CN119001574A - A high consistency and fast de-embedding method in millimeter wave/terahertz frequency band - Google Patents
A high consistency and fast de-embedding method in millimeter wave/terahertz frequency band Download PDFInfo
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- CN119001574A CN119001574A CN202411185153.8A CN202411185153A CN119001574A CN 119001574 A CN119001574 A CN 119001574A CN 202411185153 A CN202411185153 A CN 202411185153A CN 119001574 A CN119001574 A CN 119001574A
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Abstract
本发明公开了一种毫米波/太赫兹频段高一致性快速去嵌方法，属于半导体器件建模与测试校准技术领域，具体为：采用阻抗标准基板对矢量网络分析仪进行校准；利用矢量网络分析仪，测量待测器件和校准器件的S参数；将待测器件和校准器件的S参数转换为对应的S2P数据；构建片外去嵌模块，其包含多种校准算法以及各校准算法所需的校准器件结构类型；将待测器件和校准器件的S2P数据输入至片外去嵌模块，选择各校准算法所需处理的校准器件的S2P数据，经该校准算法处理后，输出待测器件真实值，实现基于不同校准算法的待测器件片外去嵌。本发明仅需一次测试，即可实现多种校准算法的使用，并具有准确性高、一致性好等优点。
The present invention discloses a high consistency fast de-embedding method in the millimeter wave/terahertz frequency band, which belongs to the field of semiconductor device modeling and test calibration technology, specifically: using an impedance standard substrate to calibrate a vector network analyzer; using a vector network analyzer, measuring the S parameters of the device under test and the calibration device; converting the S parameters of the device under test and the calibration device into corresponding S2P data; constructing an off-chip de-embedding module, which includes a variety of calibration algorithms and the calibration device structure type required by each calibration algorithm; inputting the S2P data of the device under test and the calibration device into the off-chip de-embedding module, selecting the S2P data of the calibration device required to be processed by each calibration algorithm, and outputting the true value of the device under test after being processed by the calibration algorithm, so as to realize the off-chip de-embedding of the device under test based on different calibration algorithms. The present invention only needs one test to realize the use of multiple calibration algorithms, and has the advantages of high accuracy and good consistency.
Description
Technical Field
The invention belongs to the technical field of semiconductor device modeling and test calibration, and particularly relates to a millimeter wave/terahertz frequency band high-consistency rapid de-embedding method.
Background
The vector network analyzer is the most widely used test equipment in the current radio frequency engineering field, and firstly, the vector network is calibrated during the test, so that the influence of system errors is removed. However, when measuring a device, the test data is often affected by the redundant structures such as group-signal-group (GSG) PAD, interconnect transmission line, etc., so in order to obtain the real response of the required device, it is necessary to move the test plane from the GSG PAD to the two ends of the device, and accurately peel off the effects such as GSG PAD, interconnect transmission line, etc., that is, the de-embedding process.
There are two conventional methods of de-embedding. A method for calibrating a commercial impedance standard substrate includes such steps as transferring a test plane to probe tip, measuring the device to be tested and the de-embedding device, and processing the measured data (generally using open-short and L-2L (Line-to-Line) de-embedding algorithm). When the working frequency of the device to be tested is high, the method has a problem that the electromagnetic environment of the device to be tested is different from that of the substrate of the device to be tested and the substrate of the device to be de-embedded (typically Si, inP, gaAs, gaN and other substrates) because the commercial impedance standard substrate (typically a quartz substrate) is different from the substrate of the device to be tested, and errors caused by the different substrates cannot be eliminated by only using a de-embedding algorithm, so that measurement errors can be caused.
In order to solve the problems of the first de-embedding method, a second de-embedding method is proposed, and the method comprises the steps of firstly, calibrating by using a commercial impedance standard substrate, and transferring a reference plane to a probe tip; different from the first de-embedding method, the method performs the second calibration again after the first calibration is completed, namely, the device to be tested is calibrated by adopting a vector network built-in calibration algorithm (such as SOLT (Short-Open-Load-Thu), TRL (Thu-Reflect-Line) and the like), and a reference plane is transferred from a probe tip to two ends of the device to be tested, so that the real value of the device to be tested can be directly measured on a chip, and the measurement error caused by different substrates is avoided.
However, the second method still has the following problems: in performing the "second calibration", if different calibration algorithms are required, multiple measurements are required for the same device of the same structure, or measurements are performed for different devices of the same structure. The repeated measurement process is complicated and has high cost, and in the repeated measurement process, the measurement result consistency of the device is poor because the positions of the GSG probe pressure points are different.
Therefore, there is a need to develop a millimeter wave/terahertz frequency band high-consistency rapid de-embedding method to solve the above-mentioned problems.
Disclosure of Invention
Aiming at the problems that the on-chip calibration/de-embedding process of different calibration methods is complicated, the consistency is poor due to multiple tests, and the like, the invention provides the millimeter wave/terahertz frequency band high-consistency rapid de-embedding method, which can realize the use of multiple calibration algorithms only by one test and has the advantages of high accuracy, good consistency, and the like.
The technical scheme adopted by the invention is as follows:
a millimeter wave/terahertz frequency band high-consistency rapid de-embedding method comprises the following steps:
step 1, calibrating a vector network analyzer by adopting an impedance standard substrate, and transferring a reference plane to a probe tip;
Step 2, measuring S parameters of a device to be measured and a calibration device by using a vector network analyzer, wherein the calibration device comprises a basic structure and a combination of any two basic structures, and the basic structure comprises an open-circuit structure, a short-circuit structure, a load structure, a semi-through structure, a through structure and a transmission line structure;
Step 3, S parameters of the device to be tested and the calibration device are converted into S2P files, and corresponding S2P data are obtained;
Step 4, constructing an off-chip de-embedding module which comprises a plurality of calibration algorithms and the structure types of the calibration devices required by the calibration algorithms;
And 5, inputting the S2P data corresponding to the device to be tested and the calibration device into an off-chip de-embedding module, selecting the S2P data corresponding to the calibration device to be processed according to the structure type of the calibration device corresponding to each calibration algorithm, processing the S2P data corresponding to the selected calibration device and the S2P data corresponding to the device to be tested by using the calibration algorithm, and outputting the true value of the device to be tested after off-chip de-embedding by using the calibration algorithm, thereby realizing off-chip de-embedding of the device to be tested based on different calibration algorithms.
Further, the calibration algorithm comprises a calibration algorithm based on an 8-term error model, a 12-term error model and a 16-term error model, and specifically comprises a plurality of SOLT calibration algorithm, TRL calibration algorithm, m-TRL (Thu-Reflect-Line 1-Line2 … …) calibration algorithm, LRRM (Line-Reflect 1-Reflect-Match) calibration algorithm, LRM (Line-Reflect-Match) calibration algorithm, LMR16 (Thu-Match ' - ' Reflect-reflection ' - ' Reflect-Match-reflection ') calibration algorithm and SixteenTerm calibration algorithm.
Further, the calibration device structure types required by the SOLT calibration algorithm include an open circuit structure, a short circuit structure, a load structure and a pass-through structure.
Further, the types of calibration device structures required by the TRL calibration algorithm include a through structure, a transmission line structure, and a short circuit structure, or include a through structure, a transmission line structure, and an open circuit structure.
Further, the m-TRL calibration algorithm includes a NIST-TRL calibration algorithm and a TUG-TRL calibration algorithm, and the required calibration device structure types include a through structure, a transmission line structure, and a short circuit structure, or include a through structure, a transmission line structure, and an open circuit structure.
Further, the types of calibration device structures required by the LRRM calibration algorithm include open-circuit structures, short-circuit structures, load structures, and pass-through structures.
Further, the types of calibration device structures required for the LMR16 calibration algorithm and SixteenTerm calibration algorithm include calibration devices that are constructed using a combination of open circuit structures, short circuit structures, load structures, and pass-through structures.
Further, the device under test and the calibration device are prepared by using a HEMT (high electron mobility transistor) process, and the substrate is Si, inP, gaAs or GaN.
The beneficial effects of the invention are as follows:
Aiming at a device to be tested working in a millimeter wave/terahertz frequency band, the invention provides a millimeter wave/terahertz frequency band high-consistency rapid de-embedding method, which only needs to measure S parameters once for the device to be tested and a calibration device, utilizes an off-chip de-embedding module comprising a plurality of calibration algorithms to realize off-chip de-embedding of the device to be tested based on different calibration algorithms, does not need to measure the same device with the same structure for a plurality of times or measure different devices with the same structure, and effectively avoids the problems of poor consistency (different positions of GSG probe pressure points) caused by the plurality of times of testing of GSG probes, complicated on-chip calibration/de-embedding and the like under the condition of ensuring the same de-embedding precision as the traditional second de-embedding method.
Drawings
Fig. 1 is a flowchart of a millimeter wave/terahertz frequency band high-consistency rapid de-embedding method provided in embodiment 1 of the present invention;
FIG. 2 is a schematic diagram of a calibration device according to embodiment 1 of the present invention;
FIG. 3 is a schematic diagram of a device under test in embodiment 1 of the present invention;
FIG. 4 is a comparison result of the actual capacitance value of the device under test in example 1 and the S parameters after on-chip TRL calibration, off-chip LRRM calibration, off-chip TRL and off-chip NIST-TRL calibration, respectively;
FIG. 5 is a comparison of the actual capacitance value of the device under test in example 1 of the present invention with the Smith chart after on-chip TRL calibration, off-chip LRRM calibration, off-chip TRL and off-chip NIST-TRL calibration, respectively;
The reference numerals are as follows:
201. An open circuit structure; 202. a short circuit structure; 203. a load structure; 204. a semi-straight structure; 205. a through structure; 206. a first transmission line structure; 207. a second transmission line structure; 301. a capacitor structure.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
The embodiment provides a millimeter wave/terahertz frequency band high-consistency rapid de-embedding method, which relates to a device to be tested and a calibration device which are prepared based on a35 nm InP HEMT technology. Specifically, the device under test is a capacitor structure 301 shown in fig. 3, and the calibration device includes an open circuit structure 201, a short circuit structure 202, a load structure 203, a half-through structure 204, a through structure 205, a first transmission line structure 206, and a second transmission line structure 207 as shown in fig. 2; the substrates of the device to be tested and the calibration device are InP substrates with the thickness of 50 mu m; the signal line structures of the device to be tested and the calibration device are grounded coplanar waveguides, the line width of the signal line is 10 mu m, and the distance between the signal line and the ground planes at two sides is also 10 mu m.
Based on the device to be tested and the calibration device, the flow of the millimeter wave/terahertz frequency band high-consistency rapid de-embedding method provided by the embodiment is shown in fig. 1, and specifically comprises the following steps:
Step 1, a commercial impedance standard substrate (particularly a quartz substrate) is adopted to calibrate a vector network analyzer, a reference plane is transferred to a probe tip, and the influence of errors such as a switching item and the like is removed;
Step 2, measuring the S parameters of a device to be measured and a calibration device by using a vector network analyzer, wherein the S parameters of the device to be measured are recorded as S cap, and the S parameters of an open circuit structure 201, a short circuit structure 202, a load structure 203, a half-through structure 204, a through structure 205, a first transmission line structure 206 and a second transmission line structure 207 in the calibration device are respectively recorded as S open、Sshort、Sload、Shalfthru、Sthru、Sline1 and S line2;
Step 3, S parameters of the device to be tested and the calibration device are converted into S2P files, and corresponding S2P data are obtained; the S2P data corresponding to the device to be tested is cap.s2p; the S2P data corresponding to the open structure 201, the short structure 202, the load structure 203, the half-through structure 204, the through structure 205, the first transmission line structure 206 and the second transmission line structure 207 in the calibration device are open.s2p, short.s2p, load.s2p, halfthru.s2p, thru.s2p, line1.s2p and line2.s2p, respectively;
Step 4, constructing an off-chip de-embedding module which comprises a plurality of calibration algorithms and the structure types of the calibration devices required by the calibration algorithms;
Specifically, the calibration algorithm comprises LRRM calibration algorithm, TRL calibration algorithm and NIST-TRL calibration algorithm, which are all based on corresponding algorithm functions embedded in the python library to an off-chip de-embedding module;
The calibration device structure types required by LRRM calibration algorithm include an open circuit structure 201, a short circuit structure 202, a load structure 203 and a pass-through structure 205; the types of calibration device structures required for the TRL calibration algorithm include a pass-through structure 205, a shorting structure 202, and a first transmission line structure 206; the types of calibration device structures required for the NIST-TRL calibration algorithm include a pass-through structure 205, a short-circuit structure 202, a first transmission line structure 206, and a second transmission line structure 207;
And 5, inputting S2P data (including cap.s2p, open.s2p, short.s2p, load.s2p, halfthru.s2p, thru.s2p, line1.s2p and line2.s2p) corresponding to the device to be tested and the calibration device into an off-chip de-embedding module, selecting S2P data corresponding to the calibration device to be processed according to the structure type of the calibration device corresponding to each calibration algorithm by the off-chip de-embedding module, processing S2P data corresponding to the calibration device to be processed by the calibration algorithm and S2P data corresponding to the device to be tested by the calibration algorithm, outputting the capacitance value of the device to be tested after off-chip de-embedding (short for off-chip LRRM calibration) by a TRL calibration algorithm, and the capacitance value of the device to be tested after off-chip de-embedding (short for off-chip NIST-TRL calibration) by the NIST-TRL calibration algorithm, and further realizing different calibration algorithms based on the device to be tested.
In order to verify the off-chip de-embedding precision of the device to be tested based on different calibration algorithms implemented in this embodiment, the method is compared with a conventional second de-embedding method, and specifically, a TRL calibration algorithm built in a vector network analyzer is adopted in the second calibration, so as to obtain the capacitance value of the device to be tested after on-chip de-embedding (abbreviated as on-chip TRL calibration) by the conventional second de-embedding method.
Fig. 4 is a comparison result of the actual capacitance value of the device under test in this embodiment and the S parameter after the on-chip TRL calibration, the off-chip LRRM calibration, the off-chip TRL and the off-chip NIST-TRL calibration, respectively, and fig. 5 is a Smith chart comparison result, it can be seen that the capacitance value of the device under test obtained after the off-chip LRRM calibration, the off-chip TRL and the off-chip NIST-TRL calibration in this embodiment is substantially identical to the de-embedding precision of the capacitance value of the device under test obtained by the on-chip TRL calibration.
In summary, the millimeter wave/terahertz frequency band high-consistency rapid de-embedding method provided by the embodiment only needs to perform one-time S parameter measurement on the device to be tested and the calibration device, and can effectively avoid the problems of poor consistency (different positions of the GSG probe pressure points) and complicated on-chip calibration/de-embedding and the like caused by multiple testing of the GSG probe under the condition of ensuring the same de-embedding precision as that of the traditional on-chip TRL calibration.
The foregoing embodiments are merely illustrative of the principles and advantages of the present invention, and are not intended to limit the invention to the precise arrangements and instrumentalities shown, wherein the scope of the invention is not limited to the specific arrangements and instrumentalities shown, and wherein various other changes and combinations may be made by those skilled in the art without departing from the spirit of the invention, without departing from the scope of the invention.
Claims (8)
1. The millimeter wave/terahertz frequency band high-consistency rapid de-embedding method is characterized by comprising the following steps of:
Step 1, calibrating a vector network analyzer by adopting an impedance standard substrate;
Step 2, measuring S parameters of a device to be measured and a calibration device by using a vector network analyzer, wherein the calibration device comprises a basic structure and a combination of any two basic structures, and the basic structure comprises an open-circuit structure, a short-circuit structure, a load structure, a semi-through structure, a through structure and a transmission line structure;
Step 3, S parameters of the device to be tested and the calibration device are converted into corresponding S2P data;
Step 4, constructing an off-chip de-embedding module which comprises a plurality of calibration algorithms and the structure types of the calibration devices required by the calibration algorithms;
And 5, inputting the S2P data corresponding to the device to be tested and the calibration device to an off-chip de-embedding module, selecting the S2P data corresponding to the calibration device to be processed according to the structure type of the calibration device corresponding to each calibration algorithm, processing the S2P data corresponding to the selected calibration device and the S2P data corresponding to the device to be tested by using the calibration algorithm, and outputting the true value of the device to be tested after off-chip de-embedding by using the calibration algorithm, thereby realizing off-chip de-embedding of the device to be tested based on different calibration algorithms.
2. The millimeter wave/terahertz frequency band high-consistency fast deblocking method according to claim 1, characterized in that the calibration algorithm includes a plurality of kinds of SOLT calibration algorithms, TRL calibration algorithms, m-TRL calibration algorithms, LRRM calibration algorithms, LRM calibration algorithms, LMR16 calibration algorithms, sixteenTerm calibration algorithms.
3. The millimeter wave/terahertz frequency band high-consistency fast de-embedding method according to claim 2, wherein the calibration device structure types required by the SOLT calibration algorithm include an open-circuit structure, a short-circuit structure, a load structure and a pass-through structure.
4. The millimeter wave/terahertz frequency band high-consistency fast de-embedding method according to claim 2, wherein the types of calibration device structures required by the TRL calibration algorithm include a through structure, a transmission line structure, and a short circuit structure, or include a through structure, a transmission line structure, and an open circuit structure.
5. The millimeter wave/terahertz frequency band high-consistency fast de-embedding method according to claim 2, wherein the m-TRL calibration algorithm includes a NIST-TRL calibration algorithm and a TUG-TRL calibration algorithm, and the required calibration device structure types include a through structure, a transmission line structure, and a short circuit structure, or include a through structure, a transmission line structure, and an open circuit structure.
6. The millimeter wave/terahertz frequency band high-consistency fast de-embedding method according to claim 2, wherein the types of calibration device structures required by the LRRM calibration algorithm include an open-circuit structure, a short-circuit structure, a load structure, and a pass-through structure.
7. The method for rapid de-embedding in millimeter wave/terahertz frequency band of claim 2, wherein the types of calibration device structures required by the LMR16 calibration algorithm and SixteenTerm calibration algorithm include calibration devices formed by using a combination of an open circuit structure, a short circuit structure, a load structure, and a pass-through structure.
8. The millimeter wave/terahertz frequency band high-consistency rapid de-embedding method of claim 1, wherein the device to be tested and the calibration device are prepared by utilizing a HEMT process, and the substrate is Si, inP, gaAs or GaN.
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