CN119159502A - Thickness-compensated eddy current detection method, device and storage medium - Google Patents
Thickness-compensated eddy current detection method, device and storage medium Download PDFInfo
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- CN119159502A CN119159502A CN202411628959.XA CN202411628959A CN119159502A CN 119159502 A CN119159502 A CN 119159502A CN 202411628959 A CN202411628959 A CN 202411628959A CN 119159502 A CN119159502 A CN 119159502A
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- 230000006698 induction Effects 0.000 claims abstract description 112
- 238000000034 method Methods 0.000 claims abstract description 39
- 239000000126 substance Substances 0.000 claims abstract description 31
- 238000013507 mapping Methods 0.000 claims description 95
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- 238000006243 chemical reaction Methods 0.000 claims description 25
- 238000004891 communication Methods 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 14
- 238000005259 measurement Methods 0.000 claims description 10
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- 238000004590 computer program Methods 0.000 claims description 5
- 238000012937 correction Methods 0.000 claims description 5
- 238000012360 testing method Methods 0.000 claims description 5
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- 230000006870 function Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
- G01B7/10—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
- B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The application provides a thickness-compensated eddy current detection method, device equipment and storage medium, which are applied to chemical mechanical polishing equipment, wherein the method comprises the steps of acquiring a first induction signal of an eddy current sensor when a wafer runs to a detection area of the eddy current sensor, wherein the eddy current sensor is arranged in a polishing disc included in the chemical mechanical polishing equipment, and a polishing pad for polishing a metal layer on the wafer is arranged on the top surface of the polishing disc; the method comprises the steps of acquiring a second sensing signal of an eddy current sensor when a finishing head included in chemical mechanical polishing equipment sweeps over a detection area, determining a first thickness value of an area, opposite to the eddy current sensor, on a polishing pad according to the second sensing signal, and determining the thickness of a metal layer on a wafer according to the first sensing signal and the first thickness value. The thickness compensation eddy current detection method provided by the application can improve the detection precision of the thickness of the metal layer on the wafer.
Description
Technical Field
The present application relates to the field of semiconductor manufacturing technologies, and in particular, to a thickness compensated eddy current testing method, apparatus and storage medium.
Background
Integrated circuits (INTEGRATED CIRCUIT, ICs) are the core and proposition of the development of the information technology industry. Integrated circuits are typically formed by sequentially depositing conductive, semiconductive, or insulative layers on a silicon wafer. Thereby depositing a film formed by the filler layer on the surface of the wafer. In the fabrication process, it is necessary to continuously planarize the filler layer until the patterned top surface is exposed to form conductive paths between the bump patterns.
Chemical Mechanical Polishing (CMP) technology is the first planarization process in the IC fabrication process. In chemical mechanical polishing, excessive or insufficient material removal can result in degradation or even failure of the device electrical properties for the semiconductor device manufacturing process. In order to improve the controllability of the chemical mechanical polishing process, improve the stability of the product, reduce the defect rate of the product, and enable each wafer to achieve uniform production, the endpoint detection technology (Endpoint Detection, EPD) of chemical mechanical polishing is developed.
In metal CMP endpoint detection, the eddy current detection is the most commonly used method, and the output sensing signal is a voltage signal, and the magnitude of the voltage signal is verified by experiments to be related to the thickness of the metal layer of the wafer to be detected, and also related to the Distance between the eddy current sensor and the metal layer to be detected, wherein the Distance is called the Lift-off Distance (Lift-off) of the sensor, and is related to the thickness of the polishing pad in the chemical mechanical polishing equipment, and the correspondence between the thickness of the metal layer and the voltage value is different under different Lift-off heights. In actual processing, the polishing pad is arranged between the sensor and the polished wafer, so that the thickness of the polishing pad is the lifting height, the thickness of the polishing pad becomes thinner along with the processing, namely the lifting height becomes smaller, at the moment, the corresponding relation between the voltage value and the thickness of the metal layer changes, the measurement error becomes larger, and the polishing effect is affected.
Disclosure of Invention
In view of the above, the present application provides a thickness-compensated eddy current inspection method, apparatus device and storage medium to at least partially solve the above-mentioned problems.
According to a first aspect of the application, an eddy current detection method for thickness compensation is provided, and the eddy current detection method is applied to chemical mechanical polishing equipment, and comprises the steps of acquiring a first sensing signal of an eddy current sensor when a wafer moves to a detection area of the eddy current sensor, wherein the eddy current sensor is arranged in a polishing disc included in the chemical mechanical polishing equipment, a polishing pad used for polishing a metal layer on the wafer is arranged on the top surface of the polishing disc, acquiring a second sensing signal of the eddy current sensor when a trimming head included in the chemical mechanical polishing equipment sweeps across the detection area, determining a first thickness value of an area, opposite to the eddy current sensor, on the polishing pad according to the second sensing signal, and determining the thickness of the metal layer on the wafer according to the first sensing signal and the first thickness value.
According to a second aspect of the application, a chemical mechanical polishing device is provided, comprising a polishing disk, a polishing pad, a dressing head, a carrying head, a liquid supply module and a control module, wherein the carrying head is used for carrying a wafer so as to enable the wafer to abut against the polishing pad, the polishing disk comprises an eddy current sensor, the eddy current sensor is arranged in the polishing disk, the top surface of the polishing disk is provided with the polishing pad used for polishing a metal layer on the wafer, the liquid supply module is used for supplying polishing liquid between the wafer and the polishing pad, the dressing head is used for dressing the polishing pad, the control module is used for acquiring a first sensing signal of the eddy current sensor when the wafer moves to a detection area of the eddy current sensor, acquiring a second sensing signal of the eddy current sensor when the dressing head sweeps across the detection area, and determining a first thickness value of the area opposite to the eddy current sensor on the polishing pad according to the second sensing signal.
According to a third aspect of the application, an eddy current detection device based on polishing pad thickness compensation is provided, and the eddy current detection device comprises a sensing signal acquisition module, a first thickness value determination module and a metal layer thickness determination module, wherein the sensing signal acquisition module is used for acquiring a first sensing signal of an eddy current sensor when a wafer moves to a detection area of the eddy current sensor, the eddy current sensor is arranged in a polishing disc included in chemical mechanical polishing equipment, a polishing pad used for polishing a metal layer on the wafer is arranged on the top surface of the polishing disc, the second sensing signal of the eddy current sensor is acquired when a trimming head included in the chemical mechanical polishing equipment sweeps across the detection area, the first thickness value determination module is used for determining a first thickness value of an area, opposite to the eddy current sensor, of the polishing pad according to the first sensing signal and the first thickness value, and the metal layer thickness determination module is used for determining the thickness of the metal layer on the wafer according to the first sensing signal and the first thickness value.
According to a fourth aspect of the present application, there is provided an electronic device comprising a processor, a memory, a communication interface and a communication bus, the processor, the memory and the communication interface completing communication with each other via the communication bus, the memory being configured to store at least one executable instruction, the executable instruction causing the processor to perform operations corresponding to the method according to the first aspect.
According to a fifth aspect of the present application there is provided a computer storage medium having stored thereon a computer program which when executed by a processor implements a method as described in the first aspect.
According to a sixth aspect of the present application there is provided a computer program product comprising computer instructions for instructing a computing device to execute the method as described in the first aspect.
According to the thickness-compensated eddy current testing method provided by the application, when a wafer moves to a detection area of an eddy current sensor, a first induction signal of the eddy current sensor is obtained, and when a trimming head sweeps across the detection area, a second induction signal of the eddy current sensor is obtained, and a first thickness of an area, opposite to the eddy current sensor, on a polishing pad is determined according to the second induction signal, so that the thickness of a metal layer on the wafer can be determined according to the first thickness and the first induction signal, because the thickness of the polishing pad, namely the lifting height of the wafer is considered when the thickness of the metal layer is determined, compared with the prior art without considering the lifting height, because the influence of the lift-off height on the induction signal generated by the eddy current sensor is considered, the thickness of the detected metal layer on the wafer is more accurate, and because the thickness of the polishing pad is detected according to the eddy current sensor arranged on the polishing disk, the additional eddy current sensor is not required to be arranged on the trimming head, the eddy current sensor can be prevented from being damaged by polishing liquid, and because the detected area is the thickness of the area opposite to the eddy current sensor, compared with the average thickness of the detected polishing pad, the lift-off height of the detected wafer is more accurate, and the thickness of the metal layer on the wafer is more accurate.
Drawings
In order to more clearly illustrate the application or the technical solutions of the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained according to these drawings for a person skilled in the art.
FIG. 1 is a flow chart of a thickness compensated eddy current inspection method provided by the present application;
FIG. 2 is a schematic diagram of a chemical mechanical polishing process performed on a wafer according to the present application;
FIG. 3 is a schematic illustration of a conditioning head conditioning polishing pad provided by the present application;
FIG. 4 is a schematic diagram of a mapping relationship provided by the present application;
FIG. 5 is a schematic illustration of a detection zone provided by the present application;
FIG. 6 is a schematic view of a chemical mechanical polishing apparatus provided by the present application;
fig. 7 is a schematic structural diagram of an electronic device according to the present application.
200. Chemical mechanical polishing equipment, 201, a polishing pad, 202, a conditioning head, 203, a polishing disk, 2031, an eddy current sensor, 204, a carrier head, 205, a liquid supply module, 206, a control module, 300, a wafer, 400, an annular area, 702, a processor, 704, a communication interface, 706, a memory, 708, a communication bus, 710, and a program.
Detailed Description
In order that the manner in which the above-recited embodiments of the present application are attained and can be readily understood in light of the above-recited drawings, a more particular description of the application will be rendered by reference to specific embodiments thereof which are appended drawings. All other embodiments, which are derived by a person skilled in the art based on the embodiments of the application, shall fall within the scope of protection of the application.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any or all possible combinations of one or more of the associated listed items.
It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, these information should not be limited by these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope of the application. The term "if" as used herein may be interpreted as "at..once" or "when..once" or "in response to a determination", depending on the context.
The thickness-compensated eddy current testing method provided by the application is described below by specific examples:
Fig. 1 is a flowchart of a thickness-compensated eddy current testing method according to the present application, which is applied to a chemical mechanical polishing apparatus, as shown in fig. 1, and includes the following steps 101 to 104:
step 101, when a wafer moves to a detection area of the eddy current sensor, a first sensing signal of the eddy current sensor is obtained.
The eddy current sensor is disposed in a polishing disk included in the cmp apparatus, a polishing pad for polishing a metal layer on a wafer is disposed on a top surface of the polishing disk, fig. 2 is a schematic diagram of a cmp process performed on a wafer 300 according to the present application, and as shown in fig. 2, when the cmp apparatus polishes the wafer 300, a body of the cmp apparatus rotates, the wafer 300 rotates under the action of a carrier head and moves radially along the polishing disk of the cmp apparatus, thereby performing cmp on the wafer 300 through the polishing pad 201, and since the eddy current sensor is disposed in the polishing disk included in the cmp apparatus, the polishing pad 201 is disposed on the top surface of the polishing disk, and the wafer 300 moves radially along the polishing pad 201 of the cmp apparatus, a first sensing signal of the eddy current sensor is acquired when the wafer 300 moves to a detection area of the eddy current sensor. It should be noted that a layer of metal material, such as copper, tungsten, aluminum, tantalum, titanium, etc., is present on the surface of the wafer 300. The metal layer thickness of wafer 300 may be 0.01 μm to 50 μm.
It should be noted that, when the detection principle of the eddy current sensor is that the wafer moves to the detection area of the eddy current sensor, the metal layer on the surface of the wafer generates an eddy current effect to change the magnetic field generated by the eddy current sensor, so that the thickness of the metal layer is measured according to the change of the magnetic field.
Step 102, acquiring a second sensing signal of the eddy current sensor when a finishing head included in the chemical mechanical polishing equipment sweeps across the detection area.
In chemical mechanical polishing of a wafer, the polishing pad is required to be polished in real time by a polishing head, which in one example polishes the wafer on the left half of the polishing pad, and the polishing head trims the polishing pad on the right half of the polishing pad, and a second sensing signal of the eddy current sensor is acquired when the polishing head sweeps over the detection area, and the eddy current sensor can detect the metal inside the polishing head due to the metal inside the polishing head, so that the second sensing signal can be generated.
Step 103, determining a first thickness value of the area, opposite to the eddy current sensor, of the polishing pad according to the second sensing signal.
The distance between the eddy current sensor and the dressing head is determined according to the second sensing signal generated by the eddy current sensor, and it is understood that the distance between the eddy current sensor and the dressing head is the first thickness value of the area of the polishing pad opposite to the eddy current sensor because the dressing head dresses the polishing pad, the polishing pad is arranged on the polishing disc, and the eddy current sensor is arranged in the polishing disc.
It should be appreciated that since the eddy current sensor acquires the second sensed signal as the conditioner head included in the chemical mechanical polishing apparatus is swept across the detection zone and determines the first thickness value of the zone opposite the eddy current sensor based on the second sensed signal, the zone of the polishing pad opposite the eddy current sensor is at least partially within the detection zone. The radius and angle at which the detection zone is located on the polishing pad can be predetermined.
Step 104, determining the thickness of the metal layer on the wafer according to the first sensing signal and the first thickness value.
The thickness of the metal layer on the wafer is determined according to the first sensing signal and the first thickness value, and in an example, a mapping relationship between the sensing signal and the thickness of the metal layer may be determined according to the first thickness value, and the thickness of the metal layer on the wafer may be determined according to the mapping relationship and the first sensing signal.
In the application, when the wafer moves to the detection area of the eddy current sensor, the first induction signal of the eddy current sensor is acquired, and when the trimming head sweeps across the detection area, the second induction signal of the eddy current sensor is acquired, and the first thickness of the area opposite to the eddy current sensor on the polishing pad is determined according to the second induction signal, so that the thickness of the metal layer on the wafer can be determined according to the first thickness and the first induction signal, and because the thickness of the polishing pad, namely the lifting height of the wafer, is considered when the thickness of the metal layer is determined, compared with the prior art, the lifting height is not considered, because the influence of the lift-off height on the induction signal generated by the eddy current sensor is considered, the thickness of the detected metal layer on the wafer is more accurate, and because the thickness of the polishing pad is detected according to the eddy current sensor arranged on the polishing disk, the additional eddy current sensor is not required to be arranged on the trimming head, the cost is saved, the eddy current sensor can be prevented from being damaged by polishing liquid, and the thickness detection area is the thickness of the area, opposite to the eddy current sensor, of the polishing pad, compared with the average thickness of the detected polishing pad, the lift-off height of the detected wafer is more accurate, and the thickness of the metal layer on the wafer is determined more accurately.
In one possible implementation, when determining the first thickness value of the area of the polishing pad opposite to the eddy current sensor according to the second sensing signal, a positional relationship between a dressing surface of the dressing head, which is in contact with the polishing pad, and a metal flange in the dressing head may be obtained, the dressing surface being used for dressing the polishing pad, determining the distance between the eddy current sensor and the metal flange according to the second sensing signal, and determining the first thickness value according to the distance between the eddy current sensor and the metal flange and the positional relationship.
In one example, fig. 3 is a schematic view of a conditioning head conditioning a polishing pad provided by the present application, as shown in fig. 3, the conditioning head 202 conditioning the polishing pad 201 via a conditioning surface in contact with the polishing pad 201.
And acquiring the position relationship between the finishing surface and the metal flange on the finishing head, wherein the position relationship is a fixed relationship which does not change along with the rotation of the polishing pad and the movement of the finishing head, and the position relationship between the finishing surface and the metal flange on the finishing head is a fixed attribute when the finishing head is manufactured.
The distance between the eddy current sensor and the metal flange of the trimming head is determined according to the signal intensity of the second induction signal, and it is understood that the eddy current sensor and the metal flange in the trimming head generate an eddy current effect to change the magnetic field generated by the eddy current sensor, and the distance between the eddy current sensor and the metal flange can be determined according to the change of the magnetic field, namely the second induction signal.
According to the distance between the eddy current sensor and the metal flange and the position relation between the trimming surface and the metal flange on the trimming head, determining the first thickness of the area, opposite to the eddy current sensor, on the trimming pad, specifically, sequentially arranging the eddy current sensor, the trimming pad, the trimming surface in contact with the trimming pad and the metal flange according to the sequence from the eddy current sensor on the trimming disc to the metal flange, so that the position relation between the trimming surface and the metal flange is known, and after the relation between the eddy current sensor and the metal flange is known, the first thickness of the area, opposite to the eddy current sensor, on the trimming pad is known.
It should be noted that, the distance between the eddy current sensor and the metal flange is determined according to the second sensing signal, and the two steps of acquiring the positional relationship between the trimming surface of the trimming head and the metal flange in the trimming head are not sequential, either one of the steps may be preferentially performed, or both of the steps may be simultaneously performed, which is not limited herein.
Optionally, a positional relationship between the eddy current sensor and the surface of the conditioning disk may also be obtained, and then the first thickness may be determined according to the positional relationship between the eddy current sensor and the surface of the conditioning disk, a distance between the eddy current sensor and the metal flange, and a positional relationship between the conditioning surface and the metal flange in the conditioning head, which are not described herein.
According to the application, the position relation between the trimming surface of the trimming head and the metal flange in the trimming head is obtained, the distance between the eddy current sensor and the metal flange is determined according to the second sensing signal, so that the first thickness of the area, opposite to the eddy current sensor, on the trimming pad can be determined according to the distance between the eddy current sensor and the metal flange and the position relation between the trimming surface and the metal flange, the thickness of the polishing pad is detected through the eddy current sensor, and since the thickness of the polishing pad is detected according to the eddy current sensor arranged on the polishing disc, no additional eddy current sensor is required to be arranged on the trimming head, the damage of polishing liquid to the eddy current sensor can be prevented, and since the detected area is the thickness of the area opposite to the eddy current sensor, compared with the average thickness of the polishing pad, the detected lifting height of the wafer is more accurate, and the thickness of the metal layer on the wafer is determined more accurately.
In one possible implementation manner, the opposite area of the polishing pad and the eddy current sensor is made to be a second thickness, a first mapping relation between the thickness of the metal layer and a third sensing signal output by the eddy current sensor is determined according to the metal layers with the plurality of thicknesses, the thickness of the polishing pad is changed, a plurality of second mapping relations between the thickness of the metal layer and a fourth sensing signal output by the eddy current sensor are respectively determined when the polishing pad is at different thicknesses, a signal conversion formula is determined according to the first mapping relation and the plurality of second mapping relations, and based on the signal conversion formula, the thickness of the metal layer on the wafer can be determined according to the first sensing signal, the first thickness value and the signal conversion formula when the thickness of the metal layer on the wafer is determined according to the first sensing signal and the first thickness value.
And respectively placing a plurality of wafers with different metal layer thicknesses in the detection area to obtain different third sensing signals output by the wafer eddy current sensor with different metal layer thicknesses, for example, when the thicknesses of the opposite areas of the polishing pad and the eddy current sensor are respectively the thicknesses of n wafers with the metal layer thicknesses of m 1-mn are respectively placed in the detection area, and respectively determining n third sensing signals output by the eddy current sensor corresponding to the n wafers with the metal layer thicknesses of m 1-mn. Thereby determining a first mapping relationship between the thickness of the metal layer and the third induced signal.
After the first mapping relation is determined, the size of the second thickness is changed, and a plurality of second mapping relations between the thickness of the metal layer and fourth sensing signals output by the eddy current sensor are determined when the polishing pad is in different thicknesses, for example, when the thicknesses of the opposite areas of the polishing pad and the eddy current sensor are h 2-h (t+1), n fourth sensing signals output by the eddy current sensor corresponding to n wafers with the thicknesses of the metal layer being m 1-mn are respectively determined, so that t second mapping relations can be determined, and the different second mapping relations correspond to the thicknesses of the opposite areas of the eddy current sensor on different polishing pads.
In an example, fig. 4 is a schematic diagram of a mapping relationship provided by the present application, and the mapping relationship between the thickness of the metal layer on the wafer and the value of the sensing signal (for example, the strength of the sensing signal) output by the eddy current sensor may be as shown in fig. 4.
And determining a signal conversion formula according to the first mapping relation and the second mapping relations, wherein the signal conversion formula can indicate the relation among the thickness of the polishing pad, the signal of the eddy current sensor and the thickness of the metal layer of the wafer, so that when the thickness of the metal layer on the wafer is determined, the thickness of the metal layer on the wafer can be determined according to the first sensing signal, the thickness of the area, opposite to the eddy current sensor, of the polishing pad and the signal conversion formula.
In the application, the thickness of the polishing pad is made to be the second thickness, the first mapping relation between the thickness of the metal layer and the third sensing signal output by the eddy current sensor is determined, then the thickness of the polishing pad is changed for a plurality of times, and a plurality of second mapping relations between the thickness of the metal layer and the fourth sensing signal output by the eddy current sensor are respectively determined under different thicknesses of the polishing pad, so that a signal conversion formula can be determined according to the first mapping relation and the plurality of second mapping relations, the thickness of the metal layer on the wafer can be determined according to the signal conversion formula, the first sensing signal and the first thickness, the detection of the thickness of the metal layer is realized, and the signal conversion formula is not required to be determined in real time during each detection, so that the efficiency of detecting the thickness of the metal layer can be improved.
In one possible implementation manner, when determining the signal conversion formula according to the first mapping relationship and the plurality of second mapping relationships, numerical fitting may be performed on the first mapping relationship and the plurality of second mapping relationships, a third mapping relationship between the mapping coefficient in the first mapping relationship and the thickness of the polishing pad is determined, and coefficient correction is performed on the mapping coefficient in the first mapping relationship according to the third mapping relationship, so as to obtain the signal conversion formula.
And carrying out numerical fitting on the first mapping relation and the plurality of second mapping relations, and determining a third mapping relation between the mapping coefficient in the first mapping relation and the thickness of the polishing pad, wherein the first mapping relation and the second mapping relation can be primary, secondary or tertiary functions, and the secondary functions are taken as examples for illustration.
In an example, the first mapping relationship and the second mapping relationship may be expressed as T (x) =ax≡2+bx+c, where T (x) represents an induction signal output by the eddy current sensor, x represents a thickness of a metal layer on the wafer, and ABC represents a mapping coefficient. The first mapping relationship is a mapping relationship between the induction signal generated by the eddy current sensor and the thickness of the metal layer on the wafer when the second thickness is h1, i.e., T1 (x) =a1x+_2+b1 when the second thickness is h1, the plurality of second mapping relationships are respectively used for the induction signal generated by the eddy current sensor and the thickness of the metal layer on the wafer when the second thickness is h 2-h (t+1), i.e., T2 (x) =a2x+_2+b2x+c2 when the second thickness is h2, T3 (x) =a3x+b3x+c3.. a=g1 (h), b=g2 (h), and c=g3 (h), wherein g (h) represents a function with an unknown number of h, and coefficient correction is performed on the mapping coefficient in the first mapping relationship through the third mapping relationship, so as to obtain a signal conversion formula, wherein the signal conversion formula is T (x) =g1 (h) x++g2 (h) x+g3 (h), and thus the first thickness h and the first induction signal T are substituted into the signal conversion formula, so that x in the formula can be obtained, namely, the thickness of the metal layer on the wafer is determined.
In the application, numerical fitting is carried out on the first mapping relation and the plurality of second mapping relations, a third mapping relation between the mapping coefficient in the first mapping relation and the thickness of the polishing pad is determined, and coefficient correction is carried out on the mapping coefficient according to the third mapping relation, so that a signal conversion formula can be obtained, and because numerical fitting is carried out on the plurality of mapping relations, the third mapping relation between the mapping coefficient and the thickness of the polishing pad is accurate, so that when the polishing pad is used, different mapping coefficients can be determined according to the thickness of the polishing pad, the thickness of the polishing pad is considered when the thickness of the metal layer of the wafer is detected, and the thickness of the detected metal layer of the wafer is more accurate due to the fact that the influence of the thickness of the polishing pad on the sensing signal of the eddy current sensor is considered.
In one possible implementation, the eddy current sensor includes a first induction coil through which a first induction signal is acquired as the eddy current sensor rotates with the polishing platen to under the moving wafer, and a second induction coil through which a second induction signal is acquired as the eddy current sensor rotates with the polishing platen to under the conditioning head that sweeps across the detection zone.
The eddy current sensor may include a first induction coil and a second induction coil, and the range of the induction ranges of the first induction coil and the second induction coil may be different, it being understood that the eddy current sensor rotates with the polishing platen, and that the first induction signal is acquired through the first induction coil having a smaller range when the eddy current sensor rotates below the wafer, and the second induction signal is acquired through the second induction coil having a larger range when the eddy current sensor rotates below the conditioning platen of the conditioning platen, because the distance between the metal layer on the wafer and the eddy current sensor is smaller than the distance between the eddy current sensor and the metal flange on the conditioning platen.
In the application, the electric vortex sensing comprises a first induction coil and a second induction coil, so that a first induction signal can be obtained through the first induction coil, and a second induction signal can be obtained through the second induction coil, so that the first induction signal and the second induction signal can be obtained through different induction coils at the same time, and the first induction coil and the second induction coil can be provided with different measuring ranges, so that the electric vortex sensing device can be suitable for signal induction of different distances.
In one possible implementation, the eddy current sensor comprises a third induction coil, and the method further comprises collecting a first induction signal or a second induction signal generated by the third induction coil according to a preset measurement time sequence, wherein the measurement time sequence is set at least according to the rotating speed of the polishing disk.
The electric vortex sensor can also only comprise a third induction coil, and can collect induction signals generated by the third induction coil according to a preset measuring time sequence, for example, when the electric vortex sensor rotates to the position below a wafer which rotates to move along with the polishing disk, the electric vortex sensor collects first induction signals generated by the third induction coil, and when the electric vortex sensor rotates to the position below a trimming head which sweeps over a detection area along with the polishing disk, the electric vortex sensor collects second induction signals generated by the third induction coil.
It should be noted that the rotation speed may determine the time for each rotation of the eddy current sensor to the corresponding position (e.g., to the position below the moving wafer and to the position below the conditioning head that sweeps across the detection area), that is, the faster the rotation speed, the shorter the time required to rotate to the corresponding position, so the measurement timing may be set at least according to the rotation speed of the polishing disk.
In an example, the currently collected induction signal may be determined to be the first induction signal or the second induction signal according to the signal intensity of the induction signal generated by the third induction coil, and it should be understood that, since the distance between the metal layer on the wafer and the eddy current sensor is smaller than the distance between the eddy current sensor and the metal flange on the trimming head, the signal intensity of the second induction signal is smaller than the signal intensity of the first induction signal for the third induction coil, the induction signal generated by the eddy current sensor may be collected all the time, the induction signal with higher induction signal intensity is determined to be the first induction signal, and the induction signal with lower induction signal intensity is determined to be the second induction signal.
In the application, the eddy current sensor comprises the third induction coil, and the first induction signal or the second induction signal generated by the third induction coil is acquired through the preset measuring time sequence, and the eddy current sensor comprises only one induction coil, so that the eddy current sensor has lower cost compared with the scheme of arranging two induction coils in the embodiment.
In one possible implementation, the conditioning head is controlled to sweep across the detection region according to a movement track of the wafer over the polishing pad such that the conditioning head is located in the detection region when the wafer is located in the detection region, wherein the detection region is an annular region, and the wafer and the conditioning head are located in different regions of the annular region.
Since the eddy current sensor is disposed on the polishing disk and rotates with the polishing disk during operation, an annular detection area is formed on the polishing pad, and fig. 5 is a schematic diagram of an annular detection area provided by the application, and as shown in fig. 5, the detection area is an annular area 400, when the wafer 300 moves to the annular area 400, the trimming head 202 is controlled to sweep the annular area 400, and the control logic is controlled to sweep the annular area 202 according to the moving track of the wafer 300 on the polishing pad 201, so that the trimming head 202 is also located in the annular area 400 every time the wafer 300 moves to the annular area 400, and thus, the second sensing signal can be acquired after the first sensing signal is acquired, and the acquisition time of the first sensing signal and the second sensing signal is shorter.
It should be noted that, as shown in fig. 2, the wafer 300 moves along the radial direction of the polishing pad 201, so the time when the wafer passes through the inspection area (annular area) can be determined according to the movement track of the wafer, thereby controlling the conditioner head to sweep through the inspection area, so that the conditioner head is located in the inspection area at the same time when the wafer is located in the inspection area.
According to the application, the trimming head is controlled to sweep the detection area according to the moving track of the wafer on the polishing pad, so that the trimming head is positioned in the detection area when the wafer is positioned in the detection area, and therefore, the second sensing signal can be acquired after the first sensing signal is acquired, the acquisition time difference between the first sensing signal and the second sensing signal is shorter, and the thickness of the metal layer on the wafer is accurately determined according to the first thickness and the first sensing signal after the first thickness is determined according to the second sensing signal.
Fig. 6 is a schematic diagram of a chemical mechanical polishing apparatus 200 provided by the present application, as shown in fig. 6, the chemical mechanical polishing apparatus 200 may include a polishing disk 203, a polishing pad 201, a dressing head 202, a carrier head 204, a liquid supply module 205, and a control module 206, where the carrier head 204 is used for carrying a wafer 300 so as to make the wafer 300 abut against the polishing pad 201, the polishing disk 203 includes an eddy current sensor 2031, the eddy current sensor 2031 is disposed in the polishing disk 203, a polishing pad 201 for polishing a metal layer on the wafer 300 is disposed on a top surface of the polishing disk 203, the liquid supply module 205 is used for supplying polishing liquid between the wafer 300 and the polishing pad 201, the dressing head 202 is used for dressing the polishing pad 201, and the control module 206 is used for acquiring a first sensing signal 2031 of the eddy current sensor when the wafer 300 runs to a detection area of the eddy current sensor 2031, acquiring a second sensing signal 2031 when the dressing head 202 sweeps across the detection area, and determining a first thickness value of the eddy current sensor 2031 on the polishing pad 201 according to the second sensing signal.
A control module 206, configured to obtain a positional relationship between a dressing surface of the dressing head 202 and a metal flange in the dressing head 202, where the dressing surface is in contact with the polishing pad 201, and the dressing surface is configured to dress the polishing pad 201, determine a distance between the eddy current sensor 2031 and the metal flange according to the second sensing signal, and determine the first thickness according to the distance and the positional relationship between the eddy current sensor 2031 and the metal flange.
In one possible implementation, the control module 206 is configured to determine, when the area of the polishing pad 201 opposite to the eddy current sensor 2031 is the second thickness, a first mapping relationship between the thickness of the metal layer and the third sensing signal output by the eddy current sensor 2031 according to the metal layers with multiple thicknesses, change the thickness of the polishing pad 201, respectively determine multiple second mapping relationships between the thickness of the metal layer and the fourth sensing signal output by the eddy current sensor 2031 when the polishing pad 201 is different in thickness, determine a signal conversion formula according to the first mapping relationship and the multiple second mapping relationships, and determine the thickness of the metal layer according to the first sensing signal, the first thickness value, and the signal conversion formula.
In one possible implementation, the control module 206 is configured to perform numerical fit on the first mapping relationship and the plurality of second mapping relationships, determine a third mapping relationship between the mapping coefficient in the first mapping relationship and the thickness of the polishing pad 201, and perform coefficient correction on the mapping coefficient in the first mapping relationship according to the third mapping relationship to obtain a signal conversion formula.
In one possible implementation, the eddy current sensor includes a first inductive coil and a second inductive coil, and the control module 206 is configured to acquire a first inductive signal through the first inductive coil when the eddy current sensor 2031 rotates with the polishing platen 203 under the moving wafer 300, and acquire a second inductive signal through the second inductive coil when the eddy current sensor 2031 rotates with the polishing platen 203 under the conditioning head 202 that sweeps across the detection area.
In one possible implementation, the eddy current sensor 2031 includes a third induction coil, and the control module 206 is configured to collect the first induction signal or the second induction signal generated by the third induction coil according to a preset measurement timing, where the measurement timing is set at least according to the rotation speed of the polishing disk 203.
In one possible implementation, the control module 206 is configured to control the conditioning head 202 to sweep through the detection area according to a movement track of the wafer 300 on the polishing pad 201, so that the conditioning head 202 is located in the detection area when the wafer 300 is located in the detection area, where the detection area is an annular area, and the wafer 300 and the conditioning head 202 are located in different areas of the annular area.
The application further provides an eddy current detection device based on polishing pad thickness compensation, which comprises a sensing signal acquisition module and a metal layer thickness determination module, wherein the sensing signal acquisition module is used for acquiring a first sensing signal of an eddy current sensor when a wafer moves to a detection area of the eddy current sensor, the eddy current sensor is arranged in a polishing disc included in chemical mechanical polishing equipment, a polishing pad used for polishing a metal layer on the wafer is arranged on the top surface of the polishing disc, the second sensing signal of the eddy current sensor is acquired when a trimming head included in the chemical mechanical polishing equipment sweeps across the detection area, the first thickness value determination module is used for determining a first thickness value of an area, opposite to the eddy current sensor, on the polishing pad according to the second sensing signal, and the metal layer thickness determination module is used for determining the thickness of the metal layer on the wafer according to the first sensing signal and the first thickness value.
Referring to fig. 7, a schematic structural diagram of an electronic device according to the present application is shown, and specific embodiments of the present application are not limited to specific implementations of the electronic device.
As shown in FIG. 7, the electronic device may include a processor 702, a communication interface (Communications Interface) 704, a memory 706, and a communication bus 708.
Wherein:
processor 702, communication interface 704, and memory 706 perform communication with each other via a communication bus 708.
Communication interface 704 for communicating with other electronic devices or servers.
The processor 702 is configured to execute the program 710, and may specifically perform relevant steps in the embodiment of the method for detecting an eddy current with thickness compensation as described above.
In particular, program 710 may include program code including computer-operating instructions.
The processor 702 may be a Central Processing Unit (CPU), or a graphics processor GPU (Graphics Processing Unit), or an Application SPECIFIC INTEGRATED Circuit (ASIC), or one or more integrated circuits configured to implement the present application. The one or more processors included in the smart device may be the same type of processor, such as one or more CPUs, one or more GPUs, or different types of processors, such as one or more CPUs and one or more GPUs and one or more ASICs.
Memory 706 for storing programs 710. The memory 706 may comprise high-speed RAM memory or may further comprise non-volatile memory (non-volatile memory), such as at least one disk memory.
The program 710 may be specifically configured to cause the processor 702 to perform the thickness compensated eddy current inspection method of any one of the embodiments described above.
The specific implementation of each step in the procedure 710 may refer to corresponding descriptions in the corresponding steps and units in any of the foregoing thickness compensated eddy current inspection method embodiments, which are not repeated herein. It will be clear to those skilled in the art that, for convenience and brevity of description, specific working procedures of the apparatus and modules described above may refer to corresponding procedure descriptions in the foregoing method embodiments, which are not repeated herein.
In the application, when the wafer moves to the detection area of the eddy current sensor, the first induction signal of the eddy current sensor is acquired, and when the trimming head sweeps across the detection area, the second induction signal of the eddy current sensor is acquired, and the first thickness of the area opposite to the eddy current sensor on the polishing pad is determined according to the second induction signal, so that the thickness of the metal layer on the wafer can be determined according to the first thickness and the first induction signal, and because the thickness of the polishing pad, namely the lifting height of the wafer, is considered when the thickness of the metal layer is determined, compared with the prior art, the lifting height is not considered, because the influence of the lift-off height on the induction signal generated by the eddy current sensor is considered, the thickness of the detected metal layer on the wafer is more accurate, and because the thickness of the polishing pad is detected according to the eddy current sensor arranged on the polishing disk, the additional eddy current sensor is not required to be arranged on the trimming head, the eddy current sensor can be prevented from being damaged by polishing liquid, and because the detected area is the thickness of the area opposite to the eddy current sensor, compared with the average thickness of the detected polishing pad, the lift-off height of the detected wafer is more accurate, and the thickness of the metal layer on the wafer is more accurate.
The present application also provides a computer program product comprising computer instructions that instruct a computing device to perform operations corresponding to any one of the method embodiments described above.
It is noted that each component/step described in the present application may be split into more components/steps, or two or more components/steps or part of the operations of the components/steps may be combined into new components/steps, as needed for implementation, to achieve the object of the present application.
The above-described method according to the present application may be implemented in hardware, firmware, or as software or computer code storable in a recording medium such as a CD ROM, RAM, floppy disk, hard disk, or magneto-optical disk, or as computer code originally stored in a remote recording medium or a non-transitory machine-readable medium and to be stored in a local recording medium downloaded through a network, so that the method described herein may be stored on such software process on a recording medium using a general purpose computer, special purpose processor, or programmable or special purpose hardware such as an ASIC or FPGA. It is understood that a computer, processor, microprocessor controller, or programmable hardware includes a memory component (e.g., RAM, ROM, flash memory, etc.) that can store or receive software or computer code that, when accessed and executed by the computer, processor, or hardware, implements the thickness compensated eddy current inspection methods described herein. Further, when the general-purpose computer accesses code for implementing the thickness-compensated eddy current inspection method shown herein, execution of the code converts the general-purpose computer into a special-purpose computer for executing the thickness-compensated eddy current inspection method shown herein.
Those of ordinary skill in the art will appreciate that the elements and method steps of the examples described in connection with the embodiments disclosed herein can be implemented as electronic hardware, or as a combination of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
The above embodiments are only for illustrating the present application, not for limiting the present application, and various changes and modifications may be made by one of ordinary skill in the relevant art without departing from the spirit and scope of the present application, and therefore, all equivalent technical solutions are also within the scope of the present application, and the scope of the present application is defined by the claims.
Claims (18)
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140106405A (en) * | 2013-02-25 | 2014-09-03 | 가부시키가이샤 에바라 세이사꾸쇼 | Method of adjusting profile of a polishing member used in a polishing apparatus, and polishing apparatus |
| US20150262893A1 (en) * | 2014-03-12 | 2015-09-17 | Ebara Corporation | Method of correcting film thickness measurement value, film thickness corrector and eddy current sensor |
| CN106466807A (en) * | 2015-08-21 | 2017-03-01 | K.C.科技股份有限公司 | Chemical mechanical polishing apparatus and method |
| CN113471094A (en) * | 2021-08-05 | 2021-10-01 | 清华大学 | Film thickness measuring method and chemical mechanical polishing equipment |
| CN115464556A (en) * | 2022-09-14 | 2022-12-13 | 清华大学 | Metal film thickness measuring method and chemical mechanical polishing equipment |
| WO2023035247A1 (en) * | 2021-09-10 | 2023-03-16 | 华为技术有限公司 | Chemical-mechanical polishing device and control method therefor |
| CN117900999A (en) * | 2020-06-24 | 2024-04-19 | 应用材料公司 | Substrate layer thickness determination using abrasive pad wear compensation |
| CN118789444A (en) * | 2024-09-13 | 2024-10-18 | 华海清科股份有限公司 | Metal film thickness measurement method, device, electronic device and storage medium using multi-modal signal compensation |
-
2024
- 2024-11-15 CN CN202510429611.6A patent/CN120287196A/en active Pending
- 2024-11-15 CN CN202411628959.XA patent/CN119159502B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140106405A (en) * | 2013-02-25 | 2014-09-03 | 가부시키가이샤 에바라 세이사꾸쇼 | Method of adjusting profile of a polishing member used in a polishing apparatus, and polishing apparatus |
| US20150262893A1 (en) * | 2014-03-12 | 2015-09-17 | Ebara Corporation | Method of correcting film thickness measurement value, film thickness corrector and eddy current sensor |
| CN106466807A (en) * | 2015-08-21 | 2017-03-01 | K.C.科技股份有限公司 | Chemical mechanical polishing apparatus and method |
| CN117900999A (en) * | 2020-06-24 | 2024-04-19 | 应用材料公司 | Substrate layer thickness determination using abrasive pad wear compensation |
| CN113471094A (en) * | 2021-08-05 | 2021-10-01 | 清华大学 | Film thickness measuring method and chemical mechanical polishing equipment |
| WO2023035247A1 (en) * | 2021-09-10 | 2023-03-16 | 华为技术有限公司 | Chemical-mechanical polishing device and control method therefor |
| CN115464556A (en) * | 2022-09-14 | 2022-12-13 | 清华大学 | Metal film thickness measuring method and chemical mechanical polishing equipment |
| CN118789444A (en) * | 2024-09-13 | 2024-10-18 | 华海清科股份有限公司 | Metal film thickness measurement method, device, electronic device and storage medium using multi-modal signal compensation |
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