CN118938394B - A long-distance silicon waveguide release processing method based on SOI - Google Patents
A long-distance silicon waveguide release processing method based on SOI Download PDFInfo
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- CN118938394B CN118938394B CN202410972021.3A CN202410972021A CN118938394B CN 118938394 B CN118938394 B CN 118938394B CN 202410972021 A CN202410972021 A CN 202410972021A CN 118938394 B CN118938394 B CN 118938394B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 59
- 239000010703 silicon Substances 0.000 title claims abstract description 59
- 238000003672 processing method Methods 0.000 title claims abstract description 10
- 238000012545 processing Methods 0.000 claims abstract description 22
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 22
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 5
- 238000002791 soaking Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 7
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00476—Releasing structures removing a sacrificial layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a long-distance silicon waveguide release processing method based on SOI, which is applied to the field of MOEMS sensors, and aims at solving the problems that the existing release processing technology causes processing failure because HF gas corrodes a SiO 2 layer below through grooves on two sides of a silicon waveguide and the silicon waveguide is collapsed without support.
Description
Technical Field
The invention belongs to the field of MOEMS (micro-electro-mechanical system) sensors, and particularly relates to a micro-nano processing technology of an MOEMS sensor chip.
Background
MOEMS sensors have gained increased attention in the sensor research field due to the combination of the advantages of easy integration and high optical measurement accuracy of conventional MEMS (micro electro mechanical systems). Unlike the current mature large-scale integrated circuit processing, the micro-nano processing technology of the MOEMS sensor is more difficult, and a product is generally said to be a set of technology. In particular to a cavity optical force sensor designed based on the optical spring effect principle of an optical resonant cavity, which is used for realizing the measurement of weak force, displacement, mass, acceleration, angular velocity and other physical quantities by guiding laser into the optical resonant cavity and coupling with a micro-mechanical vibrator by using a silicon waveguide.
In order to realize the integration of the on-chip laser source and the process of end polishing of a matched chip, the length of a silicon waveguide which is generally designed is larger, more than about 2000 um. The long-distance silicon waveguide needs to be integrated with the micromechanical oscillator, and to realize the resonance of the micromechanical oscillator designed on the top silicon of the SOI (silicon on insulator) layer, the HF (hydrogen fluoride) gas is usually adopted to etch away the SiO 2 (silicon dioxide) layer below the micromechanical oscillator so as to suspend the micromechanical oscillator (called release processing), the HF gas can be made to etch away the SiO 2 layer below the HF gas through grooves on two sides of the silicon waveguide, and the silicon waveguide is collapsed due to no support, so that the processing is failed.
Disclosure of Invention
In order to solve the technical problems, the invention provides an integrated long-distance silicon waveguide release processing method, which can protect SiO 2 below a silicon waveguide and ensure that the silicon waveguide is not broken completely, thereby greatly improving the success rate of release processing.
The technical scheme adopted by the invention is that the long-distance silicon waveguide release processing method based on SOI comprises the following steps:
A1, etching a plurality of micro-optical-electromechanical system sensing devices integrated with long-distance silicon waveguides on top silicon of an SOI wafer;
a2, cutting the SOI wafer processed in the step A1 to obtain a chip unit comprising a plurality of devices;
A3, measuring the structural size of the chip unit, and processing the photoetching plate according to the measurement data;
a4, cleaning the chip unit, and fully covering photoresist on the top silicon of the cleaned chip unit;
A5, developing the silicon waveguide area on the chip unit by using a photoetching plate, and removing photoresist covered on the silicon waveguide area;
A6, growing an MgF 2 film on the surface of the chip unit treated in the step A5 by using an optical coating machine;
a7, soaking the chip unit processed in the step A6 in an acetone solution to strip the photoresist in the undeveloped area in the step A5 and the MgF 2 film on the photoresist to expose the micro-electro-mechanical system device and the silicon waveguide edge;
A8, removing the SiO 2 layer below the micro-electro-mechanical system structure through the corrosion hole on the micro-electro-mechanical system structure by using HF gas, so that the micro-electro-mechanical system structure is suspended to facilitate resonance.
The invention has the beneficial effects that the invention utilizes the characteristic of strong hydrogen fluoride gas corrosion resistance of magnesium fluoride, adopts a series of micro-nano processing technology to realize the protection of the integrated long-distance silicon waveguide area, greatly improves the processing success rate of the silicon waveguide, and avoids the processing defects of silicon waveguide collapse, deflection, bending and the like which are very easy to occur in the long-distance silicon waveguide release processing. An effective method is provided for the release processing of micro-optical-electromechanical system devices integrated with long-distance silicon waveguides.
Drawings
FIG. 1 is a top view of a chip processing step provided by the present invention;
FIG. 2 is a front view of a chip processing step provided by the present invention;
FIG. 3 is a left side view of a chip processing step provided by the present invention;
fig. 4 is a partial SEM (scanning electron microscope) photograph of a chip successfully released from processing using the processing method provided by the present invention.
Detailed Description
The present invention will be further explained below with reference to the drawings in order to facilitate understanding of technical contents of the present invention to those skilled in the art.
Fig. 1, fig. 2, and fig. 3 are top view, front view, and left view of chip processing steps of the SOI-based integrated long-distance silicon waveguide release processing method according to the present invention, and specific processing steps are shown below, taking a chip containing 3 micro-electro-mechanical system structures as an example (ellipses in the drawing indicate that any multiple micro-electro-mechanical system structures may be included).
S1, selecting an 8-inch SOI wafer, wherein the thickness of the top silicon (Si) is 250nm, the thickness of the silicon dioxide (SiO 2) layer is 3um, and the thickness of the substrate silicon (Si) is 700um. Etching a micro-electro-mechanical system structure and an integrated silicon waveguide structure on SOI top layer silicon (Si) according to a design drawing, cutting into a plurality of chip units containing a plurality of micro-electro-mechanical system structures, and end polishing chip edges (corresponding to the end faces of the silicon waveguides) to ensure that the end faces of the silicon waveguides are complete and smooth. And shooting an SEM image of the chip unit, determining the size of each part, and then manufacturing a photoetching plate according to the requirements of the photoetching process.
In step S1, the micro-electro-mechanical system structure and the integrated silicon waveguide structure are etched on the top silicon (Si) of the SOI according to a design drawing, and in this embodiment, an accelerometer is taken as an example, and the specific etching process includes the following steps:
① Cleaning a 4 inch SOI wafer by a standard RCA process;
② Spin-coating a layer of electron beam photoresist on the surface of the cleaned SOI wafer, wherein the thickness is 400nm, and the model is PMMAA;
③ Performing optical edge bulb removal-edge exposure, and then baking;
④ Exposing with electron beam direct writing system, developing, ultra-pure water cleaning, spin drying, and electron beam direct writing system
The system model number is JEOL JBX-9500FS;
⑤ And etching the whole structure of the accelerometer by using an ICP etching process, wherein the whole structure of the accelerometer comprises etching holes.
And S2, removing the photoresist remained in the polishing of the end face of the chip in the step S1 from the chip bubble acetone solution, and then spin-coating the photoresist on the surface of the top silicon of the whole chip. In order to facilitate the photoresist stripping in the subsequent step, a thick photoresist process is selected, and the photoresist thickness is 5-6um. In the step, the time for soaking the chip in the acetone solution is tens of minutes to several hours, whether the residual photoresist is removed or not needs to be observed at any time, and if the residual photoresist is denatured, NMP solution (N-methylpyrrolidone) is further used for soaking and removing.
And S3, developing the chip by using a photoetching plate to remove photoresist in the silicon waveguide area. The photoresist in the area of 10-15um width of the chip edge is reserved so as to be stripped together with magnesium fluoride on the chip edge, thereby ensuring that the end face of the waveguide is exposed rather than being covered by the magnesium fluoride so as to prevent the influence on subsequent measurement.
And S4, fully covering and growing a magnesium fluoride film on the surface of the chip by using an optical coating machine, wherein the thickness of the film is about 500nm. The magnesium fluoride fills the grooves (250 nm deep) on the two sides of the waveguide and fully covers the waveguide area, so that HF gas in the step S6 can be prevented from entering silicon dioxide below the etched silicon waveguide through the grooves, and the silicon waveguide is protected. Magnesium fluoride has a low refractive index and has negligible effect on the optical transmission of silicon waveguides.
S5, soaking the chip in an acetone solution to strip photoresist and magnesium fluoride above the micro-electro-mechanical system structure area and the chip edge area, so that the micro-electro-mechanical system structure and the end face of the silicon waveguide are exposed. The time for which the chip is immersed in the acetone solution in this step is from several hours to one day.
And S6, removing the SiO 2 layer below the micro-electro-mechanical system structure by using HF gas through etched corrosion holes on the micro-electro-mechanical system structure, so that the micro-electro-mechanical system structure is suspended to facilitate resonance, the lower SiO 2 is not corroded due to the protection of MgF 2 in the silicon waveguide area, the silicon waveguide is supported, and the conditions of collapse, fracture and the like of the silicon waveguide are avoided.
As shown in fig. 4, a partial SEM photograph of a chip actually processed according to the processing method is provided, it can be seen that the end face of the silicon waveguide at the edge of the chip is complete and exposed, after the micro-electro-mechanical system structure in the middle of the chip is completely released, the lower part of the silicon waveguide without MgF 2 protection is hollowed out, and the silicon dioxide under the silicon waveguide in the area with MgF 2 protection is not corroded, so that the processing defects such as collapse and bending of the silicon waveguide are avoided.
Those of ordinary skill in the art will recognize that the embodiments described herein are for the purpose of aiding the reader in understanding the principles of the present invention and should be understood that the scope of the invention is not limited to such specific statements and embodiments. Various modifications and variations of the present invention will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (4)
1. The long-distance silicon waveguide release processing method based on SOI is characterized by comprising the following steps of:
A1, etching a plurality of micro-optical-electromechanical system sensing devices integrated with long-distance silicon waveguides on top silicon of an SOI wafer;
a2, cutting the SOI wafer processed in the step A1 to obtain a chip unit comprising a plurality of devices;
A3, measuring the structural size of the chip unit, and processing the photoetching plate according to the measurement data;
a4, cleaning the chip unit, and fully covering photoresist on the top silicon of the cleaned chip unit;
A5, developing the silicon waveguide area on the chip unit by using a photoetching plate to remove photoresist covered on the silicon waveguide area, and reserving the photoresist of the micro-optical-electrical-mechanical system structural area, wherein the edge of the chip unit needs to reserve the width of 10-15um to keep the photoresist covered;
A6, growing MgF 2 films on the surfaces of the chip units processed in the step A5 by utilizing an optical coating machine, wherein MgF 2 fills grooves on two sides of the waveguide and fully covers the waveguide area;
a7, soaking the chip unit processed in the step A6 in an acetone solution to strip the photoresist in the undeveloped area in the step A5 and the MgF 2 film on the photoresist to expose the micro-electro-mechanical system device and the silicon waveguide edge;
A8, removing the SiO 2 layer below the micro-electro-mechanical system structure through the corrosion hole on the micro-electro-mechanical system structure by using HF gas, so that the micro-electro-mechanical system structure is suspended to facilitate resonance.
2. The SOI-based long-range silicon waveguide release processing method of claim 1 wherein step A2 further comprises edge polishing the diced chip units.
3. The method of fabricating a long-distance silicon waveguide release based on SOI according to claim 2, wherein the photoresist thickness in step A4 is 5-6um.
4. The method for fabricating a long-distance silicon waveguide release based on SOI according to claim 3, wherein the MgF 2 film thickness on the surface of the waveguide is 500nm.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101290361A (en) * | 2008-06-04 | 2008-10-22 | 中国科学院长春光学精密机械与物理研究所 | The Method of Fabricating Multi-level Micro-mirror by Alternate Etching of Double Films |
| CN108279320A (en) * | 2018-02-09 | 2018-07-13 | 中北大学 | One kind is based on Fano resonance nano optical wave guide accelerometer preparation methods |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4232010B2 (en) * | 2002-04-11 | 2009-03-04 | 日本電気株式会社 | Microstructure formation method |
| CN109437091A (en) * | 2018-10-23 | 2019-03-08 | 中山大学 | A method of preparing micro-nano structure in elastic substrate |
| CN117666018A (en) * | 2023-12-04 | 2024-03-08 | 武汉华中旷腾光学科技有限公司 | On-chip prism waveguide coupler for ultra-high Q crystal resonant cavity and manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101290361A (en) * | 2008-06-04 | 2008-10-22 | 中国科学院长春光学精密机械与物理研究所 | The Method of Fabricating Multi-level Micro-mirror by Alternate Etching of Double Films |
| CN108279320A (en) * | 2018-02-09 | 2018-07-13 | 中北大学 | One kind is based on Fano resonance nano optical wave guide accelerometer preparation methods |
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