus, a device, and a medium for frequency trimming of a filter.
Background
The surface acoustic wave filter is applied to electronic systems of radar, communication and other weaponry, is a key component of the system, and along with the requirements of higher precision and higher frequency of the system, the higher requirements are also provided for the surface acoustic wave filter.
The surface acoustic wave filter is subject to frequency offset due to material uniformity, process uniformity, wafer flatness and the like in the preparation process. Frequency deviations occur from wafer to wafer in a lot and from lot to lot, even on a wafer, which reduces product yields.
Disclosure of Invention
The invention provides a frequency trimming method, device, equipment and medium for a filter, which are used for realizing the same frequency value of a plurality of target filters in a target wafer, so that the yield and the production efficiency of the target wafer can be improved.
In a first aspect, an embodiment of the present invention provides a method for trimming a frequency of a filter, including:
the method comprises the steps of obtaining target position information of a plurality of target filters in a target wafer, wherein the plurality of target filters comprise target frequency modulation layers, and the thicknesses of the target frequency modulation layers of the target filters are equal;
Determining the etching thickness of the target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter;
Determining etching time corresponding to each target filter according to the target position information and the etching thickness;
And etching the target frequency modulation layer corresponding to each target filter by adopting an ion beam according to the target position information and the etching time.
Optionally, determining the etching thickness of the target fm layer corresponding to each target filter according to at least two preset frequencies of each target filter includes:
Acquiring target correspondence between frequencies of a plurality of initial filters in an initial wafer and frequency modulation layers of the initial filters;
and determining the etching thickness of the target frequency modulation layer corresponding to each target filter according to the target corresponding relation and at least two preset frequencies of each target filter.
Optionally, obtaining the target correspondence between the frequencies of the plurality of initial filters in the initial wafer and the frequency modulation layers of the plurality of initial filters includes:
acquiring initial frequencies of a plurality of initial filters in an initial wafer;
etching the frequency modulation layers of the plurality of initial filters according to the preset frequency modulation layer removal thickness, and obtaining trimming frequencies of the plurality of etched initial filters;
and obtaining a target corresponding relation according to the initial frequency, the trimming frequency and the preset frequency modulation layer removal thickness.
Optionally, etching the fm layers of the plurality of initial filters according to a preset fm layer removal thickness, including:
Dividing the initial wafer into N initial wafer sections along a first direction, wherein each initial wafer section comprises a plurality of initial filters, the first direction is parallel to a first coordinate axis of a trimming machine and intersects with a second coordinate axis of the trimming machine, and the removal thickness of a preset frequency modulation layer corresponding to each wafer section is sequentially increased along the direction of the first initial wafer section pointing to the N initial wafer section, wherein N is more than or equal to 2, and N is an integer;
And etching the frequency modulation layer of each initial wafer subsection according to the preset frequency modulation layer removal thickness corresponding to each initial wafer subsection.
Optionally, determining the etching thickness of the target fm layer corresponding to each target filter according to the target correspondence and at least two preset frequencies of each target filter includes:
determining etching thickness ranges of the target frequency modulation layers corresponding to the target filters according to the target corresponding relation, the preset frequency and the specification frequency ranges corresponding to the preset frequency;
And determining the etching thickness of the target frequency modulation layer corresponding to each etching thickness range filter according to the average value of the etching thickness ranges.
Optionally, obtaining target position information of a plurality of target filters in the target wafer includes:
Acquiring actual position information of a plurality of target filters in a target wafer;
And determining target position information corresponding to each target filter according to the actual position information, the size information and the size information of the target wafer of each target filter.
Optionally, determining the etching time corresponding to each target filter according to the target position information and the etching thickness includes:
Determining a first topological structure of the target wafer according to the target position information and the etching thickness, wherein the first topological structure comprises the target position information and the etching thickness of the target filter in the target wafer;
Converting the first topological structure into a second topological structure by using an interpolation method, wherein the second topological structure comprises target position information and etching thickness of all target filters in the target wafer;
And determining etching time corresponding to each target filter according to the second topological structure.
In a second aspect, an embodiment of the present invention further provides a frequency trimming device of a filter, including:
The target position information acquisition module is used for acquiring target position information of a plurality of target filters in a target wafer, wherein the plurality of target filters comprise target frequency modulation layers, and the thicknesses of the target frequency modulation layers of the target filters are equal;
the etching thickness determining module is used for determining the etching thickness of the target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter;
The etching time determining module is used for determining the etching time corresponding to each target filter according to the target position information and the etching thickness;
And the frequency trimming module is used for etching the target frequency modulation layer corresponding to each target filter by adopting an ion beam according to the target position information and the etching time.
In a third aspect, an embodiment of the present invention further provides a computer device, including a memory, a processor, and a computer program stored on the memory and executable on the processor, where the processor implements the method for frequency trimming of a filter according to any one of the first aspects when the processor executes the program.
In a fourth aspect, an embodiment of the present invention further provides a computer readable storage medium, on which a computer program is stored, which when executed by a processor implements a method for frequency trimming of a filter according to any one of the first aspects.
According to the technical scheme provided by the embodiment of the invention, the target wafer comprises a plurality of target filters, the thicknesses of the target frequency modulation layers on the upper surfaces of the target filters are the same, and the thicknesses of the target frequency modulation layers are changed by etching the target frequency modulation layers by utilizing ion beams, so that the frequencies of the target filters are changed. The method and the device for etching the frequency modulation layers of the target wafers comprise the steps of determining the etching thickness of the target frequency modulation layers corresponding to each target filter according to at least two preset frequencies of each target filter, determining the etching time corresponding to each target filter according to target position information and the etching thickness, and etching the target frequency modulation layers corresponding to each target filter by adopting ion beams according to the target position information and the etching time, so that the frequencies of all the target filters in the target wafers are identical, and further the yield and the production efficiency of the target wafers can be improved.
Drawings
Fig. 1 is a flow chart of a frequency trimming method of a first filter according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a target wafer according to an embodiment of the present invention;
Fig. 3 is a schematic cross-sectional structure of a target filter according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of an insertion loss of a target filter according to an embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating a comparison between the target filter frequency of FIG. 4 before trimming and the target filter frequency after trimming;
fig. 6 is a flowchart of a second method for frequency trimming of a filter according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of an initial wafer according to an embodiment of the present invention;
fig. 8 is a flowchart of a frequency trimming method of a third filter according to an embodiment of the present invention;
FIG. 9 is a graph showing a frequency of an initial wafer and a predetermined FM layer removal thickness according to an embodiment of the present invention;
FIG. 10 is a graph illustrating an etching thickness range of the target FM layer of the target filter according to FIG. 4;
fig. 11 is a flowchart of a frequency trimming method of a fourth filter according to an embodiment of the present invention;
FIG. 12 is a schematic diagram of actual coordinates of a target wafer according to an embodiment of the present invention;
fig. 13 is a schematic diagram of a first topology of a target wafer according to an embodiment of the present invention;
FIG. 14 is a schematic diagram of a second topology of a target wafer according to an embodiment of the present invention;
FIG. 15 is a three-dimensional normal distribution diagram of the etching rate of an ion beam on a target wafer according to an embodiment of the present invention;
fig. 16 is a schematic diagram of a motion trajectory of an ion beam on a target wafer according to an embodiment of the present invention;
fig. 17 is a schematic structural diagram of a frequency trimming device of a filter according to an embodiment of the present invention;
Fig. 18 is a schematic structural diagram of a computer device applied to a frequency trimming method of a filter according to an embodiment of the present invention.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It is noted that the terms "comprises" and "comprising," and any variations thereof, in the description and claims of the present invention and in the foregoing figures, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed or inherent to such process, method, article, or apparatus.
Fig. 1 is a flow chart of a frequency trimming method of a first filter according to an embodiment of the present invention, where the method may be applied to improve yield and production efficiency of a target wafer when the frequency trimming of the filter is required, and the method may be performed by a frequency trimming device of the filter, where the frequency trimming device of the filter may be implemented in hardware and/or software, and the frequency trimming device of the filter may be configured in a computer device, for example, may be installed on a desktop computer or a workstation. As shown in fig. 1, the method includes:
s101, acquiring target position information of a plurality of target filters in a target wafer.
The target filters comprise target frequency modulation layers, and the thicknesses of the target frequency modulation layers of the target filters are equal.
Specifically, fig. 2 is a schematic structural diagram of a target wafer according to an embodiment of the present invention, and as shown in fig. 2, the target wafer 10 includes a plurality of target filters 101, and the plurality of target filters 101 may be arranged in an array. Fig. 3 is a schematic cross-sectional structure of a target filter according to an embodiment of the present invention, and as shown in fig. 3, the target filter 101 may be a surface acoustic wave filter, and the target filter 101 may include a piezoelectric substrate 1011, an interdigital transducer 1012, and a target frequency modulation layer 1013 which are stacked. Specifically, the interdigital transducer 1012 includes interdigital electrodes and bus bars, and when an alternating current signal of a certain frequency is applied to the bus bars, surface acoustic waves can be generated in the surface acoustic wave filter.
Specifically, by adjusting the thickness of the target fm layer 1013, the mass load on the piezoelectric substrate 1011 can be changed, and thus the frequency of the saw filter can be adjusted. It will be appreciated that the thickness of the target fm layer 1013 is inversely proportional to the frequency of the target filter, i.e., the greater the thickness of the target fm layer 1013, the lower the frequency of the target filter, and the smaller the thickness of the target fm layer 1013, the higher the frequency of the target filter.
It should be noted that, because of the instability of the raw materials and the process of each target filter, the frequency of each target filter is different, and then the etched frequency values of the target filters after etching can be ensured to be the same by etching the target frequency modulation layers corresponding to the target filters with different thicknesses. The target tuning layer 1013 may be, for example, a passivation layer, and the frequency of the filter may be adjusted by etching the thickness of the passivation layer.
Specifically, the target fm layers 1013 of the plurality of target filters 101 in the target wafer 10 may be integrally disposed and have equal thicknesses, and the initial thickness of the target fm layer before etching may be thicker, so that the target fm layer 1013 is etched later.
Specifically, the target wafer is placed on the trimming machine, and the circle center of the target wafer is located on the round point in the coordinates of the trimming machine, so that the target position information of each target filter in the target wafer can be obtained.
Illustratively, with continued reference to fig. 2, a target filter P is arbitrarily selected within the target wafer, where the target position information of the target filter P may be (Xa, ya), where Xa is the abscissa of the target filter in the X-axis and Ya is the ordinate of the target filter in the Y-axis.
S102, determining the etching thickness of the target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter.
Specifically, taking the target filter P as an example of a dual-band acoustic surface filter for illustration, fig. 4 is a schematic diagram of insertion loss of a target filter according to an embodiment of the present invention, as shown in fig. 4, two passband four-side frequencies of the target filter, that is, f 01、f02、f0 and f 0, may be selected as preset frequencies.
Specifically, the trimming equation of the target wafer is as followsWherein a and b are constants, ΔPSN is the thickness of the target FM layer to be etched, and the trimming equations corresponding to f 01、f02、f0 and f 0 are determined according to the trimming equations respectively as follows、、AndThereby can obtain,,,. Where Δf1 is the difference between the pass frequency of f 0 1 and f 0 1, the pass frequency of f 0 1 may be a range spec1, and f 0 1 meets the filter frequency requirement in the pass frequency range, so Δf1 may be the difference between the maximum value of the pass frequency range spec1 and f 0 1, i.e. spec1_max-f 0 1, or Δf1 may be the difference between the minimum value of the pass frequency range spec1 and f 0 1, i.e. spec1_min-f 0 1. According to the above formula, Δpsn1_max and Δpsn1_min corresponding to f 0 1, Δpsn2_max and Δpsn2_min corresponding to f 0 2, Δpsn3_max and Δpsn3_min corresponding to f 0 3, and Δpsn4_max and Δpsn4_min corresponding to f 0 can be obtained. From the intersection [ Δpsn_min, Δpsn1_max ], [ Δpsn2_min, Δpsn2_max ], [ Δpsn3_min, Δpsn3_max ] and [ Δpsn4_min, Δpsn4_max ], the etching thickness range of the target fm layer corresponding to the target filter P can be determined. It will be appreciated that, to ensure accuracy of the target fm layer thickness etch, the etch thickness of the target fm layer of the target filter P may be determined as。
Illustratively, when the initial thickness of the target fm layer is 30nm, Δpsn (Xa, ya) =18 nm, the thickness of the target fm layer remaining after etching is 12nm.
It should be noted that, in the above embodiment, taking one target filter P as an example, according to the above method, the etching thickness of the target fm layer corresponding to each target filter in the target wafer may be determined.
S103, determining etching time corresponding to each target filter according to the target position information and the etching thickness.
Where t is the residence time of the ion beam on the target filter P, R is the etch rate, and (Xa, ya) is the current position of the ion beam in the target wafer. The above equation can be understood to mean that the etch thickness of the target fm layer corresponding to the target filter P is equal to the convolution of the dwell time function and the ion beam etch rate function. The equation can be understood as the sum of the superposition of the etching amounts at specific locations (Xa, ya) during the whole operation of the ion beam. Since Δpsn (Xa, ya) and R are known, and thus the residence time t of the ion beam on the target filter P can be determined, the residence time t of the ion beam on (Xa, ya) can be determined, and thus the etching time corresponding to each target filter in the target wafer can be determined.
S104, etching the target frequency modulation layer corresponding to each target filter by adopting an ion beam according to the target position information and the etching time.
Specifically, the ion beam etches the target frequency modulation layer corresponding to each target filter according to the target position information and etching time so as to achieve different etching amounts, so that the final frequency of each target filter is kept consistent, the frequency values of a plurality of target filters in the target wafer are ensured to be the same, and the yield and production efficiency of the target wafer can be improved.
Specifically, fig. 5 is a schematic diagram of comparison between the frequency before trimming and the frequency after trimming of the target filter corresponding to fig. 4, as shown in fig. 5, a black solid line shows a trend of change of f 0 1 before trimming, a black dotted line shows a trend of change of f1 after trimming, the frequency f1 after trimming is located in the qualified frequency [ spec1_min, spec1_max ], the standard deviation of the frequency corresponding to f 0 1 before trimming is 3.194, and the standard deviation of the frequency corresponding to f1 after trimming is 1.258, so that the standard deviation of f1 after trimming is far better than the standard deviation of f 0 1 before trimming, and the wafer yield after trimming of the frequency can be obviously improved.
The frequency trimming method of the filter provided by the embodiment of the invention comprises the steps of determining the etching thickness of the target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter, determining the etching time corresponding to each target filter according to the target position information and the etching thickness, and etching the target frequency modulation layer corresponding to each target filter by adopting an ion beam according to the target position information and the etching time, so that the frequencies of all the target filters in a target wafer are the same, and further the yield and the production efficiency of the target wafer can be improved.
Optionally, fig. 6 is a flowchart of a frequency trimming method of a second filter according to an embodiment of the present invention, and fig. 6 details an operation of determining an etching thickness of a target fm layer corresponding to each target filter according to at least two preset frequencies of each target filter, as shown in fig. 6, where the frequency trimming method includes:
s201, acquiring target position information of a plurality of target filters in a target wafer.
S202, obtaining target corresponding relations between frequencies of a plurality of initial filters in an initial wafer and frequency modulation layers of the plurality of initial filters.
Specifically, fig. 7 is a schematic structural diagram of an initial wafer according to an embodiment of the present invention, and as shown in fig. 7, the initial wafer 20 includes a plurality of initial filters 201. The initial wafer and the target wafer can be the same type of wafer, so that the initial wafer can be used as a standard, and the trimming equation of the target wafer can be obtained through the corresponding relation between the frequencies of the plurality of initial filters and the targets of the frequency modulation layers of the plurality of initial filters.
It should be noted that the frequency of the initial filter is understood to be the difference between the frequency after the preliminary etching of the fm layer of each initial filter and the frequency that is not etched, i.e., the frequency variation Δf. The fm layer of the initial filter may be understood as a difference between the fm layer thickness after the initial etching of the fm layer of each initial filter and the fm layer thickness without etching, i.e. the fm layer thickness variation Δpsn, so that the frequency of the plurality of initial filters and the fm layer of the plurality of initial filters are linearly fitted to obtain the target correspondence between the fm layer thickness variation Δpsn and the frequency variation Δf of the initial wafer, i.e. the frequency variation Δpsn. Since the initial wafer and the target wafer may be the same type of wafer, the target correspondence relationship between the initial wafer and the target wafer is the same.
S203, determining the etching thickness of the target frequency modulation layer corresponding to each target filter according to the target corresponding relation and at least two preset frequencies of each target filter.
Specifically, with continued reference to fig. 4, taking the target filter P as an example of a dual-band acoustic surface filter, f 01、f02、f0 and f 0 are taken as preset frequencies of the target filter P, so that the etching thickness corresponding to each preset frequency can be determined according to the target corresponding relationship and the preset frequencies, and the average value of the etching thicknesses corresponding to f 01、f02、f0 and f 0 4 can be calculated to determine the etching thickness of the target frequency modulation layer corresponding to the target filter P, so that the etching thickness of the target frequency modulation layer corresponding to each target filter can be obtained.
S204, determining etching time corresponding to each target filter according to the target position information and the etching thickness.
And S205, etching the target frequency modulation layer corresponding to each target filter by adopting an ion beam according to the target position information and the etching time.
The frequency trimming method of the filter obtains the target corresponding relation between the frequencies of the initial filters and the frequency modulation layers of the initial filters in the initial wafer, and determines the etching thickness of the target frequency modulation layer corresponding to each target filter according to the target corresponding relation and at least two preset frequencies of each target filter, so that the etching precision of the target frequency modulation layer corresponding to the target filter can be improved, and the accuracy of etching results is further guaranteed.
Optionally, fig. 8 is a flowchart of a frequency trimming method of a third filter according to the embodiment of the present invention, and fig. 8 is a flowchart illustrating in detail, based on the foregoing embodiment, an operation of obtaining a target correspondence between frequencies of a plurality of initial filters in an initial wafer and fm layers of the plurality of initial filters and etching the fm layers of the plurality of initial filters according to a preset fm layer removal thickness, where the frequency trimming method includes:
S301, acquiring target position information of a plurality of target filters in a target wafer.
S302, acquiring initial frequencies of a plurality of initial filters in an initial wafer.
Specifically, the initial frequencies of the plurality of initial filters may be understood as frequencies of the plurality of initial filters when the fm layers corresponding to the plurality of initial filters are not etched, that is, frequencies obtained by detecting the plurality of initial filters with the probe before etching the fm layers corresponding to the plurality of initial filters.
S303, dividing the initial wafer into N initial wafer sections along a first direction, wherein each initial wafer section comprises a plurality of initial filters, and the first direction is parallel to a first coordinate axis of the trimming machine and intersects with a second coordinate axis of the trimming machine. Along the direction that the first initial wafer subsection points to the N initial wafer subsection, the removal thickness of the preset frequency modulation layer corresponding to each wafer subsection is gradually increased.
Wherein N is more than or equal to 2, and N is an integer.
Specifically, with continued reference to FIG. 7, the initial wafer 20 includes a plurality of initial filters 201 therein, and the initial wafer 20 is divided into N initial wafer sections 20-1 along a first direction (Z direction as shown in FIG. 7). Each of the initial wafer sections 20-1 includes a plurality of initial filters 201.
For example, the first direction Z may be parallel to the Y coordinate axis of the trimming machine and intersect the X coordinate axis of the trimming machine.
Specifically, taking n=6 as an example, the initial wafer 20 includes six initial wafer sections 20-1. Along the direction of the first initial wafer section 21 pointing to the sixth initial wafer section 22, the removal thickness of the preset fm layer corresponding to each wafer initial wafer section 20-1 increases in sequence.
Illustratively, the predetermined fm removal thickness of the first initial wafer section 21 is 3nm, that is, the predetermined fm removal thickness of all the initial filters 201 in the first initial wafer section 21 is 3nm. The removal thickness of the preset fm layer corresponding to the second initial wafer segment is 6nm, i.e., the removal thickness of the preset fm layer of all the initial filters 201 in the second initial wafer segment is 6nm. The removal thickness of the preset frequency modulation layer corresponding to the third initial wafer part is 9nm, the removal thickness of the preset frequency modulation layer corresponding to the fourth initial wafer part is 12nm, the removal thickness of the preset frequency modulation layer corresponding to the fifth initial wafer part is 15nm, and the removal thickness of the preset frequency modulation layer corresponding to the sixth initial wafer part is 18nm.
S304, etching the frequency modulation layer of each initial wafer subsection according to the preset frequency modulation layer removal thickness corresponding to each initial wafer subsection, and obtaining the trimming frequencies of the etched plurality of initial filters.
Specifically, with continued reference to fig. 7, the fm etch thickness corresponding to the first initial wafer segment 21 is 3nm, that is, the predetermined fm removal thickness of all the initial filters 201 in the first initial wafer segment 21 is 3nm. The etching thickness of the fm layer corresponding to the second initial wafer portion is 6nm, that is, the removal thickness of the fm layer preset for all the initial filters 201 in the second initial wafer portion is 6nm, and so on, to complete the etching of the fm layer corresponding to each initial wafer portion.
In particular, the trimming frequency is understood to be the frequency of the plurality of initial filters after etching the fm layer in the initial wafer subsection.
S305, obtaining a target corresponding relation according to the initial frequency, the trimming frequency and the preset frequency modulation layer removal thickness.
Specifically, fig. 9 is a fitted curve of the frequency of the initial wafer and the preset fm removal thickness provided in the embodiment of the present invention, as shown in fig. 9, the frequency variation Δf may be determined according to the difference between the initial frequency and the trimming frequency of each initial filter, where the preset fm removal thickness is the fm thickness variation Δpsn in each initial filter, so that a plurality of Δf and a plurality of Δpsn may be fitted to obtain a target correspondence, that is。
S306, determining the etching thickness range of the target frequency modulation layer corresponding to each target filter according to the target corresponding relation, the preset frequency and the specification frequency range corresponding to the preset frequency.
Specifically, taking the example that the target filter P is a dual-band acoustic surface filter as illustrated in fig. 4, f 01、f02、f0 and f 0 of the target filter may be selected as the preset frequencies.
Specifically, according to the corresponding relation of the targetsWherein a and b are constants, ΔPSN is the thickness of the target FM layer to be etched, and the trimming equations corresponding to f 01、f02、f0 and f 0 are determined according to the trimming equations respectively as follows、、AndThereby can obtain,,,. Wherein, f 0 1 has a pass frequency range of spec1[ spec1_min, spec1_max ], f 0 2 has a pass frequency range of spec2[ spec2_min, spec2_max ], f 0 3 has a pass frequency range of spec3[ spec3_min, spec3_max ], and f 0 4 has a pass frequency range of spec4[ spec4_min, spec4_max ]. Δf1 is the difference between spec1_min and f 0 1 or the difference between spec1_max and f 0 1, thus obtaining、、、、、、、. Fig. 10 is a schematic diagram of an etching thickness range of the target fm layer of the target filter corresponding to fig. 4, and as shown in fig. 4 and 10, the etching thickness range of the target fm layer may be determined according to [ Δpsn1_min, [ Δpsn1_max ], [ Δpsn2_min, [ Δpsn2_max ], [ Δpsn3_min, [ Δpsn3_max ] and the intersection [ Δpsn_min, Δpsn_max ] of [ Δpsn4_min, Δpsn_max ].
S307, determining the etching thickness of the target frequency modulation layer corresponding to each etching thickness range filter according to the average value of the etching thickness ranges.
Specifically, to ensure accuracy of etching the target fm layer thickness, the etching thickness of the target fm layer of the target filter P may be determined as。
S308, determining etching time corresponding to each target filter according to the target position information and the etching thickness.
S309, etching the target frequency modulation layer corresponding to each target filter by adopting an ion beam according to the target position information and etching time.
According to the frequency trimming method of the filter, the trimming equation of the target wafer can be determined by acquiring the target corresponding relation between the frequencies of the plurality of initial filters in the initial wafer and the frequency modulation layers of the plurality of initial filters, so that the etching precision of the target frequency modulation layers corresponding to the target filters can be improved, and the accuracy of etching results can be guaranteed.
Optionally, fig. 11 is a flowchart of a frequency trimming method for a fourth filter according to the embodiment of the present invention, and fig. 11 is a flowchart illustrating in detail, based on the above embodiment, operations for obtaining target position information of a plurality of target filters in a target wafer and determining etching time corresponding to each target filter according to the target position information and the etching thickness, where, as shown in fig. 11, the frequency trimming method includes:
s401, acquiring actual position information of a plurality of target filters in a target wafer.
Specifically, fig. 12 is a schematic diagram of actual coordinates of a target wafer according to an embodiment of the present invention, as shown in fig. 12, a probe selects a target filter in the target wafer as a reference filter, sets coordinates of the target filter, and sets up a coordinate map with each target filter as a unit by using the reference filter as a reference for the other target filters. The probe moves one target filter along the X axis at a time, the X coordinate is +1, and similarly, the probe moves one target filter along the Y axis at a time, and the Y coordinate is +1.
Illustratively, the actual location information of the target filter a is (61,29) and the actual location information of the target filter B is (63,31).
Illustratively, the selection of the reference filter is random. Since the ion beam movement is "S" shaped, the first target filter in the upper left corner may generally be selected as the reference filter to match the ion beam movement.
S402, determining target position information corresponding to each target filter according to the actual position information, the size information and the size information of the target wafer of each target filter.
Specifically, since the trimming coordinate is the origin with the center of the circle of the wafer, the coordinate of each target filter in the trimming coordinate system is the target distance from the origin.
Specifically, with continued reference to fig. 12, the size information of the target wafer may include a minimum coordinate Xmin corresponding to the target filter closest to the Y axis of the trimming machine, a maximum coordinate Xmax corresponding to the target filter farthest from the Y axis of the trimming machine, a minimum coordinate Ymin corresponding to the target filter closest to the X axis of the trimming machine, and a maximum coordinate Ymax corresponding to the target filter farthest from the X axis of the trimming machine in the target wafer. Illustratively, taking the shape of the wafer shown in fig. 12 as an example, the minimum coordinate Xmin corresponding to the target filter closest to the Y axis of the trimming machine in the target wafer, that is, the minimum coordinate Xmin corresponding to the leftmost target filter in the target wafer, the maximum coordinate Xmax corresponding to the target filter farthest from the Y axis of the trimming machine, that is, the maximum coordinate Xmax corresponding to the rightmost target filter in the target wafer, the minimum coordinate Ymin corresponding to the target filter closest to the X axis of the trimming machine, that is, the minimum coordinate Ymin corresponding to the bottommost target filter in the target wafer, and the maximum coordinate Ymax corresponding to the target filter farthest from the X axis of the trimming machine, that is, the maximum coordinate Ymax corresponding to the uppermost target filter in the target wafer. It should be noted that, since the shape of one side of the target wafer may be a flat side, for example, one side of the target wafer close to the X axis of the trimming machine may be a flat side, so the number of target filters closest to the X axis of the trimming machine may be plural, and the Ymin corresponding to the plural target filters is the same.
Specifically, the size information of the target filter can be understood as the extension size of the target filter in the X-axis and the extension size in the Y-axis, i.e., the length and width of the target filter.
For example, the length of the target filter P along the X-axis is L, the width of the target filter along the Y-axis is H, the coordinates (Xp, yp) measured by the probe, and the corresponding trimming coordinates, i.e., the target position information of the target chip is (Xa, ya), are:
;
。
S403, determining the etching thickness of the target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter.
S404, determining a first topological structure of the target wafer according to the target position information and the etching thickness, wherein the first topological structure comprises the target position information and the etching thickness of a target filter in the target wafer.
Specifically, fig. 13 is a schematic diagram of a first topology structure of a target wafer according to an embodiment of the present invention, as shown in fig. 13, the target position information of the target filter P is (Xa, ya), and the etching thickness of the target fm layer is Δpsn, so that the target position information and the etching thickness of the target filter P may be expressed as (Xa, ya, Δpsn), and therefore, a three-dimensional coordinate may be obtained in the target wafer according to the target position information and the etching thickness of each target filter, and further, the first topology structure of a plurality of target filters in the target wafer may be obtained.
In order to improve the frequency modulation efficiency, only the target position information and the etching thickness of a part of the target filters in the target wafer may be obtained.
S405, converting the first topological structure into a second topological structure by utilizing an interpolation method, wherein the second topological structure comprises target position information and etching thickness of all target filters in a target wafer.
Specifically, fig. 14 is a schematic diagram of a second topology structure of a target wafer according to an embodiment of the present invention, as shown in fig. 14, the first topology structure is converted into the second topology structure by using an interpolation method, so that the target position information and the etching thickness of the target filter that are not obtained can be supplemented by the interpolation method, that is, the target position information and the etching thickness of the remaining target filters can be predicted by the target position information and the etching thickness of a part of the target filters in the target wafer, and then the second topology structure of all the target filters in the target wafer can be obtained.
S406, determining etching time corresponding to each target filter according to the second topological structure.
Specifically, fig. 15 is a three-dimensional normal distribution diagram of an etching rate of an ion beam on a target wafer according to an embodiment of the present invention, fig. 16 is a schematic diagram of a motion track of the ion beam on the target wafer according to an embodiment of the present invention, as shown in fig. 15 and 16, according to a second topology, a residence time of the ion beam on different coordinates can be converted, because the etching rate of the ion beam on the target wafer is three-dimensional normal distribution, and a step diameter of an ion beam displacement is necessarily smaller than a diameter d of the ion beam rate, each circle in fig. 16 may represent an ion beam, the motion track of the ion beam may be in an "S" shape, and the ion beam may have a superposition effect at the same position during the motion process, thereby according to the present inventionThe superposition effect of the ion beam during etching at different positions can be calculated. Since Δpsn (Xa, ya) and etching rate R are known, and thus the residence time t of the ion beam on the target filter P can be determined, the residence time t of the ion beam on (Xa, ya) can be determined. Thus, the etching time corresponding to each target filter in the target wafer can be determined.
S407, etching the target frequency modulation layer corresponding to each target filter by adopting an ion beam according to the target position information and etching time.
According to the frequency trimming method for the filter, the actual position information is converted into the target position information, so that coordinate conversion can be achieved, in addition, the first topological structure is converted into the second topological structure through the interpolation method, so that trimming accuracy can be improved through trimming of the target position information and etching thickness of the target filter which are not obtained through the interpolation method, etching accuracy of the target frequency modulation layer corresponding to each target filter can be further guaranteed, frequency values of a plurality of target filters in a target wafer are guaranteed to be the same, and yield and production efficiency of the target wafer are improved.
Based on the same inventive concept, the embodiment of the present invention further provides a frequency trimming device of a filter, and fig. 17 is a schematic structural diagram of the frequency trimming device of a filter provided by the embodiment of the present invention, as shown in fig. 17, where the frequency trimming device of a filter includes:
the target position information obtaining module 100 is configured to obtain target position information of a plurality of target filters in a target wafer, where the plurality of target filters include target fm layers, and thicknesses of the target fm layers of the target filters are equal.
And the etching thickness determining module 200 is configured to determine the etching thickness of the target fm layer corresponding to each target filter according to at least two preset frequencies of each target filter.
And the etching time determining module 300 is used for determining the etching time corresponding to each target filter according to the target position information and the etching thickness.
The frequency trimming module 400 is configured to etch the target fm layer corresponding to each target filter by using an ion beam according to the target position information and the etching time.
Optionally, the etching thickness determining module of the target frequency modulation layer includes a target correspondence acquiring sub-module and an etching thickness determining sub-module of the target frequency modulation layer.
Specifically, the target corresponding relation obtaining sub-module is configured to obtain target corresponding relations between frequencies of a plurality of initial filters in the initial wafer and frequency modulation layers of the plurality of initial filters.
Specifically, the etching thickness determination submodule of the target frequency modulation layer is used for determining the etching thickness of the target frequency modulation layer corresponding to each target filter according to the target corresponding relation and at least two preset frequencies of each target filter.
Optionally, the target correspondence acquiring submodule includes an initial frequency acquiring unit, a modified frequency acquiring unit and a target correspondence acquiring unit.
Specifically, the initial frequency obtaining unit is configured to obtain initial frequencies of a plurality of initial filters in an initial wafer.
Specifically, the trimming frequency obtaining unit is configured to etch the frequency modulation layers of the plurality of initial filters according to the preset removal thickness of the frequency modulation layers, and obtain trimming frequencies of the plurality of etched initial filters.
Specifically, the target corresponding relation obtaining unit is configured to obtain a target corresponding relation according to the initial frequency, the trimming frequency and the preset trimming layer removal thickness.
Optionally, the modified frequency obtaining unit includes an initial wafer division sub-unit and a modified frequency layer etching sub-unit.
The method comprises the steps of dividing an initial wafer into N initial wafer parts along a first direction, wherein each initial wafer part comprises a plurality of initial filters, the first direction is parallel to a first coordinate axis of a trimming machine and is intersected with a second coordinate axis of the trimming machine, the first initial wafer part points to the direction of the N initial wafer part, the removal thickness of a preset frequency modulation layer corresponding to each wafer part is sequentially increased, N is more than or equal to 2, and N is an integer.
Specifically, the frequency modulation layer etching subunit is configured to etch the frequency modulation layer of each initial wafer section according to a preset frequency modulation layer removal thickness corresponding to each initial wafer section.
Optionally, the etching thickness determining submodule of the target frequency modulation layer comprises an etching thickness range determining unit and an etching thickness determining unit.
Specifically, the etching thickness range determining unit is configured to determine an etching thickness range of the target fm layer corresponding to each target filter according to the target correspondence, the preset frequency, and a specification frequency range corresponding to the preset frequency.
Specifically, the etching thickness determining unit determines the etching thickness of the target frequency modulation layer corresponding to each etching thickness range filter according to the average value of the etching thickness ranges.
Optionally, the target location information acquisition module includes an actual location information acquisition sub-module and a target location information acquisition sub-module.
Specifically, the actual position information obtaining sub-module is configured to obtain actual position information of a plurality of target filters in the target wafer.
Specifically, the target position information obtaining sub-module is configured to determine target position information corresponding to each target filter according to actual position information, size information and size information of the target wafer of each target filter.
Optionally, the etching time determining module includes a first topology determining sub-module, a second topology determining sub-module, and an etching time determining sub-module.
The first topological structure determining submodule is used for determining a first topological structure of the target wafer according to the target position information and the etching thickness, and the first topological structure comprises the target position information and the etching thickness of a target filter in the target wafer.
The second topological structure determining submodule is used for converting the first topological structure into a second topological structure by utilizing an interpolation method, and the second topological structure comprises target position information and etching thickness of all target filters in a target wafer.
Specifically, the etching time determining submodule is used for determining the etching time corresponding to each target filter according to the second topological structure.
The frequency trimming device of the filter provided by the embodiment of the invention acquires the target position information of a plurality of target filters in a target wafer through the target position information acquisition module, determines the etching thickness of the target frequency modulation layer corresponding to each target filter according to at least two preset frequencies of each target filter through the etching thickness determination module of the target frequency modulation layer, determines the etching time corresponding to each target filter according to the target position information and the etching thickness through the etching time determination module, and etches the target frequency modulation layer corresponding to each target filter through the frequency trimming module according to the target position information and the etching time by adopting an ion beam, so that the frequency values of the plurality of target filters in the target wafer are identical, and further the yield and the production efficiency of the target wafer can be improved.
Fig. 18 is a schematic structural diagram of a computer device applied to a frequency trimming method of a filter according to an embodiment of the present invention. Computer devices are intended to represent various forms of digital computers, such as laptops, desktops, workstations, personal digital assistants, servers, blade servers, mainframes, and other appropriate computers. Computer devices may also represent various forms of mobile equipment, such as personal digital processing, cellular telephones, smart phones, wearable devices (e.g., helmets, glasses, watches, etc.), and other similar computing equipment. The components shown herein, their connections and relationships, and their functions, are meant to be exemplary only, and are not meant to limit implementations of the inventions described and/or claimed herein.
As shown in fig. 18, the computer device 50 includes at least one processor 51, and a memory such as a Read Only Memory (ROM) 52, a Random Access Memory (RAM) 53, etc. communicatively connected to the at least one processor 51, wherein the memory stores a computer program executable by the at least one processor, and the processor 51 may perform various suitable actions and processes according to the computer program stored in the Read Only Memory (ROM) 52 or the computer program loaded from the storage unit 58 into the Random Access Memory (RAM) 53. In the RAM 53, various programs and data required for the operation of the computer device 50 can also be stored. The processor 51, the ROM 52 and the RAM 53 are connected to each other via a bus 54. An input/output (I/O) interface 55 is also connected to bus 54.
Various components in the computer device 50 are connected to the I/O interface 55, including an input unit 56 such as a keyboard and a mouse, an output unit 57 such as various types of displays and speakers, etc., a storage unit 58 such as a magnetic disk, optical disk, etc., and a communication unit 59 such as a network card, modem, wireless communication transceiver, etc. The communication unit 59 allows the computer device 50 to exchange information/data with other devices via a computer network, such as the internet, and/or various telecommunications networks.
The processor 51 may be a variety of general and/or special purpose processing components having processing and computing capabilities. Some examples of processor 51 include, but are not limited to, a Central Processing Unit (CPU), a Graphics Processing Unit (GPU), various specialized Artificial Intelligence (AI) computing chips, various processors running machine learning model algorithms, digital Signal Processors (DSPs), and any suitable processor, controller, or microcontroller, among others. The processor 51 performs the various methods and processes described above, such as a frequency trimming method applied to a filter.
In some embodiments, the frequency trimming method applied to a filter may be implemented as a computer program tangibly embodied on a computer-readable storage medium, such as the storage unit 58. In some embodiments, part or all of the computer program may be loaded and/or installed onto the computer device 50 via the ROM 52 and/or the communication unit 59. When the computer program is loaded into RAM 53 and executed by processor 51, one or more of the steps of the frequency trimming method described above as being applied to a filter may be performed. Alternatively, in other embodiments, the processor 51 may be configured to perform a frequency trimming method applied to a filter in any other suitable manner (e.g., by means of firmware).
Various implementations of the systems and techniques described here above can be implemented in digital electronic circuitry, integrated circuit systems, field Programmable Gate Arrays (FPGAs), application Specific Integrated Circuits (ASICs), application Specific Standard Products (ASSPs), systems On Chip (SOCs), load programmable logic devices (CPLDs), computer hardware, firmware, software, and/or combinations thereof. These various embodiments may include being implemented in one or more computer programs that are executable and/or interpretable on a programmable system including at least one programmable processor, which may be a special or general purpose programmable processor, operable to receive data and instructions from, and to transmit data and instructions to, a storage system, at least one input device, and at least one output device.
A computer program for carrying out methods of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general purpose computer, special purpose computer, or other programmable data processing apparatus, such that the computer programs, when executed by the processor, cause the functions/acts specified in the flowchart and/or block diagram block or blocks to be implemented. The computer program may execute entirely on the machine, partly on the machine, as a stand-alone software package, partly on the machine and partly on a remote machine or entirely on the remote machine or server.
In the context of embodiments of the present invention, a computer-readable storage medium may be a tangible medium that can contain, or store a computer program for use by or in connection with an instruction execution system, apparatus, or device. The computer readable storage medium may include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any suitable combination of the foregoing. Alternatively, the computer readable storage medium may be a machine readable signal medium. More specific examples of a machine-readable storage medium would include an electrical connection based on one or more wires, a portable computer diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.
To provide for interaction with a user, the systems and techniques described here can be implemented on a computer device having a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user and a keyboard and a pointing device (e.g., a mouse or a trackball) by which the user can provide input to the electronic device. Other types of devices may also be used to provide interaction with the user, for example, feedback provided to the user may be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback), and input from the user may be received in any form, including acoustic input, speech input, or tactile input.
The systems and techniques described here can be implemented in a computing system that includes a background component (e.g., as a data server), or that includes a middleware component (e.g., an application server), or that includes a front-end component (e.g., a user computer having a graphical user interface or a web browser through which a user can interact with an implementation of the systems and techniques described here), or any combination of such background, middleware, or front-end components. The components of the system can be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include a Local Area Network (LAN), a Wide Area Network (WAN), a blockchain network, and the Internet.
The computing system may include clients and servers. The client and server are typically remote from each other and typically interact through a communication network. The relationship of client and server arises by virtue of computer programs running on the respective computers and having a client-server relationship to each other. The server can be a cloud server, also called a cloud computing server or a cloud host, and is a host product in a cloud computing service system, so that the defects of high management difficulty and weak service expansibility in the traditional physical hosts and VPS service are overcome.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, and that various obvious changes, rearrangements, combinations, and substitutions can be made by those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (10)
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Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020068230A1 (en) * | 2000-07-07 | 2002-06-06 | Murata Manufacturing Co., Ltd. | Method for adjusting frequency of piezoelectric resonator |
| US6413439B1 (en) * | 1999-03-18 | 2002-07-02 | Fujitsu Limited | Method of manufacturing surface acoustic wave device |
| US20020109565A1 (en) * | 2001-02-15 | 2002-08-15 | Juha Ella | Method and system for wafer-level tuning of bulk acoustic wave resonators and filters |
| JP2007221243A (en) * | 2006-02-14 | 2007-08-30 | Showa Shinku:Kk | Frequency adjustment apparatus and method for piezoelectric element |
| US20110315654A1 (en) * | 2009-09-18 | 2011-12-29 | Nxp B.V. | Method of manufacturing a bulk acoustic wave device |
| JP2016046546A (en) * | 2014-08-19 | 2016-04-04 | セイコーエプソン株式会社 | Method for manufacturing functional element piece, functional element piece, functional element, vibrator, electronic device, and moving body |
| KR20170096726A (en) * | 2016-02-17 | 2017-08-25 | 삼성전기주식회사 | Acoustic wave filter device and method for manufacturing the same |
| CN110190827A (en) * | 2019-05-30 | 2019-08-30 | 中国电子科技集团公司第二十六研究所 | A Method of Ion Beam Frequency Modulation Based on Surface Acoustic Wave |
| CN110266285A (en) * | 2019-05-31 | 2019-09-20 | 武汉大学 | A kind of micromechanical resonator, its preparation and frequency fine-tuning correction method |
| CN116707485A (en) * | 2023-06-21 | 2023-09-05 | 浙江星曜半导体有限公司 | Band-pass filter circuit, band-pass filter and electronic equipment |
| CN117639697A (en) * | 2022-08-16 | 2024-03-01 | 中芯集成电路（宁波）有限公司 | Method for forming bulk acoustic wave filter |
| WO2024087399A1 (en) * | 2022-10-26 | 2024-05-02 | 河源市艾佛光通科技有限公司 | Bulk acoustic wave filter and manufacturing method therefor |
| CN118504423A (en) * | 2024-07-17 | 2024-08-16 | 浙江大学 | Intelligent manufacturing method and equipment for etching process of semiconductor device and storage medium |
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6413439B1 (en) * | 1999-03-18 | 2002-07-02 | Fujitsu Limited | Method of manufacturing surface acoustic wave device |
| US20020068230A1 (en) * | 2000-07-07 | 2002-06-06 | Murata Manufacturing Co., Ltd. | Method for adjusting frequency of piezoelectric resonator |
| US20020109565A1 (en) * | 2001-02-15 | 2002-08-15 | Juha Ella | Method and system for wafer-level tuning of bulk acoustic wave resonators and filters |
| JP2007221243A (en) * | 2006-02-14 | 2007-08-30 | Showa Shinku:Kk | Frequency adjustment apparatus and method for piezoelectric element |
| US20110315654A1 (en) * | 2009-09-18 | 2011-12-29 | Nxp B.V. | Method of manufacturing a bulk acoustic wave device |
| JP2016046546A (en) * | 2014-08-19 | 2016-04-04 | セイコーエプソン株式会社 | Method for manufacturing functional element piece, functional element piece, functional element, vibrator, electronic device, and moving body |
| KR20170096726A (en) * | 2016-02-17 | 2017-08-25 | 삼성전기주식회사 | Acoustic wave filter device and method for manufacturing the same |
| CN110190827A (en) * | 2019-05-30 | 2019-08-30 | 中国电子科技集团公司第二十六研究所 | A Method of Ion Beam Frequency Modulation Based on Surface Acoustic Wave |
| CN110266285A (en) * | 2019-05-31 | 2019-09-20 | 武汉大学 | A kind of micromechanical resonator, its preparation and frequency fine-tuning correction method |
| CN117639697A (en) * | 2022-08-16 | 2024-03-01 | 中芯集成电路（宁波）有限公司 | Method for forming bulk acoustic wave filter |
| WO2024087399A1 (en) * | 2022-10-26 | 2024-05-02 | 河源市艾佛光通科技有限公司 | Bulk acoustic wave filter and manufacturing method therefor |
| CN116707485A (en) * | 2023-06-21 | 2023-09-05 | 浙江星曜半导体有限公司 | Band-pass filter circuit, band-pass filter and electronic equipment |
| CN118504423A (en) * | 2024-07-17 | 2024-08-16 | 浙江大学 | Intelligent manufacturing method and equipment for etching process of semiconductor device and storage medium |
Non-Patent Citations (2)
| Title |
|---|
| MISHIN: "Thickness Control by Ion Beam Milling in Acoustic Resonator Devices", 《2010 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM (FCS》, 31 December 2010 (2010-12-31), pages 642 - 645 * |
| 吴荣兴: "陶瓷封装对石英晶体谐振器的仿真研究", 《电子与封装》, 31 December 2014 (2014-12-31), pages 6 - 8 * |
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