CN119220942A - A high magnetic performance magnetic code disk FeCoCr material and preparation method thereof - Google Patents
A high magnetic performance magnetic code disk FeCoCr material and preparation method thereof Download PDFInfo
- Publication number
- CN119220942A CN119220942A CN202411229398.6A CN202411229398A CN119220942A CN 119220942 A CN119220942 A CN 119220942A CN 202411229398 A CN202411229398 A CN 202411229398A CN 119220942 A CN119220942 A CN 119220942A
- Authority
- CN
- China
- Prior art keywords
- fecocr
- target
- sputtering
- layer
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 62
- 239000000463 material Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 238000004544 sputter deposition Methods 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000000137 annealing Methods 0.000 claims abstract description 15
- 239000000956 alloy Substances 0.000 claims abstract description 9
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 39
- 239000010410 layer Substances 0.000 claims description 28
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 239000000696 magnetic material Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 description 8
- 230000005415 magnetization Effects 0.000 description 8
- 239000002356 single layer Substances 0.000 description 7
- 229910002546 FeCo Inorganic materials 0.000 description 5
- 238000009830 intercalation Methods 0.000 description 5
- 230000002687 intercalation Effects 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 229910017061 Fe Co Inorganic materials 0.000 description 2
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910001004 magnetic alloy Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910019918 CrB2 Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- G—PHYSICS
- G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
- G16C—COMPUTATIONAL CHEMISTRY; CHEMOINFORMATICS; COMPUTATIONAL MATERIALS SCIENCE
- G16C20/00—Chemoinformatics, i.e. ICT specially adapted for the handling of physicochemical or structural data of chemical particles, elements, compounds or mixtures
- G16C20/10—Analysis or design of chemical reactions, syntheses or processes
-
- G—PHYSICS
- G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
- G16C—COMPUTATIONAL CHEMISTRY; CHEMOINFORMATICS; COMPUTATIONAL MATERIALS SCIENCE
- G16C60/00—Computational materials science, i.e. ICT specially adapted for investigating the physical or chemical properties of materials or phenomena associated with their design, synthesis, processing, characterisation or utilisation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computing Systems (AREA)
- Bioinformatics & Cheminformatics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Bioinformatics & Computational Biology (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
本发明提供了一种高磁性能磁码盘FeCoCr材料及其制备方法，涉及磁性材料技术领域，包括：（1）通过磁控溅射方法，在基底上，依次交替直流溅射B靶、FeCoCr靶、B靶和FeCoCr靶，然后再溅射Ta层，得到制备态薄膜；（2）将所述制备态薄膜进行分级退火处理。本发明在提高FeCoCr合金薄膜硬磁性的同时实现更加均匀的微结构，为其在高密度磁码盘领域的应用提供重要的科学数据支持，又具有较低的成本。
The present invention provides a high magnetic performance magnetic code disk FeCoCr material and a preparation method thereof, which relates to the field of magnetic material technology, including: (1) on a substrate, by a magnetron sputtering method, alternately DC sputtering a B target, a FeCoCr target, a B target and a FeCoCr target in sequence, and then sputtering a Ta layer to obtain a prepared film; (2) subjecting the prepared film to a graded annealing treatment. The present invention improves the hard magnetic properties of the FeCoCr alloy film while achieving a more uniform microstructure, providing important scientific data support for its application in the field of high-density magnetic code disks, and having a lower cost.
Description
Technical Field
The invention relates to the technical field of magnetic materials, in particular to a FeCoCr material of a magnetic code disk with high magnetic performance and a preparation method thereof, which can realize the cooperative promotion of coercive force and remanence of a semi-hard magnetic alloy film.
Background
The magnetic encoder is a non-contact position sensor, which converts key motion information such as rotation angle, speed and the like of a detected object into a digital electric signal through a magneto-resistance effect, and is widely applied to the field of high-precision control such as high-end numerical control machine tools and the like. The accuracy of the magnetic encoder directly affects the machining accuracy of the numerical control machine, and the accuracy of the magnetic encoder depends on the density and uniformity of the magnetic pole signals. Compared with optical encoders, magnetic encoders have various excellent characteristics such as vibration resistance, corrosion resistance, pollution resistance, low cost, simple structure, and the like, and are increasingly used.
The core constituting the magnetic encoding device is a magnetic code wheel material having excellent magnetic properties. According to the practical application requirements of the magnetic code disc, the code disc material has moderate coercive force and high remanence so as to facilitate the writing (magnetizing) and detection of magnetic pole signals. The enough residual magnetic energy ensures that the code disc has reliable output signal intensity, and the relatively high coercive force can ensure that the magnetic code disc has sufficient electromagnetic interference resistance on the premise that the magnetic poles are easy to write.
The FeCoCr-based alloy film with amplitude modulation decomposition characteristic is an important component of a permanent magnet material family, and compared with a plurality of alloy materials such as SmCo, ndFeB, fe (Co) Pt, coCrTa and the like, the semi-hard magnetic FeCoCr-based alloy film has the practical advantages of good mechanical property, no rare earth or noble metal element, higher Curie temperature (Tc is about 650 ℃), convenience for magnetization and the like, and is expected to be applied to a future high-precision magnetic encoder as a novel magnetic encoding recording material. In addition, in combination with practical application requirements of magnetic code wheel materials, uniformity of the magnetic code wheel materials has important influence on accuracy of a magnetic encoder and stability of recorded magnetic signals. In order to ensure the disturbance resistance and the read-write performance of the magnetic pole signals recorded by the magnetic code disk, the uniformity problem of the microstructure needs to be solved.
Therefore, the improvement and uniformity regulation of the magnetic performance of the FeCoCr magnetic code disk material have important significance for developing a high-precision magnetic encoder. How to improve the magnetic performance of FeCoCr film materials and simultaneously consider the uniformity of the materials in small scale is a key problem to be solved urgently.
Disclosure of Invention
Aiming at the problem that the coercive force and the remanence of the FeCoCr film material of the magnetic code disk are difficult to be lifted together and the uniformity of the magnetic code disk material is ensured, the invention provides a method for simultaneously and greatly improving the coercive force and the remanence of the FeCoCr film and ensuring the uniformity of the material through the structural design of the material. Specifically, the technical scheme of the invention comprises the following steps:
A preparation method of a FeCoCr material of a magnetic code disc with high magnetic performance comprises the following steps:
(1) The B target, the FeCoCr target, the B target and the FeCoCr target are sequentially and alternately sputtered on the substrate by a magnetron sputtering method, then the Ta layer is sputtered to obtain a prepared film, and the complete amplitude modulation decomposition of the FeCoCr-based film is more favorably realized by constructing a [ B/FeCoCrMoTi ]2 two-period multilayer film structure, so that the coercive force and the remanence are synchronously and greatly improved. Specifically, after high-temperature annealing, B atoms are preferentially combined with Cr atoms to generate a CrB2 phase, so that the concentration of Cr atoms in the FeCo-rich phase is reduced, even a part of the FeCo-rich phase is generated into a FeCo ferromagnetic phase, the residual magnetization intensity can be greatly improved, and the B can be more fully combined with Cr through a two-period structure.
Preferably, the FeCoCr target used in sputtering is FeCoCrMoTi alloy target with nominal composition Fe: co: cr: mo=42:25:30:3:1 (wt%), feCoCrMoTi may be abbreviated FeCoCr.
The background vacuum degree in the sputtering process is lower than 3×10 -5 Pa, and the Ar partial pressure is maintained at 0.4: 0.4 Pa.
(2) And carrying out graded annealing treatment on the prepared film.
Preferably, the vacuum degree of the graded annealing treatment is less than or equal to 5 multiplied by 10 -5 Pa, the constant temperature annealing is carried out for 15 to 25 minutes at 700 to 750 ℃, and then the temperature is reduced to 600 to 650 ℃ for 25 to 35 minutes. The graded annealing at two temperatures is beneficial to obtaining high magnetic properties.
Preferably, the graded anneal is performed by first annealing at a constant temperature of 700 ℃ for 20 min and then reducing the temperature to 630 ℃ for 30: 30 min.
Preferably, the substrate material is selected from a silicon substrate or a non-magnetic stainless steel substrate.
Preferably, the reaction conditions for sputtering the B target are 200W for 11 minutes and 6 seconds, the conditions for sputtering the FeCoCr target are 100W for 27 minutes and 30 seconds, and the conditions for sputtering the Ta layer are 50W for 5 minutes and 33 seconds.
The invention also provides the FeCoCr material of the magnetic code disk with high magnetic performance, which is prepared by the method and comprises a substrate, a B layer, a FeCoCrMoTi layer and a protective layer, wherein the thickness of the B layer is 10-50nm, and the thickness of the FeCoCrMoTi layer is 100nm.
Preferably, the thickness of the B layer is 20nm and the thickness of the FeCoCrMoTi layer is 100nm.
Preferably, the FeCoCr material has a structure of substrate/B/FeCoCrMoTi/B/FeCoCrMoTi/Ta.
Furthermore, the material provided by the invention is applied to the field of magnetic code disks of high-precision magnetic encoders.
The technical scheme of the invention has the beneficial effects that at least:
The invention can lead the coercive force of the FeCoCr film to be introduced into the 20nm B layer, and the coercive force and the remanence of the FeCoCr film respectively reach 610 Oe and 5340 Oe, and compared with FeCoCrMoTi single-layer films, the coercive force and the remanence of the FeCoCr film are improved by 24.5 percent and 135.1 percent, thereby being capable of meeting the practical application requirements of a magnetic encoder code disc. Meanwhile, the radius of the B atom is smaller, and the diffusion behavior of the B atom in the annealing process has less influence on the uniformity of the microstructure of the film.
According to the change of enthalpy of thermodynamics and chemical reaction of B atoms and Fe, co and Cr, the B atoms are preferentially combined with Cr atoms to generate CrB 2 phase, and repel Co or Fe atoms, so that the content of Cr in the FeCo-rich phase is further reduced, the concentration difference of Cr atoms in the Fe-Co-rich phase and the Cr-rich phase is gradually increased, further amplitude modulation decomposition is promoted, and experimental results show that the unit cell volumes of newly generated CrB 2 phase and Fe 0.7Co0.3 phase in the wave film are 23.45A 3 and 23.52A 3 respectively, which are very close to the amplitude modulation decomposition phase, and the uniformity of the nano-scale microstructure is improved. Therefore, the invention can improve the hard magnetism of the FeCoCr alloy film and realize a more uniform microstructure, thereby providing important scientific data support for the application of the FeCoCr alloy film in the field of high-density magnetic code discs and having lower cost.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 shows the M-H curves for FeCoCrMoTi films without B intercalation and after B intercalation was introduced, where (a) is a FeCoCrMoTi (200 nm) monolayer film sample and (B) is a B (20 nm)/FeCoCrMoTi (100 nm)/B (20 nm)/FeCoCrMoTi (100 nm) multilayer film sample.
Fig. 2 (a) and (B) are B1 s high resolution XPS spectra obtained at different etch depths for a single layer film sample and a multi-layer film sample before and after introduction of the B layer, respectively.
Detailed Description
The technical scheme of the invention is described below with reference to the accompanying drawings.
In embodiments of the invention, words such as "exemplary," "such as" and the like are used to mean serving as an example, instance, or illustration. Any embodiment or design described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments or designs. Rather, the term use of an example is intended to present concepts in a concrete fashion. Furthermore, in embodiments of the present invention, the meaning of "and/or" may be that of both, or may be that of either, optionally one of both.
In the embodiments of the present invention, "image" and "picture" may be sometimes used in combination, and it should be noted that the meaning of the expression is consistent when the distinction is not emphasized. "corresponding" and "corresponding" are sometimes used interchangeably and it should be noted that the meaning they are intended to express is consistent when de-emphasizing their distinction.
In embodiments of the present invention, sometimes a subscript such as W 1 may be wrongly written in a non-subscript form such as W1, and the meaning of the expression is consistent when the distinction is not emphasized.
In order to make the technical problems, technical solutions and advantages to be solved more apparent, the following detailed description will be given with reference to the accompanying drawings and specific embodiments.
Example 1
Step S1, providing a basal layer and FeCoCrMoTi alloy targets, wherein the nominal components of the targets are Fe, co, cr, mo and Ti=42:25:30:3:1 (wt%);
S2, sequentially and alternately sputtering a B target, a FeCoCr target, a B target and a FeCoCr target on a substrate by a magnetron sputtering method, and then sputtering a Ta layer to obtain a prepared film, wherein the background vacuum degree is lower than 3X 10 -5 Pa, the Ar gas partial pressure is maintained at 0.4 Pa in the sputtering process, the reaction condition of the sputtering B target is that the sputtering power is 200W, the sputtering rate is 0.03 nm/S, the sputtering time is 11 minutes and 6 seconds, the condition of the sputtering of the FeCoCr target is that the sputtering power is 100W, the sputtering rate is 0.06 nm/S, the sputtering time is 27 minutes and 30 seconds, the sputtering power of the sputtering Ta layer is 50W, the sputtering rate is 0.03 nm/S, and the sputtering time is 5 minutes and 33 seconds;
And step S3, performing constant temperature annealing on the prepared film at 700 ℃ for 20 min, and then reducing the temperature to 630 ℃ for 30min, wherein the vacuum degree of the annealing environment is better than 5 multiplied by 10 -5 Pa.
The magnetic code disc film material FeCoCr prepared in the embodiment has the structure of substrate/B (20 nm)/FeCoCrMoTi (100 nm)/B (20 nm)/FeCoCrMoTi (100 nm)/Ta.
Comparative example 1
Unlike example 1, in which the FeCoCr target was sputtered only once on the substrate in step S2, the magnetic code disk thin film material FeCoCr was prepared to have a structure of substrate/FeCoCrMoTi (100 nm)/Ta (10 nm).
Comparative example 2
The difference from example 1 is that the B target and the FeCoCr target are sputtered on the substrate only once in step S2, and the prepared magnetic code disc film material FeCoCr has the structure of substrate/B (20 nm)/FeCoCrMoTi (100 nm)/Ta (10 nm).
The coercive force was about 400 Oe and the remanent magnetization was 3000 Oe.
As shown in FIGS. 1 (a) and (B), the M-H curves of FeCoCrMoTi films before and after introduction of the B layer, respectively. From the graph, the coercive force and the remanence of the film are obviously improved after the B layer is introduced. Specifically, prior to introduction of layer B, the FeCoCrMoTi monolayer film sample had an in-plane coercivity of 490 Oe and a remanent magnetization of 185 emu/cm 3 (2325 Oe). When the thickness of the B intercalation layer is 20nm, the coercive force in the in-plane direction, the residual magnetization and the saturation magnetization are all rapidly improved along with the increase of the thickness of the B layer. When the B intercalation thickness is 20nm, the coercive force reaches the maximum value 610 Oe, and the residual magnetization is 435 emu/cm 3 (5466 Oe). Compared with FeCoCrMoTi, the coercivity and the remanence of the monolayer film are respectively improved by 24.5 percent and 135.1 percent. Meanwhile, the material has uniformity of a nano-scale microstructure.
Fig. 2 (a) and (B) are B1s high resolution XPS spectra obtained at different etch depths for FeCoCrMoTi a monolayer film samples and multilayer film samples, respectively, before and after introduction of the B layer. This indicates the presence of CrB 2 phase in the multilayer film sample of [ B (20 nm)/FeCoCrMoTi (100 nm) ] 2.
In the single-layer film sample, as the amplitude modulation decomposition process is carried out, the concentration difference of Cr atoms in the Fe-Co rich phase and the Cr-rich phase is gradually increased, the gradient energy and the strain energy are also increased, and when the concentration difference of the two phases reaches a certain value, the gradient energy and the strain energy can prevent the further amplitude modulation decomposition. However, for the multilayer film sample after B intercalation is introduced, B atoms tend to combine with Cr atoms to generate CrB 2 phases so as to repel Fe or Co atoms, and the chemical energy overcomes gradient energy and strain energy, so that the composition difference of FeCo-rich phases and Cr-rich phases is enlarged, and a new Fe 0.7Co0.3 magnetic enhancement phase is generated in a partial area, thereby effectively promoting amplitude modulation decomposition reaction. Resulting in a significant increase in the remanent magnetization. Domain wall pinning enhancement due to the generation of hetero-phases (Fe 0.7Co0.3 and CrB 2 phases) and the increase of phase composition difference is a main cause of coercivity enhancement. According to the invention, chemical energy is introduced by doping the B element to overcome gradient energy and strain energy, so that the effective promotion of amplitude modulation decomposition reaction is realized, and a new feasible way is developed for synchronous optimization of the coercive force and residual magnetic property of FeCoCr semi-hard magnetic alloy. In addition, the influence on the uniformity of the film microstructure is reduced as much as possible by utilizing the smaller radius of the B atoms, which is beneficial to improving the uniformity of the nano-scale microstructure. The invention improves the magnetic performance of the film and simultaneously gives consideration to the uniformity of the material, thereby providing important scientific basis for the preparation and application of the novel high-performance magnetic code disc.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411229398.6A CN119220942A (en) | 2024-09-03 | 2024-09-03 | A high magnetic performance magnetic code disk FeCoCr material and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411229398.6A CN119220942A (en) | 2024-09-03 | 2024-09-03 | A high magnetic performance magnetic code disk FeCoCr material and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN119220942A true CN119220942A (en) | 2024-12-31 |
Family
ID=94064649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202411229398.6A Pending CN119220942A (en) | 2024-09-03 | 2024-09-03 | A high magnetic performance magnetic code disk FeCoCr material and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN119220942A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5516547A (en) * | 1991-09-06 | 1996-05-14 | International Business Machines Corporation | Method for fabricating magnetic recording medium |
| CN112927881A (en) * | 2021-01-21 | 2021-06-08 | 山东非金属材料研究所 | Component gradient magnetic metal-magnetic oxide particle film and preparation method thereof |
| CN114086136A (en) * | 2021-11-10 | 2022-02-25 | 季华实验室 | A kind of FeCoCr magnetic code disk thin film material and preparation method thereof |
| CN114606471A (en) * | 2022-04-01 | 2022-06-10 | 季华实验室 | FeCoCr magnetic code disk thin film material and preparation method and application thereof |
| CN115612988A (en) * | 2022-10-18 | 2023-01-17 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | High-magnetic-performance FeGaB magnetoelectric film and preparation method thereof |
| CN117418197A (en) * | 2023-09-27 | 2024-01-19 | 季华实验室 | FeCoCr film and preparation method and application thereof |
-
2024
- 2024-09-03 CN CN202411229398.6A patent/CN119220942A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5516547A (en) * | 1991-09-06 | 1996-05-14 | International Business Machines Corporation | Method for fabricating magnetic recording medium |
| CN112927881A (en) * | 2021-01-21 | 2021-06-08 | 山东非金属材料研究所 | Component gradient magnetic metal-magnetic oxide particle film and preparation method thereof |
| CN114086136A (en) * | 2021-11-10 | 2022-02-25 | 季华实验室 | A kind of FeCoCr magnetic code disk thin film material and preparation method thereof |
| CN114606471A (en) * | 2022-04-01 | 2022-06-10 | 季华实验室 | FeCoCr magnetic code disk thin film material and preparation method and application thereof |
| CN115612988A (en) * | 2022-10-18 | 2023-01-17 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | High-magnetic-performance FeGaB magnetoelectric film and preparation method thereof |
| CN117418197A (en) * | 2023-09-27 | 2024-01-19 | 季华实验室 | FeCoCr film and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0883418A (en) | Magnetic recording medium and magnetic recording and reproducing device | |
| JP4337209B2 (en) | Permanent magnet thin film and manufacturing method thereof | |
| CN101814294B (en) | Electric writing magnetic storing element and device thereof as well as information record reproducing and manufacturing methods | |
| Chen et al. | Experimental and computational analysis of the two-step demagnetization behavior of the surface grains of sintered Nd-Fe-B magnets | |
| CN119220942A (en) | A high magnetic performance magnetic code disk FeCoCr material and preparation method thereof | |
| CN115491647B (en) | Magnetic code disc composite film and preparation method thereof | |
| JP2780588B2 (en) | Stacked magnetic head core | |
| JP3367334B2 (en) | Magnetic head and magnetic disk drive using the same | |
| CN119101875A (en) | A high-performance magnetic code disk AlNiCo composite film material and preparation method thereof | |
| KR20170108505A (en) | Complex permanent magnet and method for manufacturing the same | |
| JP3999677B2 (en) | Method for manufacturing magnetic recording medium | |
| Haeiwa et al. | (Fe, Co)-P thin films prepared with a reactive evaporation method | |
| JP3070667B2 (en) | Magnetoresistive element | |
| CN115110034B (en) | High-performance FeCoCr magnetic code disk composite film and preparation method and application thereof | |
| JPH0283809A (en) | Manufacturing method of thin film magnetic head | |
| Bhatti et al. | Realization of energy harvesting based on stress-induced modification of magnetic domain structures in microwires | |
| JP2003100515A (en) | Soft magnetic thin film with high saturation magnetization for magnetic core | |
| JP2000307170A (en) | Magnetoresistive device and magnetoresistive memory device | |
| JPS59125607A (en) | High saturation magnetization and high permeability magnetic film | |
| JP3132254B2 (en) | Soft magnetic film and method for manufacturing soft magnetic multilayer film | |
| Ming et al. | Optimization of high B {sub sat} FeCo films for write pole applications | |
| JPS6216268B2 (en) | ||
| JPH07109809B2 (en) | CoCr-based perpendicular magnetic recording medium | |
| CN105755439A (en) | SmCo alloy film and preparation method thereof | |
| JP2853204B2 (en) | Method of manufacturing magnetoresistive element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |