CN1193114C - 等离子聚合装置中的供气和排气系统 - Google Patents
等离子聚合装置中的供气和排气系统 Download PDFInfo
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Abstract
本发明提供了一种等离子聚合装置,其包括至少一个室,在该室中要涂布的片可以连续移动;至少一个向该室供应反应性气体的气体入口;和至少一个将反应性气体排出该室的气体出口,其中气体入口和气体出口以这样的方式设置在室上,即反应性气体的流动方向基本上与板的移动方向平行。
Description
技术领域
本发明涉及用于等离子聚合装置的供气和排气系统,特别涉及用于其中气体的供应和排放与通过等离子聚合涂布的基材的流动方向有相同方向的等离子聚合装置的供气和排气系统。
背景技术
如果基材表面例如钢板表面上涂布上一层等离子体薄层,就能形成具有良好稠度和抗磨性的疏松层(stratum tectorium)。具有疏松层的产物用作磁盘,光盘,硬质合金工具等物。同时,如果钢板上生成的涂漆薄膜经过等离子体处理,那么未增塑漆涂布的钢板将具有良好的耐久性和耐腐蚀性。特别是,通过处理,能够增强表面性能,通过聚合物聚合基材表面而增强了亲水性和疏水性,性能提高了的物质广泛地在应用。
作为示例,图1是能完成等离子聚合处理的装置的剖面图。特别地,该装置有利于在基材上大面积地涂布薄膜。同时,在基材电极的两侧安上异性电极,同时发生聚合可能因而提高了生产率。在该装置中,绕成卷的基材2从退绕室连续不断地向聚合室1进料,在聚合室中对基材表面聚合处理后,基材3加进卷绕室10,然后绕成卷。通过反应性气体入口7向保持一定真空状态的聚合室中加入反应性气体,基材上下表面的异性电极4通电产生等离子体。当室中发生等离子体放电时,反应性气体分子的键断裂,然后断裂的链和激活的阳离子及阴离子结合形成聚合材料。在聚合室的一侧,安装反应后气体的出口8。
对于连续处理装置,如果气体入口和气体出口安装在聚合室内,常规时并不考虑排列的关系,它们的设置方式使得气流形成的方向与聚合中基材流动方向垂直。即,在图1中,气体入口7与出口8设置在聚合室下部的左右两末端。
但是,在按常规设置气体入口和出口时,存在如下的缺陷。首先,聚合室中气流形成方向与基材流方向垂直,因而相应地,由于反应性气体停留时间较短,与基材不能充分反应。其次,聚合室中的气流并不是作为整体统一形成,由于气体与基材只在某些区域反应,因而不能充分发生聚合。由于这些问题,聚合基材的表面特性不均匀,具有所需特性的有缺陷的产品增加。
同样地,如果是在连续聚合装置中,那么可以安装另外的后处理室,以便在聚合处理后进行后处理。这种情况下,气体入口的排气部分应设置在各自的室中。若气体入口和出口设置后,气体和仪器的控制变得更加复杂,从而导致了很大问题。因此,需要一个简便并易于控制气体的供应和排放的等离子聚合装置。
发明概述
因此,本发明的目的是提供一个等离子聚合装置,它能延长反应性气体停留在基材表面的时间并使反应性气体在聚合室中得到有效利用。
本发明的另一个目的就是提供一个等离子聚合装置,其具有较简单的组件使得气体的供应和排放的控制更平稳。
为实现该目的,本发明提供了一种等离子聚合装置用的供气和排气系统,所述的等离子聚合装置具有一个能够连续移动基材的聚合室,该系统具有用于向聚合室供应气体的气体入口和用于排出通过气体入口供应的反应性气体的气体出口,其中安装了气体入口和气体出口,以便使反应性气体基本平行于基材的移动方向流动。
聚合室包括垂直室,在该室中基材水平和垂直地移动。
附图的简要说明
图1是常规的等离子连续处理装置的剖面图。
图2a是本发明的用于等离子聚合装置的供气和排气系统的平面图。
图2b是图2a的供气和排气系统的前视图。
图3a是垂直室中的供气和排气系统的一个实施方案。
图3b是垂直室中的供气和排气系统的另一个实施方案。
图4a是垂直室中的供气和排气系统的又一个实施方案。
图4b是垂直室中的供气和排气系统的再一个实施方案。
图5a显示了包括另外的气体出口通道的供气和排气系统。
图5b显示了包括一个额外的用于使气体出口通道连为一体的连接单元的供气和排气系统。
发明详述
本发明的供气和排气系统的特征在于能够连续移动基材的等离子聚合装置具有一个聚合室,在聚合室中安装了气体入口和气体出口,以便使反应性气体基本平行于基材的移动方向流动。
本发明可应用于基材平行移动的情况,以及垂直室(其中的基材垂直移动的聚合室)的情况,将在后面描述。
在本发明的一个实施方案中,气体入口设置在靠近聚合室的基材入口处,气体出口设置在靠近聚合室的基材出口处。此外,在本发明的另一个实施方案中,气体入口设置在靠近聚合室基材出口处,而气体出口设置在靠近聚合室的基材入口处。
而且,本发明还提供了一种用于具有后处理室的等离子聚合装置的供气和排气系统,后处理室分别具有气体入口和气体出口,在系统中,气体出口设置在两个室之间。
在系统中,气体入口沿与基材在聚合室的入口部的流动相同的方向设置,后处理室沿与基材在聚合室的出口部的流动相反的方向设置。从两室的气体出口流出的气体流经一条排气管道和一个节流阀,并被吸向一个泵,以便整体进行控制。
图2a是本发明的一个实施方案的平面图。在左边,设置了一个退绕室9用于退绕呈卷状的基材以形成片状,聚合室1a从退绕室进料以进行等离子聚合处理。除聚合室外,还安装了后处理室1b,基材被连续后处理。在此,可以对基材进行二次等离子聚合处理或对基材进行提高质量的处理。通过后处理室的基材在右边的卷绕室10中被再次绕成卷。聚合室1a和后处理室1b分别具有气体入口11、12,和气体出口,气体出口为参考数字所示,制在室的壁上。对于聚合室而言,气体入口设置在其入口部,以便以与聚合室的基材的流动相同的方向供应和排出气体,气体出口设置在聚合室的出口部。另一方面,对于后处理室而言,气体入口12设置在室的出口部,以便以与基材的流动相反的方向供应气体,气体出口设置在后处理室的入口部。通过这种安排,气体供入聚合室和后处理室,且该安排能够整体控制两室的供应。从出口流出的气体流经节流阀14流向泵15。
图2b是图2a的供气和排气系统的前视图。从聚合室1a和后处理室1b的气体入口供应的气体与在电极4间以平行方向移动的基材反应,并经过排气口(图中未示出)被吸向排气管道13。
在连续等离子聚合时,排气系统控制气体不会在每个室之间被搅动,且每个室中的气体可以同时用一台泵加以控制。因此,设备简化、管理便利。
上述的装置是作为一个单一的实体构成的。但是,为更有效地进行等离子聚合,优选装置具有许多聚合室。特别地,如果等离子聚合装置包括一个具有基材在其中垂直流动的区域的聚合室,要想保证高质量的表面涂布处理,原料气的供应和流动方向以及排出是非常重要的。
在本发明的另一个实施方案中,提供了包括至少一个聚合室的供气和排气系统,在聚合室中基材被连续进料和涂布。而且,在等离子聚合装置中,至少安装了一个聚合室,其方向与基材的流动方向垂直,且该系统中设置了气体入口和气体出口,其设置方式使气体的流动方向与放置在聚合室中的基材的流动方向平行。
如果聚合室具有沿垂直于基材的流动方向流动的区域,为使原料气和基材的流动方向平行,必须具有特定的构成以构成用于等离子聚合装置的供气和排气系统。特别地,考虑到重力的影响,需要适当地设置气体入口和气体出口。
图3a图示了聚合室,其具有基材在垂直流动的区域。基材2从聚合室的下部流向上部,用于供应原料气即反应性气体和非反应性气体的气体入口21a设置在聚合室1c上部的一个端面上。用于排放原料气的气体出口部22a设置在聚合室下部的一个端面上。也就是说,从气体入口排出的原料气以与平行基材的流动方向相反的方向移动,并经气体出口排出。图3b示出了一种情形,即通过以相反的方向设置图3a的气体入口21a和气体出口,基材和气体以相同的方向流动。在这种情况下,在基材2的表面上流动的原料气的特性变得与图3a的不同,因此,可以进行按照特性的等离子聚合过程。
图4a和4b为显示一个实施方案的剖面图,其中气体入口和气体出口设置在垂直聚合室的两个面上。在图4a中,气体入口22c设置在垂直室上部的两个端面上,气体出口21c设置在垂直室下部的两个端面上,使得基材2和气体以相反的方向流动。在图4b中,气体入口21d设置在垂直室下部上,气体出口22d设置在垂直室上部上,使得基材2和气体以相同的方向流动。因此,通过分别设置一个气体入口和一个气体出口,使原料气流的量增加而超过原料气供应量和排气量,且更加均匀,从而更快地进行高质量的表面处理。
而且,在本发明中,可以另外包括与气体出口相连的气体出口通道23,如图5a所示,以及用于使至少一个气体出口通道连为一体的连接区域24,如图5b所示。通过在气体出口中设置气体出口通道,可以调节通道的形状,可以促进排出气的处理。特别地,如果系统包括许多聚合室,排出气可与连接区域作为整体被处理。图5a和5b说明了垂直室。但是,这种描述可以等同地应用于聚合器。
本发明的供气和排气系统可能实现均匀的、高质量的表面处理,并且通过调节与基材的流动平行的气流,可以容易地控制气体供应和排放量,即使是在具有许多聚合室的等离子聚合装置具有基材垂直流入聚合室的区域的情况下。
工业实用性
如上所述,按照本发明,设置了气体入口和气体出口,以使气流方向基本上与聚合室中基材的移动方向平行,在聚合室中基材的运动是以平行或垂直方向进行的,因此,由于基材与反应性气体长时间地接触,能够发生充分的反应,因此获得具有优良的聚合处理效果的基材。另外,本发明能够控制聚合室中的气体在靠近基材的地方形成,因此,可有效利用反应性气体,因此减少了使气流均匀的成本。而且,在分别具有一个聚合室和一个后处理室的等离子聚合装置中,本发明提供了一种更为简便的供气和排气系统,因此,可以平稳地控制气体供应和排放,从而气体在各个室之间被搅动。此外,由于可以同时控制每个室中的气体,因此可以减少安装空间。
Claims (11)
1.一种用于等离子聚合装置的供气和排气系统,在所述聚合装置中基材连续移动,该系统包括:
气体入口,用于向聚合室供应气体,和
气体出口,用于排出经气体入口供应的反应性气体,
其中气体入口和气体出口以这样的一种方式设置,即,使反应性气体的流动与基材的移动方向平行,以及
聚合室包括许多室,且至少一个室设置在垂直于聚合室中基材流动的方向上。
2.权利要求1的系统,其中基材在聚合室中水平移动。
3.权利要求2的系统,其中气体入口设置在靠近聚合室的基材入口处,气体出口设置在靠近聚合室的基材出口处。
4.权利要求2的系统,其中气体入口设置在靠近聚合室的基材出口处,气体出口设置在靠近聚合室的基材入口处。
5.权利要求2的系统,其中除聚合室外还另外设置了后处理室,且聚合室和后处理室各自具有气体入口和气体出口,其中气体出口设置在两个室之间。
6.权利要求5的系统,其中气体入口以与聚合室的入口部的基材流动方向相同的方向设置,气体出口以与后处理室的出口部的基材流动方向相反的方向设置。
7.权利要求5的系统,其只具有一台泵,用于统一地控制从聚合室和后处理室的气体出口流出的气体。
8.权利要求7的系统,其中气体入口设置在聚合室的一个上端面上或一个下端面上,所说的聚合室具有沿垂直于基材流动方向的方向流动的区域,气体出口设置在与气体入口相对的端面上。
9.权利要求7的系统,其中气体入口设置在聚合室的两个上端面上或两个下端面上,所说的聚合室具有沿垂直于基材流动方向的方向流动的区域,气体出口设置在与气体入口相对的两个端面上。
10.权利要求9的系统,其具有与气体出口相连的另外的气体出口通道。
11.权利要求10的系统,其具有一个连接单元,用于将气体出口通道连为一体。
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KR1020000011004A KR20010086971A (ko) | 2000-03-06 | 2000-03-06 | 플라즈마 중합처리장치의 급배기 시스템 |
KR2000/11004 | 2000-03-06 |
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CN1411516A CN1411516A (zh) | 2003-04-16 |
CN1193114C true CN1193114C (zh) | 2005-03-16 |
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US (1) | US6833120B2 (zh) |
EP (1) | EP1268879B1 (zh) |
JP (1) | JP2003526011A (zh) |
KR (1) | KR20010086971A (zh) |
CN (1) | CN1193114C (zh) |
AU (1) | AU2001237769A1 (zh) |
ES (1) | ES2377304T3 (zh) |
MX (1) | MXPA02008752A (zh) |
WO (1) | WO2001066823A1 (zh) |
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KR100320197B1 (ko) * | 1999-08-21 | 2002-01-10 | 구자홍 | 직류전원 플라즈마중합 연속처리장치 |
CN100408721C (zh) * | 2002-08-19 | 2008-08-06 | 乐金电子(天津)电器有限公司 | 热交换器表面处理装置 |
JP4553608B2 (ja) * | 2004-03-11 | 2010-09-29 | Jfeスチール株式会社 | 金属ストリップの連続式化学蒸着装置 |
DE102012213095A1 (de) * | 2012-07-25 | 2014-01-30 | Roth & Rau Ag | Gasseparation |
TWI502096B (zh) | 2013-06-17 | 2015-10-01 | Ind Tech Res Inst | 用於化學氣相沉積的反應裝置及反應製程 |
CA2959253C (en) | 2014-09-05 | 2018-04-24 | Hampton Products International Corporation | Handle set having latch bolt actuable by pushing handle |
MA54855A (fr) | 2019-02-01 | 2022-05-11 | Basf Se | Mélange d'acides gras et de phosphates d'alkyléther utilisé en tant que collecteur pour la flottation de minerai de phosphate |
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DE1571132A1 (de) * | 1962-11-07 | 1970-04-02 | Radiation Res Corp | Verfahren und Einrichtung zur Herstellung eines polymerisierten UEberzugs |
JPS63129630A (ja) | 1986-11-20 | 1988-06-02 | Fuji Electric Co Ltd | プラズマcvd薄膜形成法 |
US5302343A (en) * | 1987-02-25 | 1994-04-12 | Adir Jacob | Process for dry sterilization of medical devices and materials |
JPH0641214A (ja) | 1992-07-27 | 1994-02-15 | Bridgestone Corp | プラズマ開始重合法 |
DE19546187C2 (de) * | 1995-12-11 | 1999-04-15 | Fraunhofer Ges Forschung | Verfahren und Einrichtung zur plasmagestützten Oberflächenbehandlung |
JPH11128634A (ja) | 1997-11-04 | 1999-05-18 | Nippon Millipore Kk | 不織布フィルタおよびその製造方法並びに不織布フィルタカートリッジ |
JP3430897B2 (ja) | 1998-01-27 | 2003-07-28 | 松下電工株式会社 | プリプレグ及び積層板 |
KR100320198B1 (ko) * | 1999-08-21 | 2002-03-13 | 구자홍 | 메쉬 형태의 전극이 설치된 플라즈마중합처리장치 |
KR100320197B1 (ko) * | 1999-08-21 | 2002-01-10 | 구자홍 | 직류전원 플라즈마중합 연속처리장치 |
-
2000
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2001
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- 2001-03-02 CN CNB018061095A patent/CN1193114C/zh not_active Expired - Fee Related
- 2001-03-02 MX MXPA02008752A patent/MXPA02008752A/es active IP Right Grant
- 2001-03-02 US US10/220,778 patent/US6833120B2/en not_active Expired - Fee Related
- 2001-03-02 WO PCT/KR2001/000321 patent/WO2001066823A1/en active Application Filing
- 2001-03-02 JP JP2001565424A patent/JP2003526011A/ja active Pending
- 2001-03-02 AU AU2001237769A patent/AU2001237769A1/en not_active Abandoned
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JP2003526011A (ja) | 2003-09-02 |
MXPA02008752A (es) | 2003-02-24 |
WO2001066823A1 (en) | 2001-09-13 |
US20030143134A1 (en) | 2003-07-31 |
EP1268879A1 (en) | 2003-01-02 |
KR20010086971A (ko) | 2001-09-15 |
EP1268879B1 (en) | 2012-01-25 |
ES2377304T3 (es) | 2012-03-26 |
EP1268879A4 (en) | 2005-04-13 |
AU2001237769A1 (en) | 2001-09-17 |
US6833120B2 (en) | 2004-12-21 |
CN1411516A (zh) | 2003-04-16 |
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