CN118943013A - A method for improving etching uniformity - Google Patents
A method for improving etching uniformity Download PDFInfo
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- CN118943013A CN118943013A CN202410997386.1A CN202410997386A CN118943013A CN 118943013 A CN118943013 A CN 118943013A CN 202410997386 A CN202410997386 A CN 202410997386A CN 118943013 A CN118943013 A CN 118943013A
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- etching
- gas
- free radicals
- carbon
- etched
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- 238000000034 method Methods 0.000 title claims abstract description 74
- 238000005530 etching Methods 0.000 title claims abstract description 55
- 230000008569 process Effects 0.000 claims abstract description 56
- 239000007789 gas Substances 0.000 claims abstract description 53
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 36
- 150000003254 radicals Chemical class 0.000 claims abstract description 36
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229920002313 fluoropolymer Polymers 0.000 claims abstract description 24
- 229910052786 argon Inorganic materials 0.000 claims abstract description 22
- -1 carbon trifluoride ions Chemical class 0.000 claims abstract description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000011737 fluorine Substances 0.000 claims abstract description 19
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 19
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 18
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000002245 particle Substances 0.000 claims abstract description 6
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 5
- 238000010926 purge Methods 0.000 claims abstract description 5
- 238000007599 discharging Methods 0.000 claims abstract description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 8
- 230000009471 action Effects 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 4
- 239000001569 carbon dioxide Substances 0.000 claims description 4
- 230000009257 reactivity Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical class FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a method for improving etching uniformity, which belongs to the technical field of semiconductor etching and comprises the following steps: s1, introducing carbon tetrafluoride gas into a process chamber of semiconductor etching equipment, and dissociating the carbon tetrafluoride gas into carbon trifluoride ions, carbon trifluoride free radicals and fluorine free radicals in the process chamber; s2, etching the film to be etched in the etching process chamber by the generated carbon trifluoride free radicals and fluorine free radicals to generate target gas and fluorocarbon polymer, and discharging the target gas; and S3, stopping introducing carbon tetrafluoride gas, introducing argon gas to bombard the surface to be etched, removing the fluorocarbon polymer, introducing nitrogen gas to purge particles, and exhausting air. The method for improving the etching uniformity achieves the aim of removing the polymer which is formed in the etching process of the wafer surface and influences the etching process uniformity, thereby improving the etching process uniformity of the wafer surface.
Description
Technical Field
The invention belongs to the technical field of semiconductor etching, and particularly relates to a method for improving etching uniformity.
Background
Dry etching is closely related to the rapid development of the semiconductor industry and the continual advancement of microelectronic fabrication processes. Along with the continuous shrinking of the feature size of the semiconductor device, the requirement on the manufacturing process is higher and higher, the uniformity of the dry etching technology gradually becomes one of the key parameters which cannot be ignored in the semiconductor manufacturing process, in the silicon oxide film etching process, carbon tetrafluoride becomes the main flow etching gas, but a series of polymers are inevitably generated to adhere to the surface of the film, the further etching of the local area is prevented, the uniformity and the yield of the film etching process are seriously affected, and therefore, the polymer on the surface of the film needs to be removed in time.
In the related art, in order to remove fluorocarbon polymers during the etching process, hydrogen or other gases are introduced into a process chamber, etching is performed in the process chamber together with carbon tetrafluoride gas, and fluorine ions in fluorocarbon compounds are extracted by hydrogen radicals to form gaseous compounds, and the gaseous compounds are discharged. The etching and removal effects are limited by the ratio of hydrogen to carbon tetrafluoride and other factors, so that the etching uniformity is relatively poor.
Disclosure of Invention
The invention overcomes the defects of the prior art and provides a method for improving etching uniformity so as to solve the problems in the prior art.
In order to achieve the above purpose, the invention adopts the following technical scheme: a method of improving etch uniformity, comprising the steps of:
S1, introducing carbon tetrafluoride gas into a process chamber of semiconductor etching equipment, and dissociating the carbon tetrafluoride gas into carbon trifluoride ions, carbon trifluoride free radicals and fluorine free radicals in the process chamber;
s2, etching the film to be etched in the etching process chamber by the generated carbon trifluoride free radicals and fluorine free radicals to generate target gas and fluorocarbon polymer, and discharging the target gas;
And S3, stopping introducing carbon tetrafluoride gas, introducing argon gas to bombard the surface to be etched, removing the fluorocarbon polymer, introducing nitrogen gas to purge particles, and exhausting air.
In a preferred embodiment of the present invention, in step S1, the carbon tetrafluoride gas may generate free radicals with strong reactivity under the action of glow discharge.
In a preferred embodiment of the present invention, in step S2, the target gas is carbon dioxide.
In a preferred embodiment of the present invention, in step S3, argon is introduced into the etching process chamber and ionized to form argon ions, and the argon ions bombard the fluorocarbon polymer remained on the surface of the film to be etched under the action of the magnetic field, so that the fluorocarbon polymer is separated from the surface of the film to be etched.
In a preferred embodiment of the invention, after the fluorocarbon polymer is separated from the surface of the film to be etched, nitrogen is used for blowing and exhausting the surface and the cavity of the film to be etched, and the fluorocarbon polymer affecting the etching uniformity is discharged out of the process cavity of the equipment.
The invention solves the defects existing in the background technology, and has the following beneficial effects:
according to the method for improving the etching uniformity, the carbon tetrafluoride gas is introduced into the process cavity, so that the carbon tetrafluoride gas can be ionized into carbon trifluoride ions, carbon trifluoride free radicals and fluorine free radicals required by the etching process under the condition of glow discharge, and then the silicon oxide film is etched by using the characteristic that the carbon trifluoride ions, the carbon trifluoride free radicals and the fluorine free radicals have strong chemical reaction activity, so that the silicon oxide film is etched by the fluorine-containing free radicals, the carbon trifluoride ions, the carbon trifluoride free radicals and the fluorine free radicals are subjected to chemical reaction with the silicon oxide film to generate target gas and fluorocarbon polymer, the target gas is discharged out of the process cavity, argon is introduced into the process cavity to ionize the carbon fluoride polymer to form argon ions, particles are formed under the action of a magnetic field, nitrogen is introduced into the process cavity to be purged, and then the process cavity is discharged, so that the purpose of removing the polymer which influences the uniformity of the etching process in the etching process is achieved, and the uniformity of the wafer surface is improved, and the method has the advantages of simultaneously introducing multiple gases, such that the gas and a series of accurate and complicated factors which influence the uniformity and uniformity are avoided.
Drawings
The invention is further described below with reference to the drawings and examples;
FIG. 1 is a flow chart of a preferred embodiment of the present invention;
FIG. 2 is a schematic diagram of a timeline according to a preferred embodiment of the present invention;
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific examples, which are not intended to be limiting, so that those skilled in the art will better understand the invention and practice it.
The embodiment provides a method for improving etching uniformity, which achieves the aim of removing polymers which are formed in the process of etching the surface of a wafer and influence the uniformity of the etching process, thereby improving the uniformity of the etching process on the surface of the wafer.
As shown in fig. 1, the method for improving etching uniformity in this embodiment includes the following steps:
S1, introducing carbon tetrafluoride gas into a process chamber of semiconductor etching equipment, dissociating the carbon tetrafluoride gas into carbon trifluoride ions, carbon trifluoride free radicals and fluorine free radicals in the process chamber, and dissociating the carbon tetrafluoride gas under the action of glow discharge to generate the carbon trifluoride ions, the carbon trifluoride free radicals and the fluorine free radicals, wherein the carbon trifluoride free radicals and the fluorine free radicals have strong chemical reactivity;
S2, etching the film to be etched in the etching process chamber by the generated carbon trifluoride free radicals and fluorine free radicals to generate target gas and fluorocarbon polymer, and discharging the target gas, wherein the target gas generated in the step is carbon dioxide, and after the carbon dioxide is discharged, the fluorocarbon polymer is treated;
S3, stopping introducing carbon tetrafluoride gas, introducing argon gas to bombard the surface to be etched, removing fluorocarbon polymer, introducing nitrogen gas to purge particles, exhausting air, introducing argon gas into the etching process cavity and ionizing the argon gas to form argon ions, and the argon ions bombard the residual fluorocarbon polymer on the surface of the film to be etched under the action of the magnetic field to separate the residual fluorocarbon polymer from the surface of the film to be etched, and after the fluorocarbon polymer is separated from the surface of the film to be etched, nitrogen is used for blowing and exhausting the surface and the cavity of the film to be etched, so that the fluorocarbon polymer affecting the etching uniformity is discharged out of the process cavity of the equipment.
As shown in fig. 2, a represents carbon tetrafluoride gas introduced into the process chamber at a first flow rate, B represents argon gas introduced into the process chamber at a second flow rate, C represents nitrogen gas introduced into the process chamber, D represents etching gas carbon tetrafluoride introduced into the next etching cycle, and the t axis represents the time axis. The etching method comprises the following steps:
step E1: introducing carbon tetrafluoride gas into the process chamber for a first period of time;
step E2: after introducing carbon tetrafluoride gas for a first time period into the process chamber, stopping introducing the carbon tetrafluoride gas, and introducing argon for a second time period into the process chamber;
Step E3: stopping introducing argon into the process chamber, continuously stopping introducing carbon tetrafluoride gas, and starting introducing nitrogen into the process chamber for a third time period;
Step E4: and stopping introducing argon and nitrogen into the process chamber, and introducing carbon tetrafluoride etching gas for a first time period into the process chamber only to enter the next etching process cycle.
In the method for improving the etching uniformity, in actual operation, carbon tetrafluoride gas is introduced into a process cavity, so that the carbon tetrafluoride gas can be ionized into carbon trifluoride ions, carbon trifluoride free radicals and fluorine free radicals required by an etching process under the condition of glow discharge, and further, the characteristic of strong reactive activity of the carbon trifluoride ions, the carbon trifluoride free radicals and the fluorine free radicals is utilized, so that the silicon oxide film is etched by the fluorine-containing free radicals, the carbon trifluoride ions, the carbon trifluoride free radicals and the fluorine free radicals are subjected to chemical reaction with the silicon oxide film to generate target gas and fluorocarbon polymer, the target gas is discharged out of the process cavity, argon is introduced into the process cavity to ionize the fluorocarbon polymer to form argon ions, particles are formed, nitrogen is introduced into the process cavity to be purged, and the purpose of removing the polymer which is formed in the etching process uniformity of the wafer surface is not required to be influenced by the etching process is achieved.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations and modifications of the present invention will be apparent to those of ordinary skill in the art in light of the foregoing description. It is not necessary here nor is it exhaustive of all embodiments. And obvious variations or modifications thereof are contemplated as falling within the scope of the present invention.
Claims (5)
1. A method for improving etch uniformity, comprising the steps of:
S1, introducing carbon tetrafluoride gas into a process chamber of semiconductor etching equipment, and dissociating the carbon tetrafluoride gas into carbon trifluoride ions, carbon trifluoride free radicals and fluorine free radicals in the process chamber;
s2, etching the film to be etched in the etching process chamber by the generated carbon trifluoride free radicals and fluorine free radicals to generate target gas and fluorocarbon polymer, and discharging the target gas;
And S3, stopping introducing carbon tetrafluoride gas, introducing argon gas to bombard the surface to be etched, removing the fluorocarbon polymer, introducing nitrogen gas to purge particles, and exhausting air.
2. The method of claim 1, wherein in step S1, the carbon tetrafluoride gas generates radicals with strong chemical reactivity under the action of glow discharge.
3. The method of claim 1, wherein in step S2, the target gas is carbon dioxide.
4. The method according to claim 1, wherein in step S3, argon is introduced into the etching process chamber and ionized to form argon ions, and the argon ions bombard the residual fluorocarbon polymer on the surface of the film to be etched under the action of the magnetic field to separate from the surface of the film to be etched.
5. The method of claim 4, wherein after the fluorocarbon polymer is separated from the surface of the film to be etched, the nitrogen is used to purge and pump the surface and the cavity of the film to be etched, and the fluorocarbon polymer affecting the etching uniformity is discharged from the process chamber of the equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410997386.1A CN118943013A (en) | 2024-07-24 | 2024-07-24 | A method for improving etching uniformity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410997386.1A CN118943013A (en) | 2024-07-24 | 2024-07-24 | A method for improving etching uniformity |
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| Publication Number | Publication Date |
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| CN118943013A true CN118943013A (en) | 2024-11-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202410997386.1A Pending CN118943013A (en) | 2024-07-24 | 2024-07-24 | A method for improving etching uniformity |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022693A (en) * | 2006-02-13 | 2007-08-22 | 东京毅力科创株式会社 | Cleaning method for substrate processing chamber, storage medium, and substrate processing chamber |
| CN101197269A (en) * | 2006-12-06 | 2008-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Silicon slice etching method |
| CN103050396A (en) * | 2012-12-31 | 2013-04-17 | 中微半导体设备(上海)有限公司 | Multilayered medium etching method |
-
2024
- 2024-07-24 CN CN202410997386.1A patent/CN118943013A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022693A (en) * | 2006-02-13 | 2007-08-22 | 东京毅力科创株式会社 | Cleaning method for substrate processing chamber, storage medium, and substrate processing chamber |
| CN101197269A (en) * | 2006-12-06 | 2008-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Silicon slice etching method |
| CN103050396A (en) * | 2012-12-31 | 2013-04-17 | 中微半导体设备(上海)有限公司 | Multilayered medium etching method |
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