CN119188437A - A method for solving particle aggregation at the edge of wafer polishing - Google Patents
A method for solving particle aggregation at the edge of wafer polishing Download PDFInfo
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- CN119188437A CN119188437A CN202411699577.6A CN202411699577A CN119188437A CN 119188437 A CN119188437 A CN 119188437A CN 202411699577 A CN202411699577 A CN 202411699577A CN 119188437 A CN119188437 A CN 119188437A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
本发明公开了一种解决晶圆抛光边缘颗粒聚集的方法，属于半导体制造技术领域。该方法包括：在进行晶圆最终抛光工序之前，将晶圆依次分别浸渍于SC1溶液、HF溶液、O3水溶液中，得到亲水表面的晶圆，然后进行最终抛光作业；其中，晶圆在SC1溶液中的处理时间为1‑6 min，SC1溶液的温度为30‑70℃；晶圆在HF溶液中的处理时间为1‑200 s；晶圆在O3水溶液中的处理时间为1‑200 s。本发明通过化学的方式改变晶圆抛光前的表面状态，能够使晶圆在抛光后抛光液及时完全的清理干净，从而避免抛光过程中因无法及时清除抛光液造成的边缘颗粒聚集。本发明实用性广，工艺流程简单，处理时间短，成本较低，具有良好的应用前景。
The invention discloses a method for solving the problem of particle aggregation at the edge of wafer polishing, and belongs to the field of semiconductor manufacturing technology. The method comprises: before the final polishing process of the wafer is performed, the wafer is immersed in SC1 solution, HF solution, and O 3 aqueous solution in sequence to obtain a wafer with a hydrophilic surface, and then the final polishing operation is performed; wherein the processing time of the wafer in the SC1 solution is 1-6 min, and the temperature of the SC1 solution is 30-70°C; the processing time of the wafer in the HF solution is 1-200 s; the processing time of the wafer in the O 3 aqueous solution is 1-200 s. The present invention changes the surface state of the wafer before polishing by chemical means, so that the polishing liquid of the wafer can be cleaned up in time and completely after polishing, thereby avoiding the edge particle aggregation caused by the inability to remove the polishing liquid in time during the polishing process. The present invention has wide practicability, simple process flow, short processing time, low cost, and good application prospects.
Description
Technical Field
The invention relates to a method for solving the problem of aggregation of polished edge particles of a wafer, and belongs to the technical field of semiconductor manufacturing.
Background
Semiconductor technology has evolved rapidly over the last few decades, with silicon wafer sizes increasing from 50mm a to 300 a mm a, while critical dimensions are continually shrinking. As device dimensions are gradually reduced and the depth of focus of optical lithographic apparatus is reduced, the demands on the silicon wafer surface by integrated circuit fabrication processes are consequently increasing to the nanometer level. The number of particles and the distribution of particles on the wafer surface can greatly affect the final yield.
After final polishing, the wafer needs to be cleaned to remove the polishing solution on the surface and further remove particles and metals on the surface. If the polishing solution cannot be timely and comprehensively removed, micro corrosion can be carried out on the surface of the wafer, so that the surface state of the wafer is affected, and local particle aggregation of the wafer is easily caused.
Disclosure of Invention
Based on the problems in the prior art, the invention aims to provide a method for solving the problem of particle aggregation at the edge of a wafer, which is used in a cleaning process before polishing by fine polishing to solve the problem of particle aggregation at the edge of the wafer caused by corrosion of polishing solution after polishing.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
A method for solving the problem of wafer polishing edge particle aggregation comprises the steps of respectively immersing a wafer in an SC1 solution, an HF solution and an O 3 aqueous solution in sequence before a wafer final polishing process to obtain a wafer with a hydrophilic surface, and then performing final polishing operation, wherein the treatment time of the wafer in the SC1 solution is 1-6 min, the temperature of the SC1 solution is 30-70 ℃, the treatment time of the wafer in the HF solution is 1-200 s, the treatment time of the wafer in the O 3 aqueous solution is 1-200 s, and the concentration of O 3 in the O 3 aqueous solution is 5-30ppm.
According to this solution, three different solutions are used to treat the wafer prior to the final polishing operation. The SC1 solution, the hydrofluoric acid solution and the ozone water solution are sequentially selected for processing the wafer, and the wafer is finally immersed in the O 3 water solution, so that the surface of the wafer is provided with an oxide film with a certain thickness, and the oxide film is obtained by adopting the SC 1. The hydrofluoric acid solution and the ozone water solution are adopted, so that the metal level of the surface of the wafer can be reduced while the oxide film is obtained, and the pollution of the metal to the polishing and polishing machine table is reduced.
Further, the wafers were washed with deionized water after immersion treatment in each solution, respectively. The final polishing operation is finish polishing, and the wafer is subjected to drying treatment before final polishing.
Preferably, the SC1 solution is a mixed solution of an ammonia water solution and hydrogen peroxide solution, and the volume ratio of the ammonia water solution to the hydrogen peroxide solution to the water is (0.5-10): 1 (10-30). Wherein the mass percentage concentration of the ammonia water solution is 20-37%, and the mass percentage concentration of the hydrogen peroxide solution is 14-30%.
Preferably, the HF solution has a mass percentage concentration of 10-23%.
Preferably, the flow rate of the O 3 aqueous solution is 5-30L/min.
Compared with the prior art, the technical scheme provided by the embodiment of the invention has the following advantages:
(1) The invention changes the surface state of the wafer before polishing in a chemical way, and can clean the polishing liquid of the wafer completely in time after polishing, thereby avoiding the aggregation of edge particles caused by the fact that the polishing liquid cannot be cleaned in time in the polishing process.
(2) The method provided by the invention has the advantages of wide practicability, simple process flow, short treatment time, lower cost, less damage to the wafer and low metal content on the surface of the wafer, can be used in a cleaning process before polishing, can completely solve the problem of edge particle aggregation caused by the polishing process, improves the subsequent final cleaning effect, and has good application prospect.
Drawings
Fig. 1 is a graph of the wafer edge particle integrated output channel (DC) output detected using the SP5 XP wafer defect detector in example 1.
Fig. 2 is a photograph of the wafer edge particle integrated output channel (DC) output detected using the SP5 XP wafer defect detector in the comparative example.
Detailed Description
In order that the above objects, features and advantages of the invention will be more clearly understood, a further description of the invention will be made.
The method for solving the problem of wafer polishing edge particle aggregation comprises the steps of respectively immersing a wafer in an SC1 solution, an HF solution and an O 3 aqueous solution in sequence before wafer polishing, specifically, immersing the wafer in an SC1 solution 1-6 min at 30-70 ℃, taking out the immersed HF solution 1-200 s, finally immersing in an O 3 aqueous solution with the concentration of O 3 of 5-30ppm and the flow of 5-30L/min for 1-200 s, and finally performing final polishing operation after drying.
As a specific embodiment of the invention, the SC1 solution is an ammonia solution, a mixed solution of the hydrogen peroxide solution and water, preferably the volume ratio of the ammonia solution, the hydrogen peroxide solution and the water is (0.5-10): 1 (10-30), such as 0.5:1:10, 10:1:10, 0.5:1:30, 10:1:30, etc. Wherein the mass percentage concentration of the ammonia water solution is 20-37%, such as 22%, 25%, 28%, 30%, 32%, 35% and the like. The mass percentage concentration of the hydrogen peroxide solution is 14-30%, such as 14%, 17%, 20%, 23%, 26%, 30% and the like.
As a specific embodiment of the invention, the processing time of the wafer in the SC1 solution is 1-6 min, such as1 min, 2 min, 3 min, 4 min, 5min, 6 min, and the like.
As a specific embodiment of the invention, the hydrofluoric acid solution has a mass percentage concentration of 10-23%, such as 10%, 13%, 16%, 20%, 23%, etc.
As one embodiment of the invention, the wafer is processed in the hydrofluoric acid solution for 1-200s, such as 1s, 10s, 60s, 100s, 200s, etc.
As a specific embodiment of the invention, the ozone water solution has a mass percentage concentration of 5-30ppm, such as 5ppm, 10ppm, 15ppm, 20ppm, 25ppm, 30ppm, etc. The flow rate of the ozone water solution is 5-30L/min, such as 5L/min, 10L/min, 15L/min, 20L/min, 30L/min, etc.
As one embodiment of the invention, the wafer is treated in the ozone water solution for a period of time ranging from 1 to 200s, such as 1s, 10s, 60s, 100s, 200s, etc.
Example 1
The processing object related in the embodiment is a 300mm wafer, and the adopted method comprises the following steps:
(1) The aqueous solution SC1 is prepared by mixing 37% ammonia 1.5L by mass and 30% hydrogen peroxide 3L by mass with 30L water.
(2) The wafer is placed in SC1 solution at 30 ℃ for standing for 1 min, and then washed by deionized water to remove the SC1 solution on the surface of the wafer.
(3) And then standing the wafer in HF solution with the mass fraction of 10% for 1 min, and washing with deionized water to remove the HF solution on the surface of the wafer.
(4) The wafer was allowed to stand 10: 10 s in an aqueous solution of O 3 at a concentration of 5ppm and a flow rate of 5L/min, and then washed with deionized water to remove an aqueous solution of O 3 on the wafer surface.
(5) And drying the processed wafer, and then performing fine polishing operation to obtain the polished wafer.
Example 2
The processing object related in the embodiment is a 300mm wafer, and the adopted method comprises the following steps:
(1) Mixing ammonia water 1.5L with the mass fraction of 22% and hydrogen peroxide 3L with the mass fraction of 14% with 30L of water to prepare an SC1 solution.
(2) The wafer is placed in SC1 solution at 70 ℃ for standing for 6 min, and then washed by deionized water to remove the SC1 solution on the surface of the wafer.
(3) And standing the wafer in an HF solution with the mass fraction of 0.9% for 6min, and washing with deionized water to remove the HF solution on the surface of the wafer.
(4) And standing the wafer in an O 3 aqueous solution with the concentration of 25ppm and the flow rate of 25L/min for 100s, and then washing the wafer by using deionized water to remove the O 3 aqueous solution on the surface of the wafer.
(5) And drying the processed wafer, and then performing fine polishing operation to obtain the polished wafer.
Comparative example
The present comparative example differs from example 1 in that steps (3) and (4) are omitted in the present comparative example.
Performance test 1 apparent topography analysis
The polished wafer edge particles were detected by using an SP5 XP wafer defect detector, and the wafer edge detection results of the examples and comparative examples are shown in fig. 1 and 2, respectively, in which a picture output by a comprehensive output channel (DC) in SP5 XP detection is shown, and a particle size range corresponding to each color block is marked below the picture. As can be seen by comparison, the edge particles on the wafer surface do not aggregate after being polished again by the cleaning process of the present invention.
Performance test 2 surface Metal analysis
The wafer surface metals after cleaning and after polishing processing of the wafers in example 1 and comparative example were examined using ICP-MS, and the results are shown in table 1.
Table 1 wafer surface metal levels after wafer cleaning and polishing processing in example 1 and comparative example
As can be seen from table 1, the wafer has a poorer surface metal level in the comparative example than in the example.
In summary, from the results of the examples, the comparative examples and the performance test, the method provided by the invention can completely solve the problem of wafer edge aggregation, and within the preferred range of the invention, the aggregation problem can be solved, the wafer metal level before polishing can be reduced, and the pollution of the polishing machine table caused by the processing process can be reduced.
Claims (7)
1. A method for solving the problem of wafer polishing edge particle aggregation is characterized by comprising the steps of respectively immersing a wafer in an SC1 solution, an HF solution and an O 3 aqueous solution in sequence before a wafer final polishing process to obtain a wafer with a hydrophilic surface, and then performing final polishing operation, wherein the treatment time of the wafer in the SC1 solution is 1-6 min, the temperature of the SC1 solution is 30-70 ℃, the treatment time of the wafer in the HF solution is 1-200 s, and the treatment time of the wafer in the O 3 aqueous solution is 1-200 s.
2. The method of claim 1, wherein the wafer is washed with deionized water after each immersion treatment in the solution.
3. The method of claim 2, wherein the final polishing operation is a finish polishing and the wafer is dried prior to final polishing.
4. A method according to any one of claims 1 to 3, wherein the SC1 solution is an aqueous ammonia solution, a mixed solution of an aqueous hydrogen peroxide solution and water, and the volume ratio of the aqueous ammonia solution, the aqueous hydrogen peroxide solution and the water is (0.5-10): 1 (10-30).
5. The method according to claim 4, wherein the mass percentage concentration of the ammonia water solution is 20-37%, and the mass percentage concentration of the hydrogen peroxide solution is 14-30%.
6. A method according to any one of claims 1-3, characterized in that the HF solution has a mass percentage concentration of 10-23%.
7. A method according to any one of claims 1-3, wherein the concentration of O 3 in the O 3 aqueous solution is 5-30ppm and the flow rate of the O 3 aqueous solution is 5-30L/min.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202411699577.6A CN119188437A (en) | 2024-11-26 | 2024-11-26 | A method for solving particle aggregation at the edge of wafer polishing |
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| CN202411699577.6A CN119188437A (en) | 2024-11-26 | 2024-11-26 | A method for solving particle aggregation at the edge of wafer polishing |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103270580A (en) * | 2010-12-16 | 2013-08-28 | 信越半导体股份有限公司 | Semiconductor wafer cleaning method |
| CN110447088A (en) * | 2017-03-29 | 2019-11-12 | 信越半导体株式会社 | The cleaning method of semiconductor crystal wafer |
| CN115398600A (en) * | 2020-04-28 | 2022-11-25 | 信越半导体株式会社 | Method for cleaning semiconductor wafer |
| CN116230493A (en) * | 2022-12-12 | 2023-06-06 | 上海中欣晶圆半导体科技有限公司 | Method for reducing generation of water drop marks on surface of silicon wafer after cleaning |
| CN116631881A (en) * | 2023-05-11 | 2023-08-22 | 郑州合晶硅材料有限公司 | Method for improving edge polishing pollution of heavily doped silicon wafer |
| CN117253778A (en) * | 2023-10-30 | 2023-12-19 | 中环领先半导体材料有限公司 | Wafer cleaning method |
-
2024
- 2024-11-26 CN CN202411699577.6A patent/CN119188437A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103270580A (en) * | 2010-12-16 | 2013-08-28 | 信越半导体股份有限公司 | Semiconductor wafer cleaning method |
| CN110447088A (en) * | 2017-03-29 | 2019-11-12 | 信越半导体株式会社 | The cleaning method of semiconductor crystal wafer |
| CN115398600A (en) * | 2020-04-28 | 2022-11-25 | 信越半导体株式会社 | Method for cleaning semiconductor wafer |
| CN116230493A (en) * | 2022-12-12 | 2023-06-06 | 上海中欣晶圆半导体科技有限公司 | Method for reducing generation of water drop marks on surface of silicon wafer after cleaning |
| CN116631881A (en) * | 2023-05-11 | 2023-08-22 | 郑州合晶硅材料有限公司 | Method for improving edge polishing pollution of heavily doped silicon wafer |
| CN117253778A (en) * | 2023-10-30 | 2023-12-19 | 中环领先半导体材料有限公司 | Wafer cleaning method |
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