CN119064749B - High temperature characteristics testing method, device and readable storage medium for semiconductor devices - Google Patents
High temperature characteristics testing method, device and readable storage medium for semiconductor devices Download PDFInfo
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Abstract
The application relates to the technical field of semiconductor device testing, in particular to a method and equipment for testing the high-temperature characteristics of a semiconductor device and a readable storage medium, wherein the method for testing the high-temperature characteristics comprises the steps of applying a preheating current to the semiconductor device; the method comprises the steps of applying test current and/or test voltage to a semiconductor device to perform high-temperature characteristic test on the semiconductor device, applying small signal current to the semiconductor device in response to the end of the test, obtaining the current junction temperature of the semiconductor device, predicting the test junction temperature of the semiconductor device at the moment of the end of the test based on the temperature difference prediction coefficient of the semiconductor device, the current junction temperature and the test end time period, determining whether the current round of test is effective or not based on the test junction temperature and the target test temperature, ending the test if the current round of test is effective, generating a test result, correcting the current value of the preheating current if the current round of test is not effective, and returning to the step of applying the preheating current to the semiconductor device. By the mode, the high-temperature characteristic test precision of the semiconductor device can be improved.
Description
Technical Field
The present application relates to the field of semiconductor device testing technology, and in particular, to a method and apparatus for testing high temperature characteristics of a semiconductor device, and a readable storage medium.
Background
In order to secure the performance and reliability of the semiconductor device, it is necessary to test a characteristic parameter of the semiconductor device at a high temperature (hereinafter referred to as "high temperature characteristic parameter"). At present, when characteristic parameters such as On-resistance (Drain-Source On-STATE RESISTANCE, R DSON), IGBT saturation voltage drop (Collector-Emitter saturation voltage, V CE（sat）), body diode forward voltage drop (Diode Forward Voltage, V SD), forward transconductance (Forward Transconductance, G FS) and the like of a semiconductor device are tested under high temperature conditions, the semiconductor device is placed On a heating table, the semiconductor device is integrally heated to a target test temperature by the heating table, and then test current and voltage are applied to the semiconductor device to test the high temperature characteristic parameters. However, the semiconductor device generates heat when passing through the test current, which results in the junction temperature of the semiconductor device exceeding the target test temperature during the test, thereby affecting the accuracy of the test result.
Therefore, how to control the test junction temperature of the semiconductor device to improve the accuracy of the high-temperature characteristic test of the semiconductor device becomes a technical problem to be solved currently.
Disclosure of Invention
In view of the above, the present application provides a method, apparatus, and readable storage medium for testing high temperature characteristics of a semiconductor device, which can improve the accuracy of the high temperature characteristic test of the semiconductor device.
In order to solve the technical problems, the application provides a method for testing the high-temperature characteristics of a semiconductor device, which comprises the steps of applying a preheating current to the semiconductor device, applying a test current and/or a test voltage to the semiconductor device to perform the high-temperature characteristic test on the semiconductor device, applying a small signal current to the semiconductor device in response to the test, acquiring the current junction temperature of the semiconductor device, predicting the test junction temperature of the semiconductor device at the moment of the test ending based on the temperature difference prediction coefficient of the semiconductor device, the current junction temperature and the test ending time, wherein the test ending time is the time interval between the acquisition time of the current junction temperature and the test ending time, determining whether the current round test is effective based on the test junction temperature and the target test temperature, if yes, ending the test, generating a test result, otherwise, correcting the current value of the preheating current, and returning to the step of applying the preheating current to the semiconductor device.
According to some embodiments of the present application, the step of determining whether the current round of testing is valid based on the test junction temperature and the target test temperature includes determining whether a difference between the test junction temperature and the target test temperature falls within a preset error interval, if so, determining that the current round of testing is valid, and if not, determining that the current round of testing is invalid.
According to some embodiments of the application, the step of correcting the current value of the preheating current comprises correcting the current value of the preheating current based on the difference between the test junction and the target test temperature, wherein the current value of the preheating current is reduced by a first preset step when the difference is positive, and the current value of the preheating current is increased by a second preset step when the difference is negative.
According to some embodiments of the application, the first preset step size is positively correlated with the magnitude of the difference value and the second preset step size is negatively correlated with the magnitude of the difference value.
According to some embodiments of the application, the step of obtaining the current junction temperature of the semiconductor device comprises the steps of obtaining a K coefficient of the semiconductor device, wherein the K coefficient is used for representing the relation between the junction temperature of the device and the voltage of the device, collecting the voltages at two ends of a body diode in the semiconductor device, and determining to obtain the current junction temperature of the semiconductor device based on the K coefficient and the voltages at two ends of the body diode.
According to some embodiments of the application, the step of predicting the test junction temperature of the semiconductor device at the test ending moment based on the temperature difference prediction coefficient, the current junction temperature and the test ending time period of the semiconductor device comprises the steps of determining the temperature difference prediction coefficient based on the first junction temperature of the semiconductor device at a first moment, the second junction temperature of the semiconductor device at a second moment and a time interval between the first moment and the second moment, wherein the semiconductor device is applied with a small signal current at the first moment and the second moment, determining a junction temperature change value based on the temperature difference prediction coefficient and the test ending time period, and determining the test junction temperature of the semiconductor device at the test ending moment based on the junction temperature change value and the current junction temperature.
According to some embodiments of the present application, the step of determining the junction temperature variation value based on the temperature difference prediction coefficient and the test end time period includes determining the junction temperature variation value using the following formula (1):
wherein, in the above formula (1), Δt (T 1) refers to the junction temperature variation value, X refers to the temperature difference prediction coefficient, and T 1 refers to the test end period.
According to some embodiments of the application, the current value of the small signal current is less than or equal to a minimum current value required for the semiconductor device to heat.
In a second aspect, an embodiment of the application provides an electronic device comprising a processor, and a memory, in which computer program instructions are stored,
Wherein the computer program instructions, when executed by the processor, cause the processor to perform the method for testing the high temperature characteristics of a semiconductor device according to the above technical solution.
In a third aspect, an embodiment of the present application provides a computer readable storage medium, where a computer program is stored, where the computer program when executed by a processor causes the processor to execute a method for testing a high temperature characteristic of a semiconductor device according to the above technical solution.
The technical scheme of the application has at least one of the following beneficial effects that the test junction temperature of the semiconductor device is precisely controlled by adopting a preheating current correction mode, and a stable high-temperature test environment is provided for the semiconductor device, so that the high-temperature characteristic test precision of the semiconductor device is improved, and the test result is more accurate. In addition, by referring to the temperature difference prediction coefficient, the current junction temperature and the test ending time length of the semiconductor device, the accurate test junction temperature can be predicted, the judgment precision of the test effectiveness is improved, and the test precision is further improved.
Furthermore, the first preset step size may be positively correlated with the magnitude of the difference value, and the second preset step size may be negatively correlated with the magnitude of the difference value. By the method, the preheating current can be dynamically adjusted, so that the efficiency and the accuracy of preheating current correction are improved.
In addition, the temperature difference prediction coefficient of the semiconductor device is determined firstly, then the temperature change generated by the semiconductor device after the test is finished is determined based on the temperature difference prediction coefficient and the test finishing time, and then the current junction temperature is combined for further deduction to obtain the test junction temperature, so that the prediction precision of the test junction temperature can be improved.
Drawings
Fig. 1 is a flowchart of a method for testing high temperature characteristics of a semiconductor device according to an embodiment of the present application;
FIG. 2 is a flowchart showing a step of obtaining a current junction temperature of a semiconductor device in a method for testing a high temperature characteristic of the semiconductor device according to an embodiment of the present application;
FIG. 3 is a flowchart showing the steps of predicting the junction temperature of a semiconductor device at the moment of ending the test based on the temperature difference prediction coefficient, the current junction temperature and the test ending time length of the semiconductor device in the method for testing the high temperature characteristics of the semiconductor device according to the embodiment of the application;
fig. 4 is a schematic diagram of an electronic device according to an embodiment of the application.
Detailed Description
The following describes in further detail the embodiments of the present application with reference to the drawings and examples. The following examples are illustrative of the application and are not intended to limit the scope of the application.
The high temperature characteristic test is to test high temperature characteristic parameters of the semiconductor device, wherein the semiconductor device performing the high temperature characteristic test may include, but is not limited to, a silicon-based power device and a silicon carbide power device. The high temperature characteristic parameters may include, but are not limited to, R DSON、VSD and G FS of the semiconductor device at high temperatures. It will be appreciated that the present application is not limited to the high temperature characteristic parameters and the type of semiconductor device.
At present, when testing high temperature characteristic parameters of a semiconductor device, the semiconductor device is placed on a heating table, the semiconductor device is heated to a target test temperature as a whole by the heating table, and then a test current is applied to the semiconductor device to test the high temperature characteristic parameters. However, the semiconductor device generates heat when passing through the test current, so that the junction temperature of the semiconductor device exceeds the target test temperature in the test process, and the accuracy of the test result is further affected.
Therefore, how to control the test junction temperature of the semiconductor device to improve the accuracy of the high-temperature characteristic test of the semiconductor device becomes a technical problem to be solved currently.
In order to solve the technical problems, the application provides a method for testing the high-temperature characteristics of a semiconductor device, which comprises the specific steps of firstly applying a preheating current to the semiconductor device to heat the semiconductor device and then testing the high-temperature characteristics of the semiconductor device. And in response to the end of the test, predicting the test junction temperature of the semiconductor device at the moment of the end of the test, and determining whether the test result is valid or not on the condition of the test junction temperature. And, when it is determined that the test result is invalid, correcting the current value of the preheating current applied to the semiconductor device, and retesting the semiconductor device until a valid test result is generated.
The high-temperature characteristic test method provided by the application precisely controls the test junction temperature of the semiconductor device by adopting the preheating current correction mode, and provides a stable high-temperature test environment for the semiconductor device, thereby improving the precision of the high-temperature characteristic test of the semiconductor device and ensuring more accurate test results. The method for testing the high-temperature characteristics of the semiconductor device provided by the application is described in detail below.
As shown in fig. 1, a method for testing high temperature characteristics of a semiconductor device according to an embodiment of the present application includes:
Step 110, applying a preheat current to the semiconductor device.
In one example, the current value of the preheat current is lower than the current value required by the junction temperature of the semiconductor device to reach the target test temperature to reserve a warm-up space for the test current and/or test voltage required for subsequent high temperature characteristic testing, such that the junction temperature of the semiconductor device during the high temperature characteristic testing approaches the target test temperature.
The target test temperature generally does not exceed the maximum temperature that the semiconductor device can withstand during normal operation, and the specific value of the target test temperature may depend on the factory parameters or the test specifications of the semiconductor device, which is not limited herein. In an example, the current value of the preheating current may be 10A, and the present application is not limited thereto, and the specific current value of the preheating current may be set according to actual requirements.
For convenience of description, the application will be described with reference to the case of applying a preheating current to a semiconductor device, and in the practical application process, the semiconductor device may be heated in a form of selectively applying a preheating current and/or a preheating voltage to the semiconductor device according to the practical application. It is understood that in the case where the preheating voltage is applied to the semiconductor device, the voltage value of the preheating voltage may be lower than the voltage value required for the junction temperature of the semiconductor device to reach the target test temperature.
Step 120, applying a test current and/or a test voltage to the semiconductor device to perform a high temperature characteristic test on the semiconductor device.
The application of the test current and/or the test voltage to the semiconductor device may be selected according to a test item (e.g., an on-resistance test, a body diode forward voltage drop test, a forward transconductance test, etc.), wherein a current value of the test current and a voltage value of the test voltage may be set according to a factory parameter of the semiconductor device and the test item, which is not limited herein.
For example, in one example of testing the on-resistance of a semiconductor device, a test voltage at the maximum steady-state drive voltage value allowed by the device factory between the gate and source may be applied to the semiconductor device while a test current at the maximum drain-source current value allowed to pass between the drain and source during normal operation of the device is applied.
And 130, applying a small signal current to the semiconductor device and acquiring the current junction temperature of the semiconductor device in response to the test.
In response to the end of the test, a small signal current is applied to the semiconductor device in order to determine the present junction temperature of the semiconductor device, thereby providing a precondition for a subsequent prediction of the test junction temperature of the semiconductor device at the instant the test is ended.
Specifically, "end of test" refers to stopping the application of the test current and/or the test voltage to the semiconductor device. In one example, a small signal current may be applied to the semiconductor device at the end of the test, thereby improving the accuracy of the prediction of the test junction temperature. In one example, the small signal current may be applied to the semiconductor device for a preset period of time after the test is completed, wherein the preset period of time takes a value that is as small as possible in terms of the change in junction temperature of the semiconductor device. For example, within 100us after the end of the test, the junction temperature of the semiconductor device is reduced by only 3 ℃ and is within the normal temperature variation range, and then the preset time period may be set to be 100us. By setting the preset time period, the test instruments with different response times can be adapted on the basis of ensuring the prediction accuracy, so that the application range of the test method is enlarged.
In an embodiment, the current value of the small signal current is smaller than or equal to the minimum current value required for the semiconductor device to generate heat, in other words, the semiconductor device does not generate heat when the small signal current is applied to the semiconductor device, in this way, the accuracy of the prediction of the subsequent test junction temperature can be improved. In one example, the current value of the small signal current may be taken as 50mA. It is understood that the current value of the small signal current may be determined according to factory parameters of the semiconductor device, and the current value of the small signal current is not limited here.
And 140, predicting the test junction temperature of the semiconductor device at the moment of the test ending based on the temperature difference prediction coefficient, the current junction temperature and the test ending time of the semiconductor device.
The temperature difference prediction coefficient of the semiconductor device may characterize the degree of thermal diffusion of the semiconductor device. The test ending time is the time interval between the acquisition time of the current junction temperature and the test ending time. The specific steps for predicting the test junction temperature of a semiconductor device at the end of the test are described in detail in the following examples and are not described in detail herein.
Step 150, determining whether the test is valid or not based on the test junction temperature and the target test temperature.
The test junction temperature and the target test temperature can be used for determining whether the test junction temperature of the semiconductor device in the test is consistent with the target test temperature, if the test junction temperature is consistent with the target test temperature, the test is accurate, the test is effective, and if the test junction temperature is inconsistent with the target test temperature, the test is error, and if the test junction temperature is inconsistent with the target test temperature, the test is invalid.
In one embodiment, it may be determined whether a difference between the test junction temperature and the target test temperature falls within a preset error interval, and if the difference falls within the preset error interval, it is determined that the current test is valid, and if the difference does not fall within the preset error interval, it is determined that the current test is invalid.
It will be appreciated that the preset error interval may be set according to the actual accuracy requirement, and the preset error interval is not limited herein. In one example, the preset error interval may be set to [ -0.1,0.1] deg.C, indicating that the test is not effective if the target test temperature is 175 deg.C and the test junction temperature is 174 deg.C. In one example, the preset error interval may be set to [ -1,1] °c, indicating that the test is valid for this round if the target test temperature is 175 ℃ and the test junction temperature is 174 ℃.
And 160, ending the test if the test is valid, and generating a test result.
Step 170, if the test is invalid, correcting the current value of the preheating current, and returning to the step of applying the preheating current to the semiconductor device.
If the test of the round is invalid, the test result generated by the test of the round is inaccurate, so that the current value of the preheating current needs to be corrected, the test junction temperature is close to the target test temperature, and the test is repeated until an accurate test result is generated.
Wherein "retesting" refers to returning to the step of applying a preheat current to the semiconductor device, i.e., re-performing steps 120-170 described above with the modified preheat current. Specifically, the corrected preheating current is applied to the semiconductor device to heat the semiconductor device again, and then the subsequent steps 120-170 are performed to perform the high temperature characteristic test on the semiconductor device and to check the validity of the present round of test until the validity test is completed.
According to the embodiment, the test junction temperature of the semiconductor device is accurately controlled by adopting the preheating current correction mode, and a stable high-temperature test environment is provided for the semiconductor device, so that the high-temperature characteristic test precision of the semiconductor device is improved, and the test result is more accurate. In addition, by referring to the temperature difference prediction coefficient, the current junction temperature and the test ending time length of the semiconductor device, the accurate test junction temperature can be predicted, the judgment precision of the test effectiveness is improved, and the test precision is further improved.
In one embodiment, the step of correcting the current value of the preheating current in step 170 may specifically include correcting the current value of the preheating current based on the difference between the test junction and the target test temperature. Specifically, when the difference is a positive number, it indicates that the test junction temperature of the current test is too high, and the current value of the preheating current is reduced by a first preset step length, so that the test junction temperature is reduced. When the difference is negative, the test junction temperature of the test is too small, and the current value of the preheating current is increased by a second preset step length, so that the test junction temperature is increased.
It can be appreciated that the first preset step size and the second preset step size may be the same or different, and the values of the first preset step size and the second preset step size may be set according to actual situations. In an example, the sum of the current values of the first preset step size or the second preset step size and the preheating current can be smaller than the rated current of the semiconductor device, so that the semiconductor device can be protected from being damaged, the testing precision is ensured, and meanwhile, the safety and stability of the test are improved.
In an embodiment, the first preset step size may be positively correlated with the magnitude of the difference value, in other words, the larger the test junction temperature is when the test junction temperature is greater than the target test temperature, the larger the first preset step size is, so as to implement coarse adjustment of the preheating current, so that the test junction temperature can be rapidly close to the target test temperature. When the test junction temperature is larger than the target test temperature, the smaller the test junction temperature is, the smaller the first preset step length is, so that the fine adjustment of the test junction temperature is realized, and the correction of the preheating current can be more accurate. The second preset step size may be inversely related to the magnitude of the difference, in other words, the smaller the test junction temperature is when the test junction temperature is less than the target test temperature, the larger the second preset step size is to achieve coarse adjustment of the test junction temperature. When the test junction temperature is smaller than the target test temperature, the larger the test junction temperature is, the smaller the first preset step length is, so that the fine adjustment of the test junction temperature is realized.
By the mode, the preheating current can be dynamically adjusted, and the efficiency and the accuracy of preheating current correction are improved.
In one example, specific values of the first preset step size and the second preset step size may be determined according to the magnitude of the difference. For example, the current value of the preheating current is 10A, the target test temperature is 175 ℃, and the test junction temperature is 165 ℃. In the test, the test junction temperature is less than the target test temperature, and the difference between the test junction temperature and the target test temperature is-10 ℃. At this time, the current value of the preheating current can be increased by taking the current value required for temperature rise by 10 ℃ as a second preset step length, so that the test junction temperature in the next test is raised to 175 ℃.
It will be appreciated that, in other examples, the increasing/decreasing magnitudes of the first preset step size and the second preset step size may be set according to actual requirements, for example, each time the difference value changes by 1 ℃, the first preset step size or the second preset step size may be increased/decreased by 1A, which is not limited herein.
Specific embodiments of the steps 130 and 140 are described in detail below.
In one embodiment, as shown in fig. 2, the step 130, that is, the step of obtaining the current junction temperature of the semiconductor device, includes:
Step 131, obtaining the K coefficient of the semiconductor device.
The K-factor is used to characterize the relationship between the device junction temperature and the device voltage. Specifically, before the steps of the method for testing the high temperature characteristics of the semiconductor device according to the embodiment of the present application are performed, the voltage drop generated by the body diode when the semiconductor device passes through the small signal current at different junction temperatures may be tested by using a K coefficient measurement method conventional in the art, so as to generate the K coefficient of the semiconductor device, and the K coefficient measurement method is not limited and described in detail herein.
Step 132, collecting the voltage across the body diode in the semiconductor device.
In response to the application of a small signal current to the semiconductor device, a voltage across a body diode in the semiconductor device is acquired using a measurement instrument.
And step 133, determining to obtain the current junction temperature of the semiconductor device based on the K coefficient and the voltage across the body diode.
And based on the relation between the junction temperature of the device and the voltage of the device, which is characterized by the K coefficient, finding the junction temperature of the device corresponding to the voltage at two ends of the body diode, and taking the junction temperature as the current junction temperature of the semiconductor device.
After determining the current junction temperature of the semiconductor device through the above steps 131-133, it is necessary to further predict the test junction temperature of the semiconductor device at the test ending moment through the above step 140. Specifically, the test junction temperature of the semiconductor device can be predicted based on the temperature difference prediction coefficient, the current junction temperature and the test end time period of the semiconductor device, and the specific processing procedure is as follows in the flow shown in fig. 3.
Step 141, determining a temperature difference prediction coefficient based on a first junction temperature of the semiconductor device at a first time, a second junction temperature at a second time, and a time interval between the first time and the second time.
The semiconductor device is applied with a small signal current at a first time and a second time, or the first time and the second time are two times after the small signal current is applied to the semiconductor device. Specifically, since a small signal current is applied to the semiconductor device, a first junction temperature of the semiconductor device at a first time and a second junction temperature of the semiconductor device at a second time may be determined based on the K coefficient and the voltage across the body diode.
In one embodiment, the temperature difference prediction coefficient may be determined using the following equation (2):
Wherein, in the above formula (2), Δt (T 2) refers to the difference between the first junction temperature and the second junction temperature, and T 2 refers to the time interval between the first time and the second time.
And 142, determining a junction temperature change value based on the temperature difference prediction coefficient and the test ending time.
The temperature difference prediction coefficient of the semiconductor device can represent the thermal diffusion degree of the semiconductor device, and the temperature change value generated by the semiconductor device after the test is finished can be determined through the temperature difference prediction coefficient of the semiconductor device and the test finishing time.
In one embodiment, the junction temperature change value may be determined using the following equation (1):
In the above formula (1), Δt (T 1) means a junction temperature change value, and T 1 means a test end period.
And step 143, determining the test junction temperature of the semiconductor device at the moment of ending the test based on the junction temperature change value and the current junction temperature.
The temperature change value generated by the semiconductor device after the test is finished and the current junction temperature of the semiconductor device at the current time are utilized to accurately deduce the test junction temperature at the moment of the test finishing. For example, the current junction temperature determined by the above step 130 is 160 ℃, and the temperature change value calculated by the above step 141 is 10 ℃, so that the test junction temperature is 160+10=170 ℃.
According to the embodiment, the temperature difference prediction coefficient of the semiconductor device is determined firstly, then the temperature change generated by the semiconductor device after the test is finished is determined based on the temperature difference prediction coefficient and the test finishing time, and then the current junction temperature is combined for further deduction to obtain the test junction temperature, so that the prediction precision of the test junction temperature can be improved.
An embodiment of the present application also provides an electronic device, where the electronic device includes a processor and a memory, where the memory stores at least one instruction or at least one program, and the at least one instruction or the at least one program is loaded and executed by the processor to implement a method for testing a high temperature characteristic of a semiconductor device as provided in the above method embodiment.
The memory may be used to store software programs and modules that the processor executes to perform various functional applications and data processing by executing the software programs and modules stored in the memory. The memory may mainly include a storage program area which may store an operating system, application programs required for functions, and the like, and a storage data area which may store data created according to the use of the device, and the like. In addition, the memory may include high-speed random access memory, and may also include non-volatile memory, such as at least one magnetic disk storage device, flash memory device, or other volatile solid-state storage device. Accordingly, the memory may also include a memory controller to provide access to the memory by the processor.
In a specific embodiment, fig. 4 shows a schematic structural diagram of an electronic device provided for implementing an embodiment of the present application, where the electronic device may be a computer terminal, a mobile terminal or other devices.
As shown in fig. 4, an embodiment of the present application provides an electronic device 400, including a processor 401 and a memory 402, in which memory 402 computer program instructions are stored, wherein the computer program instructions, when executed by the processor, cause the processor 401 to execute the method for testing the high temperature characteristics of a semiconductor device as described in the above embodiment.
Further, as shown in fig. 4, the electronic device 400 further includes a network interface 403, an input device 404, a hard disk 405, and a display device 406.
The interfaces and devices described above may be interconnected by a bus architecture. The bus architecture may be a bus and bridge that may include any number of interconnects. One or more Central Processing Units (CPUs), represented in particular by processor 401, and various circuits of one or more memories, represented by memory 402, are connected together. The bus architecture may also connect various other circuits together, such as peripheral devices, voltage regulators, and power management circuits. It is understood that a bus architecture is used to enable connected communications between these components. The bus architecture includes, in addition to a data bus, a power bus, a control bus, and a status signal bus, all of which are well known in the art and therefore will not be described in detail herein.
The network interface 403 may be connected to a network (e.g., the internet, a local area network, etc.), and may obtain relevant data from the network and store the relevant data in the hard disk 405.
The input device 404 may receive various instructions entered by an operator and send the instructions to the processor 401 for execution. The input device 404 may include a keyboard or pointing device such as a mouse, trackball (trackball), touch pad, or touch screen, among others.
The display device 406 may display a result obtained by the processor 401 executing the instruction.
The memory 402 is used for storing programs and data necessary for the operation of the operating system, and data such as intermediate results in the calculation process of the processor 401.
It will be appreciated that the memory 402 in embodiments of the application can be either volatile memory or nonvolatile memory, or can include both volatile and nonvolatile memory. The nonvolatile memory may be Read Only Memory (ROM), programmable Read Only Memory (PROM), erasable Programmable Read Only Memory (EPROM), electrically Erasable Programmable Read Only Memory (EEPROM), or flash memory, among others. Volatile memory can be Random Access Memory (RAM), which acts as external cache memory. The memory 402 of the apparatus and methods described herein is intended to comprise, without being limited to, these and any other suitable types of memory.
In some implementations, memory 402 stores elements, executable modules or data structures, or a subset thereof, or an extended set thereof, operating system 4021 and application programs 4022.
The operating system 4021 includes various system programs, such as a framework layer, a core library layer, a driver layer, and the like, for implementing various basic services and processing hardware-based tasks. The application programs 4022 include various application programs such as a Browser (Browser) and the like for realizing various application services. A program for implementing the method of the embodiment of the present application may be included in the application program 4022.
The above-described processor 401 executes the high-temperature characteristic test method of the semiconductor device described in the above-described embodiment when calling and executing the application program and data stored in the memory 402, specifically, the program or instructions stored in the application program 4022.
The method disclosed in the above embodiment of the present application may be applied to the processor 401 or implemented by the processor 401. The processor 401 may be an integrated circuit chip having signal processing capabilities. In implementation, the steps of the above method may be performed by integrated logic circuits of hardware in the processor 401 or by instructions in the form of software. The processor 401 described above may be a general purpose processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), an off-the-shelf programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, and may implement or perform the methods, steps, and logic blocks disclosed in the embodiments of the present application. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like. The steps of the method disclosed in connection with the embodiments of the present application may be embodied directly in the execution of a hardware decoding processor, or in the execution of a combination of hardware and software modules in a decoding processor. The software modules may be located in a random access memory, flash memory, read only memory, programmable read only memory, or electrically erasable programmable memory, registers, etc. as well known in the art. The storage medium is located in a memory 402, and the processor 401 reads the information in the memory 402 and, in combination with its hardware, performs the steps of the above method.
It is to be understood that the embodiments described herein may be implemented in hardware, software, firmware, middleware, microcode, or a combination thereof. For a hardware implementation, the processing units may be implemented within one or more Application Specific Integrated Circuits (ASICs), digital Signal Processors (DSPs), digital Signal Processing Devices (DSPDs), programmable Logic Devices (PLDs), field Programmable Gate Arrays (FPGAs), general purpose processors, controllers, micro-controllers, microprocessors, other electronic units designed to perform the functions described herein, or a combination thereof.
For a software implementation, the techniques described herein may be implemented with modules (e.g., procedures, functions, and so on) that perform the functions described herein. The software codes may be stored in a memory and executed by a processor. The memory may be implemented within the processor or external to the processor.
In addition, an embodiment of the present application also provides a computer-readable storage medium storing a computer program, which when executed by a processor, causes the processor to execute the method for testing the high-temperature characteristics of the semiconductor device as described in the above embodiment.
In the several embodiments provided in the present application, it should be understood that the disclosed methods and apparatus may be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative, e.g., the division of the units is merely a logical function division, and there may be additional divisions when actually implemented, e.g., multiple units or components may be combined or integrated into another system, or some features may be omitted or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be an indirect coupling or communication connection via some interfaces, devices or units, which may be in electrical, mechanical or other form.
In addition, each functional unit in the embodiments of the present application may be integrated in one processing unit, or each unit may be physically included separately, or two or more units may be integrated in one unit. The integrated units may be implemented in hardware or in hardware plus software functional units.
The integrated units implemented in the form of software functional units described above may be stored in a computer readable storage medium. The software functional unit is stored in a storage medium, and includes several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to perform part of the steps of the transceiving method according to the embodiments of the present application. The storage medium includes various media capable of storing program codes, such as a usb disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (Random Access Memory RAM), a magnetic disk, or an optical disk.
While the foregoing is directed to the preferred embodiments of the present application, it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present application, and such modifications and adaptations are intended to be comprehended within the scope of the present application.
Claims (10)
1. A method for testing high temperature characteristics of a semiconductor device, comprising the steps of:
Applying a preheat current to the semiconductor device;
applying a test current and/or a test voltage to the semiconductor device to perform a high temperature characteristic test on the semiconductor device;
applying a small signal current to the semiconductor device in response to the end of the test, and acquiring the current junction temperature of the semiconductor device;
Predicting a test junction temperature of the semiconductor device at a test ending moment based on a temperature difference prediction coefficient of the semiconductor device, the current junction temperature and the test ending time, wherein the test ending time is a time interval between an acquisition time and a test ending time of the current junction temperature, and the temperature difference prediction coefficient represents the thermal diffusion degree of the semiconductor device;
Determining whether the test of the present round is valid based on the test junction temperature and the target test temperature;
If yes, ending the test and generating a test result;
if not, correcting the current value of the preheating current, and returning to the step of applying the preheating current to the semiconductor device.
2. The method of testing high temperature characteristics of a semiconductor device according to claim 1, wherein the step of determining whether the present round of testing is valid based on the test junction temperature and a target test temperature comprises:
determining whether a difference between the test junction temperature and the target test temperature falls within a preset error interval;
If yes, determining that the test of the round is effective;
if not, determining that the test is invalid.
3. The method according to claim 1, wherein the step of correcting the current value of the preheat current includes:
correcting the current value of the preheating current based on the difference between the test junction temperature and the target test temperature;
When the difference value is positive, reducing the current value of the preheating current by a first preset step length; and when the difference value is negative, increasing the current value of the preheating current by a second preset step length.
4. The method for testing the high-temperature characteristics of a semiconductor device according to claim 3, wherein,
The first preset step length is positively correlated with the numerical value of the difference value, and the second preset step length is negatively correlated with the numerical value of the difference value.
5. The method for testing the high temperature characteristics of the semiconductor device according to claim 1, wherein the step of obtaining the current junction temperature of the semiconductor device comprises:
obtaining a K coefficient of the semiconductor device, wherein the K coefficient is used for representing the relation between the junction temperature of the device and the voltage of the device;
Collecting voltages at two ends of a body diode in the semiconductor device;
And determining to obtain the current junction temperature of the semiconductor device based on the K coefficient and the voltage across the body diode.
6. The method according to claim 1, wherein the step of predicting the test junction temperature of the semiconductor device at the test end instant based on the temperature difference prediction coefficient of the semiconductor device, the current junction temperature, and the test end time period, comprises:
Determining the temperature difference prediction coefficient based on a first junction temperature of the semiconductor device at a first time, a second junction temperature of the semiconductor device at a second time, and a time interval between the first time and the second time, wherein the semiconductor device is applied with the small signal current at the first time and the second time;
determining a junction temperature change value based on the temperature difference prediction coefficient and the test ending time;
and determining the test junction temperature of the semiconductor device at the moment of ending the test based on the junction temperature change value and the current junction temperature.
7. The method for testing the high temperature characteristics of the semiconductor device according to claim 6, wherein the step of determining the junction temperature variation value based on the temperature difference prediction coefficient and the test end time period comprises determining the junction temperature variation value using the following formula (1):
wherein, in the above formula (1), Δt (T 1) refers to the junction temperature variation value, X refers to the temperature difference prediction coefficient, and T 1 refers to the test end period.
8. The method for testing the high-temperature characteristics of a semiconductor device according to claim 1, wherein,
The current value of the small signal current is smaller than or equal to the minimum current value required by the semiconductor device to generate heat.
9. An electronic device comprising a processor, and a memory having computer program instructions stored therein,
Wherein the computer program instructions, when executed by the processor, cause the processor to perform the method of testing the high temperature characteristics of a semiconductor device according to any one of claims 1-8.
10. A computer readable storage medium, characterized in that the computer readable storage medium stores computer program instructions, which when executed by a processor, cause the processor to perform the method of testing the high temperature characteristics of a semiconductor device according to any one of claims 1-8.
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| CN107271878A (en) * | 2017-06-14 | 2017-10-20 | 山东阅芯电子科技有限公司 | Pass through the hot properties method of testing and device of electric current heating semiconductor |
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