CN119035872A - Silver-based high-temperature high-thermal-conductivity packaging material with double-network structure, and preparation method and application thereof - Google Patents
Silver-based high-temperature high-thermal-conductivity packaging material with double-network structure, and preparation method and application thereof Download PDFInfo
- Publication number
- CN119035872A CN119035872A CN202411539619.XA CN202411539619A CN119035872A CN 119035872 A CN119035872 A CN 119035872A CN 202411539619 A CN202411539619 A CN 202411539619A CN 119035872 A CN119035872 A CN 119035872A
- Authority
- CN
- China
- Prior art keywords
- silver
- network structure
- temperature
- packaging material
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3006—Ag as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0255—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/40—Making wire or rods for soldering or welding
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Powder Metallurgy (AREA)
Abstract
本发明公开了一种双网络结构银基低温高热导封装材料及其制备方法和应用，该银基低温高热导封装材料的制备方法包括：提供具有多孔网络结构的银质材料，银质材料中的孔为定向或非定向的、且孔径为微纳米级的通孔，银质材料的孔隙率为25%～95%；将呈熔融态的低熔点焊料均匀涂布于银质材料上，并经辊压后得到具有双网络结构的银基低温高热导封装材料。该制备方法简单、合理、操作灵活，所得银基低温高热导封装材料的结构致密、并具有优异的高热导率、低熔点、无污染等特性，很好的满足了半导体低温封装需求。
The present invention discloses a silver-based low-temperature high-thermal conductivity packaging material with a double network structure, and a preparation method and application thereof. The preparation method of the silver-based low-temperature high-thermal conductivity packaging material comprises: providing a silver material with a porous network structure, wherein the pores in the silver material are directional or non-directional through holes with a micro-nano pore size, and the porosity of the silver material is 25% to 95%; evenly coating a molten low-melting point solder on the silver material, and rolling to obtain a silver-based low-temperature high-thermal conductivity packaging material with a double network structure. The preparation method is simple, reasonable, and flexible in operation. The obtained silver-based low-temperature high-thermal conductivity packaging material has a dense structure, excellent high thermal conductivity, low melting point, no pollution, and other characteristics, which well meets the semiconductor low-temperature packaging needs.
Description
Technical Field
The invention relates to the technical field of semiconductor packaging materials, in particular to a silver-based low-temperature high-thermal-conductivity packaging material with a double-network structure, and a preparation method and application thereof.
Background
To meet the high thermal conductivity and temperature requirements of semiconductor low temperature packages, low temperature interface materials with high thermal conductivity are a highly desirable solder in semiconductor packaging processes. At present, the field of semiconductor packaging generally uses soldering tin alloy (tin and tin-based alloy) or silver-based alloy added with silver as solder to improve high-temperature welding strength and even heat conductivity, but the alloy material, particularly the alloy material with silver content more than 10%, has the defects that ① welding temperature is high and greatly exceeds the temperature range required by the conventional chip packaging process, ② heat conductivity is reduced along with alloying, the high heat conductivity requirement required by the chip packaging process is difficult to meet, and the like, so that the reliability during welding is difficult to ensure, and the processing requirement of semiconductor packaging cannot be well met.
In view of this, the present invention has been made.
Disclosure of Invention
In order to overcome the defects, the invention provides the silver-based low-temperature high-thermal-conductivity packaging material with the double-network structure, and the preparation method and application thereof.
The technical scheme adopted for solving the technical problems is that the preparation method of the silver-based high-temperature high-thermal-conductivity packaging material with the double-network structure comprises the following steps:
Providing a silver material with a porous network structure, wherein the pores in the silver material are directional or non-directional through holes with the pore diameter of micro-nano level, and the porosity of the silver material is 25% -95%;
And uniformly coating the molten low-melting-point solder on the silver material, and rolling to obtain the silver-based low-temperature high-thermal-conductivity packaging material with the double-network structure.
As a further improvement of the invention, the porosity of the silver material is preferably 50% -90%.
As a further improvement of the invention, in the silver material, the through holes are two-dimensional or three-dimensional through holes with the average pore diameter of 2-200 mu m.
As a further improvement of the invention, silver powder, a binder, an organic solvent and a pore-forming agent are compounded and mixed, and then film making and high-temperature treatment are carried out, so that the silver material is prepared.
As a further improvement of the present invention, the low melting point solder employs any one of pure tin, sn-Bi alloy, sn-In alloy, and Sn-Bi-In alloy.
As a further improvement of the invention, the coating process condition of uniformly coating the molten low-melting-point solder on the silver material is that the coating conveying speed is 0.3-1 m/min, the width of a roller of a coater is 200-600 mm;
In addition, the rolling processing conditions are that the rolling rollers are made of polytetrafluoroethylene materials, and the gap between the rolling rollers is 0.01-2 mm.
As a further improvement of the present invention, the low-melting-point solder in a molten state fills all the through holes on the silver material, and at the same time, the low-melting-point solder in a molten state is uniformly coated on the surface of the silver material.
As a further improvement of the present invention, the silver-based low-temperature high-thermal-conductivity packaging material is of a sheet structure as a whole, and the thickness is 0.01-2 mm.
The invention also provides a silver-based low-temperature high-thermal-conductivity packaging material with a double-network structure, which is manufactured by adopting the preparation method of the silver-based low-temperature high-thermal-conductivity packaging material with the double-network structure.
The invention also provides an application of the silver-based low-temperature high-thermal-conductivity packaging material with the double-network structure as a solder for semiconductor packaging.
Compared with the prior art, 1) the silver material with the micro-nano through hole network structure and high heat conductivity and the low-melting-point solder with high-efficiency low-temperature fusion weldability are compounded through technical innovation, so that the silver-based low-temperature high-heat-conductivity packaging material with compact structure and excellent high heat conductivity, low-melting-point and other characteristics is prepared, packaging requirements of high-heat-conductivity interface heat conduction packaging, low-temperature high-efficiency short-time packaging and the like required by semiconductor packaging can be well met, and the welding effect is effectively improved. In addition, when the silver-based low-temperature high-thermal-conductivity packaging material is used for welding, the welding stress can be effectively reduced, and therefore the welding effect can be further improved. 2) The silver-based low-temperature high-thermal-conductivity packaging material does not contain soldering flux, so that the limitation of application fields caused by the use of the soldering flux is avoided, the applicability and the universality of the silver-based low-temperature high-thermal-conductivity packaging material are greatly expanded, the high molecular pollution and residues caused by the use of the soldering flux are avoided, the cleanliness, the safety and the welding effect of the silver-based low-temperature high-thermal-conductivity packaging material are greatly improved, and the cleaning cost after welding is saved.
Drawings
FIG. 1 is a flow chart of a preparation method of a silver-based high-temperature high-thermal-conductivity packaging material with a double-network structure;
Fig. 2 is a three-dimensional simulation structure diagram of the silver-based high-temperature high-thermal-conductivity packaging material with the double-network structure.
The following description is made with reference to the accompanying drawings:
1. Low-melting point solder network structure and 2, silver network structure.
Detailed Description
The present application will be described in further detail with reference to the following specific examples, but the present application is not limited to the following examples.
The application provides a silver-based low-temperature high-thermal-conductivity packaging material with a double-network structure, a preparation method and application thereof, the preparation method is simple, reasonable and flexible in operation, the silver-based low-temperature high-thermal-conductivity packaging material has compact structure, excellent high thermal conductivity, low melting point, no pollution and the like, and well meets the low-temperature packaging requirement of semiconductors. The implementation reason is mainly that the application optimizes and innovates the selection materials, the preparation method and the like of the silver-based low-temperature high-thermal-conductivity packaging material, and the specific description is as follows:
1. The silver-based low-temperature high-thermal-conductivity packaging material with the double-network structure is prepared, wherein examples 1-3 respectively show the situation that the silver materials are the same but the low-melting-point solders are different, and examples 4-7 respectively show the situation that the low-melting-point solders are the same but the silver materials are different (mainly the porosities of the silver materials are different).
Example 1
Referring to fig. 1, embodiment 1 provides a method for preparing a silver-based high-temperature high-thermal-conductivity packaging material with a dual-network structure, which comprises the following steps:
S1, providing a silver material with a porous network structure, wherein the pores in the silver material are directional or non-directional through holes with the pore diameter of micro-nano scale, and the porosity of the silver material is 25% -95%.
Specifically, the method for manufacturing the silver material with the porous network structure in embodiment 1 includes:
S11, preparing silver powder by utilizing an atomization pulverizing process, wherein the particle size of the silver powder is 300-400 meshes (37-48 mu m), and the purity of the silver powder is more than 99.9%. It can be appreciated that the silver powder obtained belongs to the fine silver powder.
The atomization pulverizing process is a powder preparation method which is realized by using a fast-spraying molten fluid (metal or alloy liquid), namely, the metal or alloy liquid forms fine liquid drops, and then the fine liquid drops are fast condensed into solid spherical powder. This is a conventional technical means in the field of metal pulverizing, and will not be described in detail here.
The supplement shows that according to the design requirement of the product, the superfine silver powder with the particle diameter of 0.05-5 mu m can be prepared by a chemical or electrochemical method when the silver powder is prepared.
And S12, compounding and mixing the silver powder with a binder and the like to obtain the slurry.
Specifically, according to product design requirements, the slurry for manufacturing the silver material in the embodiment 1 can preferably adopt a raw material formula comprising, by weight, 40% -80% of silver powder, 5% -20% of a binder, 5% -20% of an organic solvent and 10% -20% of a pore-forming agent, wherein the binder preferably adopts at least one of epoxy resin, acrylic resin, phenolic resin, ethylcellulose, polyethylene glycol and polyvinyl alcohol, the organic solvent preferably adopts at least one of ethanol, propanol, isopropanol, acetone, toluene, xylene, terpineol, triethanolamine, isophorone and dibasic ester, and the pore-forming agent preferably adopts at least one of polyethylene and polypropylene.
Specifically, the paste is prepared by compounding 70% of silver powder, 8% of binder (epoxy resin), 12% of organic solvent (toluene) and 10% of pore-forming agent (polyethylene) according to weight percentage.
It can be appreciated that ① in the raw material formulation of the above paste, the organic solvent is used to dissolve the binder and disperse the silver powder and the pore-forming agent, the binder is used to bond the silver powder and the pore-forming agent, and the pore-forming agent is used to create the through-holes in the silver material structure. ② The raw material formulation of the above slurry is only a preferred embodiment, and the slurry used for producing the silver material is not limited to the above raw material formulation in practical use of the present application.
And S13, coating or rolling the slurry to prepare a film blank, and sequentially drying and treating the film blank at high temperature to obtain the silver material with the porous network structure.
Specifically, the above-described drying treatment may be performed in a vacuum oven.
The high-temperature treatment mode can preferably adopt a high-temperature sintering process, and the specific processing conditions of the high-temperature sintering process can be preferably controlled to select nitrogen as a protective gas and hydrogen as a reducing gas, and sintering is carried out for 30-120 min at 750-900 ℃. It is further noted that the sintering time is determined by the thickness of the resulting silver material and the specific application, and generally, a thin silver material may be selected for a relatively short sintering time and a thick silver material may be selected for a relatively long sintering time.
Based on the above-mentioned preferred method for manufacturing the silver material, ① the present application adopts the manufacturing method that combines the working procedures of "manufacturing fine silver powder", "preparing slurry", "manufacturing membrane blank", "high temperature treatment (high temperature sintering)" and the like to manufacture the silver material, so that the silver material has the characteristics of controllable overall thickness, controllable size, controllable hole pattern, aperture and layout of the through holes, and the like, thereby realizing the characteristics of excellent micro-nano porous network structure characteristics, ultra-thinning, miniaturization, and the like. ② The preparation method of the silver material is simple, reasonable and novel, is convenient to process, has low processing cost, and can realize continuous and large-scale production.
In addition, based on the above-mentioned preferred method for producing a silver material, in the silver material structure produced in this example 1, the porosity is 50% ± 2%, and the through holes are three-dimensional through holes having a spherical pore shape and an average pore diameter of 30 to 40 μm. It can be understood that, in the silver material structure manufactured in this embodiment 1, the plurality of three-dimensional through holes together form an array porous network structure, and by using the array porous network structure and based on the good interfacial wettability between the silver material and the low-melting-point solder, the molten material of the low-melting-point solder can be quickly immersed into the array porous network structure with a controllable filling amount, and form a compact dual-network interaction structure in combination with the molten material of the low-melting-point solder.
In addition, in order to facilitate the coating and rolling operations described below, the silver material prepared in this embodiment 1 has a sheet structure, and the thickness can be preferably controlled to be 0.05-1 mm. However, it is understood that the silver material is not limited to a sheet structure in the actual production process, and may be a wire structure or the like.
And S2, uniformly coating the low-melting-point solder in a molten state on the silver material, and rolling to obtain the silver-based low-temperature high-thermal-conductivity packaging material with the double-network structure.
Specifically, the preferred processing method for realizing the low-melting solder coating on the silver material and rolling processing in the embodiment 1 is as follows:
and S21, placing the silver material provided in the step S1 on a working pad.
The working pad is made of Teflon material, the silver material is preheated to the same temperature as the melting material of the low-melting-point solder before or after being placed on the working pad (in the embodiment 1, the silver material is preheated to 242-252 ℃) so as to ensure that the interface reactivity between the melting material of the low-melting-point solder and the silver material reaches the optimal state, namely, the silver material has good interface reactivity to realize the infiltration compounding effect, and the framework of the silver material is not melted in the short-time coating compounding operation process.
And S22, adopting analytically pure tin (hereinafter simply referred to as pure tin) with the melting point of 232 ℃ as the low-melting-point solder, and heating the pure tin to melt to obtain a molten material of the pure tin.
In this embodiment 1, the temperature of the molten material of pure tin is also preferably controlled so as to be higher than the melting point of the pure tin, specifically, the temperature of the molten material of pure tin is controlled to be 242-252 ℃ (i.e. 10-20 ℃ is properly overheated), so that on one hand, the uniformity of coating the molten material of pure tin on the preheated silver material can be effectively improved when the coating operation is performed in the later process, and on the other hand, the interfacial reactivity between the molten material of pure tin and the preheated silver material can be improved, thereby ensuring good interfacial wettability between the two materials.
And S23, uniformly coating the molten material of the pure tin on the preheated silver material by using a coater (preferably a single-sided continuous roll coater), wherein the coating process condition of the coater is preferably that the coating conveying speed is 0.3-1 m/min and the width of a roll of the coater is 200-600 mm.
It can be understood that, on the one hand, the molten material of the pure tin and the preheated silver material have good interface wettability, so that the molten material of the pure tin can be easily (rapidly) and uniformly coated on the surface of the silver material, and on the other hand, the silver material is formed with an array porous network structure, so that the molten material of the pure tin can be coated on the silver material in a set and large coating amount, and the combination of the pure tin and the silver material can well meet the requirements of high heat conductivity and low melting point of the solder for semiconductor low-temperature packaging.
In addition, according to the design requirement of the product, through the interfacial infiltration characteristic between the molten material of the pure tin and the preheated silver material and the coating process, the molten low-melting-point solder can be filled in all the through holes on the silver material, and simultaneously, the molten low-melting-point solder can be uniformly coated on the surface (such as the peripheral surface) of the silver material.
And S24, rolling the silver material coated with the pure tin by using a roll squeezer, wherein the rolling process conditions are that the rolling rollers are made of polytetrafluoroethylene materials, the gap between the rolling rollers is 0.01-2 mm (the gap between the rolling rollers can be further controlled to be 0.18-0.5 mm), and the silver-based low-temperature high-thermal-conductivity packaging material which is of a sheet-shaped structure and has a double-network structure is obtained. It can be understood that ① "double network structure" refers to a silver network structure and a pure tin network structure which are combined together in an interactive way, and referring to the three-dimensional simulation structure diagram shown in fig. 2, a mark 1 is indicated as a "low-melting-point solder network structure", and a mark 2 is indicated as a "silver network structure". ② The shape of the silver-based low-temperature high-thermal-conductivity packaging material is not limited to the sheet shape, and can be specifically determined according to the design requirements of the product.
Further, based on the above rolling process, the thickness of the silver-based low-temperature high-thermal-conductivity packaging material prepared in embodiment 1 may be preferably controlled to be 0.01-2 mm. And further, in embodiment 1, the thickness of the silver-based low-temperature high-thermal-conductivity encapsulation material is preferably 0.2 mm.
In addition, according to the product design requirement, the silver-based low-temperature high-thermal-conductivity packaging material in embodiment 1 may be rolled or rolled to further obtain the ultra-thin silver-based low-temperature high-thermal-conductivity packaging material.
And S3, carrying out conventional quality detection and analysis, die cutting and other processing operations on the silver-based low-temperature high-thermal-conductivity packaging material (or the ultrathin silver-based low-temperature high-thermal-conductivity packaging material) in sequence, and completing the manufacturing of a silver-based low-temperature high-thermal-conductivity packaging material finished product required by the post-processing.
Example 2
The embodiment 2 also provides a preparation method of the silver-based low-temperature high-thermal-conductivity packaging material with a dual-network structure, and compared with the embodiment 1, the difference of the embodiment 2 is mainly that the low-melting-point solder adopted in the embodiment 2 is different from the embodiment 1.
Specifically, this example 2 uses a 42Sn-58Bi alloy having a melting point of 139 ℃ as the low melting point solder, and the 42Sn-58Bi alloy refers to a Sn-Bi alloy composed of 42% by weight of Sn and 58% by weight of Bi. It is understood that the 42Sn-58Bi alloy also has good interfacial wettability with the silver material.
Accordingly, in this example 2, before the 42Sn-58Bi alloy is used for coating, the 42Sn-58Bi alloy is heated and melted to obtain the molten 42Sn-58Bi alloy, the temperature of the molten 42Sn-58Bi alloy is preferably controlled to be 149 ℃ to 159 ℃ (i.e. properly overheated to 10 ℃ to 20 ℃), and the silver material (the same as the silver material obtained in example 1) is preheated to 149 ℃ to 159 ℃, so as to improve the uniformity of coating the molten 42Sn-58Bi alloy on the silver material and the interfacial reactivity/interfacial wettability between the molten 42Sn-58Bi alloy and the silver material.
Based on the above-mentioned difference, and in the case that the silver material and the same coating and rolling process as those of example 1 are adopted in this example 2, this example 2 also produced a silver-based low-temperature high-thermal-conductivity package material having a sheet-like structure as a whole and a double-network structure. And further, the thickness of the silver-based low-temperature high-thermal-conductivity encapsulation material in this embodiment 2 is preferably 0.15 mm.
In addition, after the silver-based low-temperature high-thermal-conductivity packaging material is prepared in this embodiment 2, the silver-based low-temperature high-thermal-conductivity packaging material may be rolled or rolled selectively according to the design requirement of the product, and then conventional quality detection, analysis, die cutting and other processing operations are performed to complete the preparation of the silver-based low-temperature high-thermal-conductivity packaging material product required by the subsequent process.
Example 3
The embodiment 3 also provides a preparation method of the silver-based low-temperature high-thermal-conductivity packaging material with a dual-network structure, and compared with the embodiment 1, the difference of the embodiment 3 is mainly that the low-melting-point solder adopted in the embodiment 3 is different from the embodiment 1.
Specifically, in this example 3, a 59Sn-41In alloy having a melting point of 119 ℃ was used as the low melting point solder, and the 59Sn-41In alloy refers to a Sn-In alloy composed of 59% by weight of Sn and 41% by weight of In. It is understood that the 59Sn-41In alloy also has good interface wettability with the silver material.
Correspondingly, before the 59Sn-41In alloy is used for coating, the 59Sn-41In alloy is heated and melted to obtain the molten material of the 59Sn-41In alloy, the temperature of the molten material of the 59Sn-41In alloy is preferably controlled to be 129-139 ℃ (namely, the molten material is properly overheated to 10-20 ℃), and the silver material (the same as the silver material obtained In the embodiment 1) is preheated to 129-139 ℃, so that the uniformity of coating the molten material of the 59Sn-41In alloy on the silver material and the interface reactivity/interface wettability between the molten material of the 59Sn-41In alloy and the silver material are improved.
Based on the above-mentioned difference, and in the case that the silver material and the same coating and rolling process as those of example 1 were adopted in this example 3, this example 3 also produced a silver-based low-temperature high-thermal-conductivity package material having a sheet-like structure as a whole and a double-network structure. And further, in embodiment 3, the thickness of the silver-based low-temperature high-thermal-conductivity encapsulation material is preferably 0.1 mm.
In addition, after the silver-based low-temperature high-thermal-conductivity packaging material is prepared in this embodiment 3, the silver-based low-temperature high-thermal-conductivity packaging material may be rolled or rolled selectively according to the design requirement of the product, and then conventional quality detection, analysis, die cutting and other processing operations are performed to complete the preparation of the silver-based low-temperature high-thermal-conductivity packaging material product required by the subsequent process.
Example 4
The embodiment 4 also provides a method for preparing the silver-based low-temperature high-thermal-conductivity packaging material with a dual network structure, and compared with the embodiment 1, the difference of the embodiment 4 is that the silver material prepared in the embodiment 4 is different from the embodiment 1.
Specifically, in the preparation of the silver material in the embodiment 4, the slurry formula is that the slurry is prepared by compounding, by weight, 60% of silver powder, 15% of binder (ethyl cellulose), 12% of organic solvent (toluene) and 13% of pore-forming agent (polypropylene), wherein the particle size of the silver powder is 300-400 meshes, and the purity of the silver powder is more than 99.9%. And (3) after the obtained slurry is prepared into a film blank through a coating or rolling process, sequentially carrying out vacuum drying and high-temperature sintering treatment to obtain the silver material with the porous network structure.
In the silver material structure prepared in this embodiment 4, the porosity reaches 60% ± 2%, the through holes are three-dimensional through holes which are oriented, spherical in hole type and 30-40 μm in average pore diameter, that is, a plurality of three-dimensional through holes together form an array porous network structure. In addition, the silver material is also integrally formed into a sheet-like structure having a thickness of 0.05 to 1 mm.
Based on the above-mentioned difference, and in the case where the low melting point solder and the same coating and rolling process as in example 1 were adopted in this example 4, this example 4 also produced a silver-based low temperature high thermal conductive encapsulating material having a sheet-like structure as a whole and a double network structure. And further, the thickness of the silver-based low temperature high thermal conductive sealing material in this embodiment 4 is preferably 0.2 mm.
In addition, after the silver-based low-temperature high-thermal-conductivity packaging material is prepared in this embodiment 4, the silver-based low-temperature high-thermal-conductivity packaging material may be rolled or rolled selectively according to the design requirement of the product, and then conventional quality detection, analysis, die cutting and other processing operations are performed to complete the preparation of the silver-based low-temperature high-thermal-conductivity packaging material product required by the subsequent process.
Example 5
The embodiment 5 also provides a method for preparing the silver-based low-temperature high-thermal-conductivity packaging material with a dual network structure, and compared with the embodiment 1, the difference of the embodiment 5 is that the silver material adopted in the embodiment 5 is different from the embodiment 1.
Specifically, in the preparation of the silver material in the embodiment 5, the slurry formula is that the slurry is prepared by compounding 65% of silver powder, 10% of binder (epoxy resin), 10% of organic solvent (toluene) and 15% of pore-forming agent (polypropylene) according to weight percentage, wherein the particle size of the silver powder is 300-400 meshes, and the purity of the silver powder is more than 99.9%. And (3) after the obtained slurry is prepared into a film blank through a coating or rolling process, sequentially carrying out vacuum drying and high-temperature sintering treatment to obtain the silver material with the porous network structure.
In the silver material structure prepared in this embodiment 5, the porosity reaches 70% ± 2%, the through holes are three-dimensional through holes which are oriented, spherical in hole type and 30-40 μm in average pore diameter, that is, a plurality of three-dimensional through holes together form an array porous network structure. In addition, the silver material is also integrally formed into a sheet-like structure having a thickness of 0.05 to 1 mm.
Based on the above-described difference, and in the case where the low melting point solder and the same coating and rolling process as in example 1 were employed in this example 5, this example 5 also produced a silver-based low temperature high thermal conductive encapsulating material having a sheet-like structure as a whole and a double network structure. And further, the thickness of the silver-based low temperature high thermal conductive sealing material in this embodiment 5 is preferably 0.3 mm.
In addition, after the silver-based low-temperature high-thermal-conductivity packaging material is prepared in this embodiment 5, the silver-based low-temperature high-thermal-conductivity packaging material may be rolled or rolled selectively according to the design requirement of the product, and then conventional quality detection, analysis, die cutting and other processing operations are performed to complete the preparation of the silver-based low-temperature high-thermal-conductivity packaging material product required by the subsequent process.
Example 6
The embodiment 6 also provides a method for preparing the silver-based low-temperature high-thermal-conductivity packaging material with a dual network structure, and compared with the embodiment 1, the difference of the embodiment 6 is that the silver material adopted in the embodiment 6 is different from the embodiment 1.
Specifically, in the preparation of the silver material in the embodiment 6, the slurry formula is that the slurry is prepared by compounding 58% of silver powder, 12% of binder (epoxy resin), 13% of organic solvent (toluene) and 17% of pore-forming agent (polyethylene) according to weight percentage, wherein the particle size of the silver powder is 300-400 meshes, and the purity of the silver powder is more than 99.9%. And (3) after the obtained slurry is prepared into a film blank through a coating or rolling process, sequentially carrying out vacuum drying and high-temperature sintering treatment to obtain the silver material with the porous network structure.
In the silver material structure prepared in this example 6, the porosity reaches 80% ± 2%, the through holes are three-dimensional through holes which are oriented, spherical in hole type and 30-40 μm in average pore diameter, that is, a plurality of three-dimensional through holes together form an array porous network structure. In addition, the silver material is also integrally formed into a sheet-like structure having a thickness of 0.05 to 1 mm.
Based on the above-mentioned difference, and in the case where the low melting point solder and the same coating and rolling process as in example 1 were adopted in this example 6, this example 6 also produced a silver-based low temperature high thermal conductive encapsulating material having a sheet-like structure as a whole and a double network structure. And further, the thickness of the silver-based low temperature high thermal conductive sealing material in this embodiment 6 is preferably 0.2 mm.
In addition, after the silver-based low-temperature high-thermal-conductivity packaging material is prepared in this embodiment 6, the silver-based low-temperature high-thermal-conductivity packaging material may be rolled or rolled selectively according to the design requirement of the product, and then conventional quality detection, analysis, die cutting and other processing operations are performed to complete the preparation of the silver-based low-temperature high-thermal-conductivity packaging material product required by the subsequent process.
Example 7
The embodiment 7 also provides a method for preparing the silver-based low-temperature high-thermal-conductivity packaging material with a dual-network structure, and compared with the embodiment 1, the difference of the embodiment 7 is that the silver material adopted in the embodiment 7 is different from the embodiment 1.
Specifically, in the preparation of the silver material in the embodiment 7, the slurry formula is that the slurry is prepared by compounding 50% of silver powder, 14% of binder (ethyl cellulose), 16% of organic solvent (toluene) and 20% of pore-forming agent (polyethylene) according to weight percentage, wherein the particle size of the silver powder is 300-400 meshes, and the purity of the silver powder is more than 99.9%. And (3) after the obtained slurry is prepared into a film blank through a coating or rolling process, sequentially carrying out vacuum drying and high-temperature sintering treatment to obtain the silver material with the porous network structure.
In the silver material structure prepared in this example 7, the porosity reaches 90% ± 2%, the through holes are two-dimensional through holes which are oriented, have cylindrical holes and have an average pore diameter of 30-40 μm, that is, a plurality of the two-dimensional through holes together form an array porous network structure. In addition, the silver material is also integrally formed into a sheet-like structure having a thickness of 0.05 to 1 mm.
Based on the above-mentioned difference, and in the case where the low melting point solder and the same coating and rolling process as in example 1 were adopted in this example 7, this example 7 also produced a silver-based low temperature high thermal conductive sealing material having a sheet-like structure as a whole and a double network structure. And further, in embodiment 7, the thickness of the silver-based low-temperature high-thermal-conductivity encapsulation material is preferably 0.2 mm.
In addition, after the silver-based low-temperature high-thermal-conductivity packaging material is prepared in this embodiment 7, the silver-based low-temperature high-thermal-conductivity packaging material may be rolled or rolled selectively according to the design requirement of the product, and then conventional quality detection, analysis, die cutting and other processing operations are performed to complete the preparation of the silver-based low-temperature high-thermal-conductivity packaging material product required by the subsequent process.
2. Comparative examples are provided;
As a comparative sample, a Sn-Bi-based binary alloy, which is widely used in the market at present, having a melting point of 139 ℃ and capable of being welded at 185 ℃ or lower, was used.
3. The performance test of the silver-based low-temperature high-thermal-conductivity packaging material with the double-network structure is carried out;
3.1 The physicochemical test results of the silver-based high-temperature high-thermal-conductivity packaging material and the comparative sample obtained in examples 1 to 7 of the present application:
Physicochemical tests are respectively carried out on the silver-based high-temperature high-thermal-conductivity packaging materials and the comparison samples obtained in the embodiments 1-7, wherein the test contents comprise a thermal conductivity test, a melting point test and the like, and the test results are shown in the following table 1.
TABLE 1 Performance test results of silver-based high temperature and high thermal conductivity packaging materials and comparative samples obtained by the present application
As can be seen from Table 1, the thermal conductivity of the silver-based low-temperature high-thermal-conductivity packaging material prepared in examples 1-7 is controlled to be 55-225W/(m.K), and the melting point is controlled to be near the melting point of the low-melting-point solder, namely, the silver-based low-temperature high-thermal-conductivity packaging material prepared in the application has excellent high thermal conductivity and low melting point, and can be well applied to the field of semiconductor low-temperature packaging.
Compared with the application, the comparative sample has low melting point, but has lower heat conductivity of only 19W/(m.K), so that the comparative sample can not well meet the low-temperature packaging requirement of the semiconductor.
3.2 The silver-based high-temperature high-thermal-conductivity packaging material obtained in examples 1 to 7 of the present application and the soldering performance test and results of the comparative sample:
The silver-based high-temperature high-thermal-conductivity packaging materials and the comparison samples obtained in the embodiments 1-7 of the application are respectively used for carrying out SMT reflow soldering operation, the process parameters used in the soldering process are the same, then the smoke size, the thermal stress size, the distribution condition, the post-soldering residue condition and the like in the soldering process are tested, and the test results are shown in the following table 2:
TABLE 2 results of soldering Performance test of silver-based high thermal conductivity packaging Material and comparative sample obtained by the present application
As can be seen from Table 2, when the silver-based low-temperature high-thermal-conductivity packaging material obtained in examples 1-7 of the application is used for SMT reflow soldering operation, no smoke is generated in ① soldering process and no residue is left after soldering, which indicates that the silver-based high-temperature high-thermal-conductivity packaging material obtained in the application has high cleanliness during soldering, which not only ensures no pollution of application places, but also saves cleaning cost after soldering, and ② has small thermal stress and uniform thermal stress distribution during soldering, which indicates that the soldering reliability defect caused by PCB and chip warping risk caused by thermal stress can be well avoided when the silver-based low-temperature high-thermal-conductivity packaging material obtained in the application is used for soldering, and the soldering effect is greatly improved.
For the comparison sample, when SMT reflow soldering operation is performed, the generated thermal stress is large, and the interface binding force between the PCB and the chip is relatively low, so that defects such as product warpage, poor soldering quality and the like are easy to occur. Thus, compared to the present application, the comparative sample does not meet the semiconductor low temperature packaging requirements well.
In summary, through the technical innovation, the silver material with the micro-nano through hole network structure and high heat conductivity is compounded with the low-melting-point solder with high-efficiency low-temperature fusion weldability to prepare the silver-based low-temperature high-heat-conductivity packaging material with compact structure and excellent high heat conductivity, low melting point and other characteristics, so that the packaging requirements of high-heat-conductivity interface heat conduction packaging, low-temperature high-efficiency short-time packaging and the like required by semiconductor packaging can be well met, and the welding effect is effectively improved. In addition, when the silver-based low-temperature high-thermal-conductivity packaging material is used for welding, the welding stress can be effectively reduced, and therefore the welding effect can be further improved. In addition, the silver-based low-temperature high-thermal-conductivity packaging material does not contain soldering flux, so that the limitation of application fields caused by the use of the soldering flux is avoided, the applicability and the universality of the silver-based low-temperature high-thermal-conductivity packaging material are greatly expanded, the high molecular pollution and residues caused by the use of the soldering flux are avoided, the cleanliness, the safety and the welding effect of the silver-based low-temperature high-thermal-conductivity packaging material are greatly improved, and the cleaning cost after welding is saved.
In the above description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The foregoing description is only of a preferred embodiment of the invention, which can be practiced in many other ways than as described herein, so that the invention is not limited to the specific implementations disclosed above. While the foregoing disclosure has been described with reference to certain embodiments, it will be understood by those skilled in the art that various changes and modifications may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. Any simple modification, equivalent variation and modification of the above embodiments according to the technical substance of the present invention without departing from the technical solution of the present invention still falls within the scope of the technical solution of the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411539619.XA CN119035872B (en) | 2024-10-31 | 2024-10-31 | Silver-based low-temperature and high-thermal-conductivity packaging material with double network structure and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202411539619.XA CN119035872B (en) | 2024-10-31 | 2024-10-31 | Silver-based low-temperature and high-thermal-conductivity packaging material with double network structure and preparation method and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN119035872A true CN119035872A (en) | 2024-11-29 |
| CN119035872B CN119035872B (en) | 2025-05-13 |
Family
ID=93579986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202411539619.XA Active CN119035872B (en) | 2024-10-31 | 2024-10-31 | Silver-based low-temperature and high-thermal-conductivity packaging material with double network structure and preparation method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN119035872B (en) |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1004352A (en) * | 1960-12-14 | 1965-09-15 | Gen Electric | Improvements in porous material and method of making such material |
| US20010053456A1 (en) * | 1998-03-06 | 2001-12-20 | David J. Kepniss | Silver-copper-nickel infiltration brazing filler metal and composites made therefrom |
| KR20040041816A (en) * | 2002-11-12 | 2004-05-20 | 최성조 | Process method for the making sintered porous metal body using polymer composite |
| JP2004298962A (en) * | 2003-03-17 | 2004-10-28 | Mitsubishi Materials Corp | Solder joining material and power module substrate utilizing the same |
| CN101007347A (en) * | 2006-12-29 | 2007-08-01 | 西北有色金属研究院 | Preparation method of high porosity metal porous carrier materials |
| KR20090035886A (en) * | 2007-10-08 | 2009-04-13 | 주식회사 아스플로 | Manufacturing method of porous metal membrane |
| JP2010047787A (en) * | 2008-08-19 | 2010-03-04 | Mitsubishi Materials Corp | Method for producing solder-impregnated sheet material and production device therefor |
| CN103153527A (en) * | 2010-08-05 | 2013-06-12 | 千住金属工业株式会社 | Semiconductor device bonding material |
| CN104191057A (en) * | 2014-08-13 | 2014-12-10 | 中国电器科学研究院有限公司 | Preparing method for porous metal matrix compound brazing filler metal alloy soldering head |
| CN106216873A (en) * | 2016-08-12 | 2016-12-14 | 哈尔滨工业大学深圳研究生院 | A kind of high-temp solder preparation method based on metallic tin filled and process silver |
| CN106373954A (en) * | 2016-10-14 | 2017-02-01 | 天津大学 | A kind of sintered IGBT module adopting nano-silver solder paste and its preparation method |
| CN107486651A (en) * | 2017-08-02 | 2017-12-19 | 中国电器科学研究院有限公司 | A kind of preparation method of eutectic welding tablet |
| WO2018042890A1 (en) * | 2016-08-31 | 2018-03-08 | 三菱電機株式会社 | Bonded body and semiconductor device using same |
| CN115116867A (en) * | 2022-04-18 | 2022-09-27 | 天津工业大学 | Sintered silver cushion block with low modulus and high heat conductivity and manufacturing device and method thereof |
-
2024
- 2024-10-31 CN CN202411539619.XA patent/CN119035872B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1004352A (en) * | 1960-12-14 | 1965-09-15 | Gen Electric | Improvements in porous material and method of making such material |
| US20010053456A1 (en) * | 1998-03-06 | 2001-12-20 | David J. Kepniss | Silver-copper-nickel infiltration brazing filler metal and composites made therefrom |
| KR20040041816A (en) * | 2002-11-12 | 2004-05-20 | 최성조 | Process method for the making sintered porous metal body using polymer composite |
| JP2004298962A (en) * | 2003-03-17 | 2004-10-28 | Mitsubishi Materials Corp | Solder joining material and power module substrate utilizing the same |
| CN101007347A (en) * | 2006-12-29 | 2007-08-01 | 西北有色金属研究院 | Preparation method of high porosity metal porous carrier materials |
| KR20090035886A (en) * | 2007-10-08 | 2009-04-13 | 주식회사 아스플로 | Manufacturing method of porous metal membrane |
| JP2010047787A (en) * | 2008-08-19 | 2010-03-04 | Mitsubishi Materials Corp | Method for producing solder-impregnated sheet material and production device therefor |
| CN103153527A (en) * | 2010-08-05 | 2013-06-12 | 千住金属工业株式会社 | Semiconductor device bonding material |
| CN104191057A (en) * | 2014-08-13 | 2014-12-10 | 中国电器科学研究院有限公司 | Preparing method for porous metal matrix compound brazing filler metal alloy soldering head |
| CN106216873A (en) * | 2016-08-12 | 2016-12-14 | 哈尔滨工业大学深圳研究生院 | A kind of high-temp solder preparation method based on metallic tin filled and process silver |
| WO2018042890A1 (en) * | 2016-08-31 | 2018-03-08 | 三菱電機株式会社 | Bonded body and semiconductor device using same |
| CN106373954A (en) * | 2016-10-14 | 2017-02-01 | 天津大学 | A kind of sintered IGBT module adopting nano-silver solder paste and its preparation method |
| CN107486651A (en) * | 2017-08-02 | 2017-12-19 | 中国电器科学研究院有限公司 | A kind of preparation method of eutectic welding tablet |
| CN115116867A (en) * | 2022-04-18 | 2022-09-27 | 天津工业大学 | Sintered silver cushion block with low modulus and high heat conductivity and manufacturing device and method thereof |
Non-Patent Citations (4)
| Title |
|---|
| G.W. MAO ET AL.: "Development of a Controlled Porosity Silver Electrode", 《JOURNAL OF THE ELECTROCHEMICAL SOCIETY》, vol. 117, no. 10, 31 October 1970 (1970-10-31), pages 1319 - 1323, XP001285383 * |
| VINAY SHAH ET AL.: "Pyrolysis of model plastic component polypropylene to hydrogen over mesoporous alumina catalysts: Effect of pluronic structure directing agents", 《JOURNAL OF ANALYTICAL AND APPLIED PYROLYSIS》, vol. 176, 3 November 2023 (2023-11-03), pages 106244 * |
| 曾德麟主编: "《粉末冶金材料》", 30 November 1989, 北京：冶金工业出版社, pages: 77 - 78 * |
| 朱大鹏;王立春;罗乐;: "多孔型氧化铝薄膜在高密度封装中的应用及性能", 功能材料与器件学报, no. 06, 25 December 2007 (2007-12-25) * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN119035872B (en) | 2025-05-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4753090B2 (en) | Solder paste and electronic device | |
| US10090275B2 (en) | Bonding method using bonding material | |
| CN103753049B (en) | Cu@Sn core-shell-structured high-temperature solder and preparation method thereof | |
| EP1582287A1 (en) | Soldered material, semiconductor device, method of soldering, and method of manufacturing semiconductor device | |
| TW201835941A (en) | Conductive paste containing eucalyptus oil | |
| CN110714133B (en) | Silver palladium alloy powder for conductive composition and preparation method thereof | |
| TW201038349A (en) | Metal filler, low-temperature-bonding lead-free solder and bonded structure | |
| CN114101827A (en) | Ceramic heating element electrode brazing process | |
| JP2023153935A (en) | solder paste | |
| CN119035872B (en) | Silver-based low-temperature and high-thermal-conductivity packaging material with double network structure and preparation method and application thereof | |
| CN107335879B (en) | A packaging method for area array | |
| Aisha et al. | Effect of reflow profile on intermetallic compound formation | |
| CN115194363B (en) | Low-melting-point lead-free solder, low-melting-point lead-free solder strip, preparation method and application | |
| JP7434420B2 (en) | Method for producing metal-ceramic substrates | |
| CN110524079A (en) | The silver-copper brazing alloy layer preparation method being brazed for metallized ceramic and metal parts | |
| CN111484254B (en) | A kind of high temperature sealing glass and its preparation method and application | |
| CN116002996A (en) | A kind of encapsulation method of lead-free low-temperature sintering type nano-silver paste and tempered vacuum glass | |
| CN114043122A (en) | A kind of high-temperature solder containing Cu@Sn core-shell bimetallic powder and its preparation method and application | |
| CN113751922A (en) | Lead-free solder and preparation method and application thereof | |
| CN117300434B (en) | Packaging soldering lug and preparation method thereof | |
| WO2017066305A1 (en) | Back-contact solar cell and method for manufacturing the same | |
| CN107297586B (en) | Copper-based amorphous solder balls for area array packaging, preparation method and packaging method thereof | |
| CN114654126B (en) | Silver-coated copper soldering paste and preparation method thereof | |
| JP6511773B2 (en) | Au-Sn alloy solder paste, method of manufacturing Au-Sn alloy solder paste, method of manufacturing Au-Sn alloy solder layer | |
| US20250203784A1 (en) | Sintering Methods |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |