CN119069412A - An electrostatic chuck and a method for reusing the electrostatic chuck - Google Patents
An electrostatic chuck and a method for reusing the electrostatic chuck Download PDFInfo
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- CN119069412A CN119069412A CN202411303613.2A CN202411303613A CN119069412A CN 119069412 A CN119069412 A CN 119069412A CN 202411303613 A CN202411303613 A CN 202411303613A CN 119069412 A CN119069412 A CN 119069412A
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- film
- electrostatic chuck
- contact layer
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- acid
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000005530 etching Methods 0.000 claims abstract description 78
- 239000002253 acid Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000010408 film Substances 0.000 claims description 136
- 239000010409 thin film Substances 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 25
- 238000004140 cleaning Methods 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 230000002378 acidificating effect Effects 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 238000007654 immersion Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000002035 prolonged effect Effects 0.000 abstract description 4
- 239000000654 additive Substances 0.000 abstract description 3
- 230000000996 additive effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 125
- 150000002736 metal compounds Chemical class 0.000 description 12
- 238000001179 sorption measurement Methods 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 6
- 229910010293 ceramic material Inorganic materials 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000003344 environmental pollutant Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 231100000719 pollutant Toxicity 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 238000005303 weighing Methods 0.000 description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052755 nonmetal Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000000306 component Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 238000002386 leaching Methods 0.000 description 1
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- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25B—TOOLS OR BENCH DEVICES NOT OTHERWISE PROVIDED FOR, FOR FASTENING, CONNECTING, DISENGAGING OR HOLDING
- B25B11/00—Work holders not covered by any preceding group in the subclass, e.g. magnetic work holders, vacuum work holders
- B25B11/005—Vacuum work holders
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to the technical field of electrostatic chucks, in particular to an electrostatic chuck and a reusable method of the electrostatic chuck. The electrostatic chuck comprises a substrate, an electrode layer, a contact layer and a film which are sequentially stacked on the substrate, wherein the etching rate of the film by an etchant for acid etching is larger than that of the contact layer by the etchant for acid etching. The invention provides an additive manufacturing method, wherein one or more layers of films are uniformly grown on a contact layer of an electrostatic chuck, after the electrostatic chuck is used, the polluted films can be selectively removed, and as the etching rate of the etching agent for acid etching to the films is larger than that of the etching agent for acid etching to the contact layer, the films can be removed in an acid etching mode without damaging the contact layer, and new films can be plated again after the removal, so that the service life of the electrostatic chuck is prolonged.
Description
Technical Field
The invention relates to the technical field of electrostatic chucks, in particular to an electrostatic chuck and a reusable method of the electrostatic chuck.
Background
The existing ceramics on the surface layer of the electrostatic chuck can be polluted or corroded by process products in the using process, so that the morphology of the ceramic layer is deformed. Currently, cleaning and polishing methods are generally used to treat contaminated or eroded ceramic layers to extend the life of the electrostatic chuck. However, this method affects the flatness and roughness of the surface layer, and the number of cleaning and polishing times is limited, which is an irreversible damage.
In the process of cleaning and polishing the surface layer for a long time, the changes of morphology, flatness, uniformity and the like can influence the adsorption and adsorption uniformity of the electrostatic chuck, so that the plasma etching on the surface of the electrostatic chuck is uneven, the yield is greatly reduced, and even the silicon wafer is cracked to be scrapped as a whole due to uneven adsorption force.
At present, after the electrostatic chuck performance is deteriorated due to a plurality of times of cleaning and polishing, only a method of scrapping or pulling out the original ceramic layer and adhering a new ceramic layer can be adopted.
Disclosure of Invention
The electrostatic chuck is used as a core component in the semiconductor process, and when the ceramic layer is polluted or corroded, the existing processing mode is to pull out the whole ceramic layer on the surface of the electrostatic chuck and then to glue a new ceramic layer again. The ceramic layer on the electrostatic chuck has precise structure, and the surface layer has complicated and exquisite morphology structure and the inner layer is also internally provided with a metal electrode layer. In order to solve at least one of the defects of the existing electrostatic chuck, the invention provides the electrostatic chuck and a reusable method of the electrostatic chuck.
In order to solve the technical problems, one of the technical schemes provided by the invention is as follows:
An electrostatic chuck, the electrostatic chuck comprising:
A substrate, and
An electrode layer, a contact layer and a thin film sequentially stacked on the substrate;
the etching rate of the film by the etchant for acid etching is greater than the etching rate of the contact layer by the etchant for acid etching.
The invention provides an additive manufacturing method, wherein one or more films are uniformly grown on a contact layer of an electrostatic chuck, after the electrostatic chuck is used, the polluted films can be selectively removed, the films can be removed in an acid etching mode without damaging the contact layer due to the difference of etching rates of the formed contact layer and the films, and new films can be plated again after the films are removed, so that the service life of the electrostatic chuck is prolonged.
In one embodiment, the ratio of the etching rate of the etching agent for acid etching to the etching rate of the contact layer is greater than 100:1, and the etching rate difference of larger acid etching is utilized to realize that the film on the contact layer is easier to clean under the condition of less influence on the contact layer.
In one embodiment, the material of the film is an oxide material that is susceptible to acid attack and resistant to plasma attack, and in order to make it easier to remove the film after use to form a new film, it is more suitable to select an oxide material that is susceptible to acid attack and resistant to plasma attack.
Preferably, the material of the film is selected from group IIIB metal compounds, or IVB metal compounds, or IIIA metal compounds, or IVA non-metal compounds, or a combination of the above;
preferably, the material of the film is selected from one of yttrium oxide, aluminum nitride, silicon oxide, silicon nitride, titanium nitride and diamond-like carbon or a composite material of the above materials.
In one embodiment, the thickness of the film is 0.5 μm or more and 50.0 μm or less, and the film is not too thick, which easily affects the adhesion to the contact layer and deteriorates the electrostatic adsorption force, and too thin which hardly plays a role required for providing the film.
In one embodiment, the contact layer is an insulating layer, the film is made of an insulating oxide material, or the contact layer is a conductive layer, and the film is made of a conductive oxide material.
In one embodiment, the ratio of the resistivity of the thin film to the resistivity of the contact layer is less than or equal to 5:1, and the adsorption is performed by applying a voltage based on the electrostatic chuck, and if the resistivity of the middle thin film is too high or low, the adsorption performance is affected. Preferably, the resistivity of the contact layer and the film layer is in the same order of magnitude, so that experiments show that the resistivity of the contact layer and the film layer is 5:1 or less, and the adsorption effect required by the electrostatic chuck can be fully met;
Preferably, the ratio of the resistivity of the film to the resistivity of the contact layer is 1:1.
In one embodiment, the contact layer is formed by sintering, and the thin film is formed by vacuum coating. The invention adopts a sintering mode and a vacuum coating mode for preparing the contact layer and the film respectively, so that the etching rate of the etching agent for acid etching to the film is larger than that of the etching agent for acid etching to the contact layer.
In one embodiment, the film is a multi-layer film structure comprising a bottom film proximate to the contact layer and a top film distal to the contact layer, the bottom film having a porosity greater than the top film;
When the film is in a multi-layer film structure, the porosity of the bottom film is larger than that of the surface film, so that the effect of releasing stress is achieved, the adhesive force of the surface film is improved, the surface film is not easy to peel off under the expansion stress of a high temperature difference and a low temperature difference, the surface film is compact in porosity, better in corrosion resistance and better in protection.
Preferably, the porosity of the bottom layer film is more than 1.0 per mill and less than 5.0 per mill, and the porosity of the surface layer film is less than 0.1 per mill;
preferably, the material of the bottom layer film is alumina, and the material of the surface layer film is yttria.
The second technical scheme provided by the invention is as follows:
The present invention provides a reusable method of an electrostatic chuck as described above, the method comprising the steps of:
Forming a patterned mask to protect chemically-susceptible portions of the electrostatic chuck and expose the contact layer and film;
performing acid etching on the contact layer and the film to remove the film;
Cleaning and drying the electrostatic chuck from which the film is removed;
a thin film is formed on the contact layer.
In an embodiment, the acid etching comprises immersion, spray or horizontal rinse, wherein the etchant for acid etching is selected from hydrofluoric acid and/or nitric acid.
In one embodiment, the acidic etch rate of the thin film is greater than the acidic etch rate of the contact layer.
Based on the above, compared with the prior art, the electrostatic chuck provided by the invention has at least one of the following beneficial technical effects:
the electrostatic chuck provided by the invention has the advantages that one or more layers of films are uniformly grown on the contact layer, the films have good compactness, polymers and pollutants generated in the process can be physically separated from the contact layer of the original electrostatic chuck, the films have good adhesive force and cannot fall off in the using period, the films can be made of ceramic materials such as yttrium oxide, aluminum oxide and aluminum nitride and have the characteristic of resisting plasma etching, the etching rate of the etching agent for acid etching on the films is higher than that of the etching agent for acid etching on the contact layer, so that the contact layer of the original electrostatic chuck cannot be influenced in the process of cleaning the films.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained according to the drawings without any inventive effort for a person skilled in the art, where the positional relationship described in the drawings in the following description, unless otherwise specified, are all based on the directions in which the components are depicted in the drawings.
FIGS. 1-4 are schematic flow diagrams of a method for manufacturing an electrostatic chuck according to the present invention;
FIG. 5 is a schematic view of an electrostatic chuck according to an embodiment of the present invention;
Fig. 6 is a flow chart of a method of re-use of the electrostatic chuck of the present invention.
Reference numerals:
1. Electrostatic chuck 10, substrate 10a, upper surface 10b, lower surface 20, electrode layer 20a, top surface 20b, side 30, contact layer 40, film 41, bottom film 42, top film.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments, technical features designed in different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other, and all other embodiments obtained by those skilled in the art without making creative efforts on the basis of the embodiments of the present invention are all within the scope of protection of the present invention.
In the description of the present invention, it should be noted that all terms used in the present invention (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs and are not to be construed as limiting the present invention, and it should be further understood that the terms used in the present invention should be construed as having meanings consistent with the meanings of the terms in the context of the present specification and the related art and should not be construed in an idealized or overly formal sense unless expressly so defined herein.
An embodiment of the present invention provides an electrostatic chuck 1, including:
A substrate 10, and
An electrode layer 20, a contact layer 30 and a thin film 40 sequentially stacked on the substrate 10;
the etching rate of the thin film 40 by the etchant for acid etching is greater than the etching rate of the contact layer 30 by the etchant for acid etching.
Referring to fig. 4, the electrostatic chuck 1 includes a substrate 10, an electrode layer 20, a contact layer 30, and a thin film 40. Suitable materials for the substrate include ceramic materials such as aluminum nitride (AlN), aluminum oxide (Al 2O3), silicon carbide (SiC), boron Nitride (BN), zirconium oxide (ZrO 2) and the like, and their compounds, which are formed by sintering in the prior art, and are well known to those skilled in the art, and detailed details will not be described herein, the substrate 10 has opposite upper and lower surfaces 10a and 10b, the electrode layer 20 is disposed on the upper surface 10a of the substrate 10, the suitable electrode layer material may be a high melting point metal or metal alloy material such as molybdenum, tungsten, their compounds, and the like, the electrode layer 20, The contact layer 30 and the thin film 40 are sequentially stacked on the substrate 10, preferably, referring to fig. 4, the electrode layer 20 is partially covered on the upper surface 10a of the substrate 10, the contact layer 30 is covered on the top surface 20a and the side surface 20b of the electrode layer 20 and simultaneously covers the upper surface 10a of the substrate 10 not covered by the electrode layer 20, the contact layer is preferably made of ceramic material such as aluminum nitride (AlN), aluminum oxide (Al 2O3), silicon carbide (SiC), boron Nitride (BN), zirconium oxide (ZrO 2) and the like, the contact layer 30 is formed by sintering in the prior art, details of which are not repeated herein, the thin film is preferably made of oxide material which is easy to be corroded by acid and is resistant to corrosion by plasma, and thus, the thin film is preferably made of material selected from the group IIIB metal compound, Or a group IVB metal compound, or a group IIIA metal compound, or a group IVA non-metal compound, or a combination thereof, for example, yttrium oxide (Y 2O3), aluminum oxide (Al 2O3), aluminum nitride (AlN), silicon oxide (SiO 2), a material suitable for the thin film may be, Silicon nitride (Si 3N4), titanium nitride (TiN), One or more of the diamond-like carbon composite materials, so that the film can be removed more easily to form a new film, wherein the film can be formed by vacuum coating technology such as CVD (Chemical Vapor Deposition )/PVD (Physical Vapor Deposition, physical vapor deposition)/ALD (Atomic Layer Deposition ) and the like, and the film is easy to form quickly, high in purity, compact in structure, and greatly improved in resistivity and other properties.
In this embodiment, a film is formed on the surface of the contact layer formed by sintering by vapor deposition, so that the film has more excellent compactness, polymers and pollutants generated in the process can be physically separated from the ceramic layer of the original electrostatic chuck, the film also has more excellent adhesive force on the contact layer, and cannot fall off in the use process, and the etching rate difference of the etching agents of the film and the contact layer enables the film and the contact layer to be more easily removed by using chemical reagents, so that the removal mode is simple, the polymers and the pollutants on the surface of the film can be removed together during removal, the contact layer is formed by integral sintering, the film is extremely compact, the contact layer is hardly affected during removal, and the contact layer surface after the film is removed can be coated again, so that the purpose of repeated cleaning and utilization is achieved, and the service life of the electrostatic chuck is greatly prolonged.
In summary, the present invention proposes an additive manufacturing method, in which one or more films are uniformly grown on a contact layer of an electrostatic chuck, after the electrostatic chuck is used, the contaminated films can be selectively removed, and due to the difference in etching rates of the formed contact layer and the etching agent of the films, the films can be removed by means of acid etching without damaging the contact layer, and new films can be re-plated after removal, thereby prolonging the service life of the electrostatic chuck.
In an embodiment, the ratio of the etching rate of the etching agent for acid etching to the etching rate of the contact layer is greater than 100:1, and the contact layer and the film are easier to delaminate by using an acid etching mode under the difference of the etching rates, so that the film on the contact layer is easier to clean.
In an embodiment, the average grain size of the contact layer is greater than the average grain size of the film, preferably the contact layer has an average grain size of 0.5 μm or more and 5.0 μm or less, and/or the film has an average grain size of 0.04 μm or more and 0.06 μm or less. The average grain size of the contact layer may be 0.5, 1.0, 1.5, 2.0, 2.5, 3.0, 3.5, 4.0, 4.5, 5.0 μm, or a point value between any two of the above, the thin film may be 0.04, 0.045, 0.05, 0.055, 0.06 μm, or a point value between any two of the above, and the thin film on the contact layer may be more easily removed under the difference of the average grain sizes.
In one embodiment, the thickness of the film 40 is 0.5 μm or more and 50.0 μm or less, the thickness of the film may be 0.5, 1.0, 1.5, 2.0, 2.5, 3.0, 3.5, 4.0, 4.5, 5.0 μm, and may be 10.0, 15.0, 20.0, 25.0, 30.0, 35.0, 40.0, 45.0, 50.0 μm or a point value therebetween, the thickness of the film is not too thick, which easily affects adhesion to the contact layer and deteriorates electrostatic adsorption force, and too thin is difficult to perform the function required for disposing the film.
In one embodiment, the contact layer is an insulating layer, the film is made of an insulating oxide material, or the contact layer is a conductive layer, and the film is made of a conductive oxide material.
In one embodiment, the ratio of the resistivity of the thin film to the resistivity of the contact layer is less than or equal to 5:1, and the adsorption is performed by applying a voltage based on the electrostatic chuck, and if the resistivity of the middle thin film is too high or low, the adsorption performance is affected. Preferably, the resistivity of the contact layer and the film layer is in the same order of magnitude, so that experiments show that the resistivity of the contact layer and the film layer is 5:1 or less, and the adsorption effect required by the electrostatic chuck can be fully met;
Preferably, the ratio of the resistivity of the film to the resistivity of the contact layer is 1:1.
In one embodiment, the contact layer is formed by sintering, and the thin film is formed by vacuum evaporation. The invention adopts a sintering mode and a vacuum evaporation mode for preparing the contact layer and the film respectively, so that the etching rate of the etching agent for acid etching to the film is larger than that of the etching agent for acid etching to the contact layer.
In one embodiment, referring to FIG. 5, the film 40 is a multi-layer film structure comprising a bottom film 41 adjacent to the contact layer and a top film 42 remote from the contact layer, the bottom film 41 having a porosity greater than the top film 42;
When the film is in a multi-layer film structure, the porosity of the bottom film is larger than that of the surface film, so that the effect of releasing stress is achieved, the adhesive force of the surface film is improved, the surface film is not easy to peel off under the expansion stress of a high temperature difference and a low temperature difference, the surface film is compact in porosity, better in corrosion resistance and better in protection. Preferably, the porosity of the bottom film is 1.0% or more and 5.0% or less, the porosity of the top film is 0.1% or less, the porosity of the bottom film 41 may be 1.0% or less, 1.5% or less, 2.0% or less, 3.0% or less, 3.5% or less, 4.0% or less, 4.5% or less, 5.0% or less, preferably, the material of the bottom film is alumina, the material of the top film is yttria, wherein yttria has good plasma corrosion resistance, and alumina has high hardness, high resistivity, high heat conduction and other characteristics, so that the top film has better corrosion resistance, can play a better protective role, and the bottom film is alumina, and can improve the overall performance of the electrostatic chuck.
Referring to fig. 1-4, an embodiment of the present invention provides a method for manufacturing the electrostatic chuck, comprising the steps of:
Step 1, referring to fig. 1, a substrate 10 is provided, wherein suitable materials of the substrate 10, such as ceramic materials including aluminum nitride (AlN), aluminum oxide (Al 2O3), silicon carbide (SiC), boron Nitride (BN), zirconium oxide (ZrO 2) and the like, and their compounds, may be formed by sintering in the prior art, and are well known to those skilled in the art, and details thereof will not be repeated here;
Step 2, referring to fig. 2-3, sequentially forming an electrode layer 20 and a contact layer 30 stacked on the substrate 10, wherein suitable electrode layer materials may be high melting point metals or metal alloy materials such as molybdenum, tungsten, and their compounds, and suitable contact layer materials may also be ceramic materials such as aluminum nitride (AlN), aluminum oxide (Al 2O3), silicon carbide (SiC), boron Nitride (BN), zirconium oxide (ZrO 2）, and their compounds, and the contact layer 30 is formed by sintering in the prior art, which is well known to those skilled in the art, and specific details are not repeated here;
In step 3, referring to fig. 4, a thin film 40 is deposited on the contact layer 30, where the material of the thin film is selected from group IIIB metal compound, group IVB metal compound, group IIIA metal compound, group IVA non-metal compound, or a combination thereof, and for example, the material suitable for the thin film may be yttrium oxide (Y 2O3), aluminum oxide (Al 2O3), aluminum nitride (AlN), silicon oxide (SiO 2), silicon nitride (Si 3N4), titanium nitride (TiN), or a composite material of the foregoing, and the thin film may be formed by vacuum plating technology, such as chemical vapor deposition or physical vapor deposition, so that the thin film is easy to form quickly, the purity of the formed thin film component is high, the structure is dense, the resistivity and other properties are all greatly improved or improved, especially, the etching rate difference between the contact layer and the etching agent of the thin film may be formed, and the thin film may be removed by means of acid etching, and the thin film may be re-plated after the removal without damaging the contact layer, so as to prolong the service life of the electrostatic chuck. In an embodiment, referring to fig. 5, the film is a multi-layer film structure, and each layer of film may be formed sequentially, which is not described herein in detail.
Referring to fig. 6, the present invention provides a reusable method of an electrostatic chuck, the method comprising the steps of:
Step 1, forming a patterning mask to protect the part of the electrostatic chuck which is easy to be chemically corroded and expose the contact layer and the film, wherein the step mainly covers sensitive parts of the electrostatic chuck, and the sensitive parts comprise but are not limited to metal, glue and the like;
Step2, carrying out acid etching on the contact layer and the film to remove the film, wherein the acid etching comprises soaking, spraying or horizontal leaching, and the etchant is selected from hydrofluoric acid and/or nitric acid;
due to the difference in etchant etching rates of the formed contact layer and the thin film, the acidic etching rate of the thin film is larger than that of the contact layer, so that the contact layer is less prone to corrosion, and the service life of the electrostatic chuck is prolonged.
Step 3, cleaning and drying the electrostatic chuck after the film is removed;
And step 4, forming a film on the contact layer, wherein the film can still be formed by a vacuum coating technology, such as chemical vapor deposition or physical vapor deposition, and the details are not repeated here.
The invention provides the following test methods for the acidic etching rate and selectivity ratio of the contact layer and the thin film;
the used instruments comprise an analytical balance (one ten thousandth) and an oven;
the reagents used include nitric acid (concentration about 10%);
The testing method comprises the following steps:
s1, respectively taking electrostatic chuck samples with films and without films as an experimental group and a control group, and cleaning the surfaces with dust-free cloth.
S2, placing the sample into an oven to be dried for 1-2h at 120 ℃, cooling to room temperature, weighing by an analytical balance and recording. The steps of drying and weighing are repeated until the weight of the sample is constant, and the constant weight is the mass m 1 before reaction.
S3, placing the sample into nitric acid, and soaking for 20 hours to enable the acid to fully react with the surface of the sample.
S4, taking out the sample from the acid, washing the sample with pure water for 3 times, wiping the sample with dust-free cloth, putting the sample into an oven for drying at 120 ℃ for 1-2h, cooling the sample to room temperature, and weighing the sample with an analytical balance. And repeating the steps of drying and weighing until the weight is constant, wherein the constant weight is the mass m 2 after the reaction with the acid.
S5, calculating the etching rate of the sample and the acid, and the selection ratio of the surface of the film to the acid reaction.
The etching rate v= (m 2-m1)/t of the sample and the acid;
The selectivity ratio k=v With thin films /V film-free of the reaction of the surface of the film with the acid.
The electrostatic chuck provided by the invention has the advantages that one or more layers of films uniformly grow on the contact layer, the films have good compactness, polymers and pollutants generated in the process can be physically separated from the contact layer of the original electrostatic chuck, the films of the films have good adhesive force and cannot fall off in the using period, the films can be made of ceramic materials such as yttrium oxide, aluminum oxide and aluminum nitride and have the characteristic of resisting plasma etching, the etching rate of the etching agent for acid etching on the films is higher than that of the etching agent for acid etching on the contact layer, so that the contact layer of the original electrostatic chuck cannot be influenced in the process of cleaning the films.
In addition, it should be understood by those skilled in the art that although there are many problems in the prior art, each embodiment or technical solution of the present invention may be modified in only one or several respects, without having to solve all technical problems listed in the prior art or the background art at the same time. Those skilled in the art will understand that nothing in one claim should be taken as a limitation on that claim.
Although terms such as electrostatic chuck, substrate, upper surface, lower surface, electrode layer, top surface, side, contact layer, film, underlayer film, top film, etc. are more used herein, the possibility of using other terms is not precluded. These terms are only used to more conveniently describe and explain the nature of the invention and should be construed in a manner that does not depart from the spirit of the invention by any of the additional limitations, the terms "first," "second," etc. (if any) in the description of embodiments of the invention and in the claims and drawings described above are intended to distinguish between similar objects and are not necessarily used to describe a particular sequence or order.
It should be noted that the above embodiments are merely for illustrating the technical solution of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the above embodiments, it should be understood by those skilled in the art that the technical solution described in the above embodiments may be modified or some or all of the technical features may be equivalently replaced, and these modifications or substitutions do not make the essence of the corresponding technical solution deviate from the scope of the technical solution of the embodiments of the present invention.
Claims (8)
1. An electrostatic chuck, the electrostatic chuck comprising:
A substrate, and
An electrode layer, a contact layer and a thin film sequentially stacked on the substrate;
the etching rate of the film by the etchant for acid etching is greater than the etching rate of the contact layer by the etchant for acid etching.
2. The electrostatic chuck of claim 1, wherein the ratio of the etching rate of the acidic etchant to the film to the etching rate of the acidic etchant to the contact layer is greater than 100:1.
3. The electrostatic chuck of claim 1, wherein the film is an oxide material that is acid-erodible and plasma-erosion resistant.
4. The electrostatic chuck of claim 1, wherein the film has a thickness of 0.5 μm or more and 50.0 μm or less.
5. The electrostatic chuck of claim 1, wherein said contact layer is formed by sintering and said thin film is formed by vacuum plating.
6. A method of re-use of an electrostatic chuck according to any one of claims 1-5, comprising the steps of:
forming a patterned mask to protect the chemically-susceptible portions of the electrostatic chuck and expose the contact layer and the thin film;
performing acid etching on the contact layer and the film to remove the film;
Cleaning and baking the electrostatic chuck after the film is removed;
a thin film is formed on the contact layer.
7. The method of claim 6, wherein the acid etching comprises immersion, spray or horizontal rinse, and wherein the etchant for the acid etching is selected from hydrofluoric acid and/or nitric acid.
8. The method of claim 7, wherein the film has an acid etch rate greater than the acid etch rate of the contact layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411303613.2A CN119069412A (en) | 2024-09-19 | 2024-09-19 | An electrostatic chuck and a method for reusing the electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411303613.2A CN119069412A (en) | 2024-09-19 | 2024-09-19 | An electrostatic chuck and a method for reusing the electrostatic chuck |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN119069412A true CN119069412A (en) | 2024-12-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202411303613.2A Pending CN119069412A (en) | 2024-09-19 | 2024-09-19 | An electrostatic chuck and a method for reusing the electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN119069412A (en) |
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- 2024-09-19 CN CN202411303613.2A patent/CN119069412A/en active Pending
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