CN119160850A - MEMS infrared light source with double-sided structure, preparation method and packaging device - Google Patents
MEMS infrared light source with double-sided structure, preparation method and packaging device Download PDFInfo
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention discloses an MEMS infrared light source with a double-sided structure, a preparation method and a packaging device, wherein the infrared light source comprises a silicon substrate, a supporting layer, a heating electrode, an isolating layer, a plane electrode and an infrared radiation material layer; the silicon substrate is internally provided with a substrate cavity which penetrates up and down, a supporting layer covers the upper end face and the lower end face of the silicon substrate, an isolation layer covers the outer side face of the supporting layer, the supporting layer and the isolation layer at the two ends of the substrate cavity are suspended to form two suspension islands respectively, the outer side walls of the suspension islands outwards extend to form cantilever beams connected with the side walls of the substrate cavity, the outer side faces of the suspension islands are respectively provided with an infrared radiation material layer, a heating electrode is embedded in the isolation layer in the suspension islands, and the heating electrode is closely attached to the supporting layer. According to the infrared light source, the two suspended islands with the infrared radiation material layers are symmetrically arranged at the two ends of the substrate cavity, the radiation intensity of the light source is improved through the double-sided structure, the integration degree of the infrared light source is enhanced, and the size of a device is reduced.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to an MEMS infrared light source with a double-sided structure, a preparation method and a packaging device.
Background
In recent years, infrared technology has been widely used in the fields of gas detection, industrial process monitoring, medical diagnosis, and the like. In the technical field of infrared detection, the infrared light source performance of the core component is very important, and in general, the higher the infrared radiation power is, the higher the detection precision is. The traditional tungsten lamp, siC ceramic rod and metal foil (wire) infrared light source has been gradually replaced by MEMS (Micro-Electro-MECHANICAL SYSTEM ) infrared light source due to the defects of low efficiency, large volume, low modulation and the like. In general, the MEMS infrared light source is composed of a semiconductor thin film supporting layer and a metal thin film heating layer on a single end surface of a silicon substrate, and has small radiation power, which limits its wide application.
The core component MEMS infrared light source has the advantages of small volume, easy integration, high modulation, low cost and the like, and is researched, developed and prepared in a large amount. Most MEMS infrared light sources at present have low radiation power due to the limitation of a film structure, and are difficult to meet certain high-precision detection application scenes, so that the novel structure MEMS infrared light source is developed, and the radiation intensity is especially necessary to be improved.
In general, the MEMS infrared light source is formed by processing a supporting layer and a heating electrode film on the surface of a silicon-based substrate, and energizing the heating electrode to generate joule heat, thereby emitting infrared radiation energy. In the working process of the MEMS infrared light source, the highest temperature of the film surface is generally about 400-650 ℃, and the ultrahigh temperature can increase the radiation power, but the high-temperature environment is easy to cause the cracking failure of a heating electrode, so that the service life of a light source device is greatly shortened. In addition, the size of the cavity and the heating area of the MEMS infrared light source are smaller, so that the total emergent radiation power is very limited. Although the array structure can be arranged, the cost of the detection equipment is greatly increased, the structure volume is increased, and the integration and the miniaturization of the micro-nano device are not facilitated.
In a similar scheme, CN220604613U discloses an infrared light source with a laminated structure, wherein the infrared light source with the laminated structure comprises a plurality of infrared light emitting components, and the infrared light power density in unit area is increased through the arrangement of the components by adopting graphene as a light emitting layer in a laminated manner. CN111115565A discloses a back-emitting infrared light source, after a supporting layer is disposed on one surface of a monocrystalline silicon wafer, MEMS process etching is performed on the other surface to form a hollowed structure with silicon-based edges and through-etched middle regions, and an infrared heat radiator, an isolation layer and a reflection layer are sequentially disposed on the supporting layer to obtain the back-emitting infrared light source, so that infrared emission efficiency is improved. CN105004694a provides an array type infrared light source device based on MEMS technology and a preparation method thereof, the infrared light source device comprises an infrared light emitting part and a light condensing cover part, and the metal heating area and the high-emissivity material form a plurality of infrared radiation sources together, so that the problems of high packaging cost and large device size are effectively solved.
The improvement and optimization have certain limitations, for example, a graphene luminous layer is easy to oxidize, decompose and fail, and meanwhile, the processing of a light source device cannot be realized through a standard MEMS (micro-electromechanical systems) process, so that the graphene luminous layer is difficult to popularize and use in a large area and at low cost. The back-emitting MEMS infrared light source is based on single-sided emergent radiation, and has very limited improvement on the improvement of radiation power. The array structure can bring about the increase of cost and volume, and can limit the wide application to a great extent. Therefore, the problem that the radiation power of the MEMS infrared light source is smaller is difficult to solve by the prior art method.
Disclosure of Invention
The embodiment of the invention provides a MEMS infrared light source with a double-sided structure, a preparation method and a packaging device, and aims to solve the problem that the MEMS infrared light source in the prior art method has smaller radiation power.
In a first aspect, an embodiment of the present application provides an MEMS infrared light source having a double-sided structure, where the infrared light source includes a silicon substrate, a support layer, a heating electrode, an isolation layer, a planar electrode, and an infrared radiation material layer;
The silicon substrate is internally provided with a substrate cavity which penetrates up and down, the supporting layer is arranged on the upper end face and the lower end face of the silicon substrate in a covering mode, and the isolating layer is arranged on the outer side face of the supporting layer in a covering mode;
The substrate comprises a substrate cavity, a supporting layer, an isolating layer, an infrared radiation material layer, a cantilever beam, a peripheral frame, an infrared radiation material layer, a support layer and an isolating layer, wherein the support layer and the isolating layer are positioned at two ends of the substrate cavity and are suspended to form two suspension islands respectively;
A heating electrode is embedded in the isolation layer in the suspension island, and the heating electrode is closely attached to the supporting layer for setting; the heating electrode penetrates through the cantilever beam and extends to the peripheral frame, and two plane electrodes electrically connected with the heating electrode in the peripheral frame are arranged on two sides of the peripheral frame.
In a second aspect, an embodiment of the present application further provides a method for manufacturing a MEMS infrared light source having a double-sided structure, where the manufacturing method is used for manufacturing the MEMS infrared light source having a double-sided structure according to the first aspect, and the manufacturing method includes:
cleaning the silicon substrate by using a cleaning solution, and then respectively coating films on the upper surface layer and the lower surface layer of the silicon substrate to deposit a supporting layer;
respectively processing heating electrodes on the support layers on the upper side and the lower side of the silicon substrate by adopting a metal magnetron sputtering and stripping processing technology, and carrying out annealing heat treatment;
Adopting a CVD coating process to process the heating electrodes on the upper side and the lower side of the silicon substrate to obtain an isolation layer;
Etching and perforating the isolation layers on the upper side and the lower side of the silicon substrate by adopting plasma dry etching or wet etching, and coating to obtain a planar electrode;
Respectively processing infrared radiation material layers in suspension island areas formed on the upper side and the lower side of the silicon substrate;
Etching peripheral areas of suspension islands on the upper side and the lower side of the silicon substrate to form windows;
And carrying out wet anisotropic etching on the central area of the silicon substrate through the etching window to form a substrate cavity.
In a third aspect, an embodiment of the present application further provides a packaging device, where the packaging device includes the MEMS infrared light source with a double-sided structure according to the first aspect, and the packaging device further includes a base, a gold-plated pad, and a metal wire;
The lower side of each vertex angle in the infrared light source is provided with the gold-plated cushion blocks, the gold-plated cushion blocks are assembled on the upper end face of the base, each plane electrode of the upper end face of the silicon substrate is electrically connected with at least one metal wire respectively, and each gold-plated cushion block is electrically connected with at least one metal wire respectively.
The embodiment of the invention provides an MEMS infrared light source with a double-sided structure, a preparation method and a packaging device, wherein the infrared light source comprises a silicon substrate, a supporting layer, a heating electrode, an isolating layer, a plane electrode and an infrared radiation material layer; the silicon substrate is internally provided with a substrate cavity which penetrates up and down, a supporting layer covers the upper end face and the lower end face of the silicon substrate, an isolation layer covers the outer side face of the supporting layer, the supporting layer and the isolation layer at the two ends of the substrate cavity are suspended to form two suspension islands respectively, the outer side walls of the suspension islands outwards extend to form cantilever beams connected with the side walls of the substrate cavity, the outer side faces of the suspension islands are respectively provided with an infrared radiation material layer, a heating electrode is embedded in the isolation layer in the suspension islands, and the heating electrode is closely attached to the supporting layer. The infrared light source is symmetrically arranged on the horizontal plane in the middle of the silicon substrate, two suspension islands are respectively arranged at two ends of the substrate cavity, an infrared radiation material layer is arranged on the outer side surface of each suspension island, the radiation intensity of the light source is improved through a double-sided structure, the integration degree of the infrared light source is enhanced, and the size of a device is reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a block diagram of an MEMS infrared light source with a double-sided structure according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a cross-sectional structure of a MEMS infrared light source with a dual-sided structure according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a first processing state of a MEMS infrared light source with a dual-sided structure according to an embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating a second processing state of a MEMS infrared light source with a dual-sided structure according to an embodiment of the present invention;
FIG. 5 is a cross-sectional structure diagram of a third processing state of a MEMS infrared light source with a dual-sided structure according to an embodiment of the present invention;
FIG. 6 is a cross-sectional structure diagram of a fourth processing state of a MEMS infrared light source with a dual-sided structure according to an embodiment of the present invention;
FIG. 7 is a schematic diagram illustrating a fifth processing state of a MEMS infrared light source with a dual-sided structure according to an embodiment of the present invention;
FIG. 8 is a schematic diagram illustrating a sixth processing state of a MEMS infrared light source with a dual-sided structure according to an embodiment of the present invention;
FIG. 9 is a flowchart of a method for preparing a MEMS infrared light source with a dual-sided structure according to an embodiment of the present invention;
fig. 10 is a block diagram of a packaged device according to an embodiment of the present invention.
The silicon substrate comprises 1, a silicon substrate, 2, a supporting layer, 3, a heating electrode, 4, an isolation layer, 5, a plane electrode, 6, an infrared radiation material layer, 7, a base, 8, a gold-plated cushion block, 9, a metal wire, 201, a first film layer, 202, a second film layer, 102, a substrate cavity, 101, a window, 103 and a cantilever beam.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be understood that the terms "comprises" and "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should be further understood that the term "and/or" as used in the present specification and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes such combinations.
Referring to fig. 1 to 2, as shown in the drawings, an MEMS infrared light source with a double-sided structure is disclosed, wherein the infrared light source comprises a silicon substrate 1, a supporting layer 2, a heating electrode 3, an isolation layer 4, a planar electrode 5 and an infrared radiation material layer 6, a substrate cavity 102 penetrating up and down is arranged in the silicon substrate 1, the supporting layer 2 is covered on the upper end face and the lower end face of the silicon substrate 1, the isolation layer 4 is covered on the outer side face of the supporting layer 2, the supporting layer 2 and the isolation layer 4 at two ends of the substrate cavity 102 are suspended to form two suspension islands respectively, the outer side walls of the suspension islands outwards extend to form cantilever beams 103 connected with the side walls of the substrate cavity 102, the supporting layer 2 and the isolation layer 4 at the outer side of the substrate cavity 102 are suspended to form a peripheral frame, the infrared radiation material layer 6 is arranged on the outer side face of the suspension islands, the isolation layer 4 in the suspension islands is embedded with the heating electrode 3, the heating electrode 3 is tightly adhered to the supporting layer 2, the heating electrode 3 penetrates through the cantilever beams 103 and extends to the peripheral frame 103, and the two peripheral frames are connected with the two peripheral frames of the two planar electrodes 5.
As shown in fig. 1, the horizontal planes in the middle of the silicon substrate 1 are symmetrically arranged, two suspension islands are respectively arranged at two ends of the substrate cavity 102, an infrared radiation material layer 6 is arranged on the outer side surfaces of the suspension islands, the suspension islands and the infrared radiation material layer 6 arranged on the outer surfaces of the suspension islands are combined into an infrared radiation emission component, and the upper surface and the lower surface of the silicon substrate 1 are respectively provided with an infrared radiation emission component, so that an MEMS infrared light source device with a double-sided structure is formed, and the infrared radiation power is greatly improved. In an embodiment of the present application, each suspension island extends outwards to form four cantilever beams 103, in other embodiments, more than four cantilever beams 103 may be provided, or three cantilever beams 103, two cantilever beams 103, or one cantilever beam 103 may be provided, and the dimensions of the length and width of the cantilever beam 103 may be designed and processed according to actual requirements, which is not specifically limited in the present application. In general, the more the number of the cantilever beams 103 is, the more heat conduction paths are increased, the power consumption of the device is increased, the response time is increased, the modulation frequency and the modulation depth are reduced, but the increase of the number of the cantilever beams 103 has positive assistance to the stability improvement of the light source device, and four cantilever beams 103 can be arranged in a preferred embodiment, so that the two aspects of device characteristics and stability are balanced. The area and pattern of the heat-generating electrode can be set according to the application scene of the product, and are not illustrated here. The larger the heating area is, the higher the risk of high-temperature failure is when the device works, and the service life is short. In general, the silicon substrate 1 may be provided to have a rectangular shape and a size of 1.5X1.5 mm to 3.6X13.6 mm, and the surface area of the suspended island is 0.49 to 4.41mm 2. For example, if the suspended islands are provided as rectangular shapes, the suspended islands may be provided to have a size of 0.7x0.7 mm to 2.1x2.1 mm.
As shown in FIG. 2, the infrared light source comprises a silicon substrate 1, a supporting layer 2, a heating electrode 3, an isolation layer 4, a plane electrode 5 and an infrared radiation material layer 6, wherein a substrate cavity 102 which penetrates up and down is arranged in the silicon substrate 1, the supporting layer 2 is covered on the upper end face and the lower end face of the silicon substrate 1, and the isolation layer 4 is covered on the outer side face of the supporting layer 2. The support layer 2 may be a multi-layer film, for example, the support layer 2 may be composed of a first film layer 201 and a second film layer 202, where the first film layer 201 is a SiO 2 layer, and the second film layer 202 is SiN x.
The support layer 2 and the isolation layer 4 at two ends of the substrate cavity 102 are suspended to form two suspension islands respectively, the outer side walls of the suspension islands extend outwards to form cantilever beams 103 connected with the side walls of the substrate cavity 102, the support layer 2 and the isolation layer 4 at the outer side of the substrate cavity 102 are suspended to form a peripheral frame, the outer side faces of the suspension islands are provided with infrared radiation material layers 6, the isolation layer 4 in the suspension islands is embedded with heating electrodes 3, the heating electrodes 3 are closely attached to the support layer 2, the heating electrodes 3 penetrate through the cantilever beams 103 and extend to the peripheral frame, and two plane electrodes 5 electrically connected with the heating electrodes 3 in the peripheral frame are arranged at two sides of the peripheral frame. The planar electrode 5 is connected with the heating electrode 3 through etching holes on the isolation layer 4. Two infrared radiation emitting components are formed on the upper and lower surfaces of the silicon substrate 1, respectively. The window 101 formed by etching the upper and lower surfaces of the silicon substrate 1 is further processed by adopting a frontal wet anisotropic etching process to obtain a substrate cavity 102, so that the MEMS infrared light source with a double-sided structural design is formed, and the infrared radiation power is greatly improved.
In a more specific embodiment, the suspension islands are circular, rectangular or triangular suspension islands, the number of the cantilever beams 103 is one or more, the substrate cavity 102 is in an inverted trapezoid structure which is symmetrical up and down, and the sizes of two ends of the substrate cavity 102 are larger than the size of the middle section of the substrate cavity 102. Specifically, the heating electrodes 3 are embedded in the suspension islands, the heating electrodes 3 are formed by coiling spiral heating wires, or the heating electrodes 3 are planar film electrodes.
The suspension islands can be arranged to be circular suspension islands, so that the heating uniformity of the infrared radiation emitting components corresponding to the suspension islands is improved. Further, the heating electrode 3 which is embedded in the suspending island can be provided as a spiral heating wire, the appearance structure of the spiral heating wire is matched with that of the circular suspending island, and the heating electrode 3 can be uniformly paved in the circular suspending island, so that the heating uniformity of the infrared radiation emitting component corresponding to the suspending island is further improved, and the infrared radiation uniformity and the application effect of the device are improved. In a more specific embodiment, the silicon substrate is a monocrystalline silicon substrate or a silicon-on-insulator substrate. The support layer is a single-layer SiO 2, a single-layer Si 3N4 or a single-layer SiN x, or a composite film layer formed by combining at least two layers of SiO 2、Si3N4 and SiN x.
Specifically, the silicon substrate 1 may be a monocrystalline silicon substrate or a silicon-on-insulator (SOI silicon wafer) substrate, and the supporting layer 2 may be a single-layer SiO 2, a single-layer Si 3N4 or a single-layer SiN x, or a composite film layer formed by at least two layers of SiO 2、Si3N4 and SiN x. In one embodiment of the present application, a composite film layer of the support layer 2, which is composed of a first film layer 201 and a second film layer 202, is provided, wherein the first film layer 201 is a SiO 2 layer, the second film layer 202 is SiN x, and the first film layer 201 is disposed in close contact with the surface of the silicon substrate 1.
In more specific embodiments, the heating electrode 3 is a metal composite film layer formed by one or more of Pt, au, W, al, tiN, nichrome, moSi 2, or the heating electrode 3 is a doped polysilicon film. Specifically, the isolation layer 4 is a single-layer SiO 2, a single-layer Si 3N4 or a single-layer SiN x, or the isolation layer 4 is a composite film layer formed by combining at least two layers of SiO 2、Si3N4 and SiN x.
The heating electrode 3 can be a metal composite film layer formed by one or more of Pt, au, W, al, tiN, nichrome and MoSi2, and a doped polycrystalline silicon film can also be adopted. The isolation layer can be a single layer of SiO 2, a single layer of Si 3N4 or a single layer of SiN x, or the isolation layer 4 can be a composite film layer formed by at least two layers of SiO 2、Si3N4 and SiN x.
In a more specific embodiment, the planar electrode 5 is a Pt metal film layer, an Au metal film layer, or an Al metal film layer. The infrared radiation material layer 6 is one of nano platinum black, nano black silicon, carbon nano tube, graphene and amorphous carbon film doped with metal elements, or Au/Al 2O3/Au super surface material, or ZnNiP chemical plating.
Wherein, the plane electrode 5 can be a Pt metal film layer, an Au metal film layer or an Al metal film layer, and the infrared radiation material layer 6 is one of nano platinum black, nano black silicon, carbon nano tube, graphene and an amorphous carbon film doped with metal elements, or an Au/Al 2O3/Au super-surface material, or ZnNiP chemical plating.
The embodiment of the invention also provides a preparation method of the MEMS infrared light source with the double-sided structure, which can be used for manufacturing the MEMS infrared light source with the double-sided structure in the embodiment, as shown in FIG. 9, and comprises the steps S1-S7.
S1, cleaning the silicon substrate by using a cleaning solution, and then respectively coating films on the upper surface layer and the lower surface layer of the silicon substrate to deposit a supporting layer.
As shown in fig. 3, a silicon substrate 1 is first prepared, wherein the silicon substrate 1 may be a monocrystalline silicon substrate or an SOI silicon substrate, and the silicon substrate needs to be cleaned by a cleaning solution such as ammonia water/hydrogen peroxide, hydrochloric acid/hydrogen peroxide, acetone, deionized water, etc. before being coated with a film. After cleaning the silicon substrate 1, a supporting layer 2 can be deposited on the silicon substrate 1, wherein the supporting layer 2 is a single-layer SiO 2, The single-layer Si 3N4 or the single-layer SiN x or the support layer 2 is a composite film layer formed by combining at least two layers of SiO 2、Si3N4 and SiN x. Typically, siO 2 has a tensile stress and low thermal conductivity, and Si 3N4 or SiN x has a compressive stress and low thermal expansion. The invention adopts a two-layer composite film structure composed of SiO 2 and SiN x, so that the stress adaptation, high thermal stability and low heat loss are realized, and the total thickness of the two-layer composite film structure is controlled to be 1.1-3.6 mu m. and (3) performing 600-2000nm SiO 2 film processing on the upper and lower surfaces of the silicon substrate 1 by using a thermal oxygen film coating process, wherein the oxygen flow is controlled to be 3-5L/min, and the reaction temperature is about 1100 ℃. Then, processing 500-1600nm SiN x film layers on the upper surface and the lower surface of the silicon substrate 1 by using an LPCVD film coating process, wherein the volume flow ratio of the reaction gases SiH 2Cl2 to NH 3 is 1:3-1:4, the reaction temperature is about 800 ℃, the chamber pressure is 300mTorr, and the SiN x film forming rate is 3-6 nm/min.
And S2, respectively processing heating electrodes on the supporting layers on the upper side and the lower side of the silicon substrate by adopting a metal magnetron sputtering and stripping processing technology, and carrying out annealing heat treatment.
As shown in fig. 4, heating electrodes 3 are respectively processed on the supporting layers 2 on the upper and lower surfaces of the silicon substrate 1, wherein the heating electrodes 3 can be one or more metal composite film layers of Pt, au, W, al, tiN, nichrome and MoSi, and doped polysilicon (Poly-Si) films can also be adopted. The invention adopts a metal magnetron sputtering and stripping (lift-off) process to process and obtain the Pt film as the heating electrode 3. Firstly, cleaning a silicon substrate 1 with a supporting layer 2, spraying tackifier Hexamethyldisilimide (HDMS), increasing the adhesion between photoresist and a semiconductor film, spin-coating negative photoresist with the thickness of 1-3 mu m, and performing the procedures of pre-baking, exposure, development, post-baking and the like. Then, a layer of Ti, cr or Ni metal film with the thickness of 10-50nm is sputtered firstly to increase the binding force between the heating electrode 3 and the supporting layer 2, and then, a Pt film with the thickness of 200-500nm is processed. The metal magnetron sputtering power is 100-200W, the chamber pressure is about 3.0mTorr, the Ar gas flow is 50-100sccm, and the Pt film forming rate is 5-10nm/min. Stripping glue and ultrasonic cleaning are carried out by adopting acetone solution and alcohol, and in order to improve the stability of the heating electrode 3, rapid annealing heat treatment is carried out at 400-600 ℃ for 2-10min.
S3, adopting a CVD (chemical vapor deposition ) film coating process to process on the heating electrodes on the upper side and the lower side of the silicon substrate to obtain the isolation layer.
As shown in fig. 5, an isolation layer 4 is processed on the heating electrode 3 on the upper and lower surfaces of the silicon substrate 1, wherein the isolation layer 4 is a single layer SiO 2, a single layer Si 3N4 or a single layer SiN x, or the isolation layer 4 is a composite film layer formed by combining at least two layers of SiO 2、Si3N4 and SiN x. The invention adopts PECVD plating technology to process SiO 2 isolation layer 4 with 400-800nm thickness, the flow rate of SiH 4/N2 in the reaction gas is 100-200sccm, the flow rate of N 2 O is 600-800sccm, the cavity pressure is 800-900mTorr, the reaction temperature is 250-350 ℃, the Radio Frequency (RF) power is 15-25W, and the deposition rate of SiO 2 isolation layer 4 is 50-70nm/min.
And S4, etching and perforating the isolation layers on the upper side and the lower side of the silicon substrate by adopting plasma dry etching or wet etching, and coating to obtain the planar electrode.
As shown in fig. 6, the film layers of the isolation layer 4 on the upper and lower surfaces of the silicon substrate 1 are etched and perforated, and then coated with a film to obtain a planar electrode 5 (Pad electrode). The etching of the holes can be performed by adopting a plasma dry etching process or a mixed solution wet etching process of HF and H 2O2. The planar electrode 5 can be an electrode formed by a Pt metal film layer, an Au metal film layer or an Al metal film layer, and the Pt metal film layer, the Au metal film layer or the Al metal film layer is prepared by adopting metal magnetron sputtering and lift-off process processing. The invention adopts a plasma dry etching process to etch and open holes on the SiO 2 isolation layer 4, uses 1-5 mu m photoresist as a dry etching mask, and respectively uses the flows of CF 4 and CHF 3 in etching gas of 10-20sccm, 30-40sccm, ar flow of 200-300sccm, chamber pressure of 200-300mTorr, RF power of 400-500W and etching rate of 400-800nm/min of the SiO 2 isolation layer 4. Then the sample is processed by re-gluing, photoetching, developing and other processing procedures, then a metal magnetic control film plating process is adopted to process a Pt metal film layer with the thickness of 400-800nm, so that the planar electrode 5 is obtained, and in order to increase the binding force between the planar electrode 5 and the heating electrode 3 at the bottom layer, an ultrathin Ti film layer, a Cr film layer or a Ni film layer with the thickness of 10-50nm and the like can be introduced between the planar electrode 5 and the heating electrode 3 as an intermediate film layer. Finally, stripping glue is performed, and the processing steps are similar to the steps of processing the heating electrode 3, and are not repeated here.
S5, respectively processing infrared radiation material layers in suspension island areas formed on the upper side and the lower side of the silicon substrate.
As shown in fig. 7, the processing of the infrared radiation material layer 6 is performed on the isolation layer 4 corresponding to the suspended island region on the upper and lower surfaces of the silicon substrate 1, and the infrared radiation material layer 6 has a special micro-nano structure and high infrared radiation rate, and can be one of nano platinum black, nano black silicon, carbon nano tubes, graphene and amorphous carbon films doped with metal elements, or an Au/Al 2O3/Au super-surface material, or a ZnNiP electroless plating layer. The present invention utilizes an in situ growth strategy and a photolithographic process to prepare vertical carbon nanotubes as the layer 6 of infrared radiation material. Firstly, using photoresist as a mask, and then using a magnetron sputtering device to sequentially process a Ti layer of 10nm, a TiN layer of 50nm and a Fe metal film of 5-10 nm. Wherein, the Ti layer and the TiN layer prevent the Fe from migration and diffusion at high temperature, and the Fe nano particles are key catalysts for the growth of the vertical carbon nano tube material. In acetone solution, stripping glue is carried out, and the processing steps are similar to those of the method, and are not repeated here. Then, 500-1000sccm H 2 and 30-80sccm C 2H2 are introduced into the reaction chamber, the pressure is 50-100 mbar, the temperature is 500-700 ℃ and the reaction time is 8-10min, and after the reaction is completed, the reaction chamber is cooled in N 2 atmosphere, so that the vertical carbon nano tube with the thickness of 10-120 μm is obtained as the infrared radiation material layer 6.
S6, etching surrounding areas of the suspension islands on the upper side and the lower side of the silicon substrate to form windows.
As shown in fig. 8, the isolation layer 4 and the support layer 2 on the upper and lower surfaces of the silicon substrate 1 in the peripheral area of the floating island are etched to form a window 101, and the invention adopts a plasma dry etching process to process, so as to ensure the side wall of the window 101 obtained by etching to be highly flat. In order to protect other non-etched area structures from damage, a 5-10 μm thick photoresist is used as a mask. The etching process of the SiO 2 film layer in the isolation layer 4 and the support layer 2 is the same as the method, but the etching time is adjusted. The SiN x film layer in the supporting layer 2 is etched by adopting a plasma dry method, the flow rates of etching gas SF 6 and CHF 3 are respectively 20-40sccm and 5-10sccm, the flow rate of He is 50-200sccm, the chamber pressure is 300-500mTorr, the RF power is 300-500W, and the etching rate of SiN x is 100-200nm/min.
And S7, carrying out wet anisotropic etching on the central area of the silicon substrate through the etching window to form a substrate cavity.
The etching window is used for carrying out wet anisotropic etching in the central area of the silicon substrate 1, and two sides of the silicon substrate can be etched simultaneously, so that an upper symmetrical trapezoidal cavity and a lower symmetrical trapezoidal cavity are formed to be combined into a substrate cavity 102, a suspension island supported by a cantilever beam is respectively formed on the upper surface and the lower surface of the silicon substrate 1, and the planar electrode 5 is positioned in a non-suspension area (peripheral frame) so as to facilitate the wire bonding welding operation of a subsequent light source. The invention adopts TMAH solution to anisotropically etch the silicon substrate 1 to form the substrate cavity 102, and can also select silicon-based wet etching liquid such as KOH or EDP. And (3) etching by using a TMAH solution with the concentration of 25%, and adding a condensing reflux device to prevent the volatilization of the corrosive liquid. The heating temperature is 80-90 ℃, the etching speed is 0.5-1.0 mu m/min, and the etching is finished and the cleaning is carried out by clean water, so that the infrared light source shown in the figures 1 and 2 is obtained, namely the processing operation of the infrared light source is finished.
The preparation method is based on a double-sided wet anisotropic etching process, and the processed MEMS infrared light source can improve the integration degree of the device, reduce the volume and reduce the processing and manufacturing cost.
The embodiment of the application also discloses a packaging device, wherein the packaging device comprises the MEMS infrared light source with the double-sided structure, a base, a gold-plated cushion block and metal wires, wherein the gold-plated cushion block is arranged on the lower side of each vertex angle in the infrared light source, the gold-plated cushion blocks are assembled on the upper end face of the base, each plane electrode on the upper end face of the silicon substrate is electrically connected with at least one metal wire, and each gold-plated cushion block is electrically connected with at least one metal wire.
Specifically, as shown in fig. 10, the package device comprises four gold-plated pads 8 formed by plating gold on the surfaces, wherein the thickness of each gold-plated pad 8 is 100-300 μm, and four corners of an infrared light source chip are supported by the four gold-plated pads 8 and fixed on a base 7. The plane electrode 5 in the infrared radiation emitting component on the lower surface of the silicon substrate 1 is contacted and fixed with the gold-plated cushion block, then the gold-plated cushion block is connected by using the metal wire 9, and the metal wire 9 is welded with pins on the base 7 to form a passage. The planar electrode 5 in the infrared radiation emitting component on the upper surface of the silicon substrate 1 is directly soldered with pins on the base 7 by one or more metal wires 9 to form a via.
According to the MEMS infrared light source with the double-sided structure design, the infrared radiation emitting assemblies are arranged on the upper surface and the lower surface of the silicon substrate 1, so that the radiation power of the infrared light source is greatly improved, and the application requirements of high-precision infrared detection are met. Meanwhile, suspension island structures supported by cantilever beams are arranged on the upper surface and the lower surface of the silicon substrate 1, so that the power consumption of the whole heating film is greatly reduced, the response of a light source is quickened, and the modulation frequency and the modulation depth of the light source are improved. Each suspension island is supported by one or more cantilever beams, so that the long-term reliable operation of the light source chip is ensured.
The embodiment of the invention provides an MEMS infrared light source with a double-sided structure, a preparation method and a packaging device, wherein the infrared light source comprises a silicon substrate, a supporting layer, a heating electrode, an isolating layer, a plane electrode and an infrared radiation material layer; the silicon substrate is internally provided with a substrate cavity which penetrates up and down, a supporting layer covers the upper end face and the lower end face of the silicon substrate, an isolation layer covers the outer side face of the supporting layer, the supporting layer and the isolation layer at the two ends of the substrate cavity are suspended to form two suspension islands respectively, the outer side walls of the suspension islands outwards extend to form cantilever beams connected with the side walls of the substrate cavity, the outer side faces of the suspension islands are respectively provided with an infrared radiation material layer, a heating electrode is embedded in the isolation layer in the suspension islands, and the heating electrode is closely attached to the supporting layer. The infrared light source is symmetrically arranged on the horizontal plane in the middle of the silicon substrate, two suspension islands are respectively arranged at two ends of the substrate cavity, an infrared radiation material layer is arranged on the outer side surface of each suspension island, the radiation intensity of the light source is improved through a double-sided structure, the integration degree of the infrared light source is enhanced, and the size of a device is reduced.
While the invention has been described with reference to certain preferred embodiments, it will be understood by those skilled in the art that various changes and substitutions of equivalents may be made and equivalents will be apparent to those skilled in the art without departing from the scope of the invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
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