CN119297074A

CN119297074A - Silicon carbide MOSFET high temperature ion implantation method and device

Info

Publication number: CN119297074A
Application number: CN202411785435.1A
Authority: CN
Inventors: 杨彦峰; 黄凤明
Original assignee: Shenzhen Semi One Technology Co ltd
Current assignee: Shenzhen Semi One Technology Co ltd
Priority date: 2024-12-06
Filing date: 2024-12-06
Publication date: 2025-01-10
Anticipated expiration: 2044-12-06
Also published as: CN119297074B

Abstract

The invention relates to the technical field of MOSFET preparation, and discloses a high-temperature ion implantation method and device for silicon carbide MOSFET. The invention pre-processes a substrate and obtains specifications and performance parameters, designs a high-temperature ion implantation scheme according to the parameters, prepares a nanostructure on the surface of the substrate to guide the ion implantation, heats the substrate to a working state, performs high-temperature ion implantation through the nanostructure, collects and analyzes implantation effect data in real time, optimizes the implantation effect by adjusting parameters, and completes the preparation of an intermediate state substrate. The method improves the accuracy and uniformity of ion implantation through nanostructure guidance and real-time feedback regulation, and solves the problem of insufficient accuracy of high-temperature ion implantation of silicon carbide in the prior art.

Description

Silicon carbide MOSFET high-temperature ion implantation method and device

Technical Field

The invention relates to the technical field of MOSFET preparation, in particular to a silicon carbide MOSFET high-temperature ion implantation method and device.

Background

Silicon carbide (SiC) is widely used in the field of power electronics, such as silicon carbide MOSFETs, for its excellent high temperature stability, high breakdown field strength and high electron saturation velocity. In order to improve the performance and reliability of the device, high temperature ion implantation is applied as an important doping method to the manufacturing process of silicon carbide MOSFETs.

The traditional ion implantation method has the problems of uneven ion diffusion, inaccurate depth control, damage to the surface of a substrate and the like in a high-temperature environment, so that the finally prepared device is limited in reliability and stability, the silicon carbide material is high in hardness and high in structural density, the uniformity and depth control of ion implantation in the high-temperature environment are difficult, the insufficient implantation precision is easily caused, and the performance and reliability of the MOSFET are affected.

Disclosure of Invention

The invention aims to provide a high-temperature ion implantation method and device for a silicon carbide MOSFET, and aims to solve the problem that in the prior art, the precision of high-temperature ion implantation for silicon carbide is insufficient.

The present invention is achieved in a first aspect by providing a method for high temperature ion implantation of a silicon carbide MOSFET, comprising:

preprocessing a substrate for preparing a silicon carbide MOSFET to obtain a substrate to be prepared;

Acquiring specification parameters and performance parameters of the substrate to be prepared, and analyzing a high-temperature ion implantation scheme of the substrate to be prepared according to the specification parameters and the performance parameters of the substrate to be prepared to obtain the high-temperature ion implantation scheme of the substrate to be prepared;

performing nano-structure preparation treatment on the substrate to be prepared according to the high-temperature ion implantation scheme to obtain a plurality of nano-structures which are arranged on the surface of the substrate to be prepared and used for guiding high-temperature ion implantation;

heating the substrate to be prepared to enable the substrate to be prepared to be in a working state, and carrying out high-temperature ion implantation on the substrate to be prepared in the working state through the nano structure according to the high-temperature ion implantation scheme;

And acquiring real-time data of the high-temperature ion implantation effect of the substrate to be prepared to obtain high-temperature ion implantation effect characteristics, analyzing the high-temperature ion implantation effect characteristics, and carrying out parameter adjustment on subsequent high-temperature ion implantation according to analysis results until the high-temperature ion implantation is carried out on the substrate to be prepared through each nanostructure to obtain an intermediate-state substrate of the silicon carbide MOSFET, wherein the intermediate-state substrate is used for processing a plurality of functional layers after high-temperature annealing treatment and surface coating preparation so as to prepare the silicon carbide MOSFET.

In a second aspect, the present invention provides a high-temperature ion implantation apparatus for a silicon carbide MOSFET, for implementing a high-temperature ion implantation method for a silicon carbide MOSFET according to any one of the first aspects, including:

The pretreatment module is used for pretreating the substrate for preparing the silicon carbide MOSFET to obtain a substrate to be prepared;

The scheme analysis module is used for acquiring specification parameters and performance parameters of the substrate to be prepared, and analyzing the high-temperature ion implantation scheme of the substrate to be prepared according to the specification parameters and the performance parameters of the substrate to be prepared to obtain the high-temperature ion implantation scheme of the substrate to be prepared;

The surface treatment module is used for carrying out nano-structure preparation treatment on the substrate to be prepared according to the high-temperature ion implantation scheme to obtain a plurality of nano-structures which are arranged on the surface of the substrate to be prepared and used for guiding high-temperature ion implantation;

The step execution module is used for carrying out heating treatment on the substrate to be prepared, so that the substrate to be prepared is in a working state, and carrying out high-temperature ion implantation on the substrate to be prepared in the working state through the nano structure according to the high-temperature ion implantation scheme;

The step adjustment module is used for acquiring real-time data of the high-temperature ion implantation effect of the substrate to be prepared to obtain high-temperature ion implantation effect characteristics, analyzing the high-temperature ion implantation effect characteristics, and carrying out parameter adjustment on subsequent high-temperature ion implantation according to analysis results until the high-temperature ion implantation is carried out on the substrate to be prepared through each nanostructure to obtain an intermediate-state substrate of the silicon carbide MOSFET, wherein the intermediate-state substrate is used for processing a plurality of functional layers after high-temperature annealing treatment and surface coating preparation so as to prepare the silicon carbide MOSFET.

The invention provides a silicon carbide MOSFET high-temperature ion implantation method, which has the following beneficial effects:

According to the method, the substrate is preprocessed, specification and performance parameters are obtained, a high-temperature ion implantation scheme is designed according to the parameters, a nano structure is prepared on the surface of the substrate to guide ion implantation, the substrate is heated to a working state, the high-temperature ion implantation is carried out through the nano structure, implantation effect data are collected in real time and analyzed, the implantation effect is optimized through adjusting the parameters until the preparation of the substrate in an intermediate state is completed, and the method improves the precision and uniformity of ion implantation through the nano structure guide and real-time feedback adjustment and solves the problem that the precision of high-temperature ion implantation on silicon carbide is insufficient in the prior art.

Drawings

Fig. 1 is a schematic step diagram of a high-temperature ion implantation method for a silicon carbide MOSFET according to an embodiment of the present invention;

Fig. 2 is a schematic structural diagram of a high-temperature ion implantation apparatus for a silicon carbide MOSFET according to an embodiment of the present invention.

Detailed Description

The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.

The implementation of the present invention will be described in detail below with reference to specific embodiments.

Referring to fig. 1 and 2, a preferred embodiment of the present invention is provided.

In a first aspect, the present invention provides a high temperature ion implantation method for a silicon carbide MOSFET, comprising:

S1, preprocessing a substrate for preparing a silicon carbide MOSFET to obtain a substrate to be prepared;

S2, acquiring specification parameters and performance parameters of the substrate to be prepared, and analyzing a high-temperature ion implantation scheme of the substrate to be prepared according to the specification parameters and the performance parameters of the substrate to be prepared to obtain the high-temperature ion implantation scheme of the substrate to be prepared;

S3, carrying out nano-structure preparation treatment on the substrate to be prepared according to the high-temperature ion implantation scheme to obtain a plurality of nano-structures which are arranged on the surface of the substrate to be prepared and used for guiding high-temperature ion implantation;

S4, carrying out heating treatment on the substrate to be prepared, so that the substrate to be prepared is in a working state, and carrying out high-temperature ion implantation on the substrate to be prepared in the working state through the nano structure according to the high-temperature ion implantation scheme;

And S5, acquiring real-time data of the high-temperature ion implantation effect of the substrate to be prepared to obtain high-temperature ion implantation effect characteristics, analyzing the high-temperature ion implantation effect characteristics, and carrying out parameter adjustment on subsequent high-temperature ion implantation according to analysis results until the high-temperature ion implantation is carried out on the substrate to be prepared through each nanostructure to obtain an intermediate state substrate of the silicon carbide MOSFET, wherein the intermediate state substrate is used for processing a plurality of functional layers after high-temperature annealing treatment and surface coating preparation so as to prepare the silicon carbide MOSFET.

Specifically, in step S1 of the embodiment provided by the present invention, the substrate of the silicon carbide MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a wafer made of silicon carbide (SiC) material, and as a basis of the device structure, silicon carbide is a wide bandgap semiconductor material having superior electrical and thermal characteristics and suitable for high-voltage, high-power and high-temperature environments, and the substrate is used for growing an active layer of the device, supporting subsequent manufacturing processes such as ion implantation, surface oxidation and deposition of a functional layer.

More specifically, before MOSFET fabrication is performed on a silicon carbide substrate, the silicon carbide substrate needs to be subjected to sufficient surface cleaning and leveling treatment, impurities are removed, surface stress is reduced, substrate quality is improved, these measures ultimately help to improve ion implantation uniformity and control accuracy, and guarantee is provided for high performance of the silicon carbide MOSFET.

Specifically, in step S2 of the embodiment provided by the present invention, physical dimensions and geometric parameters of the substrate to be prepared, including thickness, diameter and surface flatness, are measured, whether the manufacturing requirements of the MOSFET are met is confirmed, the size and flatness of the substrate are known, it is ensured that the substrate can meet the structural requirements required in the ion implantation process, and the implantation depth difference caused by uneven surfaces is avoided.

More specifically, the electrical properties (such as resistivity, breakdown voltage) and thermal properties (such as thermal conductivity) of the substrate are measured, and common detection techniques include four-probe testing, thermal conductivity testing, electron microscopy analysis, etc., and these performance parameters are used to evaluate the material properties of the substrate, and ensure that the substrate will not change in structure or performance under high temperature conditions, thereby meeting the requirements of the high temperature ion implantation process.

More specifically, the type, energy and dose of ion implantation are determined based on the thickness of the substrate and the target electrical characteristics, commonly used ion implantation materials include nitrogen, phosphorus or aluminum, etc., the implantation temperature is determined, typically between 800 ℃ and 1000 ℃, to balance the depth of ions and substrate stability, the implantation dose and angle are selected to control the uniformity of ion distribution and implantation depth, and by optimizing the implanted ion type, energy and implantation temperature, the desired depth and distribution of ions in the silicon carbide substrate is ensured, and the electrical performance of the subsequent MOSFET functional layer is improved.

More specifically, in order to ensure the quality of the whole implantation process, a real-time data acquisition and parameter adjustment scheme is formulated, including monitoring the temperature, the dose and the distribution depth of ion implantation, and the implantation process is monitored in real time, so that implantation parameters can be adjusted in time when deviations are found, the uniformity and the consistency of ion implantation are ensured, and the success rate of high-temperature ion implantation is improved.

More specifically, based on analysis results, the implantation dosage, the implantation depth, the implantation temperature and the surface protection strategy are formed into a final process scheme, and the formulated scheme can ensure that the substrate after ion implantation has good thermal stability and electrical performance, meets the design requirements of the MOSFET, and lays a solid foundation for subsequent device manufacturing.

It will be appreciated that by the above steps, the depth, distribution and dosage of ion implantation can be precisely controlled, thereby optimizing the electrical, thermal and physical stability of the substrate and providing the desired performance support for the final manufactured silicon carbide MOSFET. Successful implementation of these steps directly affects the switching speed, voltage withstand performance, and overall efficiency of the device.

Specifically, in step S3 of the embodiment provided by the present invention, appropriate nanostructure parameters (such as size, shape, and spacing) are designed according to an ion implantation scheme, and a computer simulation (finite element analysis) is used to determine an optimal nanostructure to guide an ion implantation path, so as to improve implantation uniformity and depth control precision, and through precise design and simulation, the nanostructure can effectively guide a distribution path of ions, ensure uniformity of a substrate surface and interior in an implantation process, and facilitate improvement of implantation quality.

More specifically, a nano pattern is generated on the surface of the substrate by using a photolithography or electron beam etching technology, firstly, a photosensitive material (photoresist) is coated, then a mask pattern of a nano structure is formed through exposure and development, and the photolithography or electron beam etching technology can precisely generate the expected size and shape of the nano structure, ensure the precision and repeatability of the structure and provide a high-quality surface guiding layer for ion implantation.

More specifically, a plasma etching (such as reactive ion etching, RIE) or wet etching technology is used to etch the surface of the substrate to a desired nanostructure under the protection of the mask pattern, the etching depth and shape are adjusted according to the design requirement, and the plasma etching can realize a nanoscale fine structure, so that the guiding nanostructure for ion implantation has a desired height, depth and profile, and the ion implantation is ensured to precisely cover the region to be prepared.

More specifically, the residue of the photolithographic mask is removed using an organic solvent or plasma rinse to ensure that the surface is free of residual material. And (3) performing secondary cleaning on the substrate to remove etching residues, wherein the surface of the cleaned substrate is free of impurities or photoresist residues, so that the purity and the injection effect of ion injection are further improved, and the influence of material residues on an ion diffusion path is avoided.

More specifically, a Scanning Electron Microscope (SEM) or an Atomic Force Microscope (AFM) is used to detect the morphology, spacing and depth of the nanostructures, so as to ensure that the design requirements are met, if a deviation is found, appropriate etching depth or structure adjustment is performed, the detection and optimization steps ensure that the dimensions and shapes of the nanostructures meet the precision requirements of the ion implantation scheme, and each nanostructure is ensured to be capable of effectively guiding the implantation position and depth of ions.

It can be understood that through the series of steps, the nano structures on the surface of the substrate to be prepared can effectively guide the distribution of high-temperature ions, so that the injection is uniform and stable, and the nano structures serve as a path controller of the ions, so that the ion injection precision is improved, the electrical performance and reliability of the device are improved, and a foundation is laid for the subsequent high-performance application of the silicon carbide MOSFET.

Specifically, in step S4 of the embodiment provided by the present invention, the substrate to be prepared is placed in a high temperature heating furnace or a heat treatment device to be heated, the temperature of the substrate is generally set between 800 ℃ and 1000 ℃ according to an ion implantation scheme, so as to ensure the stability of the substrate material in the ion implantation process, by controlling the heating rate and uniformity, the substrate is prevented from cracking or warping due to thermal shock, the substrate is in a high temperature working state by the heat treatment, the stress concentration in the material can be effectively reduced, the thermal diffusion capability of the substrate is improved, and support is provided for energy transfer in the ion implantation process. The high temperature also makes the diffusion of ions in the substrate more uniform, improving the implantation quality.

More specifically, a suitable ion source (e.g., nitrogen, phosphorous, aluminum, etc.) is selected and accelerated to a specified energy level, typically between tens of keV and hundreds of keV, to ensure that the ions reach a predetermined depth, the appropriate ion energy distributes the ions to the desired depth in the substrate while maintaining structural integrity of the material, and avoiding excessive damage to the substrate surface.

More specifically, in a high temperature state, ion implantation is guided by the prepared nanostructure, the nanostructure has the effect of concentrating an implantation path of an ion beam, so that the ions can be uniformly and directionally distributed on the surface and inside of the substrate, the nanostructure enables implantation to be more uniform by enhancing spatial distribution control of the ions, the deposition accuracy of the ions in the substrate is improved, and meanwhile, the nanostructure can reduce surface reflection and diffusion, improve the utilization efficiency of the ions and improve the final electrical performance of the device.

More specifically, the substrate is subjected to ion implantation under the condition of keeping high temperature, the dosage and the implantation time of the ion implantation are set according to the scheme, each ion is ensured to enter the substrate with correct energy, the whole process including ion beam intensity, implantation time and surface temperature is monitored by using ion implantation equipment, the diffusion rate of the ions in the high temperature state is higher, the ions are more uniformly distributed in the substrate, the accumulation of the ions after the implantation is reduced, the lattice damage in the ion implantation process can be reduced due to the high temperature, and the thermal stability and the conductivity of the device are enhanced.

More specifically, after ion implantation is completed, an annealing process is generally performed, and the substrate is maintained at a high temperature (typically, 1200 ℃ to 1600 ℃) to promote redistribution of implanted ions in the crystal lattice and repair of lattice defects caused by implantation, and thermal annealing can reduce lattice defects caused by implanted ions, recover the crystal structure of the material, and improve the electrical properties and mechanical strength of the substrate. Through this process, the bonding of ions to the substrate material is more stable, thereby improving the reliability of the device.

More specifically, after ion implantation and annealing are completed, the temperature of the substrate is gradually reduced, thermal stress or substrate damage caused by quenching is avoided, a slow cooling mode in an inert gas protection environment can be adopted, the internal stress of the substrate can be reduced by slow cooling, cracks or deformation on the surface and the inside of the substrate after heat treatment are avoided, and a high-quality substrate is provided for subsequent device manufacturing.

It can be understood that by the above steps, the ion implantation process performed on the substrate to be prepared in a high temperature environment can significantly improve the distribution uniformity and implantation accuracy of ions, ensure that the implanted ions reach a predetermined depth and concentration in the substrate, effectively guide the implantation path of ions by the action of the nanostructure, reduce reflection and energy loss, and simultaneously, repair the lattice defects of the substrate by high Wen Zhuru and annealing treatment, and improve the electrical performance and thermal stability of the substrate, which lays a solid foundation for high-voltage, high-power and high-temperature application of the final MOSFET device.

Specifically, in step S5 of the embodiment provided by the present invention, the real-time monitoring system in the ion implantation apparatus is used to collect key parameters such as ion energy, implantation depth, dose, temperature, ion current intensity, etc., the online monitoring system (such as optical, electron microscopic detection and temperature sensor) is used to obtain real-time data in the implantation process, the real-time collected data can directly reflect the effect of ion implantation, such as whether the ion distribution depth and dose in the substrate meet the preset requirements, and the high-precision collection system can timely find the deviation occurring in the ion implantation process, so as to avoid the influence of the accumulation of the deviation on the final substrate performance.

More specifically, real-time data is compared with expected parameters of ion implantation, uniformity of ion distribution, implantation depth and accuracy of concentration are analyzed, the accuracy of ion distribution, the design requirements of a high-temperature ion implantation scheme are met, common analysis methods comprise an ion distribution diagram, a depth profile diagram and the like, and through analysis of the ion distribution data, the problems of non-uniform distribution, offset or insufficient dosage and the like possibly occurring in the ion implantation process can be rapidly identified, and effectiveness and consistency of each nanostructure in guiding ion implantation are guaranteed.

More specifically, according to the real-time data analysis result, parameters of ion implantation, including ion energy, implantation dosage, implantation temperature, angle and the like, are adjusted, the adjusted parameters can be gradually applied in the implantation process, so that the ions are distributed according to the design and the required implantation depth is realized, the precision and stability of each implantation stage are ensured by dynamic adjustment, the process of high-temperature ion implantation is ensured to meet the design requirement, unnecessary loss of the optimized implantation parameters can be effectively reduced, and the utilization efficiency of the ions in a substrate is improved.

More specifically, under the support of dynamic adjustment, the ions are precisely guided through the nano-structures, so that the ions are ensured to be uniformly distributed in a preset area of the substrate, each nano-structure uniformly conducts the ions to the inside of the substrate, the guiding effect of the nano-structures is fully exerted, the depth and the concentration of the ion distribution are ensured to achieve the best effect through the adjusted ion implantation parameters, and the conductivity and the structural stability of the substrate are improved.

More specifically, after the requirements of uniformity and precision of ion implantation are met, stopping the implantation process to obtain a silicon carbide substrate in an intermediate state, wherein the substrate has partial structural characteristics of the MOSFET, still needs further heat treatment and surface coating processing, and has deep structural characteristics formed by high-temperature ion implantation, so that a solid foundation is laid for subsequent functional layer processing and high-temperature annealing treatment.

More specifically, the intermediate state substrate is subjected to high-temperature annealing treatment to repair lattice defects caused by ion implantation, and surface coating (such as silicon oxide or silicon nitride) is prepared to provide protection for further processing of the functional layer, the annealing treatment and the surface coating can stabilize the surface and internal structure of the substrate, micro defects caused by ion implantation are eliminated, and the substrate surface obtains good heat resistance and electrical breakdown resistance through optimized surface coating treatment, so that a foundation is laid for processing of the functional layer.

It can be appreciated that the whole process ensures accurate control of the high temperature ion implantation process through real-time monitoring and dynamic adjustment, so that the distribution of ions in the substrate meets the design requirement. The finally formed intermediate state substrate has stable electrical and physical characteristics and can bear high-temperature annealing and surface coating treatment. The processed substrate provides an excellent material foundation for processing the functional layer of the silicon carbide MOSFET, improves the overall stability and high-voltage performance of the device, and ensures that the final MOSFET device has excellent conductive, high-temperature and breakdown-resistant characteristics.

Preferably, the step of pre-treating the substrate for preparing the silicon carbide MOSFET to obtain the substrate to be prepared comprises:

s11, carrying out surface cleaning and polishing treatment on a substrate for preparing the silicon carbide MOSFET;

and S12, carrying out surface oxidation treatment or surface passivation treatment on the substrate subjected to the surface cleaning and polishing treatment to obtain the substrate to be prepared.

Specifically, an organic solvent (such as ethanol and acetone) is used for cleaning the surface of the substrate to remove greasy dirt and organic matters, deionized water is used for washing to ensure that the surface is free of residues, and an ultrasonic cleaning device can be further used for thoroughly removing possible particulate pollution, so that the organic matters, dust and other impurities on the surface of the substrate are removed by cleaning, a clean surface is provided for subsequent polishing and oxidation treatment, interface defects caused by the impurities are avoided, and therefore the electrical performance and the device reliability of the MOSFET are improved.

More specifically, a mechanical polishing or Chemical Mechanical Polishing (CMP) method is used to polish the surface of the substrate, where the mechanical polishing generally uses an abrasive solution and a polishing pad, and the polishing force and time are controlled, and the CMP further improves the surface flatness by combining chemical reaction and mechanical action, so that the surface smoothness and uniformity of the substrate reach micro-nano level, the surface roughness is reduced, a good foundation is laid for ion implantation and subsequent processing of functional layers, and the substrate with a flat surface can reduce interface scattering, and improve the conductivity and pressure resistance of the device.

More specifically, the polished substrate is placed in an oxidation furnace to be subjected to high-temperature oxidation treatment, usually under dry or wet oxygen atmosphere, the temperature range is 1000 ℃ to 1200 ℃, the oxidation time is generally different from tens of minutes to hours according to the thickness of the required oxide layer, a layer of silicon dioxide (SiO ₂) film is formed on the substrate by surface oxidation, the effect of an insulating layer is achieved, the uniformity and the precision of subsequent ion implantation are facilitated, and meanwhile, the high-voltage resistance of the MOSFET device is improved. The oxide layer can also reduce surface defects and stress concentration, and improve the long-term stability of the device.

More specifically, if a passivation process is selected, exposing the substrate to a passivation solution, typically using a nitride or fluoride solution to form a stable passivation layer, a plasma passivation process may also be employed. The passivation layer is formed at a lower temperature and is generally thinner, a protective film can be formed on the surface of the passivation layer, so that external pollutants or moisture can be prevented from corroding the surface of the substrate, and the durability of the substrate is improved. The passivation layer can also inhibit surface carrier recombination and reduce surface state density, thereby improving the electrical performance of the MOSFET.

More specifically, the substrate subjected to cleaning, polishing and oxidation or passivation treatment becomes a substrate to be prepared, has good surface characteristics and stable surface suitable for ion implantation, and has low surface defect density and high surface flatness through pretreatment, so that the interface characteristics of the substrate are effectively improved. The pretreated substrate is suitable for subsequent high-temperature ion implantation, improves the uniformity of ion distribution and the accuracy of implantation, and provides support for the overall performance of the silicon carbide MOSFET device.

It can be understood that after surface cleaning, polishing and oxidation or passivation treatment, the surface of the substrate is clean and smooth, the defect density is low, the existence of the insulating or passivation layer further optimizes the chemical and physical properties of the surface, and provides an ideal foundation for the ion implantation process.

Preferably, the step of obtaining the specification parameter and the performance parameter of the substrate to be prepared, and analyzing the high-temperature ion implantation scheme of the substrate to be prepared according to the specification parameter and the performance parameter of the substrate to be prepared, to obtain the high-temperature ion implantation scheme of the substrate to be prepared includes:

S21, data acquisition of specification parameters and performance parameters is carried out on the substrate to be prepared so as to obtain the specification parameters and the performance parameters of the substrate to be prepared;

S22, carrying out digital simulation processing on the substrate to be prepared according to the specification parameters of the substrate to be prepared to obtain a substrate digital model for carrying out digital simulation feedback on the substrate to be prepared;

s23, performing effect simulation treatment on the high-temperature ion implantation according to the performance parameters of the substrate to be prepared to obtain implantation effect simulation characteristics;

S24, acquiring target preparation morphological parameters of the silicon carbide MOSFET, and performing morphological simulation on the target preparation morphological parameters based on the substrate digital model to obtain a substrate target preparation model;

S25, performing reverse simulation analysis of a preparation scheme on the substrate target preparation model according to the injection effect simulation characteristics to obtain a high-temperature ion injection scheme corresponding to the substrate target preparation model.

Specifically, the precise measurement equipment is utilized to measure specification parameters such as thickness, surface flatness, lattice structure, doping concentration, defect density and the like of the substrate to be prepared in detail, and meanwhile, the thermal stability, electrical properties (such as carrier mobility), mechanical strength and the like of the substrate are collected, and the detailed parameter collection provides real data support for subsequent scheme design, so that the subsequent high-temperature ion implantation process is ensured to conform to physical and chemical characteristics of the substrate, and poor implantation effect or performance reduction caused by substrate parameter deviation is avoided.

More specifically, according to the acquired specification parameters, the substrate is subjected to digital modeling by using a computer simulation technology, and a digital model of the substrate is generated. The model contains the information of the geometric structure, lattice arrangement, surface defects and the like of the substrate, the actual state of the substrate can be truly reflected, the digital substrate model provides accurate references for effect simulation and target morphological analysis of subsequent ion implantation, and the digital simulation process can be more fit with the actual situation, so that the effectiveness of scheme design is improved.

More specifically, based on performance parameters, effect simulation is performed on the high-temperature ion implantation process, influences of parameters such as ion energy, implantation depth, dose and temperature on a substrate are evaluated, a molecular dynamics or Monte Carlo method can be adopted for simulation, the distribution state of implanted ions in the substrate is predicted, ion distribution and substrate response in a high-temperature environment can be advanced through ion implantation effect simulation, and conditions such as possible defect generation, stress change and the like in the implantation process are analyzed, so that basis is provided for optimizing implantation parameters.

More specifically, according to the design requirement of the silicon carbide MOSFET, target preparation morphological parameters including key indexes such as channel length, gate oxide thickness, junction depth, doping distribution, surface morphology and the like are set. The parameters provide specific technical requirements for the subsequent implantation scheme, and the definite target morphological parameters provide clear quality control standard for high-temperature ion implantation, so that the parameters selected in the implantation scheme can meet the requirements of the electrical performance and reliability of the MOSFET device.

More specifically, morphological simulation analysis is performed based on the substrate digital model and the target preparation morphological parameters. The method comprises the steps of simulating the substrate morphology after high-temperature ion implantation by a digital means, verifying whether an implantation scheme can meet the structural requirement of a final silicon carbide MOSFET, predicting the standard condition of the final substrate morphology before actual implantation by morphological simulation, identifying potential preparation problems and technical risks in advance, optimizing the preparation scheme, and ensuring high-quality output in actual production.

More specifically, based on the effect characteristics of high-temperature ion implantation, a reverse simulation is performed on the target preparation model, and implantation parameters and conditions required on the premise of reaching the target morphology are analyzed. By adjusting parameters such as injection depth, dosage, ion energy and the like, the optimal injection scheme is reversely deduced, and the preparation target is accurately matched with the actual injection condition by reversely simulating the optimal injection scheme, so that the injection precision and uniformity are improved, the errors in preparation are reduced, and the compatibility and consistency of the substrate in subsequent device processing are ensured.

It can be understood that the whole steps are based on detailed collection and analysis of specification and performance parameters, a high-efficiency high-temperature ion implantation scheme is established through digital simulation and reverse deduction, the finally obtained implantation scheme can accurately control the distribution of ions in a substrate, defect generation in the implantation process is reduced, the substrate is ensured to meet the design requirement of a silicon carbide MOSFET, and the conductive performance, the thermal stability and the breakdown resistance of the silicon carbide MOSFET can be remarkably improved through the scheme, so that the device can have excellent stability and reliability under extreme conditions.

Preferably, the step of performing reverse simulation analysis of the preparation scheme of the substrate target preparation model according to the injection effect simulation feature to obtain a high-temperature ion injection scheme corresponding to the substrate target preparation model includes:

S251, setting a plurality of injection positions based on the substrate digital model;

S252, performing simulation analysis on the high-temperature ion implantation forms according to each implantation position to obtain a high-temperature ion implantation form set of each implantation position, wherein the high-temperature ion implantation form set comprises a plurality of high-temperature ion implantation forms, and the high-temperature ion implantation forms comprise ion beam energy, ion dose, implantation direction angle, implantation depth and implantation rate;

S253, performing effect simulation processing on the high-temperature ion implantation form set according to the implantation effect simulation characteristics to obtain form effect characteristics of each high-temperature ion implantation form;

s254, carrying out combination treatment on each high-temperature ion implantation form of the high-temperature ion implantation form set to obtain implantation execution steps consisting of a plurality of high-temperature ion implantation forms, and carrying out corresponding combination treatment according to each form effect characteristic to obtain the integral effect characteristic corresponding to each implantation execution step;

s255, taking all the integral effect characteristics as theoretical effect sets of the injection position together, and carrying out analysis processing on constituent components of the substrate target preparation model according to all the theoretical effect sets to obtain a plurality of component schemes corresponding to the substrate target preparation model, wherein the component schemes comprise the integral effect characteristics selected from all the theoretical effect sets;

And S256, carrying out feasibility evaluation processing on each component scheme to obtain feasibility parameters of each component scheme, and taking the component scheme with the optimal feasibility parameters as a high-temperature ion implantation scheme.

Specifically, based on a digital model of the substrate, a plurality of key implantation positions are divided, wherein the positions generally comprise a channel region, a source region, a drain region and the like, and the accurate division of the implantation positions is beneficial to carefully controlling each region of the device in the ion implantation process according to the specific design requirements of the silicon carbide MOSFET to be manufactured, so that the key regions of the device can realize expected physical and electrical characteristics.

More specifically, a different set of ion implantation forms is set for each implantation position, each implantation form comprises specific ion beam energy, ion dosage, implantation direction angle, implantation depth and implantation rate, the influence of each implantation form on the substrate is simulated, and by performing independent simulation analysis on the implantation form of each position, proper implantation parameters can be found for different positions so as to better control ion distribution and doping concentration, thereby improving uniformity and consistency of the device.

More specifically, based on the injection effect simulation characteristics, effect simulation is performed on each injection form, the influence of different parameter combinations on characteristics such as material structure, doping concentration, defect distribution and the like is analyzed, the effect characteristics of each injection form are obtained, the effect characteristic simulation can predict the physical characteristics and the electrical characteristic changes of the substrate after ion injection, data support is provided for subsequent combinations, and the final injection effect is ensured to meet the design requirement of the silicon carbide MOSFET.

More specifically, the set of injection forms for each injection site are combined to result in different injection execution steps. The steps are matched with each other according to the effect characteristics, so that the injection forms at different positions are ensured to cooperate with each other to realize the optimal overall effect, the optimal effect can be ensured to be obtained at each injection position by combining different injection forms, the performance loss caused by parameter mismatch is avoided, and the final device has good conductivity and thermal stability.

More specifically, the overall effect characteristics generated in the injection execution step obtained after combination are used as theoretical effect sets of all injection positions, and component analysis is carried out on the theoretical effect sets, so that the influence of different injection parameters on the overall substrate characteristics can be revealed through the theoretical effect set analysis, theoretical support is provided for the subsequent selection of an optimal scheme, and the accuracy and the adaptability of the scheme are improved.

More specifically, according to the theoretical effect set of each injection position, a plurality of component schemes are generated, each scheme comprises the overall effect characteristics selected by each position, feasibility evaluation is carried out on each component scheme, the influence of each component scheme on the physical and electrical properties of the substrate is analyzed, feasibility parameters of each scheme are obtained, the feasibility of each component scheme is evaluated, the optimal parameter combination meeting the preparation target can be found, the injection scheme is guaranteed to have technical feasibility, and the expected effect can be achieved in practical application.

More specifically, a component scheme with the best feasibility parameter is selected as a final high-temperature ion implantation scheme, the best implantation form and execution step of each implantation position are determined, and the determination of the final scheme means that the optimal configuration is achieved in the aspects of ion dosage, implantation depth, implantation angle and the like, so that the performance and consistency of the silicon carbide MOSFET are improved, and the high stability and reliability of the device in practical application are ensured.

It can be understood that by setting the implantation position, simulating different implantation modes, combining implantation steps, analyzing a theoretical effect set and evaluating the feasibility of a component scheme, the finally obtained high-temperature ion implantation scheme can accurately control the doping concentration and ion distribution of the substrate, so that each region can meet the design requirement. In the device preparation process, the scheme effectively improves the electrical property, heat dissipation capacity and high temperature resistance of the silicon carbide MOSFET, so that the silicon carbide MOSFET has excellent performance and stability, and therefore, the strict requirements of high-performance electronic devices on material processes are met.

Preferably, the step of performing nanostructure preparation treatment on the substrate to be prepared according to the high-temperature ion implantation scheme to obtain a plurality of nanostructures disposed on the surface of the substrate to be prepared for guiding high-temperature ion implantation includes:

S31, analyzing the high-temperature ion implantation scheme to obtain each implantation position for carrying out high-temperature ion implantation on the substrate to be prepared in the high-temperature ion implantation scheme and an implantation execution step corresponding to each implantation position;

s32, carrying out substrate influence analysis of an injection process on the substrate to be prepared according to the injection execution step to obtain injection influence characteristics of the substrate to be prepared corresponding to each injection execution step;

And S33, performing guide countermeasure analysis on the injection influence characteristic to obtain a nano structure for performing high-temperature ion injection guide on the injection execution step so as to offset the injection influence characteristic.

Specifically, the predetermined high-temperature ion implantation scheme is analyzed in detail, each implantation position and corresponding implantation execution step on the substrate to be prepared are defined, the steps include specific parameters of ion implantation, including implantation energy, dose, angle, depth and speed, implantation conditions at different positions can be comprehensively understood through scheme analysis, a foundation is laid for subsequent substrate influence analysis and nanostructure design, and effective nano guiding structures are formed on the substrate.

More specifically, according to the injection execution step obtained by analysis, physical changes of the substrate in the injection process are analyzed, including possible influences of structural deformation, stress concentration, doping distribution, defect generation and the like of an injection region, potential influences of high-temperature ion injection on the substrate can be predicted by substrate influence analysis, diffusion behaviors and thermal effects of ions in the substrate are revealed, references are provided for determining functional requirements of the nanostructure, and pertinence of nanostructure design is ensured.

More specifically, according to the substrate impact analysis result, guiding countermeasures are formulated to guide high-temperature ion implantation through a specific nanostructure, the guiding countermeasures aim to counteract stress, thermal effect or other adverse effects generated in the implantation process, the specific countermeasures may include designing surface textures, arranging microporous structures, nano grooves and the like to change local electric fields or ion channels, optimizing the implantation effect, and through guiding countermeasure analysis, the design requirements of the nanostructure can be formulated in a targeted manner, so that the nanostructure has good guiding performance, uniform distribution and effective diffusion of ions on the substrate are ensured, and defects and damages possibly generated in the implantation process are reduced.

More specifically, according to the requirements of guiding countermeasures, the required nanostructure is prepared on the surface of the substrate to be prepared, and the specific method can be to use electron beam etching, laser etching, chemical etching or other nano processing technology to ensure that the nanostructure is matched with the injection position and step, the nanostructure arranged on the surface of the substrate can effectively guide high-temperature ion injection, optimize ion channels, reduce local stress concentration and thermal damage caused by injection, and improve the injection uniformity and the overall performance of the substrate.

More specifically, the actual high-temperature ion implantation is performed under the guidance of the nanostructure, the deviation in the implantation process can be corrected in real time by dynamically monitoring and adjusting implantation parameters, meanwhile, the effect of the nanostructure in the guidance of the ion implantation is evaluated, the nanostructure is finely adjusted to improve the guiding performance if necessary, the high-temperature ion implantation process is more controllable under the assistance of the nanostructure, the implantation depth, diffusion path and doping concentration of the ions can reach the expected standard, and the structural defects and substrate damage are reduced.

More specifically, after ion implantation is completed, performance evaluation is performed on the substrate and the nano structure on the surface of the substrate, stability, guiding effect and influence on ion implantation uniformity of the nano structure are analyzed, meanwhile, whether the implanted substrate meets design requirements of a target preparation model or not is checked, the actual effect of the nano structure in guiding high-temperature ion implantation can be verified through subsequent evaluation, and the final implantation scheme can reach an expected target. According to the evaluation result, the design of the nanostructure can be further optimized, and a reference is provided for a subsequent preparation scheme.

It can be appreciated that by analyzing the high temperature ion implantation scheme, analyzing the substrate influence, guiding the countermeasure analysis, and preparing the nanostructure, an effective nano guiding structure can be formed on the surface of the substrate to be prepared. The nano structures not only can optimize the uniformity of ion implantation, but also can effectively reduce the influence of stress and thermal effect on the substrate, and improve the structural stability and electrical property of the substrate, so that the nano structures more meet the preparation requirements of high-performance devices such as silicon carbide MOSFET and the like.

Preferably, the step of performing heat treatment on the substrate to be prepared so that the substrate to be prepared is in a working state, and performing high-temperature ion implantation on the substrate to be prepared in the working state through the nanostructure according to the high-temperature ion implantation scheme includes:

S41, heating the substrate to be prepared to enable the substrate to be prepared to be in a working state;

S42, analyzing the high-temperature ion implantation scheme to obtain each implantation position for carrying out high-temperature ion implantation on the substrate to be prepared in the high-temperature ion implantation scheme and an implantation execution step corresponding to each implantation position;

S43, analyzing the execution sequence of each injection execution step to obtain the execution sequence mark of each injection execution step;

And S44, according to the execution sequence marks of the injection execution steps, sequentially executing the execution processing of the injection execution steps on the corresponding injection positions on the substrate to be prepared in the working state.

Specifically, the substrate to be prepared is heated to ensure that the substrate reaches a preset working temperature to enable the substrate to be in a proper working state, and the temperature is generally set to be in a high temperature range which can be borne by the substrate material so as to be beneficial to the effective implementation of ion implantation, the activity of the substrate material is improved by heating treatment, the diffusion of ions in the substrate and the uniform distribution of doping concentration are facilitated, meanwhile, the defect generation in the implantation process can be reduced by the high temperature, and the stability of the substrate after implantation is enhanced.

More specifically, the high-temperature ion implantation scheme is analyzed in detail, each implantation position and the corresponding implantation parameters including energy, dosage, angle and the like are defined, implantation steps at different positions are determined so as to finish high-temperature ion implantation in steps, accurate parameter basis is provided for the implantation process by scheme analysis, the subsequent implantation operation is more targeted, the accuracy of the implantation positions is improved, and the implantation effect of each region is ensured.

More specifically, each of the analyzed injection steps is analyzed to determine an optimal execution sequence of the injections. Through the execution sequence marking, the implantation steps are numbered, so that the implantation path and time of ions are reasonably arranged, the reasonable execution sequence is beneficial to optimizing the efficiency of the implantation process, the uneven implantation caused by improper sequence or the ion concentration distribution at the adjacent position is prevented from being influenced, the thermal interference can be reduced, and the overall uniformity of implantation is improved.

More specifically, the heated substrate is sequentially subjected to ion implantation according to the execution sequence, the nanostructure guides the ion implantation by controlling the ion path, so that deviation and local defect generation in the implantation process are reduced, the guiding effect of the nanostructure optimizes the ion distribution path, the implantation uniformity is improved, the implanted ions are diffused in the substrate more uniformly, the performance of the substrate is improved, and the risk of stress concentration is reduced.

More specifically, ion implantation steps of each implantation position are gradually completed according to a marking sequence, ion concentration and implantation depth are monitored in real time in the implantation process, execution accuracy of each step is ensured, execution of sub-steps ensures that each position is sequentially carried out, ions reach expected concentration and depth at each position, interference among implantation positions is prevented, and overall implantation consistency is improved.

It can be understood that the above steps make the ion concentration distribution at each implantation position uniform by heating the substrate to a working state and carrying out ordered high-temperature ion implantation in combination with nanostructure-based guidance, thereby optimizing the implantation effect. The nano structure and the orderly execution step further improve the injection accuracy, reduce the structural defects of the substrate and the occurrence of stress concentration, and finally improve the physical and electrical properties of the substrate, so that the substrate meets the expected preparation requirements.

Preferably, the step of acquiring real-time data of the high-temperature ion implantation effect of the substrate to be prepared to obtain high-temperature ion implantation effect characteristics, analyzing the high-temperature ion implantation effect characteristics, and performing parameter adjustment on subsequent high-temperature ion implantation according to an analysis result until the high-temperature ion implantation is performed on the substrate to be prepared through each nanostructure, and obtaining the intermediate-state substrate of the silicon carbide MOSFET includes:

S51, when the injection execution step is executed on the injection position of the substrate to be prepared, equipment working information of high-temperature ion injection equipment for executing high-temperature ion injection on the substrate to be prepared is obtained to be used as a first effect characteristic of the injection execution step;

S52, carrying out multidimensional data acquisition on the substrate to be prepared for receiving high-temperature ion implantation through a preset sensor group, obtaining all monitoring parameters of the substrate to be prepared in the process of receiving high-temperature ion implantation, and taking all the monitoring parameters as second effect characteristics of the implantation execution step, wherein the sensor group comprises an infrared temperature sensor, a charge sensor and a photoelectric energy spectrum sensor;

S53, combining the first effect characteristic and the second effect characteristic to obtain a high-temperature ion implantation effect characteristic of the implantation execution step;

s54, performing effect analysis processing on the high-temperature ion implantation effect characteristics according to a preset standard to obtain effect deviation characteristics of the implantation execution step;

S55, carrying out parameter adjustment on the follow-up injection execution step based on the effect deviation characteristic, and carrying out high-temperature ion injection on the substrate to be prepared according to the injection execution step after parameter adjustment;

And S56, repeatedly executing the steps until the high-temperature ion implantation corresponding to each implantation execution step is carried out on the substrate to be prepared through each nanostructure, so as to obtain the intermediate state substrate of the silicon carbide MOSFET.

Specifically, when the high-temperature ion implantation step is performed, working information of the ion implantation device, such as implantation voltage, current, power, ion dose, ion beam energy and the like, is acquired, and the data can be acquired in real time through a monitoring system built in the device, so that as a first effect characteristic of the implantation step, the real-time acquisition of the working information of the device is helpful to ensure that device parameters in the implantation process are kept within a preset stable range, and fluctuation of any device parameters can influence the implantation effect, so that the implantation stability can be effectively ensured through the monitoring of the device information.

More specifically, the substrate to be prepared for receiving the high-temperature ion implantation is monitored in real time through a preset sensor group, the sensor group comprises an infrared temperature sensor, a charge sensor, a photoelectric energy spectrum sensor and the like, the sensor group is used for collecting multidimensional data such as temperature, charge distribution, energy absorption and the like of the substrate in the implantation process, the multidimensional data are used as second effect characteristics to reflect the real-time physical state of the substrate when receiving the ion implantation, the data collected by the multidimensional sensor can comprehensively reflect the reaction of the substrate in the ion implantation process, the reaction comprises temperature rise, charge accumulation and energy absorption, and the dynamic change of the substrate in different implantation stages can be captured through the real-time monitoring of the data, so that the substrate is ensured not to be adversely affected by excessive thermal effect, charge accumulation and the like.

More specifically, the working information (first effect characteristic) of the ion implantation device is combined with the multidimensional monitoring data (second effect characteristic) of the substrate to obtain complete high-temperature ion implantation effect characteristics, and the combined data can provide comprehensive implantation state analysis including linkage conditions between the device and the substrate, so that the high-temperature ion implantation effect can be analyzed more accurately by combining real-time data of the device and the substrate, and fine differences in the implantation process are revealed, for example, by analyzing the corresponding relation between the power change of the device and the temperature of the substrate, the implantation parameters can be adjusted better.

More specifically, according to a preset effect standard, the injection effect characteristics are analyzed, the actually collected data are compared with a preset target value, so that effect deviation characteristics in the injection process are obtained, the deviation possibly comprises overhigh temperature, deviation of injection depth or uneven ion distribution, and the like, and the deviation characteristics in the injection process can be rapidly identified through the effect analysis, so that a correction basis is provided for the subsequent injection step. The deviation analysis enables the injection process to be more controllable, and the occurrence of the condition of being out of the standard is reduced.

More specifically, parameters of the subsequent implantation step are adjusted in real time according to the deviation characteristics. The parameters that are adjusted may include ion implantation energy, implantation dose, implantation angle, implantation duration, etc. The adjusted parameters are used for the next injection execution step, the expected effect is ensured to be more attached, the deviation in the injection process can be gradually corrected through dynamic adjustment of the parameters, the effect of each injection is ensured to be continuously optimized, the adjustment process is fed back to a linkage system between equipment and a substrate, and the equipment parameters are ensured to be matched with the state of the substrate.

More specifically, the steps are repeated, high-temperature ion implantation is carried out on each implantation position, implantation parameters are adjusted gradually until the ion implantation of all positions achieves an ideal effect, in the process, the implantation path and distribution of ions can be further optimized through the guidance of the nano structure, and the silicon carbide MOSFET intermediate-state substrate with uniform ion distribution and accurate structure is finally formed through iterative execution and parameter optimization. This method ensures the accuracy of each step in the implantation process, reducing the probability of defect generation.

It can be understood that the method combines equipment information and multidimensional data of substrate response in the high-temperature ion implantation process, continuously optimizes the implantation effect through real-time analysis and adjustment, and finally realizes the high-precision and high-quality silicon carbide MOSFET intermediate state substrate.

Preferably, the step of performing effect analysis processing on the high-temperature ion implantation effect feature according to a preset standard to obtain an effect deviation feature of the implantation execution step includes:

s541, taking the integral effect characteristics corresponding to each injection execution step as a preset standard;

S542, carrying out feedback analysis processing on the substrate condition of the substrate to be prepared according to the high-temperature ion implantation effect characteristics to obtain substrate condition distribution characteristics of the substrate to be prepared corresponding to the high-temperature ion implantation effect characteristics;

S543, comparing the distribution characteristics of the substrate condition according to the preset standard to obtain the effect deviation characteristics of the injection execution step.

Specifically, before the implantation operation, preset standards are defined, the standards cover key parameters such as implantation energy, ion dose, temperature, charge distribution, implantation depth and the like based on the overall effect characteristics of each implantation execution step, the standards serve as reference indexes of each subsequent implantation operation, each step is ensured to meet expected requirements, and a clear reference is provided for subsequent effect analysis by setting the preset standards, so that the effect of each implantation execution step can be directly compared with an ideal state. This helps to quickly find the deviation and adjust in time.

The method comprises the steps of collecting high-temperature ion implantation effect characteristics, analyzing the condition of a substrate to be prepared in real time, wherein the specific operation comprises the steps of evaluating the temperature change of the substrate, detecting whether the temperature change is in a reasonable working temperature range, analyzing the charge distribution of the substrate, judging the diffusion uniformity of ions in the substrate, evaluating the energy absorption through a photoelectric energy spectrum sensor, ensuring that the ion implantation depth and the energy reach preset requirements, and timely capturing abnormal conditions of the substrate in the implantation process, such as overheating, local charge accumulation or energy shortage, by the feedback analysis of the substrate condition. The analysis provides real-time feedback for the actual state of the substrate, ensuring that subsequent adjustments can be optimized for the problem.

More specifically, the condition distribution characteristics of the substrate are obtained by processing the feedback data. These features include temperature distribution in different areas of the substrate, charge and energy absorption at each implantation point, uniformity of implantation depth, and ion concentration distribution.

It can be seen that the substrate condition distribution feature provides fine spatial distribution information for the state of each injection region, can reflect whether the injection effect is uniform in each region, and provides accurate data information for subsequent processing.

More specifically, the actual condition distribution characteristics of the substrate are compared with a preset standard, the difference between each execution step and the standard is found, and whether each parameter deviates from the preset value is analyzed. The comparison includes whether the temperature of each region exceeds or falls below a preset standard, whether the charge distribution and the energy absorption are uniform and meet the standard requirements, and whether the ion implantation depth and the ion implantation distribution meet a preset concentration range.

By such comparative analysis, it is possible to quickly find out problematic areas such as excessive temperature or non-uniformity of ion implantation in some areas during implantation. This method provides a clear direction of guidance for subsequent parameter adjustments.

More specifically, by comparison analysis, the effect deviation characteristic of the injection execution step is obtained. The deviation characteristic refers to the deviation condition of each parameter relative to a preset standard, and comprises the following steps of temperature deviation, implantation depth deviation, charge distribution deviation, and effect deviation characteristic, wherein the temperature deviation is that the temperature of a certain area of a substrate is possibly too high or too low, the implantation depth deviation is that the ion implantation depth of certain positions is insufficient or too deep, the charge distribution deviation is that the surface charge of the substrate is uneven after implantation and can cause performance degradation, and the effect deviation characteristic provides detailed deviation information, so that the problem can be clearly solved, accurate correction and parameter adjustment are carried out in the follow-up operation, and the effect of the whole implantation process is ensured to meet the design requirement.

It can be appreciated that the deviation in the high temperature ion implantation process can be effectively found by setting a preset standard, feeding back the substrate condition in real time, performing condition distribution feature analysis, and comparing the features with the preset standard. By identifying and analyzing the deviation characteristics, adjustment basis can be provided for the subsequent ion implantation step, deviation is gradually reduced, and finally the silicon carbide MOSFET intermediate state substrate meeting the requirements is obtained. The analysis processing method not only improves the precision and uniformity of the injection process, but also improves the performance and reliability of the whole substrate.

Referring to fig. 2, in a second aspect, the present invention provides a silicon carbide MOSFET high temperature ion implantation apparatus for implementing a silicon carbide MOSFET high temperature ion implantation method according to any one of the first aspect, including:

In this embodiment, for specific implementation of each module in the above embodiment of the apparatus, please refer to the description in the above embodiment of the method, and no further description is given here.

The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.

Claims

1. A high temperature ion implantation method for silicon carbide MOSFET, comprising:

Pre-treating a substrate for preparing a silicon carbide MOSFET to obtain a substrate to be prepared;

Acquiring specification parameters and performance parameters of the substrate to be prepared, and analyzing the high-temperature ion implantation scheme of the substrate to be prepared according to the specification parameters and performance parameters of the substrate to be prepared to obtain the high-temperature ion implantation scheme of the substrate to be prepared;

Performing a nanostructure preparation process on the substrate to be prepared according to the high-temperature ion implantation scheme to obtain a plurality of nanostructures disposed on the surface of the substrate to be prepared for guiding the high-temperature ion implantation;

Performing a heating treatment on the substrate to be prepared so that the substrate to be prepared is in a working state, and performing high-temperature ion implantation on the substrate to be prepared in the working state through the nanostructure according to the high-temperature ion implantation scheme;

Real-time data collection is performed on the high-temperature ion implantation effect of the substrate to be prepared to obtain high-temperature ion implantation effect characteristics, the high-temperature ion implantation effect characteristics are analyzed, and parameters of subsequent high-temperature ion implantations are adjusted according to the analysis results, until high-temperature ion implantation is performed on the substrate to be prepared through each of the nanostructures to obtain an intermediate state substrate of the silicon carbide MOSFET; wherein the intermediate state substrate is used to process several functional layers after high-temperature annealing treatment and surface coating preparation to prepare the silicon carbide MOSFET.

2. The method for high temperature ion implantation of silicon carbide MOSFET according to claim 1, characterized in that the step of pre-treating the substrate for preparing the silicon carbide MOSFET to obtain the substrate to be prepared comprises:

Surface cleaning and polishing of substrates used to prepare silicon carbide MOSFETs;

The substrate that has been surface cleaned and polished is subjected to surface oxidation treatment or surface passivation treatment to obtain the substrate to be prepared.

3. The method for high-temperature ion implantation of silicon carbide MOSFET according to claim 1, characterized in that the step of acquiring specification parameters and performance parameters of the substrate to be prepared, and analyzing the high-temperature ion implantation scheme of the substrate to be prepared according to the specification parameters and performance parameters of the substrate to be prepared, and obtaining the high-temperature ion implantation scheme of the substrate to be prepared comprises:

Collecting data on specification parameters and performance parameters of the substrate to be prepared to obtain specification parameters and performance parameters of the substrate to be prepared;

Performing digital simulation processing on the substrate to be prepared according to the specification parameters of the substrate to be prepared, so as to obtain a substrate digital model used for performing digital simulation feedback on the substrate to be prepared;

Performing effect simulation processing on high temperature ion implantation according to the performance parameters of the substrate to be prepared to obtain implantation effect simulation characteristics;

Acquire target preparation morphological parameters of the silicon carbide MOSFET, and perform morphological simulation on the target preparation morphological parameters based on the substrate digital model to obtain a substrate target preparation model;

According to the implantation effect simulation characteristics, a reverse simulation analysis of the preparation scheme of the substrate target preparation model is performed to obtain a high-temperature ion implantation scheme corresponding to the substrate target preparation model.

4. The method for high temperature ion implantation of silicon carbide MOSFET according to claim 3, characterized in that the step of performing reverse simulation analysis of the preparation scheme on the substrate target preparation model according to the injection effect simulation characteristics to obtain the high temperature ion implantation scheme corresponding to the substrate target preparation model comprises:

Setting a plurality of implantation positions based on the digital model of the substrate;

Simulating and analyzing the high-temperature ion implantation forms according to each of the implantation positions to obtain a set of high-temperature ion implantation forms for each of the implantation positions; wherein the set of high-temperature ion implantation forms includes a plurality of high-temperature ion implantation forms, and the high-temperature ion implantation forms include ion beam energy, ion dose, implantation direction angle, implantation depth, and implantation rate;

According to the implantation effect simulation characteristics, the high temperature ion implantation form set is subjected to effect simulation processing to obtain form effect characteristics of each of the high temperature ion implantation forms;

Combining and processing each of the high-temperature ion implantation forms of the high-temperature ion implantation form set to obtain an implantation execution step consisting of several high-temperature ion implantation forms, and performing corresponding combination processing according to the effect characteristics of each of the forms to obtain the overall effect characteristics of each of the implantation execution steps;

Taking the overall effect features as the theoretical effect set of the injection position, analyzing and processing the constituent components of the substrate target preparation model according to the theoretical effect sets, and obtaining several component schemes corresponding to the substrate target preparation model; wherein the component schemes include the overall effect features selected from the theoretical effect sets;

The feasibility of each component scheme is evaluated to obtain feasibility parameters of each component scheme, and the component scheme with the best feasibility parameters is used as the high-temperature ion implantation scheme.

5. The method for high temperature ion implantation of silicon carbide MOSFET according to claim 1, characterized in that the step of performing nanostructure preparation processing on the substrate to be prepared according to the high temperature ion implantation scheme to obtain a plurality of nanostructures disposed on the surface of the substrate to be prepared for guiding high temperature ion implantation comprises:

The high temperature ion implantation scheme is analyzed to obtain various implantation positions for implanting high temperature ions into the substrate to be prepared and implantation execution steps corresponding to the various implantation positions in the high temperature ion implantation scheme;

Performing a substrate impact analysis of the injection process on the substrate to be prepared according to the injection execution steps to obtain injection impact characteristics of the substrate to be prepared corresponding to each of the injection execution steps;

A guiding countermeasure analysis is performed on the implantation influencing feature to obtain a nanostructure for guiding high-temperature ion implantation in the implantation execution step to offset the implantation influencing feature.

6. The method for high temperature ion implantation of silicon carbide MOSFET according to claim 1, characterized in that the step of heating the substrate to be prepared so that the substrate to be prepared is in a working state, and implanting high temperature ions into the substrate to be prepared in the working state through the nanostructure according to the high temperature ion implantation scheme comprises:

Performing a heating treatment on the substrate to be prepared so that the substrate to be prepared is in a working state;

Analyzing the execution order of each of the injection execution steps to obtain the execution order mark of each of the injection execution steps;

According to the execution order marks of the respective implantation execution steps, the implantation execution steps are sequentially executed on the corresponding implantation positions on the substrate to be prepared in the working state.

7. The method for high-temperature ion implantation of silicon carbide MOSFET according to claim 4, characterized in that real-time data collection is performed on the high-temperature ion implantation effect of the substrate to be prepared to obtain high-temperature ion implantation effect characteristics, the high-temperature ion implantation effect characteristics are analyzed, and parameters of subsequent high-temperature ion implantation are adjusted according to the analysis results, until the substrate to be prepared is implanted with high-temperature ions through each of the nanostructures to obtain an intermediate state substrate of the silicon carbide MOSFET, the step comprises:

When the implantation execution step is performed on the implantation position of the substrate to be prepared, equipment operation information of a high-temperature ion implantation equipment that performs high-temperature ion implantation on the substrate to be prepared is obtained as a first effect feature of the implantation execution step;

The substrate to be prepared that receives high-temperature ion implantation is subjected to multi-dimensional data acquisition through a preset sensor group, and various monitoring parameters of the substrate to be prepared during the process of receiving high-temperature ion implantation are obtained, and various monitoring parameters are used together as the second effect characteristics of the implantation execution step; wherein the sensor group includes an infrared temperature sensor, a charge sensor, and a photoelectric spectrum sensor;

Combining the first effect characteristic with the second effect characteristic to obtain a high temperature ion implantation effect characteristic of the implantation execution step;

Performing effect analysis on the high temperature ion implantation effect characteristics according to a preset standard to obtain effect deviation characteristics of the implantation execution step;

Adjusting parameters of the subsequent implantation execution step based on the effect deviation characteristics, and performing high-temperature ion implantation on the substrate to be prepared according to the implantation execution step after the parameter adjustment;

The above steps are repeatedly performed until the substrate to be prepared is subjected to high-temperature ion implantation corresponding to each of the implantation execution steps through each of the nanostructures, thereby obtaining an intermediate state substrate of a silicon carbide MOSFET.

8. The method for high temperature ion implantation of silicon carbide MOSFET according to claim 7, characterized in that the step of performing effect analysis on the high temperature ion implantation effect characteristics according to a preset standard to obtain the effect deviation characteristics of the implantation execution step comprises:

Using the overall effect characteristics corresponding to each of the injection execution steps as a preset standard;

performing feedback analysis processing on the substrate condition of the substrate to be prepared according to the high-temperature ion implantation effect characteristics to obtain a substrate condition distribution characteristic of the substrate to be prepared corresponding to the high-temperature ion implantation effect characteristics;

The substrate condition distribution characteristics are compared and processed according to the preset standard to obtain the effect deviation characteristics of the implantation execution step.

9. A silicon carbide MOSFET high temperature ion implantation device, characterized in that it is used to implement a silicon carbide MOSFET high temperature ion implantation method according to any one of claims 1 to 8, comprising:

A pre-processing module, used for pre-processing a substrate for preparing a silicon carbide MOSFET to obtain a substrate to be prepared;

A scheme analysis module, used to obtain specification parameters and performance parameters of the substrate to be prepared, and analyze the high-temperature ion implantation scheme of the substrate to be prepared according to the specification parameters and performance parameters of the substrate to be prepared, so as to obtain the high-temperature ion implantation scheme of the substrate to be prepared;

A surface treatment module, used for performing a nanostructure preparation process on the substrate to be prepared according to the high-temperature ion implantation scheme, to obtain a plurality of nanostructures arranged on the surface of the substrate to be prepared for guiding the high-temperature ion implantation;

a step execution module, configured to heat the substrate to be prepared so that the substrate to be prepared is in a working state, and perform high-temperature ion implantation on the substrate to be prepared in the working state through the nanostructure according to the high-temperature ion implantation scheme;

A step adjustment module is used to collect real-time data on the high-temperature ion implantation effect of the substrate to be prepared, obtain high-temperature ion implantation effect characteristics, analyze the high-temperature ion implantation effect characteristics, and adjust parameters for subsequent high-temperature ion implantation according to the analysis results, until the substrate to be prepared is implanted with high-temperature ions through each of the nanostructures to obtain an intermediate state substrate of the silicon carbide MOSFET; wherein the intermediate state substrate is used to process several functional layers after high-temperature annealing treatment and surface coating preparation to prepare the silicon carbide MOSFET.