CN119050181A - Infrared detector and manufacturing method thereof - Google Patents
Infrared detector and manufacturing method thereof Download PDFInfo
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- 238000010521 absorption reaction Methods 0.000 claims abstract description 47
- 229910000673 Indium arsenide Inorganic materials 0.000 claims abstract description 44
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 18
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- 229910052738 indium Inorganic materials 0.000 abstract description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 9
- 229910017115 AlSb Inorganic materials 0.000 description 8
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
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Abstract
The invention discloses an infrared detector and a manufacturing method thereof. The absorption layer of the infrared detector is an N-type InAs/InAsSb superlattice or an N-type InGaAs/InAsSb superlattice, and the barrier layer of the infrared detector is made of an N-type InGaAsSb material. In the infrared detector, the valence band of the InGaAsSb barrier layer is flush with the valence band of the In (Ga) As/InAsSb superlattice absorption region to form an electronic barrier, so that dark current of the device is reduced, and meanwhile, the device has a structure with only In, ga, as, sb elements, and the difficulty In material growth and processing is reduced.
Description
Technical Field
The invention belongs to the technical field of photoelectricity, and particularly relates to an infrared detector and a manufacturing method thereof.
Background
Infrared radiation detection is an important component of infrared technology and is widely applied to the fields of thermal imaging, satellite remote sensing, gas monitoring, optical communication, spectral analysis and the like. The antimonide type II superlattice infrared detector is considered as one of the most ideal choices for preparing the third-generation infrared detector due to the characteristics of good uniformity, low Auger recombination rate, large wavelength adjustment range and the like, and the batch production stage is already carried out at present.
Antimonide type superlattices are mainly divided into two types, one is InAs/GaSb superlattice and the other is InAs/InAsSb superlattice. The InAs/InAsSb superlattice has the advantages of long minority carrier lifetime, low dark current, simple growth and certain advantages compared with the InAs/GaSb superlattice, particularly in a medium wave detection band (3-5 microns). But the InAs/InAsSb superlattice must cooperate with an electron barrier layer to achieve high performance. An ideal electron barrier refers to the existence of a barrier for electron transport and no barrier for hole transport at the interface of two materials, which requires that the bandwidth of the barrier be greater than the absorption region, and that the valence band of the barrier be flush with the absorption region.
In the prior art, the electron barriers of InAs/InAsSb superlattice are all AlSb-containing materials such as AlAsSb, alGaAsSb or AlAsSb/InAsSb superlattice and the like. However, the Al-containing material is extremely easy to oxidize, which increases the growth and processing difficulty of the infrared detector and affects the stability of the device. And the AlSb-containing material is difficult to prepare by Metal Organic Chemical Vapor Deposition (MOCVD) which is a mainstream material growth method in the industry, and can only be prepared by Molecular Beam Epitaxy (MBE), so that the cost is high, and the large-scale application and popularization of the AlSb-containing material are limited.
Disclosure of Invention
In order to solve the technical problems in the prior art, the embodiment of the invention provides an infrared detector which is based on InAs/InAsSb superlattice, but does not contain AlSb in a barrier layer and can be grown by MOCVD and a manufacturing method thereof.
According to the infrared detector provided by the embodiment of the invention, the absorption layer is an N-type InAs/InAsSb superlattice or an N-type InGaAs/InAsSb superlattice, and the barrier layer of the infrared detector is made of an N-type InGaAsSb material.
In one example of the infrared detector provided in the above aspect, the bandwidth of the barrier layer is greater than the bandwidth of the absorption layer, and the valence band of the barrier layer is flush with the valence band of the absorption layer.
In one example of the infrared detector provided in the above aspect, the infrared detector further includes a substrate, a first contact layer, a second contact layer, a first electrode, and a second electrode, where the first contact layer, the absorption layer, the barrier layer, and the second contact layer are sequentially stacked on the substrate in a direction away from the substrate, the first electrode is in contact with the first contact layer, and the second electrode is disposed on the second contact layer.
In one example of the infrared detector provided in the above aspect, portions of the absorption layer, the barrier layer, and the second contact layer are etched away to form a mesa structure exposing the first contact layer, and the first electrode is disposed on the exposed first contact layer.
In one example of the infrared detector provided in the above aspect, the substrate is an N-type InAs substrate or an N-type GaSb substrate, and/or the first contact layer is an N-type InAs material or an N-type InAsSb material, and/or the second contact layer is a P-type InGaAsSb material or an N-type InAs/InAsSb superlattice.
According to the manufacturing method of the infrared detector, an absorption layer of the infrared detector is manufactured by utilizing an N-type InAs/InAsSb superlattice or an N-type InGaAs/InAsSb superlattice, and a barrier layer of the infrared detector is manufactured by utilizing an N-type InGaAsSb material.
In one example of the method for fabricating an infrared detector provided in the above another aspect, the bandwidth of the barrier layer is greater than the bandwidth of the absorption layer, and the valence band of the barrier layer is flush with the valence band of the absorption layer.
In one example of the method for fabricating the infrared detector provided in the above another aspect, before the fabricating and forming the absorption layer, the fabricating method further includes fabricating and forming a first contact layer on a substrate, fabricating and forming the absorption layer of the infrared detector using an N-type InAs/InAsSb superlattice or an N-type InGaAs/InAsSb superlattice, specifically including fabricating and forming the absorption layer on the first contact layer using an N-type InAs/InAsSb superlattice or an N-type InGaAs/InAsSb superlattice, fabricating and forming a barrier layer of the infrared detector using an N-type InGaAsSb material, specifically including fabricating and forming the barrier layer on the absorption layer using an N-type InGaAsSb material, fabricating and forming a second contact layer on the barrier layer, forming a first electrode in contact with the first contact layer, and forming a second electrode on the second contact layer after fabricating and forming the barrier layer.
In one example of the method for manufacturing the infrared detector provided in the above another aspect, the forming the first electrode in contact with the first contact layer and forming the second electrode on the second contact layer specifically includes partially etching the second contact layer, the barrier layer and the absorption layer to form a mesa structure exposing the first contact layer, depositing the first electrode on the exposed first contact layer, and depositing the second electrode on the second contact layer.
In one example of the method for manufacturing an infrared detector provided in the above another aspect, the substrate is an N-type InAs substrate or an N-type GaSb substrate, and/or the first contact layer is an N-type InAs material or an N-type InAsSb material, and/or the second contact layer is a P-type InGaAsSb material or an N-type InAs/InAsSb superlattice.
The infrared detector provided by the embodiment of the invention has the beneficial effects that the InGaAsSb material is adopted As the electron barrier layer of the In (Ga) As/InAsSb superlattice absorption layer, so that the effect similar to an AlSb barrier layer can be achieved, and the dark current of a device can be effectively reduced. Furthermore, the infrared detector according to the embodiment of the invention does not contain Al, so that the oxidization of Al-containing materials is avoided, and the device structure is provided with only In, ga, as, sb elements, so that the structure is simple, the difficulty in material growth and processing is reduced, and the stability and reliability of the device are improved. Furthermore, the infrared detector according to the embodiment of the invention can be prepared by MOCVD which is a mainstream material growth method in the industry, compared with the conventional preparation method MBE of antimonide detectors, the cost can be greatly reduced, and the yield can be improved.
Drawings
The above and other aspects, features and advantages of embodiments of the present invention will become more apparent from the following description when taken in conjunction with the accompanying drawings in which:
fig. 1 is a schematic structural view of an infrared detector according to an embodiment of the present invention;
FIG. 2 is a schematic illustration of the relative positional alignment of an InGaAs/InAsSb superlattice absorption layer and the conduction band E C and the valence band E V, respectively, of InAs and GaSb materials of an infrared detector in accordance with an embodiment of the invention;
FIG. 3 is a graph comparing 77K dark current with dark current data of a conventional infrared detector, according to one specific example of an infrared detector according to an embodiment of the present invention;
Fig. 4a to 4d are process diagrams of an infrared detector according to an embodiment of the present invention.
Detailed Description
Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention and its practical application so that others skilled in the art will be able to understand the invention for various embodiments and with various modifications as are suited to the particular use contemplated.
As used herein, the term "comprising" and variations thereof mean open-ended terms, meaning "including, but not limited to. The terms "based on", "in accordance with" and the like mean "based at least in part on", "in part in accordance with". The terms "embodiment," one example, "" one embodiment, "and" an embodiment "mean" at least one embodiment. The terms "another embodiment," another example, "" yet another example "mean" at least one other embodiment. The terms "first," "second," and the like, may refer to different or the same object. Other definitions, whether explicit or implicit, may be included below. Unless the context clearly indicates otherwise, the definition of a term is consistent throughout this specification.
It should be noted here that, in order to avoid obscuring the present invention due to unnecessary details, only structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, while other details having little relevance are omitted.
As described In the background, the existing infrared detectors based on In (Ga) As/InAsSb superlattice all employ AlSb-containing materials such As AlAsSb, alGaAsSb or AlAsSb/InAsSb superlattice and the like. Because the Al-containing material is extremely easy to oxidize, the growth and processing difficulty of the infrared detector are increased, and the stability of the device is affected. And the AlSb-containing material is difficult to prepare by MOCVD (metal organic chemical vapor deposition) which is a mainstream material growth method in the industry, and can only be prepared by MBE, but the MBE has high cost and low yield and limits the large-scale application and popularization of the MBE.
Therefore, in order to solve the above technical problems, an infrared detector and a method for manufacturing the same are provided according to an embodiment of the present invention. In the infrared detector, an InGaAsSb material without Al is used as an electron barrier layer, and an InAs/InAsSb superlattice or an InGaAs/InAsSb superlattice is used as an absorption layer. The core idea of the invention is shown in fig. 2. Referring to fig. 2, inAs and GaSb constitute a type II band arrangement, i.e., the valence band of GaSb (E V) is higher than the conduction band of InAs (E C), while on the other hand, an In (Ga) As/InAsSb superlattice forms a microstrip (As shown by the dashed line In fig. 2), the superlattice microstrip E V must be between E V of InAs and E V of GaSb according to the quantum mechanical principle, since the valence band E V of the InGaAsSb bulk material can be continuously tuned from E V of InAs to E V of GaSb, so that it can be realized that its valence band is level with the valence band of the In (Ga) As/InAsSb superlattice absorption layer and that its effective bandwidth is greater than that of the In (Ga) As/InAsSb superlattice, thereby realizing an ideal electron barrier.
Therefore, the embodiment of the invention provides the In (Ga) As/InAsSb antimonide superlattice infrared detector without Al, dark current can be well restrained by adopting the InGaAsSb electronic barrier, and the device structure has only In, ga, as, sb elements, so that the structure is simple, the difficulty of material growth and processing is reduced, and the stability and reliability of the device are improved.
The structure of the infrared detector according to the embodiment of the present invention is described in detail below. Fig. 1 is a schematic structural view of an infrared detector according to an embodiment of the present invention.
Referring to fig. 1, the infrared detector according to the embodiment of the invention comprises a substrate 10, a first contact layer 11, an absorption layer 12, a barrier layer 13 and a second contact layer 14 which are arranged on the substrate 10 from bottom to top (namely, are arranged in a mode of being sequentially stacked along a direction away from the substrate 10), a first electrode 15 and a second electrode 16, wherein the first electrode 15 is contacted with the first contact layer 11, and the second electrode 16 is arranged on the second contact layer 14.
In one example, the substrate 10 may be an N-type InAs substrate or an N-type GaSb substrate.
In an example, the first contact layer 11 may be N-type InAs or N-type InAsSb material, the thickness of the first contact layer 11 may be 0.2 μm to 0.5 μm, the doping source may be Si or Te, and the doping concentration may be 1×10 18cm-3~1×1019cm-3.
In one example, the absorption layer 12 may be an N-type InAs/InAsSb superlattice or an N-type InGaAs/InAsSb superlattice, the thickness of the absorption layer 12 may be 2 μm to 5 μm, the doping source may be Si or Te, the doping concentration may be 1×10 15cm-3~1×1017cm-3, and the corresponding bandwidth may be 0.2ev to 0.3ev.
In one example, the barrier layer 13 may be an N-type InGaAsSb material, the thickness of the barrier layer 13 may be 0.1 μm to 0.5 μm, the doping source may be Si or Te, the doping concentration may be 1×10 15cm-3~1×1017cm-3, and the corresponding bandwidth may be 0.4ev to 0.6ev.
In one example, the second contact layer 14 may Be a P-type InGaAsSb material or an N-type InAs/InAsSb superlattice, the thickness of the second contact layer 14 may Be 0.2 μm to 0.5 μm, the doping source may Be Zn, be, si or Te, the doping concentration may Be 1×10 18cm-3~1×1019cm-3, and the corresponding bandwidth may Be 0.2ev to 0.6ev.
The energy band of the infrared detector according to the embodiment of the present invention is described in detail below. The existing infrared detectors based on In (Ga) As/InAsSb superlattice all adopt AlSb-containing materials As barrier layers. In the infrared detector according to the embodiment of the present invention, the InGaAsSb material is used as an electron barrier of the InGaAs/InAsSb superlattice, and the band arrangement and physical principle thereof are as shown in fig. 2.
Fig. 2 is a schematic diagram of a relative positional alignment of the InGaAsSb barrier layer 13 and the InGaAs/InAsSb superlattice absorption layer 12 of an infrared detector, and the conduction band E C and the valence band E V of the InAs and GaSb materials, respectively, in accordance with an embodiment of the invention.
Referring to fig. 2, the E V position of the In (Ga) As/InAsSb superlattice microstrip is between E V of InAs and E v of GaSb, and the valence band E V position of the InGaAsSb material can be continuously tuned from E V of InAs to E V of GaSb, so that it can be achieved that its valence band E V is level with the In (Ga) As/InAsSb superlattice absorber layer E V and the effective bandwidth is greater than that of the In (Ga) As/InAsSb superlattice. Thus, the InGaAsSb material can be used as an ideal electron barrier of an InGaAs/InAsSb superlattice. Through the flexible combination of the superlattice component and the thickness of the absorption layer, the absorption wavelength can be flexibly adjusted between 4 micrometers and 6 micrometers, and the range of medium wave infrared is covered.
Fig. 3 is a graph showing dark current data of a conventional infrared detector and 77K dark current of a specific example of an infrared detector according to an embodiment of the present invention. Wherein in one specific example of an infrared detector according to an embodiment of the present invention, the InGaAs/InAsSb superlattice absorption layer 12 has a thickness of 2 μm and the InGaAsSb barrier layer 13 has a thickness of 200nm. By contrast, an infrared detector is provided in which the absorber layer is also an InGaAs/InAsSb superlattice, but the barrier layer is an AlGaAsSb material 200nm thick. As shown in fig. 3, the InGaAsSb barrier layer is adopted, the 77K dark current is only 4.3×10 -9A/cm2 under the bias of-0.1V, while the conventional AlGaAsSb barrier layer is adopted, the energy band alignment is difficult to control due to poor material quality, and the dark current is as high as 2.3×10 -3A/cm2, so that the InGaAsSb barrier layer has great advantage in dark current inhibition compared with the conventional technology.
The following describes in detail the process of the infrared detector according to the embodiment of the present invention. Fig. 4a to 4d are process diagrams of an infrared detector according to an embodiment of the present invention.
Referring to fig. 4a, a substrate 10 is provided. In one example, the substrate 10 may be an N-type InAs substrate or an N-type GaSb substrate.
Referring to fig. 4b, a first contact layer 11, an absorption layer 12, a barrier layer 13, and a second contact layer 14, which form a stack, are sequentially grown on the substrate 10 from bottom to top.
In one example, a Metal Organic Chemical Vapor Deposition (MOCVD) process is used to sequentially grow a first contact layer 11, an absorption layer 12, a barrier layer 13, and a second contact layer 14 on the substrate 10 from bottom to top. Specifically, metal organic chemical vapor deposition MOCVD is used as a growth process, the growth source is TMIn, TMGa, TMSb and AsH 3, the n-type doping source is SiH 4, the p-type doping source is DEZn, the growth temperature is set to be about 600 ℃, and the pressure of the reaction chamber is set to be 200Torr. After the high temperature treatment removes impurities on the surface of the substrate 10, growth is sequentially performed on the substrate 10 from below:
(1) A first contact layer 11. In one example, the first contact layer 11 is an N-type InAs material, having a thickness of 0.2 μm, doped with Si, and a doping concentration of 1×10 18cm-3.
(2) An absorbent layer 12. In one example, the absorber layer 12 is an N-type InGaAs/InAsSb superlattice, having a thickness of 2 μm, doped with Si, a doping concentration of 5×10 15cm-3, and a corresponding bandwidth of 0.2eV.
(3) A barrier layer 13. In one example, the barrier layer 13 is an N-type InGaAsSb material, 0.1 μm thick, si doped, 2×10 15cm-3 doped, corresponding to a bandwidth of 0.4eV.
(4) A second contact layer 14. In one example, the second contact layer 14 is a P-type InGaAsSb material having a thickness of 0.2 μm, zn-doped, a doping concentration of 1×10 18cm-3, and a corresponding bandwidth of 0.6eV.
Here, an MOCVD process was employed as a growth process of the first contact layer 11, the absorption layer 12, the barrier layer 13, and the second contact layer 14, and the infrared detector cut-off wavelength was obtained to be about 6 μm. Due to the fact that the MOCVD process is high in productivity and low in cost, the cost can be reduced by adopting the process, and the cost performance of the infrared detector is improved.
In another example, a Molecular Beam Epitaxy (MBE) process is used As the growth process, the growth source is solid elemental sources Ga, in, as, and Sb, the n-type dopant source is Te, and the growth temperature is about 400 ℃. After the substrate 10 is subjected to degassing and impurity removal, sequentially growing on the substrate 10 from bottom to top:
(1) A first contact layer 11. In one example, the first contact layer 11 is an N-type InAsSb material, having a thickness of 0.5 μm, doped with Te, and a doping concentration of 1×10 19cm-3.
(2) An absorbent layer 12. In one example, the absorber layer 12 is an N-type InAs/InAsSb superlattice, 5 μm thick, te doped, 1X 10 17cm-3 doped, corresponding to a bandwidth of 0.3eV.
(3) A barrier layer 13. In one example, the barrier layer 13 is an N-type InGaAsSb material, 0.5 μm thick, doped with Te, 5×10 16cm-3 doped with a corresponding bandwidth of 0.6eV.
(4) A second contact layer 14. In one example, the second contact layer 14 is an N-type InAs/InAsSb superlattice having a thickness of 0.5 μm, a doping concentration of Te of 1×10 19cm-3, and a corresponding bandwidth of 0.3eV.
In the case of using the MBE process as the growth process, the cut-off wavelength of the obtained infrared detector is about 4 μm. As the MBE process can form a steep interface, the performance of the short wave infrared detector obtained by the process is higher.
Referring to fig. 4c, the second contact layer 14, the barrier layer 13, and the absorption layer 12 are partially etched to form a mesa structure a exposing the first contact layer 11.
In one example, the second contact layer 14, the barrier layer 13, and the absorption layer 12 are partially etched using an Inductively Coupled Plasma (ICP) process, so that the first contact layer 11 is exposed, thereby forming a mesa structure a.
In another example, the second contact layer 14, the barrier layer 13, and the absorption layer 12 are partially etched by a wet etching process, so that the first contact layer 11 is exposed, thereby forming a mesa structure a.
Referring to fig. 4d, a first electrode 15 is deposited on the first contact layer 11 and a second electrode 16 is deposited on the second contact layer 14.
In one example, the first electrode 15 is deposited on the exposed first contact layer 11 and the second electrode 16 is deposited on the second contact layer 14 using an electron beam evaporation process. Wherein, the first electrode 15 and the second electrode 16 are both Ti (500A)/Pt (500A)/Au (3000A) combinations.
In another example, the first electrode 15 is deposited on the exposed first contact layer 11 and the second electrode 16 is deposited on the second contact layer 14 using an electron beam evaporation process. Wherein, the first electrode 15 and the second electrode 16 are both Ti (200A)/Pt (400A)/Au (2000A) combinations.
In summary, according to the infrared detector and the manufacturing method thereof provided by the embodiment of the invention, the device structure adopts the In (Ga) As/InAsSb superlattice absorption region, but the barrier layer is completely free of Al, so that oxidation of Al-containing materials is avoided, only In, ga, as, sb elements are contained In the device structure, the structure is simple, the difficulty In material growth and processing is reduced, and the infrared detector can be manufactured by MOCVD (metal organic chemical vapor deposition) which is a mainstream material growth method In the industry, compared with the conventional manufacturing method MBE of antimonide detectors, the cost can be greatly reduced, and the yield is improved.
The terms "exemplary," "example," and the like, as used throughout this specification, mean "serving as an example, instance, or illustration," and do not mean "preferred" or "advantageous" over other embodiments. The detailed description includes specific details for the purpose of providing an understanding of the described technology. However, the techniques may be practiced without these specific details. In some instances, well-known structures and devices are shown in block diagram form in order to avoid obscuring the concepts of the described embodiments.
The alternative implementation of the embodiment of the present invention has been described in detail above with reference to the accompanying drawings, but the embodiment of the present invention is not limited to the specific details of the foregoing implementation, and various simple modifications may be made to the technical solutions of the embodiment of the present invention within the scope of the technical concept of the embodiment of the present invention, and these simple modifications all fall within the protection scope of the embodiment of the present invention.
The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. The infrared detector is characterized in that an absorption layer (12) of the infrared detector is an N-type InAs/InAsSb superlattice or an N-type InGaAs/InAsSb superlattice, and a barrier layer (13) of the infrared detector is made of an N-type InGaAsSb material.
2. The infrared detector according to claim 1, characterized in that the bandwidth of the barrier layer (13) is larger than the bandwidth of the absorption layer (12), and that the valence band of the barrier layer (13) is flush with the valence band of the absorption layer (12).
3. The infrared detector according to claim 1 or 2, further comprising a substrate (10), a first contact layer (11), a second contact layer (14), a first electrode (15) and a second electrode (16), wherein the first contact layer (11), the absorption layer (12), the barrier layer (13), the second contact layer (14) are sequentially stacked on the substrate (10) in a direction away from the substrate (10), the first electrode (15) is in contact with the first contact layer (11), and the second electrode (16) is disposed on the second contact layer (14).
4. An infrared detector according to claim 3, characterized in that portions of the absorption layer (12), the barrier layer (13) and the second contact layer (14) are etched away to form a mesa structure (a) exposing the first contact layer (11), the first electrode (15) being arranged on the exposed first contact layer (11).
5. An infrared detector according to claim 3, characterized in that the substrate (10) is an N-type InAs substrate or an N-type GaSb substrate, and/or the first contact layer (11) is an N-type InAs material or an N-type InAsSb material, and/or the second contact layer (14) is a P-type InGaAsSb material or an N-type InAs/InAsSb superlattice.
6. A method of fabricating an infrared detector, comprising:
an absorption layer (12) of the infrared detector is manufactured and formed by utilizing an N-type InAs/InAsSb superlattice or an N-type InGaAs/InAsSb superlattice;
And manufacturing a barrier layer (13) for forming the infrared detector by using an N-type InGaAsSb material.
7. The method of manufacturing an infrared detector according to claim 6, characterized in that the bandwidth of the barrier layer (13) is larger than the bandwidth of the absorption layer (12), and that the valence band of the barrier layer (13) is flush with the valence band of the absorption layer (12).
8. The method for manufacturing an infrared detector as set forth in claim 6 or 7, wherein,
The manufacturing method further comprises the steps of manufacturing and forming a first contact layer (11) on a substrate (10) before manufacturing and forming the absorption layer (12);
The manufacturing of the absorption layer (12) of the infrared detector by utilizing the N-type InAs/InAsSb superlattice or the N-type InGaAs/InAsSb superlattice specifically comprises the steps of manufacturing the absorption layer (12) on the first contact layer (11) by utilizing the N-type InAs/InAsSb superlattice or the N-type InGaAs/InAsSb superlattice;
The manufacturing of the barrier layer (13) for forming the infrared detector by using the N-type InGaAsSb material specifically comprises the steps of manufacturing the barrier layer (13) on the absorption layer (12) by using the N-type InGaAsSb material;
after the barrier layer (13) is formed, the manufacturing method further comprises the steps of manufacturing a second contact layer (14) on the barrier layer (13), forming a first electrode (15) in contact with the first contact layer (11), and depositing a second electrode (16) on the second contact layer (14).
9. The method for manufacturing an infrared detector according to claim 8, wherein the forming the first electrode (15) in contact with the first contact layer (11), and the forming the second electrode (16) on the second contact layer (14) specifically includes:
-partially etching the second contact layer (14), the barrier layer (13) and the absorber layer (12) to form a mesa structure (a) exposing the first contact layer (11);
A first electrode (15) is deposited on the exposed first contact layer (11), and a second electrode (16) is deposited on the second contact layer (14).
10. Method of fabricating an infrared detector according to claim 8, characterized in that the substrate (10) is an N-type InAs substrate or an N-type GaSb substrate and/or the first contact layer (11) is an N-type InAs material or an N-type InAsSb material and/or the second contact layer (14) is a P-type InGaAsSb material or an N-type InAs/InAsSb superlattice.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119907317A (en) * | 2025-01-09 | 2025-04-29 | 中国科学院半导体研究所 | Short-wave dual-band infrared detector based on indium phosphide substrate and preparation method thereof |
| CN120152401A (en) * | 2025-05-15 | 2025-06-13 | 苏州晶歌半导体有限公司 | Infrared detector and method for manufacturing the same |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130240835A1 (en) * | 2012-03-13 | 2013-09-19 | Fujitsu Limited | Semiconductor device and receiver |
| CN105932092A (en) * | 2016-06-13 | 2016-09-07 | 中国科学院半导体研究所 | Single-barrier type InGaAsSb infrared detector |
| CN110959234A (en) * | 2017-07-17 | 2020-04-03 | 统雷有限公司 | Mid-Infrared Vertical Cavity Lasers |
| CN113646906A (en) * | 2019-04-09 | 2021-11-12 | 杜鹏 | Superlattice absorbers for detectors |
| US20230058205A1 (en) * | 2021-08-20 | 2023-02-23 | The Board Of Regents Of The University Of Oklahoma | Interband Cascade Infrared Photodetectors and Methods of Use |
| CN116387381A (en) * | 2022-12-26 | 2023-07-04 | 苏州晶歌半导体有限公司 | Infrared detector and its manufacturing method |
| CN118658910A (en) * | 2024-08-16 | 2024-09-17 | 苏州晶歌半导体有限公司 | Superlattice materials and infrared detectors for infrared detection |
-
2024
- 2024-10-28 CN CN202411507907.7A patent/CN119050181A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130240835A1 (en) * | 2012-03-13 | 2013-09-19 | Fujitsu Limited | Semiconductor device and receiver |
| CN105932092A (en) * | 2016-06-13 | 2016-09-07 | 中国科学院半导体研究所 | Single-barrier type InGaAsSb infrared detector |
| CN110959234A (en) * | 2017-07-17 | 2020-04-03 | 统雷有限公司 | Mid-Infrared Vertical Cavity Lasers |
| CN113646906A (en) * | 2019-04-09 | 2021-11-12 | 杜鹏 | Superlattice absorbers for detectors |
| US20230058205A1 (en) * | 2021-08-20 | 2023-02-23 | The Board Of Regents Of The University Of Oklahoma | Interband Cascade Infrared Photodetectors and Methods of Use |
| CN116387381A (en) * | 2022-12-26 | 2023-07-04 | 苏州晶歌半导体有限公司 | Infrared detector and its manufacturing method |
| CN118658910A (en) * | 2024-08-16 | 2024-09-17 | 苏州晶歌半导体有限公司 | Superlattice materials and infrared detectors for infrared detection |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119907317A (en) * | 2025-01-09 | 2025-04-29 | 中国科学院半导体研究所 | Short-wave dual-band infrared detector based on indium phosphide substrate and preparation method thereof |
| CN120152401A (en) * | 2025-05-15 | 2025-06-13 | 苏州晶歌半导体有限公司 | Infrared detector and method for manufacturing the same |
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