CN119381231A - Ion energy screening device and method - Google Patents
Ion energy screening device and method Download PDFInfo
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- CN119381231A CN119381231A CN202411361430.6A CN202411361430A CN119381231A CN 119381231 A CN119381231 A CN 119381231A CN 202411361430 A CN202411361430 A CN 202411361430A CN 119381231 A CN119381231 A CN 119381231A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/08—Measuring current density
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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Abstract
一种离子能量筛选装置及方法，包括：绝缘套筒的头部固定连接有前级；绝缘套筒的内侧沿轴向间隔设置有n个绝缘环和孔栅，n个绝缘环和孔栅形成多腔体组件；孔栅上加工有多个贯穿孔作为网孔，用于让等离子体通过；绝缘套筒的内侧还安装有收集极，收集极位于所述多腔体组件的后端，绝缘套筒的尾部固定连接有端盖，端盖用于封闭绝缘套筒的尾部；收集极用于收集筛选后的离子；陶瓷垫片套装在端盖的外侧。本发明通过在多个孔栅施加不同电压，达到排除电子，筛选离子的效果。并且能够控制获取具有一定离子能量范围的离子。在真空离子镀膜过程中，既能够用于对离子能量范围进行检测，也能够控制离子能量得到不同物理性能的膜层。
An ion energy screening device and method, comprising: the head of an insulating sleeve is fixedly connected to a front stage; n insulating rings and aperture grids are arranged at intervals along the axial direction on the inner side of the insulating sleeve, and the n insulating rings and aperture grids form a multi-cavity component; a plurality of through holes are processed on the aperture grid as mesh holes for allowing plasma to pass; a collecting electrode is also installed on the inner side of the insulating sleeve, and the collecting electrode is located at the rear end of the multi-cavity component, and the tail of the insulating sleeve is fixedly connected to an end cover, and the end cover is used to close the tail of the insulating sleeve; the collecting electrode is used to collect the screened ions; a ceramic gasket is sleeved on the outer side of the end cover. The present invention achieves the effect of excluding electrons and screening ions by applying different voltages to multiple aperture grids. And it can control the acquisition of ions with a certain ion energy range. In the process of vacuum ion plating, it can be used to detect the ion energy range and control the ion energy to obtain film layers with different physical properties.
Description
Technical Field
The invention relates to an ion energy screening device and method, and belongs to the technical field of machining.
Background
Along with the continuous development of ion technology, the application of plasma coating technology is also becoming more and more widespread, and the material surface is bombarded by high-energy ion beams to cause chemical reaction to form a film layer. The film obtained by the film coating process has compact structure, uniform thickness and good physical and chemical properties.
In the plasma coating process, the problem that the density of a film layer is not high and the hardness is low because the ion energy screening degree is insufficient and the surface of a part cannot accurately distribute required ions often exists. Therefore, an ion energy screening device needs to be designed to improve the quality and performance of the membrane layer.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides an ion energy screening device and method which can efficiently screen specified energy ions, so that the high film density of a product is improved, and a more superior film is obtained.
The technical scheme provided by the invention is as follows:
In a first aspect of the present invention,
An ion energy screening device comprises a front stage, an insulating ring, an insulating sleeve, a hole grid, a collector, an end cover and a ceramic gasket;
the head of the insulating sleeve is fixedly connected with a front stage, and a through hole for passing plasma is formed in the top end of the front stage;
the inner side of the insulating sleeve is provided with n insulating rings and hole grids at intervals along the axial direction, and the n insulating rings and the hole grids form a multi-cavity assembly;
the hole grating is provided with a plurality of through holes which are used as meshes and used for allowing plasma to pass through;
The inner side of the insulating sleeve is also provided with a collector, the collector is positioned at the rear end of the multi-cavity assembly, the tail part of the insulating sleeve is fixedly connected with an end cover, and an insulating ring is arranged between the end cover and the collector;
the collector is used for collecting the screened ions;
the ceramic gasket is sleeved on the outer side of the end cover and used for limiting and adjusting the axial position of the end cover fixedly connected with the insulating sleeve;
the front stage, the insulating ring and the insulating sleeve are all made of ceramic materials, the hole grid is made of metal materials, and the end cover is made of brass materials.
Preferably, the front stage is of a hemispherical structure, and the ratio of the diameter of the through hole at the top end of the front stage to the sphere diameter is in the range of 0.3-0.6.
Preferably, the insulating sleeve is in clearance fit with the n+1 insulating rings;
The structural dimensions of the n+1 insulating rings are the same, the inner diameter of the insulating rings is equal to 70% -80% of the outer diameter, and the axial thickness of the insulating rings is 3-6 mm.
Preferably, the thickness of the hole grating is in the range of 0.1 mm-0.5 mm;
The holes of the hole grating are distributed in a spiral mode or in concentric circles, the porosity value range is 75% -95%, and the hole diameter value range is 0.5 mm-2 mm.
Preferably, the axial distance between two adjacent hole grids is 3 mm-6 mm.
Preferably, the ratio of the inner diameter to the outer diameter of the insulating sleeve is in the range of 0.7-0.9.
Preferably, the collector is detachable so that the workpiece to be coated can be replaced by the collector, and plasma coating is performed on the workpiece to be coated.
In a second aspect of the present invention,
The method for ion current density testing by the ion energy screening device according to the first aspect comprises the following steps:
1) Applying a voltage of 0V to the hole grid a, applying negative bias to the hole grid b and the hole grid d, and applying a triangular waveform scanning positive voltage to the hole grid c, wherein the negative bias applied to the hole grid b is higher than the negative bias applied to the hole grid d;
2) Starting an external ion source, enabling plasma to sequentially pass through the front stage and the multi-cavity assembly, and measuring the current value at the collector;
3) Increasing the range of the scanning positive voltage of the triangular waveform applied by the hole grid c, and measuring the current value at the collector again;
4) Repeating the step 3) to continuously increase the range of the scanning positive voltage of the triangular waveform applied by the hole grid c until the current value at the collector is 0, and then entering the step 5);
5) When a scanning positive voltage of triangular waveforms in different ranges is applied to the aperture grid c, the current value of the obtained collector is obtained as the corresponding ion current density.
In a third aspect of the present invention,
A method for plasma coating a part to be processed, wherein a collector is replaced by the part to be processed, and the ion energy screening device is used for screening out specified energy ions so as to carry out plasma coating on the part to be processed.
Compared with the prior art, the invention has the beneficial effects that:
1) The invention achieves the effect of filtering electrons and ions with low energy through the combination of the multi-layer hole grids. The screening speed is effectively improved, the result is simple, the method is easy to realize, and the method is economical and practical without depending on a complex detection system.
2) According to the invention, the effects of electron filtration, low-energy ion filtration, ion filtration in a specific energy section and secondary electron filtration are respectively realized by virtue of different voltages loaded on each layer of aperture grid. Interference of electrons, low energy ions and secondary electrons is maximally excluded.
Drawings
FIG. 1 is a cross-sectional view of an ion energy screening apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an ion energy screening apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a front stage according to an embodiment of the present invention;
FIG. 4 is a schematic view of an insulating ring according to an embodiment of the present invention;
FIG. 5 is a schematic view of an insulating sleeve according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a structure of a hole gate according to an embodiment of the present invention;
FIG. 7 is a schematic view of a collector structure according to an embodiment of the present invention;
Fig. 8 is a schematic structural view of an end cap in an example of the invention.
Detailed Description
The invention is further illustrated by the following examples, which are not intended to limit the invention to the embodiments described.
The invention relates to an ion energy screening device which comprises a front stage 1, an insulating ring, an insulating sleeve 7, a hole grid, a collector 12, an end cover 13 and a ceramic gasket 14.
The inner side of the insulating sleeve 7 is provided with n insulating rings and hole grids at intervals along the axial direction, and the n insulating rings and the hole grids form a multi-cavity assembly;
The hole grating is provided with a plurality of through holes which are used as meshes for allowing plasma to pass through;
the head of the insulating sleeve 7 is fixedly connected with a front stage 1, and a through hole for passing plasma is formed in the top end of the front stage 1;
The front stage 1 is of a hemispherical structure, a ceramic material is selected, a through hole for allowing plasma to pass through is formed in the top end of the front stage 1, the value range of the ratio of the diameter of the through hole to the diameter of the ball is 0.3-0.6, an external thread is formed in the bottom of the through hole, and the through hole is fixedly connected with the insulating sleeve 7 through the thread.
The collector 12 is also installed to the inboard of insulating sleeve 7, and collector 12 is located the rear end of multi-chamber subassembly, and insulating sleeve 7's afterbody fixedly connected with end cover 13 still is provided with an insulating ring between end cover 13 and the collector 12. The end cap 13 is used to close the tail of the insulating sleeve 7.
The collector 12 is used for collecting the screened ions for subsequent analysis and detection work;
the insulating sleeve 7 is in clearance fit with n+1 insulating rings;
The n+1 insulating rings have the same structural size, the inner diameter is equal to 70% -80% of the outer diameter, and the value range of the axial thickness is 3-6 mm.
The insulating ring is made of ceramic material.
The ceramic gasket 14 is sleeved on the outer side of the end cover 13 and used for limiting and adjusting the axial position of the end cover 13 fixedly connected with the insulating sleeve 7;
The hole grating is made of metal material (copper, silver and other metals with good conductivity), the thickness of the hole grating ranges from 0.1mm to 0.5mm, and a plurality of meshes of the hole grating are distributed in a spiral mode or in concentric circles. The porosity value range is 75% -95%, and the mesh diameter value range is 0.5 mm-2 mm. The hole grids and the insulating rings are alternately arranged in sequence, the axial distance between two adjacent hole grids is 3-6 mm, and the hole grids are used for creating a space for ions to pass through and preventing the hole grids from being electrically connected in series.
The collector 12 is replaced by the workpiece to be coated, so that plasma coating is performed on the workpiece to be coated. The collector 12 is a removable device that can be replaced with a part to be coated.
The front stage 1 is fixedly connected with the insulating sleeve 7 through a screw pair.
The insulating sleeve 7 is fixedly connected with the end cover 13 through a screw pair, and the whole ion screening device forms a multi-stage hole grating cavity structure.
The end cover 13 is made of brass, is of a two-stage stepped shaft structure, is provided with a through hole in the middle, is convenient for a tail wire to pass through, and is provided with external threads to be matched with the insulating sleeve 7. As shown in fig. 8, in the end cover 13 structure, the diameter of the outer circle of the large-end step is consistent with the outer diameter of the insulating sleeve 7, and the diameter of the outer circle of the small-section step is consistent with the inner diameter of the insulating sleeve 7.
The insulating sleeve 7 is made of ceramic, and the inner sides of the head part and the tail part are respectively provided with threads, and are connected with the front stage 1 and the end cover 13 through threads. As shown in FIG. 5, the ratio of the inner diameter to the outer diameter of the insulating sleeve 7 is in the range of 0.7 to 0.9.
In the embodiment of the invention, the insulating ring a2, the insulating ring b3, the insulating ring c4 and the insulating ring d5 are made of ceramic materials, the outer end of the ring is provided with a groove design, and a passage is reserved for a tail wire.
The ion current density testing method for ion energy sieving unit includes connecting wires to the terminals of hole grating a8, hole grating b9, hole grating c10 and hole grating d11, and applying different voltage values to different hole gratings according to practical requirement. The method comprises the following steps:
1) Applying a voltage of 0V to the hole gate a8, applying a negative bias to the hole gate b9 and the hole gate d11, and applying a scanning positive voltage of triangular waveform to the hole gate c10, wherein the negative bias applied to the hole gate b9 is higher than the negative bias applied to the hole gate d 11;
2) Starting an ion source, and measuring the current value at the collector 12 after plasma sequentially passes through the front stage 1 and the multi-cavity assembly;
3) Increasing the range of the scanning positive voltage of the triangular waveform applied to the aperture grid c10 according to the step length, and measuring the current value at the collector 12 again;
4) Repeating the step 3) to continuously increase the range of the scanning positive voltage of the triangular waveform applied to the hole grid c10 according to the step length until the current value of the collector 12 is 0, and then entering the step 5);
5) Obtaining the current value of the collector 12 obtained by applying the scanning positive voltages of triangular waveforms of different ranges to the aperture grid c10 as the corresponding ion current density.
In the embodiment of the invention, 0V voltage is applied to the hole grid a8 in the step 1), negative bias of-45V is applied to the hole grid b9, negative bias of-80V is applied to the hole grid d11, a scanning positive voltage with triangular waveform within 10V range is applied to the hole grid c10 for the first time in the step 1), the ion current density with ion energy larger than 10eV is obtained as the first obtained current value, the scanning positive voltage with triangular waveform within 20V range is applied to the hole grid c10 for the second time, the current value obtained for the second time is only the ion current density with ion energy larger than 20eV, the range of the hole grid c10 in two adjacent tests is increased by a step length DeltaV=10, and the ion energy density of each energy segment is obtained by the same.
The collector 12 is replaced by a part to be processed, and the ion energy screening device is utilized to screen out the ions with specified energy, so that the part to be processed is subjected to plasma coating.
The invention achieves the effect of removing electrons and screening ions by applying different voltages to the hole grids. And can be controlled to acquire ions having a range of ion energies. In the vacuum ion plating process, the method can be used for detecting the ion energy range and controlling the ion energy to obtain film layers with different physical properties.
FIG. 1 is a cross-sectional view of an ion energy screening apparatus according to an embodiment of the present invention. In this example, the ion screening apparatus comprises a pre-stage 1, an insulating ring, aperture grids, a collector 12 and an end cap 13. The insulating ring comprises an insulating ring a2, an insulating ring b3, an insulating ring c4, an insulating ring d5, an insulating ring e6, an insulating sleeve 7 and a hole grid comprising a hole grid a8, a hole grid b9, a hole grid c10 and a hole grid d11. In an embodiment of the invention, four hole grids and four insulating rings are alternately arranged, and the hole grids and the insulating rings are arranged in sequence, namely a hole grid a8, an insulating ring a2, a hole grid b9, an insulating ring b3, a hole grid c10, an insulating ring c4, a hole grid d11, an insulating ring d5, a collector 12 and an insulating ring e6.
The edges of the hole grating a8, the hole grating b9, the hole grating c10 and the hole grating d11 are respectively provided with binding posts. The ceramic pad 14 is provided with through holes, and the tails of the hole grids a8, b9, c10 and d11 can be allowed to pass through the through holes.
Fig. 2 is a schematic structural diagram of an ion energy screening apparatus according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a front stage in an embodiment of the present invention. The whole front stage 1 is of a hemispherical structure and is made of stainless steel, a through hole 11 is drilled at the top of the hemispherical structure, and a processing thread is arranged at the bottom of the hemispherical structure and matched with the insulating sleeve 7.
Fig. 4 is a schematic structural view of an insulating ring according to an embodiment of the present invention. The insulating ring a2 is made of ceramic, the hole grids are spaced to prevent the series connection phenomenon, a groove 21 is reserved at the outer end of the ring, and a corresponding tail line passage is reserved for the hole grids needing to be loaded with voltage. The outer diameter of the insulating ring a2 is in clearance fit with the insulating sleeve 7. D k-djyh≥5,Dk is the outer diameter of the aperture grid, and D jyh is the inner diameter of the insulating ring.
Fig. 5 is a schematic structural view of an insulating sleeve according to an embodiment of the present invention. Both ends of the insulating sleeve 7 are provided with threads, and are respectively connected with the front stage and the end cover.
As shown in fig. 6, which is a schematic diagram of a hole grating a8, the hole grating 8 is of a circular sheet structure, an insulating ring is arranged between the two hole gratings, and a plurality of through holes 81 are drilled on the insulating ring, so that screened ions can pass through conveniently. In one embodiment of the present invention, the plurality of mesh openings of the aperture grill are arranged in a spiral pattern. The first binding post 82 and the second binding post 83 are left on the hole grating a8, and the tail wire is connected to the first binding post and the second binding post, so that corresponding voltage is applied to the hole grating.
Fig. 7 is a schematic view of the structure of a collector according to an embodiment of the invention. Collector 12 is brass and is used to collect the screened ions, which can be replaced by the part to be machined.
Fig. 8 is a schematic view of the structure of the end cap in the example of the present invention. The end cover 13 is processed into a circular cover-shaped structure, and is in threaded connection with the insulating sleeve 7, so that the whole ion screening device forms an almost airtight space.
The using method of the ion screening device comprises the following steps:
the method comprises the steps of placing a material and an ion screening device in a vacuum chamber, ionizing the material to form an ion beam, driving the ion beam into the ion screening device through a top through hole of a front stage 1, enabling equal amounts of ions and electrons to initially pass through a hole grid a8 with the voltage of 0V to enter an insulating ring a2, loading negative bias with the voltage of-45V on a hole grid b9 to inhibit electrons entering the ion screening device from entering the insulating ring b3 through holes, applying scanning positive voltages with triangular waveforms in the range of 0-60V on a hole grid c10, enabling the changed voltages to filter ions with different kinetic energies, enabling only the ions with the kinetic energies larger than the product of the voltage on the hole grid c10 and the ion charge quantity to overcome repulsive force generated by potential difference, enabling the ions to pass through the hole grid c10 to enter the insulating ring c4, loading negative bias with the voltage of-80V on a hole grid d11, inhibiting secondary electrons, and applying attractive force to the screened ions to ensure that the ions can reach a collector 12 quickly and effectively. The collector 12 detects and analyzes the ion energy distribution state passing through the ion screening apparatus.
The collector 12 can be disassembled, and the collector 12 is replaced by a part to be processed, so that the ion energy can be controlled to obtain film layers with different physical properties.
In summary, the ion energy screening device in this embodiment combines the characteristics of vacuum ion coating, utilizes multistage hole gate structure to realize rejecting electrons, screens ion's effect, can obtain the ion of certain energy range more accurately, has overcome the problem that wait to process part coating film layer performance is not enough, has improved the efficiency of coating film, the compactness of rete. The ion energy screening device not only can realize an ion coating process, but also can detect and analyze the ion energy distribution state, and can more effectively and pertinently improve the performance of a film layer.
What is not described in detail in the present specification is a known technology to those skilled in the art.
Claims (10)
1. The ion energy screening device is characterized by comprising a front stage (1), an insulating ring, an insulating sleeve (7), a hole grid, a collector (12), an end cover (13) and a ceramic gasket (14);
the head of the insulating sleeve (7) is fixedly connected with a front stage (1), and a through hole for passing plasma is formed in the top end of the front stage (1);
N insulating rings and hole grids are axially arranged on the inner side of the insulating sleeve (7) at intervals to form a multi-cavity assembly, and the n insulating rings are used for axially limiting the n hole grids;
the hole grating is provided with a plurality of through holes which are used as meshes and used for allowing plasma to pass through;
the inner side of the insulating sleeve (7) is also provided with a collector (12), the collector (12) is positioned at the rear end of the multi-cavity assembly, the tail part of the insulating sleeve (7) is fixedly connected with an end cover (13), and an insulating ring is arranged between the end cover (13) and the collector (12), and the end cover (13) is used for sealing the tail part of the insulating sleeve (7);
a collector (12) for collecting the screened ions;
the ceramic gasket (14) is sleeved on the outer side of the end cover (13) and used for limiting and adjusting the axial position of the end cover (13) fixedly connected with the insulating sleeve (7).
2. The ion energy screening device according to claim 1, wherein the front stage (1) has a hemispherical structure, and the ratio of the diameter of the through hole at the top end of the front stage (1) to the sphere diameter is in the range of 0.3-0.6.
3. An ion energy screening device according to claim 1, characterized in that the insulating sleeve (7) is in a clearance fit with n+1 insulating rings;
The structural dimensions of the n+1 insulating rings are the same, the inner diameter of the insulating rings is equal to 70% -80% of the outer diameter, and the axial thickness of the insulating rings is 3-6 mm.
4. The ion energy screening device according to claim 1, wherein the pre-stage (1), the insulating ring and the insulating sleeve (7) are all made of ceramic materials, the aperture grid is made of metal materials, and the end cover (13) is made of brass materials.
5. The ion energy screening device according to any one of claims 1 to 4, wherein the thickness of the aperture grid is in a range of 0.1mm to 0.5mm;
The holes of the hole grating are distributed in a spiral mode or in concentric circles, the porosity value range is 75% -95%, and the hole diameter value range is 0.5 mm-2 mm.
6. The ion energy screening device according to claim 5, wherein the axial distance between two adjacent aperture grids is 3 mm-6 mm.
7. The ion energy screening device according to claim 6, wherein the ratio of the inner diameter to the outer diameter of the insulating sleeve (7) is in a range of 0.7 to 0.9.
8. An ion energy screening apparatus according to claim 7, wherein the collector (12) is removable for plasma coating the workpiece to be coated by replacing the collector (12) with the workpiece to be coated.
9. The method for ion current density testing of an ion energy screening device of claim 7, comprising the steps of:
1) Applying a voltage of 0V to the hole grating a (8), applying negative bias to the hole grating b (9) and the hole grating d (11), and applying a scanning positive voltage of triangular waveform to the hole grating c (10), wherein the negative bias applied to the hole grating b (9) is higher than the negative bias applied to the hole grating d (11);
2) Starting an ion source, and measuring the current value at a collector (12) after plasma sequentially passes through the front stage (1) and the multi-cavity assembly;
3) Raising the range of the scanning positive voltage of the triangular waveform applied by the aperture grid c (10), and measuring the current value at the collector (12) again;
4) Repeating the step 3) to continuously increase the range of the scanning positive voltage of the triangular waveform applied to the hole grid c (10) until the current value at the collector (12) is 0, and then entering the step 5);
5) When a scanning positive voltage of triangular waveforms in different ranges is applied to the aperture grid c (10), the current value of the obtained collector (12) is obtained as the corresponding ion current density.
10. A method of plasma coating a part to be processed, characterized in that the collector (12) is replaced by the part to be processed, and the ion energy screening device according to claim 8 is used for screening out the specified energy ions, so that the part to be processed is plasma coated.
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| CN202411361430.6A CN119381231B (en) | 2024-09-27 | 2024-09-27 | Ion energy screening device and method |
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| CN202411361430.6A CN119381231B (en) | 2024-09-27 | 2024-09-27 | Ion energy screening device and method |
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| US5565681A (en) * | 1995-03-23 | 1996-10-15 | Applied Materials, Inc. | Ion energy analyzer with an electrically controlled geometric filter |
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| US20220076933A1 (en) * | 2020-09-10 | 2022-03-10 | Impedans Ltd | Apparatus for ion energy analysis of plasma processes |
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| US20120211166A1 (en) * | 2003-02-04 | 2012-08-23 | Veeco Instruments Inc. | Ion sources and methods for generating an ion beam with controllable ion current density distribution |
| CN103534780A (en) * | 2011-03-28 | 2014-01-22 | 东京毅力科创株式会社 | Ion energy analyzer, methods of electrical signaling therein, and methods of manufacturing and operating the same |
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| CN209896025U (en) * | 2019-07-17 | 2020-01-03 | 中国科学技术大学 | Multi-grid ion energy analyzer and its probe |
| US20220076933A1 (en) * | 2020-09-10 | 2022-03-10 | Impedans Ltd | Apparatus for ion energy analysis of plasma processes |
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