CN119173053A - Solar cell and method for manufacturing the same - Google Patents
Solar cell and method for manufacturing the same Download PDFInfo
- Publication number
- CN119173053A CN119173053A CN202411235389.8A CN202411235389A CN119173053A CN 119173053 A CN119173053 A CN 119173053A CN 202411235389 A CN202411235389 A CN 202411235389A CN 119173053 A CN119173053 A CN 119173053A
- Authority
- CN
- China
- Prior art keywords
- layer
- hole transport
- ions
- solar cell
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000010410 layer Substances 0.000 claims abstract description 325
- 230000005525 hole transport Effects 0.000 claims abstract description 86
- 239000000463 material Substances 0.000 claims abstract description 64
- 239000013545 self-assembled monolayer Substances 0.000 claims abstract description 51
- 239000002094 self assembled monolayer Substances 0.000 claims abstract description 40
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 37
- 230000031700 light absorption Effects 0.000 claims abstract description 16
- -1 cesium ions Chemical class 0.000 claims description 67
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 45
- 229910044991 metal oxide Inorganic materials 0.000 claims description 22
- 150000004706 metal oxides Chemical class 0.000 claims description 22
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- 125000000217 alkyl group Chemical group 0.000 claims description 11
- 238000004873 anchoring Methods 0.000 claims description 10
- BAVYZALUXZFZLV-UHFFFAOYSA-N mono-methylamine Natural products NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 9
- MLIREBYILWEBDM-UHFFFAOYSA-N cyanoacetic acid Chemical compound OC(=O)CC#N MLIREBYILWEBDM-UHFFFAOYSA-N 0.000 claims description 8
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 125000000524 functional group Chemical group 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 6
- 239000002105 nanoparticle Substances 0.000 claims description 6
- UCDHYFZYUGDETN-UHFFFAOYSA-N cyanophosphonic acid Chemical compound OP(O)(=O)C#N UCDHYFZYUGDETN-UHFFFAOYSA-N 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 4
- 229910052792 caesium Inorganic materials 0.000 claims description 4
- 150000001735 carboxylic acids Chemical class 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 125000005843 halogen group Chemical group 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims description 3
- 125000000229 (C1-C4)alkoxy group Chemical group 0.000 claims description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 3
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 claims description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 3
- 229910018572 CuAlO2 Inorganic materials 0.000 claims description 3
- 229910016510 CuCrO2 Inorganic materials 0.000 claims description 3
- 229910015711 MoOx Inorganic materials 0.000 claims description 3
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 claims description 3
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 claims description 3
- ZRALSGWEFCBTJO-UHFFFAOYSA-N anhydrous guanidine Natural products NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 claims description 3
- 229910001424 calcium ion Inorganic materials 0.000 claims description 3
- UPGUYPUREGXCCQ-UHFFFAOYSA-N cerium(3+) indium(3+) oxygen(2-) Chemical compound [O--].[O--].[O--].[In+3].[Ce+3] UPGUYPUREGXCCQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001431 copper ion Inorganic materials 0.000 claims description 3
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- ZMZDMBWJUHKJPS-UHFFFAOYSA-N hydrogen thiocyanate Natural products SC#N ZMZDMBWJUHKJPS-UHFFFAOYSA-N 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 claims description 3
- 229910001414 potassium ion Inorganic materials 0.000 claims description 3
- 229910001419 rubidium ion Inorganic materials 0.000 claims description 3
- 229910001432 tin ion Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 238000006479 redox reaction Methods 0.000 abstract description 12
- 238000002161 passivation Methods 0.000 abstract description 10
- 230000007774 longterm Effects 0.000 abstract description 5
- 230000004888 barrier function Effects 0.000 abstract description 4
- 239000000243 solution Substances 0.000 description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 229910000480 nickel oxide Inorganic materials 0.000 description 17
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 17
- 230000008569 process Effects 0.000 description 17
- 239000000758 substrate Substances 0.000 description 17
- 238000000151 deposition Methods 0.000 description 16
- 239000002904 solvent Substances 0.000 description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 238000002360 preparation method Methods 0.000 description 12
- 238000002207 thermal evaporation Methods 0.000 description 10
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- KIMPAVBWSFLENS-UHFFFAOYSA-N 2-carbazol-9-ylethylphosphonic acid Chemical compound C1=CC=CC=2C3=CC=CC=C3N(C1=2)CCP(O)(O)=O KIMPAVBWSFLENS-UHFFFAOYSA-N 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000000137 annealing Methods 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 5
- 230000032683 aging Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 125000003545 alkoxy group Chemical group 0.000 description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 150000001721 carbon Chemical group 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 4
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten(VI) oxide Inorganic materials O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- XIOYECJFQJFYLM-UHFFFAOYSA-N 2-(3,6-dimethoxycarbazol-9-yl)ethylphosphonic acid Chemical compound COC=1C=CC=2N(C3=CC=C(C=C3C=2C=1)OC)CCP(O)(O)=O XIOYECJFQJFYLM-UHFFFAOYSA-N 0.000 description 1
- RVHKUEZAJDZEIH-UHFFFAOYSA-N 3-(3,6-ditert-butylcarbazol-9-yl)propylphosphonic acid Chemical compound C1=C(C(C)(C)C)C=C2C3=CC(C(C)(C)C)=CC=C3N(CCCP(O)(O)=O)C2=C1 RVHKUEZAJDZEIH-UHFFFAOYSA-N 0.000 description 1
- SYPSXKFLPUSGSP-UHFFFAOYSA-N 3-carbazol-9-ylpropylphosphonic acid Chemical compound C1=CC=C2N(CCCP(O)(=O)O)C3=CC=CC=C3C2=C1 SYPSXKFLPUSGSP-UHFFFAOYSA-N 0.000 description 1
- BGEVROQFKHXUQA-UHFFFAOYSA-N 71012-25-4 Chemical compound C12=CC=CC=C2C2=CC=CC=C2C2=C1C1=CC=CC=C1N2 BGEVROQFKHXUQA-UHFFFAOYSA-N 0.000 description 1
- ZNLXWYZMMYDGCE-UHFFFAOYSA-N CC=1C=CC=2N(C3=CC=C(C=C3C=2C=1)C)CCCCP(O)(O)=O Chemical compound CC=1C=CC=2N(C3=CC=C(C=C3C=2C=1)C)CCCCP(O)(O)=O ZNLXWYZMMYDGCE-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- KOPBYBDAPCDYFK-UHFFFAOYSA-N caesium oxide Chemical compound [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 description 1
- 229910001942 caesium oxide Inorganic materials 0.000 description 1
- NCMHKCKGHRPLCM-UHFFFAOYSA-N caesium(1+) Chemical compound [Cs+] NCMHKCKGHRPLCM-UHFFFAOYSA-N 0.000 description 1
- VIFXKEFXKYBGNJ-UHFFFAOYSA-N carbazol-9-ylmethylphosphonic acid Chemical compound C1=CC=C2N(CP(O)(=O)O)C3=CC=CC=C3C2=C1 VIFXKEFXKYBGNJ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- RVPVRDXYQKGNMQ-UHFFFAOYSA-N lead(2+) Chemical compound [Pb+2] RVPVRDXYQKGNMQ-UHFFFAOYSA-N 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229940071182 stannate Drugs 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/84—Layers having high charge carrier mobility
- H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明涉及一种太阳能电池及其制备方法。上述太阳能电池包括依次设置的第一导电层、氧化铝层、第一空穴传输层、钙钛矿光吸收层以及第二导电层。其中，第一空穴传输层为自组装单分子层。上述太阳能电池在第一导电层和钙钛矿光吸收层之间采用自组装单分子层作为第一空穴传输层，能够选择性的传输空穴，并在第一空穴传输层和第一导电层之间设置氧化铝层，氧化铝层能够作为场钝化层，并且氧化铝很难与钙钛矿材料发生氧化还原反应，在太阳能电池长期运行过程中，自组装单分子层有失效的风险，而即便自组装单分子层失效后，氧化铝层也能够作为阻隔层，隔绝第一导电层与钙钛矿材料的接触，防止两者的发生氧化还原反应而降低太阳能电池的稳定性。
The present invention relates to a solar cell and a method for preparing the same. The solar cell comprises a first conductive layer, an aluminum oxide layer, a first hole transport layer, a perovskite light absorption layer and a second conductive layer which are sequentially arranged. The first hole transport layer is a self-assembled monolayer. The solar cell adopts a self-assembled monolayer as the first hole transport layer between the first conductive layer and the perovskite light absorption layer, which can selectively transmit holes, and an aluminum oxide layer is arranged between the first hole transport layer and the first conductive layer. The aluminum oxide layer can serve as a field passivation layer, and it is difficult for aluminum oxide to undergo redox reaction with perovskite materials. During the long-term operation of the solar cell, the self-assembled monolayer has the risk of failure. Even after the self-assembled monolayer fails, the aluminum oxide layer can serve as a barrier layer to isolate the first conductive layer from contact with the perovskite material, thereby preventing the redox reaction between the two and reducing the stability of the solar cell.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a solar cell and a preparation method thereof.
Background
The organic-inorganic metal halide perovskite material has the advantages of excellent photoelectric property, low cost and the like, and is suitable for serving as a light absorption layer of a solar cell. And the band gap of the perovskite material is adjustable, and the perovskite material can be overlapped with other photovoltaic materials such as crystalline silicon and the like to form a laminated solar cell, so that higher photoelectric conversion efficiency is obtained.
Perovskite solar cells typically provide a hole transport layer between the TCO substrate and the perovskite light absorbing layer. Currently, hole transport materials used in perovskite solar cells can be classified into inorganic hole transport materials and organic hole transport materials. The inorganic hole transport material is mainly metal oxide such as nickel oxide, and has good stability, but has oxidation-reduction reaction when contacting with perovskite material, and has poor stability after contacting with the perovskite material. The organic hole transport materials are mainly polymers and self-assembled monolayers (SAMs). It is difficult for the polymer to form a uniformly covered film on the pile substrate. The self-assembled monolayer is used as a single-molecule thin layer, so that the substrate can be uniformly covered, but in the long-term operation process of the solar cell, the self-assembled monolayer has the risk of failure, so that the perovskite light absorption layer is contacted with the TCO substrate, and the perovskite light absorption layer and the TCO substrate react after being contacted, and the stability of the solar cell can be reduced.
Disclosure of Invention
Based on this, it is necessary to provide a solar cell and a preparation method thereof, so as to solve the problem that the perovskite light absorbing layer reacts with the TCO substrate in contact with the self-assembled monolayer to reduce the stability of the solar cell.
The first aspect of the invention provides a solar cell, which comprises the following steps:
A solar cell, comprising:
A first conductive layer;
an alumina layer disposed on the first conductive layer;
the first hole transport layer is arranged on one side, far away from the first conductive layer, of the aluminum oxide layer, and is a self-assembled monolayer;
a perovskite light absorption layer disposed on a side of the first hole transport layer remote from the alumina layer, and
And the second conductive layer is arranged on one side of the perovskite light absorption layer away from the first hole transmission layer.
In one embodiment, the thickness of the alumina layer is 0.1 nm-5 nm.
In one embodiment, the solar cell further comprises:
and a second hole transport layer disposed between the first conductive layer and the alumina layer, the second hole transport layer comprising a metal oxide hole transport material.
In one embodiment, the metal oxide hole transport material includes at least one of doped or undoped NiOw、CuO2、CuO、CuAlO2、CuCrO2、WO3、MoOx、V2O5、VOy、CrOz, where w is 1-2, x is 0.5-3, y is 1-2.5, and z is 1-3.
In one embodiment, the second hole transport layer is a continuous phase dense structure.
In one embodiment, the second hole transport layer is a nanoparticle stack structure.
In one embodiment, the thickness of the second hole transport layer is 2 nm to 200 nm.
In one embodiment, the self-assembled monolayer has functional groups and anchoring groups, the self-assembled monolayer being bonded to the alumina layer through the anchoring groups, the functional groups having dipole moments directed toward the alumina layer.
In one embodiment, the self-assembled monolayer is selected from at least one of the following formulas (1) to (3):
(1)、
(2)、
(3);
Wherein R 1、R2、R9、R10 is independently selected from-H, C C4 alkyl, C1-C4 alkoxy, benzene ring or-X, X is halogen atom, R 3、R5、R11 is independently selected from C1-C4 alkyl, R 7、R8 is independently selected from-H, -CH 3、-C2H5;R4、R6、R12 is independently selected from phosphonic acid, carboxylic acid, cyanoacetic acid or cyanophosphonic acid.
In one embodiment, the material of the first conductive layer includes one or more of indium tin oxide, aluminum doped zinc oxide, indium doped zinc oxide, fluorine doped tin oxide, indium tungsten oxide, and indium cerium oxide.
In one embodiment, the perovskite light absorbing layer comprises perovskite material ABX 3, wherein A comprises one or more of cesium ions, rubidium ions, potassium ions, methylamine ions, formamidine ions, methylenediamine ions, benzamidine cations, and guanidine cations, B comprises one or more of lead ions, copper ions, zinc ions, gallium ions, tin ions, and calcium ions, and X comprises one or more of fluoride ions, chloride ions, bromide ions, iodide ions, thiocyanate ions, tetrafluoroborate ions, hexafluorophosphate ions, formate ions, and acetate ions.
In one embodiment, the material of the second conductive layer includes one or more of Au, ag, and Cu.
The first aspect of the present invention provides a method for manufacturing a solar cell according to any one of the above embodiments, where the method includes:
the preparation method of the solar cell comprises the following steps:
Providing a first conductive layer;
forming an aluminum oxide layer on the first conductive layer;
Forming a first hole transport layer on a side of the aluminum oxide layer away from the first conductive layer;
forming a perovskite light absorption layer on a side of the first hole transport layer away from the alumina layer, and
A second conductive layer is formed on a side of the perovskite light absorbing layer remote from the first hole transporting layer.
In one embodiment, the method of preparing further comprises the steps of, prior to forming the alumina layer:
Forming a second hole transport layer on the first conductive layer, the second hole transport layer comprising a metal oxide hole transport material;
the aluminum oxide layer is formed on a side of the second hole transport layer remote from the first conductive layer.
Compared with the traditional scheme, the solar cell and the preparation method thereof have the following beneficial effects:
According to the solar cell, the self-assembled monolayer is adopted as the first hole transmission layer between the first conductive layer and the perovskite light absorption layer, holes can be selectively transmitted through the self-assembled monolayer, the self-assembled monolayer can uniformly cover the substrate, the aluminum oxide layer is arranged between the first hole transmission layer and the first conductive layer and can serve as the field passivation layer, the aluminum oxide layer is different from other metal oxides, the aluminum oxide is difficult to have oxidation-reduction reaction with the perovskite materials, the self-assembled monolayer has failure risk in the long-term operation process of the solar cell, and even if the self-assembled monolayer fails, the aluminum oxide layer can serve as the blocking layer to isolate the contact between the first conductive layer and the perovskite materials, so that the oxidation-reduction reaction of the first conductive layer and the perovskite materials is prevented, and the stability of the solar cell is reduced.
Drawings
Fig. 1 is a schematic structural diagram of a solar cell according to an embodiment;
Fig. 2 is a schematic structural diagram of a solar cell according to another embodiment.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the invention, whereby the invention is not limited to the specific embodiments disclosed below.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second" may include at least one such feature, either explicitly or implicitly. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed, mechanically connected, electrically connected, directly connected, indirectly connected through an intervening medium, or in communication between two elements or in an interaction relationship between two elements, unless otherwise explicitly specified. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
The term "alkyl" refers to a saturated hydrocarbon containing a primary carbon atom, or a secondary carbon atom, or a tertiary carbon atom, or a quaternary carbon atom, or a combination thereof. The phrase containing the term, for example, "C 1~C4 alkyl" refers to an alkyl group containing 1 to 4 carbon atoms, which at each occurrence may be, independently of one another, C 1 alkyl, C 2 alkyl, C 3 alkyl, C 4 alkyl. The alkyl group may be linear or branched. Suitable examples include, but are not limited to: methyl (Me, -CH 3), ethyl (Et, -CH 2CH3), 1-propyl (n-Pr, n-propyl, -CH 2CH2CH3), 2-propyl (i-Pr, i-propyl, -CH (CH 3)2), 1-butyl (n-Bu, n-butyl, -CH 2CH2CH2CH3), 2-methyl-1-propyl (i-Bu, i-butyl, -CH 2CH(CH3)2), 2-butyl (s-Bu, s-butyl, -CH (CH 3)CH2CH3), 2-methyl-2-propyl (t-Bu, t-butyl, -C (CH 3)3).
The term "alkoxy" refers to a group having an-O-alkyl group, i.e. an alkyl group as defined above, attached to the parent core structure via an oxygen atom. The phrase containing the term, for example, "C 1~C4 alkoxy" means that the alkyl moiety contains 1 to 4 carbon atoms, and each occurrence may be, independently of the other, C 1 alkoxy, C 4 alkoxy, C 5 alkoxy. The alkoxy group may be linear or branched. Suitable examples include, but are not limited to, methoxy (-O-CH 3 or-OMe), ethoxy (-O-CH 2CH3 or-OEt), and t-butoxy (-O-C (CH 3)3 or-OtBu).
As shown in fig. 1, the solar cell 100 of an embodiment includes a first conductive layer 110, an alumina layer 120, a first hole transport layer 130, a perovskite light absorbing layer 140, and a second conductive layer 150.
An aluminum oxide layer 120 is disposed on the first conductive layer 110. The first hole transport layer 130 is disposed on a side of the alumina layer 120 remote from the first conductive layer 110, and the first hole transport layer 130 is a self-assembled monolayer (SAMs). The perovskite light absorbing layer 140 is disposed on a side of the first hole transporting layer 130 remote from the alumina layer 120. The second conductive layer 150 is disposed on a side of the perovskite light absorbing layer 140 remote from the first hole transporting layer 130.
The solar cell 100 employs a self-assembled monolayer as the first hole transport layer 130 between the first conductive layer 110 and the perovskite light absorption layer 140, the self-assembled monolayer being capable of selectively transporting holes, and an alumina layer 120 being disposed between the first hole transport layer 130 and the first conductive layer 110, the alumina layer 120 being capable of acting as a field passivation layer, and the alumina itself being difficult to undergo an oxidation-reduction reaction with the perovskite material, unlike other metal oxides.
As a single molecular thin layer, the self-assembled monolayer can uniformly cover the substrate, but in the long-term operation process of the solar cell 100, the self-assembled monolayer has a risk of failure, and due to the existence of the alumina layer 120, even if the self-assembled monolayer fails, the alumina layer 120 can also serve as a barrier layer to isolate the contact between the first conductive layer 110 and the perovskite material, so that the oxidation-reduction reaction of the first conductive layer and the perovskite material is prevented to reduce the stability of the solar cell 100.
Alternatively, the material of the first conductive layer 110 may be a conductive metal oxide, such as, but not limited to, one or more of Indium Tin Oxide (ITO), aluminum doped zinc oxide (AZO), indium doped zinc oxide (IZO), fluorine doped tin oxide (FTO), indium tungsten oxide (IWO), indium Cerium Oxide (ICO), and the like.
Among these, the alumina layer 120 is preferably a dense layer. During the long-term operation of the solar cell 100, the self-assembled monolayer is at risk of failure, and after the self-assembled monolayer fails, the dense alumina layer 120 can better isolate the contact between the conductive metal oxide in the first conductive layer 110 and the perovskite material, so that the oxidation-reduction reaction of the conductive metal oxide and the perovskite material is prevented, and the stability of the solar cell 100 is reduced.
The alumina layer 120 is preferably an ultra-thin layer, the ultra-thin thickness design being capable of providing conditions for tunneling of carriers.
For example, in some examples, the thickness of the aluminum oxide layer 120 is 0.1 nm to 5nm. Further, in some examples, the thickness of the aluminum oxide layer 120 is 0.5 nm to 3 nm. In some specific examples, the thickness of the alumina layer 120 is 0.1 nm、0.3 nm、0.5 nm、0.8 nm、1 nm、1.3 nm、1.5 nm、1.8 nm、2 nm、2.3 nm、2.5 nm、2.8 nm、3 nm、3.3 nm、3.5 nm、3.8 nm、4 nm、4.3 nm、4.5 nm、4.8 nm、5 nm a or the like.
The perovskite light absorbing layer 140 includes a perovskite material (ABX 3). Wherein a is a monovalent cation including, but not limited to, one or more of cesium ion, rubidium ion, potassium ion, methylamine ion, formamidine ion, methylenediamine ion, benzamidine cation, and guanidine cation. B is a divalent cation including, but not limited to, one or more of lead ion, copper ion, zinc ion, gallium ion, tin ion, and calcium ion. X is a monovalent anion including, but not limited to, one or more of fluoride, chloride, bromide, iodide, thiocyanate, tetrafluoroborate, hexafluorophosphate, formate, and acetate.
In some examples, the perovskite light absorbing layer 140 has a thickness of 20 nm to 2000 nm. Further, in some examples, the perovskite light absorbing layer 140 has a thickness of 100 nm to 1500 nm. Further, in some examples, the perovskite light absorbing layer 140 has a thickness of 30 nm to 600 nm. In some specific examples, the perovskite light absorbing layer 140 has a thickness 20 nm、50 nm、100 nm、200 nm、300 nm、400 nm、500 nm、600 nm、700 nm、800 nm、900 nm、1000 nm、1100 nm、1200 nm、1300 nm、1400 nm、1500 nm、1600 nm、1700 nm、1800 nm、1900 nm、2000 nm a or the like.
Alternatively, the material of the second conductive layer 150 may be, but is not limited to, one or more of Au, ag, cu, etc.
As shown in fig. 1, in some examples, the solar cell 100 further includes a second hole transport layer 160. The second hole transport layer 160 is disposed between the first conductive layer 110 and the alumina layer 120, and the second hole transport layer 160 includes a metal oxide hole transport material.
In the above example, the second hole transport layer 160 is further disposed between the first conductive layer 110 and the alumina layer 120, where the second hole transport layer 160 includes a metal oxide hole transport material, and the metal oxide hole transport material cooperates with the self-assembled monolayer, so that the selective hole transport effect can be further improved, and even if the self-assembled monolayer fails, efficient selective hole transport can be ensured, and the alumina layer 120 can serve as a field passivation layer and also serve as a barrier layer, so as to isolate the contact between the metal oxide hole transport material and the perovskite material in the second hole transport layer 160, and prevent the oxidation-reduction reaction of the metal oxide hole transport material and the perovskite material, thereby reducing the stability of the solar cell 100.
Optionally, the metal oxide hole transport material may be, but is not limited to, one or more of nickel oxide, niO w doped or undoped with a metal element (w is 1-2), cuO 2、CuO、CuAlO2、CuCrO2、WO3、MoOx (x is 0.5-3), V 2O5、VOy (y is 1-2.5), crO z (z is 1-3).
The element doped in the metal oxide is a metal element, and may be one or more of copper, lithium, cesium, magnesium and the like. For example, the doped nickel oxide may be, but is not limited to, one or more of copper doped nickel oxide, lithium doped nickel oxide, cesium doped nickel oxide, magnesium doped nickel oxide.
In some examples, the second hole transport layer 160 is a continuous phase dense structure, for example, the second hole transport layer 160 is prepared by evaporation, magnetron sputtering, atomic layer deposition, and the like, and no gap exists in the second hole transport layer 160.
In addition, the second hole transport layer 160 may also have a nanoparticle stacked structure, for example, the second hole transport layer 160 may be prepared by a solution method, and there may be gaps between the nanoparticles. Specifically, a solution is prepared by dispersing nanoparticles in a solvent, applying the solution on a substrate and drying to form a film.
In some examples, the thickness of the second hole transport layer 160 is 2 nm to 200 nm. Further, in some examples, the thickness of the second hole transport layer 160 is 10 nm to 150 nm. Further, in some examples, the thickness of the second hole transport layer 160 is 10 nm to 30 nm. In some specific examples, the thickness of the second hole transport layer 160 is 2 nm、5 nm、10 nm、20 nm、30 nm、40 nm、50 nm、60 nm、70 nm、80 nm、90 nm、100 nm、110 nm、120 nm、130 nm、140 nm、150 nm、160 nm、170 nm、180 nm、190 nm、200 nm a or the like.
The self-assembled monolayer has functional groups and anchoring groups. The anchoring groups can be bonded to the substrate, for example, to the alumina layer 120. After the self-assembled monolayer is bonded to the alumina layer 120 via the anchoring groups, the functional groups have dipole moments directed toward the alumina layer 120.
Alternatively, the anchoring group may include, but is not limited to, at least one of phosphonic acid, carboxylic acid, cyanoacetic acid, cyanophosphonic acid. The anchoring group enables the SAM material to have good self-assembly capability, can form good combination with the substrate, and enhances acting force with the substrate.
Alternatively, the functional groups may include, but are not limited to, at least one of carbazole, dibenzocarbazole, acridine.
In some examples, the self-assembled monolayer is selected from at least one of the following formulas (1) to (3):
(1)、
(2)、
(3);
Wherein R 1、R2、R9、R10 is independently selected from-H, C C4 alkyl, C1-C4 alkoxy, benzene ring or-X, X is halogen atom, R 3、R5、R11 is independently selected from C1-C4 alkyl, R 7、R8 is independently selected from-H, -CH 3、-C2H5;R4、R6、R12 is independently selected from phosphonic acid, carboxylic acid, cyanoacetic acid or cyanophosphonic acid.
Further, R 1、R2、R9、R10 is independently selected from-OCH 3 or-X, X is a halogen atom. Further, R 1、R2、R9、R10 is independently selected from-OCH 3 or-Br. The above groups are matched with the main body groups in structural energy level, so that the material has better hole extraction capability.
Further, R 3、R5、R11 is independently selected from-C 2H4 -or-C 4H8 -. The above groups are matched with the main body groups in structural energy level, so that the material has better hole extraction capability.
Further, R 7、R8 is independently selected from-H or-CH 3. Further, R 7、R8 is-CH 3. The above groups are matched with the main body groups in structural energy level, so that the material has better hole extraction capability.
Further, R 4、R6、R12 is independently selected from phosphonic acid or cyanophosphonic acid. The group has a plurality of active sites, can enhance acting force with a substrate, and has better anchoring effect.
For example, self-assembled monolayers include, but are not limited to, [6- (9H-carbazol-9-yl) hexyl ] phosphonic acid (6 PACz), [1- (9H-carbazol-9-yl) methyl ] phosphonic acid (1 PACz), [2- (9H-carbazol-9-yl) ethyl ] phosphonic acid (2 PACz), [3- (9H-carbazol-9-yl) propyl ] phosphonic acid (3 PACz), [4- (9H-carbazol-9-yl) butyl ] phosphonic acid (4 PACz), [8- (9H-carbazol-9-yl) octyl ] phosphonic acid (8 PACz), [4- (9H-9 '-phenyl-3, 3' -dicarbazol-9-yl) butyl ] phosphonic acid (4 PABCz), [2- (9H-9 '-phenyl-3, 3' -dicarbazol-9-yl) ethyl ] phosphonic acid (2 PABCz), [4- (diphenylamino) phenyl) propyl ] phosphonic acid (TPA-3), [4- (diphenylamino) phenyl) ethyl ] phosphonic acid (6-methyl) 6-carbazol-6-2-methyl) ethyl ] phosphonic acid (6-35-carbazol-35, [3- (3, 6-dimethyl-9H-carbazol-9-yl) propyl ] phosphonic acid (Me-3 PACz), [6- (3, 6-dimethyl-9H-carbazol-9-yl) hexyl ] phosphonic acid (Me-6 PACz), [8- (3, 6-dimethyl-9H-carbazol-9-yl) octyl ] phosphonic acid (Me-8 PACz), [1- (3, 6-di-tert-butyl-9H-carbazol-9-yl) methyl ] phosphonic acid (tBu-1 PACz), [2- (3, 6-di-tert-butyl-9H-carbazol-9-yl) ethyl ] phosphonic acid (tBu-2 PACz), [3- (3, 6-di-tert-butyl-9H-carbazol-9-yl) propyl ] phosphonic acid (tBu-3 PACz), [4- (3, 6-di-tert-butyl-9H-carbazol-9-yl) butyl ] phosphonic acid (tBu-4 PACz), [6- (3, 6-di-tert-butyl-9H-carbazol-9-yl) methyl ] phosphonic acid (tBu-1 PACz), [2- (3, 6-di-tert-butyl-9H-carbazol-9-yl) ethyl ] phosphonic acid (tBu-3-8-6-yl) propyl) phosphonic acid, [4- (3, 6-di-tert-butyl-9-H-yl) butyl-9-yl) butyl ] phosphonic acid, [2- (3, 6-diphenyl-9H-carbazol-9-yl) ethyl ] phosphonic acid (Ph-2 PACz), [3- (3, 6-diphenyl-9H-carbazol-9-yl) propyl ] phosphonic acid (Ph-3 PACz), [4- (3, 6-diphenyl-9H-carbazol-9-yl) butyl ] phosphonic acid (Ph-4 PACz), [6- (3, 6-diphenyl-9H-carbazol-9-yl) hexyl ] phosphonic acid (Ph-6 PACz), [8- (3, 6-diphenyl-9H-carbazol-9-yl) octyl ] phosphonic acid (Ph-8 PACz), [4- (3, 6-dibromo-9H-carbazol-9-yl) butyl ] phosphonic acid (2 Br-4 PACz), [4- (7H-dibenzo-7-yl) butyl ] phosphonic acid (4 PADCB), [2- (7H-dibenzo-carbazol-7-ethyl ] phosphonic acid (Ph-6 PACz), [8- (3, 6-diphenyl-9H-carbazol-9-yl) octyl ] phosphonic acid (Ph-8 PACz), [4- (3, 6-dibromo-9H-carbazol-9-yl) butyl ] phosphonic acid (2 Br-4 Br-PACz), 2- (7H-carbazol-7-yl) butyl) phosphonic acid, 2- (Me-4-methoxy) ethyl ] phosphonic acid (Me-6-methyl) phenyl) 6 (Me-6-N-propyl) phosphonic acid, [2- (10H-phenoxazin-10-yl) ethyl ] phosphonic acid (2 PAPXZ), [1- (3, 6-dimethyl-9H-carbazol-9-yl) methyl ] phosphonic acid (Me-1 PACz), [4- (3, 6-dimethyl-9H-carbazol-9-yl) butyl ] phosphonic acid (Me-4 PACz), [2- (3, 6-dimethoxy-9H-carbazol-9-yl) ethyl ] phosphonic acid (MeO-2 PACz), [4- (3, 6-dimethoxy-9H-carbazol-9-yl) butyl ] phosphonic acid (MeO-4 PACz), [4- (2, 7-dibromo-9, 9-dimethylacrid-10 (9 hydrogen) -yl) butyl ] phosphonic acid (2 Br-4 PADMAc), [4- (7H-Dibenzocarbazol-7-yl) butyl ] phosphonic acid, [4- (2, 7-dibromo-9, 9-dimethylacrid-10 (9H) -yl) butyl ] phosphonic acid.
As shown in fig. 1, in some examples, the solar cell 100 further includes an electron transport layer 170. An electron transport layer 170 is disposed between the perovskite light absorbing layer 140 and the second conductive layer 150.
Alternatively, the material of the electron transport layer 170 may be one or more of ZnO (zinc oxide), snO 2 (tin oxide), tiO 2 (titanium dioxide), srTiO 3 (strontium titanate), zn 2SnO4 (zinc stannate), zrO 2 (zirconium dioxide), al 2O3 (aluminum oxide), WO 3 (tungsten trioxide), ceO x (cesium oxide), cdS (cadmium sulfide), cdSe (cadmium selenide), baSnO 3 (barium stannate), nb 2O5 (niobium pentoxide), C 60 (fullerene), C 70, PCBM (fullerene derivative).
In some examples, the electron transport layer 170 has a thickness of 1 nm to 30 nm. Further, in some examples, the electron transport layer 170 has a thickness of 5 nm to 20 nm. In some specific examples, the electron transport layer 170 has a thickness of 2 nm, 5 nm, 8 nm, 12 nm, 15 nm, 18 nm, 20 nm, 22 nm, 25 nm, 27 nm, 29 nm, 30 nm, and the like.
The solar cell may be a perovskite single-layer cell or a stacked cell. The stacked cell is, for example, a perovskite/crystalline silicon stacked cell, a full perovskite stacked cell, a perovskite/organic stacked cell, a perovskite/CIGS stacked cell, a perovskite/CdTe stacked cell, a perovskite/GaAs stacked cell, or the like.
For example, the solar cell 200 shown in fig. 2 is a perovskite/crystalline silicon stacked cell, which includes a transparent electrode layer 201, a first doped layer 202, a first amorphous silicon layer 203, a single crystal silicon substrate 204, a second amorphous silicon layer 205, a second doped layer 206, a first conductive layer 207, a second hole transport layer 208, an alumina layer 209, a first hole transport layer 210, a perovskite light absorbing layer 211, an electron transport layer 212, a buffer layer 213, a second conductive layer 214, and an antireflection layer 215, which are stacked in this order. The anti-reflection layer 215 is provided with a first gate line 216, and the transparent electrode layer 201 is provided with a second gate line 217.
It will be appreciated that the solar cell may also comprise other functional layers, such as hole blocking layers, electron blocking layers, etc., and that the person skilled in the art may supplement the structural features of the solar cell on the basis of the technical features described above, as required in carrying out the invention.
Further, the invention also provides a preparation method of the solar cell of any example.
The preparation method of the solar cell in one embodiment comprises the following steps:
step S1, providing a first conductive layer.
And S2, forming an aluminum oxide layer on the first conductive layer.
And S3, forming a first hole transport layer on one side of the aluminum oxide layer away from the first conductive layer.
And S4, forming a perovskite light absorption layer on one side of the first hole transport layer away from the alumina layer.
In step S5, a second conductive layer is formed on a side of the perovskite light absorption layer away from the first hole transport layer.
In some examples, the method of fabricating a solar cell further includes, prior to forming the aluminum oxide layer (step S2), the steps of:
A second hole transport layer is formed on the first conductive layer. The second hole transport layer comprises a metal oxide hole transport material.
In this example, the aluminum oxide layer is formed on a side of the second hole transport layer remote from the first conductive layer.
In some examples, the method of fabricating a solar cell further includes, prior to forming the second conductive layer (step S5), the steps of:
An electron transport layer is formed on a side of the perovskite light absorbing layer remote from the first hole transport layer.
In this example, the second conductive layer is formed on a side of the electron transport layer remote from the first hole transport layer.
The following examples are provided to further illustrate the invention. The following specific examples are provided for a better understanding of the present invention and are not limited to the specific examples, but are not intended to limit the scope and spirit of the present invention.
Example 1
The preparation method of the solar cell provided by the embodiment comprises the following steps:
step 1, obtaining ITO conductive glass with the size of 2.5 cm multiplied by 2.5 cm, cleaning and drying, and then treating 20min in an ultraviolet and ozone environment to obtain a first conductive layer.
And 2, depositing aluminum oxide on the first conductive layer by adopting an ALD (atomic layer deposition) process, forming aluminum oxide with the thickness of about 0.3 nm by three times of cyclic deposition, and then treating 1 min in an ultraviolet and ozone environment to obtain an aluminum oxide layer.
Step 3, preparing 2PACz solution, wherein the solvent adopts ethanol and DMF with the volume ratio of 97:3, and the concentration is 0.5 mg/mL. In a nitrogen glove box, the 2PACz solution was first applied to the alumina layer, 30 s followed by spin-coating at 4000 rpm speed for 10 s, then annealing at 100 ℃ for 10 min, rinsing with ethanol, and then annealing again at 100 ℃ for 5min to give a SAM material layer.
Step 4, preparing perovskite precursor solution, adopting DMF and DMSO in a volume ratio of 4:1 as solvents, adding CsI, FAI, pbI 2 and PbBr 2 into the solvents according to Pb concentration of 1.5 and M, adding 60 mg/mL of methyl amine chloride (MACl), and stirring for 6 h. In a nitrogen glove box, a perovskite precursor solution is applied on the SAM material layer, 5s is spin-coated at a rotation speed of 500 rpm, 50 s is spin-coated at a rotation speed of 4000 rpm, 40 s is spin-coated at a rotation speed of 5000 rpm, chlorobenzene is flushed to the surface of the substrate, and then 20 min is annealed at 120 ℃ to prepare a perovskite material FA 0.8Cs0.2Pb(I0.8Br0.2)3, thereby obtaining a perovskite light absorbing layer.
And 5, preparing a1, 3-propanediamine hydroiodidate solution, wherein isopropanol is adopted as a solvent, and the concentration is 0.5 mg/mL. In a nitrogen glove box, a1, 3-propanediamine hydroiodidate solution was applied on the above perovskite light absorbing layer, spin-coated at a rotation speed of 4000 rpm for 30 s, and then annealed at 100 ℃ for 2 min to obtain a passivation layer.
And 6, depositing C60 with the thickness of 30 nm on the passivation layer by adopting a thermal evaporation process to obtain the electron transport layer.
And 7, depositing BCP (2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline) with the thickness of 6 nm on the electron transport layer by adopting a thermal evaporation process to obtain the hole blocking layer.
And 8, depositing metal Ag with the thickness of 200 nm on the hole blocking layer by adopting a thermal evaporation method to obtain a second conductive layer.
Example 2
The preparation method of the solar cell provided by the embodiment comprises the following steps:
Step 1, obtaining an N-type silicon wafer, and cleaning and texturing the N-type silicon wafer.
And 2, preparing a front intrinsic amorphous silicon layer and an N-type amorphous silicon layer on one side of the N-type silicon wafer by adopting a PECVD process, wherein the thickness is 25 percent nm.
And 3, preparing a back intrinsic amorphous silicon layer and a P amorphous silicon layer on the other side of the N-type silicon wafer by adopting a PECVD process, wherein the thickness is 20 nm.
And 4, depositing metal oxide ITO on the N-type amorphous silicon layer by adopting a sputtering process to form a front transparent conductive layer, wherein the thickness of the front transparent conductive layer is 10 nm.
And 5, depositing aluminum oxide on the front transparent conductive layer by adopting an ALD (atomic layer deposition) process, forming aluminum oxide with the thickness of about 0.3 nm by three times of cyclic deposition, and then treating 1min in an ultraviolet and ozone environment to obtain an aluminum oxide layer.
Step 6, preparing 2PACz solution, wherein the solvent adopts ethanol and DMF with the volume ratio of 97:3, and the concentration is 0.5 mg/mL. In a nitrogen glove box, the 2PACz solution was first applied to the alumina layer, 30 s followed by spin-coating at 4000 rpm speed for 10 s, then annealing at 100 ℃ for 10 min, rinsing with ethanol, and then annealing again at 100 ℃ for 5min to give a SAM material layer.
Step 7, preparing perovskite precursor solution, adopting DMF and DMSO in a volume ratio of 4:1 as solvents, adding CsI, FAI, pbI 2 and PbBr 2 into the solvents according to Pb concentration of 1.5 and M, adding 60 mg/mL of methyl amine chloride (MACl), and stirring for 6 h. In a nitrogen glove box, a perovskite precursor solution is applied on the SAM material layer, 5s is spin-coated at a rotation speed of 500 rpm, 50 s is spin-coated at a rotation speed of 4000 rpm, 40 s is spin-coated at a rotation speed of 5000 rpm, chlorobenzene is flushed to the surface of the substrate, and then 20 min is annealed at 120 ℃ to prepare a perovskite material FA 0.8Cs0.2Pb(I0.8Br0.2)3, thereby obtaining a perovskite light absorbing layer.
Step 8, preparing 1, 3-propanediamine hydroiodized salt solution, wherein isopropanol is adopted as a solvent, and the concentration is 0.5 mg/mL. In a nitrogen glove box, a1, 3-propanediamine hydroiodidate solution was applied on the above perovskite light absorbing layer, spin-coated at a rotation speed of 4000 rpm for 30 s, and then annealed at 100 ℃ for 2 min to obtain a passivation layer.
And 9, depositing C60 with the thickness of 30 nm on the passivation layer by adopting a thermal evaporation method to obtain a first electron transport layer.
And step 10, depositing SnO 2 with the thickness of 12 nm on the first electron transport layer by adopting a thermal evaporation process to obtain a second electron transport layer.
And 11, preparing silver grid lines on the front surface and the back surface respectively by adopting a thermal evaporation process, wherein the thickness is 400 nm.
And step 12, adopting a thermal evaporation process to deposit MgF 2 with the thickness of 100nm on the front surface to form the antireflection layer.
Example 3
The preparation method of the solar cell provided by the embodiment comprises the following steps:
step 1, obtaining ITO conductive glass with the size of 2.5 cm multiplied by 2.5 cm, cleaning and drying, and then treating 20min in an ultraviolet and ozone environment to obtain a first conductive layer.
And 2, depositing a compact nickel oxide layer on the first conductive layer by adopting a magnetron sputtering process, wherein the thickness of the compact nickel oxide layer is 15 nm.
And 3, depositing aluminum oxide on the nickel oxide layer by adopting an ALD (atomic layer deposition) process, forming aluminum oxide with the thickness of about 0.3 nm by three times of cyclic deposition, and then treating 1 min in an ultraviolet and ozone environment to obtain the aluminum oxide layer.
Step 4, preparing 2PACz solution, wherein the solvent adopts ethanol and DMF with the volume ratio of 97:3, and the concentration is 0.5 mg/mL. In a nitrogen glove box, the 2PACz solution was first applied to the alumina layer, 30 s followed by spin-coating at 4000 rpm speed for 10 s, then annealing at 100 ℃ for 10 min, rinsing with ethanol, and then annealing again at 100 ℃ for 5min to give a SAM material layer.
Step 5, preparing perovskite precursor solution, adopting DMF and DMSO in a volume ratio of 4:1 as solvents, adding CsI, FAI, pbI 2 and PbBr 2 into the solvents according to Pb concentration of 1.5 and M, adding 60 mg/mL of methyl amine chloride (MACl), and stirring for 6 h. In a nitrogen glove box, a perovskite precursor solution is applied on the SAM material layer, 5 s is spin-coated at a rotation speed of 500 rpm, 50 s is spin-coated at a rotation speed of 4000 rpm, 40 s is spin-coated at a rotation speed of 5000 rpm, chlorobenzene is flushed to the surface of the substrate, and then 20 min is annealed at 120 ℃ to prepare a perovskite material FA 0.8Cs0.2Pb(I0.8Br0.2)3, thereby obtaining a perovskite light absorbing layer.
And 6, preparing a1, 3-propanediamine hydroiodidate solution, wherein isopropanol is adopted as a solvent, and the concentration is 0.5 mg/mL. In a nitrogen glove box, a1, 3-propanediamine hydroiodidate solution was applied on the above perovskite light absorbing layer, spin-coated at a rotation speed of 4000 rpm for 30 s, and then annealed at 100 ℃ for 2 min to obtain a passivation layer.
And 7, depositing C60 with the thickness of 30 nm on the passivation layer by adopting a thermal evaporation process to obtain the electron transport layer.
And 8, depositing BCP (2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline) with the thickness of 6 nm on the electron transport layer by adopting a thermal evaporation process to obtain the hole blocking layer.
And 9, depositing metal Ag with the thickness of 200 nm on the hole blocking layer by adopting a thermal evaporation method to obtain a second conductive layer.
Example 4
The procedure for the preparation of the solar cell of this example was substantially the same as in example 3, except that in step 2, the preparation of the nickel oxide layer was as follows:
nickel oxide nanoparticles with particle size smaller than 20 nm are dispersed in deionized water to obtain nickel oxide solution with concentration of 15 mg/mL, 50 mu L of nickel oxide solution is applied to the surface of the first conductive layer after ultrasonic treatment of 10min, spin-coating is carried out on the surface of the first conductive layer at a rotating speed of 3000 r.p.m. for 20 s, and then annealing is carried out at 100 ℃ for 10 min.
Comparative example 1
The production procedure of the solar cell of this comparative example was substantially the same as in example 1, except that step2 was not performed, i.e., an alumina layer was not formed.
Comparative example 2
The procedure for preparing the solar cell of this comparative example was substantially the same as in example 2, except that step 5 was not performed, i.e., an alumina layer was not formed.
Comparative example 3
The production procedure of the solar cell of this comparative example was substantially the same as in example 4, except that step3 was not performed, i.e., an alumina layer was not formed.
And performing performance test on the prepared solar cell. The test was carried out under standard test conditions, i.e. an atmospheric mass of AM 1.5G, an illumination intensity of 100 mW/cm 2 and a temperature of 25 ℃. The solar cell performance test results are shown in table 1.
Table 1 performance parameters of solar cells tested under standard test conditions
The cells were subjected to an aging treatment in an environment of 85 ℃ at 1000 h, and the performance of the aged solar cells was tested, and the test results are shown in table 2.
TABLE 2 Performance parameters of aged solar cells
Examples 1,2 and 4 in comparison with the corresponding comparative examples, an aluminum oxide layer was provided between the first hole transport layer and the first conductive layer. As can be seen from the results in table 1, examples 1,2 and 4 all have improved open circuit voltage, fill factor and photoelectric conversion efficiency compared with the corresponding comparative examples.
As can be seen from the results of table 2, after the aging treatment, the electrical properties of the solar cell were all reduced, one of the reasons is that the self-assembled monolayer as the first hole transport layer was at risk of failure at high temperature for a long period of time, and after the self-assembled monolayer failed, the metal oxide of the lower layer was in contact with the perovskite material to cause oxidation-reduction reaction, and stability of the solar cell was reduced.
In the above embodiment, the alumina layer is disposed between the first hole transport layer and the first conductive layer, so that the alumina is difficult to undergo oxidation-reduction reaction with the perovskite material, and even if the self-assembled monolayer fails, the alumina layer can also serve as a barrier layer to isolate the first conductive layer from contacting with the perovskite material, thereby preventing the oxidation-reduction reaction of the first conductive layer and the perovskite material and reducing the stability of the solar cell.
As can be seen from the results of table 2, examples 1,2 and 4 have a significantly reduced degree of degradation of electrical properties compared with the corresponding comparative examples. For example, after the aging treatment, the short-circuit current drop amplitude of example 1 was 0.05%, the open-circuit voltage drop amplitude was 1.64%, the fill factor drop amplitude was 1.15%, and the photoelectric conversion efficiency drop amplitude was 2.36%. Whereas the short-circuit current drop of comparative example 1 was 2.72%, the open-circuit voltage drop was 4.95%, the fill factor drop was 6.07%, and the photoelectric conversion efficiency drop was 13.16%.
Example 3 in comparison with example 1, a second hole transport layer was further provided between the first conductive layer and the alumina layer, and the hole transport layer was combined with the self-assembled monolayer, so that the hole selective transport effect could be further improved. As can be seen from the test results in table 1 and table 2, the short-circuit current, the open-circuit voltage, the fill factor, and the photoelectric conversion efficiency of example 3 were all improved to some extent as compared with example 1.
As can be seen from the results of Table 2, the electrical properties of examples 3 and 4 were reduced compared with example 1 after the aging treatment. This is because the photo-thermal stability of nickel oxide is due to the self-assembled monolayer, and even after failure of the self-assembled monolayer, nickel oxide can still maintain a good hole transport effect.
As can be seen from the results of Table 2, the electrical properties of comparative example 3 were significantly improved as compared with comparative example 1 after the aging treatment. This is because the reaction of nickel oxide with perovskite material is aggravated without the aluminum oxide layer, resulting in more significant degradation of solar cell performance.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. The scope of the invention is, therefore, indicated by the appended claims, and the description may be intended to interpret the contents of the claims.
Claims (10)
1. A solar cell, comprising:
A first conductive layer;
an alumina layer disposed on the first conductive layer;
the first hole transport layer is arranged on one side, far away from the first conductive layer, of the aluminum oxide layer, and is a self-assembled monolayer;
a perovskite light absorption layer disposed on a side of the first hole transport layer remote from the alumina layer, and
And the second conductive layer is arranged on one side of the perovskite light absorption layer away from the first hole transmission layer.
2. The solar cell of claim 1, wherein the aluminum oxide layer has a thickness of 0.1 nm to 5 nm.
3. The solar cell of claim 1, wherein the solar cell further comprises:
and a second hole transport layer disposed between the first conductive layer and the alumina layer, the second hole transport layer comprising a metal oxide hole transport material.
4. The solar cell of claim 3, wherein the metal oxide hole transport material comprises at least one of doped or undoped NiOw、CuO2、CuO、CuAlO2、CuCrO2、WO3、MoOx、V2O5、VOy、CrOz, wherein w is 1-2, x is 0.5-3, y is 1-2.5, and z is 1-3.
5. The solar cell of claim 3, wherein the solar cell meets one or more of the following features (1) - (3):
(1) The second hole transport layer is of a continuous phase compact structure;
(2) The second hole transport layer is of a nano particle stacking structure;
(3) The thickness of the second hole transport layer is 2 nm-200 nm.
6. The solar cell according to any one of claims 1 to 5, wherein the self-assembled monolayer has functional groups and anchoring groups, the self-assembled monolayer being bonded to the alumina layer via the anchoring groups, the functional groups having dipole moments directed towards the alumina layer.
7. The solar cell according to claim 6, wherein the self-assembled monolayer is selected from at least one of the following general formulas (1) to (3):
(1)、
(2)、
(3);
Wherein R 1、R2、R9、R10 is independently selected from-H, C C4 alkyl, C1-C4 alkoxy, benzene ring or-X, X is halogen atom, R 3、R5、R11 is independently selected from C1-C4 alkyl, R 7、R8 is independently selected from-H, -CH 3、-C2H5;R4、R6、R12 is independently selected from phosphonic acid, carboxylic acid, cyanoacetic acid or cyanophosphonic acid.
8. The solar cell according to any one of claims 1 to 5, 7, wherein the solar cell meets one or more of the following features (1) - (3):
(1) The material of the first conductive layer comprises one or more of indium tin oxide, aluminum-doped zinc oxide, indium-doped zinc oxide, fluorine-doped tin oxide, indium tungsten oxide and indium cerium oxide;
(2) The perovskite light absorption layer comprises a perovskite material ABX 3, wherein A comprises one or more of cesium ions, rubidium ions, potassium ions, methylamine ions, formamidine ions, methylenediamine ions, benzamidine cations and guanidine cations, B comprises one or more of lead ions, copper ions, zinc ions, gallium ions, tin ions and calcium ions, and X comprises one or more of fluoride ions, chloride ions, bromide ions, iodide ions, thiocyanate ions, tetrafluoroborate ions, hexafluorophosphate ions, formate ions and acetate ions;
(3) The material of the second conductive layer includes one or more of Au, ag, and Cu.
9. A method of manufacturing a solar cell, comprising the steps of:
Providing a first conductive layer;
forming an aluminum oxide layer on the first conductive layer;
Forming a first hole transport layer on one side of the aluminum oxide layer far away from the first conductive layer, wherein the first hole transport layer is a self-assembled monolayer;
forming a perovskite light absorption layer on a side of the first hole transport layer away from the alumina layer, and
A second conductive layer is formed on a side of the perovskite light absorbing layer remote from the first hole transporting layer.
10. The method of manufacturing according to claim 9, wherein prior to forming the alumina layer, the method further comprises the steps of:
Forming a second hole transport layer on the first conductive layer, the second hole transport layer comprising a metal oxide hole transport material;
the aluminum oxide layer is formed on a side of the second hole transport layer remote from the first conductive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411235389.8A CN119173053A (en) | 2024-09-04 | 2024-09-04 | Solar cell and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411235389.8A CN119173053A (en) | 2024-09-04 | 2024-09-04 | Solar cell and method for manufacturing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN119173053A true CN119173053A (en) | 2024-12-20 |
Family
ID=93883774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202411235389.8A Pending CN119173053A (en) | 2024-09-04 | 2024-09-04 | Solar cell and method for manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN119173053A (en) |
-
2024
- 2024-09-04 CN CN202411235389.8A patent/CN119173053A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102595057B1 (en) | Mexine-strained hybrid photoconverter | |
| Zhang et al. | Recent progress of carbon‐based inorganic perovskite solar cells: from efficiency to stability | |
| Mahmood et al. | Current status of electron transport layers in perovskite solar cells: materials and properties | |
| AU2014264719B2 (en) | Organic-inorganic perovskite based solar cell | |
| Fan et al. | Delayed annealing treatment for high-quality CuSCN: Exploring its impact on bifacial semitransparent nip planar perovskite solar cells | |
| CN105474421A (en) | High performance perovskite-sensitized mesoscopic solar cells | |
| CN112018100A (en) | Silicon/perovskite laminated solar cell | |
| WO2019210263A1 (en) | Multi-junction photovoltaic cell having wide bandgap oxide conductor between subcells and method of making same | |
| CN107123693A (en) | A kind of efficient CdTe nanometer crystalline solar cell with high transparency window layer material processed based on solwution method and preparation method thereof | |
| GB2566293A (en) | Multi-junction photovoltaic device | |
| WO2023082730A1 (en) | Perovskite solar cell and preparation method therefor | |
| WO2023185464A1 (en) | Perovskite/silicon heterojunction tandem solar cell and production method therefor | |
| CN118475140B (en) | Perovskite battery and preparation method thereof | |
| JP2001168359A (en) | Photoelectric conversion element and photocell | |
| CN209087911U (en) | A kind of perovskite/crystal silicon lamination solar cell | |
| CN114914365A (en) | A perovskite/perovskite tandem solar cell with an inverted structure | |
| WO2023097646A1 (en) | Perovskite solar cell, and photovoltaic assembly | |
| JP2001156314A (en) | Photoelectric conversion element and solar battery | |
| CN113972323A (en) | A kind of high-efficiency and stable perovskite solar cell doped with sodium thiocyanate and preparation method thereof | |
| JP2001185743A (en) | Photoelectric conversion element and solar cell | |
| CN108767112A (en) | BiI with different hole transmission layers3Solar cell and preparation method thereof | |
| CN220023501U (en) | Crystalline silicon/perovskite laminated solar cell | |
| CN114388696B (en) | Light absorption material, preparation method thereof and photovoltaic cell | |
| CN109326718A (en) | A kind of double-buffering layer perovskite method for manufacturing solar battery | |
| CN119173053A (en) | Solar cell and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |