CN119036312A - Shaping sheet for dressing chamfering grinding wheel of semiconductor wafer and preparation method thereof - Google Patents
Shaping sheet for dressing chamfering grinding wheel of semiconductor wafer and preparation method thereof Download PDFInfo
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- CN119036312A CN119036312A CN202411525073.2A CN202411525073A CN119036312A CN 119036312 A CN119036312 A CN 119036312A CN 202411525073 A CN202411525073 A CN 202411525073A CN 119036312 A CN119036312 A CN 119036312A
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- resin
- grinding wheel
- dressing
- semiconductor wafer
- shaping sheet
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- 238000000227 grinding Methods 0.000 title claims abstract description 92
- 238000007493 shaping process Methods 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 67
- 239000002245 particle Substances 0.000 claims abstract description 67
- 239000000805 composite resin Substances 0.000 claims abstract description 48
- 239000010431 corundum Substances 0.000 claims abstract description 42
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 42
- 229920005989 resin Polymers 0.000 claims abstract description 39
- 239000011347 resin Substances 0.000 claims abstract description 39
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052863 mullite Inorganic materials 0.000 claims abstract description 26
- 238000002156 mixing Methods 0.000 claims abstract description 24
- 239000003082 abrasive agent Substances 0.000 claims abstract description 10
- 239000000080 wetting agent Substances 0.000 claims abstract description 8
- 238000001354 calcination Methods 0.000 claims abstract description 3
- 239000002253 acid Substances 0.000 claims abstract 2
- 238000005406 washing Methods 0.000 claims abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 238000007873 sieving Methods 0.000 claims description 13
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 12
- 239000005083 Zinc sulfide Substances 0.000 claims description 12
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 12
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 12
- 239000005011 phenolic resin Substances 0.000 claims description 12
- 229920001568 phenolic resin Polymers 0.000 claims description 12
- 239000011265 semifinished product Substances 0.000 claims description 12
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 12
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 11
- 239000003822 epoxy resin Substances 0.000 claims description 10
- 229920000647 polyepoxide Polymers 0.000 claims description 10
- 229920001721 polyimide Polymers 0.000 claims description 9
- 239000009719 polyimide resin Substances 0.000 claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 9
- 239000011230 binding agent Substances 0.000 claims description 8
- 238000005554 pickling Methods 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 229910052582 BN Inorganic materials 0.000 claims description 7
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 7
- 239000010432 diamond Substances 0.000 claims description 7
- 229910003460 diamond Inorganic materials 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 7
- 238000011010 flushing procedure Methods 0.000 claims description 7
- 238000000265 homogenisation Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 235000019353 potassium silicate Nutrition 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- 238000000967 suction filtration Methods 0.000 claims description 7
- 239000004033 plastic Substances 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 claims description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 3
- 230000032683 aging Effects 0.000 claims description 3
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 3
- 229930003836 cresol Natural products 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 2
- 239000000047 product Substances 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims 1
- 238000009966 trimming Methods 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 5
- 238000005498 polishing Methods 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 6
- 238000000748 compression moulding Methods 0.000 description 6
- 239000004115 Sodium Silicate Substances 0.000 description 5
- 229910052911 sodium silicate Inorganic materials 0.000 description 5
- 238000005299 abrasion Methods 0.000 description 4
- 238000003889 chemical engineering Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/06—Devices or means for dressing or conditioning abrasive surfaces of profiled abrasive wheels
- B24B53/07—Devices or means for dressing or conditioning abrasive surfaces of profiled abrasive wheels by means of forming tools having a shape complementary to that to be produced, e.g. blocks, profile rolls
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
- B24D3/342—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties incorporated in the bonding agent
- B24D3/344—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties incorporated in the bonding agent the bonding agent being organic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
- B24D3/346—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties utilised during polishing, or grinding operation
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
The invention provides a shaping sheet for dressing a chamfering grinding wheel of a semiconductor wafer and a preparation method thereof, and relates to the technical field of resin polishing materials. The shaping sheet for dressing the semiconductor wafer chamfering grinding wheel is made of a resin composite grinding material, the resin composite grinding material is prepared by mixing composite resin, a wetting agent, auxiliary materials, modified corundum and graded particle size abrasive materials, wherein the modified corundum is prepared by calcining mullite particles with the particle size of 1-3mm after mixed acid washing. The invention overcomes the defects of the prior art, ensures the trimming effect of materials on the resin bond grinding wheel by combining various grinding materials through resin, ensures the fineness of final grinding and prolongs the service life of the grinding wheel.
Description
Technical Field
The invention relates to the technical field of resin polishing materials, in particular to a shaping sheet for dressing a chamfering grinding wheel of a semiconductor wafer and a preparation method thereof.
Background
The existing wafer chamfering process comprises chamfering rough grinding processing and chamfering fine grinding processing, wherein the chamfering fine grinding processing is performed by using a resin bond grinding wheel, the grinding wheel is softer in material quality, easy to wear, and capable of changing the groove shape after wear and incapable of being used, so that the grinding wheel needs to be replaced frequently, the processing efficiency is low, and the grinding wheel is uneconomical due to higher price.
The resin bond grinding wheel is high in direct replacement cost and can also cause great waste, so that the groove shape of the deformed resin bond grinding wheel can be trimmed through a certain polishing material at the present stage, so that wafer chamfering processing can be continuously carried out, the replacement frequency of the resin bond grinding wheel can be effectively reduced, but when the groove shape of the resin bond grinding wheel is polished, if the material is too hard, cracks can be formed in grinding of the grinding wheel, if the material is too soft, the grinding is easy to be incomplete, the effect of subsequent wafer chamfering processing is affected, and therefore, a certain abrasive is selected, so that the resin bond grinding wheel is a feasible direction.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides the shaping sheet for trimming the semiconductor wafer chamfering grinding wheel and the preparation method thereof, which ensure the trimming effect of materials on the resin bond grinding wheel by combining various grinding materials through resin, ensure the fineness of final polishing and prolong the service life of the grinding wheel.
In order to achieve the above object, the technical scheme of the present invention is realized by the following technical scheme:
The shaping sheet for dressing the chamfering grinding wheel of the semiconductor wafer is made of a resin composite grinding material, wherein the resin composite grinding material comprises, by weight, 20-35 parts of composite resin, 0.5-3 parts of a wetting agent, 10-16 parts of auxiliary materials, 2-6 parts of modified corundum and 30-40 parts of graded particle size grinding materials, the modified corundum is prepared by calcining and crushing mullite particles with the particle size of 1-3mm after mixing and pickling, the particles with the particle size of 10-30 mu m in the graded particle size grinding materials account for 15% -25% of the total amount, the particles with the particle size of 30-60 mu m account for 40% -50% of the total amount, and the particle size of the rest particles is 60-150 mu m.
Preferably, the composite resin is polyimide resin, phenolic resin and epoxy resin with the mass ratio of 3-5:4-6:1-2.
Preferably, the wetting agent is any one or more of water glass, liquid phenolic resin, cresol and paste liquid.
Preferably, the auxiliary material is any one or more of chromium oxide, zinc sulfide, ferric oxide and calcium fluoride.
Preferably, the graded particle size abrasive is obtained by mixing diamond, cubic boron nitride and silicon carbide according to the mass ratio of 6-8:2-4:1-3.
Preferably, the preparation method of the modified corundum comprises the following steps:
S1, pickling mullite grains with the grain diameter of 10-30mm with 13% hydrofluoric acid for 10-20min, filtering, repeatedly flushing with clear water for 2-3 times, and drying to obtain pickled mullite grains for later use;
S2, adding corundum powder with the particle size of 1-3mm and the pickled mullite particles into clear water according to the mass ratio of 1-3:1, carrying out ultrasonic homogenization, carrying out suction filtration, then placing the mixture at 1300-1350 ℃ for sintering treatment for 15-30min, taking out, grinding, crushing and sieving with a 120-mesh sieve to obtain the modified corundum.
The preparation method of the shaping sheet for dressing the chamfering grinding wheel of the semiconductor wafer comprises the following steps:
(1) Uniformly mixing a resin binder, a wetting agent, auxiliary materials, modified corundum and abrasive materials with graded particle sizes through a three-dimensional mixer to obtain a mixed material for standby;
(2) Putting the mixed material into a mould, pressing and forming the mixed material by a hot press, and curing the mixed material by an oven to obtain a wafer-shaped semi-finished product 1 with a round hole in the middle;
(3) Sticking films on two sides of the semi-finished product 1, and filling and fixing the middle round hole by resin/plastic to obtain a semi-finished product 2 for later use;
(4) And (3) carrying out vibration aging treatment on the semi-finished product 2 to obtain a finished product shaping sheet.
Preferably, the temperature of the hot press in the step (2) is 150-250 ℃, the pressure is 300KN-1500KN, the dwell time is 20-60 min, the curing temperature of the oven is 150-250 ℃, and the curing time is 10-30h.
Preferably, the semi-finished product 1 has three specifications of 290-310mm, 190-210mm and 140-160mm in outer diameter, 10-50mm in inner diameter and 0.9-1.4mm in thickness.
Preferably, in the step (3), the film on one side is a round film with the diameter of 250-300mm and the thickness of 0.04-0.1mm when the films are pasted on the two sides of the semi-finished product 1, the film on the other side is a round film or a regular polygon film with the diameter of 30-100mm and the thickness of 0.04-0.1mm when the films are round films, and the diagonal length of the regular polygon film is 30-100mm and the thickness of 0.04-0.1mm when the films are regular polygon films.
The invention provides a shaping sheet for dressing a semiconductor wafer chamfering grinding wheel and a preparation method thereof, and compared with the prior art, the shaping sheet has the advantages that:
According to the invention, the grinding material with the graded particle size and the modified corundum are compounded by the composite resin material, so that the grinding effect of the resin bond grinding wheel after the material processing is effectively ensured, the trimming piece prepared by the composite resin material on the basis of ensuring the effective grinding can be directly arranged on a production line, the edge of the trimming piece is processed by the chamfering coarse grinding wheel, the edge of the trimming piece has a shape complementary with the groove shape of the resin bond grinding wheel, and then the deformed resin bond grinding wheel is ground and trimmed, so that the resin bond grinding wheel can continuously carry out the chamfering fine processing of a semiconductor wafer, the service life of the resin bond grinding wheel is effectively prolonged, the chamfering processing stability of the semiconductor wafer is ensured, and the manpower and material resource loss caused by replacement is reduced.
Drawings
FIG. 1 is a schematic structural diagram of a shaping sheet according to an embodiment of the present invention;
in the figure, 1, a resin composite grinding material, 2, a film, and 3, a filling plastic.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described in the following in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Polyimide resins used in the following examples and comparative examples were purchased from the plastic allied technologies, inc. In hangzhou, phenolic resin was phenolic resin 2123 purchased from the chemical engineering, inc. In jinan da, and epoxy resin was high purity E44 epoxy resin purchased from the chemical engineering, inc. In jining.
Example 1:
preparation of a resin composite grinding material:
(1) Preparation of modified corundum:
S1, pickling mullite grains with the grain diameter of 10-30mm with 13% hydrofluoric acid for 10min, filtering, repeatedly flushing with clear water for 3 times, and drying to obtain pickled mullite grains for later use;
S2, adding corundum powder with the particle size of 1-3mm and acid-washed mullite particles into clear water according to the mass ratio of 1:1, carrying out ultrasonic homogenization for 15min at 400W, carrying out suction filtration, carrying out sintering treatment at 1300 ℃ for 30min, taking out, grinding, crushing and sieving with a 120-mesh sieve to obtain modified corundum;
(2) Setting composite resin, namely mixing polyimide resin, phenolic resin and epoxy resin according to the mass ratio of 3:4:1 to prepare the composite resin;
(3) Setting a graded particle size abrasive, namely mixing diamond, cubic boron nitride and silicon carbide according to the mass ratio of 7:3:2 to obtain the abrasive, and sieving the abrasive to obtain the particle size, wherein the particles with the particle size of 10-30 mu m account for 15-25% of the total amount, the particles with the particle size of 30-60 mu m account for 40-50% of the total amount, and the particle size of the rest particles is 60-150 mu m;
(4) The preparation method comprises the following steps of:
20 parts of composite resin, 0.5 part of sodium silicate, 4 parts of zinc sulfide, 6 parts of calcium fluoride, 2 parts of modified corundum and 30 parts of graded particle size abrasive;
(5) Uniformly mixing a resin binder, water glass, zinc sulfide, calcium fluoride, modified corundum and abrasive with graded grain size by a three-dimensional mixer to obtain a mixed material for standby;
(6) And (3) putting the mixed material into a die, adjusting the temperature to be 250 ℃ through a hot press, keeping the pressure to be 300KN, keeping the pressure for 60min, performing compression molding, setting the temperature to be 250 ℃ through an oven, and curing for 10h to obtain the resin composite grinding material with the round hole in the middle.
Example 2:
preparation of a resin composite grinding material:
(1) Preparation of modified corundum:
s1, pickling mullite grains with the grain diameter of 10-30mm with 13% hydrofluoric acid for 20min, filtering, repeatedly flushing with clear water for 2 times, and drying to obtain pickled mullite grains for later use;
S2, adding corundum powder with the particle size of 1-3mm and acid-washed mullite particles into clear water according to the mass ratio of 3:1, carrying out ultrasonic homogenization for 15min at 400W, carrying out suction filtration, carrying out sintering treatment at 1350 ℃ for 15min, taking out, grinding, crushing and sieving with a 120-mesh sieve to obtain modified corundum;
(2) Setting composite resin, namely mixing polyimide resin, phenolic resin and epoxy resin according to the mass ratio of 5:6:2 to prepare the composite resin;
(3) Setting a graded particle size abrasive, namely mixing black silicon carbide and green silicon carbide according to a mass ratio of 4:3 to obtain the abrasive, and sieving the abrasive to obtain particle sizes, wherein particles with the particle sizes of 10-30 mu m account for 25% of the total amount, particles with the particle sizes of 30-60 mu m account for 50% of the total amount, and the particle sizes of the rest particles are 60-150 mu m;
(4) The preparation method comprises the following steps of:
35 parts of composite resin, 3 parts of cresol, 16 parts of chromium oxide, 6 parts of modified corundum and 40 parts of graded particle size abrasive;
(5) Uniformly mixing a resin binder, a wetting agent, auxiliary materials, modified corundum and abrasive materials with graded particle sizes through a three-dimensional mixer to obtain a mixed material for standby;
(6) And (3) putting the mixed material into a die, adjusting the temperature to 150 ℃ through a hot press, keeping the pressure at 1500KN and the pressure maintaining time at 20minmin, performing compression molding, setting the temperature to 150 ℃ through an oven, and curing for 30 hours to obtain the resin composite grinding material with the round hole in the middle.
Comparative example 1:
preparation of a resin composite grinding material:
(1) Setting composite resin, namely mixing polyimide resin, phenolic resin and epoxy resin according to the mass ratio of 3:4:1 to prepare the composite resin;
(2) Setting a graded particle size abrasive, namely mixing diamond, cubic boron nitride and silicon carbide according to the mass ratio of 7:3:2 to obtain the abrasive, and sieving the abrasive to obtain the particle size, wherein the particles with the particle size of 10-30 mu m account for 15-25% of the total amount, the particles with the particle size of 30-60 mu m account for 40-50% of the total amount, and the particle size of the rest particles is 60-150 mu m;
(3) The preparation method comprises the following steps of:
20 parts of composite resin, 0.5 part of sodium silicate, 4 parts of zinc sulfide, 6 parts of calcium fluoride, 1 part of 120-mesh corundum powder, 1 part of 120-mesh mullite powder and 30 parts of abrasive with graded particle size;
(4) Uniformly mixing a resin binder, water glass, zinc sulfide, calcium fluoride, 120-mesh corundum powder, 120-mesh mullite powder and abrasive with graded grain size by a three-dimensional mixer to obtain a mixed material for standby;
(5) And (3) putting the mixed material into a die, adjusting the temperature to be 250 ℃ through a hot press, keeping the pressure to be 300KN, keeping the pressure for 60min, performing compression molding, setting the temperature to be 250 ℃ through an oven, and curing for 10h to obtain the resin composite grinding material with the round hole in the middle.
Comparative example 2:
preparation of a resin composite grinding material:
(1) Preparation of modified corundum:
S1, pickling mullite grains with the grain diameter of 10-30mm with 13% hydrofluoric acid for 10min, filtering, repeatedly flushing with clear water for 3 times, and drying to obtain pickled mullite grains for later use;
S2, adding corundum powder with the particle size of 1-3mm and acid-washed mullite particles into clear water according to the mass ratio of 1:1, carrying out ultrasonic homogenization for 15min at 400W, carrying out suction filtration, carrying out sintering treatment at 1300 ℃ for 30min, taking out, grinding, crushing and sieving with a 120-mesh sieve to obtain modified corundum;
(2) Setting composite resin, namely mixing polyimide resin, phenolic resin and epoxy resin according to the mass ratio of 3:4:1 to prepare the composite resin;
(3) Setting abrasive, namely mixing diamond, cubic boron nitride and silicon carbide according to the mass ratio of 7:3:2 to obtain the abrasive, sieving the abrasive, and controlling the particle size to be 10-30 mu m;
(4) The preparation method comprises the following steps of:
20 parts of composite resin, 0.5 part of sodium silicate, 4 parts of zinc sulfide, 6 parts of calcium fluoride, 2 parts of modified corundum and 30 parts of abrasive;
(5) Uniformly mixing a resin binder, water glass, zinc sulfide, calcium fluoride, modified corundum and abrasive materials through a three-dimensional mixer to obtain a mixed material for standby;
(6) And (3) putting the mixed material into a die, adjusting the temperature to be 250 ℃ through a hot press, keeping the pressure to be 300KN, keeping the pressure for 60min, performing compression molding, setting the temperature to be 250 ℃ through an oven, and curing for 10h to obtain the resin composite grinding material with the round hole in the middle.
Comparative example 3:
preparation of a resin composite grinding material:
(1) Preparation of modified corundum:
S1, pickling mullite grains with the grain diameter of 10-30mm with 13% hydrofluoric acid for 10min, filtering, repeatedly flushing with clear water for 3 times, and drying to obtain pickled mullite grains for later use;
S2, adding corundum powder with the particle size of 1-3mm and acid-washed mullite particles into clear water according to the mass ratio of 1:1, carrying out ultrasonic homogenization for 15min at 400W, carrying out suction filtration, carrying out sintering treatment at 1300 ℃ for 30min, taking out, grinding, crushing and sieving with a 120-mesh sieve to obtain modified corundum;
(2) Setting composite resin, namely mixing polyimide resin, phenolic resin and epoxy resin according to the mass ratio of 3:4:1 to prepare the composite resin;
(3) Setting abrasive, namely mixing diamond, cubic boron nitride and silicon carbide according to the mass ratio of 7:3:2 to obtain the abrasive, sieving the abrasive, and controlling the particle size to be 30-60 mu m;
(4) The preparation method comprises the following steps of:
20 parts of composite resin, 0.5 part of sodium silicate, 4 parts of zinc sulfide, 6 parts of calcium fluoride, 2 parts of modified corundum and 30 parts of graded particle size abrasive;
(5) Uniformly mixing a resin binder, water glass, zinc sulfide, calcium fluoride, modified corundum and abrasive materials through a three-dimensional mixer to obtain a mixed material for standby;
(6) And (3) putting the mixed material into a die, adjusting the temperature to be 250 ℃ through a hot press, keeping the pressure to be 300KN, keeping the pressure for 60min, performing compression molding, setting the temperature to be 250 ℃ through an oven, and curing for 10h to obtain the resin composite grinding material with the round hole in the middle.
Comparative example 4:
preparation of a resin composite grinding material:
(1) Preparation of modified corundum:
S1, pickling mullite grains with the grain diameter of 10-30mm with 13% hydrofluoric acid for 10min, filtering, repeatedly flushing with clear water for 3 times, and drying to obtain pickled mullite grains for later use;
S2, adding corundum powder with the particle size of 1-3mm and acid-washed mullite particles into clear water according to the mass ratio of 1:1, carrying out ultrasonic homogenization, carrying out suction filtration, then placing the mixture at 1300 ℃ for sintering treatment for 30min, taking out, grinding, crushing and sieving with a 120-mesh sieve to obtain modified corundum;
(2) Setting composite resin, namely mixing polyimide resin, phenolic resin and epoxy resin according to the mass ratio of 3:4:1 to prepare the composite resin;
(3) Setting abrasive, namely mixing diamond, cubic boron nitride and silicon carbide according to the mass ratio of 7:3:2 to obtain the abrasive, sieving the abrasive, and controlling the particle size to be 60-150 mu m;
(4) The preparation method comprises the following steps of:
20 parts of composite resin, 0.5 part of sodium silicate, 4 parts of zinc sulfide, 6 parts of calcium fluoride, 2 parts of modified corundum and 30 parts of graded particle size abrasive;
(5) Uniformly mixing a resin binder, water glass, zinc sulfide, calcium fluoride, modified corundum and abrasive materials through a three-dimensional mixer to obtain a mixed material for standby;
(6) And (3) putting the mixed material into a die, adjusting the temperature to be 250 ℃ through a hot press, keeping the pressure to be 300KN, keeping the pressure for 60min, performing compression molding, setting the temperature to be 250 ℃ through an oven, and curing for 10h to obtain the resin composite grinding material with the round hole in the middle.
And (3) detection:
Resin composite abrasive materials were prepared according to the methods of examples 1-2 and comparative examples 1-4 described above, and the prepared resin composite abrasive materials were controlled to have a specification of 304mm in outside diameter, 20mm in inside diameter, and 1.2mm in thickness;
The resin composite grinding materials 1 are subjected to two-sided film pasting treatment (facilitating subsequent installation and fixation), the film pasting 2 on one side is a round film, the diameter is 250mm, the thickness is 0.05mm, the film pasting 2 on the other side is also a round film, the diameter is 50mm, the thickness is 0.05mm, the center of the resin composite grinding material 1 is filled with filling plastic 3 so as to facilitate subsequent installation on a motor, and vibration aging treatment is performed for 3 hours after the film pasting and plastic filling, so that a shaping sheet (shown in figure 1) is obtained.
1. Mounting a shaping sheet on a production line for chamfering a wafer, firstly adopting a chamfering rough grinding wheel to process the edge of the shaping sheet, enabling the edge of the shaping sheet to have a shape complementary with the groove shape of a resin bond grinding wheel, then correcting the resin bond grinding wheel used for continuous processing by adopting the processed shaping sheet, continuously polishing the wafer chamfer (the rotating speed of the resin bond grinding wheel in the chamfering polishing process is 3000r/min, the feeding amount is 50um/r, and the used resin bond grinding wheel is TABERCS-10 grinding wheels), wherein the angle of the bevel edge of the chamfer surface of the brand-new resin bond grinding wheel is 11+/-0.5 DEG when the front 10 semiconductor wafers are chamfered, adopting the shaping sheets prepared by the groups to trim the used resin bond grinding wheel, recording the numerical values of chamfering processing of 10 semiconductor wafers after trimming, and the specific results are shown in the following table 1:
TABLE 1
From the above table, the resin bond grinding wheel after trimming the plastic sheet prepared in the experimental group 1 and the experimental group 2 has better stability in chamfering the semiconductor wafer, and the processing effect is basically consistent with that of a new grinding wheel.
2. The abrasion condition of each group of shaping sheets relative to the resin bond grinding wheel is detected, the resin bond grinding wheel is adopted to carry out counter grinding with each group of shaping sheets, the thickness consumed by the shaping sheets when the abrasion of the resin bond grinding wheel is removed by 0.5mm is detected (the experiment is repeated for 5 times for each group of shaping sheets), and the specific results are shown in the following table 2:
TABLE 2
From the above table, the shaping sheets prepared from the materials of example 1 and example 2 have smaller abrasion loss relative to the resin bond grinding wheel, and have better abrasion stability, so that the subsequent multiple shaping use can be realized.
Based on the experiment, according to the specifications of the actual resin bond grinding wheel, the outer diameter of the shaping sheet can be correspondingly adjusted to be 290-310mm, 190-210mm and 140-160mm, the inner diameter is 10-50mm, and the thickness is 0.9-1.4mm.
The foregoing embodiments are merely for illustrating the technical solution of the present invention, but not for limiting the same, and although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those skilled in the art that modifications may be made to the technical solution described in the foregoing embodiments or equivalents may be substituted for parts of the technical features thereof, and that such modifications or substitutions do not depart from the spirit and scope of the technical solution of the embodiments of the present invention in essence.
Claims (10)
1. The shaping sheet for dressing the semiconductor wafer chamfering grinding wheel is characterized by being made of a resin composite grinding material, wherein the resin composite grinding material comprises, by weight, 20-35 parts of composite resin, 0.5-3 parts of wetting agent, 10-16 parts of auxiliary materials, 2-6 parts of modified corundum and 30-40 parts of graded particle size abrasive materials;
the modified corundum is prepared by calcining and crushing mullite particles with the particle size of 1-3mm after mixed acid washing;
The abrasive with the graded grain diameter comprises 15-25% of grains with the grain diameter of 10-30 mu m, 40-50% of grains with the grain diameter of 30-60 mu m and 60-150 mu m.
2. The shaping sheet for dressing a semiconductor wafer chamfering grinding wheel according to claim 1, wherein the composite resin is polyimide resin, phenolic resin and epoxy resin in a mass ratio of 3-5:4-6:1-2.
3. The truing sheet for dressing a semiconductor wafer chamfering grinding wheel as claimed in claim 1, wherein the wetting agent is any one or more of water glass, liquid phenolic resin, cresol and paste liquid.
4. The shaping sheet for dressing a semiconductor wafer chamfering grinding wheel as claimed in claim 1, wherein the auxiliary material is any one or more of chromium oxide, zinc sulfide, iron oxide and calcium fluoride.
5. The shaping sheet for dressing a semiconductor wafer chamfering grinding wheel according to claim 1, wherein the abrasive with graded grain size is obtained by mixing diamond, cubic boron nitride and silicon carbide according to a mass ratio of 6-8:2-4:1-3.
6. The truing sheet for dressing a semiconductor wafer chamfering grinding wheel according to claim 1, wherein the preparation method of the modified corundum comprises the following steps:
S1, pickling mullite grains with the grain diameter of 10-30mm with 13% hydrofluoric acid for 10-20min, filtering, repeatedly flushing with clear water for 2-3 times, and drying to obtain pickled mullite grains for later use;
S2, adding corundum powder with the particle size of 1-3mm and the pickled mullite particles into clear water according to the mass ratio of 1-3:1, carrying out ultrasonic homogenization, carrying out suction filtration, then placing the mixture at 1300-1350 ℃ for sintering treatment for 15-30min, taking out, grinding, crushing and sieving with a 120-mesh sieve to obtain the modified corundum.
7. A method of producing the shaping sheet according to any of claims 1 to 6, comprising the steps of:
(1) Uniformly mixing a resin binder, a wetting agent, auxiliary materials, modified corundum and abrasive materials with graded particle sizes through a three-dimensional mixer to obtain a mixed material for standby;
(2) Putting the mixed material into a mould, pressing and forming the mixed material by a hot press, and curing the mixed material by an oven to obtain a wafer-shaped semi-finished product 1 with a round hole in the middle;
(3) Sticking films on two sides of the semi-finished product 1, and filling and fixing the middle round hole by resin/plastic to obtain a semi-finished product 2 for later use;
(4) And (3) carrying out vibration aging treatment on the semi-finished product 2 to obtain a finished product shaping sheet.
8. The method of claim 7, wherein the hot press molding temperature in the step (2) is 150-250 ℃, the pressure is 300KN-1500KN, the dwell time is 20-60 min, the oven curing temperature is 150-250 ℃, and the curing time is 10-30h.
9. The method of claim 7, wherein the semi-finished product 1 has three dimensions of 290-310mm, 190-210mm and 140-160mm, 10-50mm in inner diameter and 0.9-1.4mm in thickness.
10. The method of claim 7, wherein the semi-finished product 1 is a round film with a diameter of 250-300mm and a thickness of 0.04-0.1mm, and the other film is a round film or a regular polygon film with a diameter of 30-100mm, a thickness of 0.04-0.1mm, and a diagonal length of 30-100mm and a thickness of 0.04-0.1mm.
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