CN119328665A - A process for flattening the surface metal after filling the through-glass via process - Google Patents
A process for flattening the surface metal after filling the through-glass via process Download PDFInfo
- Publication number
- CN119328665A CN119328665A CN202411552578.8A CN202411552578A CN119328665A CN 119328665 A CN119328665 A CN 119328665A CN 202411552578 A CN202411552578 A CN 202411552578A CN 119328665 A CN119328665 A CN 119328665A
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- CN
- China
- Prior art keywords
- polishing
- metal
- product
- materials
- planarizing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 title claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000011521 glass Substances 0.000 title claims abstract description 20
- 238000005498 polishing Methods 0.000 claims abstract description 64
- 239000000463 material Substances 0.000 claims abstract description 28
- 239000000126 substance Substances 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- 239000013043 chemical agent Substances 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 abstract description 9
- 239000007788 liquid Substances 0.000 abstract description 3
- 239000012467 final product Substances 0.000 abstract 1
- 238000005259 measurement Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
本发明公开了一种玻璃通孔工艺填孔后表面金属平坦化的工艺。本发明在现有的化学机械平坦化抛光前，增加了机械研磨抛光，砖石研磨垫硬度高，不会变形，并且抛光液中不含腐蚀性的化学药剂，不会对金属产生化学反应，所以在抛光过程中，可以保证只有抛光表面凸起的部分进行抛光，抛光结束后两种材料间几乎没有高度差存在；同时由于进行精抛光时表面已经处于相对较平的状态，精抛光只需保持两种材料的去除速率的一致性即可保证最终成品两种材料间高度差达到很小的水平；并且缩短了化学机械抛光的时间，有效的降低成本。
The present invention discloses a process for flattening the surface metal after filling a through-glass hole process. The present invention adds mechanical grinding and polishing before the existing chemical mechanical flattening polishing. The masonry grinding pad has high hardness and will not deform. The polishing liquid does not contain corrosive chemicals and will not produce chemical reactions on the metal. Therefore, during the polishing process, it can be ensured that only the raised part of the polishing surface is polished, and there is almost no height difference between the two materials after the polishing is completed. At the same time, since the surface is already in a relatively flat state during fine polishing, the fine polishing only needs to maintain the consistency of the removal rate of the two materials to ensure that the height difference between the two materials of the final product reaches a very small level. In addition, the time of chemical mechanical polishing is shortened, effectively reducing the cost.
Description
Technical Field
The invention relates to the technical field of metal planarization and polishing, in particular to a process for flattening surface metal after filling holes in a glass through hole process.
Background
After the product is filled with holes through electroplating, an uneven metal layer can be remained on the surface of a wafer, and a planarization polishing process is needed to be carried out by chemical mechanical polishing, and the existing chemical mechanical planarization polishing process has two problems:
1. in order to improve the polishing efficiency of metal, a corresponding corrosive chemical agent is generally added into the polishing solution, so that pits on the surface of a wafer can also react with the polishing solution, and cannot be polished, as shown in fig. 1;
2. After the surface metal is thrown away, two different materials are required to be polished simultaneously, and the difference of processing speed exists, so that the height difference exists between the two materials;
In summary, the height difference between the two materials in the prior art can only be controlled to 50-100 nm, as shown in fig. 2.
With the gradual increase of product requirements, the conventional metal chemical mechanical polishing planarization process cannot meet the product requirements, and based on the above problems, a new process for planarizing the surface metal after filling holes by a glass through hole process needs to be developed, so that the height difference between two materials is reduced, and the product requirements are met.
Disclosure of Invention
In order to solve the technical problems, the invention designs a process for flattening the surface metal after filling holes by a glass through hole process. The height difference between two materials in the surface metal chemical mechanical polishing process after the hole filling of the existing glass through hole process is reduced, the product performance is improved, and the industry competitiveness is maintained.
The invention adopts the following technical scheme:
a process for flattening metal on the surface of a glass through hole after filling holes by the process comprises the following steps:
S1, mechanically grinding and rough polishing, namely mechanically grinding and rough polishing the metal on the surface of a product for a certain time by using a diamond grinding pad and matching with 2 mu m alumina powder, and thinning the thickness of the metal on the surface of the product to ensure that the height difference of the surface of the product after polishing is less than 5nm;
S2, chemical mechanical polishing, namely, polishing the surface metal residual part by using 100nm silicon oxide polishing solution and matching with a polyurethane polishing pad, removing and improving roughness, and adding corresponding proportion of corrosive chemical agents to perform chemical reaction on the metal according to the selection ratio of two processing materials in the product, so that the removal rate of the two materials is kept at a similar level, and the height difference between the two materials on the surface of the polished product is less than 10nm.
Preferably, in the step S1, the time of the mechanical grinding and rough polishing is 15 to 30 minutes.
Preferably, in the step S1, the thickness of the metal on the surface of the thinned product is 10-20 μm.
Preferably, in the step S2, the time of the chemical mechanical polishing is 10 to 20 minutes.
Preferably, in the step S2, the removal amount of the product surface thickness is 5-10 μm.
Preferably, the metal on the surface of the product is copper, and the substrate material of the product is glass.
Preferably, in the step S2, the chemical agent added is hydrogen peroxide.
Preferably, the ratio of the polishing solution to the hydrogen peroxide is 100:7.5.
The polishing pad has the advantages that before the existing chemical mechanical planarization polishing, mechanical polishing is added, the hardness of the masonry polishing pad is high, deformation is avoided, corrosive chemical agents are not contained in the polishing liquid, chemical reaction is not generated on metal, only the protruding part of the polishing surface can be guaranteed to be polished in the polishing process, almost no height difference exists between two materials after polishing is finished, meanwhile, the surface is in a relatively flat state when the fine polishing is carried out, the consistency of the removal rates of the two materials is kept, the height difference between two materials of a final finished product can be guaranteed to be very small, the chemical mechanical polishing time is shortened, and the cost is effectively reduced.
Drawings
FIG. 1 is a schematic diagram of a conventional chemical mechanical planarization polishing process;
FIG. 2 is a measurement of the difference in height between two materials after a prior art chemical mechanical planarization polishing process;
FIG. 3 is a measurement of the height difference of the surface of the product after rough polishing by mechanical lapping in accordance with the present invention;
FIG. 4 is a graph of a measurement of the difference in height between two materials after chemical mechanical polishing in accordance with the present invention;
Fig. 5 is a schematic structural view of a planarization polishing process of the present invention.
Detailed Description
The technical scheme of the invention is further specifically described by the following specific embodiments with reference to the accompanying drawings:
embodiment as shown in FIG. 5, a process for flattening surface metal after filling holes by glass through hole process comprises the following steps:
S1, mechanically grinding and rough polishing, namely mechanically grinding and rough polishing the metal on the surface of a product for a certain time by using a diamond grinding pad and matching with 2 mu m alumina powder, wherein the polishing time is 15-30 minutes, the removal amount is 10-20 mu m, and the height difference of the polished product surface is less than 5nm, as shown in figure 3;
S2, chemical mechanical polishing, namely, polishing the surface metal residual part by using 100nm silicon oxide polishing solution and matching with a polyurethane polishing pad, removing and improving roughness, and adding corrosive chemical agents in corresponding proportion to perform chemical reaction on the metal according to the selection ratio of two processing materials in the product, so as to ensure that the removal rate of the two materials is kept at a similar level, wherein the polishing time is 10-20 minutes, the removal amount is 5-10 mu m, and the height difference between the two materials on the surface of the polished product is less than 10nm, as shown in figure 4. The metal on the surface of the product verified in the invention is copper, and the substrate material of the product is glass. The added chemical agent is hydrogen peroxide. The ratio of the polishing solution to the hydrogen peroxide is 100:7.5.
The polishing method has the advantages that before the existing chemical mechanical planarization polishing, mechanical polishing is added, the hardness of the masonry polishing pad is high, the masonry polishing pad cannot be deformed, corrosive chemical agents are not contained in the polishing liquid, and chemical reactions cannot be generated on metal, so that only the protruding part of the polishing surface can be guaranteed to polish in the polishing process, almost no height difference exists between two materials after polishing is finished, meanwhile, the surface is in a relatively flat state when the fine polishing is carried out, the height difference between two materials of a final finished product can be guaranteed to reach a small level only by keeping the consistency of the removal rates of the two materials, the chemical mechanical polishing time is shortened, and the cost is effectively reduced.
The above-described embodiment is only a preferred embodiment of the present invention, and is not limited in any way, and other variations and modifications may be made without departing from the technical aspects set forth in the claims.
Claims (8)
1. A process for flattening metal on the surface of a glass through hole after filling holes is characterized by comprising the following steps:
S1, mechanically grinding and rough polishing, namely mechanically grinding and rough polishing the metal on the surface of a product for a certain time by using a diamond grinding pad and matching with 2 mu m alumina powder, and thinning the thickness of the metal on the surface of the product to ensure that the height difference of the surface of the product after polishing is less than 5nm;
S2, chemical mechanical polishing, namely, polishing the surface metal residual part by using 100nm silicon oxide polishing solution and matching with a polyurethane polishing pad, removing and improving roughness, and adding corresponding proportion of corrosive chemical agents to perform chemical reaction on the metal according to the selection ratio of two processing materials in the product, so that the removal rate of the two materials is kept at a similar level, and the height difference between the two materials on the surface of the polished product is less than 10nm.
2. The process for planarizing a surface metal after hole filling by a glass via process according to claim 1, wherein in the step S1, the time for mechanical lapping and rough polishing is 15 to 30 minutes.
3. The process for planarizing a surface metal after hole filling by a glass via process according to claim 1, wherein in the step S1, the thickness of the surface metal of the thinned product is 10-20 μm.
4. The process for planarizing a surface metal after hole filling by a glass via process according to claim 1, wherein in the step S2, the time for chemical mechanical polishing is 10 to 20 minutes.
5. The process for planarizing a surface metal after hole filling by a glass via process according to claim 1, wherein in the step S2, the removal amount of the product surface thickness is 5-10 μm.
6. The process for planarizing a surface metal after hole filling by a glass via process according to claim 1, wherein the metal on the surface of the product is copper and the substrate material of the product is glass.
7. The process for planarizing a surface metal after hole filling by a glass via process according to claim 1, wherein in the step S2, the chemical agent added is hydrogen peroxide.
8. The process for planarizing a surface metal after hole filling by a glass via process as claimed in claim 7, wherein the ratio of the polishing solution to the hydrogen peroxide is 100:7.5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411552578.8A CN119328665A (en) | 2024-11-01 | 2024-11-01 | A process for flattening the surface metal after filling the through-glass via process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411552578.8A CN119328665A (en) | 2024-11-01 | 2024-11-01 | A process for flattening the surface metal after filling the through-glass via process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN119328665A true CN119328665A (en) | 2025-01-21 |
Family
ID=94271157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202411552578.8A Pending CN119328665A (en) | 2024-11-01 | 2024-11-01 | A process for flattening the surface metal after filling the through-glass via process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN119328665A (en) |
-
2024
- 2024-11-01 CN CN202411552578.8A patent/CN119328665A/en active Pending
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