CN119290973A - A crystal defect detection and analysis method and system - Google Patents
A crystal defect detection and analysis method and system Download PDFInfo
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Abstract
本发明提供一种晶体缺陷检测分析方法及系统，属于晶体检测技术领域，包括：步骤1：对晶体进行加热和冷却，获取不同烧结条件下的电阻率并确定缺陷的浓度；步骤2：确定载流子的行为受缺陷的吸引力和抑制作用影响，确定注入载流子后的电流响应，确定缺陷的类型；步骤3：获取晶体的光吸收过程，根据光电子的跃迁时间和弛豫时间确定缺陷的迁移动力学；步骤4：创建数值模型，根据温度依赖的载流子输运预测晶体的缺陷行为，获取缺陷的动力学过程；步骤5：将缺陷的浓度、类型、迁移动力学以及动力学过程进行回归分析，提取缺陷的特征参数，实现晶体的缺陷检测分析。解决了晶体缺陷检测成本高，且检测速度较慢，检测深度有限，影响材料性能的问题。
The present invention provides a crystal defect detection and analysis method and system, which belongs to the field of crystal detection technology, and includes: step 1: heating and cooling the crystal, obtaining the resistivity under different sintering conditions and determining the concentration of defects; step 2: determining that the behavior of carriers is affected by the attraction and inhibition of defects, determining the current response after the carriers are injected, and determining the type of defects; step 3: obtaining the light absorption process of the crystal, and determining the migration dynamics of the defects according to the transition time and relaxation time of the photoelectrons; step 4: creating a numerical model, predicting the defect behavior of the crystal according to the temperature-dependent carrier transport, and obtaining the dynamic process of the defects; step 5: regressing the concentration, type, migration dynamics and dynamic process of the defects, extracting the characteristic parameters of the defects, and realizing the defect detection and analysis of the crystal. The problem of high cost of crystal defect detection, slow detection speed, limited detection depth, and affecting material performance is solved.
Description
Technical Field
The invention relates to the technical field of crystal detection, in particular to a crystal defect detection and analysis method and system.
Background
With the rapid development of material science, the crystal affects the physical, chemical and mechanical properties of the material, so the defect detection of the crystal is an important technology.
However, the conventional crystal defect detection requires special technicians to perform operation and data analysis, and has the disadvantages of complex operation, high detection cost and slower detection speed, meanwhile, the detection technology is too surface, the detection depth is limited, the defects inside the crystal cannot be accurately obtained, the performance of the material is affected, and the method cannot be used for the production of semiconductor devices.
Therefore, the invention provides a crystal defect detection and analysis method and system.
Disclosure of Invention
The invention provides a crystal defect detection analysis method and system, which are used for solving the defects that the traditional crystal defect detection in the prior art requires special technicians to perform operation and data analysis, is complex in operation, high in detection cost and low in detection speed, and meanwhile, the detection technology is too surface and limited in detection depth, so that defects in a crystal cannot be accurately obtained, the performance of a material is influenced, and the method and the system cannot be used for the production of a semiconductor device.
In one aspect, the present invention provides a crystal defect detection and analysis method, including:
Step 1, heating and cooling the crystal to obtain the resistivity of the crystal under different sintering conditions, and determining the concentration of defects according to the resistivity;
step 2, determining that the behavior of the carrier is influenced by the attractive force and the inhibiting effect of the defect according to the charge injection technology, determining the current response and the resistance change after the carrier is injected according to the attractive force and the inhibiting effect, and determining the type of the defect according to the current response and the resistance change;
Step 3, acquiring the light absorption process of the crystal under different lights according to the light absorption spectrum, determining the transition time and the relaxation time of photoelectrons, and determining the migration dynamics of defects according to the transition time and the relaxation time of the photoelectrons;
step 4, creating a numerical model, predicting defect behaviors of the crystal at different temperatures according to temperature-dependent carrier transport and defect movement, and obtaining a defect dynamic process;
And 5, carrying out regression analysis on the concentration, type, migration dynamics and dynamics process of the defects, extracting characteristic parameters of the defects, and realizing defect detection analysis of crystals according to the characteristic parameters.
According to the crystal defect detection analysis method provided by the invention, the resistivity of the crystal under different sintering conditions is obtained by heating and cooling the crystal, and the defect concentration is determined according to the resistivity, and the method comprises the following steps:
determining the type of a target crystal according to X-ray diffraction, and determining the heating temperature range and the cooling temperature range of the crystal according to the type;
Heating and cooling the crystal at different temperatures according to the heated temperature range and the cooled temperature range in combination with a heating rate and a cooling rate;
Acquiring the resistivity of the crystal under different sintering conditions based on a four-point probe method according to heating and cooling results;
determining movement of electrons according to the resistivity, and determining conductivity of the crystal according to the movement of electrons;
and determining the conductivity of the crystal according to the conductivity of the crystal and the physical parameter of the crystal, and determining the concentration of the defects according to the conductivity.
According to the crystal defect detection analysis method provided by the invention, the behavior of a carrier is determined to be influenced by the attraction and inhibition effect of the defect according to the charge injection technology, the current response and the resistance change after the carrier is injected are determined according to the attraction and inhibition effect, and the type of the defect is determined according to the current response and the resistance change, and the method comprises the following steps:
introducing external charges into the crystal through ion implantation, and continuously scanning a region containing a carrier injection region to obtain a surface potential diagram of the scanned region;
determining the behavior capability of the carrier in the crystal according to the surface potential diagram, and determining the influence of the attractive force and the inhibition of the defect on the carrier according to the behavior capability;
Determining electrical parameters after carrier injection according to attractive force and inhibition effect;
Determining a current response and a resistance change according to the electrical parameter;
And determining response parameters and resistance change trends according to the current responses and the resistance changes, and determining the types of defects according to the response parameters and the resistance change trends.
According to the crystal defect detection analysis method provided by the invention, the light absorption process of the crystal under different lights is obtained according to the light absorption spectrum, the transition time and the relaxation time of photoelectrons are determined, and the migration dynamics of defects are determined according to the transition time and the relaxation time of the photoelectrons, and the method comprises the following steps:
acquiring spectrum dark lines of the crystal under different wavelengths of light according to the light absorption spectrum, and determining energy level transition of the crystal according to the spectrum dark lines;
Determining the light absorption process of the crystal under different lights according to the energy level transition of the crystal;
Determining the transition time and the relaxation time of photoelectrons according to the light absorption process, and acquiring defect information which causes the shortening of the service life of carriers according to the transition time and the relaxation time of the photoelectrons;
And determining migration dynamics of the defects according to the defect information.
According to the crystal defect detection analysis method provided by the invention, a numerical model is created, and the defect behaviors of the crystal at different temperatures are predicted according to temperature-dependent carrier transport and defect movement, so as to obtain the dynamic process of the defect, and the method comprises the following steps:
Creating a numerical model according to a Monte Carlo method, and inputting temperature-dependent carrier transport and defect movement into the numerical model;
Obtaining a prediction result of the numerical model, and determining defect behaviors of the crystal at different temperatures according to the prediction result;
And determining the movement and change of the defect in the crystal according to the defect behavior, and acquiring the dynamic process of the defect according to the movement and change.
According to the crystal defect detection analysis method provided by the invention, regression analysis is carried out on the concentration, type, migration dynamics and dynamics process of the defects, the characteristic parameters of the defects are extracted, and the crystal defect detection analysis is realized according to the characteristic parameters, and the method comprises the following steps:
Regression analysis is carried out on the concentration, the type, the migration dynamics and the dynamics process of the defects, defect property information is obtained according to analysis results, and failure mode prediction is carried out on the identified defects based on the defect property information;
Obtaining a defect formation mechanism and a propagation path according to a prediction result;
And extracting characteristic parameters of the defects according to the formation mechanism and the propagation path of the defects, acquiring corresponding repair strategies according to the characteristic parameters, and realizing defect detection analysis of crystals according to the repair strategies.
According to the crystal defect detection analysis method provided by the invention, regression analysis is carried out on the concentration, type, migration dynamics and dynamics process of defects, defect property information is obtained according to analysis results, and failure mode prediction is carried out on the identified defects based on the defect property information, and the method comprises the following steps:
determining variation parameters of a plurality of data items according to the concentration, the type, the migration dynamics and the dynamics process of the defects, and constructing a variation monitoring sequence of each data item based on the variation parameters;
Acquiring abnormal characteristics of each data item through a variation monitoring sequence of the data item, and carrying out regression matching analysis on the abnormal characteristics to determine the predicted defect type of each data item;
taking the repeatedly occurring predicted defect types in all data items as qualitative defects of the crystal;
retrieving defect description explicit features and defect description implicit features of the qualitative defect from a database, and determining crystal integrity under the qualitative defect according to the defect description explicit features and the defect description implicit features;
Determining defect property information of the qualitative defect based on the crystal integrity, wherein the defect property information comprises general defect information, serious defect information and important defect information;
Acquiring a quality degradation and failure evolution relation function of the crystal under the coexistence condition of multiple defects according to defect property information of qualitative defects;
performing independent uncorrelation analysis on each identified defect and other identified defects to obtain an analysis result;
determining association coefficients between each identified defect and other identified defects according to the analysis result;
taking the association coefficient as a parameter value of a quality degradation and failure evolution relation function of the crystal under the multi-defect coexistence condition, and performing function calculation to obtain a function calculation result;
And determining the failure mode of each identified defect according to the function calculation result, wherein the failure modes comprise double-defect coverage failure and multi-defect hiding failure.
On the other hand, the crystal defect detection and analysis system provided by the invention comprises:
The acquisition module is used for acquiring the resistivity of the crystal under different sintering conditions by heating and cooling the crystal, and determining the concentration of defects according to the resistivity;
the first determining module is used for determining that the behavior of the carrier is influenced by the attraction and the inhibition effect of the defect according to the charge injection technology, determining the current response and the resistance change after the carrier is injected according to the attraction and the inhibition effect, and determining the type and the concentration of the defect according to the current response and the resistance change;
The second determining module is used for obtaining the light absorption process of the crystal at different temperatures according to the light absorption spectrum, determining the transition time and the relaxation time of photoelectrons and determining the migration dynamics of defects according to the transition time and the relaxation time of the photoelectrons;
the creation module is used for creating a numerical model, predicting the defect behaviors of the crystal at different temperatures according to temperature-dependent carrier transportation and defect movement, and acquiring the dynamic process of the defect;
And the extraction module is used for carrying out regression analysis on the concentration, type, migration dynamics and dynamics process of the defects, extracting the characteristic parameters of the defects and realizing defect detection analysis of the crystals according to the characteristic parameters.
Compared with the prior art, the application has the following beneficial effects:
the method has the advantages that the concentration, the type, the migration dynamics and the dynamics process of the defects are determined, regression analysis is carried out, the characteristic parameters of the defects are determined, the detection speed can be improved, meanwhile, the detection depth of the crystal is deeper, the crystal does not stay on the surface, the defects in the crystal can be accurately obtained, the performance of materials is improved, the method is accurately used for producing semiconductor devices, and the production efficiency of the devices is improved.
Drawings
In order to more clearly illustrate the invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic flow chart of a crystal defect detection and analysis method according to an embodiment of the present invention;
Fig. 2 is a schematic structural diagram of a crystal defect detection and analysis system according to an embodiment of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1:
the crystal defect detection and analysis method provided by the embodiment of the invention, as shown in fig. 1, mainly comprises the following steps:
Step 1, heating and cooling the crystal to obtain the resistivity of the crystal under different sintering conditions, and determining the concentration of defects according to the resistivity;
step 2, determining that the behavior of the carrier is influenced by the attractive force and the inhibiting effect of the defect according to the charge injection technology, determining the current response and the resistance change after the carrier is injected according to the attractive force and the inhibiting effect, and determining the type of the defect according to the current response and the resistance change;
Step 3, acquiring the light absorption process of the crystal under different lights according to the light absorption spectrum, determining the transition time and the relaxation time of photoelectrons, and determining the migration dynamics of defects according to the transition time and the relaxation time of the photoelectrons;
step 4, creating a numerical model, predicting defect behaviors of the crystal at different temperatures according to temperature-dependent carrier transport and defect movement, and obtaining a defect dynamic process;
And 5, carrying out regression analysis on the concentration, type, migration dynamics and dynamics process of the defects, extracting characteristic parameters of the defects, and realizing defect detection analysis of crystals according to the characteristic parameters.
In this example, sintering is performed at high temperature after mixing a plurality of metal powders or alloy powders with a small amount of binder to obtain a desired shape and properties.
In this embodiment, the resistivity is a physical quantity describing the degree of obstruction of the current flow by the material.
In this embodiment, the defect concentration refers to the ratio of the number of defects in a material or crystal to the unit volume or area, and the higher the defect concentration, the poorer the quality of the material.
In this embodiment, the charge injection technique is a semiconductor process that can inject positive or negative charges into the semiconductor material to improve its electrical properties.
In this embodiment, the carriers are charges capable of freely moving in the semiconductor, including positive charges (holes) and negative charges (free electrons).
In this embodiment, the resistance of the material changes after injecting the carriers, resulting in a change in current, and the conductivity of the material increases after injecting the carriers, resulting in a decrease in resistance, so that the relationship between current and voltage should be inversely proportional after injecting the charges.
In this embodiment, the defect types in the crystal include:
intrinsic defects are inherent properties of the material itself, such as dislocations, grain boundaries.
External defects are defects formed during crystal growth or processing, such as mechanical damage, chemical corrosion.
Structural defects are defects generated by asymmetry of the internal structure of the crystal, such as twin bonds, holes and the like.
In this embodiment, the time required for an atom to transition from one energy level to another is referred to as the transition time.
In this embodiment, the relaxation time is the time required to describe the return of the atoms to the equilibrium position under external action.
In this embodiment, the migration dynamics of the defect is studied by the transport and diffusion process of the defect in the material, and in this process, the defect moves and evolves continuously along with dislocation motion, and is also affected by the surrounding environment to change in various forms.
In this embodiment, the characteristic parameters of the defect include concentration, diffusion coefficient, mobility, and change slope.
The technical scheme has the advantages that the detection speed can be improved by determining the concentration, the type, the migration dynamics and the dynamics process of the defects and carrying out regression analysis to determine the characteristic parameters of the defects, meanwhile, the detection depth of the crystal is deeper, the crystal does not stay on the surface, the defects in the crystal can be accurately obtained, the performance of the material is improved, the material is accurately used for producing semiconductor devices, and the production efficiency of the devices is improved.
Example 2:
Based on the embodiment 1, the embodiment of the invention obtains the resistivity of the crystal under different sintering conditions by heating and cooling the crystal, and determines the defect concentration according to the resistivity, comprising the following steps:
determining the type of a target crystal according to X-ray diffraction, and determining the heating temperature range and the cooling temperature range of the crystal according to the type;
Heating and cooling the crystal at different temperatures according to the heated temperature range and the cooled temperature range in combination with a heating rate and a cooling rate;
Acquiring the resistivity of the crystal under different sintering conditions based on a four-point probe method according to heating and cooling results;
determining movement of electrons according to the resistivity, and determining conductivity of the crystal according to the movement of electrons;
and determining the conductivity of the crystal according to the conductivity of the crystal and the physical parameter of the crystal, and determining the concentration of the defects according to the conductivity.
In this embodiment, X-ray diffraction is a method for detecting and analyzing the structure and properties of a substance, and information on crystals can be obtained by studying phenomena such as bending, scattering, and absorption of atoms or ions occurring under X-ray irradiation.
In this embodiment, the crystal is a solid material having an ordered arrangement of atoms, ions or molecules, and the internal particles thereof are regularly arranged, such as single crystals, polycrystals, and amorphous states.
In this embodiment, the temperature range of the crystal during heating may affect the structure and performance, and the different types of crystal are heated in different temperature ranges, for example:
Single crystals (e.g., quartz, silicon, etc.) are solid at room temperature and undergo a structural change when heated to about 700 degrees celsius to form a high melting point covalent bond.
The polycrystal (such as silicon carbide, silicon nitride, etc.) has high thermal stability and chemical stability, and can obtain good crystalline structure by heating at 600-1100 deg.C.
In this embodiment, the heating rate of the crystal refers to the rate of change of temperature of the crystal during heating.
In this embodiment, the four-point probe method is a method for measuring the electric field intensity in the semiconductor material, and the internal electric field intensity of the semiconductor material is calculated by measuring the potential differences of the four test points, so that more accurate material parameters can be obtained.
In this example, sintering is performed at high temperature after mixing a plurality of metal powders or alloy powders with a small amount of binder to obtain a desired shape and properties.
In this embodiment, the resistivity is a physical quantity describing the degree of obstruction of the current flow by the material.
In this embodiment, the conductivity of the crystal refers to the ability of electrons in the crystal to move freely and participate in current transfer.
In this embodiment, the physical parameters of the crystal include density, young's modulus, and coefficient of thermal expansion.
In this embodiment, the conductivity of the crystal refers to the ability of the crystal to pass current.
The technical scheme has the advantages that the heating temperature range and the cooling temperature range are determined according to the types of the crystals, the resistivity of the crystals under different sintering conditions is obtained, so that the conductivity of the crystals is determined, the concentration of defects is obtained, the distribution of the defects in the crystals can be determined, the internal structure of the material can be better understood, the quality of the material is evaluated, and the reliability and the performance of the crystal material are improved.
Example 3:
Based on embodiment 2, the embodiment of the invention determines that the behavior of the carrier is influenced by the attraction and the inhibition effect of the defect according to the charge injection technology, determines the current response and the resistance change after the carrier is injected according to the attraction and the inhibition effect, determines the type of the defect according to the current response and the resistance change, and comprises the following steps:
introducing external charges into the crystal through ion implantation, and continuously scanning a region containing a carrier injection region to obtain a surface potential diagram of the scanned region;
determining the behavior capability of the carrier in the crystal according to the surface potential diagram, and determining the influence of the attractive force and the inhibition of the defect on the carrier according to the behavior capability;
Determining electrical parameters after carrier injection according to attractive force and inhibition effect;
Determining a current response and a resistance change according to the electrical parameter;
And determining response parameters and resistance change trends according to the current responses and the resistance changes, and determining the types of defects according to the response parameters and the resistance change trends.
In this embodiment, ion implantation is a doping technique in a semiconductor process, mainly used to improve the conductivity and electrical characteristics of a semiconductor material, and can accurately dope a specific type of external charge into the semiconductor material to achieve a predetermined electrical effect.
In this embodiment, the carriers are charges capable of freely moving in the semiconductor, including positive charges (holes) and negative charges (free electrons).
In this embodiment, the surface potential map refers to an image of the electrochemical potential of a particular surface measured and plotted.
In this embodiment, the electrical parameters after carrier injection include resistivity, conductivity, and mobility.
In this embodiment, the defect types in the crystal include:
intrinsic defects are inherent properties of the material itself, such as dislocations, grain boundaries.
External defects are defects formed during crystal growth or processing, such as mechanical damage, chemical corrosion.
Structural defects are defects generated by asymmetry of the internal structure of the crystal, such as twin bonds, holes and the like.
The technical scheme has the advantages that the method comprises the steps of carrying out scanning on the carrier injection, obtaining the surface potential diagram of the scanning area, determining the behavior capability of the carrier in the crystal, determining the electrical parameters after the carrier is injected, obtaining the type of the defect, and rapidly determining the specific cause of the problem, so that the method can carry out targeted repair and prevention, is beneficial to shortening the repair time, reducing the maintenance cost and improving the overall working efficiency.
Example 4:
Based on embodiment 3, the embodiment of the invention obtains the light absorption process of the crystal under different lights according to the light absorption spectrum, determines the transition time and the relaxation time of photoelectrons, determines the migration dynamics of defects according to the transition time and the relaxation time of the photoelectrons, and comprises the following steps:
acquiring spectrum dark lines of the crystal under different wavelengths of light according to the light absorption spectrum, and determining energy level transition of the crystal according to the spectrum dark lines;
Determining the light absorption process of the crystal under different lights according to the energy level transition of the crystal;
Determining the transition time and the relaxation time of photoelectrons according to the light absorption process, and acquiring defect information which causes the shortening of the service life of carriers according to the transition time and the relaxation time of the photoelectrons;
And determining migration dynamics of the defects according to the defect information.
In this embodiment, the light absorption spectrum is a method of measuring the absorption characteristics of a substance for light of different wavelengths, and when light is irradiated onto the substance, an absorption phenomenon occurs, that is, a part of the light is absorbed and converted into heat energy.
In this embodiment, a spectral dark line means that in spectral analysis, light rays of certain specific wavelengths are absorbed, resulting in darkening of spectral lines around those wavelengths, which absorption lines are generated by absorption and scattering of light by atoms and molecules of the substance.
In this embodiment, the energy level transition of the crystal means that when an electron is injected into the crystal, it enters an atomic orbit containing a plurality of different energy levels, and when the electron transitions from one energy level to another, a secondary energy level transition process occurs, which causes energy transfer and transitions the electron from a low energy level to a high energy level, or vice versa.
In this embodiment, light absorption refers to the absorption of photons of certain specific wavelengths by an atom or molecule in a substance when light is directed onto the substance, which photons interact with the electrons of the atom and raise it from a lower energy state to a higher energy state, which causes the temperature of the substance to rise and the same wavelength photons to be released.
In this embodiment, the time required for an atom to transition from one energy level to another is referred to as the transition time.
In this embodiment, the relaxation time is the time required to describe the return of the atoms to the equilibrium position under external action.
In this embodiment, defect information that leads to a reduction in carrier lifetime includes radiation damage, hot carrier scattering, chemical defects.
In this embodiment, the migration dynamics of the defect is studied by the transport and diffusion process of the defect in the material, and in this process, the defect moves and evolves continuously along with dislocation motion, and is also affected by the surrounding environment to change in various forms.
The technical scheme has the beneficial effects that defect information which leads to the shortening of the service life of carriers is obtained according to the transition time and the relaxation time of photoelectrons, so that the migration dynamics of the defects are determined, the movement rule of the defects in the material is better understood, the performance of the material is optimized, and the reliability of the material is improved.
Example 5:
Based on embodiment 4, the embodiment of the invention creates a numerical model, predicts the defect behaviors of the crystal at different temperatures according to temperature-dependent carrier transport and defect movement, and obtains the dynamic process of the defect, which comprises the following steps:
Creating a numerical model according to a Monte Carlo method, and inputting temperature-dependent carrier transport and defect movement into the numerical model;
Obtaining a prediction result of the numerical model, and determining defect behaviors of the crystal at different temperatures according to the prediction result;
And determining the movement and change of the defect in the crystal according to the defect behavior, and acquiring the dynamic process of the defect according to the movement and change.
In this embodiment, the monte carlo method is a numerical calculation method for solving a numerical model by simulating an actual problem by random sampling, and uses a large number of random variables which are independently and uniformly distributed as samples, and analyzes the samples, thereby obtaining probability distribution about real parameters.
In this embodiment, the numerical model is a computer program that utilizes mathematical formulas and algorithms to simulate and predict natural and social phenomena, typically based on certain assumptions and constraints of the actual system, and uses numerical calculation methods to simulate and analyze the dynamic behavior of the system.
In this embodiment, temperature-dependent carrier transport refers to the process of movement and transport of electrons and holes in a semiconductor material, which is changed by the influence of temperature, and as the temperature increases, the average energy of carriers increases, thereby causing more carriers to acquire sufficient energy for transport, which increases charge density and accelerates charge transport.
In this embodiment, the defect motion refers to a phenomenon in which various atoms or ions present in a crystal structure irregularly vibrate, rotate, or move.
In this embodiment, the defect behavior includes the generation, movement, merging, disappearance of defects.
In this embodiment, the dynamic process of the defect refers to the acting force and moment to which the defect is subjected during irregular movement, and the movement rule of the defect.
The technical scheme has the advantages that the defect behaviors of the crystal at different temperatures are determined according to the prediction results of the numerical model, so that the movement and the change of the defect in the crystal are determined, the performance of the material under different conditions can be predicted, the stability of the defect is determined, and the use efficiency of the material is improved.
Example 6:
Based on embodiment 5, the embodiment of the invention carries out regression analysis on the concentration, type, migration dynamics and dynamics process of the defects, extracts the characteristic parameters of the defects, realizes defect detection analysis of crystals according to the characteristic parameters, and comprises the following steps:
Regression analysis is carried out on the concentration, the type, the migration dynamics and the dynamics process of the defects, defect property information is obtained according to analysis results, and failure mode prediction is carried out on the identified defects based on the defect property information;
Obtaining a defect formation mechanism and a propagation path according to a prediction result;
And extracting characteristic parameters of the defects according to the formation mechanism and the propagation path of the defects, acquiring corresponding repair strategies according to the characteristic parameters, and realizing defect detection analysis of crystals according to the repair strategies.
In this embodiment, the plurality of measured data for the defect includes a type of defect, a concentration of the defect, a mobility of the defect, and a dynamic process of the defect.
In this embodiment, the regression analysis is a data analysis method for determining the quantitative relationship of interdependence between two or more variables, and can be used to evaluate the strength of the relationship between the variable (explanatory variable) and the dependent variable (response variable), predict the change of the dependent variable, and understand the patterns in the data, such as unary regression, multiple regression.
In this embodiment, defect property information refers to specific characteristics of defects present in the crystal and related information such as severity, location, number.
In this embodiment, failure mode prediction refers to predicting and preventing the occurrence of these failures in advance by analyzing potential failure modes and the results thereof, and failure modes refer to various failure modes that may occur in crystals, for example, in crystals, possible failure modes include surface roughness, excessive impurities.
In this embodiment, defects in the crystal refer to deviations between the internal structure of the crystal and the ideal perfect lattice structure, which can affect the physical, chemical and mechanical properties of the material, such as:
Point defects-defects that occur on an atomic scale, such as:
vacancies, where one or more atoms in the crystal lattice are missing, are typically generated by thermal excitation at high temperature, and may also be introduced by irradiation or plastic deformation.
Interstitial atoms-additional atoms appear in the lattice at positions that should be empty, typically due to excessive addition or external pressure.
Impurity atoms, atoms other than the matrix element, occupy normal positions in the crystal lattice, usually due to the incorporation of the impurity element during material synthesis.
Line defects, which are dislocations, exist on one-dimensional lines of a crystal lattice, such as:
Edge dislocations, in which one portion of the crystal slides relative to another portion on a line in the lattice.
Screw dislocation, a part of the crystal lattice is rotationally slipped along the dislocation line.
Mixed dislocation, which has the characteristics of both blade type and screw type dislocation.
The mechanism of dislocation formation is generally related to plastic deformation, temperature change, grain boundary movement, and external stress.
Surface defects, which are grain boundaries and subgrain boundaries, exist between grains or between differently oriented regions within grains, such as:
grain boundaries, interfaces between adjacent grains, generally have a relatively high energy.
Subgrain boundary-the interface within a grain consisting of small regions of slightly differently oriented grains.
The formation of grain boundaries is generally related to factors such as cooling rate, component distribution, and external stress during crystallization.
In this embodiment, defects in the crystal are not only formed inside the crystal but also propagate inside the crystal, and the propagation path of the defects depends on the type of defects and their distribution in the crystal, for example:
The propagation of point defects propagates inside the material by means of diffusion.
The propagation of line defects is a slip or climb along lattice planes, propagating inside the material.
Propagation of the surface defects is achieved by migration of grain boundaries.
In this embodiment, the characteristic parameters of the defect include concentration, diffusion coefficient, mobility, and change slope.
The technical scheme has the advantages that the defect property information is obtained through regression analysis of the measured data of the defects, failure mode prediction is carried out, the forming mechanism and the propagation path of the defects are determined, the positions of the defects in the crystal can be rapidly positioned, corresponding repairing strategies can be accurately obtained, the effectiveness of the strategies is improved, and performance problems caused by the defects are reduced.
Example 7:
based on embodiment 6, the embodiment of the invention carries out regression analysis on the concentration, type, migration dynamics and dynamics process of the defects, obtains defect property information according to analysis results, carries out failure mode prediction on the identified defects based on the defect property information, and comprises the following steps:
determining variation parameters of a plurality of data items according to the concentration, the type, the migration dynamics and the dynamics process of the defects, and constructing a variation monitoring sequence of each data item based on the variation parameters;
Acquiring abnormal characteristics of each data item through a variation monitoring sequence of the data item, and carrying out regression matching analysis on the abnormal characteristics to determine the predicted defect type of each data item;
taking the repeatedly occurring predicted defect types in all data items as qualitative defects of the crystal;
retrieving defect description explicit features and defect description implicit features of the qualitative defect from a database, and determining crystal integrity under the qualitative defect according to the defect description explicit features and the defect description implicit features;
Determining defect property information of the qualitative defect based on the crystal integrity, wherein the defect property information comprises general defect information, serious defect information and important defect information;
Acquiring a quality degradation and failure evolution relation function of the crystal under the coexistence condition of multiple defects according to defect property information of qualitative defects;
performing independent uncorrelation analysis on each identified defect and other identified defects to obtain an analysis result;
determining association coefficients between each identified defect and other identified defects according to the analysis result;
taking the association coefficient as a parameter value of a quality degradation and failure evolution relation function of the crystal under the multi-defect coexistence condition, and performing function calculation to obtain a function calculation result;
And determining the failure mode of each identified defect according to the function calculation result, wherein the failure modes comprise double-defect coverage failure and multi-defect hiding failure.
In this embodiment, the change parameter of the data item is, for example, a defect type, where the change parameter of the defect type generally refers to a change rule of the defect in time, location or property, for example:
Time change whether a defect changes over time, for example, fatigue of the material over time can lead to the appearance of a defect.
Position change-whether or not the defect changes as the object moves.
Property change-whether the nature of the defect changes with time, position, etc., such as the change of material properties with temperature.
In this embodiment, the sequence of monitoring the amount of change in the data item is a tool or method for monitoring the change in the data item, and may track the dynamic change in the data item.
In this embodiment, regression matching analysis is a statistical method used to study the relationship between two or more variables.
In this example, qualitative defects of the crystal refer to inherent defects present in the crystal structure that may affect the physical, chemical and mechanical properties of the material.
In this embodiment, the explicit feature of the defect refers to a directly observed, obvious, easily identifiable feature, such as:
appearance characteristics such as color change, cracks, depressions, protrusions, and shape anomalies.
Surface features such as scratches, corrosion, abrasion, oxidation.
Structural features such as fractures, dislocations, strain, stress distribution.
Performance characteristics such as strength, hardness, toughness, and thermal conductivity.
In this embodiment, the implicit characteristics of the defect are those that are not easily perceived or obvious, but affect the performance and safety of the product to some extent, such as:
Material properties such as crystal structure, impurities, phase transition points.
Manufacturing processes such as temperature control, pressure, additives.
The use environment is humidity, temperature and pollution.
Design defects such as design errors, omission, unreasonable.
In this example, quality degradation refers to the gradual degradation of the crystal over time during use until the desired quality criteria are not met.
In this embodiment, the failure evolution relationship function is a process of evaluating the influence of factors such as product design, materials, and processes on product failure, and determining potential failure modes, wherein a failure mode refers to a type of failure that may occur under specific conditions, and a failure refers to a phenomenon that the failure causes the product to lose function or reduce performance, and the failure evolution relationship function is a model describing the relationship between failure modes of the product.
In this embodiment, the basic defect independent uncorrelation analysis is a method for evaluating the correlation between two or more defects, which is based mainly on the principle of "mutual influence", considering that if two defects are uncorrelated in some way, their influence in other ways may also be different.
In this embodiment, the relevance coefficient is a statistical index for measuring the strength of the relationship between two variables, and the closer to 1, the stronger the relationship between the two variables is, the closer to-1, the stronger the relationship between the two variables is, and the closer to 0, the relationship between the two variables is, and the no obvious relationship between the two variables is.
The technical scheme has the advantages that the concentration, the type, the migration dynamics and the dynamics process of the defects are subjected to regression analysis, defect property information is obtained, the identified defects are subjected to failure mode prediction, the complexity of defect analysis and prediction can be reduced, the analysis efficiency is improved, further, the crystal failure and faults caused by the defects can be avoided, and meanwhile, the reliability and the safety of the crystal can be improved.
Example 8:
the invention provides a crystal defect detection and analysis system, as shown in fig. 2, comprising:
The acquisition module is used for acquiring the resistivity of the crystal under different sintering conditions by heating and cooling the crystal, and determining the concentration of defects according to the resistivity;
the first determining module is used for determining that the behavior of the carrier is influenced by the attraction and the inhibition effect of the defect according to the charge injection technology, determining the current response and the resistance change after the carrier is injected according to the attraction and the inhibition effect, and determining the type and the concentration of the defect according to the current response and the resistance change;
The second determining module is used for obtaining the light absorption process of the crystal at different temperatures according to the light absorption spectrum, determining the transition time and the relaxation time of photoelectrons and determining the migration dynamics of defects according to the transition time and the relaxation time of the photoelectrons;
the creation module is used for creating a numerical model, predicting the defect behaviors of the crystal at different temperatures according to temperature-dependent carrier transportation and defect movement, and acquiring the dynamic process of the defect;
And the extraction module is used for carrying out regression analysis on the concentration, type, migration dynamics and dynamics process of the defects, extracting the characteristic parameters of the defects and realizing defect detection analysis of the crystals according to the characteristic parameters.
The technical scheme has the advantages that the detection speed can be improved by determining the concentration, the type, the migration dynamics and the dynamics process of the defects and carrying out regression analysis to determine the characteristic parameters of the defects, meanwhile, the detection depth of the crystal is deeper, the crystal does not stay on the surface, the defects in the crystal can be accurately obtained, the performance of the material is improved, the material is accurately used for producing semiconductor devices, and the production efficiency of the devices is improved.
From the above description of the embodiments, it will be apparent to those skilled in the art that the embodiments may be implemented by means of software plus necessary general hardware platforms, or of course may be implemented by means of hardware. Based on this understanding, the foregoing technical solution may be embodied essentially or in a part contributing to the prior art in the form of a software product, which may be stored in a computer readable storage medium, such as ROM/RAM, a magnetic disk, an optical disk, etc., including several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute the method described in the respective embodiments or some parts of the embodiments.
It should be noted that the above-mentioned embodiments are merely for illustrating the technical solution of the present invention, and not for limiting the same, and although the present invention has been described in detail with reference to the above-mentioned embodiments, it should be understood by those skilled in the art that the technical solution described in the above-mentioned embodiments may be modified or some technical features may be equivalently replaced, and these modifications or substitutions do not make the essence of the corresponding technical solution deviate from the spirit and scope of the technical solution of the embodiments of the present invention.
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