CN119375525A - Wafer probe test calibration method, device, equipment, medium and product - Google Patents
Wafer probe test calibration method, device, equipment, medium and product Download PDFInfo
- Publication number
- CN119375525A CN119375525A CN202411948810.XA CN202411948810A CN119375525A CN 119375525 A CN119375525 A CN 119375525A CN 202411948810 A CN202411948810 A CN 202411948810A CN 119375525 A CN119375525 A CN 119375525A
- Authority
- CN
- China
- Prior art keywords
- wafer
- probe
- value
- height difference
- reference measurement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
本申请涉及一种晶圆探针测试校准方法、装置、设备、介质和产品，涉及半导体设备领域，方法包括：获取晶圆测试机台在探针卡上探针与晶圆上接触点之间处于零压力接触状态下的初始OD值、探针的长度值；获取晶圆上方的第一参考测量点与晶圆下方的第二参考测量点之间的第一高度差；获取第一参考测量点与晶圆顶面之间的第二高度差；获取探针卡底面与第二参考测量点之间的第三高度差；根据第一高度差、第二高度差、第三高度差以及长度值，计算探针底面与接触点的测量间距值；根据测量间距值对初始OD值校准，该方法能够消除WAT机差和产品膜厚对OD值设定的影响，同时根据校准得到的目标位移值监控产品膜层变化以及设备状态。
The present application relates to a wafer probe test calibration method, device, equipment, medium and product, and relates to the field of semiconductor equipment. The method comprises: obtaining an initial OD value and a length value of the probe of a wafer test machine when the probe on a probe card and a contact point on a wafer are in a zero-pressure contact state; obtaining a first height difference between a first reference measurement point above the wafer and a second reference measurement point below the wafer; obtaining a second height difference between the first reference measurement point and the top surface of the wafer; obtaining a third height difference between the bottom surface of the probe card and the second reference measurement point; calculating a measurement spacing value between the bottom surface of the probe and the contact point according to the first height difference, the second height difference, the third height difference and the length value; calibrating the initial OD value according to the measurement spacing value. The method can eliminate the influence of WAT machine error and product film thickness on OD value setting, and monitor product film layer changes and equipment status according to the target displacement value obtained by calibration.
Description
Technical Field
The present application relates to the field of semiconductor devices, and in particular, to a wafer probe test calibration method, apparatus, device, medium, and product.
Background
Wafer acceptability testing (WAFER ACCEPTANCE TEST, WAT), also known as electrical testing, enables advanced screening of chips with functional defects in a wafer by a wafer test station, and is a key test link for ensuring wafer product quality and reliability in integrated circuit manufacturing processes.
In WAT test, a test pad is disposed on a surface to be tested of a wafer, and contact points are formed on the surface to be tested of the wafer. The position of the probe card is kept unchanged, the bearing platform bears the wafer to move in the vertical direction, so that the contact point is gradually close to the probe, and after the bearing platform moves to a certain position, the contact point of the probe and the surface to be tested of the wafer is electrically connected, so that the electrical test on the wafer is realized, and the moving distance is called as the Over Drive (OD). Therefore, how to accurately set the OD value in the WAT test to ensure that the probe makes good contact with the contact point in the surface to be tested of the wafer is one of the important issues of attention of researchers.
Disclosure of Invention
Based on this, it is necessary to provide a wafer probe test calibration method, device, equipment, medium and product, aiming at the technical problems in the prior art, at least capable of avoiding the influence of machine difference and product film thickness on the set OD value in WAT test, and ensuring that the probe and the contact point in the surface to be tested of the wafer are in good contact.
In a first aspect, the application provides a wafer probe test calibration method, which comprises the steps of obtaining an initial OD value and a length value of a probe of a wafer test machine under a zero-pressure contact state between a probe on a probe card and a contact point on a wafer, obtaining a first height difference between a first reference measurement point on the wafer and a second reference measurement point below the wafer, obtaining a second height difference between the first reference measurement point and a wafer top surface, obtaining a third height difference between the bottom surface of the probe card and the second reference measurement point, calculating a measurement distance value between the bottom surface of the probe and the contact point according to the first height difference, the second height difference, the third height difference and the length value, and calibrating the initial OD value according to the measurement distance value.
In the wafer probe test calibration method in the above embodiment, the first height difference between the sensors, the second height difference between the sensors and the wafer contact point, and the third height difference of the bottom surface of the probe card may be measured by using the first sensor and the second sensor with high precision, and the distance between the bottom surface of the probe and the wafer contact point, that is, the measurement pitch value, may be calculated by combining the first height difference, the second height difference and the third height difference. And calibrating the initial OD value according to the measured distance value to obtain a target displacement value required by the movement of the bearing table along the direction towards the probe. After the bearing table controls the wafer to be tested to move towards the probe by a corresponding target displacement value, the probe is just contacted with the contact point of the wafer to be tested, so that unnecessary loss caused by virtual or oversbundle of the probe can be effectively avoided, and the service life of the probe is prolonged.
In the calibration method, a distance measurement technology is introduced for the machine difference and the product film layer in WAT test, and the designed algorithm can calibrate the initial OD value under the condition of neglecting the possible difference of different equipment, so that the step of repeatedly measuring the film layer thickness by the traditional calibration method is omitted. The method achieves the aims of reducing the calibration difficulty and workload, and eliminates the mechanical difference generated by the installation of sensors/probe cards of different devices and the influence of the film thickness of the product on the set OD value in WAT test. In addition, the initial OD value can be customized according to different products, and the calibration method does not limit the model or the form of the products, so that the method has good universality.
In some embodiments, the wafer probe test calibration method calculates the measured pitch value H of the probe bottom surface and the wafer top surface according to the following formula:
H=Hbase–Hpin;
Hbase=h2+h3-h1;
Hbase is a distance value between the bottom surface of the probe card and the top surface of the wafer, hpin is a length value of the probe, h1 is a first height difference, h2 is a second height difference, and h3 is a third height difference.
In some embodiments, the wafer probe test calibration method further comprises the steps of obtaining distance values of a plurality of different contact points of the wafer top surface and the bottom surface of the probe, calculating an average value of the distance values of the plurality of different contact points and the bottom surface of the probe, and determining a measurement distance value according to the average value.
In some embodiments, the wafer probe test calibration method further comprises periodically calibrating an initial OD value of the wafer test tool according to the preset period value.
The application further provides a wafer probe test calibration device which comprises a first sensor, a second sensor, a controller and an OD calibration device, wherein the first sensor is arranged above a wafer and is used for measuring a first height difference between a first reference measurement point above the wafer and a second reference measurement point below the wafer and a second height difference between the first reference measurement point and the wafer top surface, the second sensor is arranged below the wafer and is used for measuring a third height difference between the bottom surface of a probe card and the second reference measurement point, the controller is connected with the first sensor and the second sensor and is configured to obtain an initial OD value and a length value of the probe when a wafer test machine is in a zero-pressure contact state between a probe on the probe card and a contact point on the wafer, obtain the third height difference between the bottom surface of the probe card and the second reference measurement point according to the first height difference, the second height difference and the third height difference and the length value, calculate a measurement distance value between the probe and the bottom surface of the contact point, and the initial OD calibration value according to the measurement distance value.
In the wafer probe test calibration device in the above embodiment, the first sensor, the second sensor, and the two high-precision ranging sensors are respectively disposed above the probe card of the original wafer test machine and below the carrier. The controller is electrically connected with the first sensor and the second sensor. The wafer probe test calibration device has relatively simple structure, is only composed of a controller, a first sensor and a second sensor, and is simple and convenient to operate. Therefore, maintenance and repair costs of the device can be reduced, down time can be reduced, and availability and efficiency thereof can be improved.
In addition, the wafer probe test calibration device accurately measures and obtains a first height difference, a second height difference and a third height difference, and the first height difference, the second height difference and the third height difference comprise position offset values caused by machine installation, sensor installation, thermal deformation, vibration and the like and film thickness of the surface of a wafer. Therefore, under the condition of neglecting the thickness of the film and the mechanical difference, the calibration of the initial OD value can be directly realized by combining a calculation formula provided by the test calibration of the wafer probe, and the target displacement value is obtained.
In a third aspect, the present application further provides a wafer probe test calibration apparatus, including a memory and a processor, where the memory stores a computer program, and the processor implements the wafer probe calibration method in any one of the above embodiments when executing the computer program.
In a fourth aspect, the present application also provides a computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements the wafer probe calibration method of any of the above embodiments.
In a fifth aspect, the present application further provides a computer program product, including a computer program, which when executed by a processor implements the wafer probe calibration method of any of the above embodiments.
The wafer probe test calibration device, the computer readable storage medium and the computer program product in the above embodiments are all associated with the wafer probe test calibration method and the device. The wafer probe test calibration equipment is used for executing computer program codes for storing the wafer probe test calibration method and operating the wafer probe test calibration device to realize automatic calibration of an OD value, a computer readable storage medium is used for storing the computer program codes and data for executing the wafer probe test calibration method, the storage medium can be various types of media such as a hard disk, an optical disk and a U disk, and a computer program product comprises the computer program codes for calculating a measurement distance value in the wafer probe test calibration method. The program may be installed to run on a computer or other electronic device, directing the device to perform calibration tasks.
The unexpected technical effects that can be generated by the above embodiment include that the first height difference between the sensors, the second height difference between the sensors and the wafer contact point and the third height difference of the bottom surface of the probe card are measured by using the first sensor and the second sensor with high precision, and the distance between the bottom surface of the probe and the wafer contact point, namely the measured distance value, is calculated by combining the first height difference, the second height difference and the third height difference. And calibrating the initial OD value according to the measured distance value to obtain a target displacement value required by the movement of the bearing table along the direction towards the probe. After the bearing table controls the wafer to be tested to move towards the probe by a corresponding target displacement value, the probe is just contacted with the contact point of the wafer to be tested, so that unnecessary loss caused by virtual or oversbundle of the probe can be effectively avoided, and the service life of the probe is prolonged.
In summary, the wafer probe test calibration method, the device, the equipment, the medium and the product together form a complete wafer probe test calibration system, and important support is provided for the wafer probe test calibration method and the device.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a wafer probe test calibration method provided in one embodiment;
Fig. 2 is a schematic diagram corresponding to each of steps S202 to S212 in the wafer probe test calibration method according to an embodiment.
FIG. 3 is a schematic diagram illustrating a wafer top surface with a plurality of different contact points according to another embodiment of a wafer probe test calibration method.
Reference numerals illustrate:
10. First sensor, 20, second sensor, 30, probe card, 31, probe, 40, wafer, 50, plummer.
Detailed Description
In order that the application may be readily understood, a more complete description of the application will be rendered by reference to the appended drawings. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used in the description of the disclosure herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
It will be understood that when an element or layer is referred to as being "on," "connected to," or "coupled to" another element or layer, it can be directly on, connected or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.
Spatially relative terms, such as "under", "below", "beneath", "under", "above", "over" and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "under" or "beneath" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "below" and "under" may include both an upper and a lower orientation. Furthermore, the device may also include an additional orientation (e.g., rotated 90 degrees or other orientations) and the spatial descriptors used herein interpreted accordingly.
As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. Also, as used herein, the term "and/or" includes any and all combinations of the associated listed items.
Traditional WAT testing relies on calculating the film thickness, and setting the OD value manually according to the film thickness rules. In the method for setting the OD value, corresponding OD values are set in stages according to the thickness of the film manufactured on the wafer, for example, when the thickness of the film is not smaller than the thickness A, the initial OD value is 55 micrometers, when the thickness of the film is smaller than the thickness A and larger than the thickness B (B < A), the initial OD value is 60 micrometers, and when the thickness of the film is not larger than the thickness B, the initial OD value is 65 micrometers.
However, in the device film layer morphology of the wafer is different, in the same stage, the same OD is adopted, the product with larger film thickness can be overstretched, so that the probe is bent and/or the contact point of the surface to be tested of the wafer is damaged, and the product with smaller film thickness can be virtually pricked, so that the WAT test is invalid. In addition, the same initial OD value is adopted on different devices of the same product, and due to the existence of machine difference, the set OD value or certain deviation exists, so that some devices can be overstocked, and some devices can be virtually-pricked.
Therefore, insufficient classification may affect the accuracy of film thickness calculation, and too complicated classification may increase the calibration workload. The method has the advantages that a certain error is brought to an OD value, the problem of poor contact quality of a contact point of a probe and a wafer surface to be tested is caused, deviation is caused to evaluation of quality and reliability of a wafer finished product, and accuracy, stability and reliability of WAT test are affected. The calibration method for the WAT test system in the current mainstream generally starts from the film thickness of the device layer, ignores the mechanical difference introduced by installing the calibration device, and increases the risk of false detection and omission in the WAT test. Thus, the method is applicable to a variety of applications. The influence of film thickness difference and machine difference is comprehensively considered, and an OD setting method is improved, so that contact of a probe to a wafer is ensured to be proper, and defect rate and false detection rate are reduced.
Based on the above, the application provides a wafer probe test calibration method, which comprises steps S202-S212. Please refer to fig. 1. It should be understood that, although the steps in the flowchart of fig. 1 are shown in sequence as indicated by the arrows, the steps are not necessarily performed in sequence as indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least a portion of the steps in fig. 1 may include a plurality of steps or stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of the steps or stages is not necessarily sequential, but may be performed in rotation or alternatively with at least a portion of the steps or stages in other steps or other steps.
For the sake of understanding the present application, fig. 2 is a schematic diagram corresponding to each step of steps S202-S212 in the wafer probe test calibration method of the present application, and it should be noted that, the illustration provided in the present embodiment is only for illustrating the basic idea of the present disclosure, and only the components related to the present disclosure are shown in the illustration, rather than the number, shape and size of the components in actual implementation, and the type, number and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complex.
The technical scheme of the application is described in detail below with reference to the examples and the accompanying drawings.
Step S202, obtaining an initial OD value and a length value of the probe 31 of the wafer test machine under a zero-pressure contact state between the probe 31 on the probe card 30 and a contact point on the wafer 40.
For example, referring to FIG. 2, the wafer test machine includes a probe card 30 configured to be fixedly positioned directly above a carrier 50, opposite to a wafer 40, for fixing probes 31, and probes 31 configured to have a top surface electrically connected to the probe card and a bottom surface having a free end and vertically suspended for applying test signals to contact points in a surface to be tested of the wafer 40. The plurality of probes 31 having the same length value are uniformly distributed on the probe card 30, and the carrier 50 is disposed below the probe card 30 to face the probe card 30. For carrying and moving the wafer 40, and performing lifting movement along a predetermined direction, i.e. a direction towards the probe 31, so as to adjust the position of the wafer 40, and make the wafer 40 contact with the probe 31 to generate electrical connection. In addition to the structure shown in fig. 2, the wafer test machine further includes a clamping device for supporting and connecting the probe card 30, and a lower support for supporting the carrier 50, wherein the clamping device and the lower support are electrically connected with the main structure of the wafer test machine.
For example, the initial OD value may be set differently according to different products, so long as it is ensured that after the wafer 40 moves toward the probe 31 according to the initial OD value, the contact point in the surface to be tested of the wafer 40 is not in contact with the probe tip 31, i.e. the contact point and the contact point are in a zero-pressure contact state. The length value of the probe 31 is a fixed value which is preset, and hardly changes during the test except for damage, which is not repeated here.
Step S204, a first height difference between a first reference measurement point above the wafer 40 and a second reference measurement point below the wafer 40 is obtained.
By way of example, the wafer probe test calibration device provided in the present application is used to measure the first height difference, which in this embodiment is h1.
For example, referring to FIG. 2, the wafer probe test calibration apparatus includes a first sensor 10 configured to be disposed above a wafer 40 for measuring a first height difference h1 between a first reference measurement point above the wafer 40 and a second reference measurement point below the wafer 40, and a second sensor 20 configured to be disposed below the wafer 40.
In this embodiment, the horizontal line of the first reference measurement point is flush with the horizontal line of the transmitting end of the first sensor 10, and the horizontal line of the second reference measurement point is flush with the horizontal line of the transmitting end of the second sensor 20. The first height difference h1 represents a distance between the first sensor 10 and the second sensor 20 disposed opposite to each other in a direction perpendicular to the moving path of the wafer 40.
Step S206, a second height difference between the first reference measurement point and the top surface of the wafer 40 is obtained.
Illustratively, in the present embodiment, the second height difference is h2.
For example, referring to fig. 2, in some embodiments, the wafer probe test calibration apparatus further includes a horizontal slide rail (not shown), the extending directions of the two slide rails are perpendicular to the direction facing the surface of the wafer 40, and the first sensor 10 and the second sensor 20 can move horizontally along the slide rails, so as to ensure that the first height difference h1 is unchanged during the movement. Of course, other moving means may be used to drive the first sensor 10 and the second sensor 20 to translate under the condition that the distance is kept unchanged.
In some embodiments, the wafer probe test calibration device may further include a vertical sliding rail with an extension direction parallel to a moving direction of the wafer 40, and in cooperation with wafer test machine tables of different types, the first sensor 10 and the second sensor 20 are controlled to move by corresponding compensation distances, so that the position positioning standard is consistent during subsequent calibration, and flexibility and adaptability of the wafer probe test calibration device are improved. In practical use, the wafer probe test calibration device can be added with other components, and the reasonability of the structure is only required to be ensured, and the device is not limited in the embodiment.
For example, referring to fig. 2, the first sensor 10 in the wafer probe test calibration apparatus is used to obtain the distance between the transmitting end of the first sensor 10 and the top surface of the wafer 40, and the second height difference h2 is used to represent the distance, wherein the second height difference h2 should be not less than the length value of the probe 31.
Step S208, a third height difference between the bottom surface of the probe card 30 and the second reference measurement point is obtained.
Illustratively, in the present embodiment, the third height difference is h3.
For example, referring to fig. 2, the second sensor 20 in the wafer probe test calibration apparatus is used to obtain the distance between the transmitting end of the second sensor 20 and the bottom surface of the probe card 30, and the third height difference h3 is used to represent the distance. In the measurement process, the first sensor 10, the second sensor 20, and the carrying platform 50 need to maintain a static state, so as to ensure consistency of the first, second, and third height differences.
Step S210, calculating the measurement distance between the bottom surface of the probe 31 and the contact point according to the first height difference, the second height difference, the third height difference and the length value.
For example, please continue to refer to fig. 2, in the present embodiment, the measurement pitch value is H. The measured distance value H between the bottom surface of the probe 31 and the top surface of the wafer 40 is calculated according to the following formula:
H=Hbase–Hpin;
Hbase=h2+h3-h1;
Hbase is a distance value between the bottom surface of the probe card 30 and the top surface of the wafer 40, hpin is a length value of the probe 31, H1 is a first height difference, H2 is a second height difference, H3 is a third height difference, and the measured distance value H represents a distance between the bottom surface of the probe 31 and a contact point of the wafer 40, i.e. an OD value which needs to be compensated for an initial OD value. Because the first height difference, the second height difference and the third height difference include the offset value caused by the machine difference between the first sensor 10, the second sensor 20 and/or the probe card 30 of different devices and the film thickness corresponding to the device layer on the wafer 40, the measured distance value H calculated according to the formula can eliminate the influence of the machine difference caused during WAT installation on the basis of omitting the measured film thickness.
Step S212, calibrating the initial OD value according to the measured distance value.
Illustratively, the measured pitch value H determines the amount of sag or bulge of the carrier 50 carrying the wafer 40, and a calibrated target displacement value is obtained by calculating the sum of the initial OD value and the measured pitch value H. At this time, the wafer test machine controls the wafer 40 to move toward the probe 31 by a corresponding distance according to the fed-back target displacement value, so as to accurately set the OD value in the WAT test. The calibrated target displacement value can effectively avoid the problems of bending deformation of the probe 31 or damage of the contact point of the surface to be tested of the wafer 40 caused by virtual or excessive penetration of the probe 31 into the wafer 40, ensure the reliability of WAT test, reduce the defect rate and the false detection rate, and prolong the service life of the probe 31.
Referring to fig. 3, in some embodiments, a distance value between a plurality of different contact points on the top surface of the wafer 40 and the bottom surface of the probe 31 is obtained, an average value of the distance values between the plurality of different contact points and the bottom surface of the probe 31 is calculated, and a measurement distance value H is determined according to the average value.
For example, a plurality of contact points on the top surface of the wafer 40 are selected, and steps S206-S212 are repeated, wherein the distance between the contact points and the bottom surface of the probe 31 corresponds to the measured distance H in step S210. The average value of the distance values H of a plurality of different contact points is calculated, so that deviation generated by measurement of a single contact point can be effectively eliminated, influence possibly caused by external factors such as vibration of wafer test calibration equipment in the calibration process is offset, stability and reliability of the calibration process are ensured, and accuracy of the wafer probe calibration method is improved.
With continued reference to fig. 3, in the present embodiment, five contact points of the surface to be measured of a wafer 40 are selected, and measured, and an average value thereof, that is, OD average value= (od1+od2+od3+od4+od5)/5, is obtained, and the average value of the distance values between the surface of the wafer 40 to be measured and the bottom surface of the probe 31 is determined, and the measured distance value H is determined according to the average value.
In some embodiments, after obtaining the target displacement value, the method further includes inputting the target displacement value and starting the wafer test machine, and operating the carrier 50 so that the wafer 40 moves with the probe 31 with the preset target displacement value, where the calibrated target displacement value can ensure that good contact is formed between the probe 31 and the wafer 40, which is helpful for implementing subsequent electrical tests.
In some embodiments, the wafer probe test calibration method further comprises periodically calibrating an initial OD value of the wafer test tool according to the preset period value.
The period value may be set according to specific requirements, including but not limited to calibrating the first piece, each piece, every other piece of each batch of the same product, or every few batches, or every month, or the first batch within a certain period of time, freely setting the calibration frequency. By setting the computer program, the wafer probe test calibration device can flexibly set the calibration frequency according to the requirement, and automatically calibrate according to the wafer probe test calibration method in any one of the embodiments. The fluctuation range of the target displacement value after the same product calibration is observed, the change condition of the hardware spacing or the wafer device layer film thickness in the wafer test machine is monitored and tracked, and a basis is provided for replacement and preparation of spare parts. Adding an automation and monitoring mechanism can ensure the continuity of the accuracy of the wafer probe test calibration method.
Referring to FIG. 2, the present application provides a wafer probe test calibration device, which comprises a first sensor 10 disposed above a wafer 40 for measuring a first height difference h1 between a first reference measurement point above the wafer 40 and a second reference measurement point below the wafer 40, and a second height difference h2 between the first reference measurement point and a top surface of the wafer 40, a second sensor 20 disposed below the wafer 40 for measuring a third height difference h3 between a bottom surface of a probe card 30 and the second reference measurement point, and a controller connected to the first sensor 10 and the second sensor 20 and configured to obtain an initial OD value of a wafer test machine in a zero pressure contact state between a probe 31 on the probe card 30 and a contact point on the wafer 40, and a length value of the probe 31;
the first height difference h1 and the second height difference h3 are obtained, the third height difference h3 between the bottom surface of the probe card 30 and the second reference measurement point is obtained, the measurement distance value between the bottom surface of the probe 31 and the contact point is calculated according to the first height difference h1, the second height difference h2 and the third height difference h3 and the length value, and the initial OD value is calibrated according to the measurement distance value.
Illustratively, the first sensor 10 and the second sensor 20 are high-precision distance measuring sensors, including but not limited to optical distance measuring devices such as laser distance measuring sensors or infrared distance measuring sensors. The controller is electrically connected to the sensors for driving the first sensor 10 and the second sensor 20 to move.
The application also provides wafer probe test calibration equipment, which comprises a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to realize the wafer probe calibration method in any embodiment.
The present application also provides a computer readable storage medium having stored thereon a computer program which when executed by a processor implements the wafer probe calibration method of any of the above embodiments.
The application also provides a computer program product comprising a computer program which when executed by a processor implements the wafer probe calibration method of any of the above embodiments.
The application provides wafer probe test calibration equipment based on a wafer probe test calibration method and a wafer probe test calibration device, a computer readable storage medium and a computer program product, wherein the computer program product comprises computer codes for executing the wafer probe test calibration method, the computer readable storage medium stores the computer program product, and finally the computer program product is executed by the wafer probe test calibration equipment assembled with the computer readable storage medium.
In the above embodiments, the unexpected technical effects that the present application can produce include:
According to the set program, according to the first height difference, the second height difference, the third height difference and the length value of the probe, the distance value from the contact point of the test wafer to the bottom surface of the probe is calculated by calculating the measured distance value of the bottom surface of the probe and the contact point. The method can set different products differently, can provide a more specific target displacement value for different products instead of a fixed value in a certain range, ensures that all products are in a good measuring state, and has good universality. In addition, the wafer probe test calibration method and device also comprise the functions of automatic calibration and monitoring of target displacement values, and the like, can automatically calibrate initial OD values at regular time or quantitatively, ensure proper contact between the probe and a contact point on a wafer surface to be tested, avoid the occurrence of conditions such as firing pins or poor contact, and the like, and reduce the workload of calibration staff without manual operation and offline adjustment. The change fluctuation of the target displacement value is observed, so that the change condition of the internal hardware space of the wafer test machine is monitored, and a basis is provided for replacement and preparation of spare parts.
The wafer probe test device, the equipment, the computer readable storage medium and the computer program product together form a complete wafer probe test calibration system, and important support is provided for realizing the wafer probe test calibration method.
The technical features of the above embodiments may be arbitrarily combined, and for brevity, all of the possible combinations of the technical features of the above embodiments are not described, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the claims. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411948810.XA CN119375525A (en) | 2024-12-27 | 2024-12-27 | Wafer probe test calibration method, device, equipment, medium and product |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411948810.XA CN119375525A (en) | 2024-12-27 | 2024-12-27 | Wafer probe test calibration method, device, equipment, medium and product |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN119375525A true CN119375525A (en) | 2025-01-28 |
Family
ID=94330821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202411948810.XA Pending CN119375525A (en) | 2024-12-27 | 2024-12-27 | Wafer probe test calibration method, device, equipment, medium and product |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN119375525A (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05315412A (en) * | 1992-05-12 | 1993-11-26 | Nec Kyushu Ltd | Judging method for contact point |
| CN1336549A (en) * | 2000-05-31 | 2002-02-20 | 株式会社鼎新 | Probe contacting system having plane adjusting mechanism |
| US20070159194A1 (en) * | 2006-01-10 | 2007-07-12 | Yoshiei Hasegawa | Probing apparatus |
| US20070229098A1 (en) * | 2006-03-30 | 2007-10-04 | Tokyo Electron Limited | Detection method of probe's tip location, storage medium storing the method, and probe device |
| JP2011222851A (en) * | 2010-04-13 | 2011-11-04 | Tokyo Seimitsu Co Ltd | Wafer test method and prober |
| KR101471778B1 (en) * | 2013-07-23 | 2014-12-10 | 세메스 주식회사 | Jig for detecting actual contact position between needles of probe card and wafer and method of detecting the actual contact position using the same |
| JP2016058506A (en) * | 2014-09-09 | 2016-04-21 | 東京エレクトロン株式会社 | Pressure set point determination method for inspection in wafer inspection device |
| JP2017183721A (en) * | 2016-03-28 | 2017-10-05 | 株式会社東京精密 | Probe card inclination detection method and prober |
| CN115407176A (en) * | 2022-10-31 | 2022-11-29 | 长春光华微电子设备工程中心有限公司 | Calibration method for needle cleaning height difference and probe station |
| CN118538626A (en) * | 2024-04-18 | 2024-08-23 | 矽电半导体设备(深圳)股份有限公司 | Wafer test height determining method, device and system, equipment and storage medium |
-
2024
- 2024-12-27 CN CN202411948810.XA patent/CN119375525A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05315412A (en) * | 1992-05-12 | 1993-11-26 | Nec Kyushu Ltd | Judging method for contact point |
| CN1336549A (en) * | 2000-05-31 | 2002-02-20 | 株式会社鼎新 | Probe contacting system having plane adjusting mechanism |
| US20070159194A1 (en) * | 2006-01-10 | 2007-07-12 | Yoshiei Hasegawa | Probing apparatus |
| US20070229098A1 (en) * | 2006-03-30 | 2007-10-04 | Tokyo Electron Limited | Detection method of probe's tip location, storage medium storing the method, and probe device |
| JP2011222851A (en) * | 2010-04-13 | 2011-11-04 | Tokyo Seimitsu Co Ltd | Wafer test method and prober |
| KR101471778B1 (en) * | 2013-07-23 | 2014-12-10 | 세메스 주식회사 | Jig for detecting actual contact position between needles of probe card and wafer and method of detecting the actual contact position using the same |
| JP2016058506A (en) * | 2014-09-09 | 2016-04-21 | 東京エレクトロン株式会社 | Pressure set point determination method for inspection in wafer inspection device |
| JP2017183721A (en) * | 2016-03-28 | 2017-10-05 | 株式会社東京精密 | Probe card inclination detection method and prober |
| CN115407176A (en) * | 2022-10-31 | 2022-11-29 | 长春光华微电子设备工程中心有限公司 | Calibration method for needle cleaning height difference and probe station |
| CN118538626A (en) * | 2024-04-18 | 2024-08-23 | 矽电半导体设备(深圳)股份有限公司 | Wafer test height determining method, device and system, equipment and storage medium |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100851419B1 (en) | How to contact prober and probe | |
| US7368929B2 (en) | Methods and apparatuses for improved positioning in a probing system | |
| TWI431288B (en) | Prober, method and apparatus for positioning in a prober, and computer readable medium thereof | |
| KR100657105B1 (en) | Probing method and probing apparatus | |
| KR101099990B1 (en) | Probe Devices, Probing Methods, and Recording Media | |
| CN111192837B (en) | Method for testing warping degree of wafer | |
| CN112735967A (en) | Testing method for wafer temperature change test | |
| JP2018117095A (en) | Contact method of prober and probe needle | |
| JP2020047849A (en) | Inspection device and inspection method | |
| CN119375525A (en) | Wafer probe test calibration method, device, equipment, medium and product | |
| JP2008116354A (en) | Warpage measurement system, film formation system, and warpage measurement method | |
| US20180267097A1 (en) | Ic test system | |
| CN107340614A (en) | System and method for detecting or correcting position | |
| JP4878919B2 (en) | Prober and probing method | |
| JP4878918B2 (en) | Prober and probing method | |
| JPH10150081A (en) | Probing method and prober | |
| JP6157270B2 (en) | Probe apparatus and probe method | |
| CN114119709A (en) | A robot measuring device and method for in-situ measurement of low temperature profiles | |
| JP2008117968A (en) | Prober | |
| CN117476529B (en) | Probe calibration method, probe calibration device, electronic equipment and storage medium | |
| JP2007095938A (en) | Tester, prober, wafer test system and electrical contact position detection method | |
| CN119354020A (en) | A spray surface deformation measurement device and method | |
| KR20250008274A (en) | System for diagnosing a prober | |
| CN116907417A (en) | Flatness detection method, system and storage medium | |
| CN116136564A (en) | Test device and working method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |