CN119008243A

CN119008243A - Film capacitor for human tumor treatment and preparation method thereof, tumor treatment electrode patch and tumor treatment system

Info

Publication number: CN119008243A
Application number: CN202410513253.2A
Authority: CN
Inventors: 杨泽宇; 郭仪
Original assignee: Chengdu Rotex Technology Co ltd
Current assignee: Chengdu Rotex Technology Co ltd
Priority date: 2023-05-22
Filing date: 2024-04-26
Publication date: 2024-11-22
Also published as: WO2024240156A1

Abstract

The application provides a film capacitor for human tumor treatment and a preparation method thereof, a tumor treatment electrode patch and a tumor treatment system, wherein the film capacitor comprises: a first electrode layer and a second electrode layer; a dielectric layer between the first electrode layer and the second electrode layer; a first defect repair layer located between the second electrode layer and the dielectric layer; the first defect repair layer has conductivity, one surface of the dielectric layer facing the first defect repair layer is provided with micro pits, one surface of the first defect repair layer is tightly combined with the micro pits on the surface of the dielectric layer, and the other surface of the first defect repair layer is directly or indirectly in electrical contact with the second electrode layer. According to the application, the first defect repair layer is arranged on one surface of the dielectric layer, which is away from the first electrode layer, so that the surface defect of one surface of the dielectric layer, which is away from the first electrode layer, is compensated by the first defect repair layer, and the phenomenon of air gap ionization caused by the generation of a tiny gap between the dielectric layer and the corresponding electrode layer is avoided.

Description

Film capacitor for human tumor treatment and preparation method thereof, tumor treatment electrode patch and tumor treatment system

Technical Field

The application relates to the technical field of tumor treatment, in particular to a film capacitor for human tumor treatment, a preparation method thereof, a tumor treatment electrode patch and a tumor treatment system.

Background

At present, various methods for treating tumors exist, such as surgical treatment, radiation treatment, chemical drug treatment, molecular targeting treatment and the like, but the common methods for treating tumors have corresponding disadvantages, such as that the radiation treatment or the chemical drug treatment kills normal cells, and for example, the surgical treatment can cure early tumors, but individual patients are easily damaged due to surgical contraindications.

The tumor is treated by using an alternating electric field, which is one of the current tumor treatment means at the front of research and development, and the tumor electric field treatment is performed by applying an alternating electric field to a human body treatment part, so that the aggregation of tumor tubulin is influenced, the formation of a spindle body is prevented, and the purposes of inhibiting the mitosis process of cancer cells and inducing the apoptosis of the cancer cells are achieved. Specifically, in the existing tumor electric field treatment, electrode patches are mainly attached to two opposite sides of a treatment part of a patient, for example, two sides of the waist of the patient, current is blocked from directly flowing to the patient through film capacitors in the electrode patches, and meanwhile, alternating electric fields are applied to the treatment part of the patient through electrode plates of the film capacitors on the two opposite sides, so that the purpose of tumor treatment is achieved.

In the prior art, in order to ensure the therapeutic effect of tumor electric field treatment, it is generally required to make the thin film capacitor have a sufficiently large capacitance, so that reducing the thickness of the dielectric layer is one of the main ways to increase the capacitance of the thin film capacitor. However, the surface of the dielectric layer is generally uneven and has surface defects, so that tiny gaps exist between the dielectric layer and the electrode layer, and a thinner dielectric layer can generate an air gap ionization phenomenon at the tiny gaps under the voltage application of the two electrode layers, and the air gap ionization phenomenon can cause ionized positive ions and negative ions to be transferred between different layers and respectively move to the negative electrode and the positive electrode of the film capacitor, and discharge spark is generated at the moment of contact with the electrode to cause electrode damage.

Disclosure of Invention

The application provides a thin film capacitor for human tumor treatment, a preparation method thereof, a tumor treatment electrode patch and a tumor treatment system, and aims to solve the technical problem that an air gap ionization phenomenon is caused by surface defects of a dielectric layer in a conventional capacitor.

In a first aspect, the present application provides a film capacitor for use in human tumour therapy, comprising:

a first electrode layer and a second electrode layer;

a dielectric layer between the first electrode layer and the second electrode layer;

A first defect repair layer located between the second electrode layer and the dielectric layer;

Wherein the first defect repair layer has conductivity, one surface of the first defect repair layer is tightly combined with the dielectric layer, and the other surface of the first defect repair layer is directly or indirectly in electrical contact with the second electrode layer.

In some embodiments, the second electrode layer is a finished metal sheet, the second electrode layer having a tensile index greater than the tensile index of the first defect repair layer.

In some embodiments, the second electrode layer has a thickness greater than a thickness of the first defect repair layer.

In some embodiments, a side of the dielectric layer facing away from the first electrode layer has a first roughness and a side of the first defect repair layer facing away from the dielectric layer has a second roughness;

wherein the second roughness is less than or equal to the first roughness.

In some embodiments, the first defect repair layer comprises a plurality of sub-metal layers.

In some embodiments, the first defect-repair layer is a metal layer.

In some embodiments, the first defect repair layer includes an overlapping aluminum metal layer and zinc metal layer; or alternatively

The first defect repair layer comprises an overlapped aluminum metal layer and a gold metal layer; or alternatively

The first defect repair layer includes an overlapping aluminum metal layer and a titanium metal layer.

In some embodiments, the first electrode layer is attached to the dielectric layer.

In some embodiments, the thin film capacitor further comprises a second defect repair layer located between the first electrode layer and the dielectric layer;

wherein the second defect repair layer has conductivity, one surface of the second defect repair layer is tightly combined with the surface of the dielectric layer, and the other surface of the second defect repair layer is directly or indirectly electrically contacted with the first electrode layer.

In some embodiments, the tensile index of the first electrode layer is greater than the tensile index of the second defect repair layer.

In some embodiments, a side of the dielectric layer facing the first electrode layer has a third roughness and a side of the second defect repair layer facing away from the dielectric layer has a fourth roughness;

Wherein the fourth roughness is less than or equal to the third roughness.

In some embodiments, the dielectric layer includes a first insulating layer and a second insulating layer that are tightly bonded to each other;

The first defect repair layer is tightly combined with one surface, deviating from the first insulating layer, of the second insulating layer, and the insulating strength of the second insulating layer is larger than that of the first insulating layer.

In some embodiments, the first defect repair layer has a thickness of 10nm to 1000nm, and the tolerance value of the first defect repair layer is ±10% of its thickness value.

In some embodiments, the first defect-repair layer has a thickness of 10nm to 800nm.

In some embodiments, the first defect-repair layer has a thickness of 50nm to 450nm.

In some embodiments, the first defect-repair layer has a total thickness of 10nm to 400nm of the sub-metal layer having conductivity superior to or equal to that of metallic aluminum;

in some embodiments, the first defect-repair layer has a total thickness of 50nm to 400nm of the sub-metal layer having an electrical conductivity superior to or equal to that of metallic aluminum;

in some embodiments, the dielectric layer has a thickness of 1um to 100um.

In some embodiments, the dielectric layer has a thickness of 1um to 10um.

In some embodiments, the dielectric layer has a thickness of 2um to 8um.

In some embodiments, the thin film capacitor further comprises a flexible substrate;

the first electrode layer is attached to the flexible substrate.

In a second aspect, the present application provides a method for preparing a thin film capacitor for tumor treatment in a human, comprising:

Providing a first electrode layer;

forming a dielectric layer on the first electrode layer;

forming a first defect repair layer on one surface of the dielectric layer, which is away from the first electrode layer;

forming a second electrode layer on one surface of the dielectric layer, which is away from the first defect repair layer;

The first defect repair layer has conductivity, one surface of the first defect repair layer is tightly combined with the surface of the dielectric layer, and the other surface of the first defect repair layer is directly or indirectly in electrical contact with the second electrode layer.

wherein the second roughness is less than or equal to the first roughness.

In a third aspect, the present application provides a tumor treating electrode patch comprising a film capacitor as described in the first aspect.

In a fourth aspect, the present application provides a tumour therapy system comprising a tumour therapy electrode patch according to the third aspect.

In the film capacitor in the prior art, the dielectric layer and the electrode layer cannot be tightly combined due to the appearance defect or unevenness and the like on the surface of the dielectric layer, so that an air gap ionization phenomenon is generated; according to the application, the defect repair layer is arranged between the dielectric layer and the electrode layer, so that the air gap ionization phenomenon caused by the generation of a tiny gap between the dielectric layer and the corresponding electrode layer is avoided; meanwhile, due to the adoption of the conductive defect repair layer, the electric connection between the electrode layer and the electrode layer is more stable, and the safety of the film capacitor in the tumor treatment electrode patch is guaranteed.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic view of a structure of a thin film capacitor provided in an embodiment of the present application;

FIG. 2 is a schematic view of another structure of a thin film capacitor provided in an embodiment of the present application;

FIG. 3 is a schematic view of another structure of a thin film capacitor provided in an embodiment of the present application;

FIG. 4 is a schematic view of another structure of a thin film capacitor provided in an embodiment of the present application;

FIG. 5 is a schematic view showing another structure of a thin film capacitor provided in an embodiment of the present application;

fig. 6 is another structural schematic diagram of a thin film capacitor provided in an embodiment of the present application;

fig. 7 is a schematic view of another structure of a thin film capacitor provided in an embodiment of the present application;

fig. 8 is another structural schematic diagram of a thin film capacitor provided in an embodiment of the present application;

Fig. 9 is another structural schematic diagram of a thin film capacitor provided in an embodiment of the present application;

FIG. 10 is a schematic flow chart of a method for manufacturing a thin film capacitor according to an embodiment of the present application;

FIG. 11 is a schematic flow chart of another method for manufacturing a thin film capacitor according to an embodiment of the present application;

fig. 12 is a schematic view of measurement of bending angle of a thin film capacitor according to an embodiment of the present application.

The semiconductor device comprises a first electrode layer 10, a dielectric layer 20, a first insulating layer 21, a second insulating layer 22, a first micro pit 201, a second micro pit 202, a first defect repair layer 30, an aluminum metal layer 31, a zinc metal layer 32, a metal layer 301, a second electrode layer 40, a second defect repair layer 50, a flexible substrate 60, a flexible conductive layer 70 and a conductive adhesion layer 80.

Detailed Description

The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application.

In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.

In the present application, the term "exemplary" is used to mean "serving as an example, instance, or illustration. Any embodiment described as "exemplary" in this disclosure is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is presented to enable any person skilled in the art to make and use the application. In the following description, details are set forth for purposes of explanation. It will be apparent to one of ordinary skill in the art that the present application may be practiced without these specific details. In other instances, well-known structures and processes have not been described in detail so as not to obscure the description of the application with unnecessary detail. Thus, the present application is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.

The embodiment of the application provides a thin film capacitor for human tumor treatment, a preparation method thereof, a tumor treatment electrode patch and a tumor treatment system, which are respectively described in detail below.

Referring first to fig. 1, fig. 1 shows a schematic structural diagram of a thin film capacitor according to an embodiment of the present application, where the thin film capacitor includes:

a first electrode layer 10 and a second electrode layer 40;

a dielectric layer 20, the dielectric layer 20 being located between the first electrode layer 10 and the second electrode layer 40;

a first defect-repair layer 30, the first defect-repair layer 30 being located between the second electrode layer 40 and the dielectric layer 20;

wherein the first defect repair layer 30 has conductivity, one surface of the first defect repair layer 30 is closely combined with the surface of the dielectric layer 20, and the other surface is directly or indirectly electrically contacted with the second electrode layer 40.

Specifically, the first electrode layer 10 and the second electrode layer 40 are made of a conductive material, which constitutes electrodes of the film capacitor connected to both ends of the ac power source, so that an ac voltage signal is supplied to the film capacitor through the first electrode layer 10. In some embodiments of the present application, the first electrode layer 10 and the second electrode layer 40 may be thin and flexible metal layers, such as metal copper foil, so that the first electrode layer 10 has better flexibility and is convenient to bend, and thus the thin film capacitor is bent as a whole and is better fitted with the skin surface of the human body.

In some embodiments of the application, the thickness of the first electrode layer 10 is 0.005mm-1mm. Preferably, the thickness of the first electrode layer 10 is 0.01-0.1mm. More preferably, the thickness of the first electrode layer 10 is 0.01 to 0.05mm. The thickness of the first electrode layer 10 satisfies the above range, and on one hand, flexibility of the first electrode layer 10 can be ensured, and on the other hand, the phenomenon that the first electrode layer 10 is too thin to cause cracking thereof can be prevented.

It will be appreciated that the first electrode layer 10 and the second electrode layer 40 may also be made of other metallic or non-metallic conductive materials, such as metallic silver foil or conductive graphite, etc.

In some embodiments of the present application, the first electrode layer 10 may refer to a corresponding metal layer on a circuit board, for example, a portion of a copper foil area is exposed on the circuit board, and the dielectric layer 20 is formed in the copper foil area, and a power interface of the circuit board may facilitate connection of two poles of a power source. Preferably, the circuit board may be a flexible circuit board, for example, a flexible printed circuit board made of polyimide or mylar as a base material, so as to make the film capacitor flexible while simplifying the electrical connection structure of the film capacitor.

In some embodiments of the present application, the second electrode layer 40 may be a thin and flexible metal layer, such as a 0.1mm to 1mm thick metal copper foil, so that the second electrode layer 40 is flexible and easy to bend, thereby allowing the thin film capacitor to be entirely bent and fully abutted against the skin surface of the human body. It will be appreciated that the second electrode layer 40 may also be made of other metallic or non-metallic conductive materials, such as metallic silver foil, conductive graphite, conductive hydrogel or conductive silicone gel, etc.

In some embodiments of the present application, the second electrode layer 40 of the film capacitor is closer to the skin surface of the human body, while the first electrode layer 10 of the film capacitor is farther from the skin surface of the human body.

In some embodiments of the present application, for example, in the case that the second electrode layer 40 is closer to the skin surface of the human body, the second electrode layer 40 is preferably a stainless steel metal layer or a titanium metal layer, and since sweat oozed out from the skin of the human body or moisture generated from hydrogel attached to the skin surface of the thin film capacitor may be soaked into the thin film capacitor when the tumor treating electrode patch is attached to the skin surface of the human body, the second electrode layer 40 is preferably a stainless steel metal layer or a titanium metal layer, on one hand, corrosion phenomena of the second electrode layer 40 may be prevented, and on the other hand, moisture may be blocked from being soaked into the dielectric layer 20 inside the thin film capacitor, so that breakdown phenomena of the dielectric layer 20 due to moisture may be avoided.

In some embodiments of the present application, the thickness of the second electrode layer 40 is 0.005mm-1mm. Preferably, the thickness of the second electrode layer 40 is 0.01-0.1mm. More preferably, the thickness of the second electrode layer 40 is 0.01 to 0.05mm. The thickness of the second electrode layer 40 satisfies the above range, and on one hand, flexibility of the second electrode layer 40 can be ensured, and on the other hand, the phenomenon that the second electrode layer 40 is too thin to cause cracking thereof can be prevented.

The dielectric layer 20 is made of an insulating material and can prevent current from flowing therethrough so as to prevent the current received by the first electrode layer 10 of the film capacitor from directly acting on the human body. In some embodiments of the present application, the dielectric layer 20 may be made of an organic material or an inorganic material, such as ceramic, glass, mica, polypropylene, polystyrene, polyethylene terephthalate, or the like.

Preferably, the material of the dielectric layer 20 may comprise one or more of poly (VDF-TrFE-CTFE) (poly (vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene)), poly (VDF-TrFE-CFE) (poly (vinylidene fluoride-trifluoroethylene-1-chlorofluoroethylene)), poly (VDF-TrFECFE-CTFE) (poly (vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene-chlorofluoroethylene)), poly (VDF-DB) (poly (vinylidene fluoride-diethylene glycol butyl ether)), which, due to its relatively high dielectric constant, helps to increase the capacitance of the film capacitor at a certain thickness and area of the dielectric layer 20, thereby better applying the tumor treatment alternating electric field to the patient treatment site.

In some embodiments of the present application, the present inventors conducted the following experiment one with respect to the effect of different dielectric layer thicknesses on the performance of thin film capacitors:

The purpose of the experiment is as follows: verifying the performance influence of different dielectric layer thickness values on the thin film capacitor for human tumor treatment;

Experimental protocol: preparing a first electrode layer 10 made of copper gold-plated materials and a second electrode layer 40 made of conductive hydrogel, wherein the defect repair layer 30 is of a composite structure of an aluminum metal layer with the thickness of 100nm and a titanium metal layer with the thickness of 100nm, and the defect repair layer 30 is positioned on one side of the dielectric layer facing the second electrode layer 40; the areas of the first electrode layer 10, the dielectric layer 20, the defect repair layer 30 and the second electrode layer 40 were all 3.14 square cm and were stacked in the vertical direction, based on which a plurality of film capacitor samples having the same size and different thicknesses of the dielectric layer 20 (polyimide/PVDF-TrFE-CFE) were prepared and tested as follows:

(1) Setting the test environment temperature to 25 ℃;

(2) Starting KEYSIGHT E4980AL LCR digital source table, setting test voltage to 1V, setting test frequency to 200kHz, and selecting Cs-D (capacitance-loss) mode by test mode;

(3) Two testing pliers of the digital source meter are electrically connected and conducted with the first electrode layer 10, and the other testing pliers are electrically connected and conducted with a testing electrode attached to one side, far away from the dielectric layer, of the second electrode layer 40;

(4) And recording the tested Cs value as the capacitance value.

(5) After the steps are finished, preparing an RK2670YL voltage withstand tester, and adjusting the leakage current of the voltage withstand tester to be 20mA leakage current grade;

(6) Electrically connecting a positive test terminal of the withstand voltage tester to the second electrode layer 40;

(7) The negative electrode of the voltage withstand tester is electrically connected to the first electrode layer 10, a switch of the voltage withstand tester is started, the voltage is slowly increased, when the leakage current exceeds 20mA, the instrument can give an alarm, and the voltage value when the alarm is read is the voltage withstand value.

The experimental results obtained by the test are as follows:

As can be seen from the above experimental data and experimental results, the capacitance value of the thin film capacitor is continuously reduced and the compressive strength thereof is gradually increased along with the increasing thickness of the dielectric layer, so that the thickness of the dielectric layer 20 is 1um to 10um in some embodiments of the present application under the comprehensive consideration of ensuring both the capacitance value and the compressive strength of the thin film capacitor; preferably, the thickness of the dielectric layer 20 is 2um to 8um. The thickness of the dielectric layer 20 meets the above-mentioned size requirement, so that the thin film capacitor has a high capacitance, and meanwhile, the breakdown phenomenon of the thin film capacitor caused by the thinness of the dielectric layer 20 can be avoided.

In some embodiments of the present application, the dielectric layer 20 may be formed on the first electrode layer 10 by spin coating, doctor blading, atomization, casting, or screen printing. In other embodiments of the present application, the dielectric layer 20 is attached to the first electrode layer 10 either indirectly or directly by way of a finished film.

It should be noted that, whether the dielectric layer 20 is formed on the first electrode layer 10 by a solution preparation method or a finished film bonding method, the surface of the dielectric layer 20 has surface defects, and gaps between the dielectric layer and the electrode layer are caused due to the defects that may be surface irregularities and micro pits or micro protrusions; for example, the surface of the dielectric layer 20 facing the first defect repair layer 30 has microscopic pits, and the surface defect refers to the phenomenon that the surface of the dielectric layer 20 (or the finished film of the dielectric layer 20) is rugged after formation.

The first defect repair layer 30 has one side closely bonded to the microscopic pits of the surface of the dielectric layer 20 and the other side in direct or indirect electrical contact with the second electrode layer 40. Specifically, the first defect repair layer 30 is attached to a surface of the dielectric layer 20 facing away from the first electrode layer 10, and the surface of the first defect repair layer 30 can be tightly combined with the micro pits on the surface of the dielectric layer 20, so that the first defect repair layer 30 can make up for the surface defect of the surface of the dielectric layer 20 facing away from the first electrode layer 10, and further avoid an air gap ionization phenomenon caused by the generation of micro gaps between the dielectric layer 20 and the corresponding electrode layer (e.g. the second electrode layer 40) or between the dielectric layer 20 and the first defect repair layer 30. In some embodiments of the present application, the first defect repair layer 30 has conductivity, avoiding increasing the thickness of the thin film capacitor dielectric layer 20, to ensure the capacitance of the thin film capacitor.

In some embodiments of the present application, the first defect-repair layer 30 is a metal layer. In some embodiments of the present application, the material of the first defect repair layer 30 may be one or a combination of several of Al, ti, au, ag, zn, cu, pt, cr, fe, sn or Ni, for example, the first defect repair layer 30 includes a layer of Al material, a layer of Zn material, and a layer of Ag material that are sputtered magnetically in sequence, and for example, the first defect repair layer 30 includes a layer of Al material or a layer of Au material that are sputtered magnetically. In some embodiments of the present application, the first defect-repair layer 30 may be formed by spin coating or spraying a non-metallic conductive material such as graphite, conductive silicon, or the like.

In some embodiments of the present application, referring to fig. 2, fig. 2 shows another schematic structure of the thin film capacitor of the present application, where the first defect repair layer 30 includes a plurality of sub-metal layers 301, and the plurality of sub-metal layers are disposed, so that the sub-metal layer 301 far from the dielectric layer 20 can further protect the sub-metal layer 301 close to the dielectric layer, and ensure the service strength and service life of the sub-metal layer 301; secondly, when the sub-metal layer far away from the dielectric layer adopts a metal material with more stable oxidation resistance (namely, relatively more stable metal activity) than the sub-metal layer near the dielectric layer, the phenomenon that the sub-metal layer 301 near the dielectric layer is oxidized can also be avoided, and finally, in the film capacitor, on the premise that the conductivity of the defect repair layer is better, the better working performance of the film capacitor (particularly, the smaller energy loss in the working process of the film capacitor) can be ensured, so that when the structure arrangement of the multi-layer sub-metal layer is adopted, under the condition that the working performance of the film capacitor is influenced (such as the condition that the electric connectivity is influenced after oxidation and the normal working is not realized) due to the fact that the sub-metal layer near the dielectric layer is easily oxidized, the metal material with better conductivity can be selected to be arranged near the dielectric layer, and the overall conductivity of the defect repair layer in the film capacitor is better can be ensured, and the effect is achieved.

As an exemplary embodiment, referring to fig. 3, fig. 3 shows another schematic structure of a thin film capacitor according to the present application, wherein the first defect repair layer 30 includes an overlapped aluminum metal layer 31 and a zinc metal layer 32, the aluminum metal layer 31 is located between the zinc metal layer 32 and the dielectric layer 20, that is, the aluminum metal layer 31 covers the dielectric layer 20 first, and then the zinc metal layer 32 covers the aluminum metal layer 31, and the aluminum metal layer 31 has better ductility and conductivity, so that the phenomenon that the aluminum metal layer 31 cracks when the thin film capacitor is bent can be avoided as much as possible; meanwhile, the zinc metal layer 32 has good ductility and stable chemical properties, and can avoid the phenomenon that the zinc metal layer 32 cracks and protect the aluminum metal layer 31 from oxidation failure.

In some embodiments of the present application, the first defect repair layer includes an aluminum metal layer and a gold (Au) metal layer that are overlapped, and the aluminum metal layer is located between the gold (Au) metal layer and the dielectric layer 20, so that the gold (Au) metal layer with more stable chemical properties protects the aluminum metal layer.

In some embodiments of the present application, the first defect repair layer includes an aluminum metal layer and a titanium metal layer that are overlapped, and the aluminum metal layer is protected by the titanium metal layer with stable chemical properties and high structural strength.

It can be understood that the first defect repair layer 30 may further include a plurality of aluminum metal layers 31 and zinc metal layers 32 (or gold (Au) metal layers, titanium metal layers) that are disposed to be staggered with each other, that is, the adjacent aluminum metal layers 31 have the zinc metal layers 32 therebetween and the adjacent zinc metal layers 32 have the aluminum metal layers 31 therebetween, so that the plurality of aluminum metal layers 31 and the zinc metal layers 32 disposed to be staggered with each other serve as the plurality of sub-metal layers 301 and prevent the first defect repair layer 30 from crack transmission; or the first defect-repair layer 30 may also comprise multiple sub-metal layers of different materials (e.g., aluminum, silver, zinc, titanium, and gold) or sub-metal layers of the same material (e.g., aluminum).

In some embodiments of the present application, the present inventors conducted the following experiment two with respect to the effect of different thicknesses of the sub-metal layer in the defect repair layer on the performance of the thin film capacitor:

The purpose of the experiment is as follows: verifying that the conductivity is better than or equal to the total thickness value of the stable film formation of the sub-metal layer of metallic aluminum based on the performance impact of the film capacitor for human tumor treatment;

Experimental protocol: preparing a first electrode layer 10 made of copper gold-plated material and a second electrode layer 40 made of conductive hydrogel, wherein the thickness of the dielectric layer 20 (polyimide/PVDF-TrFE-CFE) is 5um, and the defect repair layer 30 is positioned on one side of the dielectric layer 20 facing the second electrode layer 40; the areas of the first electrode layer 10, the dielectric layer 20, the defect repair layer 30 and the second electrode layer 40 are 3.14 square centimeters and are stacked in the vertical direction, and based on the areas, a plurality of thin film capacitor samples with the same size and with different thicknesses of sub-metal layer aluminum in the defect repair layer 30 are respectively prepared; and tested as follows:

(1) Setting the temperature of the test environment to 25 ℃;

(2) Starting KEYSIGHT E4980AL LCR digital source table, setting test voltage to 1V, setting test frequency to 200kHz, and selecting Cs-D (capacitance-loss) mode in test mode;

(3) Two testing pliers of the digital source meter are electrically connected and conducted with the first electrode layer 10, and the other testing pliers are electrically connected and conducted with a testing electrode attached to one side, away from the dielectric layer, of the second electrode layer 40;

(4) The Cs value of the record test is the capacitance value, and the D value is the dielectric loss tangent value;

(5) And (3) judging the film forming condition of the sub-metal layer based on the data obtained in the step (4).

The experimental results obtained by the test are shown in table a:

the conductivity was verified to be better than or equal to the film thickness of the sub-metal layer of metallic aluminum:

The experimental data in table a shows that when the thickness of the sub-metal layer is 1nm, the capacitance value and the dielectric loss value of the sub-metal layer cannot be read, so that the sub-metal layer is judged to be not formed into a film, but the measurement observation shows that when the thickness of the defect repair layer reaches 10nm, the air gap ionization phenomenon is weak, which indicates that the defect repair layer can fill the pits with the micro-size on the surface of the dielectric layer 20 to a certain extent, so that the defect repair layer with the thickness can also improve the air gap ionization; comparing the three groups of experimental data of experiment 2, experiment 3 and experiment 4, it can be known that the capacitance values of the thin film capacitors in experiment 2, experiment 3 and experiment 4 are normal data, but the dielectric loss value of the corresponding thin film capacitor in experiment 2 is far greater than that of experiment 3 and experiment 4, so that the sub-metal layer with the thickness of 10nm is judged to have no good film formation; in summary, the sub-metal layer of 10nm or less cannot stably form a film. Thus, in some embodiments of the present application, the first defect repair layer is selected to have a total thickness greater than 10nm of the sub-metal layer having a conductivity better than or equal to that of metallic aluminum.

The second electrode layer and the defect repairing layer of the film capacitor are arranged in a lamination way, and the possibility of air exists between the contact surfaces of the second electrode layer and the defect repairing layer, so that the capacitance value, the dielectric loss and the like of the film capacitor are adversely affected, and the research and development personnel experiments of the application find that when the defect repairing layer adopts the sub-metal layer with the resistivity being superior to or equal to that of aluminum metal, the dielectric loss of the film capacitor can be effectively reduced, and the comprehensive performance of the film capacitor is improved, so that the fact that the sub-metal layer with the resistivity being superior to or equal to that of aluminum metal is one of important factors affecting the performance of the film capacitor is known, and therefore:

in some embodiments of the present application, the present inventors conducted the following experiment three with respect to the effect of different thicknesses of the sub-metal layer in the defect repair layer on the performance of the thin film capacitor:

The purpose of the experiment is as follows: verifying the performance influence of different values of the total thickness of the sub-metal layers with conductivity superior to or equal to that of metal aluminum on the thin film capacitor for treating human tumor;

Experimental protocol: preparing a first electrode layer 10 made of copper gold-plated material and a second electrode layer 40 made of conductive hydrogel, wherein the thickness of the dielectric layer 20 (polyimide/PVDF-TrFE-CFE) is 5um, and the defect repair layer 30 is positioned on one side of the dielectric layer 20 facing the second electrode layer 40; the areas of the first electrode layer 10, the dielectric layer 20, the defect repair layer 30 and the second electrode layer 40 are 3.14 square centimeters and are stacked in the vertical direction, and based on the areas, a plurality of film capacitor samples with the same size and different thicknesses and with the sub-metal layers being aluminum and titanium are prepared respectively; and tested as follows:

(1) Setting the temperature of the test environment to 25 ℃;

(5) Taking down the sample, repeatedly bending the film capacitor sample by hands for three times (the bending angle is approximately equal to 90 DEG), and observing whether the film capacitor sample has obvious folds, if so, indicating that the film capacitor is brittle;

(6) If the film capacitor after bending in the step (5) has no crease, repeating the steps (1) to (4), comparing whether the capacitance values of the film capacitor before and after bending change, and if not, indicating that the film capacitor is not brittle; conversely, the film capacitor is also indicated as brittle.

Examples 1 to 9 were tested as shown in table B:

verifying that the conductivity is better than or equal to the sub-metal layer thickness selection of metallic aluminum:

Comparative example

Film capacitor comparative example the film capacitor comparative example was substantially the same as that of examples 1 to 9 except that the film capacitor comparative example was not provided with the defect repair layer 30, and tested to obtain a film capacitor comparative example shown in table C:

comparative experimental data for film capacitor:

as can be seen from the above table B and table C, the air gap ionization of the thin film capacitors prepared in examples 1 to 8 of the present embodiment is significantly weaker than that of the thin film capacitors of the comparative example, which demonstrates that the present application significantly improves the air gap ionization phenomenon caused by the generation of minute voids between the dielectric layer and the corresponding electrode layer, and at the same time, makes the electrical connection with the electrode layer more stable.

Meanwhile, as shown in table B, under the condition that the film forming thickness of the titanium metal layer is ensured, along with the continuous increase of the total thickness of the sub-metal layer, the dielectric loss of the film capacitor generally decreases to a stable trend, but when the total thickness of the first defect repair layer is too thick, the phenomenon of brittle fracture caused by bending of the film capacitor occurs, which means that the total thickness of the first defect repair layer is not too thick, or the defect repair layer in the film capacitor is easily bent to cause brittle fracture, thereby influencing the service performance of the film capacitor. To account for the performance data variations, in some embodiments of the present application, the total thickness of the sub-metal layers of the first defect repair layer having conductivity superior to or equal to that of the metal aluminum is preferably 10nm to 400nm, e.g., for embodiments in which the first defect repair layer comprises overlapping aluminum metal layers and titanium metal layers, the total thickness of the aluminum metal layers is 10nm to 400nm; for another example, for embodiments in which the first defect repair layer comprises overlapping aluminum metal layers and gold metal layers, the total thickness of the aluminum metal layers and the gold metal layers is preferably 10nm-400nm; for another example, for embodiments in which the first defect repair layer comprises overlapping gold and copper metal layers, the total thickness of the gold and copper metal layers is preferably 10nm-400nm.

Preferably, the total thickness of the sub-metal layers of the first defect repair layer having a conductivity better than or equal to that of metallic aluminum is in the range of 50nm to 400nm, e.g. for embodiments in which the first defect repair layer comprises overlapping layers of aluminum metal and titanium metal, the total thickness of the aluminum metal layers is in the range of 50nm to 400nm; for another example, for embodiments in which the first defect repair layer comprises overlapping aluminum metal layers and gold metal layers, the total thickness of the aluminum metal layers and the gold metal layers is 50nm-400nm; for another example, for embodiments in which the first defect repair layer includes overlapping gold and copper metal layers, the total thickness of the gold and copper metal layers is 50nm-400nm.

In some embodiments of the present application, the first defect repair layer 30 may be formed on a side of the dielectric layer 20 facing away from the first electrode layer 10 by means of magnetron sputtering, and during the magnetron sputtering process, target atoms or molecules with small diameters generated by ion bombardment sputtering of a target material (for example, aluminum) may be deposited and enter into pits with small dimensions on the surface of the dielectric layer 20, so that surface defects (micro pits) of the dielectric layer 20 are compensated, and one side of the first defect repair layer 30 is tightly combined with the micro pits on the surface of the dielectric layer 20. In some embodiments of the present application, the first defect repair layer 30 may also be formed on a surface of the dielectric layer 20 facing away from the first electrode layer 10 by electron beam evaporation, in which the coating material (e.g. zinc) is bombarded by accelerated electrons during the electron beam evaporation, and kinetic energy of the electrons is converted into thermal energy to heat and evaporate the coating material, so as to form the first defect repair layer 30 on the surface of the dielectric layer 20.

In some embodiments of the present application, for example, for the embodiment in which the first defect repair layer 30 includes the aluminum metal layer 31 and the zinc metal layer 32 overlapped, when preparing the first defect repair layer 30, the aluminum metal layer 31 may be formed on the surface of the dielectric layer 20 by magnetron sputtering, and then the zinc metal layer 32 may be formed on the aluminum metal layer 31 by magnetron sputtering.

In some embodiments of the present application, the first defect repair layer 30 has a thickness of 10nm to 1000nm when not bent or when the bending angle is small (bending angle is not less than 135 °), and the tolerance value of the first defect repair layer is ±10% of the thickness value thereof. Preferably, the first defect-repair layer 30 has a thickness of 10nm to 800nm. More preferably, the first defect-repair layer 30 has a thickness of 50nm to 450nm. Wherein, the first defect repair layer 30 satisfying the above-mentioned size range can have good flexibility, and can also prevent the first defect repair layer 30 from being bent easily to crack due to being too thick or from being unable to completely cover the dielectric layer 20 due to being too thin.

In some embodiments of the present application, for example, for the first defect repair layer 30 comprising an overlapping aluminum metal layer 31 and zinc metal layer 32, the thickness of the aluminum metal layer 31 is 10nm to 1000nm, and the thickness of the zinc metal layer 32 is 10nm to 1000nm.

It will be appreciated that the first defect-repair layer 30 may also be formed on the surface of the dielectric layer 20 by physical vapor deposition, for example, arc plasma plating, ion plating, molecular beam epitaxy, etc., so as to compensate for the surface defect of the dielectric layer 20.

In the embodiment of the present application, the first defect repair layer 30 is disposed between the dielectric layer 20 and the second electrode layer 40, and since one surface of the first defect repair layer 30 is tightly combined with the micro pits on the surface of the dielectric layer 20, the air gap ionization phenomenon caused by the generation of micro gaps between the dielectric layer 20 and the corresponding second electrode layer 40 is avoided, and finally the partial volatilization or gasification damage of the electrode layer (for example, the second electrode layer 40) caused by the air gap ionization is prevented, and if the defect repair layer is not added, the overall capacitance is reduced due to the fact that air is easy to exist between the dielectric layer 20 and the second electrode layer 40, the defect repair layer is added, and the good capacitance of the transducer is ensured due to the fact that the air can be discharged to a certain extent.

In some embodiments of the present application, the second electrode layer 40 is a finished metal sheet, and the tensile index of the second electrode layer 40 is greater than the tensile index of the first defect repair layer 30.

In the course of the research, the inventors found that, during the tumor treatment of the film capacitor, since the film capacitor needs to be close to the skin of the human body and may have a bending phenomenon, sweat etc. may be generated when worn for more than a certain period of time, the second electrode layer 40 close to the skin side of the human body needs to have a waterproof function and a crack preventing function to prevent sweat exuded from the skin of the human body or water vapor generated from hydrogel from immersing into the film capacitor, and the second electrode layer 40 is directly formed on the surface of the dielectric layer 20 in a physical vapor deposition manner, although a minute gap between the second electrode layer 40 and the dielectric layer 20 may be eliminated, the deposited second electrode layer 40 may easily generate a crack phenomenon after the film capacitor is bent, thereby causing sweat exuded from the skin of the human body or water vapor generated from hydrogel to immersing into the film capacitor.

In the above embodiment, since the second electrode layer 40 used in the film capacitor for tumor treatment is a finished metal sheet, and the tensile index of the second electrode layer 40 is larger than that of the first defect repair layer 30, the cracking phenomenon of the second electrode layer 40 during bending of the film capacitor can be prevented, so as to avoid the sweat exuded from the skin of the human body or the water vapor generated by hydrogel from immersing into the film capacitor, and meanwhile, no micro gap exists between the first defect repair layer 30 and the dielectric layer 20, so that no air gap ionization phenomenon occurs, and finally, a waterproof and air gap ionization preventing film capacitor for tumor treatment is provided.

It should be noted that the tensile index refers to the tensile force of the sample (the second electrode layer 40 or the first defect repair layer 30), which shows the maximum tensile force that the sample is subjected to before breaking. In some embodiments of the present application, the tensile index of the second electrode layer 40 may be the maximum tensile force it is subjected to before breaking. In some embodiments of the present application, the tensile index of the first defect repair layer 30 may be the maximum tensile force it is subjected to before breaking.

In some embodiments of the present application, the thickness of the second electrode layer 40 is greater than the thickness of the first defect repair layer 30, and the thicker second electrode layer 40 has a greater tensile index, which is beneficial for ensuring that the tensile index of the second electrode layer 40 is greater than the tensile index of the first defect repair layer 30; at the same time, the thicker second electrode layer 40 has better physical protection performance, and ensures the stability of electrical connection.

In some embodiments of the present application, referring to fig. 4, fig. 4 shows another schematic structure of a thin film capacitor according to an embodiment of the present application, where a side of the dielectric layer 20 facing away from the first electrode layer 10 has a first roughness, and a side of the first defect repair layer 30 facing away from the dielectric layer 20 has a second roughness; wherein the second roughness is less than or equal to the first roughness.

Preferably, the second roughness is smaller than the first roughness, after the first defect repair layer 30 is formed on the dielectric layer 20, since the first defect repair layer 30 is tightly combined with the micro pits of the dielectric layer 20, the pits with larger size corresponding to the first roughness of the dielectric layer 20 are partially filled, so that the level difference caused by the micro pits is reduced, the second roughness of the surface of the first defect repair layer 30 facing away from the dielectric layer 20 is smaller, after the second electrode layer 40 is attached to the first defect repair layer 30, the point discharge phenomenon between the second electrode layer 40 and the first defect repair layer 30 can be reduced, that is, by arranging the first defect repair layer 30 with smaller roughness and tightly combined on the dielectric layer, on one hand, the air gap ionization phenomenon between the insulating material layer (dielectric layer 20) and the conductive material layer (first defect repair layer 30) is effectively prevented, and on the other hand, the point discharge phenomenon between the two conductive material layers (second electrode layer 40 and the first defect repair layer 30) is relieved.

The roughness (first roughness, second roughness, third roughness, or fourth roughness) referred to in the present application may refer to an arithmetic average value of a profile offset of an object in a sampling length, may refer to a sum of an average value of a plurality (e.g., 5) of maximum profile peak heights and an average value of a plurality (e.g., 5) of maximum profile valley depths of the object in the sampling length, and may refer to a distance between a profile peak top line and a profile valley bottom line in the sampling length of the object. In measuring the first roughness and the second roughness, an Atomic Force Microscope (AFM) or a Scanning Probe Microscope (SPM) may be used to measure the surface roughness of the first defect repair layer 30, and then the surface roughness of the dielectric layer 20 is measured after the first defect repair layer 30 is removed, for example, the first defect repair layer 30 is removed by chemical etching, and then the scanning probe microscope is used to measure the surface roughness of the dielectric layer 20; alternatively, the thin film capacitor may be sectioned by a section plane perpendicular to the dielectric layer 20, and a cross-sectional view of the thin film capacitor may be enlarged by an electron microscope, and the corresponding roughness may be finally calculated by a contour line between interfaces (for example, an interface between the dielectric layer 20 and the first defect repair layer 30 or a surface contour line of the first defect repair layer 30, etc.).

In some embodiments of the present application, with continued reference to fig. 4, wherein a side of the dielectric layer 20 facing away from the first electrode layer 10 has a plurality of first microscopic recesses 201; the first defect repair layer 30 is closely bonded to the inner wall surface of the first micro pits 201.

Specifically, the first micro-pits 201 of the dielectric layer 20 are formed after the dielectric layer 20 is prepared, for example, after the dielectric layer 20 is prepared by an atomization method, pit structures on the surface of the dielectric layer 20 correspond to the first micro-pits 201, so that the first micro-pits 201 form surface defects of the dielectric layer 20 facing the second electrode layer 40, and the first defect repair layer 30 may be tightly combined with the inner wall surface of the first micro-pits 201 to compensate for the surface defects of the dielectric layer 20. For example, when the first defect repair layer 30 is prepared by magnetron sputtering, atoms or molecules generated by the magnetron sputtering may enter and fill the first micro pits 201 more, so that the first micro pits 201 are partially filled, thereby reducing a level difference of the surface of the dielectric layer caused by the first micro pits 201.

In some embodiments of the present application, the first electrode layer 10 is attached to the dielectric layer 20. In some embodiments of the present application, the dielectric layer 20 may be formed using the first electrode layer 10 as a substrate, for example, the dielectric layer 20 is formed on the first electrode layer 10 by an atomization method.

Further, in some embodiments of the present application, with continued reference to fig. 5, fig. 5 shows another schematic structure of a thin film capacitor according to an embodiment of the present application, where the thin film capacitor further includes a flexible conductive layer 70, and the flexible conductive layer 70 is located between the second electrode layer 40 and the first defect repair layer 30, and two sides of the flexible conductive layer 70 are respectively adhered to the second electrode layer 40 and the first defect repair layer 30.

It should be noted that, the flexible conductive layer 70 has conductivity and a certain elastic modulus, so that the flexible conductive layer 70 electrically connects the second electrode layer 40 with the first defect repair layer 30, so as to ensure electrical connectivity between the second electrode layer 40 and the first defect repair layer 30, and meanwhile, the elastic modulus of the flexible conductive layer 70 can avoid a phenomenon of tiny gaps between the second electrode layer 40 and the first defect repair layer 30, and prevent a tip ionization phenomenon between the second electrode layer 40 and the first defect repair layer 30.

Preferably, the flexible conductive layer 70 may be conductive paper, so that the flexible conductive layer 70 further has higher tensile strength and tearing strength, and a crack phenomenon that the flexible conductive layer 70 is torn when the thin film capacitor is attached to the surface of the human body and bent is avoided.

In some embodiments of the present application, the flexible conductive layer 70 may also be an Indium Tin Oxide (ITO) film, conductive rubber, or conductive silicone.

In some embodiments of the present application, the thickness of the flexible conductive layer 70 is 0.001mm to 1mm. Preferably, the thickness of the flexible conductive layer 70 is 0.01mm to 0.8mm. More preferably, the thickness of the flexible conductive layer 70 is 0.1mm to 0.6mm. Specifically, the thickness of the flexible conductive layer 70 satisfies the above-mentioned dimensions, and the phenomenon that the flexibility of the flexible conductive layer 70 is reduced due to the excessive thickness of the flexible conductive layer 70 can be avoided, and the phenomenon that the flexible conductive layer 70 is cracked due to the excessive thickness of the flexible conductive layer can be prevented.

It will be appreciated that the flexible conductive layer 70 may also be formed by stacking at least two of conductive paper, conductive rubber, and conductive silicone, for example, the conductive paper and conductive rubber are stacked to form the flexible conductive layer 70, the conductive paper ensures the tensile property of the flexible conductive layer 70, and the conductive rubber ensures the elasticity of the flexible conductive layer 70.

In some embodiments of the present application, with continued reference to fig. 6, fig. 6 shows another schematic structural diagram of a film capacitor according to an embodiment of the present application, where the film capacitor further includes a conductive adhesive layer 80 adhered to the second electrode layer 40, and the conductive adhesive layer 80 has flexibility and adhesiveness, so that the film capacitor is adhered to the skin surface of the human body through the conductive adhesive layer 80, and contact damage caused by mismatch between the film capacitor and soft tissues can be minimized. Illustratively, the conductive attachment layer 80 may be a conductive hydrogel or a conductive silicone gel.

Further, in some embodiments of the present application, for example, in the embodiment in which the dielectric layer 20 is a finished film, since both sides of the finished film of the dielectric layer 20 have surface defects, still referring to fig. 7, fig. 7 shows another schematic structure of the thin film capacitor according to the embodiment of the present application, wherein the thin film capacitor further includes a second defect repair layer 50, and the second defect repair layer 50 is located between the first electrode layer 10 and the dielectric layer 20. Wherein the second defect repair layer 50 has conductivity, the dielectric layer 20 has micro pits on the surface facing the second defect repair layer 50, the second defect repair layer 50 has one surface closely combined with the micro pits on the surface of the dielectric layer 20, and the other surface is in direct or indirect electrical contact with the first electrode layer 10.

Similarly, since the second defect repair layer 50 is disposed on the surface of the dielectric layer 20 facing the first electrode layer 10, the surface defect of the dielectric layer 20 facing the first electrode layer 10 is compensated by the second defect repair layer 50, so that the air gap ionization phenomenon caused by the generation of micro-gaps between the dielectric layer 20 and the first electrode layer 10 can be avoided, which is beneficial to ensuring the safety of the thin film capacitor in the tumor treatment electrode patch.

In some embodiments of the present application, the finished film of the dielectric layer 20 may be used as a substrate, where the first defect repair layer 30 is formed on one surface of the finished film of the dielectric layer 20 by magnetron sputtering, and then the second defect repair layer 50 is formed on the other surface of the finished film of the dielectric layer 20.

In some embodiments of the present application, the finished film of the dielectric layer 20 may be used as a substrate, and then the first defect-repair layer 30 and the second defect-repair layer 50 may be formed (e.g., magnetron sputtering) on both sides of the finished film of the dielectric layer 20.

In some embodiments of the present application, the second defect-repair layer 50 is a metal layer. In some embodiments of the present application, the material of the second defect repair layer 50 may be one or a combination of several of Al, ti, au, ag, zn, cu, pt, cr, fe, sn or Ni, for example, the second defect repair layer 50 includes a layer of magnetron sputtered Al material, a layer of Zn material, and a layer of Ag material in this order, and for example, the second defect repair layer 50 includes a layer of magnetron sputtered Al material or a layer of Au material. In some embodiments of the present application, the second defect-repair layer 50 may be formed by spin coating or spraying a non-metallic conductive material such as graphite, conductive silicon, or the like.

In some embodiments of the present application, referring to fig. 8, fig. 8 shows another schematic structure of a thin film capacitor according to an embodiment of the present application, wherein the second defect repair layer 50 includes multiple metal layers, such as multiple aluminum metal layers or multiple zinc metal layers, and the zinc metal layer away from the dielectric layer 20 can protect the aluminum metal layer adjacent to the dielectric layer, so as to avoid oxidation failure of the aluminum metal layer adjacent to the dielectric layer. As an example, the second defect repair layer 50 includes an overlapped aluminum metal layer and a zinc metal layer; as another example, the second defect-repair layer 50 includes an overlapped aluminum metal layer and a gold (Au) metal layer. As another example, the second defect-repair layer 50 includes an overlapped aluminum metal layer and a titanium (Ti) metal layer.

It will be appreciated that the second defect repair layer 50 may also include a plurality of layers of aluminum metal and zinc metal that are staggered with respect to each other, i.e., with zinc metal between adjacent layers of aluminum metal and aluminum metal between adjacent layers of zinc metal.

In some embodiments of the present application, the second defect repair layer 50 may be formed on the surface of the dielectric layer 20 facing the first electrode layer 10 by means of magnetron sputtering, and during the magnetron sputtering process, target atoms or molecules with small diameters generated by ion bombardment sputtering of a target material (for example, aluminum) may be deposited and enter into micro-sized pits (micro-pits) on the surface of the dielectric layer 20, so that the surface defect of the dielectric layer 20 is compensated by tightly combining the surface of the second defect repair layer 50 with the micro-pits on the surface of the dielectric layer 20. In some embodiments of the present application, the second defect repair layer 50 may also be formed on the surface of the dielectric layer 20 facing the first electrode layer 10 by means of electron beam evaporation, in which the coating material (e.g. zinc) is bombarded by accelerated electrons, and kinetic energy of the electrons is converted into thermal energy to heat and evaporate the coating material, so as to form the second defect repair layer 50 on the surface of the dielectric layer 20.

In some embodiments of the present application, for example, for embodiments in which the second defect repair layer 50 includes the aluminum metal layer 31 and the zinc metal layer 32 overlapped, the second defect repair layer 50 may be prepared by forming an aluminum metal layer on the surface of the dielectric layer 20 by magnetron sputtering and then forming a zinc metal layer on the aluminum metal layer by magnetron sputtering.

In some embodiments of the present application, the second defect-repair layer 50 has a thickness of 10nm to 1000nm. Preferably, the first defect-repair layer 30 has a thickness of 10nm to 800nm. More preferably, the second defect-repair layer 50 has a thickness of 50nm to 450nm. Wherein, the second defect repair layer 50 satisfying the above-mentioned size range may have good flexibility, and may also prevent a crack phenomenon caused by the second defect repair layer 50 being too thick or a phenomenon that the dielectric layer 20 cannot be completely covered due to being too thin.

In some embodiments of the present application, for example, for the second defect repair layer 50 comprising an overlapping aluminum metal layer 31 and zinc metal layer 32, the thickness of the aluminum metal layer 31 is 10nm to 1000nm, and the thickness of the zinc metal layer 32 is 10nm to 1000nm.

In some embodiments of the present application, the first electrode layer 10 is a finished metal sheet, and the tensile index of the first electrode layer 10 is greater than the tensile index of the second defect repair layer 50. The first electrode layer 10 of the present application has a greater tensile index, which is advantageous in ensuring that the tensile index of the first electrode layer 10 is greater than that of the second defect repair layer 50.

In some embodiments of the present application, with continued reference to fig. 8, a side of the dielectric layer 20 facing the first electrode layer 10 has a third roughness, a side of the second defect repair layer 50 facing away from the dielectric layer 20 has a fourth roughness, and the fourth roughness is less than or equal to the third roughness.

Specifically, after the second defect repair layer 50 is formed on the dielectric layer 20, since the second defect repair layer 50 is tightly combined with the micro pits of the dielectric layer 20, the pits with larger sizes corresponding to the third roughness of the dielectric layer 20 are partially compensated, and the level difference caused by the micro pits is reduced, so that the fourth roughness of the surface of the second defect repair layer 50 facing away from the dielectric layer 20 is smaller, and the tip discharge phenomenon between the first electrode layer 10 and the second defect repair layer 50 can be reduced after the first electrode layer 10 is attached to the second defect repair layer 50.

It should be noted that, when measuring the third roughness and the fourth roughness, an Atomic Force Microscope (AFM) or a Scanning Probe Microscope (SPM) may be used to measure the surface roughness of the second defect repair layer 50, then the surface roughness of the dielectric layer 20 is measured after the second defect repair layer 50 is removed, for example, the first defect repair layer 30 is removed by chemical etching, and then the surface roughness of the dielectric layer 20 is measured by the scanning probe microscope; alternatively, the thin film capacitor may be sectioned by a section plane perpendicular to the dielectric layer 20, and a cross-sectional view of the thin film capacitor may be magnified by an electron microscope, and the corresponding roughness may be calculated by a contour line between interfaces (for example, an interface between the dielectric layer 20 and the second defect repair layer 50 or a surface contour line of the second defect repair layer 50, etc.).

In some embodiments of the present application, with continued reference to fig. 8, a surface of the dielectric layer 20 facing the first electrode layer 10 has a plurality of second micro-pits 202, and the second defect repair layer 50 is tightly bonded to inner wall surfaces of the second micro-pits 202 to compensate for surface defects of the dielectric layer 20. The second microscopic bump 501 of the second defect repair layer 50 may be formed during the process of preparing the second defect repair layer 50, for example, when preparing the second defect repair layer 50 by magnetron sputtering, atoms or molecules generated by the magnetron sputtering enter and fill the second microscopic pit 202, thereby generating the second defect repair layer 50 closely combined with the inner wall surface of the second microscopic pit 202, and further eliminating the interlayer micro-gap between the dielectric layer 20 and the second defect repair layer 50.

In some embodiments of the present application, the film capacitor further includes a flexible substrate 60, and the first electrode layer 10 is attached to the flexible substrate 60. Preferably, the flexible substrate 60 is a polyimide film having insulation properties so as to make the film capacitor flexible and bend.

In some embodiments of the present application, referring to fig. 9, fig. 9 shows another schematic structural diagram of a thin film capacitor according to an embodiment of the present application, in which a dielectric layer includes a first insulating layer 21 and a second insulating layer 22 tightly bonded to each other, a surface of the first defect repair layer, facing away from the first insulating layer 21, of the second insulating layer 22 is tightly bonded to a surface of the second insulating layer 22, and an insulation strength of the second insulating layer 22 is greater than an insulation strength of the first insulating layer 21.

In the above embodiment, the second insulating layer 22 is disposed between the first insulating layer 21 and the first defect repair layer 30, and because the first insulating layer 21 and the second insulating layer 22 are tightly combined with each other, the insulating strength of the second insulating layer 22 is greater than that of the first insulating layer 21, on the one hand, the phenomenon of micro-gap between the first insulating layer 21 and the second insulating layer 22 can be avoided, on the other hand, the breakdown preventing performance of the film capacitor dielectric layer 20 can be effectively increased, and the safety of the tumor therapy transducer in the tumor therapy electrode patch can be guaranteed.

Illustratively, the material of the first insulating layer 21 may include one or more of poly (VDF-TrFE-CTFE) (poly (vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene)), poly (VDF-TrFE-CFE) (poly (vinylidene fluoride-trifluoroethylene-1-chlorofluoroethylene)), poly (VDF-TrFECFE-CTFE) (poly (vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene-chlorofluoroethylene)), poly (VDF-DB) (poly (vinylidene fluoride-diethylene glycol butyl ether);

In some embodiments of the present application, the thickness of the first insulating layer 21 is 1um to 100um. In some embodiments of the present application, the thickness of the first insulating layer 21 is 1um to 10um. Preferably, the thickness of the first insulating layer 21 is 2um to 8um. The thickness of the first insulating layer 21 meets the above-mentioned size requirement, so that the tumor therapeutic transducer can have higher capacitance, and meanwhile, the breakdown phenomenon of the tumor therapeutic transducer caused by the over-thin first insulating layer 21 can be avoided.

In some embodiments of the present application, the first insulating layer 21 may be formed on the first electrode layer 10 by spin coating, doctor blading, atomization, casting, or screen printing. In other embodiments of the application, the first insulating layer 21 is directly attached to the first electrode layer 10 by way of a finished film.

The material of the second insulating layer 22 is at least one of nonconductive oxide, nitride, carbide and insulating high molecular polymer, such as: wherein the oxide is selected from at least one of silicon dioxide, zirconium oxide, aluminum oxide, etc., wherein the nitride is selected from one of silicon nitride, boron nitride, aluminum nitride, etc., wherein the carbide is selected from chromium carbide, etc. In addition, when the insulating layer material is an insulating high molecular polymer, it may be selected from at least one of a siloxane polymer, a silazane polymer, polymethyl methacrylate (PMMA), polyimide (PI), polyethylene (PE), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyurethane (PU), fluorinated ethylene propylene copolymer (FEP), fusible Polytetrafluoroethylene (PFA), ethylene-tetrafluoroethylene copolymer (ETFE), polyether ether ketone (PEEK), polysilazane, polycarbonate, silicone, a fluoride material, rubber, and the like.

In some embodiments of the present application, the thickness of the second insulating layer 22 is 1nm to 1000nm. Preferably, the thickness of the second insulating layer 22 is 5nm to 800nm. More preferably, the thickness of the second insulating layer 22 is 10nm to 300nm. The thickness of the second insulating layer 22 satisfies the above dimensional relationship, so that on one hand, the phenomenon that the second insulating layer 22 is too thick to cause the brittleness increase in some cases, and further, the cracking phenomenon is caused when the tumor therapeutic transducer is bent, and on the other hand, the phenomenon that the capacitance of the tumor therapeutic transducer is greatly reduced due to the too thick second insulating layer 22 can be avoided.

In some embodiments of the present application, the second insulating layer 22 may be formed on the first insulating layer 21 by means of magnetron sputtering, in which target atoms or molecules having a small diameter generated by ion bombardment sputtering of a target material (e.g., silicon dioxide) may be deposited and enter into pits having a small size on the surface of the first insulating layer 21, so that the second insulating layer 22 is tightly bonded with the first insulating layer 21. In some embodiments of the present application, the second insulating layer 22 may also be formed on the first insulating layer 21 by electron beam evaporation, in which the coating material (e.g. silicon dioxide) is bombarded with accelerated electrons, and kinetic energy of the electrons is converted into thermal energy to heat and evaporate the coating material, so that the second insulating layer 22 is formed on the surface of the first insulating layer 21.

In some embodiments of the present application, the second insulating layer 22 may be formed on the first insulating layer 21 by spin-coating with an organic solution, for example, a solution containing a polydimethylsiloxane soluble insulating material is formed on the first insulating layer 21 by spin-coating, and the solution may enter into pits with a micro-size on the surface of the first insulating layer 21 due to centrifugal force during spin-coating, and after the solution is cured, the second insulating layer 22 tightly combined with the first insulating layer 21 may be obtained.

It will be appreciated that the second insulating layer 22 may also be formed on the surface of the first insulating layer 21 by physical vapor deposition, for example, arc plasma plating, ion plating, molecular beam epitaxy, etc., so as to fill microscopic pits on the surface of the first insulating layer 21.

Further, in order to better implement the thin film capacitor in the embodiment of the present application, the present application further provides a method for manufacturing a thin film capacitor based on the thin film capacitor, referring to fig. 10, fig. 10 shows a schematic flow chart of the method for manufacturing a thin film capacitor in the embodiment of the present application, where the method for manufacturing a thin film capacitor includes:

step S901, providing a first electrode layer 10;

In some embodiments of the present application, the first electrode layer 10 may refer to a corresponding metal layer on a circuit board, for example, a portion of a copper foil area is exposed on the circuit board, and the dielectric layer 20 is formed (for example, by atomization) in the copper foil area, and a power interface of the circuit board may be electrically connected to a power source. In some embodiments of the present application, for example, for embodiments in which the dielectric layer 20 is a finished film, a second defect-repairing layer 50 may be further disposed between the dielectric layer 20 and the first electrode layer 10 to compensate for defects on a side of the dielectric layer 20 facing the first electrode layer 10.

Step S902, forming a dielectric layer 20 on the first electrode layer 10;

preferably, the material of the dielectric layer 20 may comprise one or more of poly (vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene), poly (vinylidene fluoride-trifluoroethylene-1-chlorotrifluoroethylene), poly (vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) or poly (VDF-DB) (poly (vinylidene fluoride-diethylene glycol butyl ether)), which, due to their relatively high dielectric constant, help to increase the capacitance of the film capacitor at a certain thickness and area of the dielectric layer 20 for better application of the tumor treatment alternating electric field to the patient treatment site.

Step S903, forming a first defect repair layer 30 on a surface of the dielectric layer 20 facing away from the first electrode layer 10; the first defect repair layer has conductivity, one surface of the dielectric layer facing the first defect repair layer is provided with micro pits, one surface of the first defect repair layer is tightly combined with the micro pits on the surface of the dielectric layer, and the other surface of the first defect repair layer is directly or indirectly in electrical contact with the second electrode layer.

In some embodiments of the present application, the first defect-repair layer 30 is a metal layer. In some embodiments of the present application, the material of the first defect-repair layer 30 may be one or a combination of Al, ti, au, ag, zn, cu, pt, cr, fe, sn or Ni. In some embodiments of the present application, the first defect repair layer 30 includes a plurality of sub-metal layers 301, and the first defect repair layer 30 having the plurality of sub-metal layers 301 can prevent such crack phenomenon from being transmitted to each other in each sub-metal layer 301, thereby preventing the first defect repair layer 30 from penetrating crack phenomenon as much as possible. In some embodiments of the present application, the first defect-repair layer 30 includes an overlapping aluminum metal layer 31 and zinc metal layer 32.

In some embodiments of the present application, the first defect-repair layer 30 may be formed on a side of the dielectric layer 20 facing away from the first electrode layer 10 by means of magnetron sputtering. In some embodiments of the present application, the first defect repair layer 30 may also be formed on a side of the dielectric layer 20 facing away from the first electrode layer 10 by electron beam evaporation. In some embodiments of the present application, for example, for the embodiment in which the first defect repair layer 30 includes the aluminum metal layer 31 and the zinc metal layer 32 overlapped, when preparing the first defect repair layer 30, the aluminum metal layer 31 may be formed on the surface of the dielectric layer 20 by magnetron sputtering, and then the zinc metal layer 32 may be formed on the aluminum metal layer 31 by magnetron sputtering.

In step S904, the second electrode layer 40 is formed on the surface of the first defect-repair layer 30 facing away from the dielectric layer 20.

In some embodiments of the present application, the second electrode layer 40 of the film capacitor is closer to the skin surface of the human body, while the first electrode layer 10 of the film capacitor is farther from the skin surface of the human body. In some embodiments of the present application, for example, for the embodiment in which the second electrode layer 40 is closer to the skin surface of the human body, the second electrode layer 40 is preferably a stainless steel metal layer or a titanium metal layer with a thickness of 0.005mm to 0.1mm, so that not only the corrosion phenomenon of the second electrode layer 40 can be prevented, but also sweat can be prevented from being immersed into the dielectric layer 20 inside the film capacitor, and thus the breakdown phenomenon of the dielectric layer 20 of the film capacitor due to sweat of the human body can be avoided.

The thin film capacitor prepared by the thin film capacitor preparation method of the application has the advantages that as the first defect repair layer 30 is arranged on the surface of the dielectric layer 20, which is away from the first electrode layer 10, the surface defect of the surface of the dielectric layer 20, which is away from the first electrode layer 10, can be compensated by using the first defect repair layer 30, so that the air gap ionization phenomenon caused by the generation of a tiny gap between the dielectric layer 20 and the corresponding electrode layer is avoided, and the safety of the thin film capacitor in the tumor treatment electrode patch is ensured.

In some embodiments of the present application, referring to fig. 11, fig. 11 is a schematic flow chart of a method for manufacturing a thin film capacitor according to an embodiment of the present application, where the method for manufacturing a thin film capacitor includes:

step S1001, providing a circuit board having a flexible substrate 60 and a first electrode layer 10;

step S1002, forming a dielectric layer 20 on the first electrode layer 10;

Step S1003, forming a first defect repair layer 30 on a surface of the dielectric layer 20 facing away from the first electrode layer 10; wherein the first defect repair layer 30 is used for compensating the surface defect of the dielectric layer 20 on the surface away from the first electrode layer 10;

step S1004, forming a flexible conductive layer 70 on a surface of the first defect repair layer 30 facing away from the dielectric layer 20;

step S1005, forming a second electrode layer 40 on a surface of the flexible conductive layer 70 facing away from the first defect repair layer 30;

in step S1006, the conductive adhesion layer 80 is formed on the second electrode layer 40.

It should be noted that, the flexible conductive layer 70 has conductivity and a smaller elastic modulus, so that the flexible conductive layer 70 electrically connects the second electrode layer 40 and the first defect repair layer 30, and ensures electrical connectivity between the second electrode layer 40 and the first defect repair layer 30; meanwhile, the conductive adhesive layer 80 has flexibility and adhesiveness so as to be adhered to the skin surface of a human body through the conductive adhesive layer 80, and contact damage caused by mismatch between the film capacitor and the soft tissue can be reduced to the greatest extent. Illustratively, the flexible conductive layer 70 may be one or more of conductive paper, polyimide, or mylar, and the conductive attachment layer 80 may be a conductive hydrogel or a conductive silicone gel.

Further, in order to better implement the film capacitor in the embodiment of the present application, the present application further provides a tumor treatment electrode patch based on the film capacitor, where the tumor treatment electrode patch includes the film capacitor in any one of the above embodiments. The tumor treatment electrode patch in the embodiment of the present application has all the beneficial effects of the thin film capacitor because the thin film capacitor in the embodiment is provided, and the details are not repeated here.

Further, in order to better implement the tumor treatment electrode patch according to the embodiment of the present application, the present application further provides a tumor treatment system based on the tumor treatment electrode patch, where the tumor treatment system includes the tumor treatment electrode patch according to any one of the embodiments described above. The tumor treatment system in the embodiment of the present application has all the beneficial effects of the thin film capacitor because the thin film capacitor in the embodiment is provided, and will not be described herein.

In the foregoing embodiments, the descriptions of the embodiments are focused on, and the portions of one embodiment that are not described in detail in the foregoing embodiments may be referred to in the foregoing detailed description of other embodiments, which are not described herein again.

While the basic concepts have been described above, it will be apparent to those skilled in the art that the foregoing detailed disclosure is by way of example only and is not intended to be limiting. Although not explicitly described herein, various modifications, improvements and adaptations of the application may occur to one skilled in the art. Such modifications, improvements, and modifications are intended to be suggested within the present disclosure, and therefore, such modifications, improvements, and adaptations are intended to be within the spirit and scope of the exemplary embodiments of the present disclosure.

Meanwhile, the present application uses specific words to describe embodiments of the present application. Reference to "one embodiment," "an embodiment," and/or "some embodiments" means that a particular feature, structure, or characteristic is associated with at least one embodiment of the application. Thus, it should be emphasized and should be appreciated that two or more references to "an embodiment" or "one embodiment" or "an alternative embodiment" in various positions in this specification are not necessarily referring to the same embodiment. Furthermore, certain features, structures, or characteristics of one or more embodiments of the application may be combined as suitable.

Similarly, it should be noted that in order to simplify the description of the present disclosure and thereby aid in understanding one or more inventive embodiments, various features are sometimes grouped together in a single embodiment, figure, or description thereof. This method of disclosure does not imply that the subject application requires more features than are set forth in the claims. Indeed, less than all of the features of a single embodiment disclosed above.

In some embodiments, numbers describing the components, number of attributes are used, it being understood that such numbers being used in the description of embodiments are modified in some examples by the modifier "about," approximately, "or" substantially. Unless otherwise indicated, "about," "approximately," or "substantially" indicate that the number allows for a 20% variation. Accordingly, in some embodiments, numerical parameters set forth in the specification and claims are approximations that may vary depending upon the desired properties sought to be obtained by the individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and employ a method for preserving the general number of digits. Although the numerical ranges and parameters set forth herein are approximations in some embodiments for use in determining the breadth of the range, in particular embodiments, the numerical values set forth herein are as precisely as possible.

Each patent, patent application publication, and other material, such as articles, books, specifications, publications, documents, etc., cited herein is hereby incorporated by reference in its entirety except for any application history file that is inconsistent or otherwise conflict with the present disclosure, which places the broadest scope of the claims in this application (whether presently or after it is attached to this application). It is noted that the description, definition, and/or use of the term in the appended claims controls the description, definition, and/or use of the term in this application if there is a discrepancy or conflict between the description, definition, and/or use of the term in the appended claims.

The thin film capacitor for treating human tumor, the preparation method thereof, the tumor treating electrode patch and the tumor treating system provided by the embodiment of the application are described in detail, and specific examples are applied to illustrate the principle and the implementation mode of the application, and the description of the above examples is only used for helping to understand the method and the core idea of the application; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, the present description should not be construed as limiting the present application.

Claims

1. A film capacitor for human tumor treatment, comprising:

a first electrode layer and a second electrode layer;

a dielectric layer, the dielectric layer being located between the first electrode layer and the second electrode layer;

a first defect repairing layer, wherein the first defect repairing layer is located between the second electrode layer and the dielectric layer;

The first defect repairing layer is conductive, one side of the first defect repairing layer is tightly combined with the dielectric layer, and the other side of the first defect repairing layer is directly or indirectly in electrical contact with the second electrode layer.

2 . The thin film capacitor according to claim 1 , wherein the tensile index of the second electrode layer is greater than the tensile index of the first defect repairing layer.

3 . The thin film capacitor according to claim 2 , wherein a thickness of the second electrode layer is greater than a thickness of the first defect repairing layer.

4. The thin film capacitor according to claim 1, wherein a surface of the dielectric layer facing away from the first electrode layer has a first roughness, and a surface of the first defect repairing layer facing away from the dielectric layer has a second roughness;

Wherein, the second roughness is less than or equal to the first roughness.

5 . The thin film capacitor according to claim 1 , wherein the first defect repairing layer is a metal layer.

6 . The thin film capacitor according to claim 1 , wherein the first defect repairing layer comprises a plurality of sub-metal layers.

7. The thin film capacitor according to claim 6, wherein the first defect repairing layer comprises an overlapping aluminum metal layer and a zinc metal layer; or

The first defect repairing layer includes an overlapping aluminum metal layer and a gold metal layer; or

The first defect repairing layer includes an overlapping aluminum metal layer and a titanium metal layer.

8. The thin film capacitor according to claim 1, further comprising a second defect repairing layer, wherein the second defect repairing layer is located between the first electrode layer and the dielectric layer;

The second defect repairing layer is conductive, one side of the second defect repairing layer is tightly bonded to the surface of the dielectric layer, and the other side of the second defect repairing layer is directly or indirectly electrically contacted with the first electrode layer.

9 . The thin film capacitor according to claim 8 , wherein the tensile index of the first electrode layer is greater than the tensile index of the second defect repairing layer.

10. The thin film capacitor according to claim 1, wherein the dielectric layer comprises a first insulating layer and a second insulating layer that are closely bonded to each other;

The first defect repairing layer is tightly bonded to a side of the second insulating layer facing away from the first insulating layer, and the insulating strength of the second insulating layer is greater than the insulating strength of the first insulating layer.

11 . The thin film capacitor according to claim 1 , wherein the thickness of the first defect repairing layer is 10 nm to 1000 nm; and the tolerance value of the first defect repairing layer is ±10% of the thickness value thereof.

12 . The thin film capacitor according to claim 1 , wherein a thickness of the first defect repairing layer is 10 nm to 800 nm.

13 . The thin film capacitor according to claim 1 , wherein a thickness of the first defect repairing layer is 50 nm to 450 nm.

14 . The thin film capacitor according to claim 1 , wherein the thickness of the dielectric layer is 1 um to 100 um; preferably, the thickness of the dielectric layer is 1 um to 10 um; preferably, the thickness of the dielectric layer is 2 um to 8 um.

15. The film capacitor according to claim 6, wherein:

The total thickness of the sub-metal layer in the first defect repairing layer having an electrical conductivity better than or equal to that of metal aluminum is 10 nm to 400 nm;

Preferably, the total thickness of the sub-metal layers in the first defect repairing layer whose electrical conductivity is better than or equal to that of metal aluminum is 50 nm-400 nm.

16. A method for preparing a film capacitor for treating human tumors, comprising:

Providing a first electrode layer;

forming a dielectric layer on the first electrode layer;

forming a first defect repairing layer on a side of the dielectric layer away from the first electrode layer;

forming a second electrode layer on a side of the dielectric layer away from the first defect repairing layer;

The first defect repairing layer is conductive, one side of the first defect repairing layer is tightly bonded to the surface of the dielectric layer, and the other side of the first defect repairing layer is directly or indirectly electrically contacted with the second electrode layer.

17. A tumor treatment electrode patch, characterized by comprising the film capacitor according to any one of claims 1 to 15.

18. A tumor treatment system, characterized by comprising the tumor treatment electrode patch according to claim 17.